JP2009169213A - Method for manufacturing wire grid polarizing element and method for manufacturing liquid crystal device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a wire grid polarizing element in which a production process is simplified, and also to provide a method for manufacturing a liquid crystal device. <P>SOLUTION: The method for manufacturing a wire grid polarizing element includes: a wire material layer forming step of forming a wire material layer containing a constituent material of the wire on a substrate; a resist layer forming step of forming a chemically amplified resist layer on the wire material layer, the resist layer containing an oxygen generator having sensitivity to a first wavelength and an oxygen generator having sensitivity to a second wavelength longer than the first wavelength; an interference exposure step of subjecting a first region of the resist layer to interference exposure to light at the first wavelength; an imaging exposure step of subjecting a second region of the resist layer to image exposure to light at the second wavelength; a developing and stripping step of developing the resist layer to partially strip after the above interference exposure step and the imaging exposure step; and an etching step of etching a portion of the wire material layer exposed by the developing and stripping step. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a wire grid polarizing element and a method for manufacturing a liquid crystal device.

As one of optical elements having a polarization separation function, a wire grid polarization element is known. The wire grid polarization element is an element having a number of fine conductor wires arranged at a pitch shorter than the wavelength of light, and reflects a component (TE) having a polarization axis parallel to the fine wire in incident light. It has the property of transmitting a component (TM) having a polarization axis perpendicular to the fine wire. The wire grid polarizing element is attached to a transflective liquid crystal device having a transmissive display area that transmits light through one pixel area and a reflective display area that reflects light for display. When attached to a transflective liquid crystal device, a region where a wire grid (polarization separation unit) is formed is a reflective display region.

When manufacturing a wire grid polarization element, an aluminum layer as a wire material is formed on a substrate, the entire layer is patterned in a grid shape, and then the grid-like aluminum layer is patterned into the shape of a polarization separation section. To do.

Specifically, first, a resist is applied to the aluminum layer, and the resist is subjected to interference exposure with a KrF laser having a wavelength of 248 nm or an Ar laser having a wavelength of about 351 nm, and then the resist is developed. After development, a resist pattern is formed in a region corresponding to the shape of the wire. By etching from the resist pattern, a grid-like wire layer is formed over the entire aluminum layer.

After forming the wire layer, the wire layer is patterned into the shape of the polarization separation portion. Since the shape pattern of the polarization separation portion has a pitch larger than that of the wire shape pattern, exposure can be performed with exposure light having a resolution higher than that of the exposure light used when forming the grid pattern. For example, a resist is applied on the wire layer, and the resist is exposed by g-line having a wavelength of about 436 nm or i-line having a wavelength of about 365 nm. After developing the exposed resist, a resist pattern is formed in a region corresponding to the shape of the polarization separation portion. By etching from above the resist pattern, the wire is patterned on the polarization separation portion.
JP 2002-372749 A

However, in the manufacturing process of the wire grid polarizing element described above, it is necessary to apply a resist for interference exposure and a resist for imaging exposure, and it is necessary to perform the resist layer forming step twice, which makes the manufacturing process complicated. turn into.
In view of the circumstances as described above, an object of the present invention is to provide a method for manufacturing a wire grid polarizing element and a method for manufacturing a liquid crystal device, which can simplify the manufacturing process.

In order to achieve the above object, a method for manufacturing a wire grid polarizing element according to the present invention is a method for manufacturing a wire grid polarizing element having a polarization separating portion on a substrate, in which a plurality of wires are provided in a grid shape. A wire material layer forming step for forming a wire material layer including a wire constituent material on the substrate, an acid generator having sensitivity to a first wavelength, and an acid generation having sensitivity to a second wavelength greater than the first wavelength. A resist layer forming step of forming a chemically amplified resist layer containing an agent on the wire material layer, an interference exposure step of performing interference exposure on the first region of the resist layer with light of the first wavelength, and the resist layer After performing the imaging exposure process of image-exposing the second region of the second region with the light of the second wavelength, the interference exposure process and the imaging exposure process, the resist layer is developed. A developing peeling step of partially exfoliated, characterized in that it comprises an etching step of etching the portions exposed by the developing peeling step out of the wire material layer.

