JP2009126724A - Member for silicon carbide joined structure, and joining method for member for silicon carbide joined structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a member for silicon carbide joined structure, wherein when a member for joined structure consisting silicon carbide is joined with a silicon carbide-containing joining agent, a string-shaped liquid introduction member can be easily and securely fitted to the vicinity of the joining part therein, and also, the string-shaped liquid introduction member can be easily cut after the joining operation, and to provide a joining method for a member for silicon carbide joined structure. <P>SOLUTION: The member 11 for silicon carbide joined structure is provided with a holding member 11b holding a string-shaped liquid introduction member 21 for introducing the metal silicon for sintering treatment into the joining part, in the vicinity of the joining part to be joined with the other member 12 for silicon carbide joined structure by sintering treatment using the silicon carbide-containing joining agent 14. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a silicon carbide bonding structure member and a method for bonding a silicon carbide bonding structure member.

  Silicon carbide has characteristics such as excellent high-temperature strength, heat resistance and oxidation resistance, and good thermal conductivity and electrical conductivity. Therefore, members made of silicon carbide are used for heaters and various jigs.

A heater and various jigs using a silicon carbide member have a structure in which a plurality of silicon carbide members are combined according to a required structure. For example, there is a structure in which a silicon carbide heater and a silicon carbide electrode are joined together. Regarding a method for joining silicon carbide members for producing such a silicon carbide structure, a metal paste is filled in a gap between one member to be joined and the other member, and then filled with a paste of a bonding agent containing silicon carbide powder. There is a method of performing sintering by impregnating silicon (Patent Document 1).
JP 2002-124364 A

  When bonding a plurality of silicon carbide members by the above-described method, a paste of a bonding agent is formed in advance in a region to be a bonding portion of these members, and after assembling each member, a liquid is added to the bonding portion. Lead metal silicon and sinter. In order to guide the liquid metal silicon to the joint, a string-like liquid introducing member such as a carbon string is prepared, and one end of the string-like liquid introducing member is melted in a heating container. After immersing in and bonding the other end to the joint portion of the silicon carbide member, metal silicon is guided from the heating container to the joint portion of the silicon carbide member by the capillary phenomenon of the string-like liquid introduction member. However, the operation | work which adhere | attaches the edge part of a string-like liquid introduction member to the junction part of a silicon carbide member has taken the effort and time. In addition, after the sintering process, the string-like liquid introduction member that is no longer necessary is cut and removed using a cutting tool, but this cutting tool may cause wrinkles in the vicinity of the joint portion of the silicon carbide member. The appearance could be damaged.

  The present invention advantageously solves the above problems, and when joining a bonding structure member made of silicon carbide with a bonding agent containing silicon carbide, the string-like liquid introduction member is bonded to the bonding structure member. Provided is a silicon carbide bonding structure member and a method for bonding a silicon carbide bonding structure member that can be easily and reliably attached to the vicinity of the portion and that can easily cut off the string-like liquid introduction member after the bonding operation. The purpose is to do.

  The silicon carbide bonding structure member of the present invention is a silicon carbide bonding structure member made of silicon carbide, and is bonded to another silicon carbide bonding structure member by a sintering process using a bonding agent containing silicon carbide. In the vicinity of the joint, a holding member is provided for holding a string-like liquid introduction member for guiding the metal silicon for sintering treatment to the joint.

  The holding member for the silicon carbide bonding structure member of the present invention can have a U-shape that sandwiches the string-like liquid introduction member. The holding member is preferably made of silicon carbide and formed integrally with the silicon carbide bonding structure member. Furthermore, it is preferable that the holding member is formed to protrude outward from the silicon carbide bonding structure member, and a connection portion having a width narrower than that of the holding member is provided between the holding member and the silicon carbide bonding structure member.

  The silicon carbide bonding structure member bonding method of the present invention is a method of bonding a first silicon carbide bonding structure member and a second silicon carbide bonding structure member by a sintering process of the bonding portion between the two. Further, at least one of the first silicon carbide bonding structure member and the second silicon carbide bonding structure member is configured to introduce metal silicon for sintering treatment to the bonding portion in the vicinity of the bonding portion. Using a member having a holding member for holding the string-like liquid conducting member, a bonding agent containing silicon carbide is formed at the joint portion of these silicon carbide bonding structure members, and the holding member is made to hold the string-like liquid conducting member. After that, the first silicon carbide bonding structure member and the second silicon carbide bonding structure member are bonded by a sintering process for guiding the metal silicon to the bonding portion through the string-like liquid transfer member, and then the silicon carbide bonding structure Excise the holding member The features.

