JP2009097982A - Reaction treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reaction treatment apparatus capable of high-accuracy control of the temperatures of a plurality of reaction parts that are formed in a substrate. <P>SOLUTION: The plurality of reaction parts 3 are formed in a well substrate 2, and each reaction part 3 is provided with a heating part 6. Each heating part 6 is provided with at least a heat generating part provided with a thin-film transistor as a thermal source. An element having specific voltage-temperature characteristics, such as, PIN diode is formed in the same region as the heat generating part or in the vicinity region of the heat generating part. The temperature of the heat generating part is detected, on the basis of the previously acquired correlation between voltage values and temperatures for adjusting the current value to be made to flow, through the thin-film transistor on the basis of its temperature. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a reaction processing apparatus in which a plurality of reaction units are provided in the same substrate. More specifically, the present invention relates to a reaction processing apparatus used for processing requiring temperature control such as DNA amplification processing.

  In recent years, in the field of gene analysis or the like, a reaction processing apparatus in which a plurality of reaction units are provided on the same substrate, such as a DNA microarray, has been used. When such a reaction processing apparatus is applied to a process in which a reaction state changes depending on a temperature condition, highly accurate temperature control is required.

  For example, the PCR (Polymerase Cain Reaction) method, which is a kind of gene amplification method, comprises three steps of (i) thermal denaturation, (ii) annealing with a primer, and (iii) polymerase extension reaction in this order. This is a treatment method that can amplify DNA etc. several hundred thousand times by repeatedly performing the amplification cycle, but if the temperature control in each step is insufficient, an irrelevant DNA sequence can be obtained. Amplification may occur or the target DNA may not be amplified. For this reason, in the PCR method, it is necessary to accurately control the temperature of each step in the amplification cycle.

  The PCR method is also becoming a standard method for quantitative analysis of trace nucleic acids because it allows quantitative analysis of trace nucleic acids by monitoring amplification products in real time. Therefore, recently, there is a demand for a reaction processing apparatus that can perform temperature control with higher accuracy and can be applied to the PCR method.

  On the other hand, conventionally, a Peltier module is generally used for heating and cooling in each step of the PCR method (see, for example, Patent Document 1). In the temperature control device described in Patent Document 1, the temperature-controlled liquid is circulated to assist in raising and lowering the temperature of the Peltier module and to improve the temperature slew rate.

  In addition, a reaction processing apparatus configured to heat each reaction part with a semiconductor element has been proposed (see Patent Documents 2 and 3). FIG. 15 is a cross-sectional view showing a conventional reaction processing apparatus described in Patent Document 2. As shown in FIG. 15, in the reaction processing apparatus 100 described in Patent Document 2, a field effect transistor (FET) is formed on a semiconductor substrate 101, and a wall 113 made of a dielectric is provided immediately above the field effect transistor. And a reaction unit 115 surrounded by a lid 114.

  The FET in the reaction processing apparatus 100 is formed with a gate electrode 103 formed on one surface of the semiconductor substrate 101, a channel region 106 formed thereon via an insulating layer 104, and both sides of the channel region 106. The source region 105 and the drain region 107 are formed. These source region 105 and drain region 107 are electrically isolated from the semiconductor substrate 101 by the insulating layer 102. Further, a passivation layer 108 is provided between the FET and the reaction unit 115.

  In the reaction processing apparatus 100, a voltage is applied to the gate electrode 103, and a current is passed between the source region 105 and the drain region 107 via the wirings 111 and 112 connected to the source electrode 109 and the drain electrode 110. As a result, the high-resistance channel region 106 generates heat, and the reaction portion 115 is heated.

  In addition, in the reaction processing apparatus described in Patent Document 3, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having the above-described configuration is integrated on a substrate so that the fluid flowing through the reaction section can be heated. Yes.

  In these reaction processing apparatuses described in Patent Documents 2 and 3, the amount of heat applied to the reaction section can be adjusted by changing the gate potential of the MOSFET to change the resistance between the source and the drain.

