JP2009099891A - Semiconductor laser device and method of manufacturing the same, and semiconductor laser array device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of individually emitting laser beams, to provide a method of manufacturing the same, and to provide a semiconductor laser array device using a plurality of same semiconductor laser devices. <P>SOLUTION: The semiconductor laser device LD includes a substrate 1, a plurality of semiconductor laser diode elements ld formed over the substrate 1 and stacked one over another, and insulating layers 4 formed between the plurality of semiconductor laser elements ld. With this configuration, the insulating layers 4 are formed between the plurality of semiconductor laser elements ld, so the plurality of respective semiconductor laser elements ld can individually emit laser beams. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor laser device including a plurality of semiconductor laser diode elements on a substrate, a method for manufacturing the semiconductor laser device for manufacturing the semiconductor laser device, and a semiconductor laser array device including a plurality of the semiconductor laser devices.

  Since the semiconductor laser device has various advantages such as small size, low power consumption, and high output, for example, various semiconductor laser devices such as solid-state laser excitation, material processing, optical communication, optical data recording, printing, measurement, and medical treatment can be used. It is used as a light source in the field. One of the semiconductor laser devices emits a plurality of laser beams. Such a semiconductor laser device is disclosed in, for example, Patent Document 1 and Patent Document 2.

  FIG. 5 is a perspective view showing the structure of the semiconductor laser device disclosed in Patent Document 1. As shown in FIG. FIG. 6 is a cross-sectional view showing the structure of the semiconductor laser device disclosed in Patent Document 2.

  As shown in FIG. 5, the semiconductor laser device 100 disclosed in Patent Document 1 includes a substrate 103, a first waveguide 104, a first active layer sequence 105, a second waveguide 106, and a tunnel junction 107. A third waveguide layer 108, a second active layer sequence 109, a fourth waveguide layer 110, and a contact layer 111, which are fixed to a part on the cooling element 102 by a fixing layer 112. A cylindrical lens 114 on the rod that focuses each beam in a common plane is fixed to the other part on the cooling element 102. The first and second waveguide layers 104, 106 and the third and fourth waveguide layers 108, 110 each form a LOC waveguide structure for guiding the beam region to be generated (optical confinement) Active layer rows 105 and 109 provided in an intervening manner are buried therein. A tunnel junction 107 is formed between the two waveguide structures, and the active layer sequences 105 and 109 arranged in the vertical direction are connected in series by the tunnel junction 107.

