JP2009167038A - ZnO SEED LAYER, ZnO WHISKER PATTERN AND METHOD FOR MANUFACTURING THEM - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide: a ZnO whisker pattern which is formed on a patterned seed layer formed by irradiation with light; a method for manufacturing them; and applications of the ZnO whisker pattern. <P>SOLUTION: The method for manufacturing the ZnO whisker pattern comprises: forming an area of a layer of zinc acetate hydrate or zinc nitrate hydrate and an area of a layer of zinc acetate anhydride or zinc nitrate anhydride on a substrate; and then immersing the substrate into a reaction system of a prescribed temperature, at which zinc oxide is deposited, to convert the layer of the zinc acetate anhydride or zinc nitrate anhydride being a seed layer into a ZnO crystal layer of ZnO nano-particles or a ZnO single crystal and at the same time, to prepare the ZnO whisker pattern by performing crystal growth of ZnO whisker on the ZnO crystal layer. The ZnO whisker pattern is useful for manufacturing devices, and a highly conductive member including the ZnO whisker pattern is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a ZnO seed layer, a ZnO whisker pattern, a manufacturing method thereof, and the like. More specifically, the present invention relates to a whisker having an aspect ratio of 2 or more containing a ZnO crystal as a main component (molar ratio of 50% or more). The present invention relates to a shaped particle integrated film pattern, a manufacturing method thereof, and an application. The present invention provides a ZnO whisker pattern that can be used as, for example, a molecular sensor, a gas sensor, a solution sensor, a dye-sensitized solar cell, and the like.

  Zinc oxide (ZnO) has been widely used in various fields, but in recent years, in particular, interest in dye-sensitized solar cells, molecular sensors, fluorescence characteristics, transparent conductivity, etc. has increased. . In addition, recently, synthesis of ZnO crystals by a solution process has been actively promoted because of the shift to a low environmental load process and high morphology control ability.

So far, for example, synthesis of hexagonal columnar ZnO particles, ellipsoidal ZnO particles, and multi-needle ZnO particles has been reported (Non-Patent Document 1). In the above document, when the experimental conditions are shown, ammonia (28% aqueous solution) was added to a 50 ° C. zinc acetate aqueous solution and kept at 50 ° C. with stirring, and the zinc acetate concentration and ammonia concentration in the solution were 15 mM each. (Zinc acetate), 30, 60, or 90 mM (ammonia), and the molar ratio thereof is adjusted to ([NH ₃ ] / [Zn] = 2.0, 4.0, or 6.0). It is also shown that the pH under these three conditions was pH = 7.04, 7.50, or 8.93, respectively.

  So far, synthesis of ZnO whisker particles and morphology control of ZnO have been reported (Non-Patent Documents 2 to 12). In addition, ZnO whiskers, ZnO whisker films, zinc oxide particles, zinc oxide particle films, and high c-axis oriented high specific surface area ZnO crystal free-standing films have been proposed (Patent Documents 1 to 3).

  Recently, a method for forming a ZnO whisker film has been proposed. In this method, after a zinc acetate solution is applied to a substrate, a ZnO polycrystalline seed layer is formed by heating in the atmosphere under a high temperature condition of 350 ° C., and by using the seed layer, a ZnO whisker film is formed. (Patent Document 4).

  However, in order to form the seed layer, heat treatment at a high temperature of about 350 ° C. or higher is necessary, and conventionally, no seed layer formation without high temperature heat treatment has been reported. Therefore, there has been a problem that a ZnO whisker film cannot be formed on a low heat resistant substrate such as a polymer substrate.

  Further, when a seed layer or a ZnO whisker film is formed on an FTO or ITO substrate, an increase in the resistance of the FTO layer or the ITO layer accompanying a high temperature heat treatment has been caused. When a ZnO whisker film is used as a dye-sensitized solar cell or a sensor, an increase in resistance of the FTO or ITO layer is a big problem that directly leads to deterioration of device characteristics.

  Moreover, formation of the seed layer which does not pass through the heat treatment and drying treatment at room temperature or higher has not been reported so far. Realization of ZnO whiskers at room temperature requires the formation of a seed layer on a low heat resistant substrate or a complex solid surface, a low temperature / low energy consumption process, synthesis in an open system, and the like. If a polymer film such as a conductive film coating polymer can be used for the substrate instead of the FTO coated glass substrate or ITO coated glass substrate, it will be possible to realize a flexible device that can be bent, light weight, low cost, thin layer, etc. be able to.

  In addition, formation of a ZnO whisker pattern has not been reported so far. In order to fabricate a device, it is necessary to form ZnO whiskers only at predetermined locations in accordance with the device, not to form ZnO whiskers on the entire surface of the substrate. Moreover, it is necessary to suppress the formation of ZnO whiskers on the reaction vessel wall surface.

