JP2009053547A - Pattern forming method and material for forming coating film - Google Patents

Pattern forming method and material for forming coating film Download PDF

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JP2009053547A
JP2009053547A JP2007221629A JP2007221629A JP2009053547A JP 2009053547 A JP2009053547 A JP 2009053547A JP 2007221629 A JP2007221629 A JP 2007221629A JP 2007221629 A JP2007221629 A JP 2007221629A JP 2009053547 A JP2009053547 A JP 2009053547A
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group
pattern
coating film
resist
water
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Kiyoshi Ishikawa
Atsushi Sawano
Kazumasa Wakiya
敦 澤野
清 石川
和正 脇屋
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Tokyo Ohka Kogyo Co Ltd
東京応化工業株式会社
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Priority claimed from TW097130829A external-priority patent/TW200928592A/en
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Abstract

A novel pattern forming method capable of reducing the number of steps in a double patterning method, and a coating film forming material suitably used in the pattern forming method.
A step of applying a positive resist composition on a support 1 to form a resist film 2, and selectively exposing the resist film 2 through a mask pattern and developing the resist film 2 3, a step of forming a coating film 4 on the surface of the resist pattern 3 by using a coating film forming material made of a water-soluble resin composition, and a coating of the coating film 4. The resist pattern 5 is exposed and developed to form a pattern 5 made of the coating film 4 component, thereby forming a fine pattern.
[Selection] Figure 1

Description

  The present invention relates to a pattern forming method and a coating film forming material, and more specifically, a pattern forming method for forming a fine pattern using a coating film forming material made of a water-soluble resin composition, and the pattern formation. The present invention relates to a coating film forming material preferably used in the method.

  A technology (pattern formation technology) that forms a fine pattern on a substrate and processes the lower layer of the pattern by etching using this as a mask has been widely adopted for IC creation in the semiconductor industry, and has received great attention. ing.

  The fine pattern is usually made of an organic material, and is formed by a technique such as a lithography method or a nanoimprint method. For example, in a lithography method, a resist film made of a resist composition containing a base material component such as a resin is formed on a support such as a substrate, and a mask (mask) on which a predetermined pattern is formed is formed on the resist film. A process of forming a resist pattern having a predetermined shape on the resist film is performed by performing selective exposure with radiation such as light and electron beam via a pattern and developing the pattern. A resist composition in which the exposed portion changes to a property that dissolves in the developer is referred to as a positive type, and a resist composition that changes to a property in which the exposed portion does not dissolve in the developer is referred to as a negative type. And a semiconductor element etc. are manufactured through the process of processing a board | substrate by an etching using the said resist pattern as a mask.

In recent years, pattern miniaturization is rapidly progressing due to the advancement of lithography technology. As a technique for miniaturization, the wavelength of an exposure light source is generally shortened. Specifically, conventionally, ultraviolet rays typified by g-line and i-line have been used, but now mass production of semiconductor elements using KrF excimer laser or ArF excimer laser has been started. Lithography using an ArF excimer laser enables pattern formation with a resolution of 45 nm level. Further, in order to further improve the resolution, studies have been made on F 2 excimer lasers having a shorter wavelength than these excimer lasers, electron beams, EUV (extreme ultraviolet rays), X-rays, and the like.

  The resist composition is required to have lithography characteristics such as sensitivity to these exposure light sources and resolution capable of reproducing a pattern with fine dimensions. As a resist composition satisfying such requirements, a chemically amplified resist composition containing a base material component whose alkali solubility is changed by the action of an acid and an acid generator that generates an acid upon exposure is used. (See Patent Document 1). For example, a positive chemically amplified resist usually contains a resin whose alkali solubility is increased by the action of an acid as a base component, and when acid is generated from an acid generator by exposure at the time of resist pattern formation, The exposed part becomes alkali-soluble.

  As one of the techniques for further improving the resolution, exposure (immersion exposure) is performed by interposing a liquid (immersion medium) having a higher refractive index than air between the objective lens of the exposure machine and the sample. Lithographic methods to be performed, so-called liquid immersion lithography (hereinafter sometimes referred to as liquid immersion exposure) are known (see Non-Patent Document 1).

  According to immersion exposure, even when a light source having the same exposure wavelength is used, the same high resolution as when using a light source with a shorter wavelength or using a high NA lens can be achieved, and the depth of focus can be reduced. It is said that there is no decline. In addition, immersion exposure can be performed by applying an existing exposure apparatus. For this reason, immersion exposure is expected to be able to form resist patterns with low cost, high resolution, and excellent depth of focus. In particular, in terms of lithography characteristics such as resolution, the semiconductor industry is attracting a great deal of attention.

  Immersion exposure is effective in the formation of all pattern shapes, and can also be combined with super-resolution techniques such as the phase shift method and the modified illumination method that are currently under investigation. Currently, as an immersion exposure technique, a technique mainly using an ArF excimer laser as a light source is being actively researched. Currently, water is mainly studied as an immersion medium.

  Recently, as a newly proposed lithography technique, there is a double patterning method in which patterning is performed twice or more (see Non-Patent Documents 2 and 3). According to this double patterning method, a pattern finer than a pattern formed by one patterning can be formed. For example, Non-Patent Document 2 describes a method as shown in FIG.

  That is, first, as shown in FIG. 2A, a laminate in which a substrate 101, a lower layer film 102, and a hard mask 103 are laminated is prepared. Next, a resist film is provided on the hard mask 103, and the resist film is selectively exposed through a mask 105 and developed as shown in FIG. A resist pattern 104 having a plurality of trench patterns arranged at a pitch d is formed. Next, after the hard mask 103 is etched using the resist pattern 104 as a mask, the remaining resist pattern 104 is removed. As a result, as shown in FIG. 2C, a hard mask 103 'to which the resist pattern is transferred is obtained. Next, as shown in FIG. 2D, the position of the mask 105 is shifted, and a hard mask that fills the voids in the hard mask 103 ′ by applying a resist material onto the hard mask 103 ′. A resist film having a thickness greater than that of 103 ′ is formed. Then, the resist film is selectively exposed through the shifted mask 105 and developed to form a resist pattern 106. Next, after etching the hard mask 103 ′ using the resist pattern 106 as a mask, the remaining resist pattern 106 is removed. As a result, as shown in FIG. 2E, a hard mask 103 ″ to which a pattern in which a plurality of trench patterns with a space width d / 4 are arranged at a pitch d / 2 is transferred is obtained. By etching using “as a mask, the pattern of the hard mask 103” is transferred to the lower layer film 102, and a pattern 102 ′ having a half pitch of the used mask 105 is formed.

As described above, according to the double patterning method, it is possible to form a resist pattern with higher resolution even when using a light source having the same exposure wavelength or using the same resist composition. The double patterning method can be performed using an existing exposure apparatus.
JP 2003-241385 A OPTRONICS N0.4 (2003). Proceedings of SPIE, 5256, 985-994 (2003). Proceedings of SPIE, 6153, 615301-1-19 (2006).

  When the double patterning method is used, it is possible to form a resist pattern with high resolution, but due to the recent situation where further downsizing of electronic devices is required, higher resolution and finer resist pattern formation technology Is required.

  The present invention has been made in view of the above circumstances, and the object thereof is a novel pattern forming method for forming a finer pattern and a coating film forming method suitably used for the pattern forming method. To provide materials.

  The inventors of the present invention have made extensive studies to achieve the above object. As a result, a coating film is formed on the surface of the resist pattern using a coating film forming material made of a water-soluble resin composition, and the resist pattern coated with the coating film is exposed, developed, and removed, It has been found that a finer pattern can be formed by forming a pattern comprising the coating film component, and the present invention has been completed. More specifically, the present invention includes the following inventions.

  A first aspect of the present invention is a pattern forming method for forming a pattern on a support, the step of applying a positive resist composition on the support to form a resist film, and the resist film A step of selectively exposing through a mask pattern and developing to form a resist pattern, and a coating film is formed on the surface of the resist pattern using a coating film forming material made of a water-soluble resin composition And a step of exposing and developing the resist pattern coated with the coating film to form a pattern made of the coating film component.

  A second aspect of the present invention is a coating film forming material used in the pattern forming method described in the first aspect, and is composed of an aqueous solution containing at least a water-soluble resin and a water-soluble crosslinking agent. This is a coating film forming material.

  ADVANTAGE OF THE INVENTION According to this invention, the novel pattern formation method which can form a finer pattern, and the coating film forming material used suitably for this pattern formation method can be provided.

  An embodiment of the present invention will be described as follows. It should be noted that the present invention is not limited to the following embodiments.

<< 1. Pattern formation method >>
The pattern forming method of the present invention is a pattern forming method using a positive resist composition. As such a resist composition, a known positive resist composition that can be used by those skilled in the art at the time of carrying out the present invention can be used, and is not particularly limited. In particular, it is preferable to use a chemically amplified positive resist composition.

  The chemically amplified resist composition is not particularly limited, and is appropriately selected from a large number of chemically amplified resist compositions proposed as chemically amplified resist compositions according to the exposure light source used, lithography characteristics, and the like. Can be used.

  The chemically amplified resist composition includes a base material component (A) whose alkali solubility is changed by the action of an acid (hereinafter referred to as “component (A)”) and an acid generator component (B) which generates an acid upon exposure ( Hereinafter, the component (B) is generally dissolved in the organic solvent (S) (hereinafter referred to as the component (S)).

  Here, the “base material component” is an organic compound having a film forming ability, and an organic compound having a molecular weight of 500 or more is preferably used. When the molecular weight of the organic compound is 500 or more, the film forming ability is improved and a nano-level pattern is easily formed.

  The organic compound having a molecular weight of 500 or more is roughly classified into a low molecular weight organic compound having a molecular weight of 500 to 2000 (hereinafter referred to as a low molecular compound) and a high molecular weight resin having a molecular weight of more than 2000 (polymer). Is done. As the low molecular weight compound, a non-polymer is usually used. In the case of a resin (polymer), a polystyrene-reduced weight average molecular weight by GPC (gel permeation chromatography) is used as the “molecular weight”. Hereinafter, the term “resin” simply means a resin having a molecular weight of more than 2000.

  The component (A) may be a low molecular compound whose alkali solubility is changed by the action of an acid, a resin whose alkali solubility is changed by the action of an acid, or a mixture thereof. Good.

  As the component (A), organic compounds that are usually used as base material components for chemically amplified resists can be used singly or in combination of two or more. In the present specification, unless otherwise specified, a chemically amplified resist composition or a resist composition refers to a positive resist composition.

  As the component (A), a base material component having an acid dissociable, dissolution inhibiting group and increasing alkali solubility by the action of an acid is used. Such a positive resist composition is insoluble in alkali before exposure. When an acid is generated from the component (B) by exposure during resist pattern formation, the acid dissociable, dissolution inhibiting group is dissociated by the action of the acid, and (A ) The component changes to alkali-soluble. Therefore, in the formation of the resist pattern, when the resist film obtained by applying the positive resist composition on the substrate is selectively exposed, the exposed portion turns into alkali-soluble while the unexposed portion is alkali-insoluble. Since it remains unchanged, alkali development can be performed.

The component (A) of the positive resist composition only needs to have an acid dissociable, dissolution inhibiting group, and the following (A-1) component and / or (A-2) component are more preferable.
-(A-1) component: Resin which has an acid dissociable, dissolution inhibiting group.
Component (A-2): a low molecular compound having an acid dissociable, dissolution inhibiting group.

  Hereinafter, the preferable aspect of (A-1) component and (A-2) component is demonstrated more concretely.

[(A-1) component]
As the component (A-1), a resin having a structural unit having an acid dissociable, dissolution inhibiting group is preferable.

  The proportion of the structural unit having the acid dissociable, dissolution inhibiting group in the resin is preferably 20 to 80 mol% with respect to the total amount of all structural units constituting the resin. Is more preferable, and 30 to 60 mol% is more preferable.

  More specifically, as the component (A-1), a novolak resin having an acid dissociable, dissolution inhibiting group, a hydroxystyrene resin, a (α-lower alkyl) acrylic acid ester resin, a structural unit derived from hydroxystyrene; A copolymer resin containing a structural unit derived from an (α-lower alkyl) acrylate ester is preferably used.

