JP2009151911A - Method of manufacturing magnetic head, the magnetic head, and magnetic recording device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetic head, capable of improving throughput in comparison with a conventional method when magnetic poles are formed in a damascene structure. <P>SOLUTION: The method includes the step of forming a conductive layer 31 on a substrate layer 3, the step of directly forming a resist mask 32 having an opening 33 on the conductive layer 31, the step of forming a cavity 34 in the conductive layer 31 by etching the conductive layer 31 at least up to the middle of a layer thickness through the opening 33 of the resist mask 32, the step of forming a magnetic layer 35 electrically separated from the conductive layer 31 by using the conductive layer 31 as a plating electrode in the cavity 34 and on the conductive layer 31 after removing the photoresist 32, and the step of setting the magnetic layer 31 left in the cavity 34 as a magnetic pole 21 by removing the magnetic layer 35 from the upper surface of the conductive layer 31. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a magnetic head, a magnetic head, and a magnetic recording apparatus, and more particularly, to a method for manufacturing a magnetic head having magnetic poles, and a magnetic head having a magnetic pole and magnetic recording apparatuses.

  Among various recording devices used in computers, audios, etc., magnetic recording devices are historically old and are widely spread. As one of the magnetic recording devices, there is a magnetic disk device having a disk-shaped magnetic recording medium and a magnetic head that floats thereon.

  Most of the recording methods of the magnetic disk apparatus supplied to the market so far are called in-plane magnetic recording methods in which the direction of magnetization recorded on the recording layer is in the plane direction. In order to obtain a high recording density in this in-plane magnetic recording system, it is necessary to make the recording layer of the magnetic recording medium thin and to make the magnetic crystal grains constituting the recording layer fine.

However, if the recording layer of the magnetic recording medium is thinned, a phenomenon that information is lost when heat is applied to the magnetic disk, that is, a thermal fluctuation phenomenon occurs, which is one factor that hinders an increase in recording density.
On the other hand, there is a perpendicular magnetic recording method in which the direction of magnetization in the recording layer is directed to the direction perpendicular to the surface of the recording layer, which has been put into practical use in recent years.

In the perpendicular magnetic recording system, the area of each magnetic domain on the surface of the recording layer can be reduced as compared with the in-plane magnetic recording system, so that a higher recording density can be achieved. Furthermore, since the recording magnetization is oriented in the direction perpendicular to the film surface of the recording layer, the occurrence of the thermal fluctuation phenomenon that occurs when the recording layer is thinned is prevented, and there is no inconvenience caused by increasing the thickness of the recording layer. .
In any of these recording methods, the magnetic disk device is required to have a larger capacity and a higher recording density.

  In order to meet the demand for higher recording density, it is necessary to increase the coercivity of the magnetic recording medium while outputting a strong magnetic field from the magnetic recording head to the magnetic recording medium. The magnetic recording head has an exciting coil that generates a recording magnetic field and a magnetic pole that guides the recording magnetic field to a magnetic recording medium. In order to output a strong recording magnetic field, for example, the magnetic pole is made of a magnetic material having magnetic characteristics such as a high saturation magnetic flux density.

When writing information to a magnetic recording medium, magnetic recording is performed by applying a strong magnetic field from the magnetic recording head to the minute area of the magnetic recording medium. When a magnetic field exceeding the holding force of the magnetic recording medium is applied to the adjacent minute area, There is a possibility that the magnetic information in the adjacent minute area will be erased.
Accordingly, in order to eliminate such a writing error, the smaller the density of the magnetic recording medium, the more important it is to make the writing portion of the magnetic pole smaller.

  As a method of forming a magnetic pole, a method of patterning a magnetic layer using a resist and a hard mask is known. As another forming method, it is known that a magnetic film is embedded in an opening of a resist by electrolytic plating and used as a magnetic pole, and an alumina layer is formed around the magnetic pole after the resist is removed.

  On the other hand, since the magnetic head is composed of a multilayer structure such as an excitation coil and a magnetic pole, a flattening technique is required in the manufacturing process. As a process involving the planarization technique, for example, there is a process of forming a magnetic pole having a damascene structure. To form a damascene magnetic pole, first, after forming a magnetic pole-shaped recess in the insulating film, a magnetic layer is formed in the recess and on the insulating film, and then the magnetic layer is polished to leave the magnetic layer in the recess. The layer is a magnetic pole.

  In this case, a cavity is formed in the insulating film by etching using a resist, and a magnetic material is buried in the cavity by plating, and then a magnetic pole is selectively left in the cavity by polishing to form a magnetic pole. .

  Further, a multilayer structure insulating layer is further formed on the first insulating layer serving as a base, and then a trench is formed in the multilayer structure insulating layer using a resist mask. Further, the multilayer structure insulating layer is formed on the multilayer structure insulating layer and in the trench. In this method, a magnetic layer is formed by collimation sputtering, and then a part of the multilayer structure insulating layer and an unnecessary part of the magnetic layer are removed by polishing or the like, and the magnetic layer remaining in the trench is used as a magnetic pole body. ing.

The multilayer structure insulating layer has a structure in which an etching stopper layer, a second insulating layer, a polishing stopper layer, an etching mask layer, and a third insulating layer are stacked in order from the bottom, and the second and third insulating layers are made of silicon oxide. The other parts are made of alumina or the like.
When forming the trench, after patterning the third insulating layer using a resist mask, the insulating layer below the third insulating layer is patterned using the third insulating layer as a hard mask.
JP-T-2005-527101 Japanese Patent Laid-Open No. 10-27318 JP 2007-18690 A JP-A-7-141621

Next, problems found by the present inventors will be described.
Comparing the collimation sputtering method used as a method for forming a magnetic film with the electroplating method, the film formation rate is faster in electroplating, and the magnetic pole forming process employing the electroplating method is as follows.

  First, as shown in FIG. 11A, an alumina layer 102 and a hard mask layer 103 are formed on a first insulating layer 101 serving as a base. Further, after applying a photoresist 104 on the hard mask layer 103, the photoresist 104 is exposed and developed to form an opening 105 having a magnetic pole shape as shown in FIG. 11B.

The hard mask layer 103 is made of a material having higher etching selectivity with respect to the photoresist 104 than the alumina layer 102, for example, permalloy.
Subsequently, as shown in FIG. 11C, the hard mask layer 103 is etched through the first opening 105 to form the second opening 106. In this case, the photoresist 104 is thinned.

  Next, after removing the photoresist 104 as shown in FIG. 11D, the alumina layer 102 is etched through the second opening 106 of the hard mask layer 103 to remove the cavity 107 as shown in FIG. Form.

  Further, as shown in FIG. 11 (f), a plating seed layer 108 made of a conductive material is formed along the upper surface of the hard mask layer 103 and the inner surface of the cavity 107. Further, as shown in FIG. A magnetic layer 109 is formed on the plating seed layer 108 by electrolytic plating.

  Thereafter, as shown in FIG. 11 (h), the magnetic layer 109, the hard mask 103, and the plating seed layer 108 are removed from the upper surface of the alumina layer 102 by chemical mechanical polishing, and the magnetic layer 109 is placed in the cavity 107. Leave as magnetic pole 109a.

  By the way, when the alumina layer 102 is etched through the first opening 105 of the photoresist 104 without using the hard mask layer 103, the alumina layer 102 has a low etching selectivity with respect to the photoresist 104, so that the photoresist 104 is thickened. Even so, patterning of the alumina layer 102 becomes difficult.