Japanese Patent Application No. 2007-072248 Japanese Patent Application No. 2006-263562 Japanese Patent Application No. 2007-1141 Japanese Patent Application No. 2007-146232 Y. Masuda, N .; Kinoshita, F.A. Sato, K .; Koumoto, Crystal Growth & Design 2006, 6, 75-78 Y. Masuda, N .; Kinoshita and K.K. Koumoto, Electrochimica Acta, 2007, 53, 171-174. Yoshitake Masuda and Kazumi Kato, Key Engineering Materials, 2007, 350, 3-6 N. Saito, H .; Haneda, T .; Sekiguchi, N .; Ohashi, I .; Sakaguchi and K.K. Koumoto, Adv. Mater. , 2002, 14, 418-421 W. Q. Peng, S.M. C. Qu, G .; W. Cong and Z. G. Wang, Crystal Growth & Design, 2006, 6, 1518-1522. Y. R. Lin, S .; S. Yang, S .; Y. Tsai, H .; C. Hsu, S .; T.A. Wu and I. C. Chen, Crystal Growth & Design, 2006, 6, 1951-1955 H. Zhang, D.C. R. Yang, D.D. S. Li, X. Y. Ma, S .; Z. Li and D.D. L. Que, Crystal Growth & Design, 2005, 5, 547-550 K. H. Liu, C.I. C. Lin and S.M. Y. Chen, Crystal Growth & Design, 2005, 5, 483-487. P. O'Brien, T .; Seed and J.M. Knowles, J .; Mater. Chem. , 1996, 6, 1135-1139. S. Yamabi and H.M. Imai, J .; Mater. Chem. , 2002, 12, 3773-3778. L. Vayssiers, K.M. Keis, S .; E. Lindquist and A.M. Hagfeldt, Journal of Physical Chemistry B, 2001, 105, 3350-3352 L. Vaissieres, Advanced Materials, 2003, 15, 464-466.

  Under such circumstances, the present inventors have set a goal of developing a ZnO whisker patterning technology in which ZnO whiskers are produced only at predetermined locations necessary for device production in view of the above-described conventional technology. As a result of intensive research, the present inventors have succeeded in forming a ZnO whisker pattern on the patterned seed layer, and completed the present invention. The present invention has been made in view of the above-described conventional circumstances, and forms a patterned seed layer by light irradiation, provides a ZnO whisker pattern formed on the patterned seed layer, and a method for producing them. And it aims at providing a use.

The present invention for solving the above-described problems comprises the following technical means.
(1) A ZnO whisker pattern deposited on a substrate through a patterned seed layer in a reaction system in which zinc oxide is deposited, and a structure in which ZnO whiskers are grown on the seed layer on the substrate surface ZnO whiskers grown anisotropically in the c-axis direction are oriented and grown upright in the vertical and / or non-vertical directions with respect to the substrate, and the seed layer is thin enough not to be observed by FE-SEM observation. A ZnO whisker pattern characterized by having no polycrystalline ZnO seed layer.
(2) The ZnO whisker pattern according to (1), wherein the reaction system in which zinc oxide is precipitated is a zinc nitrate solution or a zinc acetate solution.
(3) The ZnO whisker pattern according to (1), wherein the substrate is an FTO, glass, silicon, metal, ceramic, or polymer substrate.
(4) The ZnO whisker pattern according to (1), wherein the substrate has a form of a flat plate, a particle, a fiber, or a complex shape.
(5) The ZnO whisker pattern according to (1), wherein the seed layer is an anhydrous zinc acetate seed layer, a ZnO nanoparticle seed layer, or a single crystal ZnO seed layer.
(6) A method for producing a ZnO whisker pattern, wherein a layer region of zinc acetate hydrate or zinc nitrate hydrate and a region of anhydrous zinc acetate or anhydrous zinc nitrate layer are formed on a substrate. It is immersed in a reaction system at a predetermined temperature at which zinc oxide is deposited to convert the anhydrous zinc acetate or anhydrous zinc nitrate layer of the seed layer into a ZnO nanoparticle or single crystal crystal layer, and a ZnO whisker on the ZnO crystal layer. A method for producing a ZnO whisker pattern, characterized in that a ZnO whisker pattern is produced by crystal growth.
(7) A zinc acetate hydrate or zinc nitrate hydrate layer region is formed on a substrate, and this is irradiated with light through a photomask to form anhydrous zinc acetate or anhydrous zinc nitrate layer region. The manufacturing method of the ZnO whisker pattern as described in said (6).
(8) The method for producing a ZnO whisker pattern according to (6) or (7), wherein the temperature of the reaction system is 0 to 99 ° C.
(9) The method for producing a ZnO whisker pattern according to any one of (6) to (8), wherein the substrate is an FTO, glass, silicon, metal, ceramic, or polymer substrate.
(10) The method for producing a ZnO whisker pattern according to any one of (6) and (9), wherein the substrate has a form of flat plate, particle, fiber, or complex shape.
(11) Adjusting the degree of densification of the ZnO whisker pattern by adjusting the temperature, raw material concentration, and / or pH condition of the reaction system, or the degree of densification of the seed layer, or the number density of whiskers is 1-1000 controlled to the / [mu] m ^2, the method for manufacturing a ZnO whisker pattern according to any one of (6) from (10).
(12) A highly conductive member comprising a nanostructure comprising the ZnO whisker pattern according to any one of (1) to (5) as a constituent element.
(13) The highly conductive member according to (12), wherein the member is a molecular sensor, a gas sensor, or a dye-sensitized solar cell.

