JP2009176807A - Substrate processing apparatus and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing method and apparatus whose throughput is increased. <P>SOLUTION: A substrate processing apparatus 10 is equipped with four ports equally arranged along the periphery of a transfer stage 22 and further equipped with an LL chamber 12A, an etching chamber 13A, and a cooling chamber 15A above the ports. By repeatedly lifting and turning the transfer stage 22, the substrate processing apparatus 10 delivers a substrate group on every port into and from the above chamber at identical timing, and transfers the substrate groups on the ports in the order of the LL chamber 12A, the etching chamber 13A, and the cooling chamber 15A. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

  In the manufacturing process of a semiconductor device, various surface treatment processes are performed in order to obtain desired device characteristics. For example, in the pre-process for forming the contact plug, the natural oxide film formed on the surface of the silicon wafer is chemically removed by surface treatment in order to reduce the contact resistance.

As a method for removing the natural oxide film, a method of chemically etching the natural oxide film by adsorbing a fluorine-based reaction gas on the surface of the natural oxide film is known. Patent Document 1 discloses that an etchant (for example, NH _X ), which is an intermediate product, is formed on the surface of a silicon substrate by using a reactive gas such as nitrogen trifluoride (NF ₃ ) and hydrogen radicals and reducing the reactive gas with hydrogen radicals. F _Y : x and y are arbitrary integers). The etchant that is an intermediate product reacts with the silicon oxide film to generate a reaction product (for example, an ammonia complex). The reaction product is thermally decomposed by heating the wafer and exhausted as ammonium silicofluoride ((NH ₄ ) ₂ SiF ₆ ) gas.

  When etching is performed, the etchant also adheres to the inner wall of the processing chamber. Therefore, if etching is repeated a plurality of times, the etchant adhering to the inner wall of the processing chamber becomes thicker, and particles are generated by being removed from the inner wall of the processing chamber. Therefore, in Patent Document 1, when the reaction product is thermally decomposed by heating the wafer, a purge gas is introduced into the processing space, and the reaction product or the pyrolysis gas is exhausted by being placed on the purge gas flow. According to this, the reaction between the reaction product or pyrolysis gas and the treatment film is suppressed, and the number of particles can be reduced.

In order to improve the productivity of semiconductor devices, batch-type vertical substrate processing apparatuses are widely used as apparatuses for removing natural oxide films. In Patent Document 2, a surface treatment chamber for performing etching, a sublimation chamber for exhausting reaction products, and a CVD chamber for forming a CVD film are mounted on a common hermetic chamber so that they can communicate with each other. To do. The hermetic chamber connected to each processing chamber has a boat loaded with wafers inside, purges the periphery of the wafer with nitrogen gas, and sequentially carries the wafers into and out of each chamber by transporting the boat. . Thus, in Patent Document 2, a wafer subjected to surface treatment in the surface treatment chamber and the sublimation chamber can be carried into the CVD chamber immediately after the treatment, and the influence of the natural oxide film on the CVD film is ensured. Can be reduced.
JP 2005-203409 A JP 2002-1000057 A

  When performing surface treatment on a wafer, the substrate processing apparatus of Patent Document 2 first opens the hermetic chamber and loads the wafer into the boat, then transports the boat in the order of the surface treatment chamber, the sublimation chamber, and the CVD chamber, The loading / unloading of the loaded wafer into / from each chamber is repeated. Then, the substrate processing apparatus removes the surface-treated wafer from the boat again by opening the hermetic chamber.

While performing the surface treatment, the substrate processing apparatus continues to process the three processing steps in series (serial processing) using the three processing chambers connected to the hermetic chamber. For this reason, one processing chamber must wait until all processing operations of other processing chambers are completed. For example, the CVD chamber must wait until the processing operations of the hermetic chamber, the surface treatment chamber, and the sublimation chamber are all completed. As a result, in the substrate processing apparatus, the waiting time of each processing chamber is overlapped and becomes long, and the number of processed wafers per unit time, that is, the throughput is greatly impaired.

  Patent Document 2 proposes that the surface treatment chamber is also used as a sublimation chamber to shorten the boat transfer time in order to improve the throughput. However, the time required to transfer the boat is generally several tens of seconds, which is several minutes compared with the etching time of the natural oxide film, the heating time of the wafer, and the film formation time of the CVD film. It is a sufficiently short time. In other words, the boat transfer time does not completely limit the throughput of the substrate processing apparatus, and it is difficult to sufficiently improve the throughput of the substrate processing apparatus only by reducing the time.

  The present invention has been made to solve the above problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method with improved throughput.

  In order to achieve the above object, a substrate processing apparatus according to claim 1 is a substrate processing apparatus for performing a surface treatment on a substrate group consisting of a plurality of substrates, and a plurality of boats arranged at predetermined intervals, A plurality of processing chambers arranged in one direction of the boat; and a transport unit that carries the boats into and out of the plurality of processing chambers, respectively. Or loading a substrate group in the boat to the outside and loading a different external substrate group into the boat, a reaction chamber in which the substrate group in the boat is exposed to a reaction gas, and the boat The gist of the invention is that it comprises a heating chamber for heating the substrate group.

  According to the substrate processing apparatus of the first aspect, when one substrate group is carried into one processing chamber, another one substrate group is transferred to another one processing chamber. For example, when one substrate group is carried into the loading chamber, another one substrate group is transferred to the reaction chamber, and another different substrate group is transferred to the heating chamber. Therefore, the present substrate processing apparatus can expose another substrate group to a reactive gas at the timing of transferring or loading one substrate group, and heat-treats another different substrate group. be able to. As a result, the substrate processing apparatus can perform processing in the reaction chamber, processing in the heating chamber, and processing in the loading chamber in parallel between different boats (parallel processing). Therefore, the present substrate processing apparatus can offset the time required for transferring and loading the substrate group by the reaction processing time or the heat processing time, thereby improving the substrate processing throughput.

  A substrate processing apparatus according to a second aspect is the substrate processing apparatus according to the first aspect, wherein the plurality of processing chambers further include a cooling chamber for cooling a substrate group in the boat. .