  According to the silicon carbide bonding structure member of the present invention, when joining a plurality of silicon carbide bonding structure members, a string-like liquid guiding member that guides metal silicon to the bonding portion is easily and reliably attached to the vicinity of the bonding portion. Therefore, workability is improved. Moreover, it becomes possible to easily cut and remove the string-like liquid introduction member after joining.

According to the bonding method of the silicon carbide bonding structure member of the present invention, a bonding structure made of silicon carbide can be bonded in a short bonding time, and wrinkles are generated on the surface of the bonded structure after bonding. Can be prevented.

  FIG. 1 is a plan view of an example of a silicon carbide bonded structure using a silicon carbide bonded structure member according to an embodiment of the present invention. However, the silicon carbide bonding structure member of the present invention is not limited to that used for the silicon carbide bonding structure shown in FIG.

  The silicon carbide bonded structure shown in FIG. 1 is a heater structure, which is a silicon carbide heater member 11 having an annular portion, a silicon carbide electrode member 12 bonded to the silicon carbide heater member 11, and the carbonized members. The nut 13 is made of silicon carbide for fixing the silicon heater member 11 and the silicon carbide electrode member 12. FIG. 2 is a sectional view taken along line II-II in FIG. In FIG. 2, the silicon carbide heater member 11 has a terminal portion 11a joined to the silicon carbide electrode member 12, and is combined so that the upper end portion of the silicon carbide electrode member 12 protrudes through a groove formed in the terminal portion 11a. The silicon carbide heater member 11 and the silicon carbide electrode member 12 are fixed by screwing the nut 13 to the screw formed on the upper end portion of the silicon carbide electrode member 12. Furthermore, a bonding agent 14 containing silicon carbide is formed at the joint between the silicon carbide heater member 11 and the silicon carbide electrode member 12, and the bonded structure is obtained by introducing metal silicon into the bonding agent and sintering it. It has become.

  In assembling the heater structure shown in FIGS. 1 and 2, the silicon carbide heater member 11 as the first silicon carbide bonding structure member prepared in advance is shown in FIG. 3 as an enlarged view in the vicinity of the terminal portion 11a. In addition, a holding member 11 b for holding the string-like liquid introduction member 21 is provided in the vicinity of the joint portion with the silicon carbide electrode member 12. In the silicon carbide heater member 11 of this embodiment shown in FIG. 3, the holding member 11 b has an appropriate size according to the diameter of the string-like liquid introducing member 21 in order to sandwich the string-like liquid introducing member 21. It has a U shape with an opening. The holding member 11 b is made of silicon carbide and is formed integrally with the silicon carbide heater member 11. Further, the holding member 11b is formed so as to protrude from the terminal portion 11a of the silicon carbide heater member 11, and a connecting portion 11c having a width narrower than the width of the holding member 11b is provided between the holding member 11b and the silicon carbide heater member 11. ing.

  FIG. 4 is a perspective view showing a place where the string-like liquid introduction member 21 is held between the holding members 11b. As shown in FIG. 4, the tip end portion of, for example, a carbon string as the string-like liquid introducing member 21 is sandwiched inside the U-shape of the holding member 11 b.

  Since the silicon carbide heater member 11 of the present embodiment includes the holding member 11b, the string-like liquid introduction member 21 can be connected to the silicon carbide heater member 11 simply by sandwiching the string-like liquid introduction member 21 between the holding members 11b. It can be reliably fixed in the vicinity of the junction with the silicon carbide electrode member 12. Therefore, the operation | work which adheres in order to fix the string-like liquid introduction member 21 like a prior art is unnecessary, and the string-like liquid introduction member 21 can be attached easily.

  Further, the holding member 11b is formed so as to protrude from the terminal portion 11a, and when the string-like liquid introduction member 21 is removed after joining by the sintering process, the holding member 11b is cut from the connecting portion 11c using a cutting tool. Since the string-like liquid introduction member 21 can be removed together with the holding member 11b, it is possible to avoid wrinkling in the vicinity of the joint portion of the silicon carbide member.

  The shape of the holding member 11b is not particularly limited as long as it can fix the string-like liquid introduction member 21. What has the U-shaped planar shape shown in FIG. 3 is a simple shape. As for the direction of the opening of the U-shaped holding member 11b, the direction shown in FIG. 3 is an example, and the direction may be different. Further, the fixing means of the string-like liquid introducing member 21 by the holding member 11b is not limited to the clamping by the U-shaped shape shown in FIG. Any means can be used.

  The holding member 11b may be formed separately from the silicon carbide heater member 11 and fixed to the silicon carbide heater member 11 by bonding or the like. However, productivity is improved by forming the holding member 11b integrally with the silicon carbide heater member 11. To do. Therefore, the holding member 11b is preferably made of silicon carbide, which is the same material as the silicon carbide heater member 11.