According to the present invention, after forming a wire material layer on a substrate, a resist containing an acid generator having sensitivity to a first wavelength and an acid generator having sensitivity to a second wavelength greater than the first wavelength. Since it was applied on the wire material layer, the resist layer applied in this resist layer forming step has sensitivity to both the light of the first wavelength and the light of the second wavelength. For this reason, it is not necessary to apply the resist having sensitivity to the light having the first wavelength and the resist having sensitivity to the second wavelength in two steps, and only one resist layer forming step is required. Thereby, a manufacturing process can be simplified.

In the method for manufacturing the wire grid polarizing element, the first region is a region where the plurality of wires are formed, and the second region is a region where the plurality of wires are not formed. .
According to the present invention, the first region is a region where a plurality of wires are formed, and the second region is a region where no wire is formed. It can expose by a resist layer formation process.

In the method for manufacturing the wire grid polarizing element, the second region is a region wider than the first region.
According to the present invention, since the second area is wider than the first area, even two patterns having different area widths can be exposed by one resist layer forming step. .

In the method of manufacturing the wire grid polarizing element, a plurality of step portions of the diffractive optical element having a light scattering function are provided in a region of the base that overlaps the second region in plan view. And
According to the present invention, a plurality of step portions of the diffractive optical element having a light scattering function are provided in a region on the substrate that overlaps the second region in plan view. Thus, when forming a wire grid polarizing element having a diffractive optical element, the manufacturing process can be simplified even when a resist layer having a step is formed on the step.

In the manufacturing method of the wire grid polarizing element, the light of the first wavelength is 266 nm.
The light of the second wavelength is g-line or i-line.
According to the present invention, since the first wavelength light is ultraviolet light with a wavelength of 266 nm and the second wavelength light is g-line or i-line, a general-purpose exposure apparatus is used for the imaging exposure process. Easy exposure.

A method for manufacturing a liquid crystal device according to the present invention is a method for manufacturing a liquid crystal device provided with a polarizing plate, wherein the polarizing plate is manufactured using the method for manufacturing a wire grid polarizing element.

According to the present invention, since the polarizing plate of the liquid crystal device is manufactured using the method for manufacturing the wire grid polarizing element, the manufacturing process can be simplified and the liquid crystal device is manufactured at a low manufacturing cost. be able to.

Embodiments of the present invention will be described below with reference to the drawings. In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

[First Embodiment]
A first embodiment of the present invention will be described.
Fig.1 (a) is a perspective view of the wire grid polarizing element 1 which concerns on this embodiment, FIG.
a) is a cross-sectional view of the wire grid polarizing element 1 of FIG. The wire grid polarizing element 1 has a base 6 made of glass or the like, a diffraction function layer 4 disposed on the base 6, and a grid 2 disposed on the diffraction function layer 4. FIG. 1 (a)
A part of the wire grid polarizing element 1 is enlarged, and the same structure is continuous over a wider range of the XY plane.

FIG. 1B is a perspective view showing the shape of the diffraction function layer 4, and is a state in which the grid 2 is removed from FIG. The diffraction function layer 4 is made of a polymer having translucency with respect to incident light, and a large number of irregularities are formed on one surface. The one surface has a plurality of first regions 4.
a and a plurality of second regions 4b. Here, the second region 4b is different from the first region 4a in height from the other surface 4c of the diffraction function layer 4 (that is, the surface of the diffraction function layer 4 in contact with the substrate 6). In the present embodiment, the second region 4b is higher than the first region 4a. A step 8 is provided at the boundary between the first region 4a and the second region 4b. The height g (FIG. 2A) of the stepped portion 8 is set to be smaller than the wavelength of the incident light. Further, the step portion 8 is substantially perpendicular to the first region 4a and the second region 4b. That is, the cross section of the diffraction function layer 4 has a substantially rectangular shape (rectangular wave shape).

The arrangement of the first region 4a and the second region 4b is random (irregular), and its shape is
It is a square or a shape obtained by irregularly connecting the squares vertically and horizontally. Here, the minimum dimension (that is, the length of one side of the square) δ (FIG. 2A) of the first region 4a and the second region 4b is longer than the wavelength λ of the incident light and is used for visible light. In this case, it can be set to 2 μm, for example. The first region 4a and the second region 4b are planes parallel to each other.

