JP2009065210A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009065210A5 JP2009065210A5 JP2008323112A JP2008323112A JP2009065210A5 JP 2009065210 A5 JP2009065210 A5 JP 2009065210A5 JP 2008323112 A JP2008323112 A JP 2008323112A JP 2008323112 A JP2008323112 A JP 2008323112A JP 2009065210 A5 JP2009065210 A5 JP 2009065210A5
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- sample preparation
- optical system
- sample
- irradiation optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 claims 20
- 239000000523 sample Substances 0.000 claims 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 8
- 230000003287 optical Effects 0.000 claims 8
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 claims 7
- 229910052786 argon Inorganic materials 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 230000001678 irradiating Effects 0.000 claims 1
- 229910001338 liquidmetal Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
Claims (8)
アルゴン、酸素、窒素等のガスイオンを前記基板に照射する第二イオンビーム照射光学系を備え、前記第一イオンビーム照射光学系のイオンビームが照射された領域を少なくとも含んだ領域に第２イオンビーム照射光学系のイオンビームが照射できるように構成されている試料作製装置。 A sample stage that can move while holding the substrate, and a first ion beam irradiation optical system that irradiates the substrate with ions emitted from a liquid metal ion source, and is irradiated from the first ion beam irradiation optical system A sample production apparatus for producing a micro sample by processing the substrate with an ion beam,
A second ion beam irradiation optical system for irradiating the substrate with gas ions such as argon, oxygen, nitrogen, etc. includes second ions in a region including at least a region irradiated with the ion beam of the first ion beam irradiation optical system. A sample preparation apparatus configured to irradiate an ion beam of a beam irradiation optical system.
デポ膜の元材料ガスを供給するデポガス源を備えることを特徴とする試料作製装置。 The sample preparation apparatus according to claim 1,
A sample preparation apparatus comprising a deposition gas source for supplying a source material gas for a deposition film.
前記第一イオンビーム照射光学系が、ガリウムイオンビームを照射することを特徴とする試料作製装置。 In the sample preparation device according to any one of claims 1 and 2,
The sample preparation apparatus, wherein the first ion beam irradiation optical system irradiates a gallium ion beam.
前記第二イオンビーム照射光学系が、アルゴンイオンビームを照射することを特徴とする試料作製装置。 In the sample preparation device according to claim 3,
The sample preparation apparatus, wherein the second ion beam irradiation optical system irradiates an argon ion beam.
前記ガリウムイオンビームの照射条件を記憶する計算処理装置を備え、当該記計算処理装置が、前記ガリウムイオンビームの照射条件に基づいて前記第二イオンビーム照射光学系を制御し、是前記ガリウムイオンビームが照射された領域に前記アルゴンイオンビームを照射することを特徴とする試料作製装置。 In the sample preparation device according to claim 4,
A calculation processing device for storing irradiation conditions of the gallium ion beam, the calculation processing device controlling the second ion beam irradiation optical system based on the irradiation conditions of the gallium ion beam, and the gallium ion beam; A sample preparation apparatus that irradiates a region irradiated with the argon ion beam.
前記計算処理装置が、前記ガリウムイオンビームの照射条件からガリウムイオンビームの照射量を計算し、当該ガリウムイオンビームの照射量に基づいて前記アルゴンイオンビームの照射量を制御することを特徴とする試料作製装置。 In the sample preparation device according to claim 5,
The calculation processing device calculates the irradiation amount of the gallium ion beam from the irradiation condition of the gallium ion beam, and controls the irradiation amount of the argon ion beam based on the irradiation amount of the gallium ion beam. Production device.
作製されたマイクロサンプルを摘出するプローブを備えることを特徴とする試料作製装置。 In the sample preparation device according to any one of claims 1 to 6,
A sample preparation device comprising a probe for extracting a prepared microsample.