Next, the present invention will be described in more detail.
The main feature of the present invention is to synthesize a seed layer by light irradiation and to form a ZnO whisker pattern on the seed layer. In the method of the present invention, a patterned seed layer is formed by light irradiation, and a ZnO whisker pattern can be formed using the seed layer. Here, whisker-like particles (including whisker-like particles, needle-like particles, rod-like particles, and rod-like particles) refer to anisotropic particles having an aspect ratio of 2 or more. The aspect ratio is a ratio of length / diameter, which is 1 for spherical particles and cubic particles, and 1 or more for needle-like particles, rod-like particles, and whisker-like particles.

  Moreover, the formation of ZnO whiskers can be promoted or suppressed by treating the substrate surface with light irradiation. The seed layer refers to an anhydrous zinc acetate seed layer, a ZnO nanoparticle seed layer and a single crystal AnO layer, as well as a layer and a surface that promote the formation of ZnO whiskers. In the method of the present invention, the formation of the patterned seed layer for forming the ZnO whisker can be synthesized without high-temperature heat treatment at about 350 ° C. or higher. As the zinc-containing solution for forming the seed layer, a zinc-containing solution such as a zinc nitrate solution can be used in addition to the zinc acetate solution of Examples described later. Various aqueous solutions can also be used as long as the solution contains zinc.

  As long as it is a process capable of attaching zinc or a substance containing zinc ions to the substrate surface, not only the attachment of the solution but also a treatment such as spraying zinc nitrate powder can be used. In the case of coating with a solution, in addition to dip coating and spin coating, various methods such as a pulling method and a spraying method can be used as long as the process can attach the solution to the substrate surface.

  The light irradiation of the zinc-containing solution is used to promote the formation of ZnO whiskers. Conditions such as irradiation lamp wavelength, irradiation lamp intensity, temperature, atmosphere and treatment time can be changed, and the formation of ZnO whiskers is promoted. Heat treatment or solution treatment can be used as long as it is a seed layer forming treatment or surface treatment.

  In addition to the formation of a seed layer by light irradiation of a zinc-containing solution, a ZnO crystal precipitation treatment from an aqueous solution can be used as long as it is a seed layer formation treatment or surface treatment that promotes the formation of ZnO whiskers.

  Instead of the seed layer formed in this process, amorphous ZnO, a zinc-containing material such as zinc acetate, or a mixture thereof can be used. Instead of the ZnO seed layer formed by this process, a single crystal ZnO layer can also be used.

  By using a single crystal ZnO layer or the like instead of the ZnO seed layer formed in this process, the whiskers can be tilted or oriented in the same direction. Instead of the ZnO seed layer formed by this process, other seed layers not containing zinc can also be used.

  Depending on the solution conditions, a hydrophobic surface or a hydrophilic surface can be used instead of the ZnO seed layer formed in this process. Depending on the solution conditions, a surface treatment other than the seed layer formed in this process can be used.

  In addition to the FTO substrate, various substrates such as glass, silicon, metal, ceramics, and polymer can be used. In addition to the flat substrate, a particle substrate, a fiber substrate, or a substrate having a complicated shape can also be used.

  As the zinc-containing aqueous solution for forming the ZnO whisker pattern, a zinc-containing aqueous solution such as a zinc acetate solution can be used in addition to the zinc nitrate solution of Examples described later. In addition, a non-aqueous solution reaction system such as an organic solution can be used as long as it is a reaction system in which zinc oxide is deposited.

  A hydrothermal reaction or the like can also be used as long as it is a reaction system in which zinc oxide is precipitated. Instead of hexamethylenetetraamine, ethylenediamine, ammonia or the like can be used. Further, ZnO can be deposited by changing the temperature, raw material concentration, and pH of the reaction system without adding hexamethylenetetraamine or the like.

