JP2009178906A - Manufacturing method of inkjet recording head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an inkjet recording head which enables a stable pattern formation without suffering from the influence of reflection caused by a base coat even when forming an ink ejection port by an i-ray exposure, not leaving behind an antireflection film. <P>SOLUTION: The method for manufacturing the inkjet recording head which has a substrate having two or more ink ejection energy generating elements, an ink channel for holding droplets on the ink ejection energy generating elements, and the ink ejection port for ejecting the ink formed by an i-ray exposure includes a process for forming the antireflection film, and a process for eliminating the antireflection film by the method enabling the selective elimination after forming the inkjet port by the i-ray exposure. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a manufacturing method for manufacturing an ink jet recording head with high accuracy.

  An ink jet recording head records characters, symbols, figures, etc. by ejecting ink onto a recording medium such as paper or a resin sheet using the function of an energy generating element.

  When a heating resistance element is used as the energy generating element, the liquid subjected to the action of thermal energy is heated to generate bubbles, and droplets are discharged from the ink discharge port at the tip of the substrate portion by the action force based on the bubble generation. The Information is recorded by the droplets adhering to the recording member.

  Such an ink jet recording head has an ink discharge portion provided for discharging a liquid, an ink flow path, a heat generating resistive element as a heat conversion body that is a means for generating thermal energy, and protects the heat generating resistive element from ink. An upper protective layer and a lower layer for storing heat.

  As a conventional method for producing the ink jet recording head, there is a production method described in Patent Document 1. Specifically, a step of forming an ink flow path pattern with a dissolvable resin, a step of applying a coating resin containing a solid epoxy resin at room temperature, a step of forming an ink discharge port, and the dissolution It is a manufacturing method which has the process of eluting possible resin. In the ink jet recording head manufactured by the above manufacturing method, the distance (OH) between the heating resistor element and the ink discharge port can be set with high accuracy, short and with good reproducibility, thereby enabling high quality recording.

  In addition, there is a manufacturing method in which a substrate having a heating resistance element in which an insulating layer film and a Ta film as a cavitation-resistant layer are laminated and a coating resin that is an ink discharge member are bonded via an adhesion layer made of a polyetheramide resin. (Patent Document 2). The adhesion between the Ta film and the coating resin is improved by the presence of the adhesion layer, and an effect of preventing peeling can be obtained.

  6A to 6G are schematic cross-sectional views showing the basic manufacturing process of a conventional ink jet recording head.

The silicon substrate 1 shown in FIG. 6A uses a silicon substrate having a crystal orientation 100, and a plurality of ink discharge energy generating elements 3 such as heating resistance elements are arranged. A Ta film is provided as an insulating layer film 4 and an anti-cavitation layer 5 on the ink discharge energy generating element. The back surface of the silicon substrate 1 is entirely covered with a SiO ₂ film 6.

  First, as shown in FIG. 6 (B), a polyetheramide resin (adhesion layer) 7 is applied to the surface of the silicon substrate 1 and a polyetheramide resin 8 is applied to the back surface, and cured by baking. Thereafter, in order to pattern the polyetheramide resin (adhesion layer) 7, a positive resist is applied, exposed and developed by spin coating or the like, and the polyetheramide resin 7 is patterned by dry etching or the like, and the positive resist is removed. To do. The same process is performed on the polyetheramide resin 8 and patterning is performed.

  Then, as shown in FIG. 6C, the mold material 10 (positive resist) that becomes the ink flow path is patterned on the surface.

  Next, as shown in FIG. 6D, a coated photosensitive resin 12 is formed on the mold material by spin coating or the like. A water repellent material 13 is formed on the coated photosensitive resin by laminating a dry film or the like. The ink discharge port 14 patterns the coated photosensitive resin 12 and the water repellent material 13 by performing exposure and development using ultraviolet rays, deep UV light, or the like.

Next, as shown in FIG. 6E, the surface and side surfaces of the silicon substrate 1 on which the mold material 10 and the coated photosensitive resin 12 are formed are covered with a protective material 15 by spin coating or the like. The SiO ₂ film 6 formed on the back surface of the silicon substrate 1 is patterned by wet etching using the polyether amide resin 8 as a mask to expose the Si surface 11 which is the starting surface of anisotropic etching.