摘出されたマイクロサンプルを固定する試料ホルダを備えることを特徴とする試料作製装置。 In the sample preparation device according to any one of claims 1 to 7,
A sample preparation device comprising a sample holder for fixing an extracted microsample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008323112A JP4877318B2 (en) | 2008-12-19 | 2008-12-19 | Inspection / analysis method and sample preparation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008323112A JP4877318B2 (en) | 2008-12-19 | 2008-12-19 | Inspection / analysis method and sample preparation apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000169049A Division JP2001345360A (en) | 2000-06-01 | 2000-06-01 | Inspecting and analyzing method and sample manufacturing apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009065210A JP2009065210A (en) | 2009-03-26 |
| JP2009065210A5 true JP2009065210A5 (en) | 2010-08-05 |
| JP4877318B2 JP4877318B2 (en) | 2012-02-15 |
Family
ID=40559438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008323112A Expired - Lifetime JP4877318B2 (en) | 2008-12-19 | 2008-12-19 | Inspection / analysis method and sample preparation apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4877318B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114486926B (en) * | 2021-12-30 | 2024-03-26 | 深圳瑞波光电子有限公司 | Failure analysis method for semiconductor laser chip |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH087121B2 (en) * | 1990-07-18 | 1996-01-29 | セイコー電子工業株式会社 | Focused charged beam processing method |
| JPH04343040A (en) * | 1991-05-21 | 1992-11-30 | Hitachi Sci Syst:Kk | Ion milling device with ion gun for finishing |
| JP3117836B2 (en) * | 1993-03-02 | 2000-12-18 | セイコーインスツルメンツ株式会社 | Focused ion beam equipment |
| JPH07312198A (en) * | 1994-05-16 | 1995-11-28 | Hitachi Ltd | Focusing ion beam device |
| JPH08327514A (en) * | 1995-06-05 | 1996-12-13 | Nippondenso Co Ltd | Preparation of sample for transmission electron microscope and device therefor |
| JP3965761B2 (en) * | 1998-03-10 | 2007-08-29 | 株式会社日立製作所 | Sample preparation apparatus and sample preparation method |
-
2008
- 2008-12-19 JP JP2008323112A patent/JP4877318B2/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2018132202A3 (en) | Additive manufacturing using a dynamically grown build envelope | |
| JP6105204B2 (en) | Sample preparation method for TEM observation | |
| EP2495748A4 (en) | Charged particle radiation apparatus, and method for displaying three-dimensional information in charged particle radiation apparatus | |
| ATE504926T1 (en) | TREATMENT STATION FOR PARTICLE BOMBARDING A PATIENT AND PARTICLE THERAPY INSTALLATION | |
| TW200608489A (en) | Plasma treatment method and plasma etching method | |
| JP2007129214A (en) | Stage assembly, particle-optical apparatus including such stage assembly, and method of treating sample in such apparatus | |
| TW200700927A (en) | Lithographic device, device manufacturing method and device manufactured thereby | |
| JP2010056543A5 (en) | ||
| TW200616091A (en) | Method of manufacturing thin film semiconductor device | |
| WO2009104886A3 (en) | Laser-processing device | |
| WO2011011661A3 (en) | Method and apparatus for the monitoring of sample milling in a charged particle instrument | |
| US20130180960A1 (en) | Pulsed laser deposition apparatus and deposition method using same | |
| WO2011130100A3 (en) | Ion beam sample preparation apparatus and methods | |
| JP2013011540A5 (en) | ||
| TW200733241A (en) | Method and apparatus for activating a chemical compound semiconductor | |
| JP2010230612A5 (en) | ||
| Shin et al. | Preparation of polyynes by laser ablation of graphite in aqueous media | |
| He et al. | Maskless laser nano-lithography of glass through sequential activation of multi-threshold ablation | |
| JP2013096890A5 (en) | ||
| Roberts et al. | In situ laser processing in a scanning electron microscope | |
| JP2009065210A5 (en) | ||
| JP2012074194A5 (en) | ||
| JP2013161647A5 (en) | ||
| JP2013195380A (en) | Sample preparation method | |
| RU2009115827A (en) | LASER-PLASMA METHOD FOR SYNTHESIS OF HIGH-SOLID MICRO AND NANOSTRUCTURED COATINGS AND DEVICE |