JP2009186444A - Method and system for evaluating electromagnetic resistance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an evaluating method of electromagnetic resistance for identifying which noise, conduction noise or radiation noise may more significantly affect malfunctions, based on the discharge noise of semiconductor device. <P>SOLUTION: This electromagnetic resistance evaluating method is the one for the semiconductor device (31) mounted on a wiring board (30). In this method, the semiconductor device (31) is operated to apply first discharge noise from outside the device (31); output information on the first malfunction of the device (31) caused by the first discharge noise; cover the device (31) with a conductive shield (40); apply second discharge noise on the wiring board (30), including the conductive shield (40); and then output information on the second malfunction of the device (31), covered with the conductive shield (40) based on the second discharge noise, thereby evaluating the electromagnetic resistance of the semiconductor device (31) which is mounted on the wiring board (30). <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an electromagnetic resistance evaluation method and apparatus.

  A semiconductor device used for an amusement device (pachinko) is often placed in a poor environment for a semiconductor device having a large amount of electromagnetic noise or the like. In addition to game machines, malfunctions of electronic devices caused by static noise, electromagnetic field noise, and the like have become a problem. Under such circumstances, an evaluation method for electromagnetic noise has been considered.

  Patent Document 1 proposes an electromagnetic environment evaluation method and a system device that can measure and evaluate various radio wave communication characteristics for various indoor environments. FIG. 1 is a partially longitudinal side view showing a schematic configuration of an electromagnetic environment evaluation system apparatus of Patent Document 1. As shown in FIG. Referring to FIG. 1, the electromagnetic environment evaluation system apparatus includes a replaceable wall material 6, a replaceable ceiling material 7, and a replaceable floor material 8, which are respectively equivalent in material to building materials applied when configuring a real indoor space. In addition, an ideal indoor space structure 1 is provided in which a radio wave absorber 9 that blocks electromagnetic continuity with the outside world is set in the entire area of the outer peripheral surface. Various radio wave communication characteristics are measured by transmitting and receiving radio waves between any two points of the ideal indoor space construct 1 (transmitter 2, transmitting antenna 3, receiver 4, and receiving antenna 5). Based on the measurement results, the electromagnetic environment of the ideal indoor space determined by the combination of the materials of the replaceable wall material 6, the replaceable ceiling material 7, and the replaceable floor material 8, and the types, materials, and locations of various structures The electromagnetic environment of the ideal indoor space that can be determined can be accurately evaluated.

Patent Document 2 discloses a technique related to an electrostatic breakdown test. FIG. 2 is a schematic configuration diagram of the electrostatic breakdown test of Patent Document 2. Referring to FIG. 2, this electrostatic breakdown test apparatus places a magnetic tape 11 to be tested on an insulating table 10 with a signal recording surface facing upward, and an MR head 12 such as an AMR head or a GMR head. Is pressed at a predetermined pressure. Static electricity 14 is generated from an ESD gun (ESD simulator) 13 at a position spaced a predetermined distance from the pressing position of the head, and discharged to the magnetic tape 11. The ESD current I _ESD flowing from the MR head 12 at this time is measured by the high-speed oscilloscope 16 via the probe 15.

JP 11-23003 A JP 2004-253088 A

  A semiconductor device for a game machine (pachinko) or the like may cause a malfunction due to a large electromagnetic noise from an external environment to be used, and countermeasures are required. In order to pursue the cause of malfunction, it is necessary to determine whether these electromagnetic noises are caused by conduction noise or radiation noise. Although the techniques of Patent Documents 1 and 2 are disclosed, there is no known technique or apparatus for identifying the cause of electromagnetic noise causing malfunction.

  Hereinafter, means for solving the problems will be described using the reference numerals used in the best mode for carrying out the invention (example) in parentheses. This reference numeral is added to clarify the correspondence between the description of the claims and the description of the best mode for carrying out the invention / example, and is described in the claims. It should not be used to interpret the technical scope of the invention.