In this specification, “(α-lower alkyl) acrylic acid” refers to one or both of acrylic acid (CH 2 ═CH—COOH) and α-lower alkylacrylic acid. α-Lower alkyl acrylic acid refers to one in which a hydrogen atom bonded to a carbon atom to which a carbonyl group in acrylic acid is bonded is substituted with a lower alkyl group. “(Α-Lower alkyl) acrylic acid ester” is an ester derivative of “(α-lower alkyl) acrylic acid” and represents one or both of acrylic acid ester and α-lower alkyl acrylic acid ester. The “structural unit derived from (α-lower alkyl) acrylic acid ester” is a structural unit formed by cleavage of an ethylenic double bond of (α-lower alkyl) acrylic acid ester. -Lower alkyl) acrylate structural unit. “(Α-Lower alkyl) acrylate” refers to one or both of acrylate and α-lower alkyl acrylate. The “structural unit derived from hydroxystyrene” is a structural unit formed by cleaving an ethylenic double bond of hydroxystyrene or α-lower alkylhydroxystyrene, and may hereinafter be referred to as a hydroxystyrene unit. “Α-lower alkylhydroxystyrene” indicates that the lower alkyl group is bonded to the carbon atom to which the phenyl group is bonded.

  In the “structural unit derived from an α-lower alkyl acrylate ester” and the “structural unit derived from an α-lower alkylhydroxystyrene”, the lower alkyl group bonded to the α-position has 1 to 5 carbon atoms. An alkyl group, preferably a linear or branched alkyl group, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group Etc. Industrially, a methyl group is preferable.

The resin component suitable as the component (A-1) is not particularly limited. For example, a unit having a phenolic hydroxyl group such as the following structural unit (a1), the following structural unit (a2), and the following configuration Resin component having a unit having at least one acid dissociable, dissolution inhibiting group selected from units (a3) and an alkali-insoluble unit such as the following structural unit (a4) used as necessary ( Hereinafter, it may be referred to as (A-11) component). In the component (A-11), cleavage occurs in the structural unit (a2) and / or the structural unit (a3) by the action of the acid generated from the acid generator upon exposure, and this initially causes the alkaline developer to In the resin which is insoluble to the resin, the alkali solubility is increased. As a result, a chemically amplified positive pattern can be formed by exposure and development.
..Structural unit (a1)
The structural unit (a1) is a unit having a phenolic hydroxyl group, and is preferably a unit derived from hydroxystyrene represented by the following general formula (1).

[In Formula (1), R shows a hydrogen atom or a lower alkyl group. ]
In formula (1), R is a hydrogen atom or a lower alkyl group. The lower alkyl group is as described above, and a hydrogen atom or a methyl group is particularly preferable. The description of R is the same below. The bonding position of —OH to the benzene ring is not particularly limited, but the position 4 (para position) described in the formula is preferred.

  The structural unit (a1) is preferably contained in an amount of 40 to 80 mol%, preferably 50 to 75 mol% in the component (A-11) from the viewpoint of forming a pattern. By setting it as 40 mol% or more, the solubility with respect to an alkali developing solution can be improved, and the improvement effect of a pattern shape is also acquired. The balance with other structural units can be taken by setting it as 80 mol% or less.

Moreover, from the point that a coating film is formed on the pattern, the structural unit (a1) is preferably contained in the component (A-11) in an amount of 50 mol% or more, more preferably 60 mol% or more. More preferably, it is 75 mol% or more. Although an upper limit is not specifically limited, It is 80 mol% or less. Within the above range, due to the presence of the phenolic hydroxyl group, a good coating film can be formed on the pattern, and a pattern with a good shape can be obtained. In addition, the adhesion between the pattern and the coating film is improved.
..Structural unit (a2)
The structural unit (a2) is a structural unit having an acid dissociable, dissolution inhibiting group, and is represented by the following general formula (2).

[In Formula (2), R is the same as the above, and X represents an acid dissociable, dissolution inhibiting group. ]
The acid dissociable, dissolution inhibiting group X is an alkyl group having a tertiary carbon atom, and the tertiary carbon atom of the tertiary alkyl group is bonded to the ester group [—C (O) O—]. Examples thereof include acid-dissolving dissolution inhibiting groups, cyclic acetal groups such as a tetrahydropyranyl group and a tetrahydrofuranyl group. As such an acid dissociable, dissolution inhibiting group X, for example, those other than the above can be arbitrarily used from among those used in a chemically amplified positive resist composition.

  Examples of the structural unit (a2) include those represented by the following general formula (3).

[In Formula (3), R is the same as above, and R 11 , R 12 and R 13 may each independently be a lower alkyl group (straight chain or branched chain. The number of carbon atoms is preferably 1 to 5). Is.) Alternatively, among R 11 , R 12 and R 13 , R 11 may be a lower alkyl group, and R 12 and R 13 may be bonded to form a monocyclic or polycyclic aliphatic cyclic group. . The aliphatic cyclic group preferably has 5 to 12 carbon atoms. ]
Here, “aliphatic” means that the group or compound does not have aromaticity, and “aliphatic cyclic group” means a monocyclic group or polycyclic group having no aromaticity. Means a group.

When R 11 , R 12 and R 13 do not have an aliphatic cyclic group, for example, it is preferable that R 11 , R 12 and R 13 are all methyl groups.

In the case where any of R 11 , R 12 and R 13 has an aliphatic cyclic group, when the aliphatic cyclic group is a monocyclic aliphatic cyclic group, as the structural unit (a2), for example, cyclopentyl And those having a cyclohexyl group are preferred.

  When the aliphatic cyclic group is a polycyclic alicyclic group, preferred examples of the structural unit (a2) include those represented by the following general formula (4).

[In Formula (4), R is the same as the above, and R 14 is a lower alkyl group (which may be linear or branched. The carbon number is preferably 1 to 5). ]
Moreover, what is represented by following General formula (5) as an acid dissociable, dissolution inhibiting group containing a polycyclic aliphatic cyclic group is also preferable.

[In Formula (5), R is the same as the above, and R 15 and R 16 may each independently be a lower alkyl group (either a straight chain or a branched chain. The number of carbon atoms is preferably 1 to 5. ). ]
The structural unit (a2) is contained in the component (A-11) in an amount of 5 to 50 mol%, preferably 10 to 40 mol%, more preferably 10 to 35 mol%.
..Structural unit (a3)
The structural unit (a3) is a structural unit having an acid dissociable, dissolution inhibiting group, and is represented by the following general formula (6).

[In Formula (6), R is the same as the above, and X ′ represents an acid dissociable, dissolution inhibiting group. ]
The acid dissociable, dissolution inhibiting group X ′ is a tertiary alkyloxycarbonyl group such as a tert-butyloxycarbonyl group or a tert-amyloxycarbonyl group; a tert-butyloxycarbonylmethyl group or a tert-butyloxycarbonylethyl group. Tertiary alkyloxycarbonylalkyl group; Tertiary alkyl group such as tert-butyl group and tert-amyl group; Cyclic acetal group such as tetrahydropyranyl group and tetrahydrofuranyl group; Alkoxy such as ethoxyethyl group and methoxypropyl group Such as an alkyl group.

  Of these, a tert-butyloxycarbonyl group, a tert-butyloxycarbonylmethyl group, a tert-butyl group, a tetrahydropyranyl group, and an ethoxyethyl group are preferable.

  As the acid dissociable, dissolution inhibiting group X ′, for example, those other than the above can be arbitrarily used from those used in the chemically amplified positive resist composition.

  In the general formula (6), the bonding position of the group (—OX ′) bonded to the benzene ring is not particularly limited, but the position 4 (para position) shown in the formula is preferable.

The structural unit (a3) is preferably contained in the component (A-11) in an amount of 5 to 50 mol%, preferably 10 to 40 mol%, more preferably 10 to 35 mol%.
..Structural unit (a4)
The structural unit (a4) is an alkali-insoluble structural unit and is represented by the following general formula (7).

[In Formula (7), R is the same as the above, R 4 ′ represents a lower alkyl group, and n ′ represents an integer of 0 to 3. ]
The lower alkyl group for R 4 ′ may be either a straight chain or a branched chain, and preferably has 1 to 5 carbon atoms. n ′ represents an integer of 0 to 3, and is preferably 0.

  The structural unit (a4) is 1 to 40 mol%, preferably 5 to 25 mol%, in the component (A-11). By setting it to 1 mol% or more, the effect of improving the shape (particularly, improving film loss) is enhanced, and by setting it to 40 mol% or less, it is possible to balance with other structural units.

  In the component (A-11), the structural unit (a1) and at least one structural unit selected from the structural unit (a2) and the structural unit (a3) are essential, and the structural unit (a4 ) May be included. In addition, a copolymer having all these structural units may be used, or a mixture of polymers having one or more of these structural units may be used. Or these may be combined.

  Further, the component (A-11) can optionally contain components other than the structural units (a1), (a2), (a3), and (a4), but the proportion of these structural units is 80 mol%. Above, preferably 90 mol% or more (100 mol% is most preferable).

  In particular, “any one of the copolymers having the structural units (a1) and (a3), or a mixture of two or more of the copolymers” or “structural units (a1), (a2), And an embodiment in which any one of the copolymers having (a4) or a mixture of two or more of the copolymers is used or mixed is most preferable because an effect can be easily obtained. Moreover, it is preferable also at the point of heat resistance improvement.

  In particular, a mixture of polyhydroxystyrene protected with a tertiary alkyloxycarbonyl group and polyhydroxystyrene protected with a 1-alkoxyalkyl group is preferred. When such mixing is performed, the mixing ratio (mass ratio) of each polymer (polyhydroxystyrene protected with a tertiary alkyloxycarbonyl group / 1-polyhydroxystyrene protected with 1-alkoxyalkyl group) is, for example, 1/9 to The ratio is 9/1, preferably 2/8 to 8/2, and more preferably 2/8 to 5/5.

  As a resin component other than the component (A-11) suitable as the component (A-1), an (α-lower alkyl) acrylic acid ester resin is included particularly in that a pattern with lower etching resistance can be formed. A resin component ((α-lower alkyl) acrylate resin) is preferable, and a resin component made of (α-lower alkyl) acrylate resin is more preferable.

  In the (α-lower alkyl) acrylate resin, a resin having a structural unit (a5) derived from an (α-lower alkyl) acrylate ester containing an acid dissociable, dissolution inhibiting group is preferable. The α-lower alkyl group is the same as described above.

  The acid dissociable, dissolution inhibiting group of the structural unit (a5) has an alkali dissolution inhibiting property that makes the entire component (A-12) before exposure insoluble in alkali, and at the same time, an action of an acid generated from the component (B) after exposure. Is a group that dissociates and changes the entire component (A-12) to alkali-soluble.

  In the (α-lower alkyl) acrylic ester resin component, when the acid dissociable, dissolution inhibiting group in the structural unit (a5) is dissociated by the acid generated from the component (B), a carboxylic acid is generated. Due to the presence of the generated carboxylic acid, the adhesion with the coating film formed on the resist pattern is improved.

  As the acid dissociable, dissolution inhibiting group, for example, a resin for resist composition of ArF excimer laser can be appropriately selected from those proposed in large numbers. In general, a group that forms a cyclic or chain tertiary alkyl ester with a carboxy group of (α-lower alkyl) acrylic acid, or a cyclic or chain alkoxyalkyl group is widely known.

  Here, the “group that forms a tertiary alkyl ester” is a group that forms an ester by substituting the hydrogen atom of the carboxy group of acrylic acid. That is, a structure in which the tertiary carbon atom of a chain-like or cyclic tertiary alkyl group is bonded to the oxygen atom at the terminal of the carbonyloxy group [—C (O) —O—] of the acrylate ester. . In this tertiary alkyl ester, when an acid acts, a bond is cut between an oxygen atom and a tertiary carbon atom.

  The tertiary alkyl group is an alkyl group having a tertiary carbon atom. Examples of the group that forms a chain-like tertiary alkyl ester include a tert-butyl group and a tert-amyl group. Examples of the group that forms a cyclic tertiary alkyl ester include those exemplified in the “acid dissociable, dissolution inhibiting group containing an alicyclic group” described later.

  A “cyclic or chain-like alkoxyalkyl group” forms an ester by substituting for a hydrogen atom of a carboxy group. That is, a structure is formed in which the alkoxyalkyl group is bonded to the terminal oxygen atom of the carbonyloxy group [—C (O) —O—] of the acrylate ester. In such a structure, the bond between the oxygen atom and the alkoxyalkyl group is broken by the action of an acid.

  Examples of such cyclic or chain alkoxyalkyl groups include 1-methoxymethyl group, 1-ethoxyethyl group, 1-isopropoxyethyl, 1-cyclohexyloxyethyl group, 2-adamantoxymethyl group, 1-methyladamant Examples thereof include a xymethyl group, a 4-oxo-2-adamantoxymethyl group, a 1-adamantoxyethyl group, and a 2-adamantoxyethyl group.