  Next, as shown in FIG. 6F, an ink supply port 16 is provided in the silicon substrate 1. The ink supply port 16 is formed by chemically etching the silicon substrate 1, for example, anisotropic etching with a strong alkaline solution such as TMAH (tetramethylammonium hydroxide). When anisotropic etching is performed from the back surface, the sacrificial layer 2 on the front surface is reached, and the ink supply port 16 is formed.

  Next, as shown in FIG. 6G, the polyetheramide resin 8 and the protective material 15 are removed. Further, the mold material 10 is eluted from the ink discharge port 14 and the ink supply port 16 to remove the insulating layer film 4 and the like, thereby forming an ink flow path (foaming chamber) 17.

  In recent years, in image formation using an ink jet recording head, high speed and high quality have been demanded, so that the number of ink discharge ports of the ink jet recording head is increased and the ink discharge port size is several μm to several tens of micrometers. It is very small as μm.

  However, when i-line exposure is performed using an i-line stepper to form a more advanced ink discharge port shape (i-line: wavelength 365 nm), the ink discharge port has a desired pattern shape due to the influence of reflected light from the base. Is different and has a distorted shape.

As a method of suppressing the deformation of the ink discharge port, a method of forming an antireflection film that attenuates reflected light from the base can be considered. For example, in Patent Document 3, a silicon nitride film having an N / Si composition ratio of 0.50 to 0.85 is formed as an antireflection film in i-line exposure with a thickness of 200 nm or less, and reflected light from the pattern film is emitted as light. A method of synergistically attenuating between absorption and optical interference is shown.
JP-A-6-286149 JP 11-348290 A JP 7-37799 A

  With reference to Patent Document 3, by providing an antireflection film such as SiN on the anti-cavitation layer, the influence of reflected light can be reduced. However, from the viewpoint of energy saving and the like, a manufacturing method that leaves no extra film other than the anti-cavitation layer in the ink discharge energy generating element portion is desired.

  The present invention provides a method for manufacturing an ink jet recording head that is not affected by reflection by the underlayer even when an ink discharge port is formed by i-line exposure, can have a stable pattern shape, and has no antireflection film remaining. For the purpose.

  An ink jet recording head manufacturing method according to the present invention includes a substrate having a plurality of ink discharge energy generating elements, an ink flow path for holding droplets on the ink discharge energy generating elements, and an ink formed by i-line exposure. In the method for manufacturing an ink jet recording head having an ink discharge port for discharging the ink, the following steps (1) to (6) are included.

(1) A step of forming an antireflection film on the substrate having the ink discharge energy generating element (2) A step of forming a mold material that becomes an ink flow path on the antireflection film (3) On the peripheral surface of the mold material (4) A step of applying an i-line exposure to the coated photosensitive resin from a direction perpendicular to the substrate surface, developing, and forming an ink discharge port. A step of removing the mold material by a method capable of selectively removing the mold material. (6) A step of removing the antireflection film by a method capable of selectively removing the antireflection film.

  Even when the ink discharge port is formed by i-line exposure, the influence of the reflection of the base is mitigated, and a stable pattern shape is possible. Furthermore, removing the antireflection film is also effective for energy saving measures.

  Embodiments of the present invention will be described with reference to the drawings. FIG. 2 is an example of a cross-sectional view of the ink jet recording head manufactured in the present embodiment. FIG. 3 is a schematic perspective view of an ink jet recording head for carrying out the present invention. FIG. 2 is a cross-sectional view taken along line A-A ′ of FIG. 3.

  As shown in FIG. 3, the ink jet recording head of the present invention has a silicon substrate 1 on which ink discharge energy generating elements 3 are formed in two rows at a predetermined pitch.

  The silicon substrate 1 is preferably a silicon single crystal body, and when the through hole of the substrate is formed by anisotropic etching, the silicon substrate 1 is preferably a silicon single crystal body having a crystal orientation of 100. In the case where the through hole of the substrate is formed by dry etching or excimer laser, a silicon single crystal having a crystal orientation 110 may be used. The front and back of the silicon substrate may be covered with a thermal oxide film of a silicon oxide film, respectively, and the thermal oxide film provided on the surface of the silicon substrate may be provided with a membrane portion from which the thermal oxide film has been removed. Good.

