JP2009059872A - Semiconductor manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which eliminates a cleaning operation in an outside reaction tube. <P>SOLUTION: The vertical-type CVD apparatus 1 (semiconductor manufacturing apparatus) includes an inside reaction tube 3 in which a semiconductor substrate 50 is located, an outside reaction tube 5 which is located so as to cover the outside of the inside reaction tube 3 and a vacuum flange 6 is fitted on a bottom portion 5a, and the inside reaction tube 4 which is positioned between the inside reaction tube 3 and the outside reaction tube 5 and covers the side and upper side of the inside reaction tube 3. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus including an inner reaction tube and an outer reaction tube.

  Conventionally, a semiconductor manufacturing apparatus including an inner reaction tube and an outer reaction tube is known (for example, see Patent Document 1).

  FIG. 7 is a cross-sectional view showing the structure of the semiconductor manufacturing apparatus disclosed in Patent Document 1. As shown in FIG. 7, the semiconductor manufacturing apparatus 101 of Patent Document 1 includes a substrate boat 102 that holds a plurality of semiconductor substrates 110, an inner tube (inner reaction tube) 103 in which the substrate boat 102 is disposed, An outer tube (outer reaction tube) 104 disposed so as to cover the outer side of the inner tube 103, a protective cover 105 disposed between the inner tube 103 and the outer tube 104, and covering a lower side surface of the inner tube 103; A manifold (vacuum flange) 106 attached to the bottom of the tube 104 and an annular heater 107 disposed on the side of the outer tube 104 are provided.

  In the conventional semiconductor manufacturing apparatus 101 shown in FIG. 7, when the film is formed on the semiconductor substrate 110, the inside of the outer tube 104 is evacuated. Then, by supplying a process gas from the manifold 106 to the inside of the inner tube 103, a predetermined film is formed on the semiconductor substrate 110 and a process gas (unreacted gas) that has not been used for film formation on the semiconductor substrate 110 is formed. ) Is passed between the inner tube 103 and the outer tube 104 and discharged to the outside.

  In such a semiconductor manufacturing apparatus 101, reaction products adhere to the substrate boat 102, the inner tube 103, the outer tube 104, and the like due to a process gas (unreacted gas) that has not been used for film formation on the semiconductor substrate 110. Since this reaction product adversely affects film formation, it is necessary to periodically clean the substrate boat 102, the inner tube 103, the outer tube 104, and the like with a chemical solution or the like.

In the semiconductor manufacturing apparatus 101 of Patent Document 1 described above, the heat insulating cover 105 that covers the side surface of the lower portion of the inner tube 103 is provided between the inner tube 103 and the outer tube 104, so that it is not used for film formation on the semiconductor substrate 110. When the process gas (unreacted gas) passes between the inner tube 103 and the outer tube 104 and is discharged to the outside, it is possible to suppress the temperature of the process gas (unreacted gas) from decreasing. is there. Thereby, it is possible to suppress to some extent that the reaction product adheres to the lower part of the inner tube 103 and the outer tube 104 due to the process gas (unreacted gas).
JP-A-5-36609

  However, in the semiconductor manufacturing apparatus 101 of Patent Document 1 described above, process gas (unreacted gas) that has not been used for film formation on the semiconductor substrate 110 is discharged between the inner tube 103 and the outer tube 104 when discharged to the outside. , The process gas (unreacted gas) comes into contact with the outer surface of the inner tube 103 and the inner surface of the outer tube 104. For this reason, it is difficult to sufficiently suppress the reaction product from adhering to the outer tube 104, and there is a problem that the outer tube 104 needs to be periodically cleaned with a chemical solution or the like.

  When cleaning the outer tube 104, it is necessary to disassemble the outer tube 104 and the manifold 106 separately, so that there is a disadvantage that the cleaning operation becomes complicated.

  In addition, when cleaning is repeated with a chemical solution or the like, the thickness of the substrate boat 102, the inner tube 103, the outer tube 104, and the like is reduced by chemical attack. In particular, in the outer tube 104, when the inside is evacuated, the pressure difference (atmospheric pressure difference) between the inside and the outside of the outer tube 104 becomes large, so that there is a disadvantage that the outer tube 104 is damaged due to insufficient strength. Further, there is a disadvantage that the heater 107, the inner tube 103, and the like may be damaged as the outer tube 104 is damaged. For this reason, when cleaning the outer tube 104, there is an inconvenience that the thickness of the outer tube 104 needs to be managed.