  On the other hand, when the hard mask layer 103 is used, the etching ratio of the alumina layer 102 to the mask can be increased, but the film forming process and the patterning process of the hard mask layer 103 are required, and the mask formation takes time. .

  An object of the present invention is to provide a method for manufacturing a magnetic head, a magnetic head, and a magnetic recording apparatus, which can improve the throughput when forming a damascene magnetic pole.

According to one aspect of the present invention, a step of forming a conductive layer on a base layer, a step of directly forming a resist mask having an opening on the conductive layer, and the opening through the opening of the resist mask. Forming a cavity in the conductive layer by etching the conductive layer at least halfway through the layer thickness; removing the resist mask from the conductive layer; and using the conductive layer as a plating electrode, Forming a magnetic layer magnetically separated from the conductive layer in the cavity and on the conductive layer by electroplating; and removing the magnetic layer from the upper surface of the conductive layer to form the cavity And a step of using the magnetic layer left in the magnetic pole as a magnetic pole.
According to another aspect, a step of forming a conductive layer on a base layer, and a step of forming a cavity in the conductive layer by removing the conductive layer at least halfway through the ion beam irradiation. Using the conductive layer as an electrode for plating, and forming a magnetic layer magnetically separated from the conductive layer in the cavity and on the conductive layer by electrolytic plating; and There is provided a method of manufacturing a magnetic head, comprising: removing the conductive layer from the upper surface to use the magnetic layer left in the cavity as a magnetic pole.
According to still another aspect, a conductive layer having a cavity formed therein, a magnetic pole formed in the cavity and magnetically separated from the conductive layer, and a first insulation at least above and below the magnetic pole There is provided a magnetic head comprising: an excitation part formed through a layer; and a magnetic layer formed on the excitation part through a second insulating layer and magnetically coupled to the magnetic pole. Is done.
According to still another aspect, there is provided a magnetic recording apparatus comprising the magnetic head described above and a magnetic recording medium disposed to face the magnetic head.

According to the present invention, after forming a cavity by patterning a conductive layer with a resist mask without using a hard mask or patterning a conductive layer with an ion beam to form a cavity, the magnetic pole is further electrolyzed in the cavity. Since it is formed by plating, it is not necessary to form a hard mask for forming a cavity, and the conductive layer can be used as a plating electrode.
Therefore, when the magnetic layer constituting the magnetic pole is formed by electrolytic plating, the plating seed layer can be omitted, or even if the plating seed layer is formed, the thickness can be made thinner than before.
Furthermore, the magnetic characteristics of the magnetic pole can be improved by selecting a material that improves the crystallinity of the magnetic pole as the plating seed layer under the magnetic pole in the cavity.

Embodiments of the present invention will be described below in detail with reference to the drawings.
(First embodiment)
FIG. 1 is a cross-sectional view showing a magnetic head according to an embodiment of the present invention.

The magnetic head shown in FIG. 1 has a structure applied to, for example, a perpendicular magnetic recording system, and includes a substrate 1 made of a nonmagnetic material such as AlTiC (Al ₂ O ₃ —TiC), and alumina (Al ₂ O _3). And the like, and a magnetic recording head 20 formed on the magnetic reproducing head 10 via an insulating separation layer 3 such as alumina. Yes.

  The non-magnetic substrate 1 is processed into a slider shape by cutting and polishing after the magnetic head is formed. After the slider processing, the magnetic head composed of the magnetic reproducing head 10 and the magnetic recording head 20 is recorded on the magnetic recording medium 5. It is arranged to face the surface.

On the substrate 1, the magnetic reproducing head 10 is disposed on the leading side with respect to the magnetic recording medium 5, and the magnetic recording head 20 is disposed on the trailing side.
The reproducing magnetic head 10 includes a lower magnetic shield layer 11, an insulating gap layer 12, and an upper magnetic shield layer 14 formed in order on the insulating layer 2, and a reproducing element 13 is formed in the insulating gap layer 12. Has been.

  The lower magnetic shield layer 11 and the upper magnetic shield layer 14 are made of a magnetic material, for example, an FeNi (for example, Fe: 20 mass%, Ni: 80 mass%) alloy layer, and the insulating gap layer 12 is an insulating material such as alumina. It is composed of materials. The reproducing element 13 is connected to a pair of electrodes (not shown) formed in the insulating gap layer 12. Depending on the element structure, the lower and upper magnetic shield layers 11 and 14 are also used as a pair of electrodes. Sometimes.

As the reproducing element 13, for example, a magneto-resistance (MR) effect element, a giant magneto-resistance (GMR) effect element, or a tunneling magneto-resistance (TMR) effect element is formed.
The reproducing element 13 is formed in a region that becomes an air bearing surface (ABS surface) of the magnetic head with respect to the magnetic recording medium 5, that is, a medium facing surface.

  The magnetic recording head 20 includes a main magnetic pole 21 formed on the insulating separation layer 3, a planarized conductive layer 22 formed around the main magnetic pole 21 and magnetically separated from the main magnetic pole 21, the main magnetic pole 21 and the flat surface. The non-magnetic gap layer 23 is formed on the conductive conductive layer 22. The nonmagnetic gap layer 23 is made of either an insulating material such as alumina or a conductive material such as ruthenium (Ru). Magnetic separation means a state in which the magnetic layers are not in direct contact with each other.

A base insulating layer 24 a is formed on the nonmagnetic gap layer 23. An exciting coil 25 is formed in the insulating separation layer 3 and on the base insulating layer 24 a, and a covering insulating layer 24 b is formed on the exciting coil 25 and the base insulating layer 24.
A return yoke 26 made of a magnetic layer is formed on the trailing side of the covering insulating layer 24b, and a trading-side magnetic shield layer 27 is connected to the tip of the return yoke 26 on the ABS surface side. . As a result, the nonmagnetic gap layer 23 exists between the trading-side magnetic shield layer 27 and the tip region of the main pole 21.

Although not particularly shown, a side magnetic shield is formed on the cross track side of the main magnetic pole 21.
As shown in the perspective view of FIG. 2, the main magnetic pole 21 includes a rectangular yoke portion 21a, a tapered throttle portion 21b protruding from the yoke portion 21a to the ABS surface side, and a tip of the throttle portion 21b on the ABS surface side. It is comprised from the stripe-shaped front-end | tip part 21c which protrudes from.

  The yoke portion 21 a of the main magnetic pole 21 is magnetically connected to the return yoke 26 through a contact hole 28 formed through a substantially central gap of the exciting coil 25. The upper surface of the tip 21c has a planar shape with a width of 50 nm to 120 nm and a length of 200 nm to 250 nm, for example.

Next, the process for forming the main magnetic pole 21 will be described with reference to FIGS. 3A to 3H are process cross-sectional views as seen from the line II in FIG.
First, the insulating layer 2, the magnetic reproducing head 10, and the insulating separation layer 3 as shown in FIG.

Next, as shown in FIG. 3A, a tantalum (Ta) layer 31 having excellent corrosion resistance is formed as a nonmagnetic conductive layer on the insulating separation layer 3 to a thickness of about 200 nm, for example, by sputtering. .
Subsequently, a photoresist 32 is applied directly on the tantalum layer 31 by spin coating, and further exposed and developed to form an opening 33 as shown in FIG.

