JP2009021045A - X-ray generator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an X-ray generator using a PXR phenomenon, which can change X-ray wavelength while maintaining the X-ray irradiation direction constant. <P>SOLUTION: The laser beam 91 outputted from a light source 10 passes a laser beam incident window 31 to be inputted inside a container 30, is reflected by a first reflecting mirror 33 and a second reflecting mirror 35, and is condensed and irradiated on a metal thin film target 80 formed on a crystal 90 on a XY stage 37. Plasma is generated in the target 80, electrons 92 emitted from the target 80 enter the crystal 90, and X-rays 93 are emitted by a PXR phenomenon in the crystal 90. The angle θ of a lattice plane of the crystal 90 and an incident direction of the electrons 92 and the lattice spacing d of the crystal 90 are adjusted so as to satisfy the similar condition as a Bragg condition to a certain degree n<SB>1</SB>by gonio-stages 38 and 39. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an X-ray generator.

  Various types of X-ray generators are known. For example, an X-ray tube that generates X-rays by damping electrons collided with a metal target, and an X-ray laser apparatus that uses an inversion distribution formed in laser plasma are known. An X-ray generator that uses a phenomenon called X-ray radiation (hereinafter referred to as “PXR”) has attracted attention.

  With PXR, when relativistic high-energy electrons are incident on the crystal plane along the direction in which X-rays cause Bragg reflection, X-rays are generated as in the case of Bragg reflection that occurs when X-rays are incident. (Refer to Patent Document 1 and Non-Patent Documents 1 and 2).

  As shown in FIG. 1, it is assumed that the lattice plane interval of the crystal 90 is d, and the angle between the lattice plane of the crystal 90 and the incident direction of the electrons 92 is θ. Let the Planck constant be h and the speed of light in vacuum be c. Further, the diffraction order in the crystal 90 is n, the frequency of the X-ray 93 generated in the crystal 90 due to the PXR phenomenon is ν, and the energy of the X-ray 93 is E. At this time, there is a relationship represented by the expression “E = hν = cn / (2d sin θ)” between these parameters. Further, the radiation direction of the X-rays 93 from the lattice plane of the crystal 90 makes an angle 2θ with respect to the incident direction of the electrons 92 to the lattice plane of the crystal 90.

  For example, the crystal 90 is a silicon single crystal, the interval (111) of the (111) lattice plane is 3.14 mm, and the incident angle θ of the electrons 92 to the (111) lattice plane of the silicon single crystal 90 is 7.9 °. Suppose that the order n is 1. At this time, the energy E of the X-ray 93 radiated from the crystal 90 is 14.4 keV, and the wavelength of the X-ray 93 is 0.86 Å.

  The higher the energy of electrons incident on the crystal, the stronger the intensity of X-rays emitted from the crystal. However, the wavelength of X-rays radiated from the crystal (or energy per X-ray photon) is determined by the crystal lattice constant d or the electron incident angle θ as shown in the above formula, and electrons incident on the crystal As long as is relativistic, it does not change with the energy of the electrons. The X-ray energy of 14.4 keV corresponds to the X-ray energy generated in a large synchrotron radiation facility, and is much shorter than the X-ray output from a conventional laser plasma-based X-ray laser device. It is.

An X-ray tube that generates X-rays by braking electrons collided with a metal target can generate continuous X-rays in a band corresponding to the target voltage, but the X-rays are not coherent. In addition, an X-ray laser apparatus using an inversion distribution formed in laser plasma can generate coherent X-rays, but the wavelength of the X-rays is only 3 nm even if it is short. On the other hand, the X-ray generator using the PXR phenomenon is characterized in that it can generate coherent hard X-rays.
JP 2000-30892 A Endo Kazuta, et al., “Parametric X-ray Radiation”, Journal of the Physical Society of Japan, Vol.48, No.11, pp.878-885 (1993). T. Takashima, et al., "Observationof monochromatic and tunable hard X radiation from stratified Si singlecrystals", Nucl. Instrum. And Meth. In Phys. Res., Vol. B145, pp. 25-30 (1998).

  By the way, the X-ray generator using the PXR phenomenon is also characterized in that the wavelength of the generated X-ray can be changed by changing the incident angle θ of electrons to the crystal. However, changing the electron incident angle θ not only changes the X-ray wavelength, but also changes the X-ray emission direction.

  The present invention has been made to solve the above-mentioned problems, and is an X-ray generator that utilizes the PXR phenomenon, and can change the X-ray wavelength while maintaining the X-ray radiation direction constant. It aims at providing a wire generator.