  Instead of polyethyleneimine, organic molecules such as amino group-containing polymers and monomers can be used. Further, ZnO can be deposited by changing the temperature, raw material concentration, and pH of the reaction system without adding polyethyleneimine or the like. The temperature of the reaction system can also be appropriately adjusted in the range of the freezing point of the aqueous solution and below the boiling point (approximately 0-99 ° C.) according to the raw material concentration, additives, pH and the like.

  In producing the whisker pattern, various substrates such as glass, silicon, metal, ceramics, and polymer can be used in addition to the FTO substrate. In addition to the flat substrate, a particle substrate, a fiber substrate, or a substrate having a complicated shape can also be used.

  An appropriate layer such as a dense layer can be formed below the ZnO whisker. This layer improves the mechanical strength. It is also possible not to form a layer such as a dense layer below the ZnO whisker. Since there is no dense layer, continuous holes can be formed up to the lower portion of the whisker. Further, an increase in resistance due to the underlayer can be suppressed.

  Whiskers can be grown perpendicular to the substrate, such as by using a flat substrate. Whiskers can be grown non-perpendicularly on the substrate, such as by using an uneven substrate. This can also increase the open pores in the whisker membrane. By adjusting the substrate processing or the like, whiskers perpendicular to the substrate and non-vertical whiskers can be mixed and grown.

The number of whiskers per unit substrate area can be increased by adjusting the solution conditions and densifying the seed layer. In an example described later, the number is about 100 / μm ² . By adjusting the solution conditions and densifying the seed layer, a continuous dense film can be formed instead of a whisker film.

The whisker film can be formed into a rough film or only one whisker can be formed by adjusting the solution conditions or arranging the seeds sparsely. The number density of whiskers is about 100 / μm ² in the embodiment.

The number density of whiskers can be controlled at 1-1000 pieces / μm ² by adjusting the solution conditions, densifying the seed layer, sparse arrangement, and the like. Moreover, it is also possible to use a whisker continuous body or a continuous film in which it is difficult to measure the number density, and it is also possible to form a porous film or a dense film.

  By adjusting the solution conditions, various shaped solids such as multi-needle whiskers, spirals, and radial particles can be deposited or adhered instead of whiskers. For light irradiation, light of a wavelength such as an excimer lamp, electron beam, vacuum ultraviolet light, ultraviolet light, visible light, infrared light, or microwave can be used instead of the low-pressure mercury lamp.

  In the method of the present invention, a ZnO crystal is anisotropically grown into a whisker shape on the basis of a patterned seed layer, and a ZnO whisker film in which ZnO whiskers are oriented and grown in a direction perpendicular to the substrate is formed. Whisker films are nanostructures that can achieve both high specific surface area, high electrical conductivity, and spatial controllability between whiskers. For example, they exhibit high characteristics in molecular sensors, gas sensors, dye-sensitized solar cells, etc. It is expected to be possible.

  In the present invention, since the seed layer is formed at room temperature by light irradiation, the seed layer is formed on the surface of a low heat resistant substrate or a complex solid, a low temperature / low energy consumption process, synthesis in an open system, etc. Has advantages. In addition, the formation of ZnO whisker patterns using a solution process enables the formation of whisker films on low heat resistant substrates and complex-shaped solid surfaces, low temperature / low energy consumption processes, synthesis in open systems, etc. Has advantages.

The present invention has the following effects.
(1) The seed layer can be formed by light irradiation. In particular, the seed layer can be formed at room temperature by light irradiation.
(2) Therefore, high-temperature heat treatment at about 350 ° C. or higher, which has been conventionally required, is not required. Therefore, a ZnO whisker pattern can be formed on a low heat resistant substrate such as a polymer substrate.
(3) Instead of FTO coated glass substrate or ITO coated glass substrate, when a polymer film such as conductive film coating polymer is used for the substrate, realization of flexible device that can be bent, weight reduction, cost reduction, thinning, etc. Can be realized.
(4) When forming a ZnO whisker film on an FTO or ITO substrate, the resistance increase of the FTO layer or the ITO layer was conventionally caused by the high-temperature heat treatment in the seed layer formation. Can do.
(5) A ZnO whisker pattern can be synthesized in an aqueous solution using anisotropic growth of the seed layer and ZnO crystal.
(6) Since a vapor phase process is not used, a whisker film can be formed on a solid surface such as a flat plate or a complicated shape with a simple apparatus at low cost.
(7) A whisker pattern can be obtained without undergoing hydrothermal treatment or high-temperature / long-time ZnO crystallization treatment.
(8) The whisker film is a nanostructure that can achieve both high specific surface area, high electrical conductivity, and spatial controllability between whiskers, and has high characteristics in molecular sensors, gas sensors, dye-sensitized solar cells, and the like. Expected to be expressed.