Furthermore, conventionally, a method of individually controlling the temperature of each reaction section using a thin film transistor formed corresponding to a heating device has been developed (see Patent Document 4). In the biosensor array described in Patent Document 4, heaters made of a TaN film, a TaSi ₂ film, and the like are formed in a matrix on a substrate as a heating device, and a thin film transistor (TFT) is formed on each heater. Is formed. In addition, a sensor carrying a DNA probe is formed at a position corresponding to each heater.

In this biosensor array, an arbitrary heater is selected by the heater power wiring connected to each heater and the gate electrode wiring connected to each TFT, and power is supplied from the heater power wiring to the heater. The heater can be driven. Furthermore, by scanning the gate electrode, a constant current is supplied to each sensor through the TFT, the temperature of each site is measured from the generated voltage, and the current of the heater power line is adjusted based on the value, The temperature of the reaction part is individually controlled.
JP 2007-110934 A JP 2003-298068 A JP 2004-025426 A JP 2006-170642 A

  However, the conventional techniques described above have the following problems. That is, the technique described in Patent Document 1 has a problem in that the temperatures of a plurality of reaction units cannot be individually controlled. Even when the Peltier module is used for heating and cooling, if a Peltier module is installed for each reaction unit, the temperature of each reaction unit can be individually controlled. . Such a large-sized reaction processing apparatus having a small number of reaction parts is not suitable for the PCR method because the number of samples that can be analyzed at one time is small and exhaustive analysis cannot be performed.

  On the other hand, the reaction processing apparatuses described in Patent Documents 2 and 3 can realize downsizing of the apparatus and integration of reaction parts. However, in general, semiconductor elements tend to have manufacturing variations in characteristics. Even if the same temperature control is performed on the reaction section, there is a problem that the heating amount varies for each reaction section even on the same substrate or on the same substrate.

  Furthermore, since semiconductor devices such as FETs have temperature dependency in their characteristics, there is a problem that the amount of heating varies depending on the temperature even if the applied voltage is the same. For example, a MOSFET using single crystal silicon has negative temperature characteristics, so that the current value decreases as the temperature increases even if the applied voltage is constant.

  Moreover, although the reaction processing apparatus described in Patent Document 4 can individually control the heating temperature and the heating time in the plurality of reaction units, no consideration is given to variations in the supply current value for each heating element. It is difficult to accurately realize the writing accuracy with respect to the current supplied from the control board by each heating circuit. That is, the reaction processing apparatus described in Patent Document 4 has a problem in that high-precision control cannot be performed because the supply current cannot be supplied to the heating circuit with high precision.

  Furthermore, since the conventional reaction processing apparatus described above cannot control the heating temperature and time of a plurality of reaction parts individually and with high accuracy, when applied to the PCR method, the amplification amount of each sample is made constant. There is also a problem that by-products cannot be produced.

  Therefore, the main object of the present invention is to provide a reaction processing apparatus capable of controlling the temperature of a plurality of reaction portions formed in a substrate with high accuracy.