  The photoresist 32 is a material used for short-wavelength exposure, EB exposure, and the like, and is not particularly limited. However, when the tantalum layer 31 is etched through the opening 33, the photoresist 32 has a thickness that can maintain its planar shape. For example, it is formed to a thickness of 600 nm. The opening 33 is formed in substantially the same planar shape as the upper surface of the main magnetic pole 21 shown in FIG. 2, and the width of the region corresponding to the tip 21c of the main magnetic pole 21 is, for example, 50 nm to 120 nm.

  Next, as shown in FIG. 3C, the tantalum layer 31 is etched partway through the opening 33 of the photoresist 32 to form a concave cavity 34. The shape of the cavity 34 is substantially the same as that of the main magnetic pole 21 shown in FIG. In this case, the etching conditions are such that the tantalum layer 31 is left under the cavity 34 to a thickness of, for example, about 50 nm. Note that the thickness of the tantalum layer 31 under the cavity 34 is not limited to 50 nm, but may be any thickness that can be used as an electrode for electrolytic plating.

As the etching method, for example, a reactive ion etching method using CF ₄ as a reactive gas is adopted. At the time of etching, the conditions are such that both side surfaces of the cavity 34 are not perpendicular to the surface of the substrate 1, and for example, etching products are likely to adhere to both side walls during the etching and become an inverted trapezoid. Here, the inverted trapezoid is a trapezoidal shape in which the lower side near the substrate 1 is shorter than the opposite upper side among the upper and lower bases parallel to each other.

Subsequently, as shown in FIG. 3D, the photoresist 32 is removed from the tantalum layer 31 using a solvent or a dry ashing method.
Further, as shown in FIG. 3E, the magnetic layer 35 is formed on the tantalum layer 31 by electrolytic plating using the tantalum layer 31 as a plating electrode. The thickness of the magnetic layer 35 is formed so as to fill at least the inside of the cavity 34, for example, about 400 nm on the upper surface of the tantalum layer 31.
When the magnetic layer 35 is formed by electrolytic plating, a plating seed layer described in the second embodiment described later may be formed on the inner surface of the tantalum layer 31 and the cavity 34.

When the FeNi layer is formed as the magnetic layer 35, for example, the composition of Fe is 90% by mass and Ni is 10% by mass. When the FeCo layer is formed, for example, Fe is 70% by mass and Co is 30% by mass. % Composition.
By the way, the core width of the region corresponding to the tip 21 c of the main magnetic pole 21 in the cavity 34 is smaller than the value of the film thickness of the magnetic layer 35. Therefore, even if the cavity 34 is formed at a depth at which the insulating separation layer 3 is exposed, it is possible to embed the magnetic layer 35 in a region corresponding to the tip 21c by electrolytic plating.

Next, as shown in FIG. 3 (f), the magnetic layer 35 is removed from the upper surface of the tantalum layer 31 by CMP and is left in the cavity 34. In this case, the upper surfaces of the tantalum layer 31 and the magnetic layer 35 remaining in the cavity 34 are planarized.
As a result, the magnetic layer 35 left in the cavity 34 becomes the main magnetic pole 21 shown in FIGS. 1 and 2, and the tantalum layer 31 becomes the planarized conductive layer 22 shown in FIG.

  Thereafter, as shown in FIG. 3G, a nonmagnetic gap layer 23 is formed to a thickness of 40 nm to 60 nm on the main magnetic pole 21 and the planarized conductive layer 22. The nonmagnetic gap layer 23 may be made of either an insulating material such as alumina or a conductive material such as ruthenium.

Further, as shown in FIG. 3H, an alumina layer is formed on the nonmagnetic gap layer 23 as the base insulating layer 24a.
Subsequently, the exciting coil 25, the covering insulating layer 24b, the return yoke 26 and the like as shown in FIG. 1 are formed on the base insulating layer 24a by a known recording magnetic head process, thereby completing the magnetic head wafer.

  Thereafter, the substrate 1 is cut into a predetermined shape and processed to finally form a magnetic head slider. In this process, the ABS surface side of the tip 21c of the main magnetic pole 21 is polished to adjust its length.

  In the process of forming the main magnetic pole 21 and the planarized conductive layer 22 as described above, the tantalum layer 31 is formed as a layer for forming the cavity 34 for embedding the main magnetic pole 21. The tantalum layer 31 having a thickness of about 200 nm can be etched by using only the photoresist 32 as a mask without using a hard film, so that the cavity 34 can be formed. Will also improve.

  Moreover, a tantalum layer 31 that is a conductive material is formed as a film in which the cavity 34 for embedding the main magnetic pole 21 is formed. For this reason, since the tantalum layer 35 can also be used as a plating electrode, the plating seed formation step is not required, and the throughput for forming the main magnetic pole 21 is improved.

  Further, since the tantalum layer 31 is non-magnetic, it is not magnetically coupled to the main magnetic pole 21 and the return yoke 26 and does not affect the recording magnetic field generated from the main magnetic pole 21 toward the magnetic recording medium 5. Absent.

  The nonmagnetic conductive layer that can form the cavity 34 with a sufficient depth using only a photoresist as a mask without using a hard mask is not limited to the tantalum layer 31 as described above. Gold (Au), platinum (Pt), ruthenium, rhodium (Rh) and other precious metals, aluminum (Al), copper (Cu), chromium (Cr) and their alloys, or nickel phosphorus (NiP) It may be used.

(Second Embodiment)
4A to 4H are cross-sectional views showing a magnetic head forming process according to the second embodiment of the present invention, in particular, a main magnetic pole forming process, as seen from a cross section taken along the line II of FIG. FIG. 4A to 4H, the same reference numerals as those in FIGS. 3A to 3H denote the same elements.

  The magnetic head according to the present embodiment has the same structure as shown in FIG. 1, and the main magnetic pole 21 of the magnetic recording head 20 includes a yoke portion 21a, a throttle portion 21b, and a tip portion 21c, as shown in FIG. It is composed of

  In order to form the main magnetic pole 21, first, the insulating layer 2, the magnetic reproducing head 10, and the insulating separation layer 3 as shown in FIG. 1 are sequentially formed on the substrate 1 that has not been cut for slider formation. Form.

  Next, as shown in FIG. 4A, a nickel phosphorus (NiP) layer 41 having excellent corrosion resistance is formed as a nonmagnetic conductive layer on the insulating separation layer 3 to a thickness of 150 nm by sputtering or the like. . Subsequently, a photoresist 42 is applied on the NiP layer 41 by a spin coating method, and further exposed and developed to form an opening 43 as shown in FIG. 4B.

  The photoresist 42 is not particularly limited as in the first embodiment, but is formed to a thickness that can maintain a planar shape when the NiP layer 41 is etched through the opening 43, for example, 600 nm. In addition to the substantially same planar shape as the upper surface of the main pole 21 shown in FIG. 2, the opening 43 has a size that is expanded in the lateral direction by the thickness of a plating seed layer 45 described later. .

  Next, as shown in FIG. 4C, the NiP layer 41 is dry-etched through the opening 43 of the photoresist 42 to form the cavity 44. The insulating separation layer 3 appears from the bottom of the cavity 44.

A gas such as carbon monoxide (CO) or ammonia (NH ₃ ) is used as an etching gas for the NiP layer 41. At the time of etching, conditions are set such that the inner surface of the cavity 44 is not perpendicular to the upper surface of the insulating separation layer 3 but is inverted trapezoidal.

Subsequently, as shown in FIG. 4D, the photoresist 42 is removed from the tantalum layer 41 using a solvent or a dry ashing method.
Further, as shown in FIG. 4E, a nonmagnetic plating seed layer 45 is formed along the top surface of the NiP layer 41 and the side and bottom surfaces of the cavity 44. The plating seed layer 45 is formed to a thickness such that the space defined by the plating seed layer 45 in the cavity 44 is the shape of the main magnetic pole 21.