Further, as shown in FIG. 6, the semiconductor laser device 200 disclosed in Patent Document 2 includes an n-type GaAs substrate 201 and an n-type Al _0.45 Ga _{0. 55} As first cladding layer 202, Al _0.25 Ga _0.75 As guide layer 203 formed on the first cladding layer 202, AlGaAs / AlGaAs MQW first formed on the guide layer 203 The active layer 204, the Al _0.25 Ga _0.75 As guide layer 205 formed on the MQW first active layer 204, and the p-type Al _0.45 Ga _0.55 As formed on the guide layer 205. a second cladding layer 206, an n-type _Al 0.55 _{Ga 0.45} as current blocking layer 210 formed on the second cladding layer 206, formed on the current blocking layer 210 A fourth cladding layer 211 of type _Al 0.45 _{Ga 0.55} As, fourth and p-type GaAs contact layer 212 formed on the cladding layer 211, n-type formed on a part of the contact layer 212 GaAs contact layer 213, n-type In _0.5 (Ga _0.3 Al _0.7 ) _0.5 P fifth cladding layer 214 formed on a part of contact layer 213, and fifth cladding layer In _0.5 (Ga _0.5 Al _0.5 ) _0.5 P guide layer 215 formed on 214, InGaP / InGaAlP MQW second active layer 216 formed on guide layer 215, The In _0.5 (Ga _0.5 Al _0.5 ) _0.5 P guide layer 217 formed on the MQW second active layer 216 and the p-type In _0.5 (formed on the guide layer 217 Ga _0.3 Al _0.7 ) _0.5 P sixth cladding layer 218, p-type In _0.5 Ga _0.5 P etching stop layer 219 formed on part of sixth cladding layer 218, p-type In _{A 0.5} (Ga _0.3 Al _0.7 ) _0.5 P seventh cladding layer 220, a p-type In _0.5 Ga _0.5 P intermediate layer 221 and a p-type GaAs contact layer 222 were stacked. Second ridge stripe 223, SiO ₂ dielectric film 224 formed on both sides of second ridge stripe, p-side electrode 225 provided on second ridge stripe 223, and n-side provided on contact layer 213 An electrode 226; a p-side electrode 227 provided on the contact layer 212; and an n-type electrode 228 provided on the other main surface of the substrate 201. A p-type InGaP element is provided in the current blocking layer 210. Ring stop layer 207 and the p-type _Al 0.45 _{Ga 0.55} As the third cladding layer 208 first ridge stripe 209 formed by laminating a second cladding layer 206 on at a location laterally spaced from the second new ridge 223 It is formed in a part. In the semiconductor laser array 200 having such a configuration, the first laser element 200-1 including the first ridge stripe 209 and emitting the first wavelength includes the n-side electrode 228 and the first multilayer film from the substrate 201 to the contact layer 212. The second laser element 200-2 including the second ridge stripe 223 and emitting the second wavelength includes the n-side electrode 226 and the second multilayer from the contact layer 213 to the contact layer 222. The first laser beam having the first wavelength and the second laser beam having the second wavelength are emitted from the film and the p-side electrode 225, respectively.
Japanese Patent Laying-Open No. 2005-079580 JP 2006-080307 A

  By the way, in the semiconductor laser device 100 disclosed in Patent Document 1, power cannot be individually supplied to each of the active layer sequences 105 and 109, and therefore laser light is emitted individually from each of the active layer sequences 105 and 109. I can't.

  The semiconductor laser device 200 disclosed in Patent Document 2 includes a pair of electrodes 227 and 228 and a pair of electrodes 225 and 226 in each of the MQW first and second active layers 204 and 216. It is difficult to individually emit laser light from the second active layers 204 and 216. When the MQW first and second active layers 204 and 216 are individually driven in this configuration, the voltage is applied with the electrode 227 and the electrode 225 as the positive electrode and the electrode 228 and the electrode 226 as the negative electrode. A current flows between the electrode 227 and the electrode 226 and leaks. On the other hand, in order to avoid this current leakage, if it is attempted to adopt a configuration in which the electrode 227 and the electrode 226 are a common ground and the electrode 228 and the electrode 225 are a positive electrode, the substrate 201 needs to be a p-type substrate. However, a p-type substrate is generally difficult to obtain the same quality and size as an n-type substrate, and this configuration is disadvantageous. In order to avoid this point, when it is attempted to adopt a configuration in which the electrode 227 and the electrode 226 are used as the positive electrode and the electrode 228 and the electrode 225 are used as the negative electrode, when arraying a plurality of semiconductor laser devices, for example, an array When a voltage is applied between the electrode 227 and the electrode 228 in order to emit light from one of the plurality of semiconductor laser devices, the plurality of semiconductor laser devices in which the electrodes 228 are arrayed Since it is a common ground, other semiconductor laser devices eventually emit light. Therefore, in the semiconductor laser device 200 disclosed in Patent Document 2, it is difficult to individually emit laser beams from the MQW first and second active layers 204 and 216.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a semiconductor laser device capable of individually emitting each laser beam, a method for manufacturing the semiconductor laser device, and a plurality of the semiconductor laser devices. It is to provide a semiconductor laser array used.