The reaction processing apparatus according to the present invention includes a plurality of reaction units formed in a substrate and a plurality of heating units provided for each of the reaction units, and the heating unit serves as at least a heat source. Based on a correlation between a voltage value and a temperature obtained in advance, including a heat generating part including a thin film transistor and an element having a specific voltage-temperature characteristic formed in the same region as the heat generating part or a peripheral region of the heat generating part. And a temperature detection unit for detecting the temperature of the heat generating unit.
In this reaction processing apparatus, the temperature of the heat generating portion can be determined with high accuracy by detecting the voltage value of the element having specific voltage-temperature characteristics.
Further, the element having the specific voltage-temperature characteristic may be a PIN (p-intrinsic-n) diode. In this case, the temperature of the heat generating part can be obtained from the voltage value of the PIN diode.
In this reaction processing apparatus, the value of the current flowing through the thin film transistor may be adjusted based on the temperature information detected by the temperature detection unit.
Furthermore, the heat generating part can be, for example, a current copier circuit or a current mirror circuit.
Furthermore, in the reaction processing apparatus of the present invention, a scanning line driving circuit, a current driving circuit, a plurality of scanning lines connected to the scanning line driving circuit and arranged in a row direction, and the current driving circuit And a plurality of detection lines arranged in the column direction. In that case, the heating unit is disposed at each intersection of the scanning lines and the detection lines.
Furthermore, the reaction treatment apparatus of the present invention can be used as a PCR apparatus that performs gene amplification in the reaction section.
In that case, you may have further the light irradiation part which irradiates the excitation light of a predetermined wavelength to the said reaction part, and the light detection part which detects the fluorescence generate | occur | produced by the said excitation light.

  According to the present invention, since the element having the specific voltage-temperature characteristic is formed in the same area as the heat generating part or in the peripheral area of the heat generating part, the temperature of the heat generating part is obtained with high accuracy from the voltage value of this element. By adjusting the current value of the thin film transistor of the heat generating portion based on the result, the temperature of the plurality of reaction portions formed in the substrate can be controlled with high accuracy.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a reaction processing apparatus according to the present invention will be described with reference to the accompanying drawings. In addition, this invention is not limited to each embodiment shown below.

  First, the reaction processing apparatus according to the first embodiment of the present invention will be described. In the reaction processing apparatus of this embodiment, a plurality of reaction units are provided in the same substrate, and a heating unit for heating the inside of each reaction unit is provided.

  FIG. 1 is a cross-sectional view schematically showing the structure of the reaction processing apparatus of the present embodiment. As shown in FIG. 1, in the reaction processing apparatus 1 of the present embodiment, a plurality of concave portions are formed as a reaction portion 3 on one surface of a well substrate 2 in a matrix, for example. The size of the reaction part 3 can be set as appropriate according to the application. The material of the well substrate 2 is not particularly limited. For example, when it is necessary to irradiate light from the well substrate 2 side, it is desirable that the well substrate 2 be formed of a transparent material or a light transmissive material.

  On the other hand, on the surface of the well substrate 2 on which the reaction part 3 is formed, an insulating substrate 7 in which a heating part 6 is formed at a position corresponding to the reaction part 3 is disposed. The insulating substrate 7 is bonded to the well substrate 2 via, for example, the filter 4 and an adhesive sealing tape 8 having a high heat conductivity and a thickness of about 10 μm. The material of the insulating substrate 7 in the reaction processing apparatus 1 of the present embodiment is not particularly limited. However, when it is necessary to detect fluorescence from the insulating substrate 7 side, there is no possibility of hindering fluorescence detection. It is desirable to use a transparent substrate. Among various transparent substrates, a glass substrate that is relatively large and on which a semiconductor element such as a TFT can be easily formed on the surface is particularly suitable.

  The reaction processing apparatus 1 can be used as a PCR apparatus that performs gene amplification in the reaction unit 3. In that case, a light irradiation part (not shown) including a light source for irradiating the reaction part with excitation light is provided, and in order to detect fluorescence generated by the excitation light, an insulating substrate 7 is provided with a photodiode or the like. An optical detection unit 5 can be provided. Furthermore, when using the reaction processing apparatus of this embodiment as a PCR apparatus, you may arrange | position the Peltier module etc. for assisting temperature control.

  Next, the heating unit 6 of the reaction processing apparatus 1 of the present embodiment will be described in detail. FIG. 2 is a block diagram showing each heating unit in the reaction processing apparatus of this embodiment. As shown in FIG. 2, a scanning line driving circuit 10 and a current driving circuit 11 are provided on the insulating substrate 7 of the reaction processing apparatus of this embodiment. The scanning line driving circuit 10 is connected to a plurality of scanning lines 12 arranged in the row direction, and the current driving circuit 11 is connected to a plurality of detection lines 13 arranged in the column direction. A matrix is formed by these scanning lines 12 and detection lines 13, and a heater unit 14 that constitutes the heating unit 6 is disposed at each of these intersections.