  As the structural unit (a5), a structural unit containing an acid dissociable, dissolution inhibiting group containing a cyclic group, particularly an aliphatic cyclic group, is preferred. Here, “aliphatic” and “aliphatic cyclic group” are as defined above.

  The aliphatic cyclic group may be monocyclic or polycyclic, and can be appropriately selected and used from among many proposed, for example, ArF resists. From the viewpoint of etching resistance, a polycyclic alicyclic group is preferred. The alicyclic group is preferably a hydrocarbon group, and particularly preferably a saturated hydrocarbon group (alicyclic group).

  Examples of the monocyclic alicyclic group include groups in which one hydrogen atom has been removed from a cycloalkane. Examples of the polycyclic alicyclic group include groups in which one hydrogen atom has been removed from bicycloalkane, tricycloalkane, tetracycloalkane and the like.

  Specifically, examples of the monocyclic alicyclic group include a cyclopentyl group and a cyclohexyl group. Examples of the polycyclic alicyclic group include groups in which one hydrogen atom has been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. Among these, an adamantyl group obtained by removing one hydrogen atom from adamantane, a norbornyl group obtained by removing one hydrogen atom from norbornane, a tricyclodecanyl group obtained by removing one hydrogen atom from tricyclodecane, and tetracyclo A tetracyclododecanyl group obtained by removing one hydrogen atom from dodecane is preferred industrially.

  More specifically, the structural unit (a5) is preferably at least one selected from the following general formulas (1 ′) to (3 ′). In addition, a unit derived from an (α-lower alkyl) acrylic acid ester having a cyclic alkoxyalkyl group as described above, specifically a 2-adamantoxymethyl group, 1-methyladamant Aliphatic polycyclic alkyloxy lower alkyl (α which may have a substituent such as xymethyl group, 4-oxo-2-adamantoxymethyl group, 1-adamantoxyethyl group, 2-adamantoxyethyl group, etc. -Lower alkyl) It is preferably at least one selected from units derived from acrylic acid esters.

[In the formula (1 ′), R is the same as above, and R 1 represents a lower alkyl group. ]

[In formula (2 ′), R is the same as above, and R 2 and R 3 each independently represent a lower alkyl group. ]

[In the formula (3 ′), R is the same as above, and R 4 represents a tertiary alkyl group. ]
In general formulas (1 ′) to (3 ′), the hydrogen atom or lower alkyl group represented by R is the same as described above for the hydrogen atom or lower alkyl group bonded to the α-position of the acrylate ester.

The lower alkyl group for R 1 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group. Group, pentyl group, isopentyl group, neopentyl group and the like. Among these, a methyl group and an ethyl group are preferable because they are easily available industrially.

The lower alkyl group for R 2 and R 3 is preferably each independently a linear or branched alkyl group having 1 to 5 carbon atoms. Among them, the case where R 2 and R 3 are both methyl groups is industrially preferable. Specific examples include structural units derived from 2- (1-adamantyl) -2-propyl acrylate.

R 4 is a chain-like tertiary alkyl group or a cyclic tertiary alkyl group. Examples of the chain-like tertiary alkyl group include a tert-butyl group and a tert-amyl group, and the tert-butyl group is industrially preferable. The cyclic tertiary alkyl group is the same as that exemplified in the aforementioned “acid dissociable, dissolution inhibiting group containing an aliphatic cyclic group”, and includes a 2-methyl-2-adamantyl group, 2-ethyl- Examples include 2-adamantyl group, 2- (1-adamantyl) -2-propyl group, 1-ethylcyclohexyl group, 1-ethylcyclopentyl group, 1-methylcyclohexyl group, 1-methylcyclopentyl group and the like.

Further, the group —COOR 4 may be bonded to the 3 or 4 position of the tetracyclododecanyl group shown in the formula, but the bonding position cannot be specified. Similarly, the carboxy group residue of the acrylate structural unit may be bonded to the position 8 or 9 shown in the formula.

  The structural unit (a5) can be used alone or in combination of two or more.

  In the (α-lower alkyl) acrylate resin component, the proportion of the structural unit (a5) is 20 to 60 mol% with respect to the total of all the structural units constituting the (α-lower alkyl) acrylate resin component. Is preferable, 30 to 50 mol% is more preferable, and 35 to 45 mol% is most preferable. A pattern can be obtained by setting it to the lower limit value or more, and balancing with other structural units can be achieved by setting it to the upper limit value or less.

  In addition to the structural unit (a5), the (α-lower alkyl) acrylic acid ester resin preferably further has a structural unit (a6) derived from an acrylate ester having a lactone ring. The structural unit (a6) is effective in increasing the adhesion of the resist film to the substrate and increasing the hydrophilicity with the developer. In addition, a coating film having high adhesion to the pattern can be formed.

  In the structural unit (a6), a lower alkyl group or a hydrogen atom is bonded to the α-position carbon atom. The lower alkyl group bonded to the α-position carbon atom is the same as described for the structural unit (a5), and is preferably a methyl group.

  Examples of the structural unit (a6) include a structural unit in which a monocyclic group consisting of a lactone ring or a polycyclic cyclic group having a lactone ring is bonded to the ester side chain portion of the acrylate ester. In this case, the lactone ring indicates one ring containing an —O—C (O) — structure, and this is counted as the first ring. Therefore, here, in the case of only a lactone ring, it is called a monocyclic group, and when it has another ring structure, it is called a polycyclic group regardless of the structure.

  Examples of the structural unit (a6) include a monocyclic group obtained by removing one hydrogen atom from γ-butyrolactone and a polycyclic group obtained by removing one hydrogen atom from a lactone ring-containing bicycloalkane. It is done.

  More specifically, the structural unit (a6) is preferably at least one selected from, for example, the following general formulas (4 ′) to (7 ′).

[In the formula (4 ′), R is the same as above, and R 5 and R 6 each independently represent a hydrogen atom or a lower alkyl group. ]

  [In the formula (5 '), R is the same as above, and m is 0 or 1. ]

  [In the formula (6 ′), R is the same as above. ]

[In the formula (7 ′), R is the same as above. ]
In general formula (4 ′), R 5 and R 6 each independently represents a hydrogen atom or a lower alkyl group, preferably a hydrogen atom. In R 5 and R 6 , the lower alkyl group is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, Examples include isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group and the like. Industrially, a methyl group is preferable.

Among the structural units represented by the general formulas (4 ′) to (7 ′), the structural unit represented by the general formula (4 ′) is inexpensive and industrially preferable, and is represented by the general formula (4 ′). Among the structural units, R is a methyl group, R 5 and R 6 are hydrogen atoms, and the position of the ester bond between the methacrylic acid ester and γ-butyrolactone is the α-position on the lactone ring, α-methacryloyloxy-γ -Butyrolactone is most preferred.

  The structural unit (a6) can be used alone or in combination of two or more.

  In the (α-lower alkyl) acrylate resin component, the proportion of the structural unit (a6) is 20 to 60 mol% with respect to the total of all the structural units constituting the (α-lower alkyl) acrylate resin component. Is preferable, 20-50 mol% is more preferable, and 30-45 mol% is the most preferable. Lithographic characteristics are improved by setting the value to the lower limit value or more, and balance with other structural units can be achieved by setting the upper limit value or less.

  In addition to the structural unit (a5) or in addition to the structural units (a5) and (a6), the (α-lower alkyl) acrylic acid ester resin component further includes acrylic acid containing a polar group-containing polycyclic group. It is preferable to have a structural unit (a7) derived from an ester. The structural unit (a7) increases the hydrophilicity of the entire (α-lower alkyl) acrylate resin component, increases the affinity with the developer, improves the alkali solubility in the exposed area, and improves the resolution. Contributes to improvement.

  In the structural unit (a7), a lower alkyl group or a hydrogen atom is bonded to the α-position carbon atom. The lower alkyl group bonded to the α-position carbon atom is the same as described for the structural unit (a5), and is preferably a methyl group. Examples of the polar group include a hydroxyl group, a cyano group, a carboxy group, and an amino group, and a hydroxyl group is particularly preferable. As the polycyclic group, among the aliphatic cyclic groups exemplified in the “acid dissociable, dissolution inhibiting group containing an aliphatic cyclic group” which is the aforementioned unit (a5), a polycyclic group is appropriately selected. Can be used.

  The structural unit (a7) is preferably at least one selected from the following general formulas (8 ′) to (9 ′).

[In formula (8 '), R is the same as the above, and n is an integer of 1-3. ]
R in the general formula (8 ′) is the same as R in the general formulas (1 ′) to (3 ′). Among these, those in which n is 1 and the hydroxyl group is bonded to the 3-position of the adamantyl group are preferable.

[In the formula (9 ′), R is the same as described above, and k is an integer of 1 to 3. ]
Among these, those in which k is 1 are preferable. Moreover, it is preferable that the cyano group has couple | bonded with 5th-position or 6th-position of the norbornanyl group.

  The structural unit (a7) can be used alone or in combination of two or more.

  In the (α-lower alkyl) acrylate resin component, the proportion of the structural unit (a7) is 10 to 50 mol% based on the total of all the structural units constituting the (α-lower alkyl) acrylate resin component. Is preferable, 15-40 mol% is more preferable, and 20-35 mol% is further more preferable. Lithographic characteristics are improved by setting the value to the lower limit value or more, and balance with other structural units can be achieved by setting the upper limit value or less.

  In the (α-lower alkyl) acrylate resin component, the total of these structural units (a5) to (a7) is preferably 70 to 100 mol% with respect to the total of all the structural units, 80 to More preferably, it is 100 mol%.

  The (α-lower alkyl) acrylic acid ester resin component may contain a structural unit (a8) other than the structural units (a5) to (a7). The structural unit (a8) is not particularly limited as long as it is another structural unit that is not classified into the structural units (a5) to (a7).

  For example, a structural unit containing a polycyclic aliphatic hydrocarbon group and derived from an (α-lower alkyl) acrylate is preferable. The polycyclic aliphatic hydrocarbon group is appropriately selected from, for example, polycyclic ones among the aliphatic cyclic groups exemplified in the aforementioned “acid dissociable, dissolution inhibiting group containing an aliphatic cyclic group”. Can be used. In particular, at least one selected from a tricyclodecanyl group, an adamantyl group, a tetracyclododecanyl group, a norbornyl group, and an isobornyl group is preferable in terms of industrial availability. The structural unit (a8) is most preferably an acid non-dissociable group.

  Specific examples of the structural unit (a8) include those having the following structures (10) to (12).

  [In Formula (10), R is the same as the above. ]

  [In Formula (11), R is the same as the above. ]

[In Formula (12), R is the same as the above. ]
When the structural unit (a8) is included, the proportion of the structural unit (a8) in the (α-lower alkyl) acrylate resin component is the sum of all the structural units constituting the (α-lower alkyl) acrylate resin component. 1 to 25 mol% is preferable, and 5 to 20 mol% is more preferable.

  The (α-lower alkyl) acrylate resin component is preferably a copolymer having at least the structural units (a5), (a6), and (a7). Examples of such a copolymer include a copolymer composed of the structural units (a5), (a6), and (a7), and the structural units (a5), (a6), (a7), and (a8). Examples of the copolymer are as follows.

  The component (A-11) can be obtained by polymerizing the monomer related to the structural unit by a known method. For example, the monomer related to each structural unit can be obtained by polymerizing by a known radical polymerization using a radical polymerization initiator such as azobisisobutyronitrile (AIBN).

  The component (A-1) is preferably 30000 or less, more preferably 20000 or less, and preferably 12000 or less, in terms of mass average molecular weight (polystyrene conversion mass average molecular weight by gel permeation chromatography, hereinafter the same). Further preferred. The lower limit may be more than 2000, and is preferably 4000 or more, and more preferably 5000 or more in terms of suppressing pattern collapse and improving resolution.

[(A-2) component]
As the component (A-2), a low molecular compound having a molecular weight of 500 or more and 2000 or less and having an acid dissociable, dissolution inhibiting group X or X ′ as exemplified in the description of the component (A-1) above. preferable. Specific examples include those in which some of the hydrogen atoms of the hydroxyl group of the compound having a plurality of phenol skeletons are substituted with the acid dissociable, dissolution inhibiting group X or X ′.

  The component (A-2) contains, for example, a part of the hydrogen atom of the hydroxyl group of a low molecular weight phenol compound known as a sensitizer or heat resistance improver for non-chemically amplified g-line or i-line resists. Those substituted with a dissociable, dissolution inhibiting group are preferred and can be arbitrarily used.