  As a result of various studies, the present inventor has found that the above object is achieved by the present invention described below. That is, a semiconductor laser device according to an aspect of the present invention is formed between a substrate, a plurality of semiconductor laser diode elements formed above the substrate and stacked on each other, and the elements of the plurality of semiconductor laser diode elements. And an insulating layer.

  According to this configuration, since the electrical insulating layer is formed between the elements of the plurality of semiconductor laser diode elements, each of the plurality of semiconductor laser diode elements is handled independently without interfering with each other when driven. It becomes possible. For this reason, each of the plurality of semiconductor laser diode elements can be individually driven and can individually emit laser light.

  In the semiconductor laser device described above, each of the plurality of semiconductor laser diode elements individually includes a pair of electrodes.

  According to this configuration, it is possible to provide a semiconductor laser device capable of individually supplying power to each of the plurality of semiconductor laser diode elements from a pair of electrodes individually corresponding to each of the plurality of semiconductor laser diode elements. .

  Further, in these semiconductor laser devices described above, each of the plurality of semiconductor laser diode elements is characterized in that light emitting points for emitting the laser light are formed at different height positions from the substrate. For example, in the case of a semiconductor laser device composed of two semiconductor laser diode elements, a first emission point that emits laser light from the first semiconductor laser diode element and a second emission that emits laser light from the second semiconductor laser diode element. The points are formed at different heights from the substrate.

  According to this configuration, the light emitting points for emitting the laser light in each of the plurality of semiconductor laser diode elements are formed at different heights from the substrate, so that a two-dimensional array is easy.

  A semiconductor laser array device according to another aspect of the present invention includes a plurality of any of the above-described semiconductor laser devices, and the substrates of the semiconductor laser devices are common.

  According to this configuration, the semiconductor laser array device includes a plurality of semiconductor laser devices formed on a common substrate, can individually drive each semiconductor laser diode element in each semiconductor laser device, and can individually emit laser light. Can be provided.

  Furthermore, a method of manufacturing a semiconductor laser device according to another aspect of the present invention includes a step of forming a plurality of semiconductor laser diode elements so as to be stacked on each other above a substrate, and a step of forming the plurality of semiconductor laser diode elements. And a step of forming an insulating layer between the elements.

  According to this configuration, it is possible to provide a semiconductor laser device that can emit each laser beam individually.

  The semiconductor laser device and the semiconductor laser array according to the present invention can emit each laser beam individually. Further, in the method for manufacturing a semiconductor laser device according to the present invention, a semiconductor laser device capable of individually emitting each laser beam is provided.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. In addition, the structure which attached | subjected the same code | symbol in each figure shows that it is the same structure, The description is abbreviate | omitted.

  FIG. 1 is a cross-sectional view schematically showing the configuration of the semiconductor laser array in the embodiment. FIG. 2 is a perspective view schematically showing the configuration of the semiconductor laser array in the embodiment. FIG. 3 is a process sectional view for explaining the method for manufacturing the semiconductor laser array in the embodiment.

  1 and 2, the semiconductor laser array LA includes a plurality of semiconductor laser devices LD (LD-1, LD-2,...), And the substrate 1 of each of the semiconductor laser devices LD is shared. .

  Each semiconductor laser device LD includes a substrate 1, a plurality of semiconductor laser diode elements ld formed above the substrate 1 and stacked on each other, and an insulating layer 4 formed between the elements of the plurality of semiconductor laser diode elements ld. Configured.

  FIG. 1 shows the case of a semiconductor laser device LD composed of two semiconductor laser diode elements ld-1 and ld-2. The semiconductor laser device LD is formed above the substrate 1 and the substrate 1. First and second semiconductor laser diode elements ld-1, ld-2, and an insulating layer 4 formed between the first semiconductor laser diode element ld-1 and the second semiconductor laser diode element ld-2, It is configured with.