  FIG. 3 is a diagram showing a circuit constituting the heater unit 14 shown in FIG. As shown in FIG. 3, the heater unit 14 is provided with at least a current control temperature generation circuit 17 that constitutes a heat generating part, and a temperature detection circuit 18 that constitutes a temperature detection part for detecting the temperature of the heat generating part. It has been. The current control temperature generation circuit 17 incorporates a field effect transistor that generates heat as a current flows and becomes a heat source, and the temperature detection circuit 18 incorporates an element having specific voltage-temperature characteristics such as a PIN diode. It is.

  The current control temperature generation circuit 17 in the reaction processing apparatus of this embodiment is a current copier type circuit, and includes four N-channel insulated gate field effect transistors (hereinafter simply referred to as transistors) T1 to T4 and a capacitor C1. It has been.

  Specifically, the drain terminal of the transistor T1 is connected to the source terminal of the transistor T2 whose drain terminal is connected to the power supply electrode VDD, and the source terminal of the transistor T1 is connected to the ground electrode GND. Further, between the source terminal of the transistor T2 and the drain terminal of the transistor T1, in order from the transistor T2 side, the source terminal of the transistor T3 whose drain terminal is connected to the data line 15 and the source terminal of one of the capacitors C1. The drain terminal of the transistor T4 connected to the terminal is connected.

  The gate terminals of these transistors T2 to T4 are all connected to the write scanning line 16. The gate terminal of the transistor T1 is connected between the drain terminal of the transistor T4 and one terminal of the capacitor C1. Furthermore, the other terminal of the capacitor C1 is connected between the source terminal of the transistor T1 and the ground electrode GND.

  The temperature detection circuit 18 is provided with two transistors T5 and T6 and a PIN diode (hereinafter also simply referred to as a diode) D1. Specifically, the gate terminal of the transistor T5 is connected to the gate terminal of the transistor T5 whose drain terminal is connected to the data line and whose gate terminal is connected to the scanning line 12. The source terminals of the transistors T5 and T6 are all connected to one terminal of the diode D1, and the other terminal of the diode D1 is connected to the ground electrode GND.

  In the heater unit 14 shown in FIG. 3, the heat generation information amount current line and the temperature information detection current line can be shared, and the data line 15 corresponds to these.

  Next, the operation of the heater unit 14 having the circuit configuration described above will be described. In the heater 14, the drive current of the current control temperature generation circuit 17 flows between the power supply electrode VDD and the ground electrode GND via the transistors T1 and T2. At this time, since Joule heat is generated by the resistance components of the transistors T1 and T2, it can be used as a heat source.

  In this current control temperature generation circuit 17, since the transistor T2 and the transistors T3 and T4 are independently controlled, both the write scanning line 16 and the scanning line 12 are set to a low level at the time of signal writing, and after writing is completed. That is, after the write scanning line 16 is set to the high level, the heating operation can be performed by setting the scanning line 12 to the high level at an arbitrary timing.

  Further, since the heat generation operation can be easily stopped by setting the scanning line 12 to a low level, it is suitable for a case where it is desired to quickly lower the temperature. Moreover, since the heat generation operation time can be adjusted, for example, even when it is difficult for the signal current source to accurately generate a small current, an accurate minute heat generation operation can be realized. . When it is desired to avoid intermittent heating due to such an operation, a plurality of heating and heating stops are performed within a period from when the heating amount information is written until the next heating amount information is written. By repeating the process repeatedly, more time-stable heating can be performed.