On one surface of the diffraction function layer 4 (that is, on the first region 4a and the second region 4b),
Actually, the grid 2 is formed as shown in FIG. The grid 2 is composed of a number of fine aluminum wires parallel to each other. This fine wire is in the first region 4
a and the second region 4b are arranged in parallel with one of the outer straight lines. The arrangement pitch d of the fine wires (FIG. 2A) is shorter than the wavelength λ of the incident light, and can be set to 140 nm, for example. In FIG. 1A, for convenience of explanation, the number of fine wires is smaller than the actual number.

FIG. 2B is an enlarged cross-sectional view of a part of FIG. As shown in this figure, the grid 2 is sealed with a sealing layer 3 made of SiO2 or SiN, and the space surrounded by the diffraction function layer 4, the grid 2, and the sealing layer 3 is in a vacuum state. It has become.

An adhesion layer made of a material different from both the diffraction function layer 4 and the grid 2 may be formed between the diffraction function layer 4 and the grid 2. At this time, the adhesion strength between the diffraction function layer 4 and the adhesion layer and the adhesion strength between the grid 2 and the adhesion layer are preferably higher than the adhesion strength between the diffraction function layer 4 and the grid 2. With this configuration, the diffraction function layer 4 and the grid 2
Can be improved by interposing the adhesion layer. As a material for the adhesion layer, for example, a dielectric thin film such as SiO 2 can be used.

FIG. 3 is a schematic diagram for explaining the function of the wire grid polarizing element 1. Among these, FIG. 3A is a diagram showing the function of the diffraction function layer 4, and FIG. 3B is a diagram showing the function of the grid 2.

As shown in FIG. 3B, in the incident light 80 on the grid 2, the component p having a polarization axis parallel to the fine wire is reflected by the grid 2, and the component s having a polarization axis perpendicular to the fine wire is the grid. 2 is transmitted. That is, the wire grid polarizing element 1 having the grid 2 has a polarization separation function, and can separate the incident light 80 into reflected light 80r and transmitted light 80t having different polarization states.

In the wire grid polarizing element 1 shown in FIG. 3A, the black region is the first region 4a.
And the white area corresponds to the second area 4b. A plurality of irregularities formed by the first region 4a and the second region 4b are distributed on one surface of the diffraction function layer 4 (FIG. 1B).
)). The diffraction function layer 4 can diffract the incident light 80 by this uneven distribution and diffuse it in a direction different from the incident direction as shown in FIG. More specifically, according to the action of the diffractive function layer 4, both the reflected light 80 r reflected by the grid 2 and the transmitted light 80 t transmitted through the grid 2 can be diffused. As will be described later, the diffusion characteristics of the reflected light 80r and the transmitted light 80t can be adjusted.

When the wire grid polarizing element 1 is applied to a transmission type device, the transmitted light characteristic is important. 4A and 4B are graphs showing the transmitted light characteristics of the wire grid polarizing element 1, wherein FIG. 4A shows the wavelength dependence of transmittance and FIG. 4B shows the wavelength dependence of contrast. Here, the contrast is defined by the ratio of the intensity of the component s (FIG. 3B) to the intensity of the component p in the light transmitted through the wire grid polarizing element 1. As can be seen from this figure, there is a trade-off relationship between transmittance and contrast. For example, when trying to increase the contrast,
The transmittance is slightly reduced.

The diffusion effect of the reflected light 80r and the diffusion effect of the transmitted light 80t shown in FIG. 3A can be controlled by changing the height g of the step portion 8 of the diffraction function layer 4. The incident light 80 is the diffraction function layer 4.
The height gr of the stepped portion 8 that maximizes the diffusion effect of the reflected light 80r is given by the following equation (1).
gr = (2m + 1) λ / 4n (1)
However, m is an integer greater than or equal to 0, (lambda) is the wavelength of the incident light 80, n is the refractive index of the surrounding medium of the wire grid polarizing element 1. FIG. On the other hand, the height gt of the stepped portion 8 that maximizes the diffusion effect of the transmitted light 80t is given by the following equation (2).
gt = (2m + 1) λ / 2 (N−1) (2)
Here, N is the refractive index of the diffraction function layer 4.

From the equations (1) and (2), the height gr of the stepped portion 8 at which the diffusion effect of the reflected light 80r is maximized,
It can be seen that the height gt of the stepped portion 8 that maximizes the diffusion effect of the transmitted light 80t is different from each other. Therefore, if the height of the stepped portion 8 of the diffraction function layer 4 is made equal to gr, the diffusion effect of the transmitted light 80t can be suppressed.