  The electromagnetic resistance evaluation method according to the present invention is an electromagnetic resistance evaluation method for a semiconductor device (31) mounted on a wiring board (30). The semiconductor device (31) is operated and the semiconductor device (31) is operated from outside the semiconductor device (31). 1 discharge noise is applied, information on the first malfunction of the semiconductor device (31) based on the first discharge noise is output, the semiconductor device (31) is covered with the conductive shield (40), and the conductive shield (40 The second discharge noise is applied to the wiring board (30) including the semiconductor device (31), and the second malfunction information of the semiconductor device (31) covered with the conductive shield (40) based on the second discharge noise is output. The electromagnetic resistance of the semiconductor device (31) mounted on the substrate (30) is evaluated. Such an electromagnetic resistance evaluation method can perform electromagnetic resistance evaluation while the conductive shield (40) blocks radiation noise among discharge noises that cause malfunction in the semiconductor device (31).

  The electromagnetic immunity evaluation method of the present invention can evaluate whether a malfunction based on discharge noise of a semiconductor device has a larger effect of conduction noise or radiation noise, and can be used to identify the cause of malfunction. It becomes.

  Hereinafter, an electromagnetic resistance evaluation method according to an embodiment of the present invention will be described with reference to the accompanying drawings.

  An embodiment of the electromagnetic resistance evaluation method of the present invention will be described. FIG. 3 is a perspective view showing a configuration example of an electromagnetic resistance evaluation apparatus 100 that implements the electromagnetic resistance evaluation method of the present invention. Referring to FIG. 3, the electromagnetic resistance evaluation apparatus 100 according to the embodiment of the present invention includes a discharge unit 20, a wiring substrate 30, a conductive shield 40, a reference potential supply unit 50, a column 60, and a lead wire 70. It comprises.

  The discharge unit 20 includes an ESD gun or the like, and has a discharge voltage adjustment function, a discharge frequency setting function, and a display function. The discharge part 20 applies the discharge noise of the discharge voltage based on setting to the wiring board 30 by the set application frequency. The wiring board 30 is applied with discharge noise of an arbitrary discharge voltage from the discharge unit 20. The conductive shield 40 is made of a material having a high dielectric constant and high magnetic permeability such as copper, aluminum, and iron, and can block radiation noise propagating in the air. The reference potential supply unit 50 is provided to stabilize the potential of the wiring board 30. The support 60 supports the wiring board 30 and the reference potential supply unit 50 so as not to contact each other. The lead wire 70 connects the conductive shield 40 and the reference potential supply unit 50 in order to stabilize the potential of the conductive shield 40 after being applied by the discharge unit 20.

  The wiring substrate 30 includes a semiconductor device 31, an application unit 32, a power supply unit 33, a wiring substrate GND unit 34, an oscillator unit 35, a reset unit 36, and a result output unit 37. The wiring board 30 may be either a wiring board to be mounted or a wiring board dedicated to evaluation in which only the semiconductor device 31 is changed when performing the electromagnetic resistance evaluation of the present invention.

  The semiconductor device 31 is a target for performing the electromagnetic resistance evaluation of the present invention. The semiconductor device 31 includes a program and a storage unit that stores the program. The semiconductor device 31 executes a program based on the clock signal supplied from the oscillator unit 35 and the reset signal supplied from the reset unit 36 in order to confirm that a normal processing operation is being executed, and the program result is obtained. This is provided to the result output unit 37. The application unit 32 is a place where the discharge unit 20 applies discharge noise. The application unit 32 can be provided at any location on the wiring board 30. The power supply unit 33 is a terminal that acquires power and supplies power to the wiring board 30. The wiring board GND part 34 is a ground terminal for the power supply of the wiring board 30. The oscillator 106 supplies a clock signal to the semiconductor device 31 when power is supplied to the wiring board 30. The oscillator 106 is disposed on the back surface of the wiring board so as not to be affected by the discharge noise from the discharge unit 20. The reset unit 36 provides a reset signal to the semiconductor device 31. When the reset signal is provided from the reset unit 36, execution of the program included in the semiconductor device 31 starts. The result output unit 37 outputs the execution result of the program executed by the semiconductor device 31. The execution result includes information on a normal operation indicating that the semiconductor device 31 is normally performing a processing operation and information on a malfunction indicating a malfunction. As the result output unit 37, an output unit such as an LED that can be recognized by the user is exemplified. For example, assuming that the result output unit 37 is an LED, a program included in the semiconductor device 31 is programmed such that the LED blinks as normal operation information and the LED is turned off or turned on as malfunction information. Is done. The user can recognize whether the semiconductor device 31 is operating normally or malfunctioning according to the execution result output by the result output unit 37.

