JP2009100009A - Oscillator, and oscillating device having the same - Google Patents

Oscillator, and oscillating device having the same Download PDF

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JP2009100009A
JP2009100009A JP2007266459A JP2007266459A JP2009100009A JP 2009100009 A JP2009100009 A JP 2009100009A JP 2007266459 A JP2007266459 A JP 2007266459A JP 2007266459 A JP2007266459 A JP 2007266459A JP 2009100009 A JP2009100009 A JP 2009100009A
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oscillator
temperature
correction
compressive stress
vibrating piece
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JP5105279B2 (en
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Ryuta Mitsusue
Hiroshi Takahashi
Masaru Tomimatsu
竜太 光末
大 富松
寛 高橋
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Seiko Instruments Inc
セイコーインスツル株式会社
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Abstract

<P>PROBLEM TO BE SOLVED: To highly accurately and efficiently correct a temperature characteristic while simplifying configuration. <P>SOLUTION: An oscillator 30 includes: a vibrator 32 including a vibration piece 36 which is formed so as to be extended in an X direction and vibrates in a Y direction perpendicular to the X direction, extension parts 37 which are branched from the vibration piece 36 in the Y direction and each extended by the same length and a vibrator island 34 for supporting the vibration piece 36 in a cantilevered manner; a drive electrode 33a and a detection electrode 33b which are arranged so as to sandwich the vibration piece 36 between both electrodes while each separated from the vibration piece 36 by a prescribed distance, the drive electrode 33a generating electrostatic attraction when a drive voltage is applied thereto and vibrating the vibration piece; and correction electrodes 38a, 38b which are arranged oppositely to the pair of extension parts 37 while forming gaps g from respective extension parts 37 and generate electrostatic attraction when a correction voltage is applied thereto to attract respective extension parts 37 and to apply compression stress in the X direction to the vibration piece 36. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、MEMS技術を利用した発振子及び該発振子を有する発振器に関する。   The present invention relates to an oscillator using MEMS technology and an oscillator having the oscillator.

デジタル機器のクロックパルス発生や、無線機器などにおいては、従来水晶発振子を用いた水晶発振器が利用されてきたが、より量産性が高く周波数の設計も容易なシリコンを採用したシリコン発振子を用いて発振器を製造しようという試みがなされている。   Conventionally, crystal oscillators using crystal oscillators have been used for clock pulse generation in digital devices and wireless devices. However, silicon oscillators that use silicon, which is more mass-productive and easier to design frequencies, are used. Attempts have been made to manufacture oscillators.

このシリコン発振子は、振動子アイランド(ベース部)に片持ち状または両持ち状に振動可能に支持された振動片の共振モードを利用するものであって、半導体プロセスを利用するMEMS(Micro Electro Mechanical System)技術によって作製される。特に、共振周波数は、振動片の断面サイズや長さによって規定されるため設計が容易である。また、半導体プロセスを利用するので、1つのウエハに一括して素子を形成することができる。そのため、加工精度の高さ、電子回路と機械的構造とを一体成形することで精密な動作制御が可能等といった利点がある。また、量産が容易であるので、従来のCMOS ICの製造ラインを流用して製造することも可能である。   This silicon oscillator uses a resonance mode of a resonator element supported on a resonator island (base portion) so as to be able to vibrate in a cantilevered manner or a cantilevered manner, and is a MEMS (Micro Electro) utilizing a semiconductor process. Fabricated by Mechanical System) technology. In particular, since the resonance frequency is defined by the cross-sectional size and length of the resonator element, the design is easy. In addition, since a semiconductor process is used, elements can be formed on one wafer at a time. Therefore, there are advantages such as high machining accuracy and precise operation control by integrally forming the electronic circuit and the mechanical structure. Moreover, since mass production is easy, it is also possible to manufacture by using a conventional CMOS IC manufacturing line.

しかしながら、シリコン発振子は温度による共振周波数の変動が大きいという欠点がある。つまり、物質のヤング率は温度に依存する性質を持っているため、温度が変化することでシリコン発振子の共振周波数が変動してしまう。そこで、温度特性の補正のための回路を組み込んだ発振器が提供されている(例えば、特許文献1参照)。   However, the silicon oscillator has a disadvantage that the resonance frequency varies greatly with temperature. That is, since the Young's modulus of a substance has a temperature-dependent property, the resonance frequency of the silicon oscillator varies as the temperature changes. Therefore, an oscillator incorporating a circuit for correcting temperature characteristics is provided (see, for example, Patent Document 1).

この発振器について、図18を参照して簡単に説明する。
図18は発振器の概略を示したブロック図である。この発振器100は発振子101、駆動回路102、PLL(Phase Locked Loop)回路(位相差同期回路)103、温度センサ104、温度特性補正回路105及び補正データメモリ106を備えている。
This oscillator will be briefly described with reference to FIG.
FIG. 18 is a block diagram showing an outline of the oscillator. The oscillator 100 includes an oscillator 101, a drive circuit 102, a PLL (Phase Locked Loop) circuit (phase difference synchronization circuit) 103, a temperature sensor 104, a temperature characteristic correction circuit 105, and a correction data memory 106.

駆動回路102からの信号により発振子101が共振し、共振信号をPLL回路103に出力する。また、発振子101に近接して温度センサ104が設けられており、測定した温度に対応する信号を温度特性補正回路105に出力する。また、補正データメモリ106には、発振子101の各温度における共振周波数の補正データが蓄えられている。そして、温度特性補正回路105は、温度センサ104からの信号に基づいて、補正データメモリ106から補正データを読み込み、該補正データをPLL回路103に出力する。PLL回路103は、出力されてきた補正データに基づいて、発振子101から入力された共振信号の周波数を変調し、外部に出力する。このようにして、共振周波数の温度による変化を補正している。ところで、発振子101以外の各構成品、すなわち、駆動回路102、PLL回路103、温度センサ104、温度特性補正回路105及び補正データメモリ106を、ひとつのCMOS ICチップとして集積することも可能である。   The oscillator 101 resonates due to the signal from the drive circuit 102, and the resonance signal is output to the PLL circuit 103. Further, a temperature sensor 104 is provided in the vicinity of the oscillator 101, and a signal corresponding to the measured temperature is output to the temperature characteristic correction circuit 105. The correction data memory 106 stores resonance frequency correction data at each temperature of the oscillator 101. The temperature characteristic correction circuit 105 reads the correction data from the correction data memory 106 based on the signal from the temperature sensor 104 and outputs the correction data to the PLL circuit 103. The PLL circuit 103 modulates the frequency of the resonance signal input from the oscillator 101 based on the output correction data and outputs it to the outside. In this way, changes in the resonance frequency due to temperature are corrected. By the way, each component other than the oscillator 101, that is, the drive circuit 102, the PLL circuit 103, the temperature sensor 104, the temperature characteristic correction circuit 105, and the correction data memory 106 can be integrated as a single CMOS IC chip. .

このように、PLL回路103により共振信号の周波数を変調して出力することで、発振子101側には特殊な構造や機能を設ける必要がないため、発振器100の製造コストを抑えることができるとともに、歩留まりも向上させることができる。また、パッケージ等により生じる温度特性まで含めて補正することができるという利点がある。
特開2004−23634号公報
このように、PLL回路103により共振信号の周波数を変調して出力することで、発振子101側には特殊な構造や機能を設ける必要がないため、発振器100の製造コストを抑えることができるとともに、歩留まりも向上させることができる。また、パッケージ等により生じる温度特性まで含めて補正することができるという利点がある。
特開2004−23634号公報
In this manner, by modulating the frequency of the resonance signal by the PLL circuit 103 and outputting it, it is not necessary to provide a special structure or function on the oscillator 101 side, so that the manufacturing cost of the oscillator 100 can be suppressed. Yield can also be improved. Further, there is an advantage that correction can be made including temperature characteristics caused by the package or the like. In this manner, by modulating the frequency of the resonance signal by the PLL circuit 103 and outputting it, it is not necessary to provide a special structure or function on the oscillator 101 side, so that the manufacturing cost of the oscillator 100 can be suppressed Yield can also be improved. Further, there is an advantage that correction can be made including temperature characteristics caused by the package or the like.
JP 2004-23634 A JP 2004-23634 A

しかしながら、上述した従来の発振器100では、次のような欠点があった。
すなわち、発振器100では、温度特性を補正するために、PLL回路103、温度センサ104、温度特性補正回路105及び補正データメモリ106を搭載しなければならないが、発振子101の温度特性がPLL回路103で補正可能な範囲に収まるとは限らず、また個々の発振子101ごとに温度特性が異なるため、効率的に温度特性補正ができない可能性がある。 That is, in the oscillator 100, the PLL circuit 103, the temperature sensor 104, the temperature characteristic correction circuit 105, and the correction data memory 106 must be mounted in order to correct the temperature characteristics, but the temperature characteristics of the oscillator 101 are the PLL circuit 103. It is not always within the range that can be corrected by, and since the temperature characteristics are different for each oscillator 101, it may not be possible to efficiently correct the temperature characteristics. However, the conventional oscillator 100 described above has the following drawbacks. However, the conventional oscillator 100 described above has the following flaws.
That is, in the oscillator 100, the PLL circuit 103, the temperature sensor 104, the temperature characteristic correction circuit 105, and the correction data memory 106 must be mounted in order to correct the temperature characteristic, but the temperature characteristic of the oscillator 101 is the PLL circuit 103. Therefore, the temperature characteristics are not always within the range that can be corrected by, and the temperature characteristics are different for each oscillator 101, so that there is a possibility that the temperature characteristics cannot be corrected efficiently. That is, in the oscillator 100, the PLL circuit 103, the temperature sensor 104, the temperature characteristic correction circuit 105, and the correction data memory 106 must be mounted in order to correct the temperature characteristic, but the temperature characteristic of the oscillator 101 is the PLL circuit 103. Therefore, the temperature characteristics are not always within the range that can be corrected by, and the temperature characteristics are different for each oscillator 101, so that there is a possibility that the temperature characteristics cannot be corrected efficiently.

また、PLL回路103で周波数を変調する方式では、温度特性補正データをデジタル処理するため、デジタル処理特有のいくつかの不具合が生じてしまっていた。例えば、デジタル処理するので、外部に出力される周波数の変動が不連続となり、変調後の周波数が不安定となってしまう。そのため、温度特性補正を高精度に行うことが難しかった。また、外部に出力される周波数の変動が不連続であることに加え、デジタル処理を行うので、周波数が変動する際にノイズが発生してしまいやすかった。このノイズは、周波数の変動が急峻であるほど、大きいものとなる。そのため、温度特性補正を効率的に行うことが難しかった。   Further, in the method of modulating the frequency by the PLL circuit 103, since the temperature characteristic correction data is digitally processed, there are some problems peculiar to the digital processing. For example, since digital processing is performed, fluctuations in the frequency output to the outside are discontinuous, and the frequency after modulation becomes unstable. For this reason, it has been difficult to perform temperature characteristic correction with high accuracy. In addition to the fact that the variation in the frequency output to the outside is discontinuous, since digital processing is performed, noise is likely to occur when the frequency varies. This noise becomes larger as the frequency variation becomes steeper. For this reason, it has been difficult to efficiently perform temperature characteristic correction.

上述したように、デジタル的に補正を行うために、温度特性補正を高精度かつ効率良く行うことが難しかった。そこで、PLL回路103の回路基板を大きくして高精度化を図ることも可能であるが、ただでさえ回路が複雑なものがさらに複雑化してしまい、ドライバICの複雑化や製造コストの増加に繋がるという新たな問題が生じてしまう。   As described above, since the digital correction is performed, it is difficult to perform the temperature characteristic correction with high accuracy and efficiency. Therefore, it is possible to increase the accuracy of the circuit board of the PLL circuit 103. However, even the complicated circuit becomes more complicated, which increases the complexity of the driver IC and the manufacturing cost. A new problem of connecting will arise.

そこで、本発明は、上記課題を解決するためになされたものであって、構成の簡素化を図った上で、温度特性の補正を高精度かつ効率的に行うことができる高性能な発振子及び該発振子を有する発振器を提供するものである。 Accordingly, the present invention has been made to solve the above-described problems, and has a high-performance oscillator capable of correcting a temperature characteristic with high accuracy and efficiency while simplifying the configuration. And an oscillator having the resonator.

本発明は前記課題を解決するために以下の手段を提供する。
本発明に係る発振子は、一方向に延びるように形成され、該一方向に直交する他方向に振動する振動片と、該振動片から左右に分岐して延出する一対の延出部と、該振動片の一端または両端を支持するベース部とを有する振動子と、前記振動片に対して所定距離を空けた状態で前記振動片を間に挟むように配置され、駆動電圧が印加された時に静電引力を発生させて前記振動片を振動させる電極部と、前記一対の延出部に対して所定距離を空けた状態でそれぞれ対向配置され、補正電圧が印加されたときに静電引力を発生させて各延出部を引き寄せ、前記振動片に対して前記一方向の圧縮応力を作用させる補正電極と、を備えたことを特徴とするものである。 The oscillator according to the present invention includes a vibrating piece that is formed so as to extend in one direction and vibrates in the other direction orthogonal to the one direction, and a pair of extending portions that branch left and right from the vibrating piece and extend. , A vibrator having a base portion that supports one end or both ends of the vibrating piece and the vibrating piece are arranged so as to sandwich the vibrating piece at a predetermined distance from the vibrating piece, and a driving voltage is applied. At that time, the electrode portion that generates an electrostatic attraction to vibrate the vibrating piece and the pair of extending portions are arranged so as to face each other with a predetermined distance from each other, and when a correction voltage is applied, the capacitance is electrostatic. It is characterized by including a correction electrode that generates an attractive force to attract each extending portion and exerts a compressive stress in the one direction on the vibrating piece. The present invention provides the following means in order to solve the above problems. The present invention provides the following means in order to solve the above problems.
An oscillator according to the present invention is formed so as to extend in one direction, and vibrates in another direction orthogonal to the one direction, and a pair of extending portions that branch out and extend from the vibrating piece to the left and right. And a vibrator having a base portion that supports one end or both ends of the vibrating piece, and the vibrating piece sandwiched between the vibrating piece with a predetermined distance therebetween, and a drive voltage is applied. When the correction voltage is applied, an electrode portion that generates an electrostatic attraction force when vibrating and vibrates the vibrating piece is disposed opposite to the pair of extending portions at a predetermined distance. And a correction electrode that draws each extending portion by generating an attractive force and applies the compressive stress in the one direction to the vibrating piece. An oscillator according to the present invention is formed so as to extend in one direction, and vibrates in another direction orthogonal to the one direction, and a pair of extending portions that branch out and extend from the vibrating piece to the left and right. a vibrator having a base portion that supports one end or both ends of the vibrating piece, and the vibrating piece sandwiched between the vibrating piece with a predetermined distance similarly, and a drive voltage is applied. When the correction voltage is applied, an electrode portion And a correction electrode that draws each extending portion by generating an attractive force and applies the compressive stress in the one direction that generates an electrostatic attraction force when vibrating and vibrates the vibrating piece is disposed opposite to the pair of extending portions at a predetermined distance. to the vibrating piece.

本発明に係る発振子においては、温度の変化により振動片の共振周波数が変化しようとするが、この変化を補正することができる。つまり、補正電極に補正電圧を印加することで、補正電極と延出部との間に静電引力を発生させ、振動片から分岐した一対の延出部を引き寄せる。これにより、振動片に対して一方向(軸方向)の圧縮応力を作用させることができ、温度変化によって生じたヤング率の変化を補正することができる。よって、振動片のヤング率を一定に維持することができるため、振動特性の変動を抑制することができる。その結果、温度変化による振動片の周波数変動を相殺でき、温度特性の補正を行うことができる。特に、従来のようにPLL回路を利用したデジタル的な温度補正を行う場合に比べ、温度変化に対応した圧縮応力を加えるというアナログ的な温度補正なので、ノイズが発生する等のデジタル処理特有の不都合が生じない。したがって、温度特性の補正を高精度かつ効率的に行うことができ、高性能化を図ることができる。   In the resonator according to the present invention, the resonance frequency of the resonator element tends to change due to a change in temperature, but this change can be corrected. In other words, by applying a correction voltage to the correction electrode, an electrostatic attractive force is generated between the correction electrode and the extension portion, and the pair of extension portions branched from the vibrating piece are attracted. Thereby, a compressive stress in one direction (axial direction) can be applied to the resonator element, and a change in Young's modulus caused by a temperature change can be corrected. Therefore, since the Young's modulus of the resonator element can be kept constant, fluctuations in vibration characteristics can be suppressed. As a result, frequency fluctuations of the resonator element due to temperature changes can be offset, and temperature characteristics can be corrected. In particular, compared to the conventional digital temperature correction using a PLL circuit, the analog temperature correction is to apply a compressive stress corresponding to the temperature change. Does not occur. Therefore, the temperature characteristic can be corrected with high accuracy and efficiency, and high performance can be achieved.