  Examples of such low molecular weight phenol compounds include the following.

  Bis (4-hydroxyphenyl) methane, bis (2,3,4-trihydroxyphenyl) methane, 2- (4-hydroxyphenyl) -2- (4′-hydroxyphenyl) propane, 2- (2,3,3) 4-trihydroxyphenyl) -2- (2 ′, 3 ′, 4′-trihydroxyphenyl) propane, tris (4-hydroxyphenyl) methane, bis (4-hydroxy-3,5-dimethylphenyl) -2- Hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3,4-dihydroxyphenylmethane, bis (4- Hydroxy-2,5-dimethylphenyl) -3,4-dihydroxyphenylmethane, bis (4-hydroxy-3-methyl) Phenyl) -3,4-dihydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxy-6-methylphenyl) -4-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxy-6-methylphenyl) -3 , 4-dihydroxyphenylmethane, 1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, phenol, m-cresol, p-cresol or xylenol And 2,3,4 nuclei of formalin condensates of phenols and the like. Of course, it is not limited to these.

The acid dissociable, dissolution inhibiting group is not particularly limited, and examples thereof include those described above.
<(B) component>
As the component (B), any conventionally known acid generator for chemically amplified resists can be appropriately selected and used. Examples of such acid generators include onium salt acid generators such as iodonium salts and sulfonium salts, oxime sulfonate acid generators, bisalkyl or bisarylsulfonyldiazomethanes, poly (bissulfonyl) diazomethanes, and the like. There are various known diazomethane acid generators, nitrobenzyl sulfonate acid generators, imino sulfonate acid generators, disulfone acid generators, and the like.

  Specific examples of the onium salt acid generator include diphenyliodonium trifluoromethanesulfonate, (4-methoxyphenyl) phenyliodonium trifluoromethanesulfonate, bis (p-tert-butylphenyl) iodonium trifluoromethanesulfonate, and triphenylsulfonium trifluoromethanesulfonate. (4-methoxyphenyl) diphenylsulfonium trifluoromethanesulfonate, (4-methylphenyl) diphenylsulfonium nonafluorobutanesulfonate, (p-tert-butylphenyl) diphenylsulfonium trifluoromethanesulfonate, diphenyliodonium nonafluorobutanesulfonate, bis (p -Tert-Butylphenyl) iodonium nonafluorobutans Honeto include triphenylsulfonium nonafluorobutanesulfonate. Among these, an onium salt having a fluorinated alkyl sulfonate ion as an anion is preferable.

  Examples of oxime sulfonate compounds include α- (methylsulfonyloxyimino) -phenylacetonitrile, α- (methylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (trifluoromethylsulfonyloxyimino) -phenylacetonitrile, α -(Trifluoromethylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (ethylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (propylsulfonyloxyimino) -p-methylphenylacetonitrile, α- (methyl Sulfonyloxyimino) -p-bromophenylacetonitrile and the like. Of these, α- (methylsulfonyloxyimino) -p-methoxyphenylacetonitrile is preferred.

  Specific examples of the diazomethane acid generator include bis (isopropylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (1,1-dimethylethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (2, 4-dimethylphenylsulfonyl) diazomethane and the like.

  As the component (B), one type of acid generator may be used alone, or two or more types may be used in combination.

(B) The usage-amount of a component shall be 1-20 mass parts with respect to 100 mass parts of (A) component, Preferably it is 2-10 mass parts. By setting it to be equal to or higher than the lower limit value of the above range, sufficient pattern formation is performed.
<Optional component>
The chemical amplification resist composition is further mixed with a nitrogen-containing organic compound (D) (hereinafter referred to as the component (D)) as an optional component in order to improve the pattern shape, stability over time, and the like. Can do. Since a wide variety of components (D) have been proposed, any known one may be used, but amines, particularly secondary lower aliphatic amines and tertiary lower aliphatic amines are preferred. .

  Here, the lower aliphatic amine refers to an alkyl or alkyl alcohol amine having 5 or less carbon atoms, and examples of the secondary or tertiary amine include trimethylamine, diethylamine, triethylamine, di-n-propylamine, Tri-n-propylamine, tripentylamine, diethanolamine, triethanolamine, triisopropanolamine and the like can be mentioned, and tertiary alkanolamines such as triethanolamine and triisopropanolamine are particularly preferable.

  These may be used alone or in combination of two or more.

  (D) component is normally used in 0.01-5.0 mass parts with respect to 100 mass parts of (A) component.

  In addition, in the chemically amplified resist composition, an organic carboxylic acid or an organic carboxylic acid is added as an optional component for the purpose of preventing sensitivity deterioration due to the blending with the component (D), and improving the pattern shape, retention stability, Phosphorus oxoacid or derivative thereof (E) (hereinafter referred to as component (E)) can be contained. In addition, (D) component and (E) component can also be used together, and any 1 type can also be used.

  As the organic carboxylic acid, for example, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are suitable.

  Phosphorus oxoacids or derivatives thereof include phosphoric acid, phosphoric acid di-n-butyl ester, phosphoric acid diphenyl ester and other phosphoric acid or derivatives thereof such as phosphonic acid, phosphonic acid dimethyl ester, phosphonic acid- Like phosphonic acids such as di-n-butyl ester, phenylphosphonic acid, phosphonic acid diphenyl ester, phosphonic acid dibenzyl ester and derivatives thereof, phosphinic acids such as phosphinic acid, phenylphosphinic acid and their esters Among these, phosphonic acid is particularly preferable.

  (E) A component is normally used in the ratio of 0.01-5.0 mass parts per 100 mass parts of (A) component.

  If desired, the chemically amplified resist composition may further contain miscible additives such as an additional resin for improving the performance of the coating film of the resist composition, a surfactant for improving the coating property, A dissolution inhibitor, a plasticizer, a stabilizer, a colorant, an antihalation agent and the like can be appropriately contained.

  The chemically amplified resist composition can be produced by dissolving the material in an organic solvent (S) (hereinafter referred to as “component (S)”). As the component (S), any component can be used as long as it can dissolve each component to be used to obtain a uniform solution. Conventionally, any one or two of known solvents for resist compositions can be used. More than one species can be appropriately selected and used.

  Specific examples include lactones such as γ-butyrolactone, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, 2-heptanone, ethylene glycol, ethylene glycol monoacetate, diethylene glycol, diethylene glycol monoacetate, propylene glycol, propylene glycol. Polyhydric alcohols such as monoacetate, propylene glycol monomethyl ether acetate (PGMEA), dipropylene glycol, or monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether of dipropylene glycol monoacetate and derivatives thereof; , Cyclic ethers such as dioxane, methyl lactate, ethyl lactate (EL), Methyl, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, may be mentioned methyl methoxypropionate, and esters such as ethyl ethoxypropionate. Among these, PGMEA, EL, and propylene glycol monomethyl ether (PGME) are preferable. These organic solvents may be used independently and may be used as 2 or more types of mixed solvents.

  The amount of the component (S) used is not particularly limited, but an amount that the chemically amplified resist composition becomes a liquid having a concentration that can be applied onto the support is used.

  The pattern forming method of the present invention is a pattern forming method for forming a pattern on a support, and a step of applying a positive resist composition on the support to form a resist film (hereinafter referred to as film forming step (hereinafter referred to as film forming step)). 1)), a step of selectively exposing the resist film through a mask pattern and developing it to form a resist pattern (hereinafter referred to as a patterning step (1)), and a surface of the resist pattern. A step of forming a coating film using a coating film forming material comprising a water-soluble resin composition (hereinafter referred to as a coating step), and exposing the resist pattern coated with the coating film, And developing to form a pattern made of the coating film component (hereinafter referred to as patterning step (2)).

  Hereinafter, a preferred embodiment of the pattern forming method of the present invention will be described with reference to FIG.

  In this embodiment, first, as shown in FIG. 1A, a chemically amplified positive resist composition is applied on a support 1 to form a resist film 2. Next, as shown in FIG. 1B, the resist film 2 is selectively exposed and developed to form a plurality of resist patterns 3. Next, as shown in FIG.1 (c), the coating film formation material 4a which consists of a water-soluble resin composition is apply | coated to the surface of the some resist pattern 3, respectively. The coating film forming material at this time is preferably applied with the same film thickness as the resist pattern 3 or a thin film thickness. Next, the coating film 4 is left only around the resist pattern 3 as shown in FIG. Next, as shown in FIG. 1 (e), the resist pattern 3 covered with the coating film 4 is exposed, developed, removed from the support 1, and a coating pattern 5 made of the coating film 4 is formed. Form.

  In this way, a pattern 5 (pattern 5 composed of the coating film 4 component) having a narrower pitch than the resist pattern 3 formed in the patterning step (1) is formed on the support 1.

  Hereinafter, each process will be described in more detail.

[Film Formation Step (1)]
The support 1 is not particularly limited, and a conventionally known one can be used. For example, a substrate for an electronic component or a substrate on which a predetermined wiring pattern is formed can be exemplified. More specifically, a silicon substrate, a metal substrate such as copper, chromium, iron, and aluminum, a glass substrate, and the like can be given. As a material for the wiring pattern, for example, copper, aluminum, nickel, gold or the like can be used.

  Further, the support 1 may be a substrate in which an inorganic and / or organic film is provided on the substrate as described above. An inorganic antireflection film (inorganic BARC) is an example of the inorganic film. Examples of the organic film include organic films such as an organic antireflection film (organic BARC) and a lower layer film in a multilayer resist method. In particular, it is preferable that a lower layer film is provided because a pattern with a high aspect ratio can be formed on the substrate, which is useful in the manufacture of semiconductors.

  Here, the multilayer resist method is a method in which at least one organic film (lower film) and at least one resist film are provided on a substrate, and the lower layer is patterned using the resist pattern formed on the upper resist film as a mask. It is said that a high aspect ratio pattern can be formed. In the multilayer resist method, basically, a method having a two-layer structure of an upper layer resist film and a lower layer film, and one or more intermediate layers (metal thin film, etc.) are provided between these resist film and lower layer film. It is divided into a method of providing a multilayer structure of three or more layers provided. According to the multilayer resist method, by securing a required thickness with the lower layer film, the resist film can be thinned and a fine pattern with a high aspect ratio can be formed.

  When the organic film is provided, the organic film is formed by, for example, applying an organic film forming material in which a resin component constituting the organic film is dissolved in an organic solvent to the substrate with a spinner or the like, preferably 200 to 300 ° C., preferably 30 It can be formed by baking treatment under heating conditions of ˜300 seconds, more preferably 60 to 180 seconds. The organic film forming material will be described later in detail.

  The thickness of the organic film is preferably 10 to 500 nm, more preferably 50 to 450 nm. By setting it within this range, there are effects that a pattern with a high aspect ratio can be formed and sufficient etching resistance can be ensured during substrate etching.

  There is no restriction | limiting in particular as a chemically amplified resist composition, It can select suitably from many chemically amplified resist compositions proposed as a chemically amplified resist composition as mentioned above.

  The resist film 2 can be formed by applying a chemically amplified resist composition on a support. The first chemically amplified resist composition can be applied by a conventionally known method using a spinner or the like.

  Specifically, for example, a chemically amplified resist composition is applied onto a support with a spinner or the like, and subjected to a baking treatment (pre-baking) for 40 to 120 seconds, preferably 60 to 90 seconds, at a temperature of 80 to 150 ° C. The resist film 2 can be formed by volatilizing the organic solvent.

  The thickness of the resist film 2 is preferably 50 to 500 nm, more preferably 50 to 450 nm. By setting it within this range, there are effects that a resist pattern can be formed with high resolution and sufficient resistance to etching can be obtained.

[Patterning process (1)]
The patterning step (1) can be performed using a conventionally known method. For example, the resist film 2 is selectively exposed through a mask (mask pattern) on which a predetermined pattern is formed. Bake treatment (PEB (post-exposure heating)) is applied for 40 to 120 seconds, preferably 60 to 90 seconds under a temperature condition of 0 ° C., for example, tetramethylammonium hydroxide (TMAH) having a concentration of 0.1 to 10% by mass When alkali development is performed with an aqueous solution, the exposed portion is removed and a resist pattern 3 is formed.

The wavelength used for exposure is not particularly limited, and includes KrF excimer laser, ArF excimer laser, F 2 excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron beam), X-ray, soft X-ray, etc. Can be done using radiation.

  At this time, the selective exposure of the resist film 2 may be normal exposure (dry exposure) performed in an inert gas such as air or nitrogen, or may be performed by immersion exposure.