For example, when λ = 600 nm, for m = 0, gr = 100 nm from equation (1), and gt = 600 nm from equation (2). However, n = 1.5 and N = 1.5. Here, if the height g of the stepped portion 8 is 100 nm (height gr), the diffusion effect of the reflected light 80r by the diffraction function layer 4 can be maximized. At this time, the height g is 80t of transmitted light.
Therefore, the diffusion effect of the transmitted light 80t does not become large. Therefore, it is possible to diffuse the reflected light 80r over a wide range and suppress the diffusion of the transmitted light 80t while separating the incident light 80 into the reflected light 80r and the transmitted light 80t having different polarization states.

By the way, when gt ′ is an intermediate value that can be taken by gt in equation (2), gt ′ is gt ′ = (m + 1) λ / (N−1) (3)
Meet. If the height g of the stepped portion 8 of the diffraction function layer 4 is set to gt ′, the diffusion effect of the transmitted light 80t can be minimized. That is, by setting the height g of the stepped portion 8 to gt ′, the incident light 80 is separated into reflected light 80r and transmitted light 80t having different polarization states,
It is possible to diffuse the reflected light 80r and suppress the diffusion of the transmitted light 80t.

When the wire grid polarizing element 1 is applied to a specific display device, the first region 4a and the second region 4b of the diffraction function layer 4 may be disposed completely randomly over the entire range.
Instead of this, it is also possible to do the following. That is, a unit pattern in which a plurality of first regions 4a and a plurality of second regions 4b are arranged in a specific random distribution is created, and the plurality of unit patterns are repeatedly arranged. Here, the size of the unit pattern is arbitrary, but for example, it can be a square having a side of 400 μm. According to such a configuration, the photomask used for manufacturing the diffraction function layer 4 can also have a structure in which a mask pattern corresponding to the unit pattern is repeatedly arranged, and the photomask can be easily created. Thereby, it becomes possible to manufacture an optical element easily.

Further, as shown in FIG. 5, the unit patterns 1u adjacent to each other may be arranged so that the directions thereof are different from each other. In FIG. 5, an arrow in the unit pattern 1u indicates the direction of the unit pattern 1u. According to such an arrangement, the periodicity of the diffractive functional layer 4 can be kept low. As a result, the deviation in the diffusion direction caused by the repetition period of the unit pattern 1u can be eliminated, and coloring due to diffraction causes a practical problem. It can be relaxed to a lesser extent.

(Production method)
Then, the manufacturing method of a wire grid polarizing element is demonstrated using FIG.6 and FIG.7. FIG. 6 is a flowchart showing a manufacturing process of the wire grid polarizing element. FIG.
It is sectional drawing in the manufacturing process of a wire grid polarizing element.

First, the diffraction function layer 4 is formed on the substrate 6 (step S1). In this step, first, a thickness of 0.
A diffractive functional material layer 4L made of a polymer is laminated on a base 6 made of 7 mm glass by using a spin coat method or the like. Subsequently, by selectively exposing a region corresponding to the first region 4a in the diffraction function material layer 4L using a photomask, and then removing by wet development,
A distribution of the first region 4a and the second region 4b is formed on one surface of the diffraction function material layer 4L.
The difference in height between the first region 4a and the second region 4b, that is, the depth of the portion removed by development in the diffraction function material layer 4L is, for example, 100 nm. Also, the first region 4a and the second region
Etching is performed so as to be parallel to the region 4b. Thus, the diffraction function layer 4 is formed on the substrate 6. After the diffraction function layer 4 is formed, a thickness of 12 is formed on the underlayer 5 by sputtering or the like.
An aluminum film 2L is formed as a 0 nm conductive film (step S2: wire material layer forming step).
.

Next, an antireflection film (not shown) is formed on the aluminum film 2L by vacuum deposition, CVD, sputtering, or the like (step S3). As the antireflection film, for example, SiC or SiOxNy: H (x
Y is a composition ratio). Alternatively, ITO (Indium Tin Oxide) may be used.

When the antireflection film is formed, as shown in FIG. 7B, a resist layer R having a substantially flat surface on the antireflection film (shown on the aluminum film 2L in FIG. 7B) is formed. It forms by a spin coat method etc. (process S4: resist layer formation process). As the resist layer R, a resist is used in which a resin material is added with both an acid generator sensitive to light having a wavelength of 266 nm and an acid generator sensitive to a wavelength of 365 nm.