  More specifically, in the example shown in FIG. 1, each semiconductor laser device LD includes a substrate 1, a first semiconductor laser diode element ld-1 formed on the substrate 1, and a first semiconductor laser diode element ld-. Insulating layer 4 formed on 1 and a second semiconductor laser diode element ld-2 formed on insulating layer 4 are configured. The substrates of these semiconductor laser devices LD are made common to form a semiconductor laser array LA.

  In the present specification, when referring generically, it is indicated by a reference symbol without a suffix, and when referring to an individual configuration, it is indicated by a reference symbol with a suffix.

  In the semiconductor laser array LA and the semiconductor laser device LD having such a configuration, since the electrical insulating layer 4 is formed between the elements of the plurality of semiconductor laser diode elements ld, each of the plurality of semiconductor laser diode elements is electrically Therefore, each of the plurality of semiconductor laser diode elements ld can be handled independently without interfering with each other in driving. For this reason, the plurality of semiconductor laser diode elements ld can be individually driven, and can individually emit laser light. In the example shown in FIG. 1, an electrical insulating layer 4 is provided between the first semiconductor laser diode element ld-1 and the second semiconductor laser diode element ld-2. Since it is formed between the semiconductor laser diode element ld-2, the first semiconductor laser diode element ld-1 and the second semiconductor laser diode element ld-2 are electrically insulated from each other. Each of the two semiconductor laser diode elements ld-1 and ld-2 can be handled independently without interfering with each other when driven, and can individually emit laser light.

  In the semiconductor laser array LA and the semiconductor laser device LD having such a configuration, a process of forming a plurality of semiconductor laser diode elements ld so as to be stacked on each other above the substrate 1, and a plurality of semiconductor laser diode elements It is manufactured by each step of forming the insulating layer 4 between the ld elements.

  The case of the semiconductor laser device LD including the two semiconductor laser diode elements ld-1 and ld-2 shown in FIG. 1 will be described. The semiconductor laser array LA and the semiconductor laser device LD are generally arranged above the substrate 1 in the first direction. A step of forming a semiconductor laser diode element ld-1, a step of forming a second semiconductor laser diode element ld-2 above the substrate 1, and a first semiconductor laser diode element ld-1 and a second semiconductor laser diode element ld. -2 is manufactured by each step of the step of forming the insulating layer 4 between.

  More specifically, the semiconductor laser array LA and the semiconductor laser device LD are manufactured by the following steps using a semiconductor manufacturing process.

  As shown in FIG. 3A, first, an n-type AlGaAs cladding layer 21 is formed on one main surface of an n-type GaAs substrate 1, and an AlGaAs / AlGaAs MQW (multi-quantum well) is formed on the cladding layer 21. A first active layer 22 having a structure), a p-type AlGaAs cladding layer 23 is formed on the first active layer 22, and a p-type GaAs contact layer 24 is formed on the cladding layer 52. The first active layer 22 is a light emitting layer that emits light of a wavelength mainly corresponding to its band gap by recombination of carriers by injection of carriers (electrons and holes). The clad layer 21 and the clad layer 23 are layers for confining light emitted from the first active layer 22. The contact layer 24 is a layer for making ohmic contact with a p-type electrode 6 described later. The laminate of the cladding layer 21, the first active layer 22, the cladding layer 23, and the contact layer 24 constitutes the first semiconductor laser diode layer 2, and the first semiconductor laser diode layer 2 is formed on the substrate 1. ing.

  Next, a p-type AlGaAs stop layer 3 is formed on the first semiconductor laser diode layer 2, that is, on the contact layer 24. The stop layer 3 is a layer for preventing etching when etching described later is performed.

  Next, a p-type AlGaAs p-type semiconductor layer 41 is formed on the stop layer 3, an n-type AlGaAs n-type semiconductor layer 42 is formed on the p-type semiconductor layer 41, and a p-type semiconductor layer 42 is formed on the n-type semiconductor layer 42. An n-type AlGaAs p-type semiconductor layer 43 is formed, and an n-type AlGaAs n-type semiconductor layer 44 is formed on the p-type semiconductor layer 43. The stacked body of the p-type semiconductor layer 41, the n-type semiconductor layer 42, the p-type semiconductor layer 43, and the n-type semiconductor layer 44 constitutes an insulating layer 4 having a pnpn thyristor structure. It is formed on the semiconductor laser diode layer 2.