On the other hand, in the temperature detection circuit 18, the detection current I _det is passed through the diode D 1 with the scanning line 12 selected, and the temperature is detected in units of scanning lines. More specifically, the temperature of the heat source is extrapolated by using the temperature dependence with respect to the voltage difference when two types of currents are written.

FIG. 4 is a graph showing the relationship between the voltage value of the diode D1 and the current value flowing through the heater unit 14, with the heater current on the horizontal axis and the diode voltage on the vertical axis. For example, the voltage value difference (ΔV) when the current value of the diode D1 shown in FIG. In addition, η shown in the following formula 1 is a manufacturing process ideal factor (≈1), k is a Boltzmann coefficient (1.38 × 10 ⁻²³ J / K), and q is an electronic charge (1.6 × 10 ^−19). C), IF ₁ and IF ₂ are diode current values.

  Further, the voltage value difference (ΔV) obtained by Equation 1 can be converted to temperature by Equation 2 below.

  In this temperature detection circuit 18, since a PIN diode is used as a detection element, a high voltage value can be detected as an absolute output value with respect to the write current. As a result, since the resolution in temperature detection is higher than that of the conventional heating device, the accuracy in converting the voltage analog detection value into a digital signal by an analog-digital converter or the like is improved in the temperature adjustment process described later.

  In the temperature detection circuit 18, since the drive line and the detection line are independent, the temperature detection circuit 18 is not affected by the resistance component of the transistor T1. Thereby, detection accuracy can be improved significantly.

  In the reaction processing apparatus 1 of the present embodiment, the temperature at which the current control temperature generation circuit 17 generates heat is adjusted based on the temperature detected by the temperature detection circuit 18. As the method, for example, an analog digital converter, a digital potentiometer and a CPU are provided together with the current control temperature generation circuit 17 and the temperature detection circuit 18 described above, and current control temperature generation is performed so that the temperature is preset by the CPU. There is a method of adjusting the current flowing through the circuit 17. In that case, information on the set temperature can be recorded in an external computer, an external recording device, an internal storage device of a CPU, or the like.

  Specifically, first, a digital control signal is output from the CPU to the digital potentiometer so as to obtain an optimum current value for the set temperature. Thus, the heating unit is adjusted to a predetermined temperature by the digital potentiometer and the current control temperature generation circuit 17.

  On the other hand, as described above, the voltage value of the temperature detection circuit 18 changes according to the temperature of the reaction region. This change in voltage value is detected by a detection circuit, the signal is converted as a digital signal by an analog-digital converter, and is taken into the CPU as digital data.

  In the CPU, the voltage value detected by the temperature detection circuit 18 is converted into a temperature, and the temperature information obtained as a result and the difference between the set temperatures are calculated. And a digital signal is output to a digital potentiometer so that it may become an electric current value optimal for preset temperature. Thus, by feeding back the temperature information detected by the temperature detection circuit 18 and adjusting the current flowing through the current control temperature generation circuit 17, the temperature of the reaction section can be controlled with higher accuracy.

  FIGS. 5A to 5D are plan views schematically showing the arrangement of the current control temperature generation circuit 17 and the temperature detection circuit 18. The arrangement of the current control temperature generation circuit 17 and the temperature detection circuit 18 described above is not particularly limited and can be set as appropriate. For example, as shown in FIG. It may be formed in the region, or may be formed at positions adjacent to each other as shown in FIGS. As described above, the temperature detection is performed in real time by providing the current control temperature generation circuit 17 as the heat generation unit and the temperature detection circuit 18 as the temperature detection unit in one heating unit (heater unit 14). be able to. As a result, the calorific value control feedback can be realized with high accuracy, and highly accurate reaction control can be realized.

  As described above, in the reaction processing apparatus of the present embodiment, a temperature detection circuit including a PIN diode is provided in the heating unit that heats the reaction unit, and the temperature of the heating unit is detected using the specific voltage-temperature characteristics. The current value of the current-controlled temperature generation circuit with a transistor that serves as a heat source is adjusted based on the results, greatly improving the accuracy of temperature control compared to conventional control methods using semiconductor elements. Can be made. As a result, an accurate amount of generated heat can be obtained even if the characteristics of the semiconductor element serving as the heat source vary, and the reliability when applied to the PCR method is improved.