  According to the substrate processing apparatus of the second aspect, when one substrate group is transferred to one processing chamber, the other substrate group is transferred to the cooling chamber. Therefore, this substrate processing apparatus can offset the time required for transferring and loading the substrate group by any one of the reaction processing time, the heat processing time, and the cooling processing time of the other substrate group. . Therefore, this substrate processing apparatus can increase the number of processing steps to be executed at the same timing by the amount of the cooling chamber, and can further improve the throughput of the substrate processing. In addition, since this substrate processing apparatus performs the cooling process after the heating process independently in the cooling chamber in parallel with the other heating processes, the substrate processing apparatus can perform the cooling according to the heating conditions regardless of the change in the heating temperature or the heating rate. , And can be executed without losing throughput.

A substrate processing apparatus according to a third aspect is the substrate processing apparatus according to the first or second aspect, wherein the transfer unit includes a stage that rotates with the four boats mounted on one surface. By repeating the normal direction of the surface with respect to the four boats and the conveyance in the rotational direction of the stage, the boats are loaded into the four processing chambers in the order along the rotational direction, respectively. In addition, each of the four processing chambers is arranged in the rotation direction according to the order of the processing steps.

  According to the substrate processing apparatus of the third aspect, since all the processing chambers are arranged in the order of the processing steps, all the processing steps for one substrate group can be executed by rotating the stage once. Can do. In addition, since all the boats are mounted in the rotation direction, the final process (transfer process) to the preceding substrate group and the initial process (loading process) to the subsequent substrate group for one boat. Can be executed at the same timing. Therefore, this substrate processing apparatus can perform the transfer processing and the loading processing in parallel (parallel processing) between different substrate groups processed using a single boat. Therefore, this substrate processing apparatus can further improve the throughput of the substrate processing.

  The substrate processing apparatus according to claim 4 is the substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is connected to all the processing chambers and accommodates the stage; The gist of the invention is to have a partition that divides an internal space for each boat and rotates together with the stage.

  According to the substrate processing apparatus of the fourth aspect, inflow and outflow (cross contamination) of gas between the processing chambers are suppressed by the partition walls. Therefore, this substrate processing apparatus supplements the gas flowing out into the other processing chambers by the time for exhausting and purging the gas flowing in from the other processing chambers as much as the crosstalk between the processing chambers is suppressed. Time etc. can be shortened. Therefore, this substrate processing apparatus can shorten the processing time in each processing chamber, and can further improve the throughput of the substrate processing.

  The substrate processing apparatus according to claim 5 is the substrate processing apparatus according to claim 4, wherein the transfer chamber is closer to the reaction chamber than the loading chamber, and from the loading chamber. The gist of the present invention is to have an exhaust system for exhausting the internal space at a position close to the heating chamber.

  According to the substrate processing apparatus of the fifth aspect, the gas flowing out from the wafer reaction chamber or the heating chamber is exhausted in a direction away from the loading chamber. Therefore, this substrate processing apparatus can suppress the gas contamination accompanying the substrate processing with respect to the substrate group after the substrate processing and the substrate group before the substrate processing. Therefore, this substrate processing can shorten the purge time for cleaning the substrate group after the substrate processing and the purge time for cleaning the substrate group before the substrate processing, thereby further improving the throughput of the substrate processing. can do.

  A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to the fifth aspect, wherein the transfer chamber has a purge mechanism that purges the spaces defined by the partition walls.

  According to the substrate processing apparatus of the sixth aspect, the gas flowing out from the reaction chamber or the heating chamber is exhausted along with the purge gas flow in the direction away from the loading chamber. Therefore, this substrate processing apparatus can further suppress the contamination of the substrate accompanying the substrate processing with respect to the substrate group after the substrate processing and the substrate group before the substrate processing.

  The substrate processing apparatus according to claim 7 is the substrate processing apparatus according to any one of claims 4 to 6, wherein the transfer chamber is provided in the rotation direction of the heating chamber, and the partition wall is provided. The gist of the present invention is to have a cooling mechanism that cools the partition walls by injecting a gas into them.

  According to the substrate processing apparatus of the seventh aspect, since the cooling mechanism cools the partition wall, deformation and alteration of the partition wall are suppressed. Therefore, the substrate processing apparatus can more reliably suppress crosstalk between the processing chambers, and more reliably improve the throughput of the substrate processing.

  In order to achieve the above object, a substrate processing method according to claim 8 is a substrate processing method in which a substrate group consisting of a plurality of substrates is loaded in each of a plurality of boats and a surface treatment is performed on each of the substrate groups. Loading the boat into the loading chamber, transferring a group of substrates in the boat from the loading chamber to the outside and loading different external substrate groups into the boat, and loading the boat into the reaction chamber. A step of exposing the substrate group in the boat to a reactive gas, a step of bringing the boat into a heating chamber and heating the substrate group in the boat, and a step of bringing the boat into a cooling chamber and placing the substrate in the boat Cooling the group, making the process time of each process substantially the same, loading and unloading the different boats with respect to each chamber at substantially the same timing, and each of the plurality of boats The loading chamber, the counter Chamber, the heating chamber, is summarized in that the loading and unloading in the order of the cooling chamber.

  According to the substrate processing method of the eighth aspect, when one substrate group is carried into one processing chamber, another one substrate group is transferred to another one processing chamber. For example, when one substrate group is carried into the loading chamber, another one substrate group is transferred to the reaction chamber, and another different substrate group is transferred to the heating chamber. Therefore, the present substrate processing method can expose another substrate group to a reaction gas at the timing of transferring or loading one substrate group, and heat-treats another different substrate group. The cooling process can be applied to another different group of substrates. As a result, in the present substrate processing method, the processing for transferring or loading the substrate group, the processing for exposing the substrate group to the reaction gas, the processing for heating the substrate group, and the processing for cooling the substrate group are performed in parallel between different boats. (Parallel processing). Therefore, this substrate processing method can offset the time required for transferring and loading the substrate group by the reaction processing time, the heat processing time, or the cooling processing time, thereby improving the substrate processing throughput. Can do.