  The ink discharge energy generating element 3 in the present invention is not particularly limited as long as the discharge energy for discharging the ink droplet is given to the ink and the ink droplet can be discharged from the ink discharge port 14. For example, when a heating resistance element is used as the ink ejection energy generating element 3, the heating resistance element heats nearby ink, thereby causing a state change in the ink and generating ejection energy.

On the ink discharge energy generating element, as shown in FIG. 2, an insulating layer film 4 made of SiO ₂ or the like for imparting electrical insulation and an anti-cavitation film 5 made of Ta or the like for suppressing corrosion due to ink. Is formed.

  Further, an adhesion layer 7 made of polyetheramide resin is formed on the silicon substrate. The presence of the adhesion layer 7 improves the adhesion force between the cavitation resistant film 5 made of Ta and the coated photosensitive resin 12, and an effect of preventing peeling can be obtained. As the polyetheramide resin, “HIMAL” (trade name, manufactured by Hitachi Chemical Co., Ltd.) or the like can be used.

  On the adhesive layer 7, an ink discharge port 14 that opens above each ink discharge energy generating element 3 and an ink flow path for holding droplets on the ink discharge energy generating element (covered photosensitive resin 12). A foaming chamber) 17 is formed.

  The coated photosensitive resin 12 used in the present invention is preferably a photosensitive material containing a photosensitive resin and a photopolymerization initiator from the viewpoint of patterning accuracy, but is not limited thereto. For example, a negative photosensitive resin containing an epoxy resin or the like can be used.

  The distance (OH) 18 between the ink discharge port 14 and the ink discharge energy generating element 3 affects the ink discharge characteristics.

An ink supply port 16 formed by anisotropic etching of the silicon substrate 1 using the SiO ₂ film 6 as a mask is opened between two rows of the ink ejection energy generating elements 3.

  By applying a pressure generated by the ink discharge energy generating element 3 to the ink filled in the ink flow path 17 via the ink supply port 16, ink droplets are discharged from the ink discharge port 14, and are recorded on the recording medium. Recording is performed by adhering.

  The ink jet recording head of the present invention can be mounted on an apparatus such as a printer, a copying machine, a facsimile having a communication system, a word processor having a printer unit, or an industrial recording apparatus combined with various processing apparatuses. Further, by using the ink jet recording head of the present invention, recording can be performed on various recording media such as paper, thread, fiber, leather, metal, plastic, glass, wood, and ceramic. In the present invention, “recording” means not only giving an image having a meaning such as a character or a figure to a recording medium but also giving an image having no meaning such as a pattern.

  Hereinafter, examples of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

[Example 1]
The steps for producing the ink jet recording head in Example 1 will be described with reference to FIG.

  1A to 1I are cross-sectional views taken along the line A-A ′ of FIG. 3, and are schematic cross-sectional views illustrating basic manufacturing steps of the ink jet recording head of the present invention.

On the silicon substrate shown in FIG. 1A, a plurality of ink discharge energy generating elements 3 such as heating resistors are arranged. An insulating layer film 4 and an anti-cavitation layer 5 are provided on the ink discharge energy generating element. Insulating layer film 4 is made of SiO _2. Further, a Ta film is used for the anti-cavitation layer 5. The back surface of the silicon substrate 1 is entirely covered with a SiO ₂ film 6. Furthermore, a sacrificial layer 2 necessary for forming the ink supply port 16 with an alkaline solution is provided on the silicon substrate 1.

  The sacrificial layer 2 can be etched with an alkaline solution, and is formed of polysilicon, aluminum having a high etching rate, aluminum silicon, aluminum copper, aluminum silicon copper, or the like. The wiring of the ink discharge energy generating element 3 and the semiconductor element for driving the ink discharge energy generating element 3 are not shown.

  First, as shown in FIG. 1B, an antireflection film 9 was formed. SiN is preferably used as the antireflection film. In this embodiment, a SiN film is used as the antireflection film.

  The refractive index n of the SiN film at a wavelength of 633 nm is preferably in the range of 2.05 <n. It is known that the refractive index n of a SiN film at a wavelength of 633 nm has a correlation with the composition ratio (N / Si) of the SiN film (Patent Document 3). An SiN film having a refractive index n in the above-mentioned range at a wavelength of 633 nm can further reduce the reflected light from the base when forming the ink discharge port by i-line exposure, and thus can suppress deformation of the ink discharge port. The refractive index n of the SiN film used in this example at a wavelength of 633 nm was 2.05.