本発明に係る発振子は、上記発振子において、前記振動片が、前記ベース部に一端が片持ち状に支持されていることを特徴とするものである。   The resonator according to the present invention is characterized in that, in the resonator, the vibrating piece is supported at one end on the base portion in a cantilevered manner.

本発明に係る発振子においては、振動片がベース部に片持ち状で支持されるため、振動の変位を大きくすることができ、効率的に周波数信号を出力できる。また、振動片に作用する支持応力が少ない振動子を得ることができる。   In the resonator according to the present invention, since the vibrating piece is supported by the base portion in a cantilevered manner, the vibration displacement can be increased and a frequency signal can be output efficiently. In addition, it is possible to obtain a vibrator with less support stress acting on the resonator element.

本発明に係る発振子は、上記発振子において、前記振動片が、前記ベース部に両端が両持ち状に支持されていることを特徴とするものである。   The resonator according to the present invention is characterized in that, in the above-described resonator, the resonator element is supported at both ends by the base portion in a doubly supported manner.

本発明に係る発振子においては、振動片が両持ち状態で支持されているので、振動片の両端が基端部を介してベース部に支持されることになる。そのため、片持ち状に支持された振動片に比べ、安定した振動特性を得ることができる。   In the resonator according to the present invention, since the resonator element is supported in a both-end supported state, both ends of the resonator element are supported by the base portion via the base end portion. Therefore, stable vibration characteristics can be obtained as compared with a vibrating piece supported in a cantilever manner.

本発明に係る発振子は、上記発振子において、前記一対の延出部が、前記他方向に向けて延出していることを特徴とするものである。   The oscillator according to the present invention is characterized in that, in the oscillator, the pair of extending portions extend in the other direction.

本発明に係る発振子においては、一対の延出部が一方向に直交する他方向に向けて延出しているので、一対の延出部を補正電極に引き寄せた時に、振動片に作用する圧縮応力が一方向(軸方向)に向けて作用しやすい。したがって、振動特性の変動をより効率的に抑制することができる。   In the resonator according to the present invention, since the pair of extending portions extend in the other direction orthogonal to one direction, the compression acting on the vibration piece when the pair of extending portions are drawn to the correction electrode. Stress tends to act in one direction (axial direction). Therefore, fluctuations in vibration characteristics can be more efficiently suppressed.

本発明に係る発振子は、上記発振子において、前記一対の延出部が、前記振動片の両端側にそれぞれ設けられていることを特徴とするものである。   The resonator according to the present invention is characterized in that in the above-described resonator, the pair of extending portions are provided on both ends of the resonator element.

本発明に係る発振子においては、一対の延出部が振動片の両端側からそれぞれ他方向に延出しているため、振動片には、その両端から圧縮応力がそれぞれ作用することとなる。これにより、振動片に作用する圧縮応力分布が均一になるとともに、振動片に圧縮応力が効果的に作用しやすくなる。したがって、補正電圧を低くしたとしても、必要な圧縮応力を作用させることができるので、省電力化を図ることができる。また、延出部と補正電極との対向面積を増加させることができるため、補正電極に印加する電圧を抑制することができる。この点においても、省電力化が可能となる。   In the resonator according to the present invention, since the pair of extending portions extend in the other direction from both ends of the vibrating piece, compressive stress acts on the vibrating piece from both ends, respectively. As a result, the distribution of compressive stress acting on the resonator element becomes uniform, and the compressive stress easily acts on the resonator element effectively. Therefore, even if the correction voltage is lowered, the necessary compressive stress can be applied, so that power saving can be achieved. Moreover, since the opposing area of the extension part and the correction electrode can be increased, the voltage applied to the correction electrode can be suppressed. Also in this respect, power saving can be achieved.

本発明に係る発振子は、上記発振子において、前記補正電極及び前記延出部が、それぞれ一部分が櫛歯状に形成され、これら櫛歯状に形成された補正電極と延出部とが互い違いに配されていることを特徴とするものである。   In the resonator according to the present invention, in the oscillator, the correction electrode and the extending portion are each formed in a comb-like shape, and the correction electrode and the extending portion formed in the comb-tooth shape are staggered. It is characterized by being arranged in.

本発明に係る発振子においては、それぞれ櫛歯状に形成された補正電極及び延出の一部分が互い違いに配されているので、補正電極と対向部との対向面積をより増加させることができる。そのため、振動片に対してさらに効率的に圧縮応力を作用させることができ、さらなる省電力化を図ることができる。   In the oscillator according to the present invention, the correction electrodes formed in a comb-teeth shape and a part of the extension are alternately arranged, so that the facing area between the correction electrode and the facing portion can be further increased. Therefore, the compressive stress can be applied to the vibrating piece more efficiently, and further power saving can be achieved.

また、本発明に係る発振器は、上記本発明の発振子と、駆動ICとを有し、該駆動ICは、前記電極部に前記駆動電圧を印加する駆動回路と、記振動片に作用させる前記圧縮応力の圧縮応力値を算出する算出機構と、算出された前記圧縮応力値に応じた前記補正電圧を前記補正電極に印加する電圧印加回路と、を備えていることを特徴とするものである。   The oscillator according to the present invention includes the resonator according to the present invention and a driving IC, and the driving IC applies a driving circuit that applies the driving voltage to the electrode portion and the vibration piece. A calculation mechanism for calculating a compressive stress value of a compressive stress, and a voltage application circuit for applying the correction voltage corresponding to the calculated compressive stress value to the correction electrode are provided. .

本発明に係る発振器においては、駆動回路から電極部に駆動電圧を印加させることで、振動片を他方向に振動させることができる。ここで、温度変化によって、振動片の周波数が変動した場合には、算出機構がこの周波数変動を圧縮応力で相殺するために必要な圧縮応力値を算出する。そして、この圧縮応力値に対応した印加信号を電圧印加回路に出力する。電圧印加回路は、印加信号に応じた補正電圧を補正電極に印加する。これにより、周波数変動に応じた圧縮応力を振動片に作用させることができ、振動片の温度変化に対するヤング率の変化を補正して、振動特性の変動を補正することができる。特に、アナログ的に温度補正を行うことができる発振子を有しているので、PLL回路のような複雑な回路を設ける必要がない。よって、設計の簡素化及び製造コストを削減することができる。また、アナログ的な回路によって印加電圧を変化させることができるため、印加電圧の調整が連続的となり、PLL回路のようなデジタル的な回路に比べ、周波数の変動が滑らかになる。そのため、温度特性の補正を効率的に行うことができ、高性能な発振器を提供することができる。   In the oscillator according to the present invention, the resonator element can be vibrated in the other direction by applying a drive voltage from the drive circuit to the electrode portion. Here, when the frequency of the resonator element fluctuates due to a temperature change, the calculation mechanism calculates a compressive stress value necessary for canceling the frequency fluctuation with the compressive stress. Then, an application signal corresponding to the compressive stress value is output to the voltage application circuit. The voltage application circuit applies a correction voltage corresponding to the applied signal to the correction electrode. Thereby, the compressive stress according to the frequency fluctuation can be applied to the vibration piece, and the change of the Young's modulus with respect to the temperature change of the vibration piece can be corrected, and the fluctuation of the vibration characteristic can be corrected. In particular, since an oscillator that can perform temperature correction in an analog manner is provided, it is not necessary to provide a complicated circuit such as a PLL circuit. Therefore, simplification of design and manufacturing cost can be reduced. In addition, since the applied voltage can be changed by an analog circuit, the adjustment of the applied voltage is continuous, and the frequency fluctuation is smooth as compared with a digital circuit such as a PLL circuit. Therefore, the temperature characteristic can be corrected efficiently, and a high-performance oscillator can be provided.

また、本発明に係る発振器は、上記発振器において、前記算出機構が、前記発振子の温度を検出する温度センサと、前記温度センサで検出された温度と予め設定された基準温度との温度差に基づいて、前記圧縮応力値を算出する補正データが記憶されたメモリ部と、を備えていることを特徴とするものである。   Further, in the oscillator according to the present invention, in the oscillator, the calculation mechanism detects a temperature difference between a temperature sensor that detects the temperature of the oscillator and a temperature detected by the temperature sensor and a preset reference temperature. And a memory unit in which correction data for calculating the compressive stress value is stored.

本発明に係る発振器においては、温度センサにより実際の発振子の温度を検出しているので、温度変化が生じた時に、基準温度との温度差が変化する。すると、算出機構は、メモリ部に記憶された補正データを参照することで、温度差による周波数変動を圧縮応力で相殺するために必要な圧縮応力値を速やかに算出することができる。そして、この圧縮応力値に対応した印加信号を電圧印加回路に出力する。このように、補正データを利用することで、より正確かつ効率良く温度特性の補正を行うことができる。   In the oscillator according to the present invention, since the actual temperature of the oscillator is detected by the temperature sensor, the temperature difference from the reference temperature changes when a temperature change occurs. Then, the calculation mechanism can quickly calculate the compressive stress value necessary for canceling the frequency fluctuation due to the temperature difference with the compressive stress by referring to the correction data stored in the memory unit. Then, an application signal corresponding to the compressive stress value is output to the voltage application circuit. As described above, by using the correction data, the temperature characteristic can be corrected more accurately and efficiently.

また、本発明に係る発振器は、上記発振器において、前記算出機構が、前記駆動回路から前記発振子と常時同値の駆動電圧が印加されるレファレンス発振子と、このレファレンス発振子と前記発振子との周波数の差分を検出するとともに、検出した差分に基づいて前記圧縮応力値を算出する周波数差分検出回路と、を備えていることを特徴とするものである。   In the oscillator according to the present invention, the calculation mechanism includes a reference oscillator to which a driving voltage having the same value as that of the oscillator is applied from the drive circuit, and the reference oscillator and the oscillator. And a frequency difference detection circuit that detects a difference in frequency and calculates the compressive stress value based on the detected difference.

本発明に係る発振器においては、温度によって周波数が変化するレファレンス発振子を参照用として有している。そのため、周波数差分検出回路により、レファレンス発振子の周波数との差分に基づいて発振子に作用させる圧縮応力値を決定することができる。したがって、微細な温度変動にも対応することができるため、より高精細な発振器を提供することができる。   The oscillator according to the present invention has a reference oscillator whose frequency changes with temperature for reference. Therefore, the frequency difference detection circuit can determine the compressive stress value to be applied to the oscillator based on the difference from the frequency of the reference oscillator. Accordingly, since it is possible to cope with minute temperature fluctuations, a higher-definition oscillator can be provided.

本発明に係る発振子によれば、補正電極に補正電圧を印加することで、補正電極と延出部との間に静電引力を発生させ、振動片から分岐した一対の延出部を引き寄せる。これにより、振動片に対して一方向(軸方向)の圧縮応力を作用させることができ、温度変化よって生じたヤング率の変化を補正することができる。よって、振動片のヤング率を一定に維持することができるため、振動特性の変動を抑制することができる。したがって、温度特性の補正を高精度かつ効率的に行うことができ、高性能化を図ることができる。
また本発明に係る発振器によれば、上記発振子を有しているので、周波数変動に応じた圧縮応力を振動片に作用させることができ、振動片の温度変化に対するヤング率の変化を補正して、振動特性の変動を補正することができる。 Further, according to the oscillator according to the present invention, since it has the above oscillator, it is possible to apply compressive stress according to the frequency fluctuation to the vibrating piece, and to correct the change of Young's modulus with respect to the temperature change of the vibrating piece. Therefore, fluctuations in vibration characteristics can be corrected. 特に、アナログ的に温度補正を行うことができる発振子を有しているので、PLL回路のような複雑な回路を設ける必要がない。 In particular, since it has an oscillator capable of performing temperature correction in an analog manner, it is not necessary to provide a complicated circuit such as a PLL circuit. よって、設計の簡素化及び製造コストを削減することができる。 Therefore, the design can be simplified and the manufacturing cost can be reduced. また、アナログ的な回路によって印加電圧を変化させることができるため、印加電圧の調整が連続的となり、PLL回路のようなデジタル的な回路に比べ、周波数の変動が滑らかになる。 Further, since the applied voltage can be changed by an analog circuit, the adjustment of the applied voltage becomes continuous, and the frequency fluctuation becomes smoother than that of a digital circuit such as a PLL circuit. そのため、温度特性の補正を効率的に行うことができ、高性能な発振器を提供することができる。 Therefore, it is possible to efficiently correct the temperature characteristics and provide a high-performance oscillator. According to the resonator according to the aspect of the invention, by applying a correction voltage to the correction electrode, an electrostatic attractive force is generated between the correction electrode and the extension portion, and the pair of extension portions branched from the vibrating piece are attracted. . Thereby, a compressive stress in one direction (axial direction) can be applied to the resonator element, and a change in Young's modulus caused by a temperature change can be corrected. Therefore, since the Young's modulus of the resonator element can be kept constant, fluctuations in vibration characteristics can be suppressed. Therefore, the temperature characteristic can be corrected with high accuracy and efficiency, and high performance can be achieved. According to the resonator according to the aspect of the invention, by applying a correction voltage to the correction electrode, an electrostatic attractive force is generated between the correction electrode and the extension portion, and the pair of extension portions recently from the vibrating piece are attracted .. therefore, a compressive stress in one direction (axial direction) can be applied to the resonator element, and a change in Young's modulus caused by a temperature change can be corrected. Therefore, since the Young's modulus of the resonator element can be kept. constant, fluctuations in vibration characteristics can be suppressed. Therefore, the temperature characteristic can be corrected with high accuracy and efficiency, and high performance can be achieved.
Further, according to the oscillator according to the present invention, since the resonator is provided, a compressive stress corresponding to a frequency variation can be applied to the resonator element, and a change in Young's modulus with respect to a temperature change of the resonator element is corrected. Thus, fluctuations in vibration characteristics can be corrected. In particular, since an oscillator that can perform temperature correction in an analog manner is provided, it is not necessary to provide a complicated circuit such as a PLL circuit. Therefore, simplification of design and manufacturing cost can be reduced. In addition, since the applied voltage can be changed by an analog circuit, the adjustment of the applied voltage is continuous, and the frequency fluctuation is smooth as compared with a digital circuit such as a PLL circuit. Therefore, the temperature characteristic can be corrected efficiently, and a high-performance oscillator can be provided. Further, according to the oscillator according to the present invention, since the resonator is provided, a compressive stress corresponding to a frequency variation can be applied to the resonator element, and a change in Young's modulus with respect to a temperature change of the resonator element Thus, fluctuations in vibration characteristics can be corrected. In particular, since an oscillator that can perform temperature correction in an analog manner is provided, it is not necessary to provide a complicated circuit such as a PLL circuit. Therefore, simplification of design and manufacturing cost can be reduced. In addition, since the applied voltage can be changed by an analog circuit, the adjustment of the applied voltage is continuous, and the frequency fluctuation is smooth as compared with a digital circuit such as a PLL circuit. Therefore, the temperature characteristic can be corrected efficiently, and a high-performance oscillator can be provided.

(第1実施形態)
次に、本発明の発振子及び該発振子を有する発振器の第1実施形態を図1〜4に基づいて説明する。
なお、以下に示す各図においては、各層や各部材を図面上で認識可能な程度の大きさとするため、各層や各部材ごとに縮尺を異ならせてある。
(First embodiment)
Next, a first embodiment of an oscillator of the present invention and an oscillator having the oscillator will be described with reference to FIGS.
In each of the drawings shown below, the scale of each layer and each member is different in order to make each layer and each member recognizable on the drawing.