After forming the resist layer R, pre-baking is performed to remove the solvent component of the resist (step S5). After pre-baking, interference exposure is performed on the resist layer R (step S6: interference exposure step). As shown in FIG. 7C, a latent image of a fine wire is formed over the entire region of the resist layer R. The region R1 in the figure is removed after development, and R2 remains. As the exposure light used for interference exposure, a continuous wave DUV (Deep Ultra Violet) laser with a wavelength of 266 nm can be used, and the incident angle θL can be set to 72 °, for example.

After performing the interference exposure, as shown in FIG. 7D, the region R3 excluding the region corresponding to the formation position of the wire grid layer 2 is selectively imaged and exposed to form a latent image of the wire grid layer 2. (Step S7: Imaging exposure step). The imaging exposure can be performed with a light source (i-line) having a wavelength of 365 nm. Since the formation region of the wire grid layer 2 has a larger pitch than the formation region of each wire, exposure can be performed with exposure light having a wavelength larger than that in interference exposure (step S4) in step S6. As the exposure light used for this exposure, for example, a light source (g line) having a wavelength of 436 nm may be used instead of the i line. In this case, an acid generator having sensitivity to g-line is included in the resist instead of an acid generator having sensitivity to wavelength i-line.

After performing the interference exposure and the imaging exposure, PEB (Post Exposure Bake) treatment is performed to increase the acid in the resist and to remove the protecting group in the exposed region (step S8). Thereafter, the resist layer R is developed (step S9: development step). After development, the region R2 of the resist layer R
Then, the region R3 is removed, and as shown in FIG. 7E, a fine linear resist pattern r having a pitch of 140 nm is obtained in the region where the wire grid layer 2 is formed.

After forming the resist pattern r, the aluminum film 2L is etched using the resist pattern r as an etching mask (step S10: etching step). By this etching, regions other than the region overlapping the resist pattern r in the aluminum film 2L are removed, and the pattern of the aluminum film 2L is formed. After forming the pattern of the aluminum film 2L, the resist pattern r is removed (step S11). As a result, as shown in FIG. 7 (f), the wire grid polarizing layer 2 made of fine wires arranged at a pitch of 140 nm is formed on the diffraction function layer 4.

After forming the wire grid polarizing layer 2, a cover layer (not shown) is formed on the wire grid polarizing layer 2 (step S12). This process is performed, for example, by a plasma CVD method (Chemical V
This is performed by forming a layer made of SiO2 or SiN on the wire grid polarizing layer 2 in a vacuum environment by an apor deposition method, a vacuum deposition method, or the like. As a result, the space surrounded by the base body 6, the wire grid polarizing layer 2, and the cover layer can be sealed in a vacuum state between the fine wires. Thus, the wire grid polarizing element 1 of this embodiment is formed.

As described above, according to the present embodiment, after the aluminum film 2L is formed on the substrate 6, both the acid generator sensitive to light having a wavelength of 266 nm and the acid generator sensitive to wavelength 365nm are formed on the resin material. Since the resist to which is added is applied onto the aluminum film 2L, the resist layer R has sensitivity to both light having a wavelength of 266 nm and light having a wavelength of 365 nm. For this reason, it is not necessary to apply a resist having sensitivity to light of each wavelength in two steps, and the resist layer R may be formed once. Thereby, a manufacturing process can be simplified.

In the present embodiment, the base 6 is provided with a plurality of step portions of a diffractive optical element (DOE) having a light scattering function. Thus, when forming a wire grid polarizing element having a diffractive optical element, the manufacturing process can be simplified even when a resist layer having a step is formed on the step.

[Second Embodiment]
Next, a second embodiment of the present invention will be described. In the present embodiment, a liquid crystal device including the wire grid polarizing element described in the above embodiment as a built-in reflective polarizing layer will be described with reference to the drawings.

The liquid crystal device according to the present embodiment is an FFS (Fringe Field Switching) among the horizontal electric field methods for displaying an image by applying an electric field (lateral electric field) in the substrate surface direction to the liquid crystal and controlling the orientation.
This is a liquid crystal device adopting a so-called method. The liquid crystal device of this embodiment is a color liquid crystal device having a color filter on a substrate.