  As the plating seed layer 45, for example, a Ta layer 45a and a Ru layer 45b are sequentially formed on the upper surface of the NiP layer 41 to a thickness of 5 nm and 50 nm by sputtering. Since the Ta layer 45a has good flatness at the interface, the crystallinity of the layer formed thereon is improved.

  Next, as shown in FIG. 4F, a magnetic layer 46 such as an iron nickel (FeNi) layer or iron cobalt (FeCo) layer is plated by electrolytic plating using the plating seed layer 45 as an electrode for plating. 45 is formed.

  The magnetic layer 46 is formed to have a thickness that fills at least the inside of the cavity 44 together with the plating seed layer 45, for example, about 400 nm on the upper surface of the NiP layer 41. When the FeNi layer is formed as the magnetic layer 46, for example, the composition of Fe is 90% by mass and Ni is 10% by mass. When the FeCo layer is formed, for example, Fe is 70% by mass and Co is 30% by mass. The composition is as follows.

  Next, as shown in FIG. 4G, the magnetic layer 46 is removed from the region other than the cavity 44 by CMP. In this case, the Ru layer 45b and the Ta layer 45a constituting the plating seed layer 45 serve as a polishing stopper because the polishing rate is slower than that of the FeNi layer or the like formed as the magnetic layer 46, and the planarization and polishing selectivity of the magnetic layer 46 are achieved. Is improved.

Thereafter, CMP is further advanced to remove the magnetic layer 46 and the plating seed layer 45 from the upper surface of the NiP layer 41, and to flatten the upper surfaces of the magnetic layer 46 and the NiP layer 41.
Thereby, the magnetic layer 46 selectively left in the cavity 44 becomes the main magnetic pole 21 shown in FIGS. 1 and 2, and the NiP layer 41 becomes the planarized conductive layer 22 shown in FIG.

  Thereafter, as shown in FIG. 4 (h), a nonmagnetic gap layer 23 is formed to a thickness of 40 nm to 60 nm on the main pole 21 and the planarized conductive layer 22, and further on the nonmagnetic gap layer 23. Then, the base insulating layer 24a is formed. In this case, either an insulating layer such as alumina or a conductive layer such as ruthenium or NiP is formed as the nonmagnetic gap layer 23, and an alumina layer is formed as the base insulating layer 24a.

  Further, the magnetic recording head 20 shown in FIG. 1 is completed by the same process as shown in the first embodiment. Thereafter, the substrate 1 is cut into a predetermined shape and processed to finally form a magnetic head slider. At this time, the length of the tip 21c of the main magnetic pole 21 is adjusted by polishing.

  In the process of forming the main magnetic pole 21 and the planarized conductive layer 22 as described above, NiP that can be patterned using a photoresist as a mask without using a hard mask as a layer in which the cavity 44 for embedding the main magnetic pole 21 is formed. Since the layer 41 is formed, the time required for forming the cavity 44 is shortened. In other words, the throughput of the process of forming the main magnetic pole layer 21 and the planarized conductive layer 22 having the damascene structure shown in FIGS. 1 and 2 can be improved.

  Moreover, the NiP layer 41 in which the cavity 44 is formed is also a conductive material, and the NiP layer 41 can be used as a part of the plating electrode as it is, so that the plating seed layer formed in the cavity 44 with a small area ratio with respect to the entire substrate 1 Even if 45 is made thin, plating can be performed satisfactorily. Thereby, the formation time of the plating seed layer 45 can be made shorter than before.

  The plating seed layer 45 is not limited to the multi-layer structure as described above, and an extremely thin magnetic or nonmagnetic conductive layer of, for example, about several nm is formed in the cavity 44 as a part of the plating seed. May be.

  In the magnetic head formed as described above, since the NiP layer 41 is nonmagnetic, the NiP layer 41 is not magnetically coupled to the main magnetic pole 21 and the return yoke 26 and affects the recording magnetic field output from the main magnetic pole 21 to the magnetic recording medium 5. Absent.

  The nonmagnetic conductive layer that can form the cavity 34 to a sufficient depth by using only a photoresist as a mask without using a hard film is not limited to the NiP layer 41 as described above. Any of noble metals such as gold, platinum, ruthenium and rhodium, aluminum, copper, chromium and alloys thereof, tantalum or the like may be used, and it is preferable to select a conductive material having excellent corrosion resistance.

(Third embodiment)
FIGS. 5A to 5H are cross-sectional views showing a magnetic head forming process according to the third embodiment of the present invention, in particular, a main magnetic pole forming process, as seen from the cross section taken along the line II in FIG. FIG. 5A to 5H, the same reference numerals as those in FIGS. 3A to 3H denote the same elements.
The magnetic head according to this embodiment has the same structure as shown in FIG. 1, and the main magnetic pole 21 of the magnetic recording head 20 has the structure shown in FIG.

  In order to form the main magnetic pole 21, first, the insulating layer 2, the magnetic reproducing head 10, and the insulating separation layer 3 as shown in FIG. 1 are sequentially formed on the substrate 1 that has not been subjected to slider processing. .

Next, as shown in FIG. 5A, a magnetic material having a holding force Hc smaller than 10 Oersted (Oe) as the magnetic conductive layer 51 on the insulating separation layer 3, for example, 20 mass% Fe and 80 mass%. A NiFe layer made of Ni or a CoNiFe layer made of 67 mass% Co, 16 mass% Ni, and 17 mass% Fe is formed to a thickness of, for example, 150 nm by sputtering or the like.
Subsequently, a photoresist 52 is applied on the magnetic conductive layer 51 by a spin coating method, and further exposed and developed to form an opening 53 as shown in FIG. 5B.

  The opening 53 has a planar shape substantially the same as the top surface of the main pole 21 shown in FIG. 2, and the entire width is equal to the thickness of a nonmagnetic magnetic separation layer 55 and a plating seed layer 56 described later. The size is wide in the direction. The photoresist 52 is not particularly limited as in the first embodiment, but is formed to a thickness that allows the planar shape to be maintained when the magnetic conductive layer 51 is etched through the opening 53, for example, 600 nm. The

Next, as shown in FIG. 5 (c), the magnetic conductive layer 51 is etched through the opening 53 of the photoresist 52 to form a cavity 54, and the insulating isolation layer 3 underneath is formed through the cavity 54. ing.
Note that the cavity 54 may be formed by etching the magnetic conductive layer 51 halfway so that the insulating separation layer 3 does not appear as in the first embodiment.

For the etching of the magnetic conductive layer 51, for example, dry etching using a gas such as CO or NH ₃ as an etching gas is employed. At the time of etching, as in the second embodiment, the conditions are such that the inner surface of the cavity 54 has an inverted trapezoid.

Subsequently, the photoresist 52 is removed from the magnetic conductive layer 51 as shown in FIG.
Next, as shown in FIG. 5E, a magnetic separation layer 55 and a plating seed layer 56 are formed in this order along the top surface of the magnetic conductive layer 51 and the side surfaces and bottom surface of the cavity 54. The total thickness of the magnetic separation layer 55 and the plating seed layer 56 is set to such a value that the shape of the surface of the plating seed layer 56 in the cavity 54 becomes the shape of the main magnetic pole 21.