  As described above, according to the present invention, it is possible to provide a substrate processing method and a substrate processing apparatus with improved throughput.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. FIG. 1 is a perspective view showing the substrate processing apparatus 10.
(Substrate processing equipment)
In FIG. 1, the substrate processing apparatus 10 mounts four different processing chambers in a transfer unit 11 formed in a box shape. The four different processing chambers include a load lock unit (hereinafter simply referred to as LL unit 12) as a loading chamber, an etching unit 13, a heating unit 14, and a cooling unit 15. These LL unit 12, etching unit 13, heating unit The unit 14 and the cooling unit 15 are connected to one common surface (hereinafter simply referred to as the upper surface 11 s) of the transport unit 11. The LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15 are chambers each formed in a covered cylindrical shape extending in the vertical direction, and have an internal space that communicates with the inside of the transport unit 11.

First, the LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15 will be described below. 2 and 3 are a plan view and a side view showing the substrate processing apparatus 10, respectively.
In FIG. 2, the center axes of the LL part 12, the etching part 13, the heating part 14, and the cooling part 15 are respectively arranged in the circumferential direction on a virtual circle C (dotted line in FIG. 2) drawn on the upper surface 11 s. Arranged. In the present embodiment, the LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15.
The points on the central axis are referred to as an LL position 12P, an etching position 13P, a heating position 14P, and a cooling position 15P, respectively. A vertical line extending in the vertical direction and including the center of the virtual circle C is referred to as a central axis A.

  In FIG. 1, an LL section 12 includes a covered cylindrical load lock chamber (hereinafter simply referred to as an LL chamber 12A) having an opening in one direction, a gate valve 12B for opening and closing the opening of the LL chamber 12A, and an LL chamber 12A. And a purge gas supply system (not shown) connected to.

  2 and 3, the LL chamber 12A is a vacuum tank connected to an exhaust system such as a vacuum pump P or a pressure adjustment valve. The LL unit 12 adjusts the internal pressure of the LL chamber 12A to atmospheric pressure and opens the gate valve 12B when executing the loading process or transfer process of the substrate S between the LL chamber 12A and the FOUP opener 16. The LL chamber 12A and the FOUP opener 16 are communicated to enable the loading process and the transfer process of the substrate S. The LL unit 12 adjusts the internal pressure of the LL chamber 12A to a predetermined transfer pressure by closing the gate valve 12B when loading and unloading the substrate S between the LL chamber 12A and the transfer unit 11. It is possible to process the transport.

  The FOUP opener 16 has a known FOUP 16F and a transfer robot 16R. The FOUP 16F transferred from the outside (for example, a substrate stocker) is opened, and the substrate S before the surface treatment is transferred to the substrate processing apparatus 10. To do. The FOUP opener 16 accommodates the substrate S after the surface treatment transferred from the substrate processing apparatus 10 in the FOUP 16F and transfers it to the outside.

  As the substrate S, for example, a silicon substrate, a glass substrate, or a ceramic substrate can be used, and the substrate S can be heated to be subjected to chemical treatment (hereinafter simply referred to as surface treatment) on the surface of the substrate S. If it is good.

  The purge gas supply system is connected to a purge gas line (not shown), and when purge processing is executed, the purge gas supplied from the purge gas line is adjusted to a predetermined flow rate and supplied into the LL chamber 12A. As the purge gas, for example, nitrogen, argon, helium, or xenon can be used, and two or more of these may be selected and mixed.

  In FIG. 1, an etching unit 13 is connected to a covered cylindrical etching chamber 13A, a reaction gas supply system (not shown) connected to the etching chamber 13A, a radical supply system (not shown) connected to the etching chamber 13A, and a radical supply system. And a microwave source (not shown).

  2 and 3, the etching chamber 13A is a vacuum tank connected to an exhaust system such as a vacuum pump P and a pressure adjustment valve. When carrying in and carrying out the substrate S between the etching chamber 13A and the transport unit 11, the etching unit 13 adjusts the internal pressure of the etching chamber 13A to a predetermined transport pressure to enable the transport process of the substrate S. In addition, when performing the etching process on the substrate S, the etching unit 13 adjusts the internal pressure of the etching chamber 13A to a predetermined etching pressure to enable the etching process.

  The reaction gas supply system is connected to a reaction gas line (not shown), and when the substrate S is etched, the reaction gas supplied from the reaction gas line is adjusted to a predetermined flow rate and supplied into the etching chamber 13A. The reaction gas supply system is connected to a purge gas line (not shown), and when the purge process is executed, the purge gas supplied from the purge gas line is adjusted to a predetermined flow rate and supplied into the etching chamber 13A.

When a natural oxide film (silicon oxide film) is etched as a surface treatment, a fluoride gas can be used as a reaction gas. As the fluoride gas, one having no carbon and oxygen is preferably used. For example, nitrogen trifluoride (NF ₃ ) can be used. In addition, one kind of reaction gas may be used alone, or two or more kinds of reaction gases may be mixed and used. Further, the reaction gas may be mixed with a carrier gas such as nitrogen, argon or helium and introduced into the etching chamber 13A.

  The radical supply system is connected to a radical generation gas line (not shown), and when the etching process of the substrate S is executed, the radical generation gas supplied from the radical generation gas line is adjusted to a predetermined flow rate and supplied into the etching chamber 13A. To do. Further, the radical supply system is connected to a carrier gas line (not shown), and when performing the etching process of the substrate S, the carrier gas supplied from the carrier gas line is adjusted to a predetermined flow rate and is brought into the etching chamber 13A together with the radical generation gas. To supply, thereby stabilizing the supply state of the radical-generating gas.

  When the natural oxide film is etched as the surface treatment, the radical generating gas may be any gas that generates hydrogen radicals when excited, and for example, ammonia or hydrogen can be used. Moreover, radical generation gas may be used individually by 1 type, and may mix and use 2 or more types of gas. As the carrier gas, a chemically stable gas such as nitrogen, argon, helium or the like in the surface treatment reaction system can be used. Further, one kind of carrier gas may be used alone, or two or more kinds of gases may be mixed and used.

  The microwave source is connected to a radical supply system via a waveguide (not shown), and when performing an etching process on the substrate S, a microwave of a predetermined output is caused to travel along the waveguide, and one of the radical supply systems. Irradiate the part with microwaves. When the radical supply system supplies a radical generating gas, the radical generating gas is excited by receiving microwaves from a microwave source to generate reactive species (radical state gas: for example, hydrogen radicals). The radical state gas generated in the radical supply system is supplied to the etching chamber 13A together with a radical generation gas, a carrier gas, a by-product upon excitation, and the like.