  In addition, when cleaning with a chemical solution or the like is repeated, the sealing surface between the outer tube 104 and the manifold 106 is roughened due to chemical attack, so that the sealing performance between the outer tube 104 and the manifold 106 is lowered and it is difficult to vacuum. There is.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus that can eliminate the cleaning operation of the outer reaction tube.

  In order to achieve the above object, a semiconductor manufacturing apparatus according to one aspect of the present invention is disposed so as to cover a first inner reaction tube in which a semiconductor substrate is disposed, and an outer side of the first inner reaction tube, and a vacuum. An outer reaction tube having a flange attached to the lower portion thereof, and a second inner reaction tube disposed between the first inner reaction tube and the outer reaction tube and covering the side and upper side of the first inner reaction tube.

  In the semiconductor manufacturing apparatus according to this aspect, as described above, by providing the second inner reaction tube that covers the side and upper side of the first inner reaction tube between the first inner reaction tube and the outer reaction tube. The process gas (unreacted gas) that has not been used for film formation on the semiconductor substrate out of the process gas supplied into the first inner reaction tube can be prevented from coming into contact with the outer reaction tube. Thereby, since it can suppress that a reaction product adheres to an outer side reaction tube, the washing | cleaning operation | work of an outer side reaction tube can be eliminated.

  For this reason, since it is not necessary to decompose | disassemble an outer side reaction tube and a vacuum flange separately, it can suppress that a cleaning operation becomes complicated.

  In addition, since the thickness of the outer reaction tube is not reduced by washing, when the pressure difference (atmospheric pressure difference) between the inside and outside of the outer reaction tube increases by evacuating the inside of the outer reaction tube. However, the outer reaction tube is not damaged due to insufficient strength, and the first inner reaction tube and the second inner reaction tube are not damaged due to the outer reaction tube being damaged. Thereby, management of the thickness of the outer reaction tube can be eliminated, and the outer reaction tube can be used semipermanently.

  In addition, since the sealing surface between the outer reaction tube and the vacuum flange is not roughened by washing, it is possible to suppress the difficulty in evacuation due to a decrease in the sealing performance between the outer reaction tube and the vacuum flange.

  In the semiconductor manufacturing apparatus according to the above aspect, the process gas is preferably supplied into the first inner reaction tube, and the inert gas is supplied between the outer reaction tube and the second inner reaction tube. With this configuration, even when the process gas supplied to the inside of the first inner reaction tube flows between the first inner reaction tube and the second inner reaction tube, the inside and outside of the second inner reaction tube An increase in the pressure difference (atmospheric pressure difference) can be suppressed. Thereby, even when the thickness of the second inner reaction tube is reduced by washing, it is possible to easily suppress the second inner reaction tube from being damaged due to insufficient strength.

  In the semiconductor manufacturing apparatus for supplying a process gas into the first inner reaction tube and supplying an inert gas between the outer reaction tube and the second inner reaction tube, preferably, the second inner reaction tube includes A hole is provided for allowing an inert gas between the outer reaction tube and the second inner reaction tube to flow inside the second inner reaction tube. If comprised in this way, it can suppress more that the pressure difference (atmospheric pressure difference) of the inside of a 2nd inner side reaction tube and the exterior becomes large.

  In the semiconductor manufacturing apparatus in which a hole is provided in the second inner reaction tube, the gas pressure of the inert gas between the outer reaction tube and the second inner reaction tube is preferably within the second inner reaction tube. The magnitude is greater than the gas pressure. If comprised in this way, the process gas (unreacted gas) which was not used for the film-forming to a semiconductor substrate will be between an outer reaction tube and a 2nd inner reaction tube via the hole of a 2nd inner reaction tube. Flow can be suppressed. As a result, it is possible to easily prevent the process gas (unreacted gas) that has not been used for film formation on the semiconductor substrate from coming into contact with the outer reaction tube, so that the reaction product adheres to the outer reaction tube. Can be easily suppressed.

  In this case, preferably, an inert gas flow rate control unit for controlling the gas pressure of the inert gas between the outer reaction tube and the second inner reaction tube is further provided. With this configuration, it is possible to easily control the gas pressure of the inert gas between the outer reaction tube and the second inner reaction tube to be larger than the gas pressure inside the second inner reaction tube. it can.

  In the semiconductor manufacturing apparatus in which a hole is provided in the second inner reaction tube, preferably, an inert gas supplied between the outer reaction tube and the second inner reaction tube, and an inside of the first inner reaction tube. The supplied process gas passes between the first inner reaction tube and the second inner reaction tube and is discharged. If comprised in this way, since the density | concentration of the process gas (unreacted gas) which passes between between a 1st inner side reaction tube and a 2nd inner side reaction tube can be made low by inert gas, 1st inner side reaction It is possible to suppress the reaction product from adhering to the tube and the second inner reaction tube.