  Moreover, in the reaction processing apparatus of this embodiment, the temperature of each reaction part can be individually controlled by carrying out active matrix control of the heater unit 14 provided in each heating part. Therefore, when applied to the PCR method, it is possible to comprehensively analyze gene expression levels in a short time.

  Furthermore, since the heat generation operation can be stopped in units of scanning lines, the temperature of the reaction section can be lowered easily and quickly, and the heat generation time can be controlled. As a result, minute heat generation control can be easily performed.

  Next, a reaction processing apparatus according to the second embodiment of the present invention will be described. In the reaction processing apparatus of the first embodiment described above, a temperature detection circuit including a PIN diode and two transistors is provided, but the present invention is not limited to this, and the transistor of the temperature detection circuit is One may be sufficient.

  FIG. 6 is a diagram showing the configuration of the temperature detection circuit in the reaction processing apparatus of this embodiment. As shown in FIG. 5, the temperature detection circuit 28 in the present embodiment is provided with one transistor T15 and one PIN diode D11. Specifically, the drain terminal of the transistor T15 is connected to the detection line 13, the source terminal is connected to one terminal of the diode D11, and the gate terminal is connected to the scanning line 12. The other terminal of the diode D11 is connected to the ground electrode GND.

The temperature detection circuit 28 also scans the scanning line I by _{passing the} detection current I _det to the diode D11 with the detection line 13 selected, similarly to the temperature detection circuit 18 of the first embodiment shown in FIG. The temperature can be detected in 12 units. Then, the temperature information detected by the temperature detection circuit 18 is fed back, and the current flowing through the current control temperature generation circuit is adjusted, whereby the temperature of the reaction section can be individually and accurately controlled.

  The other configurations and effects of the reaction processing apparatus 28 of the present embodiment are the same as those of the reaction processing apparatus of the first embodiment described above.

  In the reaction processing apparatuses of the first and second embodiments described above, the current control temperature generation circuit is configured as a current copier circuit including four N-channel insulated gate field effect transistors and a capacitor. The present invention is not limited to this, and various current copy circuits and current mirror circuits can be applied to the current control temperature generation circuit. 7 to 14 are circuit diagrams showing modifications of the current control temperature generation circuit.

  Specifically, like the current control temperature generation circuit of the first modification shown in FIG. 7, it can also be constituted by three switches SW21 to SW23, a transistor T21, and a capacitor C21. In that case, the drive current flows between the power supply electrode VDD and the ground electrode GND via the transistor T21, and the reaction part is heated by Joule heat generated by the resistance component of the transistor T21 and the switch SW23.

  Further, the current control temperature generation circuit of the second modification shown in FIG. 8 is different from the circuit of the first modification shown in FIG. 7 in the connection relationship of the switches. However, the switches SW31 and SW32 are turned on during signal writing. At the same time, by turning off the switch SW33, and turning off the switches SW31 and SW32 and turning on the switch SW33 during the heat generation operation, the same effect as in the first modification can be obtained.

  Furthermore, the current control temperature generation circuit of the third modification shown in FIG. 9 is obtained by replacing the transistor T41 with a P-channel transistor. Although this circuit is different in the direction of current, in principle, it is the same circuit as the first modification described above and exhibits the same function. For example, when these elements are formed of low-temperature polysilicon, the characteristics of the PMOS are generally more stable, so that this configuration is more practical.

Furthermore, the current control temperature generation circuit of the fourth modification shown in FIG. 10 differs from the circuit of the first modification described above in that it draws a signal current from the source terminal side of the transistor T51, but each switch SW51 to SW53. The control of is different. Further, the operation principle is that the signal current is supplied with the gate and drain of the transistor T51 short-circuited, and the gate-source voltage V _gs generated accordingly is held in the capacitor C51. It performs the same function as the temperature generation circuit.