In FIG. 1, the heating unit 14 includes a covered cylindrical heating chamber 14 </ b> A and a heater (not shown) adjacent to the outer wall of the heating chamber 14 </ b> A.
2 and 3, the heating chamber 14A is a vacuum chamber connected to an exhaust system such as a vacuum pump P and a pressure adjustment valve. When the heating unit 14 carries in and out the substrate S between the heating chamber 14A and the transport unit 11, the heating unit 14 adjusts the internal pressure of the heating chamber 14A to a predetermined transport pressure to enable the transport process of the substrate S. The heating unit 14 adjusts the internal pressure of the heating chamber 14 </ b> A to a predetermined heating pressure when performing the heating process of the substrate S. The heater is a heater that heats the inside of the heating chamber 14A, and when the heat treatment of the substrate S is executed, the temperature of the substrate S is increased by heating the internal space of the heating chamber 14A.

  In FIG. 1, the cooling unit 15 includes a covered cylindrical cooling chamber 15A, a cooling water supply system (not shown) connected to the cooling chamber 15A, and a cooling gas supply system (not shown) connected to the cooling chamber 15A.

  2 and 3, the cooling chamber 15A is a vacuum chamber connected to an exhaust system such as a vacuum pump P or a pressure adjusting valve. The cooling unit 15 adjusts the internal pressure of the cooling chamber 15 </ b> A to a predetermined transfer pressure and enables the transfer process of the substrate S when the substrate S is carried in and out between the cooling chamber 15 </ b> A and the transfer unit 11. When performing the cooling process of the substrate S, the cooling unit 15 adjusts the internal pressure of the cooling chamber 15A to a predetermined cooling pressure.

The cooling water supply system is a cooling system having a cooling line for circulating the cooling water, a heat exchanger for cooling the cooling water to a predetermined temperature, and the like. Cooling water is circulated through a cooling pipe (not shown) provided on the inner wall of the chamber 15A to cool the inner wall temperature of the cooling chamber 15A to a predetermined temperature.

  The cooling gas supply system is connected to a cooling gas line (not shown), and when cooling the substrate S, the cooling gas supplied from the cooling gas line is adjusted to a predetermined flow rate and supplied into the cooling chamber 15A. . The cooling gas from the cooling gas supply system exchanges heat between the inner wall of the cooling chamber 15A and the substrate S, thereby lowering the temperature of the substrate S to a predetermined temperature.

Next, the conveyance unit 11 will be described below. 4 and 5 are a perspective view and a plan view, respectively, showing the inside of the transport unit 11.
4 and 5, the transport unit 11 has a transport chamber 11A formed in a box shape, and a transport exhaust system 21 including a vacuum pump P, a pressure adjustment valve, and the like is connected to the transport chamber 11A. Yes. The transport exhaust system 21 has an exhaust port 21a on one surface of the transport chamber 11A, closer to the etching position 13P than the LL position 12P, and closer to the heating position 14P than the LL position 12P. The gas inside the transfer chamber 11A is exhausted from the exhaust port 21a. As a result, the transfer unit 11 forms a gas flow from the LL position 12P toward the etching position 13P and a gas flow from the LL position 12P toward the heating position 14P, respectively, inside the transfer chamber 11A.

  When the transport unit 11 carries the substrate S between the LL unit 12, the etching unit 13, the heating unit 14, the cooling unit 15, and the transport unit 11, the internal pressure of the transport chamber 11 </ b> A is set to a predetermined transport pressure. Adjustment is made to enable the transfer processing of the substrate S.

  Inside the transfer chamber 11 </ b> A, a transfer stage 22, a shielding plate 23 as a partition fixed to the transfer stage 22, and four boats 24 detachably mounted on the transfer stage 22 are disposed. . In addition, a purge port as a purge mechanism (not shown) is provided in the vicinity of the central axis A inside the transfer chamber 11A, and a pair of cooling ports (not shown) as cooling mechanisms are provided in the vicinity of the upper surface 11s. It is installed.

  A rotation motor MR indicated by a broken line in FIG. 5, a lifting motor (not shown), and a boat motor (not shown) are fixed in the lower part of the transfer chamber 11A. The rotation motor MR has a drive shaft disposed on the central axis A and extending along the central axis A. The boat motors are disposed immediately below the LL position 12P, the etching position 13P, the heating position 14P, and the cooling position 15P, respectively.

  The transfer stage 22 is connected to the drive shaft of the rotation motor MR and rotates about the central axis A by receiving the drive force of the rotation motor MR. The transfer stage 22 is connected to the drive shaft of the lift motor and moves up and down in the vertical direction by receiving the drive force of the lift motor.

  On the upper surface of the transfer stage 22 (hereinafter simply referred to as a mounting surface 22s), a shielding plate 23 formed in a cross shape when viewed from the vertical direction is formed. Spaces surrounded by the mounting surface 22s, the inner surface of the transfer chamber 11A, and the shielding plate 23 are referred to as boat spaces BS, respectively. The shielding plate 23 of the present embodiment forms four boat spaces BS in the internal space of the transfer chamber 11A.

  When the transport stage 22 rotates about the central axis A, the four boat spaces BS rotate along the circumferential direction of the transport stage 22 (virtual circle C). Thereby, the conveyance stage 22 conveys each boat space BS in order under the LL position 12P, the etching position 13P, the heating position 14P, and the cooling position 15P, respectively.

The four boats 24 are respectively arranged on the mounting surface 22s of each boat space BS. When the transfer stage 22 rotates, the four boats 24 rotate along the circumferential direction of the transfer stage 22 together with the four boat spaces BS, so that the LL position 12P, the etching position 13P, the heating position 14P, and the cooling position. Moves directly under 15P.