  In the semiconductor manufacturing apparatus in which the second inner reaction tube is provided with a hole, preferably, the first inner reaction tube has an upper end opened, and the second inner reaction tube has a hole formed in the first inner reaction tube. It is provided in a region below the upper end. If comprised in this way, the inert gas which flowed in the inside of the 2nd inner side reaction tube via the hole of the 2nd inner side reaction tube from between the outer side reaction tube and the 2nd inner side reaction tube will be in the 1st inner side reaction tube. It can suppress flowing inside. Thereby, since it can suppress that the process gas inside a 1st inner side reaction tube is disturb | confused, it can suppress that it forms into a semiconductor substrate unevenly.

  In this case, preferably, the process gas supplied into the first inner reaction tube passes between the first inner reaction tube and the second inner reaction tube from the upper side to the lower side and is discharged, The hole of the second inner reaction tube is provided in a region from the upper end of the first inner reaction tube to the lower side by 100 mm. According to this structure, the process gas (unreacted gas) is reduced in concentration by an inert gas, and the space between the first inner reaction tube and the second inner reaction tube is directed from the upper side to the lower side. Can be passed. Thereby, compared with the case where the hole of a 2nd inner side reaction tube is provided in the lower side, it can suppress more that a reaction product adheres to a 1st inner side reaction tube and a 2nd inner side reaction tube. .

  In the semiconductor manufacturing apparatus according to the above aspect, the first inner reaction tube and the second inner reaction tube are preferably configured to be removable without separately disassembling the outer reaction tube and the vacuum flange. If comprised in this way, when wash | cleaning a 1st inner side reaction tube, a 2nd inner side reaction tube, etc., a 1st inner side reaction tube and a 2nd inner side reaction tube will not decompose | disassemble an outer side reaction tube and a vacuum flange separately. Therefore, it is possible to easily prevent the cleaning operation from being complicated.

  In the semiconductor manufacturing apparatus according to the above aspect, it is preferable that the space between the outer reaction tube and the second inner reaction tube and the inside of the second inner reaction tube can be evacuated simultaneously. If comprised in this way, it can suppress easily that the pressure difference (atmospheric pressure difference) between the exterior and the inside of a 2nd inner side reaction tube becomes large. Thereby, even when the thickness of the second inner reaction tube is reduced by washing, it is possible to easily suppress the second inner reaction tube from being damaged due to insufficient strength.

  As described above, according to the present invention, it is possible to easily obtain a semiconductor manufacturing apparatus that can eliminate the operation of cleaning the outer reaction tube.

  FIG. 1 is a cross-sectional view illustrating the structure of a vertical CVD (Chemical Vapor Deposition) apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged sectional view showing the structure of the inner reaction tube of the vertical CVD apparatus shown in FIG. FIG. 3 is an enlarged cross-sectional view showing the structure around the vacuum flange of the vertical CVD apparatus shown in FIG. 4 to 6 are bottom views showing the structures of the vacuum flange and the base member of the vertical CVD apparatus shown in FIG. First, with reference to FIGS. 1-6, the structure of the vertical type CVD apparatus 1 by one Embodiment of this invention is demonstrated. The vertical CVD apparatus 1 is an example of the “semiconductor manufacturing apparatus” in the present invention.

  As shown in FIG. 1, a vertical CVD apparatus 1 according to an embodiment of the present invention includes a substrate boat 2 that supports a plurality of semiconductor substrates 50, inner reaction tubes 3 and 4 made of quartz, and an outer reaction made of quartz. A tube 5, a vacuum flange 6, a boat mounting table 7, and an annular heater 8 are provided. The inner reaction tube 3 is an example of the “first inner reaction tube” in the present invention, and the inner reaction tube 4 is an example of the “second inner reaction tube” in the present invention.

  The substrate boat 2 is configured to hold a plurality of semiconductor substrates 50 horizontally. In addition, the substrate boat 2 is disposed on the mounting portion 7 a of the boat mounting table 7.

  The inner reaction tube 3 has a cylindrical shape with an upper portion and a lower portion opened, and is configured such that the substrate boat 2 is disposed therein.

  The inner reaction tube 4 has a cylindrical shape with the upper part closed and the lower part opened.

  Here, in this embodiment, the inner reaction tube 4 is disposed between the inner reaction tube 3 and the outer reaction tube 5 so as to cover the side and upper side of the inner reaction tube 3. In addition, as shown in FIG. 2, a plurality of vent holes 4 a having a diameter of about 1 mm to about 3 mm are formed in a region A from the upper end of the inner reaction tube 3 of the inner reaction tube 4 to about 100 mm below. Yes. The vent hole 4a is an example of the “hole” in the present invention.