On the other hand, the current control temperature generation circuit of the fifth modification shown in FIG. 11 is obtained by adding a transistor T22, a switch SW24, and a capacitor C22 to the circuit of the first modification. In this circuit, the switch SW24 is controlled similarly to the switch SW22. Specifically, paying attention to the transistor T21, as in the circuit of the first modification, the drain-source voltage _Vds generally does not coincide between writing and driving.

However, for example, when direction of the drain-source voltage V _ds at the time of driving is large, although the direction of the drive current I _drv than the signal current I _sig is increased, if the transistor T22 is operating in saturation, i.e. If the operation is close to that of a constant current source, the differential resistance is extremely large, so that the source potential of the transistor T21 is greatly increased even if the drive current _Idrv is slightly increased. This acts in the direction of decreasing the drive current _Idrv by decreasing the gate-source voltage _Vgs of the transistor T21. As a result, since it is possible to suppress the drive current _Idrv from significantly increasing with respect to the signal current I _sig , the drive current _Idrv and the signal current I _sig are inconsistent as compared with the circuit of the first modified example described above. Can be improved.

  Further, the current control temperature generation circuit of the sixth modification shown in FIG. 12 is a modification of the circuit shown in FIG. In general, TFTs are likely to be defective. For example, if a minute leak current is allowed to flow when the switch transistor is in an off state, a malfunction occurs stochastically. For this reason, in the case of the circuit shown in FIG. 3, when a leak current is generated in the transistor T4, the voltage held in the capacitor C1 may change due to the leak current, and the correct initial sleep state may not be maintained. Therefore, the circuit of the sixth modification is constituted by two transistors T4a and T4b in which the transistor T4 shown in FIG. 3 is connected in series. Further, three or more transistors can be connected in series as the transistor T4, and the transistors T2 and T3 can have the same configuration. Thereby, even when a malfunction occurs on one side, the leakage current can be suppressed as a whole.

  Further, the current control temperature generation circuit of the seventh modification shown in FIG. 13 is a modification of the circuit shown in FIG. 3, and the transistor T2 is a diode D2. In the circuit of the seventh modification, the power supply electrode VDD is wired in parallel with the scanning line 12, and at the time of signal writing, the power supply potential is set to a low level to turn off the diode D2, and at the time of driving the power supply The diode D2 is turned on by raising the potential. In the circuit of the present modification, the diode D2 operates as a switch, and thus exhibits the same function as the circuit shown in FIG.

Furthermore, the current control temperature generation circuit of the eighth modification shown in FIG. 14 is provided with a transistor T61 for converting the signal current I _sig into a voltage form and a transistor T62 for supplying a current for heat generation. This is different from the circuit of the first modification shown in FIG. In this circuit, at the time of signal writing, the switches SW61 and SW62 are turned on, and the signal current I _sig is supplied to the transistor T61.

In the circuit of the eighth modification, the ratio of the signal current I _sig and the drive current I _drv can be arbitrarily adjusted. For example, if it is difficult to generate a minute current in an external circuit when it is desired to generate a minute amount of heat, the channel width may be adjusted so that the right side of Equation 3 below becomes smaller. Conversely, it is easy to design so that a large drive current can be controlled by a minute signal current. In Equation 3 below, W ₁ is the channel width of the transistor T61, and W ₂ is the channel width of the transistor T62.

