JP2009076784A5 - - Google Patents

Claims (7)

An oxide film in which the halogen is contained in the semiconductor wafer at a concentration of 1 × 10 ¹⁷ / cm ^{3 to} 5 × 10 ²⁰ / cm ³ by performing thermal oxidation with halogen added to the semiconductor wafer in an oxidizing atmosphere. Forming,
Ionized hydrogen, which is heavier than protons in mass, is accelerated by an electric field and injected into the semiconductor wafer through the oxide film to form a separation layer at a predetermined depth from the surface of the semiconductor wafer. ,
Forming a first insulating layer containing nitrogen on the oxide film on one surface side of the semiconductor wafer;
Forming a second insulating layer on the first insulating layer on one side of the semiconductor wafer;
And one surface side of the substrate having an insulating surface, said semiconductor wherein formed on one surface side of the wafer the second by bonding the insulating layer by heat treatment and pressure treatment, a substrate having the insulating surface Improving the bonding strength with the semiconductor wafer,
The semiconductor wafer is peeled off with the semiconductor layer having a thickness of 200 nm or less remaining on one surface of the substrate having the insulating surface with the separation layer or its vicinity as a cleavage plane. A method for manufacturing a substrate. Forming a first insulating layer containing nitrogen on one surface of the semiconductor wafer;
Ionized hydrogen ions whose mass is heavier than protons are accelerated by an electric field, injected into the semiconductor wafer through the first insulating layer, and separated into a predetermined depth from the surface of the semiconductor wafer. Form the
Forming a second insulating layer on the first insulating layer on one side of the semiconductor wafer;
One surface side of the substrate having an insulating surface and the second insulating layer formed on the one surface side of the semiconductor wafer are bonded together to perform heat treatment, and the substrate having the insulating surface and the semiconductor wafer Improve the bonding strength of
The semiconductor wafer is peeled off with the semiconductor layer having a thickness of 200 nm or less remaining on one surface of the substrate having the insulating surface with the separation layer or its vicinity as a cleavage plane. A method for manufacturing a substrate. In claim 1 or 2,
A method for producing a semiconductor substrate, comprising subjecting the semiconductor layer to a surface smoothing treatment by laser annealing in an inert gas having an oxygen concentration of 10 ppm or less. In any one of Claims 1 thru | or 3,
The first insulating layer has a stacked structure of a silicon oxynitride layer having a higher oxygen content than nitrogen and a silicon nitride oxide layer having a higher nitrogen content than oxygen. Production method. In any one of Claims 1 thru | or 4,
A method of manufacturing a semiconductor substrate, wherein a glass substrate is used as the substrate having an insulating surface. In any one of Claims 1 thru | or 5,
To produce hydrogen plasma, without ion mass separation, which is generated in the plasma, by an acceleration child in the electric field, the mass comprising said ionized hydrogen is heavy hydrogen ions than protons H ₃ ⁺ ions The semiconductor substrate manufacturing method is characterized in that the semiconductor substrate is implanted into the semiconductor wafer so that the ratio of 80% or more is included . In any one of Claims 1 thru | or 5,
To produce hydrogen plasma, by the ions produced in the plasma mass separation, the mass comprising said ionized hydrogen by a child accelerated by an electric field heavy hydrogen ions than protons are injected into the semiconductor wafer A method of manufacturing a semiconductor substrate.