  EXAMPLES Next, although this invention is demonstrated concretely based on an Example, this invention is not limited at all by the following Examples. In the following examples, the seed layer is formed by holding the zinc-containing solution at 65 ° C. for 24 hours. However, the seed layer can be similarly formed even under non-high temperature heat treatment conditions of 0-99 ° C. It was.

  In this example, the seed layer was formed by irradiating the zinc acetate dihydrate aqueous solution layer coated on the FTO substrate with light. At this time, the patterned seed layer was formed by modifying only the exposed region by exposing through a photomask. Furthermore, this patterned seed layer was immersed in an aqueous solution in which zinc nitrate or the like was dissolved to form ZnO whiskers only in the seed layer region, and a ZnO whisker pattern was produced.

  In brief, as Process 1, an ethanol solution of zinc acetate dihydrate was coated on an FTO substrate to form a layer of zinc acetate dihydrate on the FTO substrate. Next, as process 2, the FTO substrate was irradiated with light through a photomask. Thereby, only in the exposed area, zinc acetate dihydrate was denatured into anhydrous zinc acetate, crystal water was removed, and an area of anhydrous zinc acetate and an area of zinc acetate dihydrate were formed on the FTO substrate.

  Further, as process 3, the FTO substrate was immersed in an aqueous zinc nitrate solution to form a ZnO whisker pattern. Thereby, the anhydrous zinc acetate was changed to ZnO, thereby producing a ZnO nanoparticle seed layer, and ZnO whiskers were grown on the ZnO nanoparticle seed layer.

  The crystal structure was evaluated by XRD (XRD; RINT-2100V, Rigaku). The crystal morphology and microstructure were observed with an FE-SEM (FE-SEM; JSM-6335FM, JEOL Ltd.) and a transmission electron microscope (TEM; H-9000UHR, 300 kV, Hitachi).

(1) Production of Seed Layer FIG. 1 shows an outline of production of a seed layer and formation of a ZnO whisker pattern using the seed layer. Zinc acetate dihydrate (Zn (CH ₃ COO) ₂ .2H ₂ O, 99%)) was dissolved in absolute ethanol. The concentration of zinc acetate dihydrate at this time was 0.01M (mol / L).

A zinc acetate dihydrate solution was spin-coated four times on the cleaned FTO substrate. The FTO substrate on which the zinc acetate dihydrate solution was spin-coated was irradiated with ultraviolet rays for 1 hour through a photomask under the following conditions.
(Irradiation conditions)
Photomask: letterpress printing, test chart UV irradiation device: low pressure mercury lamp, manufactured by Sen Special Light Source, SUV110GS-36, 110W, low pressure UV lamp (SUV110GS-36, SEN Light Corporation)
Irradiation distance under atmospheric pressure and atmospheric pressure (distance between substrate and lamp): 2.0cm

  By this light irradiation, the water of crystallization in the zinc acetate dihydrate in the exposed area was removed and changed to anhydrous zinc acetate. Also, the unexposed areas remained as zinc acetate dihydrate.

(2) Preparation of ZnO whisker film Zinc nitrate (zinc nitrate hexahydrate (Zn (NO ₃ ) ₂ .6H ₂ O, 99%)) 0.1M, hexamethylenetetramine (HMT, C ₆ H ₁₂ N ₄ , 99%)) 0.1M, 0.02M polyethylenimine (PEI, (C ₂ H ₅ N) _n , branched mean molecular weight of 600, 99%)) was prepared in an amount of 200 ml.

  The FTO substrate on which the patterned seed layer was formed was immersed obliquely downward in a beaker containing the reaction solution, and held for 30 minutes without stirring. An SEM image of the ZnO whisker pattern is shown in FIG. (Ad) is a ZnO whisker pattern. (E) is an enlarged image of the ZnO whisker formation region. The inset is the hexagonal tip of the ZnO whisker. (F) is a non-exposed region substrate surface.

  ZnO whiskers were formed in the light exposure region. On the other hand, no ZnO whiskers were formed in the non-exposed areas. Thus, ZnO whiskers were formed selectively in a region, and a ZnO whisker pattern was produced [FIG. 2 (a-d)]. Moreover, the ZnO whisker film formed in the light exposure region was dense [FIG. 2 (e)].

  The tip of the ZnO whisker was a hexagon [FIG. 2 (e) inset]. ZnO is a hexagonal columnar whisker. It is thought that the hexagonal columnar crystal structure was grown reflecting the hexagonal crystal structure of ZnO. In the hexagonal crystal structure, the hexagonal plane is a c-plane perpendicular to the c-axis. From this, the hexagonal surface of the whisker is also considered to be the c-plane of ZnO. Furthermore, the longitudinal direction of the whisker is considered to be the c-axis direction.