  In this embodiment, as will be described later, the inner reaction tubes 3 and 4 are configured to be detachable without disassembling the outer reaction tube 5 and the vacuum flange 6 separately.

  As shown in FIG. 1, the outer reaction tube 5 has a cylindrical shape with an upper portion closed and a lower portion opened. The outer reaction tube 5 is disposed so as to cover the side and upper side of the inner reaction tube 4.

  The vacuum flange 6 is attached to the bottom 5a (see FIG. 3) of the outer reaction tube 5. Specifically, as shown in FIG. 3, the pressing member 9 is fixed to the upper surface 6 a of the vacuum flange 6 by a plurality of screws 30 with the bottom 5 a of the outer reaction tube 5 being sandwiched therebetween, whereby the vacuum flange 6 is attached to the outer reaction tube 5. An annular recess 6b is formed on the upper surface 6a of the vacuum flange 6, and an O-ring 40 is attached to the recess 6b. Thereby, it is possible to seal between the upper surface 6 a of the vacuum flange 6 and the lower surface (seal surface) of the bottom 5 a of the outer reaction tube 5.

  Moreover, in this embodiment, the vacuum flange 6 has a cylindrical shape with an upper portion and a lower portion opened, and pedestal receiving portions 6c and 6d projecting inward are formed inside. The pedestal receiving portion 6 c is configured to support the pedestal member 10 that holds the inner reaction tube 3. The pedestal receiving portion 6 d is configured to support the pedestal member 11 that holds the inner reaction tube 4.

  Moreover, in this embodiment, as shown in FIG. 5, the three recessed parts 6e are formed in the base receiving part 6c. Further, as shown in FIG. 3, the pedestal receiving portion 6d is formed in the same shape as the pedestal receiving portion 6c, and the pedestal receiving portion 6d is also formed with three recessed portions 6f at the same positions as the three recessed portions 6e. Has been. Moreover, the base receiving parts 6c and 6d have the same inner diameter D1 (see FIG. 5).

  Further, as shown in FIG. 6, the base member 10 corresponds to the three concave portions 6e (see FIG. 5) of the base receiving portion 6c and the three concave portions 6f (see FIG. 3) of the base receiving portion 6d. In addition, three convex portions 10a are formed. Further, as shown in FIG. 3, the pedestal member 11 includes three recesses 6e corresponding to the pedestal receiving portion 6c and three recesses 6f corresponding to the pedestal receiving portion 6d. Convex part 11a is formed.

  In this embodiment, the inner diameter D2 (see FIG. 6) of the base member 10 is the same as the inner diameter of the inner reaction tube 3, and the inner diameter of the base member 11 is the same as the inner diameter of the inner reaction tube 4. It is. Further, the distance R1 (see FIG. 6) from the center of the base member 10 to the outer periphery of the convex portion 10a is the same as the distance from the center of the base member 11 to the outer periphery of the convex portion 11a.

  Also, as shown in FIGS. 3 and 4, the three convex portions 10a of the pedestal member 10 are arranged on the upper surface of the pedestal receiving portion 6c, so that the pedestal member 10 and the inner reaction tube 3 (see FIG. 3) are provided. It is supported by the vacuum flange 6. Further, as shown in FIG. 3, like the pedestal member 10 and the inner reaction tube 3, the three convex portions 11 a of the pedestal member 11 are arranged on the upper surface of the pedestal receiving portion 6 d, so that the pedestal member 11 and the inner reaction can be performed. The tube 4 is supported on the vacuum flange 6.

  Further, in the present embodiment, the inert gas passage portion 14 to which the inert gas valve 12 and the inert gas flow rate control portion 13 are attached, and the exhaust valve 15 are disposed above the pedestal receiving portion 6d of the vacuum flange 6. And an exhaust passage portion 16 to which is attached.

  Further, an exhaust passage portion 6g connected to an exhaust device (not shown) is formed in a portion between the base receiving portions 6c and 6d of the vacuum flange 6.

  In the present embodiment, the exhaust passage portion 16g is connected to the exhaust passage portion 6g. As a result, when the exhaust valve 15 is open, it is possible to evacuate both the inner reaction tube 3 and the inner reaction tube 4 and between the inner reaction tube 4 and the outer reaction tube 5 simultaneously. It is. On the other hand, when the exhaust valve 15 is closed, only the space between the inner reaction tube 3 and the inner reaction tube 4 can be evacuated.