  The magnetic separation layer 55 is preferably made of an insulating material such as alumina, but may be made of a nonmagnetic conductive material such as Ru. Further, as the plating seed layer 56, a nonmagnetic or magnetic conductive layer, for example, a NiP layer is formed to a thickness of, for example, about several nm to 50 nm by sputtering.

Next, as shown in FIG. 5F, a magnetic layer 57 made of a magnetic material having a saturation magnetic flux density Bs larger than the magnetic conductive layer 51 is formed on the plating seed layer 56 by an electrolytic plating method.
The magnetic layer 57 is formed to have a thickness that fills at least the cavity 54 together with the plating seed layer 56 and the magnetic separation layer 55, for example, about 400 nm on the upper surface of the magnetic conductive layer 51.

  As the magnetic layer 57, for example, a magnetic material having a saturation magnetic flux density Bs of 1.8 T or more is formed by sputtering. As the magnetic material, for example, NiFe with 90 mass% Fe and 10 mass% Ni, or FeCo with 70 mass% Fe and 30 mass% Co is formed.

  Next, as shown in FIG. 5G, the magnetic layer 57 is removed from regions other than the cavity 54 by CMP. In this case, the NiP layer constituting the plating seed layer 56 has a polishing rate slower than that of the NiFe layer or FeCo layer formed as the magnetic layer 57, so that it becomes a polishing stopper, and the planarization and polishing selectivity of the magnetic layer 57 are improved. The

  Thereafter, the CMP is further advanced to remove the magnetic layer 57, the plating seed layer 56, and the magnetic separation layer 55 from the upper surface of the magnetic conductive layer 51, and to flatten the upper surfaces of the magnetic layer 57 and the magnetic conductive layer 51.

  As a result, the magnetic layer 57 selectively left in the cavity 54 becomes the main magnetic pole 21 shown in FIGS. 1 and 2, and the magnetic conductive layer 51 becomes the planarized conductive layer 22 that also functions as a magnetic shield. .

  Next, as shown in FIG. 5H, a nonmagnetic gap layer 23 is formed on the main magnetic pole 21 and the planarized conductive layer 22 to a thickness of 40 nm to 60 nm as in the second embodiment. Further, the base insulating layer 24a is formed.

  Thereafter, the magnetic recording head 20 shown in FIG. 1 is completed by the same process as shown in the first embodiment. Thereafter, the substrate 1 is cut into a predetermined shape and processed to finally form a magnetic head slider. At this time, the length of the tip 21c of the main magnetic pole 21 is adjusted by polishing.

  In the process of forming the main magnetic pole 21 and the planarized conductive layer 22 as described above, a magnetic conductive layer 51 that can be patterned using only the photoresist 52 as a mask as a layer in which the cavity 54 for embedding the main magnetic pole 21 is formed. A NiFe layer is formed. For this reason, a hard mask is not required for forming the cavity 54, and thus throughput can be improved in the process of forming the main magnetic pole layer 21 and the planarized conductive layer 22.

  In addition, when the magnetic separation layer 55 is formed from a nonmagnetic conductive material, the magnetic conductive layer 51 can be used as it is as a part of the plating electrode, so that the plating seed layer 56 formed in the cavity 54 may be thin. The formation time of the plating seed layer 56 can be made shorter than before.

The plating seed layer 56 is not limited to a single layer as described above, and may have a multi-layer structure such as a Ta layer and a Ru layer, as in the second embodiment.
Incidentally, the magnetic conductive layer 51 constituting the planarizing conductive layer 22 is a magnetic layer, and is magnetically separated from the main magnetic pole 21 by the magnetic separation layer 55 and used as a magnetic shield layer. In this case, the periphery of the tip 21c of the main pole 21 in the cavity 54 is surrounded by the magnetic shield layer 27 and the magnetic conductive layer 51 via the nonmagnetic gap layer 21 and the magnetic separation layer 55 of FIG.

  As a result, the planarized conductive layer 22 and the magnetic shield layer 27 made of a magnetic material can absorb the magnetic field leaking in the lateral direction of the main magnetic pole 21 from four directions, and suppress writing errors to adjacent tracks. It becomes possible.

(Fourth embodiment)
6A to 6G are cross-sectional views showing a magnetic head forming process according to the fourth embodiment of the present invention, in particular, a main magnetic pole forming process, as seen from a cross-section taken along the line II of FIG. It is sectional drawing which shows a formation process.

The magnetic head according to this embodiment has the same structure as shown in FIG. 1, and the final structure of the main magnetic pole 21 of the magnetic recording head 20 has the same shape as shown in FIG.
First, as shown in FIG. 1, the insulating layer 2, the magnetic reproducing head 10, and the insulating separation layer 3 are formed on the substrate 1.

Next, as shown in FIG. 6A, a nonmagnetic conductive layer 61 such as a Ta layer or a NiP layer is formed on the insulating separation layer 3 to a thickness of about 300 nm by sputtering.
Subsequently, the substrate 1 on which the nonmagnetic conductive layer 61 is formed is placed in a chamber of a focused ion beam (FIB) apparatus and placed on a wafer placement table. Subsequently, the upper and lower surfaces of the wafer mounting table are tilted at a predetermined angle θ, for example, +15 degrees with respect to the reference position. The rotation axis direction for the inclination is the longitudinal direction of the tip portion 21c of the main magnetic pole 21 to be formed later.

The reference position of the wafer mounting table is a position where the ion beam is irradiated vertically. That is, the angle of the ion beam irradiation direction with respect to the vertical direction of the wafer mounting table is equal to the inclination angle θ of the wafer mounting table.
In such a state, ions are emitted from the ion source of the FIB apparatus, and the ion beam is converged to a width of, for example, about several nm through the lens, and irradiated to the nonmagnetic conductive layer 61 as shown in FIG. 6B. And etch. In this case, the ion acceleration energy of the ion beam is set to 30 keV, for example.

  Under such conditions, the ion beam is focused on the nonmagnetic conductive layer 61 and scanned, so that a region from one side of the cavity 62 to be formed in a similar shape to the main magnetic pole 21 to the middle of the other side is formed. Form. As a result, one side surface of the cavity 62 is processed into a taper shape inclined by −15 degrees outward from the vertical direction with respect to the upper surface of the substrate 1.

  Subsequently, after returning the wafer mounting table to the reference position, as shown in FIG. 6C, the wafer mounting table is tilted, for example, by −15 degrees with respect to the reference position. Thereafter, the ion beam is again focused on the nonmagnetic conductive film 61 and scanned to etch the nonmagnetic conductive layer 61, thereby forming the remaining region of the cavity. As a result, the other side surface of the cavity 62 has a tapered shape that is inclined +15 degrees from the vertical direction to the outside of the cavity with respect to the upper surface of the substrate 1.

The scanning trajectory by the two-stage ion beam as described above is controlled by the operation unit of the FIB apparatus.
As a result, a cavity 62 is formed in the nonmagnetic conductive layer 61 as shown in FIG. Thereafter, the substrate 1 is taken out from the chamber of the FIB apparatus. The cavity 62 includes a yoke corresponding portion 62 a that stores the yoke portion 21 a of the main magnetic pole 21, a stop corresponding portion 62 b that stores the throttle portion 21 b of the main magnetic pole 21, and a tip corresponding portion 62 c that stores the tip portion 21 c of the main magnetic pole 21. And have.