  Each of the four boats 24 has a support bar 24a extending in the vertical direction, and a plurality of guide grooves extending in the horizontal direction are arranged along the vertical direction at predetermined intervals on the support bar 24a. When loading a plurality of substrates S into each slot, the four boats 24 arrange the main surface of each substrate S horizontally and separate adjacent substrates S by a predetermined interval in the vertical direction. Each of the four boats 24 arranges the center of each substrate S directly below the virtual circle C when loading a plurality of substrates S into each slot. In the present embodiment, a group of substrates S loaded in one boat 24 is referred to as a substrate group.

  When the transfer stage 22 rotates, the four boats 24 rotate the center of the substrate group along the virtual circle C, respectively, and the centers of the substrate group are set to the LL position 12P, the etching position 13P, and the heating position 14P. Then, it is conveyed directly under the cooling position 15P. Further, when the transfer stage 22 is rotated, the four boats 24 are located immediately below the LL position 12P, the etching position 13P, the heating position 14P, and the cooling position 15P at the same timing with respect to the centers of the four substrate groups. To place.

  When the centers of the four substrate groups are respectively located immediately below the LL position 12P, the etching position 13P, the heating position 14P, and the cooling position 15P, the transfer stage 22 receives the driving force of the lifting motor and drives the four boats 24. Move up and down in the vertical direction. Accordingly, the transfer stage 22 carries the four boats 24 into and out of the LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15 at the same timing, and the four substrate groups are respectively transferred to the LL chamber 12A. Into and out of the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A. At this time, the transfer stage 22 at the uppermost position presses the bottoms of the boat 24 against the bottoms of the LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15. Between the transport unit 11 and the etching unit 13, between the transport unit 11 and the heating unit 14, and between the transport unit 11 and the cooling unit 15.

  When the centers of the four substrate groups are located immediately below the LL position 12P, the etching position 13P, the heating position 14P, and the cooling position 15P, the four boats 24 are respectively connected to the drive shafts of the boat motor. Each of the four boats 24 receives the driving force of the boat motor and rotates the substrate group around the center of the substrate S. As a result, the four boats 24 make the environment of each substrate group uniform in the circumferential direction of the substrate S inside the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A, respectively.

  The substrate processing apparatus 10 drives the LL unit 12 to perform transfer processing of the substrate S when the four substrate groups are loaded into the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A, respectively. To do. Further, the substrate processing apparatus 10 drives the etching unit 13 to perform the etching process of the substrate S, and simultaneously drives the heating unit 14 to perform the heating process of the substrate S, and further drives the cooling unit 15. The substrate S is cooled. That is, the substrate processing apparatus 10 carries the four substrate groups into the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A at the same timing, and the LL chamber 12A, the etching chamber 13A, and the heating chamber 14A. And the cooling chamber 15A is driven at the same timing, and the processing steps of the substrate S are processed in parallel between the substrate groups.

Four purge ports (not shown) are arranged in the vicinity of the central axis A in each boat space BS, and supply purge gas from the vicinity of the central axis A toward each boat 24. Further, a cooling port (not shown) is a gas port fixed on the upper side of the transfer chamber 11A, and when the transfer stage 22 rotates, a cooling gas (for example, nitrogen) is supplied downward to a heating position. Cooling gas is sprayed toward the shielding plate 23 that has passed directly under 14P. Thereby, a cooling port cools the shielding board 23 heated with the board | substrate group after heat processing with a cooling gas.

(Substrate processing method)
Next, a substrate processing method using the substrate processing apparatus 10 will be described below. In the present embodiment, as an example of the substrate processing, a surface treatment for removing a natural oxide film (silicon oxide film) formed on the substrate S will be described. FIG. 6 is a flowchart showing each process of the surface treatment, and FIG. 7 is a time chart relating to each process of the substrate group loaded in each boat 24.

  In FIG. 6, the substrate processing apparatus 10 first executes a loading process for loading a plurality of substrates S from the FOUP opener 16 to the LL unit 12 (boat 24) (step S1). That is, the substrate processing apparatus 10 rotates the transfer stage 22 to place the four boats 24 at the LL position 12P, the etching position 13P, the heating position 14P, and the cooling position 15P, respectively. Next, the substrate processing apparatus 10 moves the transfer stage 22 and carries the four boats 24 into the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A, respectively. Then, the substrate processing apparatus 10 opens the gate valve 12B to open the LL unit 12, and loads the substrate group into the boat 24 (first boat) inside the LL chamber 12A.

  In the present embodiment, when the first boat is in the LL chamber 12A, the boats at the etching position 13P, the heating position 14P, and the cooling position 15P are referred to as a second boat, a third boat, and a fourth boat, respectively.

  When the loading process is completed, the substrate processing apparatus 10 performs a first transfer process for transferring the boat 24 in the LL chamber 12A to the etching chamber 13A (step S2). In other words, the substrate processing apparatus 10 is rotated by moving the transfer stage 22 downward so that the four boats 24 are moved to the LL position 12P, the etching position 13P, and the heating position 14P, respectively, so that the first boat is located at the etching position 13P. In the cooling position 15P. Next, the substrate processing apparatus 10 moves up the transfer stage 22 to carry the four boats into the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A, respectively. In the present embodiment, the time required for the first transport process is referred to as transport time Tr (see FIG. 7).

  Substrate processing apparatus 10 will perform the etching process for etching to a substrate group, if the 1st conveyance process is completed (Step S3). That is, the substrate processing apparatus 10 supplies the reaction gas from the reaction gas supply system to the substrate group of the first boat, and adsorbs the reaction gas on the surface of each substrate S. The substrate processing apparatus 10 adsorbs the reaction gas uniformly over the entire surface of each substrate S by driving the boat motor and rotating the substrate group for a predetermined adsorption time.

  When a predetermined adsorption time has elapsed, the substrate processing apparatus 10 drives the radical supply system and the microwave source to supply radical state gas to the substrate group of the first boat. The gas in the radical state reacts with the reaction gas adsorbed on the surface of the substrate S to generate an intermediate product, and the intermediate product on the surface of the substrate S reacts with the natural oxide film to produce a reaction product. Is generated. The substrate processing apparatus 10 drives the boat motor to rotate the substrate group for a predetermined reaction time, thereby advancing the etching reaction uniformly over the entire surface of each substrate S.