  In immersion exposure, as described above, during exposure, a portion between a lens, which is conventionally filled with an inert gas such as air or nitrogen, and a resist film on the wafer is refracted larger than the refractive index of air. The exposure is performed in a state filled with a solvent having a high rate (immersion medium). More specifically, the immersion exposure is a solvent (immersion medium) having a refractive index larger than the refractive index of air between the resist film obtained as described above and the lowermost lens of the exposure apparatus. And in that state, exposure can be performed through a desired mask pattern (immersion exposure).

  As the immersion medium, a solvent having a refractive index larger than the refractive index of air and smaller than the refractive index of the resist film formed using the positive resist composition of the present invention is preferable. The refractive index of such a solvent is not particularly limited as long as it is within the above range.

  Examples of the solvent having a refractive index larger than the refractive index of air and smaller than the refractive index of the resist film include water, a fluorine-based inert liquid, a silicone-based solvent, and a hydrocarbon-based solvent.

Specific examples of the fluorine-based inert liquid, mainly composed of C 3 HC l2 F 5, C 4 F 9 OCH 3, C 4 F 9 OC 2 H 5, fluorine-based compounds such as C 5 H 3 F 7 A liquid etc. are mentioned, A thing with a boiling point of 70-180 degreeC is preferable, and a thing with 80-160 degreeC is more preferable. It is preferable that the fluorine-based inert liquid has a boiling point in the above range since the medium used for immersion can be removed by a simple method after the exposure is completed.

  As the fluorine-based inert liquid, a perfluoroalkyl compound in which all hydrogen atoms of the alkyl group are substituted with fluorine atoms is particularly preferable. Specific examples of the perfluoroalkyl compound include a perfluoroalkyl ether compound and a perfluoroalkylamine compound.

  More specifically, examples of the perfluoroalkyl ether compound include perfluoro (2-butyl-tetrahydrofuran) (boiling point: 102 ° C.). Examples of the perfluoroalkylamine compound include perfluorotributylamine ( Boiling point of 174 ° C.).

[Coating process]
Next, a coating film 4 is formed on the surfaces of the formed resist patterns 3 using a coating film forming material made of a water-soluble resin composition, thereby forming a plurality of coating patterns 5. At this time, it is preferable not to form a thick layer of the water-soluble resin composition on the upper surface of the resist pattern 3. That is, it is preferable to apply the coating film forming material so that the film thickness is the same as or thinner than that of the resist pattern 3.

  As a method for forming the coating film 4, a method using a coating film forming material containing an aqueous solution containing a water-soluble resin and a water-soluble crosslinking agent is preferably used. The coating film forming material will be described in detail in the coating film forming material of the present invention described later.

  When this coating film forming material is used, the coating film 4 is formed by, for example, applying the coating film forming material to the surface of the pattern to form a coating film, and then subjecting the coating film to baking. Can be formed. In addition, you may make it perform a prebaking process to a coating film for 30 second-about 180 second at the temperature of 80 to 180 degreeC before baking processing.

  As a coating method of the coating film forming material, a known method can be used. For example, a method of immersing the support 1 on which the resist pattern 3 is formed in the coating film forming material (dip coating method), Examples thereof include a method of applying a coating film forming material on the support 1 by a spin coating method.

  In the coating step, the coating film is baked after the coating film forming material is applied. By performing the baking treatment, the diffusion of the acid from the resist pattern 3 is promoted, and a crosslinking reaction occurs at the interface between the resist pattern 3 and the coating film. By this crosslinking reaction, the coating film 4 is formed on the surface of the resist pattern.

  In the baking treatment, the baking temperature is preferably 70 ° C to 180 ° C, more preferably 80 ° C to 170 ° C. By setting it within this range, a strong coating film 4 can be formed. The baking time is not particularly limited, but is preferably 30 seconds to 300 seconds, and more preferably 60 seconds to 180 seconds in consideration of the effect of baking treatment, the stability of the pattern shape, and the like.

  In the coating step, it is preferable to clean the surface of the support 1 with a cleaning liquid after the coating film forming material is applied. Thereby, even if excess water-soluble resin adheres to the surface of the support 1 where the resist film does not exist (non-patterned portion), it is washed away by the cleaning liquid or the concentration becomes very low. . On the other hand, the water-soluble resin on the surface of the resist pattern 3 remains as it is because it is crosslinked. As a result, the water-soluble resin film is sufficiently formed on the surface of the resist pattern 3, but the water-soluble resin film is not formed or hardly formed on the surface of the non-pattern part on the support 1, and high coating selectivity. Thus, a water-soluble resin film (coating film 4) can be formed on the surface of the resist pattern 3. Further, since the water-soluble resin hardly adheres to the upper surface of the resist pattern 3, the water-soluble resin film is hardly formed.

  Furthermore, by performing the cleaning, the coating film 4 is thin and uniform. That is, when washing is performed, excess water-soluble resin that is not cross-linked on the resist pattern 3 is removed, while the water-soluble resin strongly bonded to the pattern surface by cross-linking remains uniformly on the pattern surface. Therefore, a nanometer-level water-soluble resin thin film is formed with a uniform film thickness, extremely high accuracy, and high reproducibility.

  The cleaning liquid is not particularly limited as long as it can dissolve and remove an uncrosslinked water-soluble resin. For example, the same cleaning liquid as the solvent for the coating film forming material described later can be used.

  The cleaning can be performed using a known method. For example, after supplying the cleaning liquid to the surface of the coating film made of the coating film forming material by a spray method, the excess cleaning liquid is sucked under reduced pressure. Examples thereof include a method, a method of immersing and cleaning in a cleaning liquid, a method of spray cleaning, a method of steam cleaning, and a method of applying a cleaning liquid on a support by a spin coating method, and the spin coating method is particularly preferable. The cleaning conditions (cleaning time, amount of cleaning liquid used, etc.) may be appropriately set in consideration of the cleaning method and the like. For example, when cleaning is performed by a spin coating method, it may be appropriately adjusted within a range of about 100 to 5000 rpm and about 1 to 100 seconds.

  The washing is preferably performed before the solvent in the coating film made of the coating film forming material is completely volatilized. Whether the solvent is not completely volatilized can be confirmed visually.

  The thickness of the coating film 4 is preferably 0.1 nm or more, more preferably 0.5 to 50 nm, and further preferably 1 to 30 nm. By setting the thickness to 0.1 nm or more, there is an effect that sufficient resistance to etching, for example, dry etching such as oxygen plasma etching can be obtained.

[Patterning process (2)]
Next, the resist pattern 3 covered with the coating film 4 is exposed, developed, and removed from the support 1 to form a pattern 5 composed of the coating film 4 component. Thereby, a plurality of patterns 5 are formed on the support 1.

  Here, in this invention, although the resist pattern 3 is coat | covered with the coating film 4, it can be removed by alkali development by exposing. This exposure may be an overall exposure without using a mask. On the other hand, the coating film 4 formed (attached) on the side surface of the resist pattern 3 remains as it is after development. In the case where the coating film 4 is formed on the resist pattern 3, it is removed at the same time when the resist pattern 3 is removed by the development process. This is because the coating film formed on top of the resist pattern 3 is thin and has no resistance to alkali development.

  In this patterning step (2), a part of the resist pattern 3 may be selectively left without removing the entire resist pattern 3. In that case, a composite pattern of the resist pattern 3 and the pattern 5 made of the coating film 4 component is formed. Which resist pattern 3 is to be left can be set as appropriate according to its purpose and use, and is not particularly limited.

  For example, after forming a line-and-space pattern with a line width of 100 nm and line width: space width = 1: 3, the mask pattern is translated by 200 nm in the direction perpendicular to the line direction, and the line width is 100 nm and the line width: By forming a line and space pattern having a space width = 1: 3, a line and space pattern having a line width of 100 nm and a line width: space width = 1: 1 can be formed.

  Moreover, various composite patterns can be formed by rotating and moving the mask pattern used in the patterning step (1) or using a mask pattern different from the mask pattern used in the patterning step (1). .

  As a method other than the method of moving the mask pattern, a method of moving the stage (the stage on which the substrate is placed) in the exposure machine can also be used.

  In the pattern forming method of the present invention, after the patterning step (2), a series of operations of the film forming step (1), the patterning step (1), the covering step, and the patterning step (2) are repeated a plurality of times. You may go. That is, a resist composition is applied to the surface of the coating pattern 5 formed on the support 1 to form a resist film, the resist film is selectively exposed, developed to form a resist pattern, The operation of forming a coating film by using a coating film forming material made of an adhesive resin composition to form a coating pattern may be performed a plurality of times. Thereby, it is possible to form a pattern with a narrower pitch or to form a pattern with a complicated shape.

  In the pattern forming method of the present invention, after the patterning step (2), the support 1 may be etched using the formed coating pattern 5 (or composite pattern) as a mask. That is, when an organic film is provided on the substrate, the organic film can be etched, and a pattern (organic film pattern) faithful to the composite pattern can be formed on the organic film. The substrate can be etched using the composite pattern and the organic film pattern) as a mask. When the composite pattern is directly formed on the substrate, the substrate can be etched as it is using the composite pattern as a mask. Thus, a semiconductor device etc. can be manufactured by etching a board | substrate.

As a method for etching, a known method can be used. For example, dry etching is preferable for etching an organic film. In particular, oxygen plasma etching or etching using CF 4 gas or CHF 3 gas is preferable from the viewpoint of high resistance of the coating film to etching and production efficiency, and oxygen plasma etching is particularly preferable. Etching using a halogen gas is preferable for etching the substrate, etching using a fluorocarbon-based gas is preferable, and etching using CF 4 gas or CHF 3 gas is particularly preferable.

[Organic film forming material]
In the support 1 used in the above-described film forming step (1), the organic film forming material for forming the organic film that may be formed on the substrate is an electron beam or light like a resist film. Sensitivity is not necessarily required. In the manufacture of semiconductor elements and liquid crystal display elements, resists and resins that are generally used may be used.

  In addition, the organic film forming material is etched so that the organic film pattern can be formed by etching the organic film using the coating pattern coated with the coating film, thereby transferring the coating pattern to the organic film. In particular, a material capable of forming an organic film capable of dry etching is preferable. In particular, a material capable of forming an organic film that can be etched such as oxygen plasma etching is preferable.

  Such an organic film forming material may be a material conventionally used for forming an organic film such as an organic BARC. Examples include the ARC series manufactured by Brewer Science, the AR series manufactured by Rohm and Haas, and the SWK series manufactured by Tokyo Ohka Kogyo.

In particular, as described above, when oxygen plasma etching is used in the etching process, the organic film can be easily etched by oxygen plasma etching, and a fluorine gas such as halogen gas, specifically CF 4 gas or CHF 3 gas is used. It is preferable to use a material having a relatively high resistance to gas.

  Further, an organic film containing at least one resin component selected from the group consisting of novolak resin, acrylic resin and soluble polyimide may be formed between the organic BARC and the substrate.

  These materials are suitable for the present invention because they are easy to perform etching such as oxygen plasma etching and have high resistance to fluorocarbon gases. That is, in general, etching of a substrate or the like is performed using a halogen gas such as a fluorocarbon-based gas. Therefore, by forming an organic film from such a material, oxygen plasma etching is used when forming an organic film pattern. In addition to improving workability, etching resistance can be improved in a subsequent process using a halogen gas such as a fluorocarbon-based gas for etching a substrate or the like.

  These resin components may be used individually by 1 type, and 2 or more types may be mixed and used for them.

  Among the above, a novolak resin and an acrylic resin having an alicyclic moiety or an aromatic ring in the side chain are preferably used because they are inexpensive and widely used and have excellent resistance to dry etching using a fluorocarbon-based gas. Used.

  As the novolac resin, those generally used in positive resist compositions can be used, and i-line and g-line positive resists containing novolac resin as a main component can also be used.

  The novolac resin is a resin obtained by, for example, addition condensation of an aromatic compound having a phenolic hydroxyl group (hereinafter simply referred to as “phenols”) and an aldehyde under an acid catalyst.

  Examples of phenols include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p-butylphenol, 2, 3 -Xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol , P-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether, pyrogallol, phlorogricinol, hydroxydiphenyl, bisphenol A, gallic acid, gallic acid ester, α-naphthol, β-naphthol and the like.

  Examples of aldehydes include formaldehyde, furfural, benzaldehyde, nitrobenzaldehyde, acetaldehyde and the like.

  The catalyst for the addition condensation reaction is not particularly limited. For example, hydrochloric acid, nitric acid, sulfuric acid, formic acid, oxalic acid, acetic acid and the like are used as the acid catalyst.