On the other hand, ZnO whiskers did not grow in the non-exposed areas [FIG. 2 (f)]. This indicates that zinc acetate dihydrate does not function as a seed layer that promotes the growth of ZnO whiskers. The XRD diffraction pattern of the ZnO whisker pattern is shown in FIG. A diffraction line derived from SnO _{2 on the} surface of the FTO substrate can be seen.

In addition, the precipitate-derived peak was attributed to ZnO (JCPDS card (36-1451) for the typical wurtzite-type ZnO crystal (hexagonal, P6 ₃ mc)). Further, no diffraction peak derived from anhydrous zinc acetate was observed.

  The relative intensity of each diffraction line of ZnO was different from the relative intensity of randomly oriented ZnO. Strong 0002 diffraction lines and weak 10-10, 10-11, 10-12, 10-20, 10-13 diffraction lines were observed. This indicates that the ZnO whiskers grown anisotropically in the c-axis direction are oriented and grown upright in the direction perpendicular to the substrate.

  FIG. 4 shows a TEM image of the ZnO film grown on the anhydrous zinc acetate coating region. It is shown that the ZnO whiskers are closely formed with no gap with respect to the FTO substrate. No anhydrous zinc acetate was observed between the ZnO whiskers and the FTO substrate. These indicate that anhydrous zinc acetate was dissolved.

  Further, in view of the fact that formation of ZnO whiskers is not promoted on the untreated FTO substrate, it is considered that anhydrous zinc acetate was subjected to forced hydrolysis to form an extremely thin ZnO crystal layer (nanoparticle layer). Since ZnO whiskers are formed based on the extremely thin ZnO crystal layer, it is considered that no large ZnO crystal particles or the like are observed between the ZnO whiskers and the FTO substrate.

  It has been shown that the ZnO whisker film formed by this process does not have a polycrystalline ZnO seed layer between the ZnO whisker film and the FTO substrate. This is clearly different from the ZnO whisker film of the prior art (Japanese Patent Application No. 2007-146232) and the manufacturing method thereof.

  Since there is no polycrystalline ZnO seed layer between the ZnO whisker film and the FTO substrate, it is possible to suppress an increase in resistance, a decrease in visible light transmittance, a decrease in adhesion, and a decrease in mechanical strength due to the ZnO seed layer.

  Anhydrous zinc acetate forms a tetrahedral structure with four oxygen atoms. This tetrahedron is connected by acetic acid groups. The ligand for acetic acid is not bidentate (literature: Capilla, AV; Aranda, RA Crystal Structure Communications 1979, 8, 795).

  In zinc acetate dihydrate, zinc is octahedral. All acetate groups are bidentate. The basic structure is linked by a strong hydrogen bond to form a two-dimensional sheet structure. In addition, the sheets are connected only by a weak van der Waals force (reference: Van Nieker K, JN; Schooning, FR, talbot, JH Actaloglographica 1953, 6,720).

  Further, it is known that the solubility of anhydrous zinc acetate in water is as low as 23% (solubility at room temperature) compared to the solubility of zinc acetate dihydrate in water (43%). For this reason, zinc acetate dihydrate easily dissolves when the substrate is immersed in an aqueous zinc nitrate solution, whereas anhydrous zinc acetate does not dissolve easily and can be converted to ZnO. It is done.

According to the observation of the FE-SEM image of the FTO substrate and the FTO substrate surface after the formation of the ZnO seed layer, the untreated FTO substrate surface is covered with the SnO ₂ layer, but the surface is several tens to several hundreds of nm. It had irregularities.

  Moreover, the surface was coat | covered with the ZnO particle | grains of 20 nm or less along the unevenness | corrugation by the ZnO seed layer formation process. Since the amount of ZnO nanoparticles forming the seed layer was very small, no ZnO diffraction line was observed from the XRD of the FTO substrate after the seed layer was formed.

  According to the SEM photograph after the FTO substrate on which the seed layer was formed was immersed in an aqueous zinc nitrate solution, ZnO whiskers having a diameter of 30 to 150 nm grew in the direction perpendicular to the substrate, and the FTO surface was densely covered. The whisker length (whisker film thickness) was also uniform.

  The enlarged image shows that the whisker has a hexagonal cross-sectional shape, which is due to the fact that ZnO has a hexagonal crystal structure and the generated ZnO is a single crystal.

According to the cross-sectional image and tilted image of the ZnO whisker film, when the seed layer was formed by dip coating, the number (number density) of whiskers per unit substrate area was 100 / μm ² .

  It was shown that ZnO whiskers with uniform lengths grew from the FTO surface and formed a dense whisker film. In addition, many whiskers were grown with an inclination depending on the unevenness of the FTO surface. The length of the whisker estimated from the cross section SEM was about 900 nm.