  The conductive shield 40 blocks radiation noise propagating in the air with respect to the semiconductor device 31 when the discharge unit 20 applies discharge noise to the application unit 32. The conductive shield 40 can cover the semiconductor device 31 to make it difficult for radiation noise to reach the semiconductor device 31. The conductive shield 40 may have any size and shape as long as it can cover the semiconductor device 31 without protruding from the wiring substrate 30. The conductive shield 40 can be switched between covering and not covering the semiconductor device 31. The switching is performed by a user installing manually. When the conductive shield 40 covers the semiconductor device 31, the radiation noise is blocked, and when the conductive shield 40 does not cover the semiconductor device 31, the conductive shield 40 is exposed to the radiation noise. That is, the electromagnetic resistance evaluation apparatus 100 of the present invention measures two cases, when the semiconductor device 31 is covered with the conductive shield 40 and when it is not covered, so that the semiconductor device 31 malfunctions due to discharge noise. The malfunction makes it possible to determine whether the influence of radiation noise is strong or the influence of conduction noise conducted through the wiring board 30 is strong.

  FIG. 4 is a partial cross-sectional view of the electromagnetic resistance evaluation apparatus 100 of the present invention when the conductive shield 40 does not cover the semiconductor device 31. FIG. 5 is a partial cross-sectional view of the electromagnetic resistance evaluation apparatus 100 of the present invention when the conductive shield 40 covers the semiconductor device 31. With reference to FIG.4 and FIG.5, the method to determine whether the malfunction of the semiconductor device 31 in the electromagnetic tolerance evaluation apparatus 100 of this invention is based on the influence of conduction noise or radiation noise is demonstrated. Referring to FIG. 4, the semiconductor device 31 and the application unit 32 are connected via a wiring 38. When discharge noise is applied from the discharge unit 20 to the application unit 32, the conduction noise A is conducted through the wiring 38 and reaches the package unit 31 a of the semiconductor device 31. Further, the conduction noise A enters the internal wiring 31 b of the semiconductor device 31. Further, the radiation noise B propagates in the air, reaches the package part 31a of the semiconductor device 31, and enters the internal wiring 31b. The semiconductor device 31 may cause malfunction due to these intruding discharge noises.

  Referring to FIG. 5, the conduction noise A reaches the semiconductor device 31 through the wiring 38 as in FIG. 4. However, in FIG. 5, since the conductive shield 40 covers the semiconductor device 31, the radiated noise B is blocked and does not easily reach the semiconductor device 31. That is, it is possible to perform an electromagnetic resistance evaluation in a state not affected by radiation noise. Further, the conductive shield 40 includes a non-contact portion 41. The non-contact portion 41 is configured so that the conductive shield 40 and the wiring 38 do not contact each other. In the non-contact portion 41, for example, a method in which a non-conductive coating material is applied to the grounding surface of the conductive shield 40 with the wiring substrate 30, or a contact surface of the conductive shield 40 with the wiring substrate 30 is notched. Further, a method of configuring the wiring 38 so as not to contact the wiring 38 is possible.

  6 is a cross-sectional view in which a lead wire 70 is added to the partial cross-sectional view of the electromagnetic resistance evaluation apparatus 100 of the present invention shown in FIG. The electromagnetic resistance evaluation apparatus 100 of the present invention can also connect the conductive shield 40 and the reference potential supply unit 50 with a lead wire. Referring to FIG. 6, the lead wire 70 connects the conductive shield 40 and the reference potential supply unit 50. By connecting the conductive shield 40 and the reference potential supply unit 50 with the lead wire 70, the conductive shield 40 is stabilized in terms of potential, so that more accurate electromagnetic resistance evaluation can be performed.