図1は、発振子の平面図であり、図2の(a)は図1のA−A’線に沿う断面図であり、(b)はB−B’線に沿う断面図である。
図1,2に示すように、発振子30は、シリコン支持層11(例えば、厚さ300〜800μm)と、二酸化珪素(SiO2)のBOX(Buried Oxide)層12と、シリコン活性層(例えば、厚さ5〜100μm)44とが順次積層された、いわゆるSOI(Silicon−On−Insulator)基板45を用いて半導体プロセス技術によって製造されるものである。 As shown in FIGS. 1 and 2, the oscillator 30 includes a silicon support layer 11 (for example, a thickness of 300 to 800 μm), a BOX (Buried Oxide) layer 12 of silicon dioxide (SiO2), and a silicon active layer (for example, for example). It is manufactured by semiconductor process technology using a so-called SOI (Silicon-On-Insulator) substrate 45 in which (thickness 5 to 100 μm) 44 is sequentially laminated. ただし、SOI基板45に限らず、シリコン等の半導体基板で発振子30を製造しても構わない。 However, the oscillator 30 may be manufactured not only on the SOI substrate 45 but also on a semiconductor substrate such as silicon. これらの層の内、シリコン活性層44には振動子32及び駆動電極(電極部)33a及び検出電極(電極部)33bが構成されている。 Among these layers, the silicon active layer 44 includes an oscillator 32, a driving electrode (electrode portion) 33a, and a detection electrode (electrode portion) 33b. FIG. 1 is a plan view of an oscillator, FIG. 2A is a cross-sectional view taken along the line AA ′ in FIG. 1, and FIG. 1B is a cross-sectional view taken along the line BB ′. FIG. 1 is a plan view of an oscillator, FIG. 2A is a cross-sectional view taken along the line AA ′ in FIG. 1, and FIG. 1B is a cross-sectional view taken along the line BB ′.
As shown in FIGS. 1 and 2, the oscillator 30 includes a silicon support layer 11 (for example, a thickness of 300 to 800 μm), a silicon dioxide (SiO 2) BOX (Buried Oxide) layer 12, and a silicon active layer (for example, And a so-called SOI (Silicon-On-Insulator) substrate 45 that is sequentially laminated with a thickness of 5 to 100 μm) 44. However, the oscillator 30 may be manufactured not only with the SOI substrate 45 but also with a semiconductor substrate such as silicon. Among these layers, the silicon active layer 44 includes a vibrator 32, a drive electrode (electrode part) 33a, and a detection electrode (electrode part) 33b. As shown in FIGS. 1 and 2, the oscillator 30 includes a silicon support layer 11 (for example, a thickness of 300 to 800 μm), a silicon dioxide (SiO 2) BOX (Buried Oxide) layer 12, and a silicon active layer (for example, And a so-called SOI (Silicon-On-Insulator) substrate 45 that is sequentially laminated with a thickness of 5 to 100 μm) 44. However, the oscillator 30 may be manufactured not only with the SOI substrate 45 But also with a semiconductor substrate such as silicon. Among these layers, the silicon active layer 44 includes a insulator 32, a drive electrode (electrode part) 33a, and a detection electrode (electrode part) 33b.

振動子32は、平面視略T字状のものであり、振動子アイランド34(ベース部)と、この振動子アイランド34に基端部35を介して片持ち状に支持された振動片36とを備えている。 The vibrator 32 has a substantially T-shape in plan view, and includes a vibrator island 34 (base portion), and a vibrator piece 36 supported in a cantilever manner by the vibrator island 34 via a base end portion 35. It has.

振動子アイランド34は、平面視矩形状のものであり、シリコン支持層11上にBOX層12を介して形成されている。
振動片36は、平面視長方形状のものであり、振動子アイランド34に、その基端部35が支持されるとともに、振動子アイランド34からX方向(一方向)に延出しているものである。 The vibrating piece 36 has a rectangular shape in a plan view, and its base end portion 35 is supported by the vibrator island 34 and extends in the X direction (one direction) from the vibrator island 34. .. また、振動片36は、シリコン支持層11との間にギャップを有しつつ延出しており(図2(a)参照)、その延出方向(X方向)と直交するY方向(振動片36の幅方向である他方向)に振動可能に構成されている。 Further, the vibrating piece 36 extends while having a gap with the silicon support layer 11 (see FIG. 2A), and the vibrating piece 36 extends in the Y direction (vibration piece 36) orthogonal to the extending direction (X direction). It is configured to be able to vibrate in the other direction, which is the width direction of. The vibrator island 34 has a rectangular shape in plan view, and is formed on the silicon support layer 11 via the BOX layer 12. The vibrator island 34 has a rectangular shape in plan view, and is formed on the silicon support layer 11 via the BOX layer 12.
The vibration piece 36 has a rectangular shape in plan view, and has a base end portion 35 supported by the vibrator island 34 and extends from the vibrator island 34 in the X direction (one direction). . The vibrating piece 36 extends with a gap between the vibrating plate 36 and the silicon support layer 11 (see FIG. 2A), and the Y direction (vibrating piece 36) orthogonal to the extending direction (X direction). It is configured to be able to vibrate in the other direction which is the width direction. The vibration piece 36 has a rectangular shape in plan view, and has a base end portion 35 supported by the vibrator island 34 and extends from the vibrator island 34 in the X direction (one direction) .. The vibrating piece 36 extends with a gap between the vibrating plate 36 and the silicon support layer 11 (see FIG. 2A), and the Y direction (vibrating piece 36) orthogonal to the extending direction (X direction). It is configured to be able to vibrate in the other direction which is the width direction.

振動子32の両側方には、振動子32に対してギャップを空けた状態で、振動子32を間に挟むように、駆動電極33aと検出電極33bとが配置されている。駆動電極33a及び検出電極33bは、振動片36の幅方向に沿って形成されており、シリコン支持層11上にBOX層12を介して形成されている。   A drive electrode 33a and a detection electrode 33b are arranged on both sides of the vibrator 32 so as to sandwich the vibrator 32 with a gap from the vibrator 32. The drive electrode 33 a and the detection electrode 33 b are formed along the width direction of the resonator element 36, and are formed on the silicon support layer 11 via the BOX layer 12.

ここで、振動片36の先端部39には、同一ポイントから左右に分岐して、振動片36の延出方向(X方向)に直交する方向(Y方向)に、シリコン支持層11との間にギャップを有しながらそれぞれ同じ長さだけ延出する一対の延出部37が形成されている。一対の延出部37は、振動片36の先端部39と接続されており、したがって振動子32は振動片36の幅方向の中心を中心線(図1中A−A’線)として線対称の形状となっている。   Here, the distal end portion 39 of the vibration piece 36 branches from the same point to the left and right, and extends in the direction (Y direction) perpendicular to the extending direction (X direction) of the vibration piece 36 between the silicon support layer 11. A pair of extending portions 37 are formed to extend the same length while having a gap. The pair of extending portions 37 are connected to the distal end portion 39 of the vibrating piece 36, and therefore the vibrator 32 is line-symmetric with the center in the width direction of the vibrating piece 36 as the center line (AA ′ line in FIG. 1). It is the shape of.

一対の延出部37の長手方向に沿う側方には、一対の補正電極38a,38bが設けられている。この補正電極38a,38bは、シリコン支持層11上にBOX層12を介して配置されており、延出部37の一方の側面に対してギャップgを介してそれぞれ配置されている。補正電極38a,38bは、図示しない外部電源より補正電圧が印加されたときに延出部37との間に静電引力を発生させて各延出部37を引き寄せ、振動片36に対して振動片36の軸方向(X方向)の圧縮応力を作用させるものである。これにより、補正電極38a,38bは振動片36に対して、後述するように温度変化による振動片36の共振周波数の変動を相殺するように圧縮応力を作用させることとなる。そして、延出部37における補正電極38a,38bと対向している領域が対向部40として構成されている(例えば、図1中L1,L2に相当する領域部分)。なお、これら補正電極38a,38bと延出部37とにより応力発生部41が構成されている。   A pair of correction electrodes 38 a and 38 b are provided on the sides along the longitudinal direction of the pair of extending portions 37. The correction electrodes 38 a and 38 b are disposed on the silicon support layer 11 via the BOX layer 12, and are disposed with respect to one side surface of the extending portion 37 via a gap g. The correction electrodes 38a and 38b generate an electrostatic attractive force between the extension portions 37 when a correction voltage is applied from an external power source (not shown) to draw the extension portions 37 and vibrate the vibration piece 36. A compressive stress in the axial direction (X direction) of the piece 36 is applied. As a result, the correction electrodes 38a and 38b apply a compressive stress to the vibrating piece 36 so as to cancel the fluctuation of the resonance frequency of the vibrating piece 36 due to the temperature change, as will be described later. And the area | region which opposes correction electrode 38a, 38b in the extension part 37 is comprised as the opposing part 40 (for example, the area | region part corresponded to L1, L2 in FIG. 1). The correction electrodes 38a and 38b and the extending portion 37 constitute a stress generating portion 41.

次に、図3,4に基づいて、発振子の製造方法について説明する。図3,4は、発振子の工程図であり、(a)は図1のA−A’線に相当する断面、(b)はB−B’線に相当する断面を示している。なお、発振子の製造方法の各工程は、以下に説明の工程順番に限定されるものではない。   Next, a method for manufacturing an oscillator will be described with reference to FIGS. 3 and 4 are process diagrams of the oscillator, in which (a) shows a cross section corresponding to the A-A 'line in FIG. 1, and (b) shows a cross section corresponding to the B-B' line. In addition, each process of the manufacturing method of an oscillator is not limited to the process order demonstrated below.

まず、図3に示すように、シリコン支持層11上にBOX層12、シリコン活性層44が順次積層されたSOI基板45を準備し、このSOI基板45上を、各電極33a,33b、補正電極38a,38b及び振動子32に各々分離する。具体的には、フォトリソグラフィ技術により露光・現像した図示しないレジストマスクを介してドライエッチングを行うことで、シリコン活性層44を貫通してBOX層12の上面まで到達する凹部を形成する。   First, as shown in FIG. 3, an SOI substrate 45 in which a BOX layer 12 and a silicon active layer 44 are sequentially stacked on a silicon support layer 11 is prepared, and the electrodes 33 a and 33 b and correction electrodes are formed on the SOI substrate 45. It isolate | separates into 38a, 38b and the vibrator | oscillator 32, respectively. Specifically, by performing dry etching through a resist mask (not shown) exposed and developed by photolithography technology, a recess that penetrates through the silicon active layer 44 and reaches the upper surface of the BOX layer 12 is formed.

次に、図4に示すように、シリコン活性層44を、各電極33a,33b、補正電極38a,38b及び振動子3に各々分離した後、振動子32の振動片36及び延出部37の形成領域のBOX層12を除去する(図2参照)。具体的には、シリコン活性層44に形成した凹部内をエッチングすることで、振動片36がシリコン支持層11から分離され、振動子アイランド34に片持ち状に支持された振動子32が形成される。なお、このエッチングはドライエッチングまたはウェットエッチングのいずれの方法で行っても構わない。
その結果、図1,2に示す発振子30を製造することができる。 As a result, the oscillator 30 shown in FIGS. 1 and 2 can be manufactured. Next, as shown in FIG. 4, after the silicon active layer 44 is separated into the electrodes 33 a and 33 b, the correction electrodes 38 a and 38 b, and the vibrator 3, the vibrating piece 36 and the extension portion 37 of the vibrator 32 are separated. The BOX layer 12 in the formation region is removed (see FIG. 2). Specifically, by etching the inside of the recess formed in the silicon active layer 44, the resonator element 36 is separated from the silicon support layer 11, and the resonator 32 supported in a cantilever manner on the resonator island 34 is formed. The This etching may be performed by either dry etching or wet etching. Next, as shown in FIG. 4, after the silicon active layer 44 is separated into the electrodes 33 a and 33 b, the correction electrodes 38 a and 38 b, and the vibrator 3, the vibrating piece 36 and the extension portion 37 of The vibrator 32 are separated. The BOX layer 12 in the formation region is removed (see FIG. 2). Specifically, by joining the inside of the recess formed in the silicon active layer 44, the resonator element 36 is separated from the silicon support. layer 11, and the resonator 32 supported in a cantilever manner on the resonator island 34 is formed. The This transmitting may be performed by either dry sequencing or wet clamping.
As a result, the oscillator 30 shown in FIGS. 1 and 2 can be manufactured. As a result, the oscillator 30 shown in FIGS. 1 and 2 can be manufactured.

次に、図5に基づいて本実施形態の発振器の構成について説明する。図5は本実施形態の発振器の構成を示すブロック図である。なお、以下の説明においては図1を適宜援用する。
図5に示すように、発振器10は上述した発振子30と駆動IC20とを備えている。 As shown in FIG. 5, the oscillator 10 includes the oscillator 30 and the drive IC 20 described above. 駆動IC20は、図示しない電気回路を介して外部電源に電気的に接続されており、上述した駆動電極33aに駆動電圧を印加する駆動回路14と、振動片36に作用させる圧縮応力の圧縮応力値を算出する周波数変動検出回路(算出機構)15と、周波数変動検出回路15により算出された圧縮応力値に応じた補正電圧を補正電極38a,38bに印加する電圧印加回路16とを備えている。 The drive IC 20 is electrically connected to an external power source via an electric circuit (not shown), and the drive circuit 14 that applies a drive voltage to the drive electrode 33a described above and the compressive stress value of the compressive stress acting on the vibrating piece 36. It is provided with a frequency fluctuation detection circuit (calculation mechanism) 15 for calculating the above, and a voltage application circuit 16 for applying a correction voltage corresponding to the compressive stress value calculated by the frequency fluctuation detection circuit 15 to the correction electrodes 38a and 38b. なお、本実施形態では、上述したシリコン支持層11を介して駆動IC20と発振子30とが一体的にパッケージングされている。 In this embodiment, the drive IC 20 and the oscillator 30 are integrally packaged via the silicon support layer 11 described above. よって、シリコン支持層11は、駆動IC20も同時に支持する共通基板として機能する。 Therefore, the silicon support layer 11 functions as a common substrate that also supports the drive IC 20 at the same time. Next, the configuration of the oscillator according to the present embodiment will be described with reference to FIG. FIG. 5 is a block diagram showing the configuration of the oscillator of this embodiment. In the following description, FIG. 1 is used as appropriate. Next, the configuration of the oscillator according to the present embodiment will be described with reference to FIG. FIG. 5 is a block diagram showing the configuration of the oscillator of this embodiment. In the following description, FIG. 1 is used as appropriate.
As shown in FIG. 5, the oscillator 10 includes the oscillator 30 and the drive IC 20 described above. The driving IC 20 is electrically connected to an external power source via an electric circuit (not shown), and the driving circuit 14 that applies a driving voltage to the driving electrode 33a described above and the compressive stress value of the compressive stress that acts on the resonator element 36. And a voltage application circuit 16 for applying a correction voltage corresponding to the compressive stress value calculated by the frequency fluctuation detection circuit 15 to the correction electrodes 38a and 38b. In the present embodiment, the drive IC 20 and the oscillator 30 are integrally packaged via the silicon support layer 11 described above. Therefore, the silicon support layer 11 functions as a common substrate that also supports the drive IC 20 at the same time. As shown in FIG. 5, the oscillator 10 includes the oscillator 30 and the drive IC 20 described above. The driving IC 20 is appropriately connected to an external power source via an electric circuit (not shown), and the driving circuit 14 that applies a driving voltage to the driving electrode 33a described above and the compressive stress value of the compressive stress that acts on the resonator element 36. And a voltage application circuit 16 for applying a correction voltage corresponding to the compressive stress value calculated by the frequency fluctuation detection circuit 15 to the correction electrodes 38a and 38b. In the present embodiment, the drive IC 20 and the oscillator 30 are therefore packaged via the silicon support layer 11 described above. Therefore, the silicon support layer 11 functions as a common substrate that also supports the drive IC 20 at the same time.

駆動回路14は、振動片36が所定の共振周波数を有して振動するように、上述した駆動電極33aへ駆動電圧を印加する。駆動電極33aに電圧が印加されると、駆動電極33aと振動片36との間に静電引力が発生する。その結果、振動片36が、Y方向、つまり振動片36の両側方にギャップを介して配置された駆動電極33a,検出電極33bに接近離間するように振動する。振動片36が振動すると、振動片36と各電極33a,33bとの間のギャップが変化し、振動片36と各電極33a,33bとの間の静電容量が変動する。そして、その静電容量の変動が共振周波数として検出電極33bにより検出される。   The drive circuit 14 applies a drive voltage to the drive electrode 33a described above so that the vibrating piece 36 vibrates with a predetermined resonance frequency. When a voltage is applied to the drive electrode 33a, an electrostatic attractive force is generated between the drive electrode 33a and the vibrating piece 36. As a result, the vibration piece 36 vibrates so as to approach and separate from the drive electrode 33a and the detection electrode 33b disposed in the Y direction, that is, on both sides of the vibration piece 36 via a gap. When the vibrating piece 36 vibrates, the gap between the vibrating piece 36 and the electrodes 33a and 33b changes, and the capacitance between the vibrating piece 36 and the electrodes 33a and 33b changes. And the fluctuation | variation of the electrostatic capacitance is detected by the detection electrode 33b as a resonance frequency.