  Next, an n-type AlGaAs cladding layer 51 is formed on the insulating layer 4, that is, the n-type semiconductor layer 44, and an AlGaAs / AlGaAs MQW second active layer 52 is formed on the cladding layer 51. A p-type AlGaAs cladding layer 53 is formed on the active layer 52, and a p-type GaAs contact layer 54 is formed on the cladding layer 53. Similar to the first active layer 22, the second active layer 52 is a light emitting layer that emits light having a wavelength corresponding to the band gap when carriers are recombined when carriers are injected. The clad layer 51 and the clad layer 53 are layers for confining light emitted from the second active layer 52, similarly to the clad layer 21 and the clad layer 23. The contact layer 54 is a layer for making ohmic contact with a p-type electrode 7 described later, like the contact layer 24. The laminate of the cladding layer 51, the second active layer 52, the cladding layer 53, and the contact layer 54 constitutes the second semiconductor laser diode layer 5, and the second semiconductor laser diode layer 5 is formed on the insulating layer 4. Has been.

  Each of these layers 2 (21 to 24), 3, 4 (41 to 44), and 5 (51 to 54) is formed by a known deposition method such as a metal organic vapor phase epitaxy (MOVPE) method. Sequentially formed. The composition of each of these layers 2 (21-24), 3, 4 (41-44), and 5 (51-54) is appropriately set according to the function of the layer.

  Next, as shown in FIG. 3B, a part 44a of the surface of the n-type semiconductor layer 44 in the insulating layer 4 is exposed by, for example, photolithography and etching, and the first semiconductor laser diode layer 2 is exposed. A part 24a of the surface of the contact layer 24 is exposed.

  For example, a resist is coated on the surface of the second semiconductor laser diode layer 5 by, for example, spin coating, and a part 24a of the surface of the contact layer 24 in the first semiconductor laser diode layer 2 to be exposed by exposure and development and the second The resist corresponding to a part 24a of the surface of the contact layer 24 in the semiconductor laser diode layer 5 is removed. Then, the exposed second semiconductor laser diode layer 5 is removed by etching after the resist is removed. Subsequently, a resist is coated on the exposed surface, and the resist corresponding to a part 24a of the surface of the contact layer 24 in the first semiconductor laser diode layer 2 to be exposed by exposure and development is removed. Then, the exposed portions of the insulating layer 4 and the stop layer 3 are removed by etching, and a portion 24a of the surface of the contact layer 24 in the first semiconductor laser diode layer 2 is exposed. Finally, the resist is removed to form the structure shown in FIG.

  Next, as shown in FIG. 3C, for example, by photolithography and etching, the first semiconductor laser diode layer 2 is formed into a linear shape or a belt shape in a direction that is composed of the contact layer 24 and the cladding layer 23 and is perpendicular to the paper surface. A ridge 6a that extends and a ridge 7a that is formed of a contact layer 54 and a cladding layer 53 and extends linearly or in a direction perpendicular to the paper surface are formed in the second semiconductor laser diode layer 5.

  For example, a resist is coated on the surface, and the resist corresponding to the ridge 6a and the ridge 7a is left and the other resist is removed by exposure and development. Then, a part of the contact layer 24 and the clad layer 23 and a part of the contact layer 54 and the clad layer 53 which are exposed by removing the resist are removed by etching. Subsequently, the resist is removed, and ridges 6a and 7a having the structure shown in FIG. 3C are formed. The clad layer 23 and the clad layer 53 cooperate with the clad layer 21 opposed via the first active layer 22 and the clad layer 51 opposed via the second active layer 52, respectively, thereby fulfilling an optical confinement function. For this reason, as described above, etching is performed so that a part thereof remains.