  As the novolak resin, a commercially available product can be used.

  The lower limit of the mass average molecular weight (Mw) of the novolak resin is preferably 3000 or more, more preferably 5000 or more, more preferably 6000 or more, and further preferably 7000 or more. As an upper limit, 50000 or less is preferable, 30000 or less is more preferable, 10,000 or less is further more preferable, and 9000 or less is the most preferable.

  When Mw is 3000 or more, it is difficult to sublime when baked at a high temperature, and the apparatus is not easily contaminated. Further, it is preferable to set Mw to 5000 or more because etching resistance against a fluorocarbon-based gas is excellent. Further, when Mw is 50000 or less, good embedding characteristics with respect to a substrate having fine irregularities are excellent, and when it is 10,000 or less, dry etching tends to be easy, which is preferable.

  As the novolak resin, in particular, the content of low nuclei having a Mw of 5000 to 50000, preferably 8000 to 30000, and having a molecular weight of 500 or less, preferably 200 or less, is a gel permeation chromatography method. A novolac resin of 1% by mass or less, preferably 0.8% by mass or less is preferred. The content of the low nucleus is preferably as small as possible, and is desirably 0% by mass.

  In the novolak resin having Mw within the above range, the content of the low nucleus having a molecular weight of 500 or less is 1% by mass or less, so that the embedding property with respect to the substrate having fine irregularities is improved. Although the reason why the embedding property is improved by reducing the content of the low nuclei is not clear, it is presumed that the degree of dispersion becomes small.

  Here, the “low molecular weight body having a molecular weight of 500 or less” is detected as a low molecular fraction having a molecular weight of 500 or less when analyzed by GPC using polystyrene as a standard. “Low-nuclear bodies having a molecular weight of 500 or less” include monomers that have not been polymerized and those having a low degree of polymerization, such as those obtained by condensing 2-5 molecules of phenols with aldehydes, depending on the molecular weight. .

  The content (mass%) of the low-nuclear body having a molecular weight of 500 or less is graphed with the analysis result by the GPC method taking the fraction number on the horizontal axis and the concentration on the vertical axis. It is measured by determining the percentage (%) of the area under the curve of the low molecular fraction.

  As the acrylic resin, those generally used in positive resist compositions can be used. For example, a structural unit derived from a polymerizable compound having an ether bond and a polymerizable compound having a carboxy group can be used. Mention may be made of acrylic resins containing derived structural units.

  Examples of the polymerizable compound having an ether bond include 2-methoxyethyl (meth) acrylate, methoxytriethylene glycol (meth) acrylate, 3-methoxybutyl (meth) acrylate, ethyl carbitol (meth) acrylate, phenoxy polyethylene glycol (meta And (meth) acrylic acid derivatives having an ether bond and an ester bond such as acrylate, methoxypolypropylene glycol (meth) acrylate and tetrahydrofurfuryl (meth) acrylate. These compounds can be used alone or in combination of two or more. In the present specification, (meth) acrylate represents one or both of acrylate and methacrylate.

  Examples of the polymerizable compound having a carboxy group include monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid; 2-methacryloyloxyethyl succinic acid, and 2-methacryloyloxyethyl. Examples include maleic acid, 2-methacryloyloxyethyl phthalic acid, 2-methacryloyloxyethyl hexahydrophthalic acid and other compounds having a carboxy group and an ester bond, and acrylic acid and methacrylic acid are preferred. These compounds can be used alone or in combination of two or more.

  A soluble polyimide is a polyimide that can be made liquid by an organic solvent.

  The organic film-forming material further contains miscible additives as desired, for example, additional resins for improving the performance of organic films, surfactants for improving coating properties, dissolution inhibitors, plasticizers, Stabilizers, colorants, antihalation agents and the like can be appropriately contained.

  The organic film forming material can be produced by dissolving the above-described resin component and the like in an organic solvent. As an organic solvent, the thing similar to what was illustrated as (S) component of the chemically amplified resist composition mentioned above can be used.

Note that a hard mask layer made of a silicon-based material may be used between the resist film and the organic film.
≪2. Material for forming coating film >>
The material for forming a coating film of the present invention is composed of an aqueous solution containing a water-soluble resin and a water-soluble crosslinking agent, and is used for forming the coating film in the pattern forming method of the present invention. It is used for.
<Water-soluble resin>
The water-soluble resin that can be used for the coating film forming material of the present invention is not particularly limited as long as it is a resin that can be dissolved in water at room temperature. In the present invention, acrylic resin and vinyl resin are used. , A cellulose-based resin, an amide-based resin, and a polymer including a polymer containing an oxazoline group can be included.

  Examples of the acrylic resin include acrylic acid, methyl acrylate, methacrylic acid, methyl methacrylate, N, N-dimethylacrylamide, N, N-dimethylaminopropyl methacrylamide, N, N-dimethylaminopropylacrylamide, N- Examples thereof include polymers or copolymers containing monomers such as methyl acrylamide, diacetone acrylamide, N, N-dimethylaminoethyl methacrylate, N, N-diethylaminoethyl methacrylate, N, N-dimethylaminoethyl acrylate, and acryloylmorpholine.

  Examples of the vinyl-based resin include polymers or copolymers having monomers such as N-vinyl pyrrolidone, vinyl imidazolidinone, and vinyl acetate as constituent components.

  Examples of the cellulose resin include hydroxypropylmethylcellulose phthalate, hydroxypropylmethylcellulose acetate phthalate, hydroxypropylmethylcellulose hexahydrophthalate, hydroxypropylmethylcellulose acetate succinate, hydroxypropylmethylcellulose, hydroxypropylcellulose, hydroxyethylcellulose, cellulose acetate hexa Hydrophthalate, carboxymethylcellulose, ethylcellulose, methylcellulose and the like can be mentioned.

  Further, water-soluble amide resins can be used.

  Among these, vinyl resins are preferable, and polyvinyl pyrrolidone and polyvinyl alcohol are particularly preferable.

  The “polymer containing an oxazoline group” may be a polymer containing an oxazoline skeleton in the molecule, and the specific structure thereof is not particularly limited. For example, it includes not only a polymer of a monomer having an oxazoline skeleton but also a copolymer of a monomer having an oxazoline skeleton and a monomer not having an oxazoline skeleton. In the present specification, the “polymer” includes a dimer or higher oligomer.

  Examples of the “oxazoline skeleton” include 2-oxazoline represented by the following structural formula (13-1), 3-oxazoline represented by the structural formula (13-2), and 4-oxazoline represented by the structural formula (13-3). In addition, those substitution products are mentioned.

  Examples of the substituent include a hydrogen atom bonded to a carbon atom or a nitrogen atom of the oxazoline represented by the structural formula 13 as a substituted or unsubstituted lower alkyl group having 1 to 6 carbon atoms, a carboxyl group, a hydroxyl group, or a halogen group. Examples include substituted compounds. Examples of the substituted lower alkyl group include a hydroxyalkyl group and a (lower alkoxy) alkyl group, but are not limited to these examples.

  As the polymer containing an oxazoline group that can be used in the present invention, for example, a polymer having a structure represented by the following general formula (14) is particularly preferable.

  These water-soluble resins may be used alone or in combination of two or more.

The blending amount of the water-soluble resin is preferably about 1 to 99% by mass in the solid content of the coating film forming material, more preferably, in order to make the coating film necessary and sufficient in use. Is about 40-99 mass%, More preferably, it is about 65-99 mass%.
<Water-soluble crosslinking agent>
The water-soluble crosslinking agent has at least one nitrogen atom in its structure. As such a water-soluble crosslinking agent, a nitrogen-containing compound having an amino group and / or an imino group in which at least two hydrogen atoms are substituted with a hydroxyalkyl group and / or an alkoxyalkyl group is preferably used. Examples of these nitrogen-containing compounds include melamine derivatives, urea derivatives, guanamine derivatives, acetoguanamine derivatives, benzoguanamine derivatives, in which, for example, a hydrogen atom of an amino group is substituted with a methylol group or an alkoxymethyl group, or both. Examples thereof include succinylamide derivatives, glycoluril derivatives in which a hydrogen atom of an imino group is substituted, and ethylene urea derivatives.

  Among these nitrogen-containing compounds, a benzoguanamine derivative having an amino group or imino group in which at least two hydrogen atoms are substituted with a methylol group, a (lower alkoxy) methyl group, or both from the viewpoint of crosslinking reactivity One or more of triazine derivatives such as guanamine derivatives and melamine derivatives, glycoluril derivatives, and urea derivatives are preferable.

The blending amount of the water-soluble crosslinking agent is preferably about 1 to 99% by mass in the solid content of the coating film forming material, more preferably about 1 to 60% by mass, and still more preferably 1 to 35%. It is about mass%.
<Solvent>
The film-forming material of the present invention is usually used as an aqueous solution containing the above-described water-soluble resin and water-soluble crosslinking agent. The film-forming material is preferably used as an aqueous solution having a concentration of 3 to 50% by mass, and more preferably used as an aqueous solution having a concentration of 5 to 20% by mass. If the concentration is less than 3% by mass, the resist pattern may be poorly coated. On the other hand, if it exceeds 50% by mass, an improvement in the effect commensurate with the increase in concentration is not observed, which is not preferable from the viewpoint of handleability. .

In addition, as a solvent, the mixed solvent of water and alcohol solvent can also be used. Examples of alcohol solvents include methyl alcohol, ethyl alcohol, propyl alcohol, isopropyl alcohol, glycerin, ethylene glycol, propylene glycol, 1,2-butylene glycol, 1,3-butylene glycol, and 2,3-butylene glycol. Can be mentioned. These alcohol solvents are used by mixing up to 30% by mass with respect to water.
<Optional component>
In addition to the water-soluble resin and the water-soluble crosslinking agent, an optional component may be blended in the coating film forming material as follows.
-Surfactant A surfactant can be mix | blended with the material for film-film formation, for example. Although it does not specifically limit as surfactant, The property which is highly soluble with respect to the said water-soluble resin and does not generate | occur | produce a suspension is required. By using a surfactant that satisfies these characteristics, it is possible to suppress the generation of bubbles (microfoam), particularly when applying a coating film forming material. Can be prevented. In view of the above, one or more of N-alkylpyrrolidone surfactants, quaternary ammonium salt surfactants, polyoxyethylene phosphate ester surfactants, and nonium surfactants are preferably used. It is done.

  As the N-alkylpyrrolidone surfactant, those represented by the following general formula (15) are preferable.

[In the formula (15), R 20 represents an alkyl group having 6 or more carbon atoms]
Specific examples of such N-alkylpyrrolidone surfactants include N-hexyl-2-pyrrolidone, N-heptyl-2-pyrrolidone, N-octyl-2-pyrrolidone, N-nonyl-2-pyrrolidone, N -Decyl-2-pyrrolidone, N-decyl-2-pyrrolidone, N-undecyl-2-pyrrolidone, N-dodecyl-2-pyrrolidone, N-tridecyl-2-pyrrolidone, N-tetradecyl-2-pyrrolidone, N-pentadecyl -2-pyrrolidone, N-hexadecyl-2-pyrrolidone, N-heptadecyl-2-pyrrolidone, N-octadecyl-2-pyrrolidone and the like. Among these, N-octyl-2-pyrrolidone (“SURFADONE LP100”; manufactured by ISP) is preferably used.

  As the quaternary ammonium surfactant, those represented by the following general formula (16) are preferable.

[In the formula (16), R 21 , R 22 , R 23 , R 24 each independently represents an alkyl group or a hydroxyalkyl group (however, at least one of them represents an alkyl group or a hydroxy group having 6 or more carbon atoms) an alkyl group), X - represents a hydroxide ion or a halogen ion. ]
Specific examples of the quaternary ammonium surfactant include dodecyltrimethylammonium hydroxide, tridecyltrimethylammonium hydroxide, tetradecyltrimethylammonium hydroxide, pentadecyltrimethylammonium hydroxide, hexadecyltrimethylammonium hydroxide, Examples include heptadecyltrimethylammonium hydroxide and octadecyltrimethylammonium hydroxide. Of these, hexadecyltrimethylammonium hydroxide is preferably used.

  As the polyoxyethylene phosphate ester-based surfactant, those represented by the following general formula (17) are preferable.

[In formula (17), R 25 represents an alkyl group having 1 to 10 carbon atoms or an alkylallyl group, R 26 represents a hydrogen atom or (CH 2 CH 2 O) R 25 (R 25 is as defined above). X represents an integer of 1-20. ]
Specifically, such polyoxyethylene phosphate ester surfactants are commercially available as "Plisurf A212E", "Plysurf A210G" (all of which are manufactured by Daiichi Kogyo Seiyaku Co., Ltd.). A thing can be used suitably.