  Note that the SiN film can be formed by plasma CVD, room temperature CVD, or the like. In this embodiment, the SiN film was formed by room temperature CVD.

  Further, the polyetheramide resin layer 8 was applied to the back surface of the silicon substrate 1 by spin coating and cured by baking. “HIMAL” (trade name, manufactured by Hitachi Chemical Co., Ltd.) was used as the polyetheramide resin. Thereafter, in order to form the ink supply port 16 in the polyetheramide resin layer 8 on the back surface, the i-line resist which is a positive resist was patterned, and the positive resist was peeled off.

  Next, as shown in FIG. 1C, a positive photosensitive resin, which is a soluble resin, was applied on the antireflection film. In this example, a positive resist (trade name: “ODUR”, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied by spin coating. Then, the mold material 10 used as the ink flow path 17 was formed by performing exposure by ultraviolet rays, Deep UV, and the like and development.

  Further, the antireflection film 9 was etched using the mold material 10 as a mask, and the antireflection film 9 was left only under the mold material. The antireflection film 9 was etched by dry etching.

  Next, as shown in FIG. 1D, a coated photosensitive resin 12 serving as an ink ejection member was applied to the peripheral surface of the mold material by spin coating. As the covering photosensitive resin, “CR” (trade name, negative resist) was used. A water repellent material 13 was formed on the coated photosensitive resin by laminating a dry film. The ink discharge port 14 was formed by developing the coated photosensitive resin 12 by performing i-line exposure from a direction perpendicular to the substrate surface using an i-line stepper.

  Next, as shown in FIG. 1E, the surface and side surfaces of the silicon substrate 1 on which the mold material 10 and the coated photosensitive resin 12 were patterned were covered with a protective material 15 by spin coating or the like. The protective material 15 is not particularly limited as long as it is a protective material for preventing flaws such as conveying the apparatus and can sufficiently withstand a strong alkaline solution used when performing anisotropic etching. The protective material 15 can prevent the water repellent material 13 and the like from being deteriorated by performing anisotropic etching.

Further, the SiO ₂ film 6 on the back surface of the silicon substrate 1 was patterned by wet etching using the polyether amide resin layer 8 as a mask to expose the Si surface 11 that was the starting surface for anisotropic etching.

  Next, as shown in FIG. 1F, the silicon substrate 1 was chemically etched with a strong alkaline solution. In this example, TMAH was used as the strong alkali solution. Since the crystal orientation of the silicon substrate 1 is 100, the ink supply port 16 is formed by reaching the sacrificial layer 2 on the surface.

  Next, as shown in FIG. 1G, the polyetheramide resin 8, the insulating layer film 4 and the like were removed by etching. The etching was performed by dry etching.

  Next, as shown in FIG. 1 (H), the protective material 15 was removed, and the mold material 10 was eluted from the ink supply port 16 and removed. The mold material 10 needs to be removed by a method that can selectively remove the mold material. After the entire surface is exposed to deep UV light, development and drying may be performed. Sonic immersion is sufficient.

  Next, as shown in FIG. 1I, the antireflection film 9 exposed in the space after removing the mold material is selectively removed by etching to remove the ink flow path (foaming chamber). 17 was formed. Etching of the antireflection film 9 was performed by wet etching.

  Thereafter, the silicon substrate 1 on which the ink discharge portion was formed was cut and separated into chips by a dicing saw, and electrical bonding for driving the ink discharge energy generating element 3 was performed. Furthermore, a chip tank member for supplying ink was connected to complete an ink jet recording head.

[Example 2]
In Example 2, a process for producing the ink jet recording head of FIG. 2 will be described with reference to FIG. In addition, when there was no description in particular about each material, the material similar to Example 1 was used.

  4A to 4J are cross-sectional views taken along the line A-A ′ of FIG. 3, and are schematic cross-sectional views for illustrating a basic manufacturing process of the ink jet recording head of the present invention.