It is sectional drawing which shows typically the structure of the reaction processing apparatus which concerns on the 1st Embodiment of this invention. It is a block diagram which shows each heating part in the reaction processing apparatus of the 1st Embodiment of this invention. It is a figure which shows the circuit which comprises the heater unit 14 shown in FIG. It is a graph which shows the relationship between the voltage value of the diode D1, and the electric current value which flows through the heater unit 14, taking a heater current on a horizontal axis and taking a diode voltage on a vertical axis. (A)-(d) is a top view which shows typically arrangement | positioning of the current control temperature generation circuit 17 and the temperature detection circuit 18. FIG. It is a figure which shows the structure of the temperature detection circuit in the reaction processing apparatus of the 2nd Embodiment of this invention. It is a figure which shows the 1st modification of a current control temperature generation circuit. It is a figure which shows the 2nd modification of a current control temperature generation circuit. It is a figure which shows the 3rd modification of a current control temperature generation circuit. It is a figure which shows the 4th modification of a current control temperature generation circuit. It is a figure which shows the 5th modification of a current control temperature generation circuit. It is a figure which shows the 6th modification of a current control temperature generation circuit. It is a figure which shows the 7th modification of a current control temperature generation circuit. It is a figure which shows the 8th modification of a current control temperature generation circuit. It is sectional drawing which shows the conventional reaction processing apparatus of patent document 2.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,100 Reaction processing apparatus 2 Well substrate 3,115 Reaction part 4 Filter 5 Light detection part 6 Heating part 7 Insulating substrate 8 Sealing tape 10 Scanning line drive circuit 11 Current drive circuit 12 Scanning line 13 Detection line 14 Heater unit 15 Data Line 16 Write scanning line 17 Current control temperature generation circuit 18, 28 Temperature detection circuit 101 Semiconductor substrate 102, 104 Insulating layer 103 Gate electrode 105 Source region 106 Channel region 107 Drain region 108 Passivation layer 109 Source electrode 110 Drain electrode 111, 112 Wiring 113 Wall 114 Lid C1, C21, C22, C31, C41, C51, C61 Capacitor D1, D2, D11 PIN diode T1, T2, T3, T4, T4a, T4b, T5, T6, T15, T21, T22, 31, T41, T51, T61, T62 transistors SW21, SW22, SW23, SW24, SW31, SW32, SW33, SW41, SW42, SW43, SW51, SW52, SW53, SW61, SW62 switch I _det detection current I _sig signal current V _gs gate-source voltage V _ds drain-source voltage GND ground electrode VDD power supply electrode

Claims (7)

A plurality of reaction parts formed in the substrate;
A plurality of heating units provided for each reaction unit,
The heating unit includes at least
A heat generating portion including a thin film transistor serving as a heat source;
An element having a specific voltage-temperature characteristic is formed in the same area as the heat generating part or in the peripheral area of the heat generating part, and the temperature of the heat generating part is determined based on the correlation between the voltage value and the temperature obtained in advance. A temperature detection unit for detecting
Is provided with a reaction processing apparatus.   2. The reaction processing apparatus according to claim 1, wherein the element having the specific voltage-temperature characteristic is a PIN (p-intrinsic-n) diode, and the temperature of the heat generating portion is obtained from a voltage value of the PIN diode. .   The reaction processing apparatus according to claim 2, wherein a value of a current flowing through the thin film transistor is adjusted based on temperature information detected by the temperature detection unit.   The reaction processing apparatus according to claim 3, wherein the heat generating unit is a current copier circuit or a current mirror circuit. A scanning line driving circuit;
A current drive circuit;
A plurality of scanning lines connected to the scanning line driving circuit and arranged in a row direction;
A plurality of detection lines connected to the current driving circuit and arranged in a column direction,
The reaction processing apparatus according to claim 4, wherein the heating unit is disposed at each intersection of the scanning line and the detection line.   The reaction processing apparatus according to claim 5, wherein the reaction processing apparatus is a PCR (Polymerase Cain Reaction) apparatus that performs gene amplification in the reaction section. Furthermore, a light irradiation unit that irradiates the reaction unit with excitation light having a predetermined wavelength;
A light detection unit for detecting fluorescence generated by the excitation light;
The reaction processing apparatus according to claim 6, wherein

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