  Moreover, it succeeded also in equalizing the diameter of a ZnO whisker by forming a ZnO seed layer by spin coating instead of dip coating. In addition, whiskers having a diameter of 30 to 80 nm were generated at a solution concentration of 0.025M, and whiskers having a diameter of 0.9 to 1.5 μm were generated at a concentration of 0.1M.

  In this manner, a ZnO whisker film can be formed under a wide range of concentration conditions, and the size of the ZnO whisker can be increased as the solution concentration increases. In addition, by using a ZnO seed layer, a ZnO whisker film can be formed on various substrates such as FTO, ITO, amorphous glass, and silicon.

  High-resolution TEM observation and electron diffraction images showed that the ZnO whiskers were single crystal ZnO. It was also shown that whiskers grew anisotropically in the c-axis direction ((0001) direction).

  The lattice spacing estimated from the TEM image was 0.26 nm, which coincided with the (0002) plane spacing of ZnO. As can be seen from SEM observation, the ZnO whisker film had many nano-sized open pores.

  The whiskers were single crystal ZnO grown anisotropically in the c-axis direction as seen from TEM observation. These single crystal ZnOs are surrounded by nonpolar faces, and in the ZnO powder, it has been reported that the nonpolar faces (−1010) exhibit high adsorption characteristics for CO gas (reference: Scarano, Spoto, G .; Bordiga, S .; Zecchina, A .; Lamberti, C. Surf. Sci. 1992, 276, (1-3), 281-298).

  From this, it is considered that ZnO whiskers also have high adsorption characteristics. Furthermore, since it is a single crystal and there is no grain boundary in the whisker film region, it has succeeded in avoiding an increase in resistance due to the grain boundary. High characteristics as a dye-sensitized sensor or dye-sensitized solar cell are expected due to the nano-sized open pores, high surface area, high conductivity, and high adsorption characteristics of the ZnO whisker film.

  Regarding the crystal growth mechanism, the ZnO whisker has a shape in which a sharp tip and a flat hexagonal surface are connected by six rectangles. In the whisker film, as the distance from the substrate is increased, the whisker shape gradually becomes thinner and approaches a needle-like shape.

  Generally, a wurtzite ZnO crystal has a hexagonal crystal structure and is composed of six nonpolar (10-10) planes, a polar oxygen plane (000-1), and a polar zinc plane (0001). ing. Polar surfaces with polarization on the surface are thermodynamically less stable than nonpolar surfaces. Therefore, rearrangement is performed to reduce the surface energy of the crystal, and the crystal growth rate tends to increase.

  As is well known, crystal planes with a high crystal growth rate disappear faster. Therefore, the crystal exhibits a form covered with a crystal plane having a slow growth rate. The growth rate of each crystal plane under hydrothermal conditions has been reported as follows. V (0001)> V (-101-1)> V (-1010)> V (-1011)> V (000-1) (reference: (1) Zhang, H .; Yang, D .; Ji, Y Ma, X.F .; X., J.; Que, DLJ Phys.Chem.B 2004, 108, 3955-3958, (2) Ladies, RA; AA AJ Phys. Chem. 1960, 64, 688-691).

  Therefore, the most stable form is a hexagonal column extending in the c-axis direction. PEI which is an additive of this reaction system has many amino groups in its long molecular chain. These amino groups are known to selectively adsorb on specific crystal planes and have a large effect on surface free energy and crystal growth rate (reference: Sousa, VC; Segadas, AM; Morelli). Kiminami, R. Int. J. Inorg. Mater. 1999, 1, (3-4), 235-241).

  Therefore, also in this reaction system, it is considered that the growth rate of (0001) and (000-1), which are polar faces, is increased because PEI adsorbs to the nonpolar face and suppresses crystal growth. In addition, in the case of whisker growth on the ZnO seed layer, heterogeneous nucleation is promoted by the seed layer and ZnO whisker formation is performed on the ZnO seed, and thereafter, a polar surface in contact with the substrate cannot be grown. It is considered that anisotropic growth progressed in the direction perpendicular to the substrate. Therefore, it is considered that the surface in contact with the ZnO seed layer has a hexagonal surface, and the whisker tip that is the growth end has a sharp tip.