On the silicon substrate shown in FIG. 4A, a plurality of ink discharge energy generating elements 3 such as heating resistors are arranged. An insulating layer film 4 and an anti-cavitation layer 5 are provided on the ink discharge energy generating element. The back surface of the silicon substrate 1 is entirely covered with a SiO ₂ film 6. Furthermore, a sacrificial layer 2 necessary for forming the ink supply port 16 with an alkaline solution is provided on the silicon substrate 1.

  First, as shown in FIG. 4B, an adhesion layer 7 made of a polyetheramide resin is formed on the joint surface between the anti-cavitation layer 5 and the coated photosensitive resin 12, and a polyetheramide resin layer 8 is formed on the back surface of the silicon substrate 1. Was applied by spin coating and cured by baking. Thereafter, in the same manner as in Example 1, in order to form the ink supply port 16 in the polyetheramide resin layer 8 on the back surface, a positive resist was applied by spin coating, exposed, developed, and patterned by dry etching, and the positive type The resist was peeled off. The back surface may be protected while being patterned. Similarly, the adhesion layer 7 was formed.

  Next, as shown in FIG. 4C, an antireflection film 9 made of SiN was formed. In the case where an adhesion layer is present on the ink jet recording head, it is preferable to form a SiN film serving as an antireflection film by room temperature CVD.

  Next, as shown in FIG. 4D, a positive resist, which is a soluble resin, is applied by spin coating, exposed to ultraviolet rays, Deep UV, etc., and developed to form an ink flow path as in Example 1. Material 10 was formed.

  Further, the antireflection film 9 was etched using the mold material 10 as a mask, and the antireflection film 9 was left only under the mold material. Etching of the antireflection film 9 was performed by wet etching.

  Next, as shown in FIG. 4E, the coated photosensitive resin 12 was applied by spin coating as in Example 1. A water repellent material 13 was formed on the coated photosensitive resin by laminating a dry film.

  The ink discharge port 14 was formed by performing i-line exposure and development using the i-line stepper on the coated photosensitive resin 12 as in Example 1.

  Next, as shown in FIG. 4 (F), the surface and side surfaces of the silicon substrate 1 on which the mold material 10 and the coated photosensitive resin 12 are patterned are spin-coated with a protective material 15 as in the first embodiment. Covered by.

Further, the SiO ₂ film 6 on the back surface of the silicon substrate 1 is patterned by wet etching using the polyetheramide resin layer 8 as a mask in the same manner as in Example 1 to form the Si surface 11 that becomes the starting surface of anisotropic etching. Exposed.

  Next, as shown in FIG. 4G, the silicon substrate 1 was chemically etched by TMAH as in Example 1. As a result, the ink supply port 16 was formed by reaching the sacrificial layer 2 on the surface.

  Next, as shown in FIG. 4H, the polyetheramide resin 8, the insulating layer film 4 and the like were removed by etching as in Example 1.

  Next, as shown in FIG. 4I, the protective material 15 was removed in the same manner as in Example 1, and the mold material 10 was eluted from the ink supply port 16 and removed. The mold material 10 can be removed by developing and drying the entire surface exposed to deep UV light, followed by ultrasonic dipping as needed.

  Next, as shown in FIG. 4 (J), the ink flow path (foaming chamber) 17 is removed by selectively removing the antireflection film 9 exposed in the space after removing the mold material by etching. Formed. Wet etching was used for etching the antireflection film 9.

  Thereafter, the silicon substrate 1 on which the ink discharge portion was formed was cut and separated into chips by a dicing saw, and electrical bonding for driving the ink discharge energy generating element 3 was performed. Furthermore, a chip tank member for supplying ink was connected to complete an ink jet recording head.

[Example 3]
In Example 3, a process for producing the ink jet recording head of FIG. 2 will be described with reference to FIG. In addition, when there was no description in particular about each material, the material similar to Example 1 was used.

  FIGS. 5A to 5H are cross-sectional views taken along line A-A ′ of FIG. 3, and are schematic cross-sectional views illustrating basic manufacturing steps of the ink jet recording head of the present invention.

On the silicon substrate shown in FIG. 5A, a plurality of ink discharge energy generating elements 3 such as heating resistors are arranged. An insulating layer film 4 and an anti-cavitation layer 5 are provided on the ink discharge energy generating element. The back surface of the silicon substrate 1 is entirely covered with a SiO ₂ film 6. A sacrificial layer 2 necessary for forming the ink supply port 16 with an alkaline solution is provided on the silicon substrate 1.