Next, a part of the surface of the contact layer 24 in the ridge 6a, a part of the surface of the contact layer 54 in the ridge 7a, and a part of the partial surface 44a of the n-type semiconductor layer 44 in the insulating layer 4 are left. The surface of the cladding layer 23 of the first semiconductor laser diode layer 2 and the side surface of the ridge 6a, the side surface of the stop layer 3, the side surface of the insulating layer 4, and the surface of the cladding layer 53 of the second semiconductor laser diode layer 5 and the ridge 7a An insulating film 10 made of, for example, SiO ₂ or SiN is formed on the side surface of the substrate. Next, a part of the surface of the contact layer 24 in the ridge 6a, a part of the surface of the contact layer 54 in the ridge 7a, and the n-type in the insulating layer 4 are exposed without forming the insulating film 10. For example, an electrode 6 such as Au or Al, an electrode 7, and an electrode 9 are formed by a deposition method such as vacuum deposition so as to be in contact with each part of the partial surface 44 a of the semiconductor layer 44. Next, an electrode 8 made of, for example, Au or Al is formed on the other main surface of the substrate 1 by a deposition method such as vacuum vapor deposition to form the semiconductor laser array LA and the semiconductor laser device LD having the structure shown in FIG. The

  In the semiconductor laser array LA and the semiconductor laser device LD configured as described above, the first semiconductor laser diode element ld-1 includes the substrate 1, the first semiconductor laser diode layer 2, and the pair of electrodes 6 and 8, The second semiconductor laser diode element ld-2 includes an n-type semiconductor layer 44 of the insulating layer 4, a second semiconductor laser diode layer 5, and a pair of electrodes 7 and 9. As described above, each of the first and second semiconductor laser diode elements ld-1, ld-2 includes a pair of electrodes 6, 8;

  When laser light is emitted from the first semiconductor laser diode element ld-1, a predetermined voltage is applied with the electrode 6 as a positive electrode and the electrode 8 as a negative electrode in order to supply power to the first semiconductor laser diode element ld-1. Is applied. Thus, the carriers injected from the electrode 6 are transported to the first active layer 22 via the contact layer 24 and the cladding layer 23, and the carriers injected from the electrode 8 are transferred via the substrate 1 and the cladding layer 21. Light is emitted by being transported to the first active layer 22 and recombining in the first active layer 22. This light is confined by the clad layer 21 and the clad layer 23 and is repeatedly reflected on both end faces of the first active layer 22 to cause laser oscillation, and laser light is emitted from the end face of the first active layer 22.

  Further, when laser light is emitted from the second semiconductor laser diode element ld-2, in order to supply power to the second semiconductor laser diode element ld-2, the electrode 7 is a positive electrode and the electrode 9 is a negative electrode. Is applied. Thus, the carriers injected from the electrode 7 are transported to the second active layer 52 via the contact layer 54 and the cladding layer 53, and the carriers injected from the electrode 9 are transferred to the n-type semiconductor layer 44 and the cladding layer 51. Then, the light is transported to the second active layer 52 and recombined in the second active layer 52 to emit light. This light is confined by the clad layer 51 and the clad layer 53 and is repeatedly reflected on both end faces of the second active layer 52 to cause laser oscillation, and laser light is emitted from the end face of the second active layer 52.

  Here, since there is the insulating layer 4 between the first semiconductor laser diode element ld-1 and the second semiconductor laser diode element ld-2, the power supplied to the first semiconductor laser diode element ld-1 is The insulating layer 4 does not substantially leak (substantially leak) to the second semiconductor laser diode element ld-2. On the other hand, the power supplied to the second semiconductor laser diode element ld-2 is supplied to the first semiconductor laser diode element ld-2 by the insulating layer 4. There is almost no leakage to the laser diode element ld-1.