周波数変動検出回路15は、検出電極33bにより検出された振動片36の共振周波数を検出信号として受信するものであり、共振周波数の変動を検出するものである。また、周波数変動検出回路15には、振動片36の寸法により決定される共振周波数の値が予め設定されている。   The frequency fluctuation detection circuit 15 receives the resonance frequency of the vibration piece 36 detected by the detection electrode 33b as a detection signal, and detects the fluctuation of the resonance frequency. The frequency fluctuation detection circuit 15 is preset with a resonance frequency value determined by the size of the vibrating piece 36.

電圧印加回路16は、周波数変動検出回路15により検出された共振周波数に基づいて上述した補正電極38a,38bに電圧を印加するものであり、これにより補正電極38a,38bと対向部40との間に静電引力が発生する。より詳述に説明すると、補正電極38a,38bと対向部40との間には、延出部37が補正電極38a,38b側に引き寄せられる静電引力が発生する。つまり、振動片36には、軸方向(X方向)に沿って圧縮応力が作用する。   The voltage application circuit 16 applies a voltage to the correction electrodes 38a and 38b described above on the basis of the resonance frequency detected by the frequency variation detection circuit 15, and thereby, between the correction electrodes 38a and 38b and the facing portion 40. Electrostatic attraction occurs. More specifically, an electrostatic attractive force is generated between the correction electrodes 38a and 38b and the facing portion 40 so that the extending portion 37 is attracted to the correction electrodes 38a and 38b. That is, a compressive stress acts on the vibrating piece 36 along the axial direction (X direction).

ところで、上述のような発振子は温度による共振周波数の変動が大きいという欠点がある。具体的には、発振子が作動すると、それに伴い発振子の温度が上昇する。ここで、物質のヤング率は温度に依存する性質を持っているため、発振子の温度が変化することで発振子の共振周波数が変動してしまう。そこで、発振子の温度変化による共振周波数の変動を補正する必要がある。   By the way, the oscillator as described above has a disadvantage that the resonance frequency varies greatly with temperature. Specifically, when the oscillator operates, the temperature of the oscillator increases accordingly. Here, since the Young's modulus of the substance has a property that depends on temperature, the resonance frequency of the oscillator varies as the temperature of the oscillator changes. Therefore, it is necessary to correct the variation of the resonance frequency due to the temperature change of the oscillator.

ここで、振動片36の共振周波数は、以下の式1によって決定される。なお、式1中E(T)は発振子のヤング率を温度の関数で表しており、式2はE(T)を基準温度Tの近傍でテイラー展開して2次式まで表したものである。また、式1,2中のfは振動片36の共振周波数、Tは発振子30の基準(初期)温度、Tは発振子30の測定温度、Eは温度Tにおける発振子30のヤング率、αは1次の温度係数、βは2次の温度係数、aは振動片の形状に依存する係数、Lは振動片の長さ、Wは振動片の幅、σは振動片の軸方向に作用する応力である。 Here, the resonance frequency of the resonator element 36 is determined by the following Equation 1. In Equation 1, E (T) expresses the Young's modulus of the oscillator as a function of temperature, and Equation 2 expresses E (T) by Taylor expansion in the vicinity of the reference temperature T 0 up to a quadratic equation. It is. In Equations 1 and 2, f 0 is the resonance frequency of the resonator element 36, T 0 is the reference (initial) temperature of the oscillator 30, T is the measured temperature of the oscillator 30, and E 0 is the oscillator 30 at the temperature T 0 . , Α is the primary temperature coefficient, β is the secondary temperature coefficient, a is a coefficient depending on the shape of the vibrating piece, L is the length of the vibrating piece, W is the width of the vibrating piece, and σ is the vibrating piece The stress acting in the axial direction.

ここで、式1において、L,Wは振動片36の寸法であり、設計段階で決定されるものである。また、E、a、α、βは定数である。したがって、温度T以外は全て設計段階で決定される定数である。つまり、振動片36の寸法によって基準温度T時における固有の共振周波数が決定される。 Here, in Equation 1, L and W are the dimensions of the resonator element 36 and are determined at the design stage. E 0 , a, α, and β are constants. Therefore, all the values except for the temperature T are constants determined at the design stage. That is, the specific resonance frequency at the reference temperature T 0 is determined by the size of the resonator element 36.

そして、温度による共振周波数fの変動を補正するためには、応力σを変化させ、式2の平方根の内部がEのみになるようにすればよい。つまり、発振子30の温度上昇に伴い、振動片36の軸方向(X方向)に沿って圧縮応力を作用させることで、温度変化によるヤング率の変化が相殺(キャンセル)される。この時のσは以下の式3で表される。 In order to correct the fluctuation of the resonance frequency f 0 due to temperature, the stress σ may be changed so that the inside of the square root of Equation 2 is only E 0 . That is, as the temperature of the oscillator 30 rises, a change in Young's modulus due to a temperature change is canceled (cancelled) by applying a compressive stress along the axial direction (X direction) of the resonator element 36. Σ at this time is expressed by the following Equation 3.

振動片36に圧縮応力σを作用させるには、補正電極38a,38bに電圧を印加して対向部40と補正電極38a,38bとの間に静電引力を発生させる。すると、対向部40は、補正電極38a,38bに引き寄せられることとなり、振動片36に圧縮応力が作用する。この時の補正電極38a,38bに印加する電圧は、以下の式4で表される。なお、式4中Sは振動片36の短手方向の断面積、gは補正電極38a,38bと対向部40とのギャップ、εは誘電率、L1,L2は対向部40の長さ、hは振動片36の厚さ(図2参照)とする。   In order to apply the compressive stress σ to the vibrating piece 36, a voltage is applied to the correction electrodes 38a and 38b to generate an electrostatic attractive force between the facing portion 40 and the correction electrodes 38a and 38b. Then, the facing portion 40 is attracted to the correction electrodes 38 a and 38 b, and compressive stress acts on the vibrating piece 36. The voltage applied to the correction electrodes 38a and 38b at this time is expressed by the following Expression 4. In Equation 4, S is a cross-sectional area in the short direction of the resonator element 36, g is a gap between the correction electrodes 38a and 38b and the facing portion 40, ε is a dielectric constant, L1 and L2 are lengths of the facing portion 40, h Is the thickness of the resonator element 36 (see FIG. 2).

次に、作用を説明する。
まず、駆動回路14から駆動電極33aに向けて駆動電圧を印加させることで、駆動電極33aと振動片36との間に静電引力が発生する。 First, by applying a drive voltage from the drive circuit 14 toward the drive electrode 33a, an electrostatic attraction is generated between the drive electrode 33a and the vibrating piece 36. その結果、振動片36が、Y方向、つまり振動片36の両側方にギャップを介して配置された駆動電極33a,検出電極33bに接近離間するように振動する。 As a result, the vibrating piece 36 vibrates in the Y direction, that is, so as to approach and separate the drive electrode 33a and the detection electrode 33b arranged on both sides of the vibrating piece 36 with a gap. 振動片36が振動すると、振動片36と各電極33a,33bとの間のギャップが変化し、振動片36と各電極33a,33bとの間の静電容量が変動する。 When the vibrating piece 36 vibrates, the gap between the vibrating piece 36 and the electrodes 33a and 33b changes, and the capacitance between the vibrating piece 36 and the electrodes 33a and 33b fluctuates. そして、その静電容量の変動が共振周波数として検出電極33bにより検出される。 Then, the fluctuation of the capacitance is detected by the detection electrode 33b as the resonance frequency. Next, the operation will be described. Next, the operation will be described.
First, by applying a drive voltage from the drive circuit 14 toward the drive electrode 33 a, an electrostatic attractive force is generated between the drive electrode 33 a and the vibrating piece 36. As a result, the vibration piece 36 vibrates so as to approach and separate from the drive electrode 33a and the detection electrode 33b disposed in the Y direction, that is, on both sides of the vibration piece 36 via a gap. When the vibrating piece 36 vibrates, the gap between the vibrating piece 36 and the electrodes 33a and 33b changes, and the capacitance between the vibrating piece 36 and the electrodes 33a and 33b changes. And the fluctuation | variation of the electrostatic capacitance is detected by the detection electrode 33b as a resonance frequency. First, by applying a drive voltage from the drive circuit 14 toward the drive electrode 33 a, an electrostatic attractive force is generated between the drive electrode 33 a and the vibrating piece 36. As a result, the vibration piece 36 vibrates so as to approach and separate from the drive electrode 33a and the detection electrode 33b disposed in the Y direction, that is, on both sides of the vibration piece 36 via a gap. When the vibrating piece 36 vibrates, the gap between the vibrating piece 36 and the electrodes 33a and 33b changes, and the electrostatic capacitance between the vibrating piece 36 and the electrodes 33a and 33b changes. And the fluctuation | variation of the electrostatic capacitance is detected by the detection electrode 33b as a resonance frequency.

検出電極33bにより検出された共振周波数の値は、検出信号として周波数変動検出回路15に出力される。検出信号を受信した周波数変動検出回路15は、予め設定された振動片36の共振周波数と検出信号に基づく共振周波数とを比較する。ここで、温度変化によって、検出信号に基づく共振周波数が、予め設定された共振周波数と比べ変動した場合には、例えば検出信号に基づく共振周波数が予め設定された共振周波数よりも高い場合には、振動片36に圧縮応力を作用させる。具体的には、周波数変動検出回路15が、周波数変動を圧縮応力で相殺するために、上述の式3により算出した補正に必要な圧縮応力値を算出する。そして、算出した圧縮応力値を上述した式4に代入することで補正電極38a,38bに印加する補正電圧が算出される。そして、周波数変動検出回路15は、算出した補正電圧を印加させる印加信号を駆動回路14に向けて出力する。駆動回路14は、この印加信号に基づいて補正電極38a,38bに補正電圧を印加する。   The value of the resonance frequency detected by the detection electrode 33b is output to the frequency fluctuation detection circuit 15 as a detection signal. The frequency fluctuation detection circuit 15 that has received the detection signal compares a preset resonance frequency of the resonator element 36 with a resonance frequency based on the detection signal. Here, when the resonance frequency based on the detection signal fluctuates in comparison with the preset resonance frequency due to temperature change, for example, when the resonance frequency based on the detection signal is higher than the preset resonance frequency, A compressive stress is applied to the vibrating piece 36. Specifically, the frequency fluctuation detection circuit 15 calculates a compressive stress value necessary for the correction calculated by the above-described equation 3 in order to cancel the frequency fluctuation with the compressive stress. Then, the correction voltage applied to the correction electrodes 38a and 38b is calculated by substituting the calculated compressive stress value into the above-described equation 4. Then, the frequency variation detection circuit 15 outputs an application signal for applying the calculated correction voltage to the drive circuit 14. The drive circuit 14 applies a correction voltage to the correction electrodes 38a and 38b based on the applied signal.

すると、補正電極38a,38bと対向部40との間に静電引力が発生し、振動片36にその軸方向(X方向)に沿った圧縮応力が作用する。これにより、周波数変動に応じた圧縮応力を振動片36に作用させることができ、振動片36の温度変化に対するヤング率の変化を相殺して、振動特性の変動を補正することができる。その結果、振動片36を、予め設定された所定の共振周波数で振動させ続けることができる。   Then, an electrostatic attractive force is generated between the correction electrodes 38 a and 38 b and the facing portion 40, and compressive stress along the axial direction (X direction) acts on the vibrating piece 36. As a result, a compressive stress corresponding to the frequency variation can be applied to the vibrating piece 36, and the change in the Young's modulus with respect to the temperature change of the vibrating piece 36 can be offset, and the variation in the vibration characteristics can be corrected. As a result, the resonator element 36 can continue to vibrate at a predetermined resonance frequency set in advance.

このように本実施形態の発振子30によれば、温度変化により振動片36の共振周波数が変化しようとするが、この変化を補正することができる。つまり、温度変化に対する振動片36の共振周波数の変動に基づいて、補正電極38a,38bに電圧を印加することで、補正電極38a,38bと対向部40との間に静電引力を発生させ、振動片36から分岐した一対の対向部40を引き寄せる。これにより、振動片36に対して軸方向(X方向)に沿う応力を作用させることができ、温度変化よって生じたヤング率の変化を補正することができる。
よって、発振子30のヤング率を基準温度時のヤング率に一定に維持することができるため、振動特性の変動を抑制することができる。 Therefore, since the Young's modulus of the oscillator 30 can be kept constant at the Young's modulus at the reference temperature, fluctuations in the vibration characteristics can be suppressed. その結果、温度変化による振動片36の周波数変動を相殺でき、温度特性の補正を行うことができる。 As a result, the frequency fluctuation of the vibrating piece 36 due to the temperature change can be offset, and the temperature characteristic can be corrected. 特に、従来のようにPLL回路103(図18参照)を利用したデジタル的な温度補正を行う場合に比べ、温度変化に対応した圧縮応力を加えるというアナログ的な温度補正なので、ノイズが発生する等のデジタル処理特有の不都合が生じない。 In particular, compared to the case where digital temperature correction using the PLL circuit 103 (see FIG. 18) is performed as in the conventional case, noise is generated because it is an analog temperature correction in which compressive stress corresponding to a temperature change is applied. There is no inconvenience peculiar to digital processing. したがって、温度特性の補正を高精度かつ効率的に行うことができ、高性能化を図ることができる。 Therefore, the temperature characteristics can be corrected with high accuracy and efficiency, and high performance can be achieved. As described above, according to the resonator 30 of the present embodiment, the resonance frequency of the resonator element 36 tends to change due to a temperature change, but this change can be corrected. That is, by applying a voltage to the correction electrodes 38a and 38b based on the fluctuation of the resonance frequency of the resonator element 36 with respect to the temperature change, an electrostatic attractive force is generated between the correction electrodes 38a and 38b and the facing portion 40, The pair of facing portions 40 branched from the vibrating piece 36 are pulled together. Thereby, the stress along the axial direction (X direction) can be applied to the vibrating piece 36, and the change in the Young's modulus caused by the temperature change can be corrected. As described above, according to the resonator 30 of the present embodiment, the resonance frequency of the resonator element 36 tends to change due to a temperature change, but this change can be corrected. That is, by applying a voltage to the correction electrodes 38a and 38b based on the fluctuation of the resonance frequency of the resonator element 36 with respect to the temperature change, an electrostatic attractive force is generated between the correction electrodes 38a and 38b and the facing portion 40, The pair of facing portions 40 conventionally from the vibrating piece 36 are pulled together. Thus, the stress along the axial direction (X direction) can be applied to the vibrating piece 36, and the change in the Young's modulus caused by the temperature change can be corrected.
Therefore, since the Young's modulus of the oscillator 30 can be kept constant at the Young's modulus at the reference temperature, fluctuations in vibration characteristics can be suppressed. As a result, it is possible to cancel the frequency fluctuation of the vibrating piece 36 due to the temperature change, and to correct the temperature characteristic. In particular, compared to the conventional digital temperature correction using the PLL circuit 103 (see FIG. 18), the analog temperature correction involves applying a compressive stress corresponding to the temperature change, so that noise is generated. Inconvenience peculiar to digital processing does not occur. Therefore, the temperature characteristic can be corrected with high accuracy and efficiency, and high performance can be achieved. Therefore, since the Young's modulus of the oscillator 30 can be kept constant at the Young's modulus at the reference temperature, fluctuations in vibration characteristics can be suppressed. As a result, it is possible to cancel the frequency fluctuation of the vibrating piece 36 due to The temperature change, and to correct the temperature characteristic. In particular, compared to the conventional digital temperature correction using the PLL circuit 103 (see FIG. 18), the analog temperature correction involves applying a compressive stress corresponding to the temperature change, so that noise is generated. Inconvenience peculiar to digital processing does not occur. Therefore, the temperature characteristic can be corrected with high accuracy and efficiency, and high performance can be achieved.

ところで、振動片36の基準温度時における共振周波数は、振動片36の寸法によって決定されるので、振動片36に作用させる圧縮応力を予め周波数変動検出回路15に記憶させておくことができる。したがって、PLL回路103のような複雑な回路を設ける必要もなく、構成の簡素化が可能となる。   Incidentally, since the resonance frequency of the vibrating piece 36 at the reference temperature is determined by the size of the vibrating piece 36, the compressive stress applied to the vibrating piece 36 can be stored in the frequency fluctuation detection circuit 15 in advance. Therefore, it is not necessary to provide a complicated circuit such as the PLL circuit 103, and the configuration can be simplified.