  The nonionic surfactant is preferably an alkyl etherified product of polyoxyalkylene or an alkylamine oxide compound.

  As the alkyl etherified product of polyoxyalkylene, a compound represented by the following general formula (18) or (19) is preferably used.

In the general formulas (18) and (19), R 27 and R 28 represent a linear, branched or cyclic alkyl group having 1 to 22 carbon atoms, an alkyl group having a hydroxyl group, or an alkylphenyl group. . A 0 is an oxyalkylene group, and is preferably at least one selected from oxyethylene, oxypropylene, and oxybutylene groups. y is an integer.

  As the alkylamine oxide compound, a compound represented by the following general formula (20) or (21) is preferably used.

In the general formulas (20) and (21), R 29 represents an alkyl group or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom, and p and q represent an integer of 1 to 5. .

  Examples of the alkylamine oxide compounds represented by the general formulas (20) and (21) include octyldimethylamine oxide, dodecyldimethylamine oxide, decyldimethylamine oxide, lauryldimethylamine oxide, cetyldimethylamine oxide, stearyldimethylamine oxide. , Isohexyl diethylamine oxide, nonyl diethylamine oxide, lauryl diethylamine oxide, isopentadecylmethylethylamine oxide, stearylmethylpropylamine oxide, lauryldi (hydroxyethyl) amine oxide, cetyldiethanolamine oxide, stearyldi (hydroxyethyl) amine oxide, dodecyloxy Ethoxyethoxyethyl di (methyl) amine oxide, stearyloxyethyl di ( Etc. chill) amine oxides.

  Among these surfactants, nonionic surfactants are preferably used particularly from the viewpoint of reducing defects.

  The blending amount of the surfactant is preferably about 0.1 to 10% by mass, more preferably about 0.2 to 2% by mass in the solid content of the coating film forming material. If the blending amount is out of the above range, there may be a problem that the coating property is deteriorated or a defect called microfoam, which is considered to be deeply related to bubbles generated during coating, is generated.

-Water-soluble fluorine compound You may mix | blend a water-soluble fluorine compound with the material for film film formation. Although it does not specifically limit as a water-soluble fluorine compound, The characteristic that it is highly soluble with respect to the said water-soluble resin and does not generate | occur | produce a suspension is required. By using a water-soluble fluorine compound that satisfies such characteristics, the leveling property (the degree of spread of the coating film forming material) can be improved. This leveling property can also be achieved by lowering the contact angle by adding a surfactant, but when the surfactant addition amount is excessive, not only a certain level of coating improvement is observed, When the amount is excessive, there is a problem that, when applied, air bubbles (microfoam) are generated on the coating film depending on the application conditions, which may cause defects. By blending this water-soluble fluorine compound, the contact angle can be lowered and the leveling property can be improved while suppressing such foaming.

  As such a water-soluble fluorine compound, fluoroalkyl alcohols, fluoroalkylcarboxylic acids and the like are preferably used. Examples of fluoroalkyl alcohols include 2-fluoro-1-ethanol, 2,2-difluoro-1-ethanol, trifluoroethanol, tetrafluoropropanol, and octafluoroamyl alcohol. Examples of the fluoroalkylcarboxylic acids include trifluoroacetic acid. However, it is not limited to these examples, and is not limited as long as it is a fluorinated material having water solubility and exhibits the above-described effects. In particular, fluoroalkyl alcohols having 6 or less carbon atoms are preferably used. Among these, trifluoroethanol is particularly preferable from the viewpoint of availability.

The blending amount of the water-soluble fluorine compound is preferably about 0.1 to 30% by mass, more preferably about 0.1 to 15% by mass in the solid content of the coating film forming material. If the amount is less than the above range, the applicability may be deteriorated. Moreover, when it mix | blends more than the said compounding quantity, the improvement of leveling property corresponding to a compounding quantity cannot be expected.
-Amide group-containing monomer An amide group-containing monomer may be blended in the film forming material. Although it does not specifically limit as an amide group containing monomer, The property of being highly soluble with respect to the said water-soluble resin and not generating suspension is required.

  As such an amide group-containing monomer, an amide compound represented by the following general formula (22) is preferably used.

In the general formula (22), R 30 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a hydroxyalkyl group, R 31 represents an alkyl group having 1 to 5 carbon atoms, and R 32 represents a hydrogen atom or A methyl group is shown, z shows the number of 0-5. In the above, the alkyl group and the hydroxyalkyl group include both linear and branched chains.

In the general formula (22), an amide group-containing monomer in which R 30 represents a hydrogen atom, a methyl group, or an ethyl group and z is 0 is more preferably used. Specific examples of the amide group-containing monomer include acrylamide, methacrylamide, N, N-dimethylacrylamide, N, N-dimethylmethacrylamide, N, N-diethylacrylamide, N, N-diethylmethacrylamide, N-methyl acrylamide, N-methyl methacrylamide, N-ethyl acrylamide, N-ethyl methacrylamide, etc. are mentioned. Of these, acrylamide and methacrylamide are particularly preferable.

  The blending amount of the amide group-containing monomer is preferably about 0.1 to 30% by mass, more preferably about 1 to 15% by mass in the solid content of the coating film forming material. If it is less than 0.1% by mass, it is difficult to obtain a desired effect. On the other hand, if it exceeds 30% by mass, an improvement in the effect commensurate with the blending amount cannot be obtained.

-Heterocyclic compound having at least oxygen atom and / or nitrogen atom A heterocyclic compound having at least oxygen atom and / or nitrogen atom may be blended in the material for forming a coating film.

  As such a heterocyclic compound, at least one selected from a compound having an oxazolidine skeleton, a compound having an oxazoline skeleton, a compound having an oxazolidone skeleton, and a compound having an oxazolidinone skeleton is preferably used.

  As the compound having an oxazolidine skeleton, in addition to the oxazoline represented by the following structural formula (23), a substituted product thereof may be mentioned.

  As the substituent, the hydrogen atom bonded to the carbon atom or nitrogen atom of the oxazoline represented by the structural formula (23) is a substituted or unsubstituted lower alkyl group having 1 to 6 carbon atoms, a carboxyl group, a hydroxyl group, a halogen atom. And compounds substituted with a group. Examples of the substituted lower alkyl group include a hydroxyalkyl group and a (lower alkoxy) alkyl group, but are not limited to these examples.

  Examples of the compound having an oxazoline skeleton include 2-oxazoline represented by the following structural formula (24-1), 3-oxazoline represented by the structural formula (24-2), and 4-oxazoline represented by the structural formula (24-3). In addition to these, the substitution products thereof may be mentioned.

  As the substituent, a hydrogen atom bonded to a carbon atom or a nitrogen atom of the compound having an oxazoline skeleton represented by the above structural formulas (24-1) to (24-3) is substituted or unsubstituted with 1 to 6 carbon atoms. Examples thereof include compounds substituted with a substituted lower alkyl group, carboxyl group, hydroxyl group or halogen group. Examples of the substituted lower alkyl group include a hydroxyalkyl group and a (lower alkoxy) alkyl group, but are not limited to these examples.

  Among the compounds having the oxazoline skeleton, 2-methyl 2-oxazoline represented by the following structural formula (24-1-A) is preferably used.

  Examples of the compound having an oxazolidone skeleton include 5 (4) -oxazolone represented by the following structural formula (25-1), 5 (2) -oxazolone represented by the following structural formula (25-2), and the following structural formula (25- In addition to 4 (5) -oxazolone represented by 3), 2 (5) -oxazolone represented by the following structural formula (25-4), 2 (3) -oxazolone represented by the following structural formula (25-5), Those substitutes are mentioned.

  As the substituent, a hydrogen atom bonded to a carbon atom or a nitrogen atom of the compound having an oxazolidone skeleton represented by the above structural formulas (25-1) to (25-5) is substituted or unsubstituted with 1 to 6 carbon atoms. Examples thereof include compounds substituted with a substituted lower alkyl group, carboxyl group, hydroxyl group or halogen group. Examples of the substituted lower alkyl group include a hydroxyalkyl group and a (lower alkoxy) alkyl group, but are not limited to these examples.

  Examples of the compound having an oxazolidinone skeleton (or a compound having a 2-oxazolidone skeleton) include an oxazolidinone (or 2-oxazolidone) represented by the following structural formula (26) and a substituted product thereof.

  As the substituent, a hydrogen atom bonded to a carbon atom or a nitrogen atom of the oxazolidinone (or 2-oxazolidone) represented by the structural formula (26) is a substituted or unsubstituted lower alkyl group having 1 to 6 carbon atoms, Examples thereof include compounds substituted with a carboxyl group, a hydroxyl group, and a halogen group. Examples of the substituted lower alkyl group include a hydroxyalkyl group and a (lower alkoxy) alkyl group, but are not limited to these examples.

  Among the compounds having the oxazolidinone skeleton, 3-methyl-2-oxazolidone represented by the following structural formula (26-1) is preferably used.

  The blending amount of the heterocyclic compound having at least an oxygen atom and / or a nitrogen atom is preferably 1 to 50% by mass, and more preferably 3 to 20% by mass with respect to the water-soluble resin. If it is less than 1% by mass, it is difficult to obtain a desired effect. On the other hand, if it exceeds 50% by mass, an improvement in the effect commensurate with the blending amount cannot be obtained.

-Heterocyclic compound having at least two nitrogen atoms in at least one ring The heterocyclic film having at least two nitrogen atoms in at least one ring may be blended with the material for forming a coating film.

  Such heterocyclic compounds include pyrazole, 3,5-dimethylpyrazole, 2-pyrazoline, 5-pyrazolone, 3-methyl-1-phenyl-5-pyrazolone, 2,3-dimethyl-1-phenyl-5-pyrazolone. , 2,3-dimethyl-4-dimethylamino-1-phenyl-5-pyrazolone, pyrazole compounds such as benzopyrazole; imidazole, methylimidazole, 2,4,5-triphenylimidazole, 4- (2-aminoethyl) ) Imidazole compounds such as imidazole and 2-amino-3- (4-imidazolyl) propionic acid; 2-imidazoline, 2,4,5-triphenyl-2-imidazoline, 2- (1-naphthylmethyl) -2- Imidazoline compounds such as imidazoline; imidazolidine, 2-imidazolidone, 2,4- Imidazolidinedione, 1-methyl-2,4-imidazolidinedione, 5-methyl-2,4-imidazolidinedione, 5-hydroxy-2,4-imidazolidinedione-5-carboxylic acid, 5-ureido- Imidazolidine compounds such as 2,4-imidazolidinedione, 2-imino-1-methyl-4-imidazolidone, 2-thioxo-4-imidazolidone; benzimidazole, 2-phenylbenzimidazole, 2-benzimidazolinone, etc. Benzimidazole compounds; 1,2-diazine, 1,3-diazine, 1,4-diazine, 2,5-dimethylpyrazine and other diazine compounds; 2,4 (1H, 3H) pyrimidinedione, 5-methyluracil 5-ethyl-5-phenyl-4,6-perhydropyrimidinedione, 2-thioxo-4 Hydropyrimidine compounds such as 1H, 3H) -pyrimidinone, 4-imino-2 (1H, 3H) -pyrimidine, 2,4,6 (1H, 3H, 5H) -pyrimidinetrione; cinnoline, phthalazine, quinazoline, quinoxaline, Benzodiazine compounds such as luminol; dibenzodiazine compounds such as benzocinoline, phenazine, and 5,10-dihydrophenazine; 1H-1,2,3-triazole, 1H-1,2,4-triazole, 4-amino-1 Triazole compounds such as 1,2,4-triazole; Benzotriazole compounds such as benzotriazole and 5-methylbenzotriazole; 1,3,5-triazine, 1,3,5-triazine-2,4,6-triol 2,4,6-trimethoxy-1,3,5-triazine, 1, Triazines such as 3,5-triazine-2,4,6-trithiol, 1,3,5-triazine-2,4,6-triamine, 4,6-diamino-1,3,5-triazin-2-ol System compounds, and the like, but are not limited to these examples.

  Among these, from the viewpoint of easy handling and availability, imidazole compound monomers are preferably used, and imidazole is particularly preferably used.

  The blending amount of the heterocyclic compound having at least two nitrogen atoms in the same ring is preferably about 1 to 15% by mass, more preferably about 2 to 10% by mass with respect to the water-soluble resin. It is. If it is less than 1% by mass, it is difficult to obtain a desired effect. On the other hand, if it exceeds 15% by mass, it is difficult to obtain a desired effect, and at the same time, the risk of occurrence of defects increases.