  FIG. 7 is a diagram showing the relationship between the wavelength λ (m) on which radiation noise is likely to be placed and the length (m) of the wiring 38. When the wiring length is proportional to λ / 2, radiation noise is likely to ride on the wiring 38.

  FIG. 8 is a flowchart showing the processing operation according to the embodiment of the electromagnetic resistance evaluation method of the present invention. With reference to FIG. 8, the processing operation according to the embodiment of the present invention will be described.

  In a state where the semiconductor device 31 is not covered with the conductive shield 40, the power supply unit 33 of the wiring board 30 is supplied with power from the outside. The oscillator 35 supplies a clock signal to the semiconductor device 31 when power is supplied. When the reset unit 36 is operated while the clock signal is supplied, the semiconductor device 31 executes a program included therein. The result output unit 37 outputs the execution result of the program included in the semiconductor device 31. In this description, it is assumed that the result output unit 37 is an LED. The execution result includes information on normal operation indicating that the processing operation is normally performed (LED blinking) and information on malfunction indicating malfunction (LED lighting and LED extinguishing). The user confirms the blinking of the LED and determines that the semiconductor device 31 is operating normally (step S01).

  The discharge unit 20 applies arbitrary discharge noise to the application unit 32 of the wiring board 30 by a user operation. The result output unit 37 outputs the execution result of the semiconductor device 31 after any discharge noise is applied. Here, when the user confirms the information of the malfunction that the LED is turned on or off, the user confirms the discharge voltage of the discharge noise that caused the malfunction. Based on the confirmed discharge voltage, the noise tolerance 1 of the semiconductor device 31 is acquired (step S02). The noise tolerance 1 indicates the noise tolerance when the semiconductor device 31 is not covered by the conductive shield 40.

  Here, a method for calculating the noise tolerance will be described. FIG. 9 is a flowchart showing a method for calculating the noise tolerance. Step S10 in FIG. 9 is the same as step S01 in FIG. The semiconductor device 31 to be evaluated executes an internal program. The result output unit 37 outputs the execution result of the program of the semiconductor device 31. The user confirms the blinking of the LED of the result output unit 37 and determines normal operation of the semiconductor device 31 (step S10).

  The discharge unit 20 is set with a discharge voltage v (kV) of discharge noise applied by a user input and a maximum application count N (step S11). The discharge unit 20 applies the set discharge voltage v (kV) from the discharge unit 20 to the application unit 32 of the wiring board 30 (step S12).

  The result output unit 37 of the wiring board 30 outputs the execution result of the semiconductor device 31 after the discharge noise of the discharge voltage v (kV) is applied. The user determines whether the execution result is normal operation information (LED blinking) or malfunction information (LED lighting or extinguishing) (step S13).

  When the output information of the result output unit 37 is malfunction information (LED is turned on or off), the user subtracts 1 (kV) from the discharge voltage v (kV) of the discharge noise causing malfunction based on the malfunction information. The determined value is determined as the noise tolerance (step S14).

  When the output information of the result output unit 37 is normal operation information (LED blinking), the user inputs a command for causing the discharge unit 20 to apply discharge noise of the same discharge voltage again. When the discharge unit 20 obtains a command for applying discharge noise of the same discharge voltage, the discharge unit 20 determines whether or not the number n of application times of the discharge voltage v (kV) has reached the maximum number N (step S15). A method may be used in which the output information of the result output unit 37 is acquired while the discharge unit 20 is giving a certain number of discharge noises.

  The discharge unit 20 adds 1 to the number of times of application when the number n of times of application of the discharge noise of the discharge voltage v (kV) has not reached the maximum number N of times of application (step S16).

  The discharge unit 20 does not perform application when the number n of application times of discharge noise of the discharge voltage v (kV) reaches the maximum number N of application times. The user determines whether or not to increase the discharge voltage v (kV) (step S17).

  When it is determined that the user increases the discharge voltage v (kV), 1 (kV) is added to the discharge voltage v (kV) (step S18).