  As described above in detail, the present invention relates to a ZnO seed layer, a ZnO whisker pattern, and a manufacturing method thereof. According to the present invention, a ZnO whisker pattern is formed using anisotropic growth of a seed layer and a ZnO crystal. It can be synthesized in an aqueous solution. Therefore, the high-temperature heat treatment at about 350 ° C. or higher, which has been conventionally required, is not required. Therefore, a ZnO whisker pattern can be formed on a low heat resistant substrate such as a polymer substrate. According to the present invention, when a polymer film such as a conductive film coating polymer is used for a substrate instead of an FTO coated glass substrate or an ITO coated glass substrate, a flexible device that can be bent, weight reduction, cost reduction, thinning, etc. Can be realized. In addition, when forming a ZnO whisker film on an FTO or ITO substrate, the resistance increase of the FTO layer or the ITO layer was conventionally caused by the high-temperature heat treatment in the seed layer formation, but this increase in resistance can be avoided. it can. In the present invention, since a vapor phase process is not used, a whisker film can be formed on a solid surface such as a flat plate or a complicated shape with a simple apparatus at low cost. The whisker film of the present invention is a nanostructure that can achieve both high specific surface area, high conductivity, and spatial controllability between whiskers, and has high characteristics in molecular sensors, gas sensors, dye-sensitized solar cells and the like. It is useful as something that can be expressed.

The conceptual diagram of ZnO whisker pattern formation by light irradiation is shown. (A) is a spin coating of a zinc acetate dihydrate ethanol solution. (B) is ultraviolet irradiation through a photomask. (C) is a seed layer patterned into a zinc acetate dihydrate layer region and an anhydrous zinc acetate layer region. (D) is the production of a ZnO whisker pattern by forming ZnO whiskers in the anhydrous zinc acetate region. The SEM image of a ZnO whisker pattern is shown. (Ad) is a ZnO whisker pattern. (E) is an enlarged image of the ZnO whisker formation region. The inset is the hexagonal tip of the ZnO whisker. (F) is a non-exposed region substrate surface. 3 shows an XRD diffraction pattern of a ZnO micropattern. 2 shows a TEM image of a ZnO film grown on an anhydrous zinc acetate coating region.

Claims (13)

  A reaction system in which zinc oxide is deposited, which is a ZnO whisker pattern deposited on a substrate through a patterned seed layer, and has a structure in which ZnO whiskers are grown on the seed layer on the substrate surface. ZnO whiskers grown anisotropically in the c-axis direction are oriented and grown vertically and / or non-perpendicularly to the substrate, and the seed layer is thin enough not to be observed by FE-SEM observation. A ZnO whisker pattern having no polycrystalline ZnO seed layer.   The ZnO whisker pattern according to claim 1, wherein the reaction system in which zinc oxide is precipitated is a zinc nitrate solution or a zinc acetate solution.   The ZnO whisker pattern according to claim 1, wherein the substrate is an FTO, glass, silicon, metal, ceramic, or polymer substrate.   The ZnO whisker pattern according to claim 1, wherein the substrate has a form of a flat plate, a particle, a fiber, or a complex shape.   The ZnO whisker pattern according to claim 1, wherein the seed layer is an anhydrous zinc acetate seed layer, a ZnO nanoparticle seed layer, or a single crystal ZnO seed layer.   A method for producing a ZnO whisker pattern, wherein a zinc acetate hydrate or zinc nitrate hydrate layer region and an anhydrous zinc acetate or anhydrous zinc nitrate layer region are formed on a substrate. The seed layer is immersed in a reaction system at a predetermined temperature to convert the anhydrous zinc acetate or anhydrous zinc nitrate layer into a ZnO nanoparticle or single crystal crystal layer, and a ZnO whisker is grown on the ZnO crystal layer. To produce a ZnO whisker pattern.   Forming an area of a layer of zinc acetate hydrate or zinc nitrate hydrate on a substrate and irradiating it with light through a photomask to form an area of an anhydrous zinc acetate or anhydrous zinc nitrate layer; Item 7. A method for producing a ZnO whisker pattern according to Item 6.   The method for producing a ZnO whisker pattern according to claim 6 or 7, wherein the temperature of the reaction system is 0 to 99 ° C.   The method for producing a ZnO whisker pattern according to any one of claims 6 to 8, wherein the substrate is an FTO, glass, silicon, metal, ceramic, or polymer substrate.   The method for producing a ZnO whisker pattern according to any one of claims 6 to 9, wherein the substrate has a form of a flat plate, a particle, a fiber, or a complicated shape. The degree of densification of the ZnO whisker pattern is adjusted by adjusting the temperature, raw material concentration and / or pH condition of the reaction system, or the degree of densification of the seed layer, or the number density of whiskers is 1-1000 pieces / μm. ^The method for producing a ZnO whisker pattern according to claim 6, wherein the ZnO whisker pattern is controlled to ² .   A highly conductive member comprising the nanostructure comprising the ZnO whisker pattern according to claim 1 as a constituent element. The highly conductive member according to claim 12, wherein the member is a molecular sensor, a gas sensor, or a dye-sensitized solar cell.