  As described above, in the semiconductor laser array LA and the semiconductor laser device LD according to the present embodiment, each of the first and second semiconductor laser diode elements ld-1 and ld-2 from the individual pair of electrodes 6, 8; It is possible to individually supply power to each of the first and second semiconductor laser diode elements ld-1 and ld-2, and to individually emit laser light.

  As described above, the semiconductor laser array LA and the semiconductor laser device LD in this embodiment are arrayed based on the structure of the conventional edge-emitting laser device as a basic structure (here, only the array of each semiconductor laser device LD is used). And the array of the first and second semiconductor laser diode elements ld-1 and ld-2 in the semiconductor laser device LD is also included.) Therefore, substantially the same performance as the conventional edge-emitting laser device is exhibited. Can do. In addition, since the semiconductor laser array LA and the semiconductor laser device LD in this embodiment are monolithically stacked as described above, the accuracy of the laser beam spacing (emission position), the emission direction, and the like is high. can do.

  Furthermore, in the semiconductor laser array LA and the semiconductor laser device LD in the present embodiment, the first light emitting point (the first active layer 22 portion substantially below the ridge 6) that emits the laser light of the first semiconductor laser diode element ld-1 As shown in FIG. 1, the second light emitting point (the second active layer 52 portion substantially below the ridge 7) that emits the laser light of the second semiconductor laser diode element ld-2 is at different height positions from the substrate 1. Is formed. For this reason, the semiconductor laser array LA and the semiconductor laser device LD in the present embodiment can be easily formed into a two-dimensional array.

  In the above description, the semiconductor laser device LD composed of the two semiconductor laser diode elements ld-1 and ld-2 and the semiconductor laser array LA provided with a plurality of semiconductor laser devices LD are shown in FIG. The manufacturing method has been described with respect to the semiconductor laser device LD composed of three or more semiconductor laser diode elements ld stacked on each other and a semiconductor laser array LA provided with a plurality of semiconductor laser devices LD. It can be manufactured similarly.

  FIG. 4 is a cross-sectional view schematically showing another configuration of the semiconductor laser array in the embodiment.

Here, in the semiconductor laser array LA and the semiconductor laser device LD in the above-described embodiment, the insulating layer 4 is configured by a pnpn thyristor structure, but is not limited to this, and a plurality of semiconductor laser diode elements ld Any other structure may be used as long as it electrically insulates each element. The layer that electrically insulates each of the plurality of semiconductor laser diode elements ld may be, for example, an Al ₂ O ₃ insulating layer formed by subjecting a crystal-grown AlAs layer to steam oxidation, Further, for example, a layer whose resistance is increased by ion implantation (proton implantation) may be used, and for example, a semi-insulating layer may be used. As an example, FIG. 4 shows a semiconductor laser device LDa and a semiconductor laser array LAa composed of two semiconductor laser diode elements ld-1 and ld-2, wherein the layer is an insulating layer 4a made of Al ₂ O ₃ . Show.

The semiconductor laser array LAa and the semiconductor laser device LDa each including the Al ₂ O ₃ insulating layer 4a shown in FIG. 4 between the first semiconductor laser diode element ld-1 and the second semiconductor laser diode element ld-2 are as follows. It is manufactured by each process. First, similarly to the semiconductor laser array LA and the semiconductor laser device LD described above, the first semiconductor laser diode layer 2 and the stop layer 3 are stacked on the substrate 1, and the AlAs layer is stacked on the stop layer 3 by crystal growth. The second semiconductor laser diode layer 5 is stacked on the AlAs layer, and a required portion is etched in the same manner as in the semiconductor laser array LA and the semiconductor laser device LD described above. Then, the insulating layer 4a of Al ₂ O ₃ is formed by being exposed to a steam atmosphere and subjecting the AlAs layer to steam oxidation. Then, similarly to the semiconductor laser array LA and the semiconductor laser device LD described above, the insulating film 10 and the electrodes 6, 8; 7, 9 are formed. Through these steps, the semiconductor laser array LAa and the semiconductor laser device LDa shown in FIG. 4 are manufactured.