  When a predetermined reaction time has elapsed, the substrate processing apparatus 10 stops the radical supply system and the microwave source, and stops the introduction of the reaction gas and the gas in the radical state. The substrate processing apparatus 10 evacuates the reaction gas, the radical state gas, the reaction product, and the like from the inside of the etching chamber 13A by continuing the vacuum evacuation with the introduction of each gas stopped.

  The process time required for this etching process is a time set based on various tests and the like, and is referred to as a process time Tp (see FIG. 7) in the present embodiment. The process time Tp is the longest of the process times of the respective processing steps (etching step, heating step, cooling step, etc.) constituting the surface treatment. For example, when the process time of the etching process is the longest among the process times of the respective process steps constituting the surface treatment, the process time of the etching process is selected as the process time Tp.

  After completing the etching process, the substrate processing apparatus 10 executes a second transfer process for transferring the boat 24 in the etching chamber 13A to the heating chamber 14A (step S4). That is, the substrate processing apparatus 10 moves down the transfer stage 22 and rotates to move the four boats 24 to the LL position 12P, the etching position 13P, and the heating position 14P so that the first boat is located at the heating position 14P. In the cooling position 15P. Next, the substrate processing apparatus 10 moves up the transfer stage 22 to carry the four boats into the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A, respectively. In the second transport process, the transport time Tr is required as in the first transport process.

  At this time, the reaction gas and radical generating gas remaining around the substrate S enter the inside of the transfer chamber 11A as the substrate group moves downward. The reaction gas and radical generation gas entering the transfer chamber 11A are smoothly exhausted according to the gas flow formed by the purge port and the exhaust port 21a. Thereby, the vicinity of the LL position 12P can avoid contamination by the reaction gas and the radical generation gas.

Substrate processing apparatus 10 will perform the heating process for heating a substrate group, if the 2nd conveyance process is completed (Step S5). That is, the substrate processing apparatus 10 drives a heater (not shown) to raise the temperature of the substrate group in the heating chamber 14A to a predetermined heating temperature (for example, 130 ° C.). On the substrate surface at the heating temperature, the reaction product generated in the etching process is thermally decomposed and released from the substrate surface as ammonium silicofluoride ((NH ₄ ) ₂ SiF ₆ ) gas.

  The pyrolysis gas released from the surface of the substrate S is stagnated in the space between the substrates S or re-adsorbed on the surface of the substrate S because the interval between the slots is narrow. The substrate processing apparatus 10 introduces a purge gas into the etching chamber 13A during the heating process, and sprays the purge gas over the entire surface of each substrate S. Reaction products and pyrolysis gas remaining around each substrate S are swept away by the purge gas and exhausted together with the purge gas. The substrate processing apparatus 10 drives the boat motor while introducing the purge gas to make the purge effect on the substrate surface uniform.

  The process time required for this heating process is set to the process time Tp as in the etching process. For example, when the process time of the etching process is the longest among the process times of each processing process constituting the surface treatment, the process time of the etching process is selected as the process time Tp, and in the heating process, the process of the etching process is selected. A heating time and a heating rate corresponding to the time are set.

After finishing the heating process, the substrate processing apparatus 10 executes a third transfer process for transferring the first boat in the heating chamber 14A to the cooling chamber 15A (step S6). In other words, the substrate processing apparatus 10 moves down the transfer stage 22 and rotates, so that the first boat is positioned at the cooling position 15P. In the cooling position 15P. Next, the substrate processing apparatus 10 moves up the transfer stage 22 to carry the four boats into the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A, respectively. In this third transport step, the transport time Tr is the same as in each transport step.
Cost.

  At this time, reaction products and pyrolysis gas that remain in the vicinity of the substrate S enter the inside of the transfer chamber 11A as the substrate group moves downward. Reaction products and pyrolysis gas that enter the transfer chamber 11A are smoothly exhausted according to the gas flow formed by the purge port and the exhaust port 21a. Thereby, the vicinity of the LL position 12P can avoid contamination by reaction products and pyrolysis gas.

  The substrate processing apparatus 10 will perform the cooling process for cooling a board | substrate group, after complete | finishing a 3rd conveyance process (step S7). That is, the substrate processing apparatus 10 drives the cooling water supply system and the cooling gas supply system to lower the temperature of the substrate group in the cooling chamber 15A to a predetermined temperature (for example, 25 ° C.). The substrate processing apparatus 10 drives the boat motor while introducing the cooling gas to make the cooling rate in the substrate plane uniform.

  The process time required for this cooling process is set to the process time Tp as in the etching process. For example, when the process time of the etching process is the longest among the process times of each processing process constituting the surface treatment, the process time of the etching process is selected as the process time Tp, and the process of the etching process is selected in the cooling process. A cooling time and a cooling rate corresponding to the time are set.

  After completing the cooling process, the substrate processing apparatus 10 executes a fourth transfer process for transferring the first boat in the cooling chamber 15A to the LL chamber 12A (step S8). In other words, the substrate processing apparatus 10 is rotated by moving the transfer stage 22 downward, and the four boats 24 are moved to the LL position 12P, the etching position 13P, and the heating position 14P so that the first boat is positioned at the LL position 12P. In the cooling position 15P. Next, the substrate processing apparatus 10 moves up the transfer stage 22 to carry the four boats into the LL chamber 12A, the etching chamber 13A, the heating chamber 14A, and the cooling chamber 15A, respectively. In the fourth transport process, the transport time Tr is required as in each transport process.

  After completing the fourth transport process, the substrate processing apparatus 10 executes a transfer process for transferring the substrate group in the LL chamber 12A to the FOUP opener 16 (step S9). That is, the substrate processing apparatus 10 transfers the substrate group in the LL chamber 12A to the FOUP opener 16 by opening the gate valve 12B and opening the LL unit 12. At this time, the substrate processing apparatus 10 continues to introduce the purge gas from the purge gas supply system into the LL chamber 12A. Each part such as the surface of the substrate S in contact with the purge gas, the back surface of the substrate S, the inner wall of the LL chamber 12A, and the like reliably suppress the residue of reaction products and pyrolysis gas, thereby ensuring contamination of the substrate group after the surface treatment. To avoid.