  The provision of the connecting portion 11c having a width narrower than that of the holding member 11b between the holding member 11b and the silicon carbide heater member 11 allows the blade of the cutting tool to be used when removing the string-like liquid introduction member 21 after the sintering process. Since the cutting is applied to the connecting portion 11c, the blade of the cutting tool can be reliably guided to the connecting portion 11c, and thus the surface of the silicon carbide heater member 11 is wrinkled by careless operation of the cutting tool. Can be avoided. Moreover, since the connection part 11c is narrow means that the cutting area by the cutting tool is small, the cutting work time is compared with the case where the connection part 11c has the same width or wide as the holding member 11b. Can be shortened, and the working efficiency can be improved. The width of the connecting portion 11c can be appropriately determined so as to have at least a strength that does not cause a crack or the like during processing or handling.

  An example of the bonding method of the silicon carbide bonding structure member according to the present embodiment will be described taking the bonding of the silicon carbide heater member 11 and the silicon carbide electrode member 12 shown in FIGS.

  FIG. 5 is a flow diagram of a method for bonding silicon carbide bonding structure members according to an embodiment of the present invention. The joining method will be described with reference to the flowchart of FIG. 5. First, a silicon carbide joining structure member to be joined is created (step S11). The production of the silicon carbide bonding structure member is performed by sintering a mixture of silicon carbide powder and a nonmetallic sintering aid as described in JP-A-10-67565 and JP-A-11-79840. It can be performed by the method to do. According to this method, a high-purity silicon carbide sintered body can be obtained.

  In the present embodiment, among the silicon carbide heater member 11 as the first silicon carbide bonding structure member and the silicon carbide electrode member 12 as the second silicon carbide bonding structure member, the former silicon carbide heater member 11 is A thing provided with the holding member 11b is created. The holding member 11b can be formed by electric discharge machining or the like so as to be formed integrally with the silicon carbide heater member 11.

  Next, the bonding paste as the bonding agent 14 is applied to the region that becomes the bonded portion between the silicon carbide heater member 11 and the silicon carbide electrode member 12 that has been created (step S12). Next, the silicon carbide heater member 11 and the silicon carbide electrode member 12 are assembled, and both are fastened and fixed by the nut 13. Next, the joining slurry as the joining agent 14 is applied around the joint portion of the nut 13 and the silicon carbide heater member 11 and from the periphery of the joint portion to the holding member 11b. The application area | region of joining slurry is shown as the bonding agent 14 in FIG.

  The bonding slurry may be applied by brushing, but it is preferable to remove the mask after forming a mask in a region other than the bonding slurry application region from the viewpoint of application reliability and product aesthetics.

  Further, the bonding slurry and the bonding paste as the bonding agent 14 both contain silicon carbide powder and, if necessary, a carbon component, and are disclosed in Japanese Patent Application Laid-Open No. 2002-124364. In addition, a well-known thing can be used.

  Next, one end of the string-like liquid introduction member 21 is attached to the holding member 11b of the silicon carbide heater member 11 (step S13). For this attachment, it is sufficient to simply hold the string-like liquid introduction member 21 between the holding members 11b. The string-like liquid introducing member 21 is, for example, a carbon string.

  Next, the other end of the string-like liquid introduction member 21 is immersed in a liquid of metallic silicon melted in the crucible. Then, the metal silicon is guided from one end immersed in the crucible to the other end sandwiched by the holding member 11b by the capillary phenomenon of the string-like liquid introduction member 21, and further from the holding member 11b. It is guided to the joining portion of the silicon carbide heater member 11, the silicon carbide electrode member 12 and the nut 13 through the joining paste.

  By introducing and impregnating metal silicon into these joints, molten metal silicon is sucked up into pores in the bonding agent, and impregnated with carbon contained in the bonding agent or carbon source prior to impregnation of metal silicon. A sintering process is performed in which silicon carbide is produced by reactive sintering with carbon present in the bonding agent (step S14). When this silicon carbide is generated at the joint, the voids at the joint of the silicon carbide heater member 11, the silicon carbide electrode member 12, and the nut 13 are filled, and these members are joined. About such a joining method, it describes in Unexamined-Japanese-Patent No. 2000-124364, and it can join according to the description of the said gazette.

  After joining, the blade of a cutting tool is applied to the connection part 11c of the silicon carbide heater member 11, and the holding member 11b is cut and removed together with the string-like liquid introduction member 21 (step S15). Since the cutting tool does not need to hit the terminal part 11a of the silicon carbide heater member 11 at the time of this removal, the terminal part 11a is not wrinkled by the cutting tool as already described.

