JP2009081451A5 - - Google Patents

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Publication number
JP2009081451A5
JP2009081451A5 JP2008290578A JP2008290578A JP2009081451A5 JP 2009081451 A5 JP2009081451 A5 JP 2009081451A5 JP 2008290578 A JP2008290578 A JP 2008290578A JP 2008290578 A JP2008290578 A JP 2008290578A JP 2009081451 A5 JP2009081451 A5 JP 2009081451A5
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JP
Japan
Prior art keywords
layer
metal
ruthenium
conductive oxide
element according
Prior art date
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Pending
Application number
JP2008290578A
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Japanese (ja)
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JP2009081451A (en
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Priority to JP2008290578A priority Critical patent/JP2009081451A/en
Priority claimed from JP2008290578A external-priority patent/JP2009081451A/en
Publication of JP2009081451A publication Critical patent/JP2009081451A/en
Publication of JP2009081451A5 publication Critical patent/JP2009081451A5/ja
Pending legal-status Critical Current

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Claims (3)

フリー層に直接接する最表層として保護層が設けられた磁気抵抗効果素子において、前記保護層が、Ｒｕ（ルテニウム）、Ｒｈ（ロジウム）、Ｏｓ（オスミウム）、Ｎｂ（ニオブ）、Ｉｒ（イリジウム）、及びＲｅ（レニウム）のいずれか１つの金属からなる金属層で、該金属層の表面が前記金属の酸化物からなる導電性酸化物層であることを特徴とする磁気抵抗効果素子。 In the magnetoresistive effect element provided with a protective layer as an outermost layer in direct contact with the free layer, the protective layer includes Ru (ruthenium), Rh (rhodium), Os (osmium), Nb (niobium), Ir (iridium), And a magnetoresistive element , wherein the surface of the metal layer is a conductive oxide layer made of an oxide of the metal. 前記金属層がＲｕ（ルテニウム）からなることを特徴とする請求項１に記載の磁気抵抗効果素子。 The element according to claim 1 wherein the metal layer is characterized in that Ranaru or Ru (ruthenium). 前記導電性酸化物層の抵抗率は、６．０×１０-6Ωｍ以下であることを特徴とする請求項１に記載の磁気抵抗効果素子。 2. The magnetoresistive element according to claim 1, wherein the resistivity of the conductive oxide layer is 6.0 × 10 −6 Ωm or less.
JP2008290578A 2008-11-13 2008-11-13 Magnetoresistance effect element Pending JP2009081451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008290578A JP2009081451A (en) 2008-11-13 2008-11-13 Magnetoresistance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008290578A JP2009081451A (en) 2008-11-13 2008-11-13 Magnetoresistance effect element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004240838A Division JP2006060044A (en) 2004-08-20 2004-08-20 Manufacturing method of magnetoresistance effect element

Publications (2)

Publication Number Publication Date
JP2009081451A JP2009081451A (en) 2009-04-16
JP2009081451A5 true JP2009081451A5 (en) 2009-05-28

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ID=40655920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008290578A Pending JP2009081451A (en) 2008-11-13 2008-11-13 Magnetoresistance effect element

Country Status (1)

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JP (1) JP2009081451A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101566925B1 (en) 2010-01-29 2015-11-16 삼성전자주식회사 Method of fabricating semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223412A (en) * 2000-02-09 2001-08-17 Fujitsu Ltd Lead head element and its manufacturing method
JP4050446B2 (en) * 2000-06-30 2008-02-20 株式会社東芝 Solid state magnetic memory
US6709767B2 (en) * 2001-07-31 2004-03-23 Hitachi Global Storage Technologies Netherlands B.V. In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
JP3888168B2 (en) * 2002-01-21 2007-02-28 ヤマハ株式会社 Manufacturing method of magnetic tunnel junction element
JP4382333B2 (en) * 2002-03-28 2009-12-09 株式会社東芝 Magnetoresistive element, magnetic head, and magnetic reproducing apparatus
JP2004146552A (en) * 2002-10-24 2004-05-20 Fujitsu Ltd Forming method of minute resist pattern
JP3931876B2 (en) * 2002-11-01 2007-06-20 日本電気株式会社 Magnetoresistive device and manufacturing method thereof

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