  The cavity 62 has a size obtained by adding the thickness of a plating layer to be described later to the periphery of the main magnetic pole 21, and the cross-sectional shape perpendicular to the longitudinal direction of the tip corresponding portion 62c is reversed as shown in FIG. It is a trapezoid. Regarding the size of the inverted trapezoid of the tip corresponding portion 62c, for example, the length of the upper base is 100 nm, the length of the lower base is 40 nm, and the depth is 300 nm.

  Next, as shown in FIG. 6D, a plating seed layer 63 is formed along the upper surface of the nonmagnetic conductive layer 6 and the inner surface of the cavity 62. Similar to the plating seed layer 45 shown in the second embodiment, the plating seed layer 63 has, for example, a two-layer structure of a Ta layer having a thickness of 5 nm and a Ru layer having a thickness of 50 nm.

  Further, as shown in FIG. 6E, the plating seed layer 63 is used as a plating electrode, and the magnetic layer 64 is formed on the plating seed layer 63 by electrolytic plating. As in the second embodiment, the plating seed layer 63 is formed to have a thickness that fills at least the cavity 62 together with the plating seed layer 63, for example, a thickness of 300 nm.

  It is preferable to use a material having a saturation magnetic flux density of, for example, 1.8 T or more for the magnetic layer 64. Examples of such a magnetic material include an iron nickel layer containing 90% by mass of Fe and 10% by mass of Ni, or an FeCo layer containing 70% by mass of Fe and 30% by mass of Co.

  Subsequently, as shown in FIG. 6F, the magnetic layer 64 is removed from the region other than the cavity 62 by CMP. In this case, as in the second embodiment, the Ru layer and the Ta layer constituting the plating seed layer 63 serve as a polishing stopper, so that the magnetic layer 64 is flattened and the polishing selectivity is increased.

Thereafter, CMP is further advanced to remove the magnetic layer 64 and the plating seed layer 63 from the nonmagnetic conductive layer 61, and the upper surfaces of the magnetic layer 64 and the nonmagnetic conductive layer 61 are flattened. When the plating seed layer 63 is a nonmagnetic material, it may be left as it is.
As a result, the magnetic layer 64 selectively left in the cavity 62 becomes the main magnetic pole 21 shown in FIGS. 1 and 2, and the nonmagnetic conductive layer 63 becomes the planarized conductive layer 22.

  Thereafter, as shown in FIG. 6G, a nonmagnetic gap layer 23 is formed to a thickness of 40 nm to 60 nm on the main magnetic pole 21 and the planarized conductive layer 22, as in the first embodiment. Further, a base insulating layer 24 a is formed on the nonmagnetic gap layer 23.

  Further, the magnetic recording head 20 shown in FIG. 1 is completed by the same process as shown in the first embodiment. Thereafter, the substrate 1 is cut into a predetermined shape and processed to finally form a magnetic head slider. At this time, the length of the tip 21c of the main magnetic pole 21 is adjusted by polishing.

  As described above, according to this embodiment, as a method for forming the cavity 62 for embedding the main magnetic pole 21, etching is performed with an ion beam without using a hard mask. As a result, the tip corresponding portion 62c of the cavity 62 for embedding the tip portion 21c of the main pole 21 can be finely formed with high accuracy.

  Further, when the non-magnetic conductive layer 64 is irradiated with the ion beam, the taper angles on both side surfaces of the tip 21c of the main pole 21 can be easily adjusted by adjusting the relative angle between the upper surface of the wafer mounting table of the FIB apparatus and the ion beam. Can be changed to This facilitates the adjustment of the amount of protrusion of the magnetic recording medium 5 from the track on the leading side of the tip 21.

In addition, since the planarization conductive layer 22 made of the nonmagnetic conductive layer 61 functions as an electrode during electrolytic plating as in the first embodiment, the plating shield 63 in the cavity 62 having a small area ratio with respect to the entire substrate 1. Even if the layer is thinned, it can be plated well.
The nonmagnetic conductive layer 63 is not limited to the NiP layer and the Ta layer. For example, noble metals such as gold, platinum, ruthenium, and rhodium, aluminum, copper, chromium, and alloys thereof may be used.

By the way, when the cavity 62 is formed, the side surface of the cavity 62 can be tilted by controlling the ion beam irradiation time without tilting the substrate 1.
For example, as shown in FIG. 8A, when one side is inclined, the ion beam moving speed is gradually decreased while the ion beam is moved from one side toward the other side after the start of irradiation. Gradually increase the irradiation time per unit area. Thereby, the one side surface becomes a tapered surface inclined to one side.

Thereafter, in order to make the depth of the cavity 62 constant, the moving speed of the ion beam is made constant. Further, when forming the other side surface, by gradually increasing the ion beam scanning speed and gradually shortening the irradiation time in the unit area of the ion beam, as shown in FIG. Is tapered to the other side.
Thereby, a cavity 62 having the same shape as that shown in FIG. 7 is formed.

  In the magnetic head described above, the entire region of the cavity 62 in which the main magnetic pole 21 is embedded is formed by ion beam irradiation. However, the tip-corresponding portion 62c and the aperture-corresponding portion 6b, which are regions that require the most minute processing in the cavity 62, are formed by ion beam irradiation. On the other hand, the yoke corresponding portion 62a that does not require high processing accuracy compared to the tip corresponding portion 62c may be formed using a photoresist and an etching method as in the first to third embodiments.

For example, as shown in FIG. 9A, first, the yoke corresponding portion 62a of the cavity 62 is formed in the nonmagnetic conductive layer 61 by dry etching using a resist pattern. Thereafter, as shown in FIG. 9 (b), the non-magnetic conductive layer 61 is irradiated with an ion beam, the diaphragm corresponding part 62b connected to the yoke corresponding part 62a, and the tip corresponding part connected to the front end of the diaphragm corresponding part 62b. 62c is formed.
Thereby, the throughput of forming the cavity 62 can be improved by shortening the ion beam irradiation time.

(Fifth embodiment)
FIGS. 10A to 10G are cross-sectional views showing a magnetic head forming process according to the fifth embodiment of the present invention, in particular, a main magnetic pole forming process, as seen from the cross section taken along the line II in FIG. It is sectional drawing which shows the formation process.
The magnetic head according to this embodiment has the same structure as shown in FIG. 1, and the final structure of the main magnetic pole 21 of the magnetic recording head 20 has the same shape as shown in FIG.

First, as shown in FIG. 1, the insulating layer 2, the magnetic reproducing head 10, and the insulating separation layer 3 are formed on the substrate 1.
Next, as shown in FIG. 10A, a base layer 71 is formed on the insulating separation layer 3. As the underlayer 71, for example, a Ti layer 71a and a Ru layer 71b, which are nonmagnetic materials, are formed to a thickness of 50 nm by sputtering. The underlayer 71 is formed in order to improve the crystallinity of the magnetic layer formed thereon.

  Subsequently, a magnetic conductive layer 72 made of a magnetic material having a small coercive force Hc is formed on the underlayer 71 to a thickness of 300 nm by sputtering. As such a magnetic material, for example, FeNi containing 20% by mass of Fe and Ni at a rate of 80% by mass, or CoNiFe containing 67% by mass of Co, 16% by mass of Ni, and 17% by mass of Fe. Use.

  Next, as shown in FIG. 10B, the substrate 1 on which the magnetic conductive layer 72 is formed is placed in the chamber of the FIB apparatus and placed on the wafer placement table. Subsequently, the wafer mounting table is tilted +15 degrees from the reference position. The central axis direction of the inclination is the longitudinal direction of the tip portion 21 c of the main magnetic pole 21. The reference position means the same position as in the fourth embodiment.