また、一対の対向部40は、振動片36とともに振動するが、振動片36の延出方向(X方向)に直交するY方向に向けて、それぞれ同一ポイントからそれぞれ同じ長さだけ延出しているので、重量のバランスがとられている。そのため、振動片36の振動特性に影響を与えることがない。したがって、対向部40を補正電極38a,38bに引き寄せた時に、振動片36に作用する圧縮応力が振動片36の軸方向(X方向)に向けて作用しやすく、振動特性の変動を効率的に抑制することができる。
さらに、振動片36が振動子アイランド34に片持ち状で支持されることで、振動の変位を大きくすることができ、効率的に周波数信号を出力できる。 Further, since the vibrating piece 36 is cantileveredly supported by the vibrator island 34, the displacement of the vibration can be increased and the frequency signal can be efficiently output. また、振動片36に作用する支持応力が少ない振動子32を得ることができる。 Further, it is possible to obtain an oscillator 32 having a small supporting stress acting on the vibrating piece 36. The pair of opposed portions 40 vibrate together with the vibrating piece 36, but extend from the same point by the same length in the Y direction orthogonal to the extending direction (X direction) of the vibrating piece 36. So the weight is balanced. Therefore, the vibration characteristics of the vibrating piece 36 are not affected. Therefore, when the facing portion 40 is drawn to the correction electrodes 38a and 38b, the compressive stress acting on the vibrating piece 36 is likely to act in the axial direction (X direction) of the vibrating piece 36, and fluctuations in vibration characteristics are efficiently performed. Can be suppressed. The pair of opposed portions 40 vibrate together with the vibrating piece 36, but extend from the same point by the same length in the Y direction orthogonal to the extending direction (X direction) of the vibrating piece 36. So the weight is balanced. Therefore , the vibration characteristics of the vibrating piece 36 are not affected. Therefore, when the facing portion 40 is drawn to the correction electrodes 38a and 38b, the compressive stress acting on the vibrating piece 36 is likely to act in the axial direction (X direction) ) of the vibrating piece 36, and fluctuations in vibration characteristics are efficiently performed. Can be suppressed.
Furthermore, since the vibrating piece 36 is cantilevered by the vibrator island 34, the displacement of the vibration can be increased and a frequency signal can be output efficiently. In addition, it is possible to obtain the vibrator 32 with less support stress acting on the vibration piece 36. In addition, it is possible to obtain the vibrator 32 with less support stress acting on the further, since the vibrating piece 36 is cantilevered by the vibrator island 34, the displacement of the vibration can be increased and a frequency signal can be output efficiently. vibration piece 36.

このように本実施形態の発振器10によれば、振動片36の温度変化に対するヤング率の変化を補正して、振動特性の変動を補正することができる。特に、アナログ的に温度補正を行うことができる発振子30を有しているので、PLL回路のような複雑な回路を設ける必要がない。よって、設計の簡素化及び製造コストを削減することができる。また、アナログ的な回路によって印加電圧を変化させることができるため、印加電圧の調整が連続的となり、PLL回路のようなデジタル的な回路に比べ、周波数の変動が滑らかになる。そのため、温度特性の補正を効率的に行うことができ、高性能な発振器10を提供することができる。   As described above, according to the oscillator 10 of the present embodiment, it is possible to correct the variation of the vibration characteristics by correcting the change of the Young's modulus with respect to the temperature change of the resonator element 36. In particular, since the oscillator 30 capable of performing temperature correction in an analog manner is provided, it is not necessary to provide a complicated circuit such as a PLL circuit. Therefore, simplification of design and manufacturing cost can be reduced. In addition, since the applied voltage can be changed by an analog circuit, the adjustment of the applied voltage is continuous, and the frequency fluctuation is smooth as compared with a digital circuit such as a PLL circuit. Therefore, the temperature characteristics can be corrected efficiently, and the high-performance oscillator 10 can be provided.

(第2実施形態)
次に、図6に基づいて本発明の第2実施形態として、発振子の他の構成について説明する。図6は、第2実施形態に係る発振子の平面図である。なお、本実施形態では、第1実施形態と同様の構成については同一符号を付し説明は省略する。
(Second Embodiment)
Next, another configuration of the oscillator will be described as a second embodiment of the present invention with reference to FIG. FIG. 6 is a plan view of the resonator according to the second embodiment. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

図6に示すように、本実施形態の発振子50は、振動片36の基端部35及び先端部39の両端側にそれぞれ応力発生部41が形成された振動子46を備えている。より詳述に説明すると、振動子46には、振動片36の両端部35,39の同一ポイントから振動片36の軸方向(X方向)に直交するY方向に向けて、それぞれ同じ長さだけ延出した一対の延出部37が2組形成されている。   As shown in FIG. 6, the resonator 50 according to the present embodiment includes a vibrator 46 in which stress generating portions 41 are formed on both ends of the proximal end portion 35 and the distal end portion 39 of the vibrating piece 36. More specifically, the vibrator 46 has the same length from the same point of both end portions 35 and 39 of the vibrating piece 36 toward the Y direction orthogonal to the axial direction (X direction) of the vibrating piece 36. Two sets of extended pair of extending portions 37 are formed.

各延出部37の間、つまり振動片36の基端部35側の延出部37と先端部39側の延出部37に挟まれた領域には、補正電極42a,42bが設けられている。この補正電極42a、42bは上述した各電極33a,33bの側方に,各延出部37及び各電極33a,33bと所定のギャップを有しつつ、配置されている。なお、各延出部37と補正電極42a,42bとが対向している領域は、対向部40として構成されており、各対向部40は各々等しいギャップ(例えば、図6中g)を有している。   Correction electrodes 42a and 42b are provided between the extending portions 37, that is, in a region sandwiched between the extending portion 37 on the base end portion 35 side of the vibrating piece 36 and the extending portion 37 on the distal end portion 39 side. Yes. The correction electrodes 42a and 42b are arranged on the sides of the above-described electrodes 33a and 33b while having predetermined gaps with the extending portions 37 and the electrodes 33a and 33b. In addition, the area | region where each extension part 37 and correction | amendment electrodes 42a and 42b have opposed is comprised as the opposing part 40, and each opposing part 40 has an equal gap (for example, g in FIG. 6), respectively. ing.

したがって、本実施形態によれば、第1実施形態と同様の効果を奏することができるとともに、振動片36の基端部35側と先端部39側との両端側にそれぞれ応力発生部41が形成されているため、補正電極42a,42bに電圧が印加されると、補正電極42a,42bと両延出部37との間に静電引力が発生する。つまり、振動片36には、その両端部35,39から振動片36の軸方向(X方向)に沿って圧縮応力がそれぞれ作用することとなる。これにより、振動片36に作用する圧縮応力分布が均一になるとともに、振動片36に圧縮応力が作用しやすくなる。つまり振動時には、上述した式3中における係数aを大きくできるので、作用させる圧縮応力が小さくて済む。したがって、補正電極42a,42bに印加する補正電圧を低くしたとしても、必要な圧縮応力を作用させることができるので、省電力化を図ることができる。
また、対向部40と補正電極42a,42bとの対向面積を増加させることができるため、補正電極42a,42bに印加する電圧を抑制することができる。 Further, since the facing area between the facing portion 40 and the correction electrodes 42a and 42b can be increased, the voltage applied to the correction electrodes 42a and 42b can be suppressed. この点においても、省電力化が可能となる。 In this respect as well, power saving is possible. Therefore, according to the present embodiment, the same effects as those of the first embodiment can be obtained, and the stress generating portions 41 are formed on both end sides of the proximal end portion 35 side and the distal end portion 39 side of the vibrating piece 36, respectively. Therefore, when a voltage is applied to the correction electrodes 42a and 42b, an electrostatic attractive force is generated between the correction electrodes 42a and 42b and the extending portions 37. That is, compressive stress acts on the vibrating piece 36 from both ends 35 and 39 along the axial direction (X direction) of the vibrating piece 36. As a result, the distribution of compressive stress acting on the vibrating piece 36 becomes uniform, and the compressive stress easily acts on the vibrating piece 36. That is, at the time of vibration, the coefficient a in Equation 3 described above can be increased, so that the applied compressive stress can be reduced. Therefore, even if the corre Therefore, according to the present embodiment, the same effects as those of the first embodiment can be obtained, and the stress generating portions 41 are formed on both end sides of the proximal end portion 35 side and the distal end portion 39 side of the vibrating. piece 36, respectively. Therefore, when a voltage is applied to the correction electrodes 42a and 42b, an electrostatic attractive force is generated between the correction electrodes 42a and 42b and the extending portions 37. That is, compressive stress acts on the vibrating piece 36 from both ends 35 and 39 along the axial direction (X direction) of the vibrating piece 36. As a result, the distribution of compressive stress acting on the vibrating piece 36 becomes uniform, and the compressive stress easily acts on the vibrating piece 36. That is, at the time of vibration, the coefficient a in Equation 3 described above can be increased, so that the applied compressive stress can be reduced. Therefore, even if the corre ction voltage applied to the correction electrodes 42a and 42b is lowered, the necessary compressive stress can be applied, so that power saving can be achieved. ction voltage applied to the correction electrodes 42a and 42b is lowered, the necessary compressive stress can be applied, so that power saving can be achieved.
Moreover, since the opposing area of the opposing part 40 and correction electrode 42a, 42b can be increased, the voltage applied to correction electrode 42a, 42b can be suppressed. Also in this respect, power saving can be achieved. Moreover, since the approaching area of ​​the subjecting part 40 and correction electrode 42a, 42b can be increased, the voltage applied to correction electrode 42a, 42b can be suppressed. Also in this respect, power saving can be achieved.

(第3実施形態)
次に、図7,8に基づいて本発明の第3実施形態として、発振子の他の構成について説明する。図7は、第3実施形態に係る発振子の平面図であり、図8は図7のC部拡大図である。なお、本実施形態では、第1実施形態と同様の構成については同一符号を付し説明は省略する。
(Third embodiment)

Next, another configuration of the resonator will be described as a third embodiment of the present invention with reference to FIGS. FIG. 7 is a plan view of the resonator according to the third embodiment, and FIG. 8 is an enlarged view of a portion C in FIG. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted. Next, another configuration of the resonator will be described as a third embodiment of the present invention with reference to FIGS. FIG. 7 is a plan view of the resonator according to the third embodiment, and FIG. 8 is an enlarged view of a portion. C in FIG. In the present embodiment, the same components as those in the first embodiment are transfected by the same reference numerals, and description thereof is omitted.

図7に示すように、本実施形態の発振子60は、振動片36の先端部39における同一ポイントから平面視コ字状の延出部61が形成された振動子48を備えている。延出部61は、一部分が櫛歯状に形成されている。具体的には、延出部61のX方向に沿う二辺の側面には、延出部61の内側に延出(すなわち、互いの辺に向けて延出)する多数の対向部62が形成されている。これら多数の対向部62は、延出部61の側面に直交するY方向に向けて櫛歯状に延出している。   As shown in FIG. 7, the oscillator 60 according to the present embodiment includes a vibrator 48 in which an extension portion 61 having a U-shape in plan view is formed from the same point at the tip portion 39 of the resonator element 36. A part of the extending portion 61 is formed in a comb shape. Specifically, on the two side surfaces along the X direction of the extending portion 61, a large number of facing portions 62 that extend inside the extending portion 61 (that is, extend toward each other) are formed. Has been. These many opposing parts 62 are extended in the comb-tooth shape toward the Y direction orthogonal to the side surface of the extension part 61.

そして、延出部61に囲まれた領域には、一部分が櫛歯状に形成された補正電極63が配置されている。つまり、この補正電極63の長手方向に沿う両側面には、両側面に直交する方向(Y方向)に延出する多数の櫛歯電極64が形成されている。そして、櫛歯電極64と上述した対向部62とは、1つ1つ所定のギャップを空けて互い違いに配置されている。以上により本実施形態の応力発生部65が構成されている。   In a region surrounded by the extending portion 61, a correction electrode 63 that is partially formed in a comb shape is disposed. That is, a large number of comb electrodes 64 are formed on both side surfaces along the longitudinal direction of the correction electrode 63 so as to extend in a direction perpendicular to the both side surfaces (Y direction). And the comb-tooth electrode 64 and the opposing part 62 mentioned above are alternately arrange | positioned at predetermined gaps one by one. The stress generating part 65 of this embodiment is configured as described above.

櫛歯電極64と対向部62との位置関係を、より詳細に説明すると、図8に示すように、対向部62は、長手方向に沿う両側面62a,62bが補正電極63の櫛歯電極64と所定のギャップを有して挟まれるように配置されている。より詳述に説明すると、対向部62と櫛歯電極64との間のギャップは、一方の側面62b、つまり振動片36側に向かう側面62b側のギャップg1が、他方の側面62a側のギャップg2に比べ、狭く設定されている。これにより、櫛歯電極64と対向部62との間に発生する静電引力のうち、ギャップg1に発生する静電引力をギャップg2に発生する静電引力に比べ強くすることができるため、振動片36の軸方向(X方向)に沿う圧縮応力を効率的に作用させることができる。   The positional relationship between the comb-shaped electrode 64 and the facing portion 62 will be described in more detail. As shown in FIG. 8, the facing portion 62 has comb-shaped electrodes 64 whose side surfaces 62 a and 62 b along the longitudinal direction are correction electrodes 63. And are arranged so as to be sandwiched with a predetermined gap. More specifically, the gap between the facing portion 62 and the comb electrode 64 is that one side surface 62b, that is, the gap g1 on the side surface 62b toward the vibrating element 36 side, and the gap g2 on the other side surface 62a side. It is set narrower than. As a result, among the electrostatic attractive forces generated between the comb electrode 64 and the facing portion 62, the electrostatic attractive force generated in the gap g1 can be made stronger than the electrostatic attractive force generated in the gap g2. The compressive stress along the axial direction (X direction) of the piece 36 can be applied efficiently.

本実施形態において、振動片36に応力σを作用させるために補正電極63に印加する電圧は、以下の式5で表される。なお、式5中g1、g2は櫛歯電極と対向部とのギャップ、Nは櫛歯電極の本数、yは櫛歯電極の長さである。   In the present embodiment, the voltage applied to the correction electrode 63 in order to apply the stress σ to the resonator element 36 is expressed by the following Expression 5. In Equation 5, g1 and g2 are gaps between the comb-tooth electrode and the facing portion, N is the number of comb-tooth electrodes, and y is the length of the comb-tooth electrode.

したがって、本実施形態によれば、第1実施形態と同様の効果を奏することができることに加え、それぞれ櫛歯状に形成された櫛歯電極64と対向部62とを各々互い違いに配置したため、補正電極63と対向部62との対向面積をより増加させることができる。これにより、振動片36に対してさらに効率的に圧縮応力を作用させることができるため、補正電極63に印加する電圧を抑制することができる。よって、さらなる省電力化が可能となり、高性能な発振子60を提供することができる。
また、平面視コ字状に形成された延出部61に囲まれた領域に補正電極63を配置するとともに、対向部62が延出部61の内側に延出しているため、1つの補正電極63から両側方に向けて櫛歯電極64を延出させることができ、補正電極63を2つ設ける必要がない。 Further, since the correction electrode 63 is arranged in the region surrounded by the extension portion 61 formed in a U-shape in a plan view and the facing portion 62 extends inside the extension portion 61, one correction electrode is provided. The comb tooth electrodes 64 can be extended from 63 toward both sides, and it is not necessary to provide two correction electrodes 63. したがって、製造コストを削減することができるとともに、レイアウト性を向上させることができる。 Therefore, the manufacturing cost can be reduced and the layout can be improved. Therefore, according to this embodiment, in addition to being able to achieve the same effect as in the first embodiment, the comb-shaped electrodes 64 and the facing portions 62 formed in a comb-tooth shape are alternately arranged, so that the correction is performed. The facing area between the electrode 63 and the facing portion 62 can be further increased. As a result, a compressive stress can be applied to the vibrating piece 36 more efficiently, so that the voltage applied to the correction electrode 63 can be suppressed. Therefore, further power saving can be achieved and the high-performance oscillator 60 can be provided. Therefore, according to this embodiment, in addition to being able to achieve the same effect as in the first embodiment, the comb-shaped electrodes 64 and the facing portions 62 formed in a comb-tooth shape are appropriately arranged, so that the correction is The facing area between the electrode 63 and the facing portion 62 can be further increased. As a result, a compressive stress can be applied to the vibrating piece 36 more efficiently, so that the voltage applied to the correction electrode 63 can be suppressed. . Therefore, further power saving can be achieved and the high-performance oscillator 60 can be provided.
In addition, since the correction electrode 63 is disposed in a region surrounded by the extension portion 61 formed in a U shape in plan view, and the opposing portion 62 extends inside the extension portion 61, one correction electrode is provided. Comb electrode 64 can be extended from 63 to both sides, and it is not necessary to provide two correction electrodes 63. Therefore, the manufacturing cost can be reduced and the layout can be improved. In addition, since the correction electrode 63 is disposed in a region surrounded by the extension portion 61 formed in a U shape in plan view, and the requiring portion 62 extends inside the extension portion 61, one correction electrode is provided. Comb electrode 64 can be extended from 63 to both sides, and it is not necessary to provide two correction electrodes 63. Therefore, the manufacturing cost can be reduced and the layout can be improved.