As shown in FIG. 8, the liquid crystal device 100 includes TFT array substrates 10 arranged to face each other.
And the counter substrate 20 are sandwiched with a liquid crystal layer 50. The TFT array substrate 10 has a translucent substrate body 10A such as glass, quartz, or plastic as a base, and wiring 3a, switching elements 70, and the like are formed on the inner surface side (the liquid crystal layer 50 side) of the substrate body 10A. And
An interlayer insulating film 12 is formed so as to cover them.

On the interlayer insulating film 12, the wire grid polarizing element 1 which is an optical element according to the present invention configured to have the wire grid polarizing layer 2, the diffraction function layer 4 and the base 6 shown in FIGS. It is partially formed. In the region where the wire grid polarization layer 2 is formed after the wire grid polarization element 1, a reflective display region R that reflects and displays light is displayed, and the other region is a transmissive display region that transmits light and performs display. T. The wire grid polarizing element 1 is manufactured by the same technique as that of the first embodiment. A pixel electrode 9 is formed on the upper layer of the wire grid polarizing element 1. The pixel electrode 9 is connected to the semiconductor layer 31 of the switching element 70 through the contact hole 45.

Thus, according to this embodiment, since the polarizing plate 19 of the liquid crystal device 100 is manufactured using the manufacturing method of the wire grid polarizing element 1, the manufacturing process can be simplified and low. The liquid crystal device 100 can be manufactured at a manufacturing cost.

(A) is a perspective view of the optical element which concerns on this embodiment, (b) is a perspective view which shows the shape of a diffraction function layer. (A) is sectional drawing along XX plane of the optical element of Fig.1 (a), (b) is sectional drawing to which a part of (a) was expanded. The schematic diagram for demonstrating the function of an optical element. It is a graph which shows the transmitted light characteristic of an optical element, (a) is the wavelength dependence of the transmittance | permeability, (b) is a graph which shows the wavelength dependence of contrast. The figure which shows the example of arrangement | positioning of the unit pattern in an optical element. The flowchart of the manufacturing method of an optical element. (A) to (c) are cross-sectional views in the manufacturing process of the optical element. Sectional drawing which shows the structure of the liquid crystal device which concerns on 2nd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Wire grid polarizing element, 1u ... Unit pattern, 2 ... Wire grid polarizing layer,
2L ... Aluminum film, 4 ... Diffraction functional layer, 4L ... Diffraction functional material layer, 4a ... First region, 4b ... Second region, 6 ... Substrate, 8 ... Step, R ... Resist, 100 ... Liquid crystal device

Claims (6)

A method of manufacturing a wire grid polarizing element having a polarization separating section on a substrate, in which a plurality of wires are provided in a grid shape,
A wire material layer forming step of forming a wire material layer containing the constituent material of the wire on the substrate;
A resist layer forming step of forming, on the wire material layer, a chemically amplified resist layer including an acid generator sensitive to a first wavelength and an acid generator sensitive to a second wavelength greater than the first wavelength; ,
An interference exposure step of performing interference exposure of the first region of the resist layer with light of the first wavelength;
An imaging exposure step of imaging and exposing the second region of the resist layer with light of the second wavelength;
After performing the interference exposure step and the imaging exposure step, a development peeling step of developing and partially peeling the resist layer;
An etching process for etching a portion of the wire material layer exposed by the development and peeling process. A method for manufacturing a wire grid polarizing element. The first region is a region where the plurality of wires are formed,
The method for manufacturing a wire grid polarizing element according to claim 1, wherein the second region is a region where the plurality of wires are not formed. The said 2nd area | region is an area | region wider than the said 1st area | region. The manufacturing method of the wire grid polarizing element of Claim 1 or Claim 2 characterized by the above-mentioned. A plurality of step portions of a diffractive optical element having a light scattering function are provided in a region of the substrate that overlaps the second region in plan view. The manufacturing method of the wire grid polarizing element as described in any one. The light of the first wavelength is ultraviolet light having a wavelength of 266 nm,
The light of the said 2nd wavelength is g line | wire or i line | wire. The manufacturing method of the wire grid polarizing element as described in any one of Claims 1-4 characterized by the above-mentioned. A method of manufacturing a liquid crystal device provided with a polarizing plate,
The said polarizing plate is manufactured using the manufacturing method of the wire grid polarizing element as described in any one of Claims 1-5. The manufacturing method of the liquid crystal device characterized by the above-mentioned.

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