-Water-soluble amine compound You may mix | blend a water-soluble amine compound with the material for film film formation. By using such a water-soluble amine compound, it is possible to prevent the generation of impurities and adjust the pH.

  Examples of the water-soluble amine compound include amines having a pKa (acid dissociation constant) of 7.5 to 13 in an aqueous solution at 25 ° C. Specifically, for example, monoethanolamine, diethanolamine, triethanolamine, 2- (2-aminoethoxy) ethanol, N, N-dimethylethanolamine, N, N-diethylethanolamine, N, N-dibutylethanolamine , Alkanolamines such as N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, monoisopropanolamine, diisopropanolamine, triisopropanolamine; diethylenetriamine, triethylenetetramine, propylenediamine, N, N-diethylethylenediamine, 1,4-butanediamine, N-ethyl-ethylenediamine, 1,2-propanediamine, 1,3-propanediamine, 1,6-hexa Polyalkylene polyamines such as diamine; aliphatic amines such as 2-ethyl-hexylamine, dioctylamine, tributylamine, tripropylamine, triallylamine, heptylamine, cyclohexylamine; aromatic amines such as benzylamine and diphenylamine Cyclic amines such as piperazine, N-methyl-piperazine, and hydroxyethylpiperazine; Among them, those having a boiling point of 140 ° C. or higher (760 mmHg) are preferable, and for example, monoethanolamine, triethanolamine and the like are preferably used.

  The blending amount of the water-soluble amine compound is preferably about 0.1 to 30% by mass, more preferably about 2 to 15% by mass in the solid content of the coating film forming material. If the amount is less than 0.1% by mass, the liquid may be deteriorated with time. On the other hand, if it exceeds 30% by mass, the shape of the resist pattern may be deteriorated.

-Non-amine water-soluble organic solvent A non-amine-based water-soluble organic solvent may be blended with the film forming material. By using such a non-amine water-soluble organic solvent, the occurrence of defects can be suppressed.

  Such a non-amine water-soluble organic solvent may be any non-amine organic solvent miscible with water, for example, sulfoxides such as dimethyl sulfoxide; dimethyl sulfone, diethyl sulfone, bis (2-hydroxyethyl) sulfone, Sulfones such as tetramethylene sulfone; Amides such as N, N-dimethylformamide, N-methylformamide, N, N-dimethylacetamide, N-methylacetamide, N, N-diethylacetamide; N-methyl-2-pyrrolidone Lactams such as N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-hydroxymethyl-2-pyrrolidone and N-hydroxyethyl-2-pyrrolidone; 1,3-dimethyl-2-imidazolidinone 1,3-diethyl-2-imidazolidinone, 1,3 Imidazolidinones such as diisopropyl-2-imidazolidinone; ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol, diethylene glycol monomethyl Polyhydric alcohols such as ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol, propylene glycol monomethyl ether, glycerin, 1,2-butylene glycol, 1,3-butylene glycol, 2,3-butylene glycol and their derivatives Is mentioned. Of these, polyhydric alcohols and derivatives thereof are preferable from the viewpoint of defect generation suppression, and glycerin is particularly preferable. One or more non-amine water-soluble organic solvents can be used.

  The blending amount of the non-amine water-soluble organic solvent is preferably about 0.1 to 30% by mass, and more preferably about 0.5 to 15% by mass with respect to the water-soluble resin. If the amount is less than 0.1% by mass, the defect reduction effect tends to be low. On the other hand, if the amount exceeds 30% by mass, a mixing layer tends to be formed between the resist pattern, which is not preferable.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, of course, this invention is not limited to these Examples.

[Example 1]
An ArF resist composition “TArF-P6111” (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is spin-coated on an 8-inch silicon substrate and prebaked (PAB) at 140 ° C. for 60 seconds to form a film. A resist film having a thickness of 243 nm was formed. Next, this resist film was selectively applied through a mask having a line width of 250 nm and a pitch of 750 nm using a KrF excimer laser exposure machine NSR-S203 (manufactured by Nikon, NA = 0.68, σ = 0.75). Exposed. Next, after baking (PEB) was performed at 140 ° C. for 60 seconds, development was performed for 30 seconds using an aqueous 2.38 mass% tetramethylammonium hydroxide solution, followed by washing with deionized water for 20 seconds. As a result, a resist pattern in which line patterns with a line width of 270 nm were arranged at equal intervals (hereinafter referred to as pattern (1)) was formed on the resist film.

  Separately, an oxazoline group-containing polymer “(product name) Epocross WS-500” (manufactured by Nippon Shokubai Co., Ltd.) as a water-soluble resin is adjusted with water so that the total solid content concentration is 20% by mass, and a coating film forming material It was.

  This coating film forming material is applied on the pattern (1) by spin coating so as to have a thickness of about 80% of the film thickness of the pattern (1), and then at 130 ° C. for 60 seconds. Bake treatment was performed under the conditions of, and washed with deionized water for 60 seconds. As a result, the surface of the pattern (1) was covered with a water-soluble resin film.

  Subsequently, a resist solvent, propylene glycol monomethyl ether acetate (hereinafter also referred to as “PGMEA”), was spin-coated on the substrate on which the pattern (1) covered with the water-soluble resin film was formed, and the temperature was 140 ° C. After drying for 60 seconds, the entire surface was exposed without a mask, then developed under the same conditions as above, and washed with deionized water for 20 seconds. As a result, the pattern (1) could be removed, and only a pattern made of a water-soluble resin could be formed.

[Example 2]
An ArF resist composition “TArF-P6111” (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is spin-coated on an 8-inch silicon substrate and prebaked (PAB) at 140 ° C. for 60 seconds to form a film. A resist film having a thickness of 243 nm was formed. Next, this resist film was selectively applied through a mask having a line width of 250 nm and a pitch of 750 nm using a KrF excimer laser exposure machine NSR-S203 (manufactured by Nikon, NA = 0.68, σ = 0.75). Exposed. Next, after baking (PEB) was performed at 140 ° C. for 60 seconds, development was performed for 30 seconds using an aqueous 2.38 mass% tetramethylammonium hydroxide solution, followed by washing with deionized water for 20 seconds. As a result, a resist pattern in which line patterns with a line width of 270 nm were arranged at equal intervals (hereinafter referred to as pattern (1)) was formed on the resist film.

  Separately, polyvinyl pyrrolidone “PVP K30” (manufactured by BASF) as a water-soluble resin and urea-based cross-linking agent “N-8314” (manufactured by Sanwa Chemical Co., Ltd.) as a water-soluble cross-linking agent are 5% by mass with respect to the water-soluble resin. An aqueous solution (total solid content concentration = 5 mass%) containing 500 ppm of lauryl dimethylamine oxide as a surfactant was prepared as a coating film forming material.

  This coating film forming material was applied on the pattern (1) by spin coating so as to have a thickness of about 80% of the film thickness of the pattern (1), and then 130 ° C., 60 seconds. Bake treatment was performed under the conditions of, and washed with deionized water for 60 seconds. As a result, the surface of the pattern (1) was coated with a coating film (water-soluble resin film), and a coating line pattern was formed.

  Subsequently, propylene glycol monomethyl ether acetate (hereinafter also referred to as “PGMEA”), which is a resist solvent, is spin-coated on the substrate on which the covering line pattern is formed, and dried at 140 ° C. for 60 seconds. The film was fully exposed without a mask, then developed under the same conditions as above and washed with deionized water for 20 seconds. As a result, the pattern (1) could be removed, and only a pattern made of a water-soluble resin could be formed.

  According to the present invention, a wide range of industrial applications are possible not only in IC manufacturing in the semiconductor industry but also in the so-called nanotechnology field.

It is a schematic process drawing explaining preferable embodiment of the pattern formation method of this invention. It is a schematic process drawing explaining an example of the conventional double patterning method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Support body 2 Resist film 3 Resist pattern 4a Material for coating film formation 4 Coating film 5 Coating pattern (pattern consisting of coating film component)
101 Substrate 102 Lower layer film 103 Hard mask 104 Resist pattern 105 Mask 106 Resist pattern

Claims (6)

  1. A pattern forming method for forming a pattern on a support,
    Applying a positive resist composition on a support to form a resist film;
    A step of selectively exposing the resist film through a mask pattern and developing to form a resist pattern;
    Forming a coating film on the surface of the resist pattern using a coating film forming material comprising a water-soluble resin composition;
    Exposing the resist pattern coated with the coating film and developing the resist pattern to form a pattern made of the coating film component.
  2.   The pattern forming method according to claim 1, wherein the coating film forming material is composed of an aqueous solution containing at least a water-soluble resin and a water-soluble crosslinking agent.
  3.   The water-soluble resin includes at least one resin selected from the group consisting of an acrylic resin, a vinyl resin, a cellulose resin, an amide resin, and a polymer containing an oxazoline group. Item 3. The pattern forming method according to Item 2.
  4.   The pattern forming method according to claim 2 or 3, wherein the water-soluble resin contains at least one resin selected from the group consisting of polyvinylpyrrolidone and polyvinyl alcohol.
  5.   The said water-soluble crosslinking agent contains at least 1 sort (s) of substance selected from the group which consists of a triazine derivative, a glycoluril derivative, and a urea derivative, The any one of Claims 2-4 characterized by the above-mentioned. Pattern forming method.
  6. A coating film forming material used in the pattern forming method according to claim 1,
    A coating film-forming material comprising an aqueous solution containing at least a water-soluble resin and a water-soluble crosslinking agent.
JP2007221629A 2007-08-28 2007-08-28 Pattern forming method and material for forming coating film Pending JP2009053547A (en)

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TW097130829A TW200928592A (en) 2007-08-28 2008-08-13 Method for forming patterns and material for coating film
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009218556A (en) * 2008-03-12 2009-09-24 Taiwan Semiconductor Manufacturing Co Ltd Method of lithography patterning
JP2010060693A (en) * 2008-09-02 2010-03-18 Jsr Corp Pattern forming method
JP2011065136A (en) * 2009-06-26 2011-03-31 Rohm & Haas Electronic Materials Llc Self-aligned spacer multiple patterning method
JP2011070164A (en) * 2009-06-26 2011-04-07 Rohm & Haas Electronic Materials Llc Method of forming electronic device
US7935477B2 (en) 2007-11-30 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench
KR101120184B1 (en) * 2010-05-07 2012-02-27 주식회사 하이닉스반도체 Method for forming the pattern of semiconductor device
JP2014153665A (en) * 2013-02-13 2014-08-25 Toshiba Corp Material for forming mask and method of manufacturing semiconductor device
CN105388709A (en) * 2014-08-27 2016-03-09 罗门哈斯电子材料有限责任公司 Multiple-pattern forming methods

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7935477B2 (en) 2007-11-30 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench
JP2009218556A (en) * 2008-03-12 2009-09-24 Taiwan Semiconductor Manufacturing Co Ltd Method of lithography patterning
US8048616B2 (en) 2008-03-12 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench in photolithography
JP2010060693A (en) * 2008-09-02 2010-03-18 Jsr Corp Pattern forming method
JP2011065136A (en) * 2009-06-26 2011-03-31 Rohm & Haas Electronic Materials Llc Self-aligned spacer multiple patterning method
JP2011070164A (en) * 2009-06-26 2011-04-07 Rohm & Haas Electronic Materials Llc Method of forming electronic device
JP2011070165A (en) * 2009-06-26 2011-04-07 Rohm & Haas Electronic Materials Llc Composition and method for forming electronic device
KR101120184B1 (en) * 2010-05-07 2012-02-27 주식회사 하이닉스반도체 Method for forming the pattern of semiconductor device
JP2014153665A (en) * 2013-02-13 2014-08-25 Toshiba Corp Material for forming mask and method of manufacturing semiconductor device
CN105388709A (en) * 2014-08-27 2016-03-09 罗门哈斯电子材料有限责任公司 Multiple-pattern forming methods
JP2016048373A (en) * 2014-08-27 2016-04-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Multiple-pattern forming method
US9753370B2 (en) 2014-08-27 2017-09-05 Dow Global Technologies Llc Multiple-pattern forming methods
KR20170104136A (en) * 2014-08-27 2017-09-14 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 Multiple-pattern forming methods
CN105388709B (en) * 2014-08-27 2017-11-21 罗门哈斯电子材料有限责任公司 More pattern formation methods
KR102039572B1 (en) * 2014-08-27 2019-11-01 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 Multiple-pattern forming methods

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