(第4実施形態)
次に、図9〜11に基づいて本発明の第4実施形態として、発振子の他の構成について説明する。 Next, another configuration of the oscillator will be described as a fourth embodiment of the present invention based on FIGS. 9 to 11. 図9は、第4実施形態に係る発振子の平面図であり、図10は図9のD部拡大図、図11は図9のE部拡大図である。 9 is a plan view of the oscillator according to the fourth embodiment, FIG. 10 is an enlarged view of part D of FIG. 9, and FIG. 11 is an enlarged view of part E of FIG. なお、本実施形態では、第3実施形態と同様の構成については同一符号を付し説明は省略する。 In the present embodiment, the same reference numerals are given to the same configurations as those in the third embodiment, and the description thereof will be omitted. (Fourth embodiment) (Fourth embodiment)
Next, another configuration of the oscillator will be described as a fourth embodiment of the present invention with reference to FIGS. 9 is a plan view of the resonator according to the fourth embodiment, FIG. 10 is an enlarged view of a D portion in FIG. 9, and FIG. 11 is an enlarged view of an E portion in FIG. In the present embodiment, the same components as those in the third embodiment are denoted by the same reference numerals, and description thereof is omitted. Next, another configuration of the oscillator will be described as a fourth embodiment of the present invention with reference to FIGS. 9 is a plan view of the resonator according to the fourth embodiment, FIG. 10 is an enlarged view of a D portion in FIG. 9, and FIG. 11 is an enlarged view of an E portion in FIG. In the present embodiment, the same components as those in the third embodiment are transfected by the same reference numerals, and description thereof is omitted.

図9に示すように、本実施形態の発振子70は、振動片36の基端部35側と先端部39側の両端側にそれぞれ第3実施形態の応力発生部65が設けられた振動子49を備えている。
より詳述に説明すると、振動子49には、振動片36の両端部35,39から延出した各延出部61のX方向に沿う二辺の側面に、延出部61の内側、つまり互いの辺に向けて延出する多数の対向部62が形成されている。 More specifically, the vibrator 49 has the inside of the extension 61, that is, on the side surfaces of the two sides of the extension 61 extending from both ends 35 and 39 of the vibration piece 36 along the X direction. A large number of facing portions 62 extending toward each other are formed. 各対向部62は、延出部61の側面に直交するY方向に向けて櫛歯状に延出している。 Each of the facing portions 62 extends in a comb-teeth shape in the Y direction orthogonal to the side surface of the extending portion 61. As shown in FIG. 9, the oscillator 70 according to the present embodiment is a vibrator in which the stress generating portions 65 of the third embodiment are provided on both the proximal end 35 side and the distal end 39 side of the resonator element 36. 49. As shown in FIG. 9, the oscillator 70 according to the present embodiment is a vibrator in which the stress generating portions 65 of the third embodiment are provided on both the proximal end 35 side and the distal end 39 side of the resonator element 36. 49.
More specifically, the vibrator 49 has two side surfaces along the X direction of the extending portions 61 extending from both end portions 35 and 39 of the vibrating piece 36, inside the extending portion 61, that is, A large number of facing portions 62 extending toward the sides are formed. Each facing portion 62 extends in a comb shape toward the Y direction orthogonal to the side surface of the extending portion 61. More specifically, the vibrator 49 has two side surfaces along the X direction of the extending portions 61 extending from both end portions 35 and 39 of the vibrating piece 36, inside the extending portion 61, that is, A large number of facing portions 62 extending Each facing portion 62 extends in a comb shape toward the Y direction orthogonal to the side surface of the extending portion 61.

そして、延出部61に囲まれた領域には、補正電極63が配置され、この補正電極63の長手方向に沿う両側面には、両側面に直交する方向(Y方向)に延出する多数の櫛歯電極64が形成されている。この櫛歯電極64は、補正電極63から櫛歯状に延出しており、櫛歯電極64と上述した対向部62とが、1つ1つ所定のギャップを空けて互い違いに配置されている。
図10,11に示すように、各対向部62と櫛歯電極64との間のギャップは、振動片36側に向かう側面62bのギャップg1が、他方の側面62aのギャップに比べ狭く形成されている。 As shown in FIGS. 10 and 11, the gap between each of the facing portions 62 and the comb tooth electrode 64 is such that the gap g1 of the side surface 62b facing the vibrating piece 36 side is narrower than the gap of the other side surface 62a. There is. A correction electrode 63 is arranged in a region surrounded by the extending portion 61, and a large number of both side surfaces along the longitudinal direction of the correction electrode 63 extend in a direction (Y direction) orthogonal to the both side surfaces. The comb electrode 64 is formed. The comb electrodes 64 extend in a comb shape from the correction electrode 63, and the comb electrodes 64 and the above-described facing portions 62 are alternately arranged with a predetermined gap therebetween. A correction electrode 63 is arranged in a region surrounded by the extending portion 61, and a large number of both side surfaces along the longitudinal direction of the correction electrode 63 extend in a direction (Y direction) orthogonal to the both side surfaces. The comb electrode 64 is formed. The comb electrodes 64 extend in a comb shape from the correction electrode 63, and the comb electrodes 64 and the above-described facing portions 62 are appropriately arranged with a predetermined gap accurately.
As shown in FIGS. 10 and 11, the gap between each facing portion 62 and the comb electrode 64 is formed such that the gap g1 of the side surface 62b toward the vibrating piece 36 side is narrower than the gap of the other side surface 62a. Yes. As shown in FIGS. 10 and 11, the gap between each facing portion 62 and the comb electrode 64 is formed such that the gap g1 of the side surface 62b toward the vibrating piece 36 side is narrower than the gap of the other side surface 62a . Yes.

したがって、本実施形態によれば、第3実施形態と同様の効果を奏するとともに、振動片36の両端部35,39にそれぞれ櫛歯状の応力発生部65が形成されているため、振動片36の両端から圧縮応力を作用させることができる。これにより、振動片36に作用する圧縮応力分布が均一になるとともに、振動片36に圧縮応力が作用しやすくなる。つまり、第2実施形態と同様に、式3中における係数aを大きくでき、作用させる圧縮応力が小さくて済む。したがって、印加する補正電圧を低くしたとしても、必要な圧縮応力を作用させることができ、さらなる省電力化を図った上で、高性能な発振子70を提供することができる。   Therefore, according to the present embodiment, the same effect as that of the third embodiment is achieved, and the comb-like stress generating portions 65 are formed at both end portions 35 and 39 of the vibrating piece 36, respectively. Compressive stress can be applied from both ends. As a result, the distribution of compressive stress acting on the vibrating piece 36 becomes uniform, and the compressive stress easily acts on the vibrating piece 36. That is, as in the second embodiment, the coefficient a in Equation 3 can be increased, and the applied compressive stress can be reduced. Therefore, even if the correction voltage to be applied is lowered, the necessary compressive stress can be applied, and the high-performance oscillator 70 can be provided after further power saving.

(第5実施形態)
次に、図12に基づいて本発明の第5実施形態として、発振子の他の構成について説明する。図12は、第5実施形態に係る発振子の平面図である。なお、本実施形態では、第1実施形態と同様の構成については同一符号を付し説明は省略する。
(Fifth embodiment)
Next, another configuration of the oscillator will be described as a fifth embodiment of the present invention with reference to FIG. FIG. 12 is a plan view of the resonator according to the fifth embodiment. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

図12に示すように、本実施形態の発振子79は、一対の振動子アイランド(ベース部)81a,81bと、これら振動子アイランド81a,81bに両持ち状に支持された振動片82と、を備えた平面視略I字状の振動子80を備えている。   As shown in FIG. 12, an oscillator 79 according to this embodiment includes a pair of vibrator islands (base portions) 81a and 81b, and a vibrator element 82 supported by the vibrator islands 81a and 81b in a cantilever manner. And a substantially I-shaped vibrator 80 in plan view.

振動子アイランド81a,81bは、平面視矩形状のものであり、上述した片持ち状の振動片36(図2参照)と同様にシリコン支持層11上にBOX層12を介して形成されている。
振動片82は、振動子アイランド81a,81bからX方向に延出するとともに、X方向に直交するY方向に振動可能なものであり、基端部85a,85bを介して振動子アイランド81a,81b間を架け渡すように連結されている。振動片82は、シリコン支持層11(図2参照)との間にギャップを有しつつ延出している。
The vibrator islands 81a and 81b have a rectangular shape in plan view, and are formed on the silicon support layer 11 via the BOX layer 12 in the same manner as the cantilever vibrating piece 36 (see FIG. 2) described above. .
The vibrating piece 82 extends from the transducer islands 81a and 81b in the X direction and can vibrate in the Y direction orthogonal to the X direction, and the transducer islands 81a and 81b via the base end portions 85a and 85b. It is connected so as to bridge the gap. The vibrating piece 82 extends with a gap between it and the silicon support layer 11 (see FIG. 2). The vibrating piece 82 extends from the transducer islands 81a and 81b in the X direction and can vibrate in the Y direction orthogonal to the X direction, and the transducer islands 81a and 81b via the base end portions 85a and 85b. It is connected so as to bridge the gap. The vibrating piece 82 extends with a gap between it and the silicon support layer 11 (see FIG. 2).

ここで、振動片82の一方の基端部85b側には応力発生部86が形成されている。この応力発生部86は、振動片82の基端部85bの同一ポイントからの軸方向(X方向)に直交する方向に、それぞれ同じ長さだけ延出する一対の延出部87と、延出部87の長手方向に沿う側面と所定のギャップgを有しつつ対向配置された補正電極88a,88bとを備えている。   Here, a stress generating portion 86 is formed on the one base end portion 85 b side of the vibrating piece 82. The stress generating portion 86 includes a pair of extending portions 87 extending in the direction orthogonal to the axial direction (X direction) from the same point of the base end portion 85b of the vibrating piece 82, and an extending portion. The side surface along the longitudinal direction of the part 87 and the correction electrodes 88a and 88b arranged to face each other with a predetermined gap g are provided.

このように構成された本実施形態の発振子79によれば、上述の第1実施形態と同様の効果を奏することに加え、振動片82を両持ち状に支持しているので、上述の片持ち状に支持された振動片に比べ、安定した振動特性を得ることができる。 According to the resonator 79 of the present embodiment configured as described above, in addition to the same effects as those of the first embodiment described above, the vibration piece 82 is supported in a doubly supported manner. Stable vibration characteristics can be obtained as compared with a vibrating piece supported like a hand.

(第6実施形態)
次に、図13に基づいて本発明の第6実施形態として、発振子の他の構成について説明する。 Next, another configuration of the oscillator will be described as a sixth embodiment of the present invention based on FIG. 図13は、第6実施形態に係る発振子の平面図である。 FIG. 13 is a plan view of the oscillator according to the sixth embodiment. なお、本実施形態では、第5実施形態と同様の構成については同一符号を付し説明は省略する。 In the present embodiment, the same reference numerals are given to the same configurations as those in the fifth embodiment, and the description thereof will be omitted. (Sixth embodiment) (Sixth embodiment)
Next, another configuration of the oscillator will be described as a sixth embodiment of the present invention with reference to FIG. FIG. 13 is a plan view of the resonator according to the sixth embodiment. In the present embodiment, the same components as those in the fifth embodiment are denoted by the same reference numerals, and description thereof is omitted. Next, another configuration of the oscillator will be described as a sixth embodiment of the present invention with reference to FIG. FIG. 13 is a plan view of the resonator according to the sixth embodiment. In the present embodiment, the same components as those in the fifth embodiment are transfected by the same reference numerals, and description thereof is omitted.

図13に示すように、本実施形態の発振子83は、振動片82の両基端部85a,85bに応力発生部86が形成された振動子67を備えている。より詳述に説明すると、振動子67には、振動片82の両端部85a,85の同一ポイントから振動片82の軸方向(X方向)に直交するY方向に向けて、それぞれ同じ長さだけ延出した延出部87が形成されている。   As shown in FIG. 13, the oscillator 83 according to the present embodiment includes a vibrator 67 in which stress generating portions 86 are formed at both base end portions 85 a and 85 b of the vibrating piece 82. More specifically, the vibrator 67 has the same length from the same point on both ends 85a and 85 of the resonator element 82 in the Y direction orthogonal to the axial direction (X direction) of the resonator element 82. An extending portion 87 that extends is formed.

各延出部87に挟まれた領域には、補正電極84a,84bが設けられている。この補正電極84a,84bは上述した各電極33a,33bの側方に,各延出部87及び各電極33a,33bと所定のギャップを有しつつ、配置されている。なお、各延出部87と補正電極84a,84bとが対向している領域は、対向部89として構成されており、各対向部89は各々等しいギャップ(例えば、図13中g)を有している。   Correction electrodes 84a and 84b are provided in regions sandwiched between the extending portions 87. The correction electrodes 84a and 84b are arranged on the sides of the above-described electrodes 33a and 33b while having a predetermined gap with the extending portions 87 and the electrodes 33a and 33b. A region where each extending portion 87 and the correction electrodes 84a and 84b face each other is configured as a facing portion 89, and each facing portion 89 has an equal gap (for example, g in FIG. 13). ing.

このように構成された本実施形態の発振子83によれば、上述の第5実施形態と同様の効果を奏することに加え、振動片82の両基端部85a,85bから圧縮応力が作用するため、補正電極84a,84bに印加する補正電圧をより低くしたとしても、必要な圧縮応力を確実に作用させることができるので、省電力化を図ることができる。また、対向部89と補正電極84a,84bとの対向面積を増加させることができるため、補正電極84a,84bに印加する電圧を抑制することができ、省電力化が可能となる。   According to the oscillator 83 of the present embodiment configured as described above, in addition to the same effects as those of the fifth embodiment described above, compressive stress acts from both base end portions 85a and 85b of the resonator element 82. For this reason, even if the correction voltage applied to the correction electrodes 84a and 84b is made lower, the necessary compressive stress can be reliably applied, so that power saving can be achieved. Further, since the facing area between the facing portion 89 and the correction electrodes 84a and 84b can be increased, the voltage applied to the correction electrodes 84a and 84b can be suppressed, and power saving can be achieved.

(第7実施形態)
次に、図14に基づいて本発明の第7実施形態として、発振子の他の構成について説明する。図14は、第7実施形態に係る発振子の平面図である。なお、本実施形態では、第5実施形態と同様の構成については同一符号を付し説明は省略する。
(Seventh embodiment)
Next, another configuration of the oscillator will be described as a seventh embodiment of the present invention with reference to FIG. FIG. 14 is a plan view of the resonator according to the seventh embodiment. In the present embodiment, the same components as those in the fifth embodiment are denoted by the same reference numerals, and description thereof is omitted.

図14に示すように、本実施形態の発振子90は、振動片82の一方の基端部85bに、基端部85bにおける同一ポイントから平面視コ字状に延出部92が形成された振動子73を備えている。振動子73の延出部92は、振動片82の両側方を囲むように形成されており、一部分が櫛歯状に形成されている。具体的には、延出部92のX方向に沿う二辺の側面に、側方に向けて延出する多数の対向部93が形成されている。これら多数の対向部93は、延出部92のX方向に沿う側面に直交するY方向に向けて櫛歯状に延出している。   As illustrated in FIG. 14, in the resonator 90 according to the present embodiment, an extension portion 92 is formed on one base end portion 85 b of the resonator element 82 from the same point in the base end portion 85 b in a U shape in plan view. A vibrator 73 is provided. The extending portion 92 of the vibrator 73 is formed so as to surround both sides of the vibrating piece 82, and a part thereof is formed in a comb shape. Specifically, a large number of facing portions 93 extending sideways are formed on the side surfaces of two sides along the X direction of the extending portion 92. These many opposing parts 93 are extended in the comb-tooth shape toward the Y direction orthogonal to the side surface along the X direction of the extension part 92.