  Next, in the FIB apparatus, ions are output from the ion source, the ion beam is converged through a predetermined lens, and the magnetic conductive layer 72 is irradiated. In this case, the ion acceleration energy of the ion beam is set to, for example, 30 keV, and the ion beam is converged to a width of, for example, about several nm by the magnetic conductive layer 72 to etch the magnetic conductive layer 72.

  Then, the ion beam is focused on the magnetic conductive layer 72 and scanned to form a region from one side to the other side of the cavity 73 to be formed in a similar shape to the main magnetic pole 21. As a result, one side surface of the cavity 73 has a taper shape inclined by −15 degrees from the vertical direction with respect to the upper surface of the substrate 1.

  Subsequently, after returning the wafer mounting table to the reference position, as shown in FIG. 10C, the wafer mounting table is tilted, for example, by −15 degrees. Thereafter, the ion beam is again focused on the magnetic conductive layer 72, scanned, and etched, whereby the remaining region of the cavity 73 is formed. As a result, the other side surface of the cavity 73 is tapered with an inclination of +15 degrees outward from the vertical direction with respect to the upper surface of the substrate 1.

The scanning trajectory by the two-stage ion beam as described above is controlled by the operation unit of the FIB apparatus.
As a result, a cavity 73 having the same shape as that shown in FIG. 7 is formed in the magnetic conductive layer 72. Thereafter, the substrate 1 is taken out from the chamber of the FIB apparatus.

The cavity 73 has a size obtained by adding the thickness of a plating seed layer and a nonmagnetic layer, which will be described later, around the main magnetic pole 21. Moreover, the cross-sectional shape orthogonal to the longitudinal direction of the front end portion 21c of the main magnetic pole 21 is an inverted trapezoid. The size of the inverted trapezoid in the region where the tip 21c of the main pole 21 is formed is, for example, that the length of the upper base is 100 nm, the length of the lower base is 40 nm, and the depth is 300 nm.
Next, as shown in FIG. 10D, a nonmagnetic insulating layer 74 and a plating seed layer 75 are sequentially formed along the upper surface of the magnetic conductive layer 72 and the inner surface of the cavity 73.
As the nonmagnetic insulating layer 74, for example, an alumina layer is formed to a thickness of 20 nm by sputtering. Further, as the plating seed layer 75, for example, a Ta layer having a thickness of 5 nm, a Ru layer having a thickness of 25 nm, and a NiFe layer having a thickness of 5 nm are sequentially formed by sputtering.

  Next, as shown in FIG. 10E, the magnetic layer 76 is formed on the plating seed layer 75 by pulse plating using the plating seed layer 75 as a plating electrode. The magnetic layer 76 is formed to have a thickness that fills at least the inside of the cavity 73 together with the plating seed layer 75, for example, a thickness of 400 nm.

It is preferable to employ a material having a saturation magnetic flux density of, for example, 1.8 T or more as the magnetic layer 76. As such a magnetic material, for example, an FeCo layer containing 70 mass% Fe and 30 mass% Co is used.
Subsequently, as shown in FIG. 10 (f), the magnetic layer 76 is polished by CMP until the plating seed layer 75 is exposed from a region other than the cavity 73, and the magnetic layer 76 and the plating seed layer 75 are further removed except for the cavity 73. Remove from the area. In this case, since the alumina layer constituting the nonmagnetic insulating layer 74 serves as a polishing stopper, the flatness of the magnetic layer 76 is improved and the polishing selectivity is increased.

  Thereby, the magnetic layer 76 selectively left in the cavity 73 of the magnetic conductive layer 72 via the nonmagnetic insulating layer 74 and the plating seed layer 75 becomes the main magnetic pole 21 shown in FIGS. The layer 72 becomes the planarized conductive layer 22. In this embodiment, unlike FIG. 1, the nonmagnetic insulating layer 74 is formed on the planarized conductive layer 22 and remains.

Thereafter, as shown in FIG. 10G, the nonmagnetic gap layer 23 is formed to a thickness of 40 nm to 60 nm on the main magnetic pole 21 and the nonmagnetic insulating layer 74, and further on the nonmagnetic gap layer 23. Then, the base insulating layer 24a is formed.
Further, the magnetic recording head 20 shown in FIG. 1 is completed by the same process as shown in the fourth embodiment. Thereafter, the substrate 1 is cut into a predetermined shape and processed to finally form a magnetic head slider. At this time, the length of the tip 21c of the main magnetic pole 21 is adjusted by polishing.

  As described above, according to the present embodiment, in the process of forming the main magnetic pole 21 and the planarized conductive layer 22, as a method for forming the cavity 73 for embedding the main magnetic pole 21, etching is performed with an ion beam without using a hard mask. I am doing so. As a result, similarly to the fourth embodiment, the cavity 73 in which the tip 21c of the main magnetic pole 21 is embedded can be finely formed with high accuracy. Further, as in the fourth embodiment, the taper angles on both side surfaces of the tip 21c of the main pole 21 can be easily changed.

  Moreover, since the planarizing conductive layer 22 is formed from the magnetic conductive layer 72, the magnetic shield layer is formed as the planarizing conductive layer 22 magnetically separated from the main magnetic pole 21 by the nonmagnetic insulating layer 74, as in the third embodiment. Can be used. In this case, the periphery of the tip 21c of the main pole 21 in the cavity 73 is surrounded by the magnetic shield layer 27 and the magnetic conductive layer 72 (flattened conductive layer 22) via the nonmagnetic gap layer 21 and the nonmagnetic insulating layer 74 of FIG. It will be in a state surrounded by.

Therefore, the planarized conductive layer 22 and magnetic shield layer 27 made of a magnetic material can absorb the magnetic field leaking in the lateral direction of the main magnetic pole 21 from four directions, and suppress writing errors to adjacent tracks. It becomes possible.
By the way, as the formation method of the cavity 73 according to the present embodiment, the ion beam irradiation time to the substrate 10 is adjusted in a state where the wafer mounting table is installed at the reference position in the FIB apparatus, as in the fourth embodiment. Thus, both sides can be tapered.

In addition, as a method for forming the cavity 73 according to the present embodiment, the yoke corresponding portion of the cavity 73 is formed using a photoresist and an etching method as in the fourth embodiment, and the aperture corresponding portion and the tip corresponding portion are formed. May be formed by an ion beam.
The depths of the cavities 62 and 73 formed in the fourth and fifth embodiments are set in the middle of the nonmagnetic conductive layer 61 or the magnetic conductive layer 72, that is, the insulating separation layer 3 as in the first embodiment. You may form in the depth which is not exposed. Thereby, the nonmagnetic conductive layer 61 or the magnetic conductive layer 72 can be used for a plating electrode, and a plating seed layer can be omitted.
In each of the first to fifth embodiments, when electrolytic plating is performed, a region other than the cavity may be covered with a photoresist. The cross-sectional shape of the main magnetic pole tip may be an inverted triangle.

  The embodiment described above is merely given as a typical example, and it is obvious for those skilled in the art to combine the components or modifications and variations thereof, and those skilled in the art will describe the principle of the present invention and the claims. Obviously, various modifications of the above-described embodiments can be made without departing from the scope of the invention as described above.