  Further, a process gas passage portion 19 to which the process gas valve 17 and the process gas flow rate control portion 18 are attached is provided in a portion below the pedestal receiving portion 6 c of the vacuum flange 6.

  An annular recess 7c is formed on the upper surface of the bottom 7b of the boat mounting table 7, and an O-ring 41 is attached to the recess 7c. The upper surface of the bottom 7 b of the boat mounting table 7 is in contact with the lower surface of the vacuum flange 6. Thereby, it is possible to seal between the upper surface of the bottom 7b of the boat mounting table 7 and the lower surface of the vacuum flange 6.

  As shown in FIG. 1, the heater 8 is disposed on the side of the outer reaction tube 5 and has a function of uniformly heating the outer reaction tube 5.

  Next, with reference to FIGS. 1-6, the film-forming process using the vertical CVD apparatus 1 by one Embodiment of this invention is demonstrated.

  First, as shown in FIG. 3, the vacuum flange 6 is attached to the bottom 5 a of the outer reaction tube 5 using the pressing member 9 and the plurality of screws 30. Then, as shown in FIG. 1, the vacuum flange 6 is set so that the outer reaction tube 5 is positioned inside the heater 8. After that, as shown in FIG. 3, the inner reaction tube 4 disposed on the pedestal member 11 is inserted into the outer reaction tube 5 from the lower side of the vacuum flange 6. At this time, in a state where the three convex portions 11a of the pedestal member 11 are aligned with the positions of the three convex portions 6e of the pedestal receiving portion 6c of the vacuum flange 6 and the three convex portions 6f of the pedestal receiving portion 6d, 11 and the inner reaction tube 4 are moved upward. And by rotating the base member 11, the three convex parts 11a of the base member 11 are arrange | positioned on the upper surface of the base receiving part 6d.

  Thereafter, the inner reaction tube 3 disposed on the base member 10 is inserted into the inner reaction tube 4 and the outer reaction tube 5 from the lower side of the vacuum flange 6. At this time, in a state where the three convex portions 10a (see FIGS. 3 and 6) of the base member 10 are aligned with the positions of the three convex portions 6e (see FIGS. 3 and 5) of the base receiving portion 6c of the vacuum flange 6. The base member 10 and the inner reaction tube 3 are moved upward. And as shown in FIG. 4, by rotating the base member 10, the three convex parts 10a of the base member 10 are arrange | positioned on the upper surface of the base receiving part 6c.

  Thereafter, as shown in FIG. 1, the plurality of semiconductor substrates 50 are transferred to the substrate boat 2 disposed on the mounting portion 7 a of the boat mounting table 7. Then, the semiconductor substrate 50 and the substrate boat 2 are inserted into the inner reaction tube 3 from the lower side of the vacuum flange 6. At this time, as shown in FIG. 3, the upper surface of the bottom portion 7 b of the boat mounting table 7 is brought into contact with the lower surface of the vacuum flange 6. Thereby, the space between the upper surface of the bottom portion 7 b of the boat mounting table 7 and the lower surface of the vacuum flange 6 is sealed.

  At this time, the outer reaction tube 5 is uniformly heated at a predetermined temperature by the heater 8 (see FIG. 1).

  In this embodiment, the exhaust device (not shown) is driven while the exhaust valve 15 is opened, so that the reaction between the inner reaction tube 3 and the inner reaction tube 4 and between the inner reaction tube 4 and the outer reaction is performed. Both the tube 5 and the tube 5 are evacuated simultaneously.

Thereafter, the exhaust valve 15 is closed, and the exhaust device (not shown) is continuously driven, so that only the space between the inner reaction tube 3 and the inner reaction tube 4 is evacuated. Then, by opening the inert gas valve 12, an inert gas composed of N ₂ gas is supplied from the inert gas passage portion 14 between the inner reaction tube 4 and the outer reaction tube 5, and at the same time, the process gas valve 17 is turned on. By opening, the process gas is supplied from the process gas passage portion 19 into the inner reaction tube 3. As a result, the formation of a predetermined film on the plurality of semiconductor substrates 50 (see FIG. 1) is started.

  At this time, in this embodiment, the gas pressure between the inner reaction tube 4 and the outer reaction tube 5 is slightly larger than the gas pressure between the inner reaction tube 3 and the inner reaction tube 4, and the inner reaction is performed. The inert gas flow rate control unit 13 and the process gas flow rate control unit 18 are controlled so that the gas pressure in the pipe 3 becomes a predetermined magnitude.