そして、延出部92の側方、つまり延出部92を挟んで駆動電極33a及び検出電極33bの反対側には、延出部92の長手方向に沿って補正電極94a,94bが配置されている。この補正電極94a,94bの長手方向(X方向)に沿う側面には、Y方向に延出する多数の櫛歯電極95が形成されている。この櫛歯電極95は、各補正電極94a,94bから櫛歯状に延出しており、櫛歯電極95と上述した対向部93とが、1つ1つ所定のギャップを空けて互い違いに配置されている。   Correction electrodes 94a and 94b are disposed along the longitudinal direction of the extension portion 92 on the side of the extension portion 92, that is, on the opposite side of the drive electrode 33a and the detection electrode 33b with the extension portion 92 interposed therebetween. Yes. A large number of comb electrodes 95 extending in the Y direction are formed on the side surfaces of the correction electrodes 94a and 94b along the longitudinal direction (X direction). The comb-tooth electrodes 95 extend in a comb-teeth shape from the correction electrodes 94a and 94b, and the comb-tooth electrodes 95 and the above-described facing portions 93 are alternately arranged with a predetermined gap therebetween. ing.

さらに、対向部93と櫛歯電極95との間のギャップは、振動片82の一方の基端部85a側に向かう側面との間のギャップが、他方の側面との間のギャップに比べ、狭く設定されている。つまり、櫛歯電極95に電圧が印加されると、振動片82には基端部85a側への圧縮応力が作用することとなる。   Further, the gap between the facing portion 93 and the comb-tooth electrode 95 is narrower than the gap between the side surface facing the one base end portion 85a side of the vibrating piece 82 and the gap between the other side surface. Is set. That is, when a voltage is applied to the comb electrode 95, a compressive stress toward the base end portion 85 a acts on the vibrating piece 82.

このように構成された本実施形態の発振子90によれば、振動子アイランド81a,81bに振動片82が両持ちで支持されているため、安定した振動特性を得ることができるとともに、櫛歯状の応力発生部91により、対向部93と補正電極94a,94bとの対向面積を増加させることができる。これにより、補正電極94a,94bに印加する電圧を抑制することができる。したがって、補正電極94a,94bに印加する補正電圧を低くしたとしても、必要な圧縮応力を作用させることができるので、より省電力化を図った上で、高性能な発振子90を提供することができる。   According to the resonator 90 of the present embodiment configured as described above, since the resonator element 81a, 81b supports the resonator element 82 in both ends, stable vibration characteristics can be obtained and comb teeth are provided. The opposing area of the opposing part 93 and the correction electrodes 94a and 94b can be increased by the stress generating part 91 having a shape. Thereby, the voltage applied to the correction electrodes 94a and 94b can be suppressed. Therefore, even if the correction voltage applied to the correction electrodes 94a and 94b is lowered, the necessary compressive stress can be applied, so that a high-performance oscillator 90 can be provided while further saving power. Can do.

(第8実施形態)
次に、図15に基づいて本発明の第8実施形態として、発振子の他の構成について説明する。図15は、第8実施形態に係る発振子の平面図である。なお、本実施形態では、第7実施形態と同様の構成については同一符号を付し説明は省略する。
(Eighth embodiment)
Next, another configuration of the oscillator will be described as an eighth embodiment of the present invention with reference to FIG. FIG. 15 is a plan view of the resonator according to the eighth embodiment. In the present embodiment, the same components as those in the seventh embodiment are denoted by the same reference numerals, and description thereof is omitted.

図15に示すように、本実施形態の発振子110は、振動片82の両基端部85a,85b側に、櫛歯状の応力発生部99が設けられていた振動子96を備えている。
より詳述に説明すると、振動片82の基端部85a,85bの同一ポイントから各振動子アイランド81a,81bを囲むように、それぞれ同じ長さだけ延出する平面視コ字状の延出部97が形成されている。 More specifically, a plan-view U-shaped extending portion extending from the same point of the base end portions 85a and 85b of the vibrating piece 82 so as to surround the vibrator islands 81a and 81b by the same length. 97 is formed. 各延出部97のX方向に沿う側面には、側方に向けて延出する多数の対向部93が形成されている。 On the side surface of each extending portion 97 along the X direction, a large number of facing portions 93 extending toward the side are formed. この対向部93は、延出部97の側面から延出部97と直交するY方向に櫛歯状に形成されている。 The facing portion 93 is formed in a comb-teeth shape in the Y direction orthogonal to the extending portion 97 from the side surface of the extending portion 97. As shown in FIG. 15, the oscillator 110 according to the present embodiment includes a vibrator 96 in which comb-like stress generating portions 99 are provided on both base end portions 85 a and 85 b of the resonator element 82. . As shown in FIG. 15, the oscillator 110 according to the present embodiment includes a vibrator 96 in which comb-like stress generating portions 99 are provided on both base end portions 85 a and 85 b of the resonator element 82.
More specifically, a U-shaped extending portion in plan view that extends by the same length so as to surround each transducer island 81a, 81b from the same point of the base end portions 85a, 85b of the vibrating piece 82. 97 is formed. On the side surface along the X direction of each extending portion 97, a large number of facing portions 93 extending toward the side are formed. The facing portion 93 is formed in a comb shape in the Y direction orthogonal to the extending portion 97 from the side surface of the extending portion 97. More specifically, a U-shaped extending portion in plan view that extends by the same length so as to surround each transducer island 81a, 81b from the same point of the base end portions 85a, 85b of the vibrating piece 82. 97 is formed. On the side surface along the X direction of each extending portion 97, a large number of facing portions 93 extending toward the side are formed. The facing portion 93 is formed in a comb shape in the Y direction transducer to the extending portion 97 from the side surface of the extending portion 97.

そして、各延出部97の側方には、延出部97の長手方向に沿って補正電極98が配置されている。この補正電極98の長手方向に沿う側面には、各対向部93と互いに噛み合うように延出する櫛歯電極95が形成されている。以上により一対の応力発生部99が構成されている。
さらに、各対向部93と櫛歯電極95との間のギャップは、振動片82側に向かう側面のギャップが、他方の側面のギャップに比べ狭く形成されている。 Further, the gap between each of the facing portions 93 and the comb tooth electrode 95 is formed so that the gap on the side surface facing the vibrating piece 82 side is narrower than the gap on the other side surface. つまり、櫛歯電極95に電圧が印加されると、振動片82には両応力発生部99に挟まれるように圧縮応力が作用することとなる。 That is, when a voltage is applied to the comb tooth electrode 95, a compressive stress acts on the vibrating piece 82 so as to be sandwiched between the stress generating portions 99. And the correction electrode 98 is arrange | positioned along the longitudinal direction of the extension part 97 to the side of each extension part 97. As shown in FIG. On the side surface along the longitudinal direction of the correction electrode 98, a comb electrode 95 extending so as to mesh with each facing portion 93 is formed. The pair of stress generating portions 99 is configured as described above. And the correction electrode 98 is arrange | positioned along the longitudinal direction of the extension part 97 to the side of each extension part 97. As shown in FIG. On the side surface along the longitudinal direction of the correction electrode 98, a comb electrode 95 extending so as to mesh with each facing portion 93 is formed. The pair of stress generating portions 99 is configured as described above.
Further, the gap between each facing portion 93 and the comb electrode 95 is formed such that the gap on the side face toward the vibrating piece 82 is narrower than the gap on the other side face. That is, when a voltage is applied to the comb electrode 95, a compressive stress acts on the vibrating piece 82 so as to be sandwiched between the two stress generating portions 99. Further, the gap between each facing portion 93 and the comb electrode 95 is formed such that the gap on the side face toward the vibrating piece 82 is narrower than the gap on the other side face. That is, when a voltage is applied to the comb electrode 95, a compressive stress acts on the vibrating piece 82 so as to be sandwiched between the two stress generating portions 99.

このように構成された本実施形態の発振子110によれば、上述した第7実施形態と同様の効果を奏することに加え、振動片82の両基端部85a,85bから振動片82を挟むように一対の応力発生部99を形成したため、振動片82により効率的に圧縮応力を作用させることができる。   According to the resonator 110 of the present embodiment configured as described above, in addition to the same effects as those of the seventh embodiment described above, the resonator element 82 is sandwiched from both base end portions 85a and 85b of the resonator element 82. Since the pair of stress generating portions 99 are formed as described above, compressive stress can be efficiently applied by the vibrating piece 82.

また、上述した発振子を備えた発振器の構成として以下のような態様も可能である。
(第9実施形態)
図16は、第9実施形態における発振器の構成を示すブロック図である。なお、発振子は上述した第1〜8実施形態の発振子のうち何れを用いることも可能だが、以下の説明においては第1実施形態の発振子を用いて説明する。
Moreover, the following aspects are also possible as a configuration of an oscillator including the above-described oscillator.
(Ninth embodiment)
FIG. 16 is a block diagram illustrating a configuration of an oscillator according to the ninth embodiment. Note that any of the oscillators of the first to eighth embodiments described above can be used as the oscillator, but in the following description, the oscillator of the first embodiment will be used.

上述した発振器10(図5参照)では、共振周波数の変動に基づいて振動片の共振周波数の補正に必要な圧縮応力値を決定したが、この圧縮応力値を発振子(振動子)の温度変化に応じて決定することも可能である。
図16に示すように、発振器200は、上述した発振子30と駆動IC210とを備えている。 As shown in FIG. 16, the oscillator 200 includes the oscillator 30 and the drive IC 210 described above. 駆動IC210は駆動回路14、電圧印加回路16と、発振子30の温度を測定する温度センサ211と、補正データが記憶された補正データメモリ(メモリ部)212と、補正データを参照して圧縮応力を算出する算出部213とを備えている。 The drive IC 210 refers to the drive circuit 14, the voltage application circuit 16, the temperature sensor 211 for measuring the temperature of the oscillator 30, the correction data memory (memory unit) 212 in which the correction data is stored, and the compressive stress with reference to the correction data. It is provided with a calculation unit 213 for calculating. なお、温度センサ211、補正データメモリ212及び算出部213により、本実施形態の算出機構が構成されている。 The temperature sensor 211, the correction data memory 212, and the calculation unit 213 constitute the calculation mechanism of the present embodiment. In the above-described oscillator 10 (see FIG. 5), the compressive stress value necessary for correcting the resonant frequency of the resonator element is determined based on the fluctuation of the resonant frequency, and this compressive stress value is used as the temperature change of the oscillator (vibrator). It is also possible to decide according to In the above-described oscillator 10 (see FIG. 5), the compressive stress value necessary for correcting the clamping frequency of the resonator element is determined based on the fluctuation of the electrifying frequency, and this compressive stress value is used as the temperature change of the oscillator (vibrator). It is also possible to decide according to
As shown in FIG. 16, the oscillator 200 includes the oscillator 30 and the drive IC 210 described above. The drive IC 210 includes a drive circuit 14, a voltage application circuit 16, a temperature sensor 211 that measures the temperature of the oscillator 30, a correction data memory (memory unit) 212 that stores correction data, and compressive stress with reference to the correction data. And a calculating unit 213 for calculating. Note that the temperature sensor 211, the correction data memory 212, and the calculation unit 213 constitute the calculation mechanism of the present embodiment. As shown in FIG. 16, the oscillator 200 includes the oscillator 30 and the drive IC 210 described above. The drive IC 210 includes a drive circuit 14, a voltage application circuit 16, a temperature sensor 211 that measures the temperature of the oscillator 30 And a calculating unit 213 for calculating. Note that the temperature sensor 211, the correction data memory 212, and the calculation unit. And a correcting data memory (memory unit) 212 that stores correction data, and compressive stress with reference to the correction data. 213 constitutes the calculation mechanism of the present embodiment.

温度センサ211は、発振子30の温度を測定して、測定した温度を検出信号として算出部213に出力している。
補正データメモリ212が有する上記補正データには、温度センサ211で検出された温度と予め設定された基準温度との温度差に基づいて、圧縮応力値を算出するテーブルが記憶されている。 In the correction data included in the correction data memory 212, a table for calculating the compressive stress value based on the temperature difference between the temperature detected by the temperature sensor 211 and the preset reference temperature is stored. つまり、上述した式3に対応するテーブルが、予め記憶されているものである。 That is, the table corresponding to the above-mentioned equation 3 is stored in advance.
算出部213は、温度センサ211から出力された検出信号と、補正データが記憶された補正データメモリ212とを参照して、圧縮応力値を算出し、該圧縮応力値に対応した電圧印加信号を電圧印加回路16に出力するものである。 The calculation unit 213 calculates the compressive stress value with reference to the detection signal output from the temperature sensor 211 and the correction data memory 212 in which the correction data is stored, and outputs a voltage application signal corresponding to the compressive stress value. It is output to the voltage application circuit 16. The temperature sensor 211 measures the temperature of the oscillator 30 and outputs the measured temperature to the calculator 213 as a detection signal. The temperature sensor 211 measures the temperature of the oscillator 30 and outputs the measured temperature to the calculator 213 as a detection signal.
The correction data stored in the correction data memory 212 stores a table for calculating a compressive stress value based on the temperature difference between the temperature detected by the temperature sensor 211 and a preset reference temperature. That is, the table corresponding to the above-described Expression 3 is stored in advance. The correction data stored in the correction data memory 212 stores a table for calculating a compressive stress value based on the temperature difference between the temperature detected by the temperature sensor 211 and a preset reference temperature. That is, the table corresponding to the above-described Expression 3 is stored in advance.
The calculation unit 213 refers to the detection signal output from the temperature sensor 211 and the correction data memory 212 in which correction data is stored, calculates a compressive stress value, and outputs a voltage application signal corresponding to the compressive stress value. The voltage is output to the voltage application circuit 16. The calculation unit 213 refers to the detection signal output from the temperature sensor 211 and the correction data memory 212 in which correction data is stored, calculates a compressive stress value, and outputs a voltage application signal corresponding to the compressive stress value. The voltage is output to the voltage application circuit 16.

このように構成された発振器200においては、まず温度センサ211により発振子30の温度が常時測定されており、測定された温度が検出信号として算出部213に出力される。算出部213は、温度センサ211から出力された検出信号と補正データメモリ212に記憶された式3に対応するテーブルに基づいて、補正に必要な圧縮応力値を算出する。そして、算出部213は、この圧縮応力値に対応した印加信号を電圧印加回路16に向けて出力する。これを受けて電圧印加回路16は、補正電極38a,38bに補正電圧を印加する。これにより、補正電極38a,38bと対向部40との間に静電引力が発生し、振動片36に算出した圧縮応力値の圧縮応力が作用する。したがって、温度上昇でヤング率の変化により生じる振動片36の共振周波数の変動を補正することができる。   In the oscillator 200 configured as described above, first, the temperature of the oscillator 30 is always measured by the temperature sensor 211, and the measured temperature is output to the calculation unit 213 as a detection signal. The calculation unit 213 calculates a compression stress value necessary for correction based on the detection signal output from the temperature sensor 211 and a table corresponding to Equation 3 stored in the correction data memory 212. Then, the calculation unit 213 outputs an application signal corresponding to the compressive stress value toward the voltage application circuit 16. In response to this, the voltage application circuit 16 applies a correction voltage to the correction electrodes 38a and 38b. As a result, an electrostatic attractive force is generated between the correction electrodes 38 a and 38 b and the facing portion 40, and the compressive stress of the calculated compressive stress value acts on the vibrating piece 36. Therefore, fluctuations in the resonance frequency of the resonator element 36 caused by changes in Young's modulus due to temperature rise can be corrected.

このように、温度センサ211及び補正データメモリ212を利用することで、基準温度と実際の温度差による共振周波数の変動を圧縮応力で相殺するために必要な圧縮応力値を速やかに算出することができる。したがって、より正確かつ効率良く温度特性の補正を行うことができる。   As described above, by using the temperature sensor 211 and the correction data memory 212, it is possible to quickly calculate the compressive stress value necessary for canceling the fluctuation of the resonance frequency due to the difference between the reference temperature and the actual temperature with the compressive stress. it can. Therefore, the temperature characteristic can be corrected more accurately and efficiently.

(第10実施形態)
図17は、第10実施形態における発振器の構成を示すブロック図である。
図17に示すように、発振器300は発振子30と駆動IC310とを備えている。駆動IC310は、上述した駆動回路14、電圧印加回路16とレファレンス発振子(算出機構)320と周波数差分検出回路(算出機構)330とを備えている。
(10th Embodiment)
FIG. 17 is a block diagram illustrating a configuration of an oscillator according to the tenth embodiment.
As shown in FIG. 17, the oscillator 300 includes an oscillator 30 and a drive IC 310. The drive IC 310 includes the drive circuit 14, the voltage application circuit 16, the reference oscillator (calculation mechanism) 320, and the frequency difference detection circuit (calculation mechanism) 330 described above.