  The process time required for the loading process and the transfer process is set to the process time Tp as in the etching process, the heating process, and the cooling process. For example, when the etching process time is the longest among the processing times of each processing process constituting the surface treatment, the etching process time is set as the process time Tp. In the loading and transfer processes, etching is performed. A loading time and a loading speed, or a transfer time and a transfer speed corresponding to the process time of the process are set. In the present embodiment, the time required for the surface treatment (steps S1 to S9) is referred to as a processing cycle T.

  In FIG. 7, when the substrate processing apparatus 10 performs the etching process (step S3) on the substrate group of the first boat, the substrate processing apparatus 10 performs the loading process (step S1) on the second port in the LL chamber 12A. Then, the surface treatment for the substrate group of the second port is started.

In addition, when the substrate processing apparatus 10 performs the heating process (step S5) on the substrate group of the first boat, the substrate processing apparatus 10 performs the loading process on the third port in the LL chamber 12A, The surface treatment for the substrate group is started. Further, when the substrate processing apparatus 10 performs the cooling process (step S7) on the substrate group of the first boat, the substrate processing apparatus 10 performs the loading process on the fourth port in the LL chamber 12A, Surface treatment for the substrate group is started.

  The integration time of the loading process and the transfer process, the process time of the etching process, the process time of the heating process, and the process time of the cooling process are set to a common process time Tp. Therefore, the substrate groups of the first port to the fourth port can synchronize the subsequent transport process without requiring a waiting time. Therefore, the substrate processing apparatus 10 can process the loading process, the etching process, the heating process, the cooling process, and the transfer process in parallel between the different boats 24.

  Further, the substrate processing apparatus 10 executes the loading process, the etching process, the heating process, the cooling process, and the transfer process on the virtual circle C, and sets the integration time of the loading process and the transfer process to the process time Tp. To do. Therefore, when the substrate processing apparatus 10 finishes the transfer process of one boat 24, the other boat 24 is in the middle of another processing process, and therefore the substrate processing apparatus 10 continues to execute the loading process related to the one boat 24. Can do.

  That is, as shown in FIG. 7, in one boat 24, for example, the first boat, the transfer process (step S9) in the first cycle and the loading process (step S1) in the second cycle are performed at the same timing. Executed. And the transfer process of the nth period (n is an integer greater than or equal to 1) with respect to one boat and the loading process of the (n + 1) th period are performed at the same timing. Therefore, the substrate processing apparatus 10 can perform the transfer process and the loading process in parallel between different substrate groups processed by one boat 24.

According to the above embodiment, the following effects can be obtained.
(1) In the above embodiment, the substrate processing apparatus 10 equally distributes four boats 24 along the circumferential direction of the transfer stage 22, and above each boat 24, the LL chamber 12 </ b> A, the etching chamber 13 </ b> A, and the cooling chamber. 15A. Then, the substrate processing apparatus 10 repeats the upward movement and rotation of the transfer stage 22 to load and unload the substrate group in all the boats 24 into the processing chamber immediately above at the same timing, and to each boat 24. Are transferred in the order of the LL chamber 12A, the etching chamber 13A, and the cooling chamber 15A.

  Therefore, in the substrate processing apparatus 10, when the substrate group of the first port is carried into one processing chamber, the substrate groups of the second boat, the third boat, and the fourth boat are respectively transferred to different processing chambers. . Therefore, the substrate processing apparatus 10 can cool the substrate group of the subsequent second boat at the timing of transferring and loading the substrate group of the preceding first boat, and can add to the substrate group of the third boat. Surface treatment can be performed, and the substrate group of the fourth boat can be etched. As a result, the substrate processing apparatus 10 processes each surface processing step, that is, a substrate group transfer and loading step, an etching step, a heating step, and a cooling step in parallel between different boats 24. be able to. Therefore, the substrate processing apparatus can offset the time required for transferring and loading the substrate group by the etching time, the heating time, and the cooling time, thereby improving the substrate processing throughput.

  (2) Moreover, the substrate processing apparatus 10 arrange | positions the cooling chamber 15A in the back | latter stage of the heating chamber 14A, and performs the cooling process continuous after a heat processing independently in the cooling chamber 15A in parallel with a heat processing. Therefore, the substrate processing apparatus 10 can perform the cooling according to the heating condition without impairing the throughput regardless of the change in the heating temperature or the heating rate of the substrate S.

(3) In the above embodiment, the substrate processing apparatus 10 arranges the processing chambers on the virtual circle C according to the order of the processing steps. Therefore, the substrate processing apparatus 10 can execute all the processing steps for one substrate group only by rotating the transfer stage 22 once. In addition, the last process to the preceding substrate group, that is, the transfer process, and the first process to the subsequent substrate group, that is, the loading process, are executed at the same timing for the boat 24 in the LL chamber 12A. Can do. Therefore, the substrate processing apparatus 10 can process the transfer process and the loading process in parallel between different substrate groups processed using one boat 24. Therefore, the substrate processing apparatus 10 can further improve the throughput of the substrate processing.

  (4) In the above embodiment, the substrate processing apparatus 10 provides the shielding plate 23 on the transfer stage 22, and divides the internal space of the transfer chamber 11 </ b> A into a boat space BS for each boat 24. Therefore, in the substrate processing apparatus 10, crosstalk between the boat spaces BS, that is, crosstalk between the substrate groups is suppressed by the shielding plate 23. Therefore, the substrate processing apparatus 10 can shorten the purge time for eliminating the contamination due to the crosstalk, as much as the crosstalk between the substrate groups is suppressed. Therefore, the substrate processing apparatus 10 can further improve the throughput of the surface treatment.

  (5) In the above embodiment, the substrate processing apparatus 10 is provided with the exhaust port 21a in the transfer chamber 11A, and the gas flow from the LL position 12P to the etching position 13P and the gas flow from the LL position 12P to the heating position 14P. Are formed inside the transfer chamber 11A. Therefore, the substrate processing apparatus 10 exhausts the gas flowing out from the etching chamber 13A or the heating chamber 14A in a direction away from the LL chamber. Therefore, the substrate processing apparatus 10 can suppress gas contamination accompanying the surface treatment on the substrate group after the surface treatment and the substrate group before the surface treatment. Therefore, the substrate processing apparatus 10 can shorten the purge time for cleaning the substrate group after the surface treatment and the purge time for cleaning the substrate group before the surface treatment, thereby further improving the throughput. Can do.