  In this state, in this embodiment, as shown in FIG. 2, the process gas (unreacted gas) that is not used for film formation on the semiconductor substrate 50 among the process gases supplied to the inside of the inner reaction tube 3 is The flow from the upper end of the inner reaction tube 3 between the outer peripheral surface of the inner reaction tube 3 and the inner peripheral surface of the inner reaction tube 4 and between the outer peripheral surface of the inner reaction tube 3 and the inner peripheral surface of the inner reaction tube 4 Is discharged from the exhaust passage portion 6g (see FIG. 3) to the outside. In addition, the inert gas supplied between the inner reaction tube 4 and the outer reaction tube 5 flows from the plurality of vent holes 4 a of the inner reaction tube 4 to the outer peripheral surface of the inner reaction tube 3 and the inner peripheral surface of the inner reaction tube 4. Between the outer peripheral surface of the inner reaction tube 3 and the inner peripheral surface of the inner reaction tube 4 from the upper side to the lower side and discharged to the outside from the exhaust passage portion 6g (see FIG. 3). .

  When a predetermined film is formed on the semiconductor substrate 50 (see FIG. 1), the inert gas valve 12 and the process gas valve 17 (see FIG. 3) are closed, and then the exhaust device (not shown) is stopped. To do. Thereafter, the inside of the outer reaction tube 5 is returned to atmospheric pressure, and the substrate boat 2 and the semiconductor substrate 50 are taken out.

  As described above, the film forming process using the vertical CVD apparatus 1 is completed.

  In the film forming process using the vertical CVD apparatus 1 according to the present embodiment, the reaction is caused in the substrate boat 2 and the inner reaction tubes 3 and 4 by a process gas (unreacted gas) that is not used for film formation on the semiconductor substrate 50. Product adheres. For this reason, it is necessary to clean the substrate boat 2 and the inner reaction tubes 3 and 4 every time the above film forming process is performed several tens of times.

  When removing the inner reaction tube 3 for cleaning, by rotating the pedestal member 10 on which the inner reaction tube 3 is arranged, the three convex portions 10a of the pedestal member 10 are moved to the three pedestal receiving portions 6c of the vacuum flange 6. Align with the position of the recess 6e. Then, the base member 10 and the inner reaction tube 3 are removed by moving the base member 10 and the inner reaction tube 3 downward.

  Further, when removing the inner reaction tube 4 for cleaning, as in the case of removing the inner reaction tube 3, by rotating the pedestal member 11 on which the inner reaction tube 4 is arranged, the three convex portions 11a of the pedestal member 10 are rotated. Are aligned with the positions of the three recesses 6f of the base receiving part 6d of the vacuum flange 6. Then, the base member 11 and the inner reaction tube 4 are removed by moving the base member 11 and the inner reaction tube 4 downward.

  Thus, in this embodiment, it is possible to remove the inner reaction tubes 3 and 4 without disassembling the outer reaction tube 5 and the vacuum flange 6 separately.

  In the present embodiment, as described above, by providing the inner reaction tube 4 that covers the side and upper side of the inner reaction tube 3 between the inner reaction tube 3 and the outer reaction tube 5, the inside of the inner reaction tube 3. It is possible to prevent the process gas (unreacted gas) that has not been used for film formation on the semiconductor substrate 50 from contacting the outer reaction tube 5 from among the process gases supplied to. Thereby, since it can suppress that a reaction product adheres to the outer side reaction tube 5, the washing | cleaning operation | work of the outer side reaction tube 5 can be eliminated.

  For this reason, since it is not necessary to decompose | disassemble the outer side reaction tube 5 and the vacuum flange 6 separately, it can suppress that a cleaning operation becomes complicated.

  Further, since the thickness of the outer reaction tube 5 is not reduced by washing, the pressure difference (atmospheric pressure difference) between the inside and outside of the outer reaction tube 5 is increased by evacuating the inside of the outer reaction tube 5. In this case, the outer reaction tube 5 is not damaged due to insufficient strength, and the inner reaction tubes 3 and 4 and the heater 8 are not damaged when the outer reaction tube 5 is damaged. Thereby, management of the thickness of the outer reaction tube 5 can be eliminated, and the outer reaction tube 5 can be used semipermanently.

  Further, since the sealing surface (the lower surface of the bottom portion 5a) of the outer reaction tube 5 with the vacuum flange 6 is not roughened by cleaning, the sealing performance between the outer reaction tube 5 and the vacuum flange 6 is lowered and it is difficult to vacuum. Can be suppressed.