  First, as shown in FIG. 5B, an adhesion layer 7 made of a polyetheramide resin is applied to the surface of the silicon substrate 1 and a polyetheramide resin layer 8 is applied to the back surface by spin coating and cured by baking. Thereafter, in the same manner as in Example 1, in order to form the ink supply port 16 in the polyetheramide resin layer 8 on the back surface, a positive resist was applied by spin coating, exposed, developed, and patterned by dry etching, and the positive type The resist was peeled off. The back surface may be protected while being patterned.

  Next, as shown in FIG. 5C, the coating photosensitive resin 12 that becomes the side wall of the ink flow path 17 was applied by spin coating, and exposure and development with ultraviolet light, deep UV, or the like were performed to form the flow path side wall. Further, when the coated photosensitive resin 12 was applied by spin coating, a solvent for dissolving the coated photosensitive resin 12 was selected so as not to dissolve the polyetheramide layer 7.

  Further, the polyetheramide resin (adhesion layer) 7 was etched by dry etching so as to have the same shape as the channel side wall.

  Next, as shown in FIG. 5D, an SiN antireflection film 9 was formed by room temperature CVD as in Example 1.

  Next, as shown in FIG. 5E, the mold material 10 was applied by spin coating to the inside of the ink channel side wall that becomes the ink channel and baked. The mold material 10 also has a role of preventing the channel sidewall from collapsing when performing chemical mechanical polishing (CMP) described later. When applying the mold material 10 by spin coating, a solvent was selected so as not to dissolve the polyetheramide layer 7 and the coated photosensitive resin 12.

  Next, as shown in FIG. 5F, the surface was polished and cleaned by chemical mechanical polishing (CMP) from the upper surface of the mold material 10 until the upper surface of the channel side wall was exposed. In order to prevent or suppress scratches (fine scratches) and dishing (irregularities) that occur during polishing, the polishing conditions (pressure, rotation speed, polishing liquid (alumina, silica, etc.)) were tuned and performed under optimum conditions.

  Next, as shown in FIG. 5G, the coated photosensitive resin 12 was applied onto the mold material and the ink flow path side wall by spin coating. The application was performed by the same method as the application method of the coating photosensitive resin 12 which becomes the side wall of the ink flow path 17. Further, a water repellent material 13 was formed on the coated photosensitive resin by laminating a dry film.

  Further, the coated photosensitive resin 12 was exposed and developed using an i-line stepper in the same manner as in Example 1 to form the ink discharge port 14.

  Next, as shown in FIG. 5H, the surface and side surfaces of the silicon substrate 1 on which the mold material 10 and the coated photosensitive resin 12 are patterned are spin-coated with a protective material 15 as in the first embodiment. Covered by.

Further, the SiO ₂ film 6 on the back surface of the silicon substrate 1 is patterned by wet etching using the polyetheramide resin layer 8 as a mask in the same manner as in Example 1 to expose the Si surface 11 which is the starting surface of anisotropic etching. did.

  Next, as shown in FIG. 5I, the silicon substrate 1 was chemically etched by TMAH as in Example 1. As a result, the ink supply port 16 was formed by reaching the sacrificial layer 2 on the surface.

  Next, as shown in FIG. 5J, the polyetheramide resin 8, the insulating layer film 4 and the like were removed by etching as in Example 1.

  Next, as shown in FIG. 5K, the protective material 15 was removed in the same manner as in Example 1, and the mold material 10 was eluted from the ink supply port 16 and removed. The mold material 10 can be removed by developing and drying the entire surface exposed to deep UV light, followed by ultrasonic dipping as needed.

  Next, as shown in FIG. 5 (L), the antireflection film 9 exposed in the space after removing the mold material is selectively removed by etching to remove the ink flow path (foaming chamber). 17 was formed. Etching of the antireflection film 9 can be wet etching or dry etching.

  Thereafter, the silicon substrate 1 on which the ink discharge portion was formed was cut and separated into chips by a dicing saw, and electrical bonding for driving the ink discharge energy generating element 3 was performed. Furthermore, a chip tank member for supplying ink was connected to complete an ink jet recording head.