  When it is determined that the user does not increase the discharge voltage v (kV), the discharge voltage v (kV) is determined as noise immunity (step S19). The noise tolerance calculation method has been described above, but the unit for increasing the discharge voltage v (kV) of the discharge noise is not limited to 1 (kV).

  Referring to FIG. 8, the user then covers semiconductor device 31 using conductive shield 40. The semiconductor device 31 covered with the conductive shield 40 is supplied with a clock signal from the oscillator unit 35 when power is supplied as in step S01. The program included in the semiconductor device 31 is executed by the operation of the reset unit 36, and the result output unit 37 outputs the execution result of the program to the discharge acceptance control unit 32. The user confirms that the information provided from the result output unit 37 is normal operation information (LED blinking) (step S03).

  Similar to the flowchart of step S02 and FIG. 9, the noise tolerance 2 is acquired. The noise tolerance 2 is the noise tolerance of the semiconductor device 31 covered with the conductive shield 40 (step S04).

  The user compares the noise tolerance 1 and the noise tolerance 2 (step S05). When the noise immunity 1 and the noise immunity 2 are equal, the effect of blocking the radiation noise by the conductive shield 40 is small, and the cause of the malfunction is specified as the conduction noise (step S06). When the noise tolerance 2 is larger than the noise tolerance 1, it can be seen that the radiation shield effect of the conductive shield 40 is great, and the cause of the malfunction is specified as the radiation noise (step S07). When the noise tolerance 1 is larger than the noise tolerance 2, the relationship between the influence of the conduction noise and the radiation noise is not clear (step S08). Other causes such as the operating state, the discharging state, and the charging state of the conductive shield 40 of the semiconductor device 31 are examined (step S09).

  In the electromagnetic resistance evaluation method and the electromagnetic resistance evaluation apparatus 100 according to the present invention, when the semiconductor device 31 to be evaluated malfunctions due to discharge noise, the cause of malfunction propagates through the air and conduction noise conducted through the wiring board 30. It is possible to evaluate which of the influence of radiation noise is greater. This is because the influence of the radiation noise can be eliminated by blocking the semiconductor device 31 from the radiation noise by the conductive shield 40. By specifying the cause of the malfunction as described above, it becomes clear which of the wiring board 30 and the semiconductor device 31 should be dealt with, and the development of the semiconductor device can be performed more efficiently and economically. .

  In the embodiment of the present invention, a semiconductor integrated circuit or the like is given as a specific example of the semiconductor device 31. Moreover, although the semiconductor device 31 has shown the example which has a program, the semiconductor device 31 does not contain a program and may be implement | achieved by hardware. In that case, the hardware operation is executed by the reset signal of the reset unit 36, and the execution result is output to the result output unit 37. The configuration example of the result output unit 37 can be exemplified by the LED described above. The printed circuit board 30 is exemplified as a specific example of the wiring board 30, but any wiring board 30 may be used as long as it can mount components and wirings for operating the semiconductor device. Examples of the application unit 32 include, but are not limited to, a conductive metal member.

FIG. 1 is a partially longitudinal side view showing a schematic configuration of an electromagnetic environment evaluation system apparatus of Patent Document 1. As shown in FIG. FIG. 2 is a schematic configuration diagram of the electrostatic breakdown test of Patent Document 2. FIG. 3 is a perspective view showing a configuration example of the electromagnetic resistance evaluation apparatus 100 of the present invention. FIG. 4 is a partial cross-sectional view of the electromagnetic resistance evaluation apparatus 100 of the present invention when the conductive shield 40 does not cover the semiconductor device 31. FIG. 5 is a partial cross-sectional view of the electromagnetic resistance evaluation apparatus 100 of the present invention when the conductive shield 40 covers the semiconductor device 31. 6 is a cross-sectional view in which a lead wire 70 is added to the partial cross-sectional view of the electromagnetic resistance evaluation apparatus 100 of the present invention shown in FIG. FIG. 7 is a diagram showing the relationship between the wavelength λ (m) on which radiation noise is likely to be placed and the length (m) of the wiring 38. FIG. 8 is a flowchart showing the processing operation according to the embodiment of the electromagnetic resistance evaluation method of the present invention. FIG. 9 is a flowchart showing a method for obtaining the noise immunity of the electromagnetic immunity evaluation method of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Ideal indoor space structure body 2 Transmitter 3 Transmitting antenna 4 Receiver 5 Receiving antenna 6 Replaceable wall material 7 Replaceable ceiling material 8 Replaceable flooring material 9 Wave absorber 10 Insulating table 11 Magnetic tape 12 MR head 13 ESD gun 14 Static electricity 15 Probe 16 High-speed oscilloscope 20 Discharge part 30 Wiring board 31 Semiconductor device 31a Package part 31b Internal wiring 32 Application part 33 Power supply part 34 Wiring board GND part 35 Oscillator part 36 Reset part 37 Result output part 38 Wiring 40 Conductive shield 41 Non Contact portion 50 Reference potential supply portion 60 Post 70 Lead wire