  In the present embodiment, when forming a film on the semiconductor substrate 50, a process gas is supplied into the inner reaction tube 3 and an inert gas is supplied between the inner reaction tube 4 and the outer reaction tube 5. As a result, an increase in the pressure difference (atmospheric pressure difference) between the inside and the outside of the inner reaction tube 4 can be suppressed. Thereby, even when the thickness of the inner reaction tube 4 is reduced by washing, it is possible to easily suppress the inner reaction tube 4 from being damaged due to insufficient strength.

  In the present embodiment, the inner reaction tube 4 is provided with a plurality of vent holes 4a for allowing the inert gas between the inner reaction tube 4 and the outer reaction tube 5 to flow inside the inner reaction tube 4. It is possible to further suppress an increase in the pressure difference (atmospheric pressure difference) between the inside and the outside of the inner reaction tube 4.

  In the present embodiment, the gas pressure of the inert gas between the inner reaction tube 4 and the outer reaction tube 5 is made slightly larger than the gas pressure inside the inner reaction tube 4, so that the semiconductor substrate 50 is formed. It is possible to prevent the process gas (unreacted gas) that has not been used for the film formation from flowing between the inner reaction tube 4 and the outer reaction tube 5 through the vent hole 4 a of the inner reaction tube 4. Thereby, it is possible to easily prevent the process gas (unreacted gas) that has not been used for film formation on the semiconductor substrate 50 from coming into contact with the outer reaction tube 5. Can be easily suppressed.

  In this embodiment, the inert gas flow rate control unit 13 for controlling the gas pressure of the inert gas between the inner reaction tube 4 and the outer reaction tube 5 is provided, so that the inner reaction tube 4 and the outer reaction are reacted. The gas pressure of the inert gas between the pipes 5 can be easily controlled to a magnitude equal to or higher than the gas pressure inside the inner reaction pipe 4.

  In the present embodiment, the inert gas supplied between the inner reaction tube 4 and the outer reaction tube 5 and the process gas supplied into the inner reaction tube 3 are combined with the inner reaction tube 3 and the inner reaction tube 3. By exhausting between the tube 4 and the exhaust gas, the concentration of the process gas (unreacted gas) passing between the inner reaction tube 3 and the inner reaction tube 4 can be reduced by the inert gas. The reaction product can be prevented from adhering to the inner reaction tube 3 and the inner reaction tube 4.

  In this embodiment, the inner reaction tube 4 is provided via the vent hole 4a of the inner reaction tube 4 by providing the vent hole 4a of the inner reaction tube 4 in the region A below the upper end of the inner reaction tube 3. It is possible to suppress the inert gas flowing into the inner reaction tube 3 from flowing into the inner reaction tube 3. Thereby, since it is possible to suppress the disorder of the process gas inside the inner reaction tube 3, it is possible to suppress the nonuniform film formation on the semiconductor substrate 50.

  Moreover, in this embodiment, the process gas (unreacted gas) is concentrated by the inert gas by providing the vent hole 4a of the inner reaction tube 4 in the region A from the upper end of the inner reaction tube 3 to 100 mm below. In a state where is lowered, the space between the inner reaction tube 3 and the inner reaction tube 4 can be passed from the upper side to the lower side. Thereby, compared with the case where the ventilation hole 4a of the inner side reaction tube 4 is provided in the lower side, it can suppress more that a reaction product adheres to the inner side reaction tube 3 and the inner side reaction tube 4. FIG.

  In the present embodiment, the inner reaction tube 3 and the inner reaction tube 4 are configured to be detachable without separately disassembling the outer reaction tube 5 and the vacuum flange 6, thereby allowing the inner reaction tube 3 and the inner reaction tube to be detachable. 4 can be cleaned without disassembling the outer reaction tube 5 and the vacuum flange 6 separately, so that the cleaning operation becomes complicated. It can be easily suppressed.

  Further, in the present embodiment, by configuring so that the space between the inner reaction tube 4 and the outer reaction tube 5 and the inside of the inner reaction tube 4 can be evacuated at the same time, An increase in pressure difference (atmospheric pressure difference) can be easily suppressed. Thereby, even when the thickness of the inner reaction tube 4 is reduced by washing, it is possible to easily suppress the inner reaction tube 4 from being damaged due to insufficient strength.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above-described embodiment, an example in which the present invention is applied to a vertical CVD apparatus has been described. However, the present invention is not limited thereto, and is applied to a semiconductor manufacturing apparatus such as a thermal diffusion apparatus other than the vertical CVD apparatus. May be.