FIG. 2 is a schematic cross-sectional view of an inkjet recording head example of Example 1 of the present invention. It is sectional drawing of the inkjet recording head of this invention. 1 is a schematic perspective view of an ink jet recording head of the present invention. It is typical sectional drawing which shows the basic manufacturing process of Example 2 of this invention. It is typical sectional drawing which shows the basic manufacturing process of Example 3 of this invention. It is typical sectional drawing which shows the basic manufacturing process of the conventional inkjet recording head.

Explanation of symbols

1 silicon substrate 2 sacrificial layer 3 the ink discharge energy generating element 4 insulating layer film 5 anti-cavitation film 6 SiO ₂ film 7 polyetheramide resin (adhesion layer)
8 Polyetheramide resin 9 Antireflection film 10 Mold material 11 Si surface 12 Coating photosensitive resin 13 Water repellent material 14 Ink discharge port 15 Protective material 16 Ink supply port 17 Ink flow path (foaming chamber)
18 OH

Claims (9)

A substrate having a plurality of ink discharge energy generating elements;
An ink flow path for holding droplets on the ink discharge energy generating element;
In a method for manufacturing an ink jet recording head having an ink discharge port for discharging ink formed by i-line exposure,
The manufacturing method of the inkjet recording head characterized by including the process of following (1) to (6).
(1) A step of forming an antireflection film on the substrate having the ink discharge energy generating element (2) A step of forming a mold material that becomes an ink flow path on the antireflection film (3) On the peripheral surface of the mold material (4) A step of applying an i-line exposure to the coated photosensitive resin from a direction perpendicular to the substrate surface, developing, and forming an ink discharge port. A step of removing the mold material by a method capable of selectively removing the mold material. (6) The antireflection film exposed in the space after removing the mold material is removed by a method capable of selectively removing the antireflection film. Process   The step of etching the antireflection film with the mold material as a mask and leaving the antireflection film only under the mold material between the step (2) and the step (3). 2. A method for producing an ink jet recording head according to 1.   3. The method of manufacturing an ink jet recording head according to claim 1, wherein the substrate is a substrate on which an adhesion layer made of a polyetheramide resin is formed at least on a joint surface with the coated photosensitive resin. A substrate having a plurality of ink discharge energy generating elements;
An ink flow path for holding droplets on the ink discharge energy generating element;
In a method for manufacturing an ink jet recording head having an ink discharge port for discharging ink formed by i-line exposure,
A method for producing an ink jet recording head, comprising the following steps (a) to (i):
(A) A step of forming an ink flow path side wall serving as an ink flow path on a substrate on which a close contact layer made of a polyetheramide resin is formed using a coated photosensitive resin. (C) A step of forming an antireflection film on the substrate on which the ink channel side wall and the adhesion layer are formed (d) A step of forming a mold material inside the ink channel side wall (E) Polishing from the upper surface of the mold material to expose the upper surface of the ink flow channel side wall (f) Using the coated photosensitive resin, an ink flow channel is formed on the mold material and the ink flow channel side wall. Step of forming (g) Step of forming the ink discharge port by i-line exposure to the coated photosensitive resin from a direction perpendicular to the substrate surface (h) Step of removing the mold material from the mold material (I) The antireflection film is Step of removing the barrier film with selectively removable way   The inkjet recording according to any one of claims 1 to 4, wherein the antireflection film is a SiN film, the mold material is made of a positive photosensitive resin, and the covering photosensitive resin is made of a negative photosensitive resin. Manufacturing method of the head.   6. The method of manufacturing an ink jet recording head according to claim 1, wherein the step of removing the antireflection film by a selectively removable method is a step of removing by etching.   6. The method of manufacturing an ink jet recording head according to claim 1, wherein the step of removing the mold material by a selectively removable method is a step of removing by etching.   5. An ink jet printing method, wherein the step of forming the antireflection film on the substrate on which the adhesion layer made of the polyetheramide resin according to claim 3 or 4 is formed is a step of forming a SiN film by room temperature CVD. A manufacturing method of a recording head.   9. A method of manufacturing an ink jet recording head, wherein the SiN film according to claim 5 has a refractive index n in a range of 2.05 <n at a wavelength of 633 nm.