Claims (9)

An electromagnetic resistance evaluation method for a semiconductor device mounted on a wiring board,
Operating the semiconductor device;
Applying a first discharge noise from outside the semiconductor device;
Outputting information on a first malfunction of the semiconductor device based on the first discharge noise;
Covering the semiconductor device using a conductive shield,
Applying a second discharge noise to the wiring board including the conductive shield;
Outputting information on a second malfunction of the semiconductor device covered with the conductive shield based on the second discharge noise;
An electromagnetic resistance evaluation method for evaluating electromagnetic resistance of a semiconductor device mounted on a wiring board. The electromagnetic resistance evaluation method according to claim 1,
Obtaining a first noise tolerance of the semiconductor device based on the information on the first malfunction and the discharge voltage of the first discharge noise;
An electromagnetic resistance evaluation method for obtaining a second noise tolerance of the semiconductor device covered with the conductive shield based on the second malfunction information and a discharge voltage of the second discharge noise. The electromagnetic resistance evaluation method according to claim 2,
Furthermore, the electromagnetic noise evaluation method of comparing the first noise tolerance and the second noise tolerance. The electromagnetic resistance evaluation method according to any one of claims 1 to 3,
The semiconductor device has a program,
The wiring board includes a result output unit that outputs an execution result of the program, and an application unit connected to the semiconductor device via a wiring,
The operation of the semiconductor device is performed by executing the program,
The first discharge noise is applied to the application unit,
The result output unit outputs information on the first malfunction,
The second discharge noise is applied to the application unit,
The electromagnetic resistance evaluation method in which the result output unit outputs information on the second malfunction. An electromagnetic resistance evaluation method according to any one of claims 1 to 4,
Covering the semiconductor device using the conductive shield,
An electromagnetic resistance evaluation method comprising: connecting the conductive shield to a reference potential supply unit outside the wiring board via a lead wire. A wiring board having a semiconductor device and a result output unit for outputting an operation result of the semiconductor device;
A discharge unit for applying discharge noise from the outside of the semiconductor device;
The wiring board is
A conductive shield that covers the semiconductor device and blocks radiation noise based on the application of the discharge noise; the conductive shield covers the semiconductor device to block the radiation noise; and the radiation noise without covering the semiconductor device Exposure of the semiconductor device can be switched, and the output unit of the result is information on a first malfunction of the semiconductor device based on first discharge noise when the conductive shield does not cover the semiconductor device, and the conductive shield An electromagnetic resistance evaluation apparatus that outputs information on a second malfunction of the semiconductor device based on second discharge noise when covering the semiconductor device. The electromagnetic resistance evaluation apparatus according to claim 6,
The wiring board is
An electromagnetic resistance evaluation apparatus comprising: an application unit that is connected to the semiconductor device via a wiring and to which the discharge noise is applied. The electromagnetic resistance evaluation apparatus according to claim 6 or 7,
A reference potential supply unit outside the wiring board;
A lead wire connecting the conductive shield and the reference potential supply unit;
An electromagnetic resistance evaluation apparatus. The electromagnetic resistance evaluation apparatus according to any one of claims 6 to 8,
The semiconductor device has a program,
The result output unit outputs an execution result of the program.

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