  Moreover, although the example which provided the vent hole 4a in the inner side reaction tube 4 was shown in the said embodiment, this invention is not limited to this, The inner side reaction tube 4 does not need to provide the vent hole 4a. In this case, in order to suppress an increase in pressure difference (atmospheric pressure difference) between the inside and outside of the inner reaction tube 4, the inner reaction tube 4 and the outer reaction tube 5 are What is necessary is just to adjust the flow volume of the inert gas supplied between.

  In the above embodiment, the gas pressure between the inner reaction tube 4 and the outer reaction tube 5 is controlled to be slightly higher than the gas pressure between the inner reaction tube 3 and the inner reaction tube 4. However, the present invention is not limited to this, and the gas pressure between the inner reaction tube 4 and the outer reaction tube 5 is set to the same magnitude as the gas pressure between the inner reaction tube 3 and the inner reaction tube 4. You may control so that it may become.

  In the above embodiment, the example in which the diameter of the vent hole 4a of the inner reaction tube 4 is about 1 mm to about 3 mm is shown. However, the present invention is not limited to this, and the vent hole of the inner reaction tube 4 is used. The diameter of 4a may be smaller than about 1 mm or larger than about 3 mm.

It is sectional drawing which showed the structure of the vertical type CVD apparatus by one Embodiment of this invention. FIG. 2 is an enlarged cross-sectional view showing the structure of an inner reaction tube of the vertical CVD apparatus shown in FIG. It is the expanded sectional view which showed the structure of the vacuum flange periphery of the vertical type CVD apparatus shown in FIG. It is the bottom view which showed the attachment structure of the base member to the vacuum flange of the vertical type CVD apparatus shown in FIG. It is the bottom view which showed the structure of the vacuum flange of the vertical type CVD apparatus shown in FIG. It is the bottom view which showed the structure of the base member of the vertical type CVD apparatus shown in FIG. It is sectional drawing which showed the structure of the semiconductor manufacturing apparatus of patent document 1. FIG.

Explanation of symbols

1 Vertical CVD equipment (semiconductor manufacturing equipment)
3 inner reaction tube (first inner reaction tube)
4 inner reaction tube (second inner reaction tube)
4a Vent (hole)
5 Outer reaction tube 6 Vacuum flange 13 Inert gas flow controller 50 Semiconductor substrate

Claims (10)

A first inner reaction tube in which a semiconductor substrate is disposed;
An outer reaction tube disposed so as to cover the outside of the first inner reaction tube and having a vacuum flange attached to a lower portion thereof;
A semiconductor manufacturing apparatus comprising: a second inner reaction tube disposed between the first inner reaction tube and the outer reaction tube and covering a side and an upper side of the first inner reaction tube.   2. The semiconductor manufacturing method according to claim 1, wherein a process gas is supplied into the first inner reaction tube and an inert gas is supplied between the outer reaction tube and the second inner reaction tube. apparatus.   The second inner reaction tube is provided with a hole for allowing an inert gas between the outer reaction tube and the second inner reaction tube to flow inside the second inner reaction tube. The semiconductor manufacturing apparatus according to claim 2.   The gas pressure of the inert gas between the outer reaction tube and the second inner reaction tube is greater than or equal to the gas pressure inside the second inner reaction tube. Semiconductor manufacturing equipment.   5. The semiconductor manufacturing apparatus according to claim 4, further comprising an inert gas flow rate controller for controlling a gas pressure of an inert gas between the outer reaction tube and the second inner reaction tube.   The inert gas supplied between the outer reaction tube and the second inner reaction tube and the process gas supplied to the inside of the first inner reaction tube are the first inner reaction tube and the second inner gas. The semiconductor manufacturing apparatus according to any one of claims 3 to 5, wherein the semiconductor manufacturing apparatus is discharged through a space between the inner reaction tube and the inner reaction tube. The first inner reaction tube has an open top.
The semiconductor manufacturing apparatus according to claim 3, wherein the hole of the second inner reaction tube is provided in a region below the upper end of the first inner reaction tube. . The process gas supplied to the inside of the first inner reaction tube passes between the first inner reaction tube and the second inner reaction tube from the upper side to the lower side and is discharged,
The semiconductor manufacturing apparatus according to claim 7, wherein the hole of the second inner reaction tube is provided in a region from an upper end of the first inner reaction tube to a lower side of 100 mm.   The first inner reaction tube and the second inner reaction tube are configured to be detachable without separately disassembling the outer reaction tube and the vacuum flange. The semiconductor manufacturing apparatus of Claim 1.   The structure according to any one of claims 1 to 9, wherein a vacuum can be drawn between the outer reaction tube and the second inner reaction tube and the inside of the second inner reaction tube at the same time. The semiconductor manufacturing apparatus of Claim 1.

Images