Hereinafter, embodiments of the present invention will be further described.
(Appendix 1)
Forming a conductive layer on the underlayer;
Forming a resist mask having an opening directly on the conductive layer;
Forming a cavity in the conductive layer by etching the conductive layer at least halfway through the opening of the resist mask; and
Removing the resist mask from the conductive layer;
Using the conductive layer as an electrode for plating, and forming a magnetic layer magnetically separated from the conductive layer in the cavity and on the conductive layer by electrolytic plating;
Removing the magnetic layer from the upper surface of the conductive layer, thereby making the magnetic layer left in the cavity a magnetic pole;
A method of manufacturing a magnetic head, comprising:
(Appendix 2)
Forming a conductive layer on the underlayer;
Forming a cavity in the conductive layer by removing it by ion beam irradiation to at least the middle of the layer thickness of the conductive layer;
Using the conductive layer as an electrode for plating, and forming a magnetic layer magnetically separated from the conductive layer in the cavity and on the conductive layer by electrolytic plating;
Removing the magnetic layer from the upper surface of the conductive layer, thereby making the magnetic layer left in the cavity a magnetic pole;
A method of manufacturing a magnetic head, comprising:
(Appendix 3)
3. The method of manufacturing a magnetic head according to appendix 2, wherein the ion beam irradiation direction is inclined from a direction perpendicular to the upper surface of the conductive layer.
(Appendix 4)
The method of manufacturing a magnetic head according to appendix 3, wherein the direction of the ion beam irradiation is changed during the formation of the cavity.
(Appendix 5)
5. A method of manufacturing a magnetic head according to any one of appendices 2 to 4, wherein a part of the cavity is formed by etching using a photoresist.
(Appendix 6)
6. The method of manufacturing a magnetic head according to claim 5, wherein the magnetic pole is a main magnetic pole, and a region of the cavity where the yoke portion of the main magnetic pole is embedded is formed by the etching.
(Appendix 7)
The magnetic material according to any one of appendices 1 to 6, further comprising a step of forming a plating seed layer along the inner surface of the cavity and the upper surface of the conductive layer before forming the magnetic layer. Method for forming the head.
(Appendix 8)
The method for forming a magnetic head according to appendix 7, wherein the conductive layer is made of a magnetic material, and the plating seed layer is made of a nonmagnetic conductive material.
(Appendix 9)
A conductive layer in which a cavity is formed;
A magnetic pole formed in the cavity and magnetically separated from the conductive layer;
An excitation part formed on at least one of the upper and lower sides of the magnetic pole via a first insulating layer;
A magnetic layer formed on the excitation part via a second insulating layer and magnetically coupled to the magnetic pole;
A magnetic head comprising:
(Appendix 10)
A conductive layer in which a cavity is formed; a magnetic pole formed in the cavity and magnetically separated from the conductive layer; and an excitation formed through a first insulating layer at least above or below the magnetic pole And a magnetic head formed on the excitation portion via a second insulating layer and magnetically coupled to the magnetic pole,
A magnetic recording medium disposed to face the magnetic head;
A magnetic recording apparatus comprising:

FIG. 1 is a cross-sectional view showing a magnetic head according to an embodiment of the present invention. FIG. 2 is a perspective view showing the main pole applied to the magnetic recording head in the magnetic head according to the embodiment of the present invention. 3A to 3H are cross-sectional views showing the main magnetic pole forming process of the magnetic recording head according to the first embodiment of the invention. 4A to 4H are cross-sectional views showing a main magnetic pole forming step of the magnetic recording head according to the second embodiment of the present invention. 5A to 5H are cross-sectional views showing the main magnetic pole forming process of the magnetic recording head according to the third embodiment of the invention. FIGS. 6A to 6G are cross-sectional views showing the formation process of the main pole applied to the magnetic head according to the fourth embodiment of the present invention. FIG. 7 is a perspective view showing a cavity in which the main magnetic pole of the magnetic head according to the embodiment of the present invention is embedded. FIGS. 8A and 8B are cross-sectional views showing another example of the formation process of the cavity in which the main magnetic pole of the magnetic head according to the fourth embodiment of the present invention is embedded. FIGS. 9A and 9B are perspective views showing still another formation process of the cavity in which the main magnetic pole of the magnetic head according to the fourth embodiment of the present invention is embedded. FIGS. 10A to 10G are cross-sectional views showing the formation process of the main pole applied to the magnetic head according to the fifth embodiment of the invention. FIGS. 11A to 11H are cross-sectional views showing a main magnetic pole forming process of the magnetic recording head according to the reference.

Explanation of symbols

1 Substrate 2 Insulating layer 3 Insulating separation layer (underlayer)
5 Magnetic recording medium 10 Magnetic reproducing head 20 Magnetic recording head 21 Main magnetic pole 22 Flattened conductive layer 23 Nonmagnetic gap layer 24a Underlying insulating layer 24b Covering insulating layer 25 Excitation coil 26 Return yoke 27 Magnetic shield layer 31 Tantalum layer 32 Photoresist Resist pattern)
33 Opening 34 Cavity 35 Magnetic Layer 41 Nickel Phosphorus Layer 42 Photoresist (Resist Pattern)
43 Opening 44 Cavity 45 Plating seed layer 46 Magnetic layer 51 Magnetic conductive layer 52 Photoresist (resist pattern)
53 Opening 54 Cavity 55 Magnetic Separation Layer 56 Plating Seed Layer 57 Magnetic Layer 61 Nonmagnetic Conductive Layer 62 Cavity 63 Plating Seed Layer 64 Magnetic Layer 71 Underlayer 72 Magnetic Conductive Layer 73 Cavity 74 Nonmagnetic Insulating Layer 75 Plating Seed Layer 76 Magnetic layer

Claims (5)

Forming a conductive layer on the underlayer;
Forming a resist mask having an opening directly on the conductive layer;
Forming a cavity in the conductive layer by etching the conductive layer at least halfway through the opening of the resist mask; and
Removing the resist mask from the conductive layer;
Using the conductive layer as an electrode for plating, and forming a magnetic layer magnetically separated from the conductive layer in the cavity and on the conductive layer by electrolytic plating;
Removing the magnetic layer from the upper surface of the conductive layer, thereby making the magnetic layer left in the cavity a magnetic pole;
A method of manufacturing a magnetic head, comprising: Forming a conductive layer on the underlayer;
Forming a cavity in the conductive layer by removing it by ion beam irradiation to at least the middle of the layer thickness of the conductive layer;
Using the conductive layer as an electrode for plating, and forming a magnetic layer magnetically separated from the conductive layer in the cavity and on the conductive layer by electrolytic plating;
Removing the magnetic layer from the upper surface of the conductive layer, thereby making the magnetic layer left in the cavity a magnetic pole;
A method of manufacturing a magnetic head, comprising:   2. The method according to claim 1, further comprising: forming a plating seed layer along the inner surface of the cavity and the upper surface of the conductive layer formed at a depth at which the underlayer is exposed before forming the magnetic layer. A method of forming a magnetic head according to claim 1. A conductive layer in which a cavity is formed;
A magnetic pole formed in the cavity and magnetically separated from the conductive layer;
An excitation part formed on at least one of the upper and lower sides of the magnetic pole via a first insulating layer;
A magnetic layer formed on the excitation part via a second insulating layer and magnetically coupled to the magnetic pole;
A magnetic head comprising: A conductive layer in which a cavity is formed; a magnetic pole formed in the cavity and magnetically separated from the conductive layer; and an excitation formed through a first insulating layer at least above or below the magnetic pole And a magnetic head formed on the excitation portion via a second insulating layer and magnetically coupled to the magnetic pole,
A magnetic recording medium disposed to face the magnetic head;
A magnetic recording apparatus comprising:

Images