  For comparison with the bonding method of the present embodiment described above, a conventional bonding method will be described. FIG. 6 is a perspective view of a bonded portion of a silicon carbide bonded structure member and a main portion in the vicinity thereof for explaining a conventional bonding method. The same members as those in FIGS. Yes. The silicon carbide heater member 101 is different from the silicon carbide heater member 11 according to the embodiment of the present invention in that the holding member 11b is not provided. The silicon carbide heater member 101 and the silicon carbide electrode member 12 are fastened and fixed to the nut 13 and further joined by a sintering process using a bonding agent containing silicon carbide.

  Therefore, before joining, one end portion of the string-like liquid conducting member 21 for guiding the metal silicon 23 melted in the crucible 22 to the joining portion between the silicon carbide heater member 101 and the silicon carbide electrode member 12. Was bonded to the vicinity of the connecting portion between the silicon carbide heater member 101 and the silicon carbide electrode member 12.

  Further, after joining, as shown in a perspective view of the main part in the vicinity of the joint in FIG. 7, the string-like liquid introduction member 21 is cut off in the vicinity of the surface of the silicon carbide heater member 101 using the cutting tool 30. It was. Therefore, the blade of the cutting tool 30 accidentally comes into contact with the surface of the silicon carbide heater member 101 during the excision work, and a ridge S may occur as shown in a perspective view of the main part near the joint in FIG. .

  Compared with the conventional joining method described above, the joining method according to the present embodiment significantly shortens the attachment time of the string-like liquid conducting member 21 before joining and the removal time of the string-like liquid conducting member 21 after joining. As a result, the total joining time was reduced by 28% compared to the conventional joining method.

  Moreover, the joining structure joined by the joining method according to the present embodiment did not generate wrinkles due to the cutting tool 30, and a beautiful appearance was obtained.

  As described above, the silicon carbide bonding structure member and the bonding method thereof according to the present embodiment have been described according to the drawings. However, the silicon carbide bonding structure member and the bonding method of the present invention are not limited to the drawings and the embodiments. It goes without saying that various modifications are possible without departing from the spirit of the present invention. For example, in the bonded structure shown in FIGS. 1 to 4, the silicon carbide heater member 11 has the holding member 11 b, but in another bonded structure, each of a plurality of silicon carbide bonded structure members You may comprise a holding member.

It is a top view of an example of the silicon carbide junction structure using the member for silicon carbide junction structure concerning an embodiment of the invention. It is sectional drawing of the II-II line view of FIG. It is an enlarged view of the terminal part 11a vicinity. It is a figure explaining the place which made the holding member clamp the string-like liquid introduction member. It is a flowchart of the joining method of the member for silicon carbide junction structure concerning the embodiment of the present invention. It is a perspective view of the principal part of the junction part of the conventional silicon carbide junction structure member, and its vicinity. It is a perspective view of the principal part near a junction part. It is a perspective view of the principal part near a junction part.

Explanation of symbols

11 Silicon carbide heater member 11
11a Terminal portion 11b Holding member 11c Connection portion 12 Silicon carbide electrode member 12
13 Nut 13
14 Bonding agent 21 String-shaped liquid introduction member

Claims (5)

  A silicon carbide bonding structure member made of silicon carbide, which is used in the vicinity of a bonding portion to be bonded to another silicon carbide bonding structure member by a sintering process using a bonding agent containing silicon carbide. A silicon carbide bonding structure member comprising a holding member for holding a string-like liquid introduction member for guiding the metal silicon of the metal to the bonding portion.   2. The silicon carbide bonding structure member according to claim 1, wherein the holding member has a U-shape that sandwiches the string-like liquid introduction member.   3. The silicon carbide bonding structure member according to claim 1, wherein the holding member is made of silicon carbide and is formed integrally with the silicon carbide bonding structure member. 4.   The holding member is formed to protrude outward from the silicon carbide bonding structure member, and includes a connecting portion having a narrower width than the holding member between the holding member and the silicon carbide bonding structure member. The silicon carbide bonding structure member according to any one of claims 1 to 3. A first silicon carbide bonding structure member and a second silicon carbide bonding structure member are bonded by a sintering process of both bonding portions,
At least one of the first silicon carbide bonding structure member and the second silicon carbide bonding structure member has a string shape for guiding metal silicon for sintering treatment to the bonding portion in the vicinity of the bonding portion. Use one with a holding member that holds the liquid guiding member,
A bonding agent containing silicon carbide is formed at the joint portion of these silicon carbide bonding structural members, and the string-shaped liquid introduction member is held by the holding member, and then the metal silicon is introduced into the bonding section through the string-shaped liquid conveyance member. Bonding the first silicon carbide bonding structure member and the second silicon carbide bonding structure member by a bonding process;
Thereafter, the holding member for the silicon carbide bonding structure member is excised, and the method for bonding the silicon carbide bonding structure member.

Images