  (6) In the above embodiment, the substrate processing apparatus 10 provides a purge port for each boat space BS in the transfer stage 22 and forms a purge gas flow in the transfer stage 22 for each boat space BS. Therefore, in the substrate processing apparatus, the gas flowing out from the etching chamber 13A or the heating chamber 14A is exhausted in a direction away from the LL chamber 12A. Therefore, the substrate processing apparatus 10 can further suppress the contamination of the substrate accompanying the surface treatment with respect to the substrate group after the surface treatment and the substrate group before the surface treatment.

  (7) In the above embodiment, the substrate processing apparatus 10 provides a cooling port in the rotation direction of the heating chamber 14 </ b> A and sprays the cooling gas onto the shielding plate 23. Therefore, the substrate processing apparatus 10 can suppress deformation and alteration of the shielding plate 23 due to heat radiation of the heated substrate group, and can more reliably suppress crosstalk between the boat spaces BS. As a result, the substrate processing apparatus 10 can improve the throughput more reliably.

In addition, you may implement the said embodiment in the following aspects.
In the above embodiment, the substrate processing apparatus 10 cools the heated substrate S in the cooling chamber 15A. For example, the substrate processing apparatus 10 may be configured such that the heated substrate S is cooled in the transfer chamber 11A or the LL chamber 12A and the cooling chamber 15A is not mounted. That is, the present invention is not limited to the number of other processing chambers as long as at least the LL unit 12, the etching unit 13, and the heating unit 14 are mounted on the transport unit 11.

  In the above embodiment, the LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15 have independent exhaust systems. However, the present invention is not limited to this, and a desired exhaust system is used in common or a transport unit 11 may be used in common with the exhaust system. That is, the present invention is not limited to the configuration of the exhaust system of each processing chamber.

  In the above embodiment, the substrate processing apparatus 10 arranges the LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15 on the virtual circle C, and places the four boats 24 along the virtual circle C. Rotate. Not limited to this, the substrate processing apparatus 10 has a configuration in which the LL unit 12, the etching unit 13, the heating unit 14, and the cooling unit 15 are arranged on a straight line, and a plurality of boats 24 reciprocate along the straight line. There may be.

  In the above embodiment, the substrate processing apparatus 10 performs a natural oxide film removal process as the surface treatment of the substrate S. Not limited to this, the substrate processing apparatus 10 may be configured to execute various film forming processes as the surface treatment of the substrate S. In other words, the substrate processing apparatus of the present invention may be configured to have a step of exposing the substrate S to a reactive gas and a step of heating the substrate S as the surface treatment of the substrate S.

The perspective view which shows a substrate processing apparatus. The top view which shows a substrate processing apparatus. The side view which shows a substrate processing apparatus. The perspective view which shows the inside of a conveyance chamber. The top view which shows the inside of a conveyance chamber. The flowchart which shows each process of a surface treatment method. The time chart which shows each process of a surface treatment method.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Substrate processing apparatus, 11 ... Transfer part, 11A ... Transfer chamber which comprises a processing chamber, 12 ... LL part, 12A ... LL chamber as a loading chamber which comprises a processing chamber, 13 ... Etching part, 13A ... Processing chamber Etching chamber as reaction chamber, 14 heating unit, 14A heating chamber constituting processing chamber, 15 cooling unit, 15A cooling chamber constituting processing chamber, 22 transfer stage, 23 shielding as partition wall Plate, 24 ... Boat, 25 ... Purge port as purge mechanism, 26 ... Cooling port as cooling mechanism.

Claims (8)

A substrate processing apparatus for performing a surface treatment on a substrate group consisting of a plurality of substrates,
A plurality of boats arranged at predetermined intervals;
A plurality of processing chambers arranged in one direction of each boat;
A transport unit that carries each boat into and out of each of the plurality of processing chambers;
The plurality of processing chambers are
A loading chamber for loading the board into the boat or transferring a group of substrates in the boat to the outside and loading a different group of substrates into the boat;
A reaction chamber for exposing a group of substrates in the boat to a reaction gas;
A heating chamber for heating a group of substrates in the boat;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The plurality of processing chambers include a cooling chamber for cooling a substrate group in the boat. The substrate processing apparatus according to claim 2,
The transport unit is
Each of the boats has a stage that rotates by mounting the four boats on one surface, and repeats the normal direction of the surface with respect to the four boats and the conveyance in the rotation direction of the stage. In and out of each of the four processing chambers in the order along the rotation direction,
Each of the four processing chambers is arranged in the rotation direction according to the order of processing steps. The substrate processing apparatus according to claim 3, wherein
A transfer chamber that is connected to all the processing chambers and accommodates the stage;
A partition wall provided on the stage and partitioning the internal space of the transfer chamber for each boat and rotating together with the stage;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 4,
The transfer chamber is
A substrate processing apparatus comprising an exhaust system for exhausting the internal space at a position closer to the reaction chamber than the loading chamber and closer to the heating chamber than the loading chamber. The substrate processing apparatus according to claim 5,
The transfer chamber is
A substrate processing apparatus having a purge mechanism for purging the spaces defined by the partition walls. A substrate processing apparatus according to any one of claims 4 to 6,
The transfer chamber is
A substrate processing apparatus, comprising: a cooling mechanism that is provided in the rotation direction of the heating chamber and that cools the partition by blowing gas onto the partition. A substrate processing method of loading a substrate group consisting of a plurality of substrates into each of a plurality of boats and performing a surface treatment on each of the substrate groups,
Loading the boat into a loading chamber, filling the boat with a substrate or transferring a group of substrates in the boat from the loading chamber to the outside, and loading different external substrate groups into the boat;
Carrying the boat into a reaction chamber and exposing a group of substrates in the boat to a reaction gas;
Carrying the boat into a heating chamber and heating a group of substrates in the boat;
Carrying the boat into a cooling chamber and cooling a group of substrates in the boat;
The process time of each process is made substantially the same, and the different boats are loaded and unloaded at substantially the same timing, and each of the plurality of boats is loaded into the loading chamber, the reaction chamber, and heated. A substrate processing method comprising carrying in and out in order of a chamber and a cooling chamber.

Images