レファレンス発振子320は、発振子30と同一に構成された発振子である。レファレンス発振子320には、駆動回路14から発振子30に印加される電圧と常時同値の電圧が印加されるように構成されている。
周波数差分検出回路330には、基準温度時の共振周波数が予め記憶されるとともに、発振子30とレファレンス発振子320との共振周波数の差分を検出して、この差分に基づいて電圧印加回路16に印加信号を出力するものである。
The reference oscillator 320 is an oscillator configured in the same manner as the oscillator 30. The reference oscillator 320 is configured such that a voltage always equal to the voltage applied from the drive circuit 14 to the oscillator 30 is applied.
The frequency difference detection circuit 330 stores in advance the resonance frequency at the reference temperature, detects a difference in resonance frequency between the oscillator 30 and the reference oscillator 320, and supplies the voltage application circuit 16 with the difference based on this difference. An application signal is output. The frequency difference detection circuit 330 stores in advance the resonance frequency at the reference temperature, detects a difference in resonance frequency between the oscillator 30 and the reference oscillator 320, and supplies the voltage application circuit 16 with the difference based on this difference. An application signal is output.

このように構成された発振器300においては、まず駆動回路14から各発振子30,320に向けて同じ値の電圧を印加する。そして、各発振子30,320の共振周波数の検出信号が周波数差分検出回路330に出力される。検出信号を受信した周波数差分検出回路330は、基準温度時の各発振子30,320の共振周波数を記録する。なお、基準温度時の共振周波数は各発振子30,320ともに同値であるため、何れか一方の共振周波数のみを記録してもよい。   In the oscillator 300 configured as described above, first, a voltage having the same value is applied from the drive circuit 14 to each of the oscillators 30 and 320. Then, a detection signal of the resonance frequency of each oscillator 30, 320 is output to the frequency difference detection circuit 330. The frequency difference detection circuit 330 that has received the detection signal records the resonance frequency of each of the oscillators 30 and 320 at the reference temperature. Note that since the resonance frequency at the reference temperature is the same for each of the resonators 30 and 320, only one of the resonance frequencies may be recorded.

そして、一定時間後に再び各発振子30,320から共振周波数の検出信号が出力される。この時、はじめに検出した基準温度時の共振周波数とレファレンス発振子320の共振周波数との差分を算出する。そして、この差分から発振子30,320の測定温度が算出される。この温度に基づいて、基準温度との温度差を算出し、共振周波数の変動を圧縮応力で相殺するために必要な圧縮応力値を算出する。そして、必要な圧縮応力値に対応した圧縮応力を発振子30に作用させる。これにより、発振子30の共振周波数が補正される。   Then, after a predetermined time, a resonance frequency detection signal is output from each of the oscillators 30 and 320 again. At this time, the difference between the resonance frequency at the reference temperature detected first and the resonance frequency of the reference oscillator 320 is calculated. Then, the measured temperature of the oscillators 30 and 320 is calculated from this difference. Based on this temperature, a temperature difference from the reference temperature is calculated, and a compressive stress value necessary for canceling the fluctuation of the resonance frequency with the compressive stress is calculated. Then, a compressive stress corresponding to a necessary compressive stress value is applied to the oscillator 30. Thereby, the resonance frequency of the oscillator 30 is corrected.

このように、発振器300によれば、発振子30の共振周波数の変動をレファレンス発振子320の実測値と比較することで、補正に必要な圧縮応力を決定することができる。したがって、微細な温度変動にも対応することができるため、より高精細な発振器300を提供することができる。   As described above, according to the oscillator 300, the compression stress necessary for correction can be determined by comparing the fluctuation of the resonance frequency of the oscillator 30 with the actually measured value of the reference oscillator 320. Therefore, since it is possible to cope with minute temperature fluctuations, it is possible to provide a higher-definition oscillator 300.

なお、本発明の技術範囲は、上述した実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において、上述した実施形態に種々の変更を加えたものを含む。 It should be noted that the technical scope of the present invention is not limited to the above-described embodiments, and includes those in which various modifications are made to the above-described embodiments without departing from the spirit of the present invention.

例えば、補正電極と対向部の形状は対向面積が大きく確保できる形状であれば、適宜設計変更が可能である。
また、本実施形態の発振器の構成に加えて、PLL回路を採用してもよい。 Further, in addition to the configuration of the oscillator of the present embodiment, a PLL circuit may be adopted. この場合、周波数変動検出回路により温度特性の補正をした後、PLL回路によって温度補正を行うこととなる。 In this case, the temperature characteristic is corrected by the frequency fluctuation detection circuit, and then the temperature is corrected by the PLL circuit. これにより、ノイズの発生を抑えた上で、より高精度な補正が可能になる。 As a result, it is possible to perform more accurate correction while suppressing the generation of noise. For example, if the shape of the correction electrode and the facing portion is a shape that can ensure a large facing area, the design can be changed as appropriate. For example, if the shape of the correction electrode and the facing portion is a shape that can ensure a large facing area, the design can be changed as appropriate.
In addition to the configuration of the oscillator according to the present embodiment, a PLL circuit may be employed. In this case, after the temperature characteristic is corrected by the frequency fluctuation detection circuit, the temperature correction is performed by the PLL circuit. This makes it possible to perform more accurate correction while suppressing the generation of noise. In addition to the configuration of the oscillator according to the present embodiment, a PLL circuit may be employed. In this case, after the temperature characteristic is corrected by the frequency fluctuation detection circuit, the temperature correction is performed by the PLL circuit. This makes it possible to perform more accurate correction while suppressing the generation of noise.

本発明の第1実施形態における発振子の平面図である。 1 is a plan view of an oscillator according to a first embodiment of the present invention. (a)は図1のA−A'線に沿う断面図であり、(b)は図1のB−B'線に沿う断面図である。 (A) is sectional drawing which follows the AA 'line of FIG. 1, (b) is sectional drawing which follows the BB' line of FIG. 図2に相当する部分における断面図であり、発振子の製造方法を示す工程図である。 FIG. 4 is a cross-sectional view of a portion corresponding to FIG. 図2に相当する部分における断面図であり、発振子の製造方法を示す工程図である。 FIG. 4 is a cross-sectional view of a portion corresponding to FIG. 2 and a process diagram illustrating a method for manufacturing an oscillator. 本発明の実施形態における発振器の構成を示すブロック図である。 It is a block diagram which shows the structure of the oscillator in embodiment of this invention. 本発明の第2実施形態における発振子の平面図である。 It is a top view of an oscillator in a 2nd embodiment of the present invention. 本発明の第3実施形態における発振子の平面図である。 It is a top view of an oscillator in a 3rd embodiment of the present invention. 図7のC部拡大図である。 It is the C section enlarged view of FIG. 本発明の第4実施形態における発振子の平面図である。 It is a top view of an oscillator in a 4th embodiment of the present invention. 図9のD部拡大図である。 It is the D section enlarged view of FIG. 図9のF部拡大図である。 It is the F section enlarged view of FIG. 本発明の第5実施形態における発振子の平面図である。 It is a top view of an oscillator in a 5th embodiment of the present invention. 本発明の第6実施形態における発振子の平面図である。 It is a top view of an oscillator in a 6th embodiment of the present invention. 本発明の第7実施形態における発振子の平面図である。 It is a top view of an oscillator in a 7th embodiment of the present invention. 本発明の第8実施形態における発振子の平面図である。 It is a top view of an oscillator in an 8th embodiment of the present invention. 本発明の第9実施形態における発振器のブロック図である。 It is a block diagram of the oscillator in 9th Embodiment of this invention. 本発明の第10実施形態における発振器のブロック図である。 It is a block diagram of the oscillator in 10th Embodiment of this invention. 従来の発振器の構成を示すブロック図である。 It is a block diagram which shows the structure of the conventional oscillator.

符号の説明Explanation of symbols

10,200,300発振器 14駆動回路 20,210,310駆動IC 16電圧印加回路 15周波数変動検出回路(算出機構) 30,50,60,70,79,83,90.110発振子 32,46,48,49,67,73,80,96振動子 33a,323a駆動電極(電極部) 33b,323b検出電極(電極部) 34,81a,81b振動子アイランド(ベース部) 36,82振動片 37,61,87,92,97延出部 38a,38b,42a,42b,63,88a,88b,84a,84b,94a,94b,98補正電極 211温度センサ(算出機構) 212補正データメモリ(算出機構) 213算出部(算出機構) 320レファレンス発振子(算出機構) 330周波数差分検出回路(算出機構) 10, 200, 300 oscillator 14 drive circuit 20, 210, 310 drive IC 16 voltage application circuit 15 frequency fluctuation detection circuit (calculation mechanism) 30, 50, 60, 70, 79, 83, 90.110 oscillator 32, 46, 48, 49, 67, 73, 80, 96 vibrators 33a, 323a drive electrodes (electrode parts) 33b, 323b detection electrodes (electrode parts) 34, 81a, 81b vibrator islands (base parts) 36, 82 vibrator elements 37, 61, 87, 92, 97 Extension part 38a, 38b, 42a, 42b, 63, 88a, 88b, 84a, 84b, 94a, 94b, 98 Correction electrode 211 Temperature sensor (calculation mechanism) 212 Correction data memory (calculation mechanism) 213 Calculation unit (calculation mechanism) 320 Reference oscillator (calculation mechanism) 330 Frequency difference detection circuit (calculation mechanism)

Claims (9)

  1. 一方向に延びるように形成され、該一方向に直交する他方向に振動する振動片と、該振動片から左右に分岐して延出する一対の延出部と、該振動片の一端または両端を支持するベース部とを有する振動子と、
    前記振動片に対して所定距離を空けた状態で前記振動片を間に挟むように配置され、駆動電圧が印加された時に静電引力を発生させて前記振動片を振動させる電極部と、
    前記一対の延出部に対して所定距離を空けた状態でそれぞれ対向配置され、補正電圧が印加されたときに静電引力を発生させて各延出部を引き寄せ、前記振動片に対して前記一方向の圧縮応力を作用させる補正電極と、を備えたことを特徴とする発振子。 They are arranged so as to face each other with a predetermined distance from the pair of extension portions, and when a correction voltage is applied, electrostatic attraction is generated to attract each extension portion, and the vibration piece is said to have the same degree of attraction. An oscillator characterized by being provided with a correction electrode that applies compressive stress in one direction. A vibrating piece that is formed to extend in one direction and vibrates in another direction orthogonal to the one direction, a pair of extending portions that extend from the vibrating piece to the left and right, and one or both ends of the vibrating piece A vibrator having a base portion that supports A vibrating piece that is formed to extend in one direction and vibrates in another direction orthogonal to the one direction, a pair of extending portions that extend from the vibrating piece to the left and right, and one or both ends of the vibrating piece A vibrator having a base portion that supports
    An electrode portion that is arranged so as to sandwich the vibrating piece with a predetermined distance from the vibrating piece, and generates an electrostatic attraction when a driving voltage is applied, and vibrates the vibrating piece; An electrode portion that is arranged so as to sandwich the vibrating piece with a predetermined distance from the vibrating piece, and generates an electrostatic attraction when a driving voltage is applied, and vibrates the vibrating piece;
    The pair of extending portions are arranged to face each other with a predetermined distance therebetween, and when a correction voltage is applied, electrostatic attraction is generated to draw each extending portion, and the vibrating piece is An oscillator comprising: a correction electrode that applies compressive stress in one direction. The pair of extending portions are arranged to face each other with a predetermined distance similarly, and when a correction voltage is applied, electrostatic attraction is generated to draw each extending portion, and the vibrating piece is An oscillator comprising: a correction electrode that applies compressive stress in one direction.
  2. 前記振動片は、前記ベース部に一端が片持ち状に支持されていることを特徴とする請求項1記載の発振子。 The oscillator according to claim 1, wherein one end of the vibrating piece is supported by the base portion in a cantilever manner.
  3. 前記振動片は、前記ベース部に両端が両持ち状に支持されていることを特徴とする請求項1記載の発振子。 The oscillator according to claim 1, wherein both ends of the resonator element are supported by the base portion in a doubly supported manner.
  4. 前記一対の延出部は、前記他方向に向けて延出していることを特徴とする請求項1から請求項3のいずれか1項に記載の発振子。 4. The oscillator according to claim 1, wherein the pair of extending portions extend in the other direction. 5.
  5. 前記一対の延出部は、前記振動片の両端側にそれぞれ設けられていることを特徴とする請求項1から請求項4のいずれか1項に記載の発振子。   5. The oscillator according to claim 1, wherein the pair of extending portions are provided on both end sides of the vibrating piece, respectively.
  6. 前記補正電極及び前記延出部は、それぞれ一部分が櫛歯状に形成され、これら櫛歯状に形成された補正電極と延出部とが互い違いに配されていることを特徴とする請求項1から請求項5のいずれか1項に記載の発振子。 2. The correction electrode and the extension part are each formed in a comb-like shape, and the correction electrode and the extension part formed in a comb-teeth shape are alternately arranged. The oscillator according to claim 5.
  7. 請求項1から請求項6のいずれか1項に記載の発振子と、駆動ICとを有し、
    該駆動ICは、前記電極部に前記駆動電圧を印加する駆動回路と、
    前記振動片に作用させる前記圧縮応力の圧縮応力値を算出する算出機構と、

    算出された前記圧縮応力値に応じた前記補正電圧を前記補正電極に印加する電圧印加回路と、を備えていることを特徴とする発振器。 An oscillator including a voltage application circuit that applies the correction voltage corresponding to the calculated compressive stress value to the correction electrode. The oscillator according to any one of claims 1 to 6, and a driving IC, The oscillator according to any one of claims 1 to 6, and a driving IC,
    The drive IC includes a drive circuit that applies the drive voltage to the electrode unit; The drive IC includes a drive circuit that applies the drive voltage to the electrode unit;
    A calculation mechanism for calculating a compressive stress value of the compressive stress to be applied to the vibrating piece; A calculation mechanism for calculating a compressive stress value of the compressive stress to be applied to the vibrating piece;
    An oscillator comprising: a voltage application circuit that applies the correction voltage corresponding to the calculated compressive stress value to the correction electrode. An oscillator comprising: a voltage application circuit that applies the correction voltage corresponding to the calculated compressive stress value to the correction electrode.
  8. 前記算出機構は、前記発振子の温度を検出する温度センサと、
    前記温度センサで検出された温度と予め設定された基準温度との温度差に基づいて、前記圧縮応力値を算出する補正データが記憶されたメモリ部と、を備えていることを特徴とする請求項7記載の発振器。 A claim characterized by comprising a memory unit in which correction data for calculating the compressive stress value is stored based on a temperature difference between a temperature detected by the temperature sensor and a preset reference temperature. Item 7. The oscillator according to item 7. The calculation mechanism includes a temperature sensor that detects a temperature of the oscillator; The calculation mechanism includes a temperature sensor that detects a temperature of the oscillator;
    And a memory unit that stores correction data for calculating the compressive stress value based on a temperature difference between a temperature detected by the temperature sensor and a preset reference temperature. Item 8. The oscillator according to Item 7. And a memory unit that stores correction data for calculating the compressive stress value based on a temperature difference between a temperature detected by the temperature sensor and a preset reference temperature. Item 8. The oscillator according to Item 7.
  9. 前記算出機構は、前記駆動回路から前記発振子と常時同値の駆動電圧が印加されるレファレンス発振子と、
    このレファレンス発振子と前記発振子との周波数の差分を検出するとともに、検出した差分に基づいて前記圧縮応力値を算出する周波数差分検出回路と、を備えていることを特徴とする請求項7記載の発振器。 The seventh aspect of claim 7, wherein the frequency difference detection circuit for detecting the frequency difference between the reference oscillator and the oscillator and calculating the compressive stress value based on the detected difference is provided. Oscillator. The calculation mechanism includes a reference oscillator to which a drive voltage having the same value as that of the oscillator is applied from the drive circuit, and The calculation mechanism includes a reference oscillator to which a drive voltage having the same value as that of the oscillator is applied from the drive circuit, and
    8. A frequency difference detection circuit that detects a difference in frequency between the reference oscillator and the oscillator and calculates the compressive stress value based on the detected difference. Oscillator. 8. A frequency difference detection circuit that detects a difference in frequency between the reference oscillator and the oscillator and calculates the compressive stress value based on the detected difference. Oscillator.
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