The insulating layer 4a made of Al ₂ O ₃ does not require gas switching in the manufacturing process and can be formed thinner than the insulating layer 4 having a pnpn thyristor structure.

  The semiconductor laser arrays LA and LAa and the semiconductor laser devices LD and LDa in the above-described embodiment are made of an AlGaAs-based material and emit laser light having a wavelength of 780 nm, but are not limited thereto. A material is appropriately selected according to a desired emission wavelength band, and an appropriate processing method is selected according to the selected material, and the semiconductor laser arrays LA and LAa having the structure of the present embodiment and the semiconductor laser device LD, LDa can be manufactured. For example, it is possible to manufacture a semiconductor laser array and semiconductor laser device made of an AlGaN-based material, and a semiconductor laser array and semiconductor laser device made of an InGaAsP material.

  Further, although the semiconductor laser arrays LA and LAa and the semiconductor laser devices LD and LDa in the above-described embodiment adopt the ridge structure as the current confinement method, the present invention is not limited to this, and other structures can be adopted. It is. For example, a buried structure such as the first ridge stripe 209 buried in the current blocking layer 210 disclosed in Patent Document 2 may be used. In the case of such an embedded structure, for example, as shown in FIG. 4C, after the ridges 6a and 7a are formed, the ridge 6a is embedded on the cladding layer 23 in the first semiconductor laser diode layer 2a. In addition, an insulating current blocking layer is formed, and an insulating current blocking layer is formed on the cladding layer 53 of the second semiconductor laser diode layer 5 so as to embed the ridge 7a. As a result, a buried structure is formed.

  In order to express the present invention, the present invention has been properly and fully described through the embodiments with reference to the drawings. However, those skilled in the art can easily change and / or improve the above-described embodiments. It should be recognized that this is possible. Accordingly, unless the modifications or improvements implemented by those skilled in the art are at a level that departs from the scope of the claims recited in the claims, the modifications or improvements are not covered by the claims. It is interpreted that it is included in

It is sectional drawing which shows typically the structure of the semiconductor laser array in embodiment. It is a perspective view showing typically the composition of the semiconductor laser array in an embodiment. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor laser array in embodiment. It is sectional drawing which shows typically the other structure of the semiconductor laser array in embodiment. 1 is a perspective view showing a structure of a semiconductor laser device disclosed in Patent Document 1. FIG. 10 is a cross-sectional view showing a structure of a semiconductor laser device disclosed in Patent Document 2. FIG.

Explanation of symbols

LA, LAa Semiconductor laser array LD, LDa Semiconductor laser device ld Semiconductor laser diode element 1 Substrate 2, 5 Semiconductor laser diode layer 3 Stop layer 4, 4a Insulating layer 6, 7, 8, 9 Electrode 10 Insulating film

Claims (5)

A substrate,
A plurality of semiconductor laser diode elements formed above the substrate and stacked on each other;
A semiconductor laser device comprising: an insulating layer formed between elements of the plurality of semiconductor laser diode elements. The semiconductor laser device according to claim 1, wherein each of the plurality of semiconductor laser diode elements individually includes a pair of electrodes. 3. The semiconductor laser according to claim 1, wherein each of the plurality of semiconductor laser diode elements has a light emitting point for emitting the laser light formed at a different height from the substrate. apparatus. A semiconductor laser array device comprising a plurality of semiconductor laser devices according to claim 1, wherein the substrates of the semiconductor laser devices are common. Forming a plurality of semiconductor laser diode elements on top of each other so as to be stacked on each other;
And a step of forming an insulating layer between elements of the plurality of semiconductor laser diode elements.

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