  An X-ray generator according to the present invention includes (1) a light source that outputs laser light, (2) a container that receives laser light output from the light source from the outside along a predetermined line, and (3) A first reflecting mirror that is provided inside the container and that reflects laser light that is input into the container and incident along a predetermined line in a direction different from the predetermined line; and (4) is provided inside the container. A second reflecting mirror that reflects the laser beam that is reflected by the first reflecting mirror in a direction parallel to a plane perpendicular to the predetermined line and different from the incident direction; and (5) provided inside the container, (2) an electron emitting means for irradiating the target with the laser beam reflected by the two reflecting mirrors to emit electrons from the target; and (6) X provided with the incidence of electrons emitted from the electron emitting means provided inside the container. Holds the crystal that generates the line and the electrons to this crystal A first moving means for rotating the crystal about a line passing through the incident position and parallel to a predetermined line; and (7) a second moving means for rotating the container about the predetermined line as a central axis. And

  In the X-ray generator according to the present invention, the laser light output from the light source is input to the inside of the container along a predetermined line from the outside of the container, and inside the container, a predetermined line (laser light by the first reflecting mirror). The light is reflected in a direction different from the incident line, and further reflected by the second reflecting mirror in a direction parallel to a plane perpendicular to the predetermined line (laser light incident line) and different from the incident direction. The laser beam reflected by the second reflecting mirror is irradiated onto the target by the electron emitting means, and electrons are emitted from the target. The electrons are incident on the crystal, and X-rays are emitted from the crystal by the PXR phenomenon.

  By the first moving means, the crystal is rotated around a line parallel to a predetermined line (laser beam incident line) that passes through the electron incident position on the crystal, thereby changing the wavelength of the emitted X-ray. Is done. Further, the container is rotated about the predetermined line (laser beam incident line) by the second moving means, and each element and crystal inside the container are also rotated at the same time. The radiation direction can be kept constant.

  The X-ray generator according to the present invention preferably further includes an X-ray collimator that selectively outputs X-rays generated in the crystal and output to the outside of the container in a specific direction. . In this case, the X-ray collimator selectively outputs X-rays generated in the crystal and output to the outside of the container in a specific direction, so that X-rays with excellent directivity can be obtained. can get.

  In the X-ray generator according to the present invention, the container is a container that can evacuate the inside, and is generated by a laser light incident window that allows laser light to pass from the outside to the inside along a predetermined line and the crystal. It is preferable to further include an exhaust unit that has an X-ray exit window that allows X-rays to pass from the inside to the outside and exhausts the inside of the container. In this case, the inside of the container is exhausted by the exhaust means. The laser light output from the light source passes through the laser light incident window along a predetermined line from the outside of the container and is input to the inside of the container. In addition, X-rays generated in the crystal pass through the X-ray exit window from the inside of the container and are output to the outside of the container.

  In the X-ray generator according to the present invention, it is preferable that the electron emission means use a thin film provided on the surface of the crystal as a target and irradiate the target with laser light to emit electrons from the target. In this case, it is preferable that the X-ray generator according to the present invention further includes a protective member that has a through-hole through which the laser light passes at the position where the laser light enters the target and protects the target.

  In the X-ray generator according to the present invention, the electron emitting means uses a thin film provided between the second reflecting mirror and the crystal as a target, and irradiates the target with laser light to emit electrons from the target. Is preferred. In this case, the X-ray generator according to the present invention preferably further includes an electronic collimator for collimating electrons emitted from the target.

  In the X-ray generator according to the present invention, the electron emission means uses a gas existing between the second reflecting mirror and the crystal as a target, and irradiates the target with laser light to emit electrons from the target. Is preferred. In this case, it is preferable that the X-ray generator according to the present invention further includes a gas supply means for supplying a gas as a target into the container.

  The X-ray generator according to the present invention utilizes the PXR phenomenon, and can change the X-ray wavelength while maintaining the X-ray radiation direction constant.

  The best mode for carrying out the present invention will be described below in detail with reference to the accompanying drawings. In the description of the drawings, the same or similar elements are denoted by the same reference numerals, and redundant description is omitted.

  2-5 is a figure which shows the structure of the X-ray generator 1 which concerns on this embodiment. FIG. 2 is a perspective view showing an external appearance of the X-ray generator 1, and each element inside the container 30 is indicated by a broken line. FIG. 3 is a perspective view showing an internal configuration of the container 30, and the container 30 is indicated by a two-dot chain line. FIG. 4 is a view when the inside of the container 30 is viewed in a direction along a predetermined line (laser beam incident line). FIG. 5 is a view when the inside of the container 30 is viewed from above.

  The X-ray generator 1 according to this embodiment includes a light source 10, a container 30 placed on the mount 20, an X-ray collimator 40, and an exhaust device 50. The light source 10 outputs an ultrashort pulse high-intensity laser beam 91 to be input into the container 30. On the gantry 20, a container 30 is placed via a gonio stage 39, and an X-ray collimator 40 is placed via a support member 41. The light source 10 may be placed on the gantry 20. In addition, an exhaust device 50 is connected to the container 30 via an exhaust pipe 51. The container 30 is a container in which a laser beam 91 output from a light source is input to the inside along a predetermined line from the outside, and the outer shape has a cylindrical shape and can be exhausted.

  The container 30 has a laser beam incident window 31 that allows the laser beam 91 to pass from the outside to the inside along a predetermined line, and an X-ray emission that allows the X-ray 93 generated by the crystal 90 inside the vessel 30 to pass from the inside to the outside. And a window 32. The predetermined line (laser beam incident line) is a line that coincides with the central axis of the cylindrical container 30. The laser beam incident window 31 is provided in the central region of the bottom surface of the cylindrical container 30 and is made of a glass material that can transmit the laser beam 91 with low loss. The laser light incident window 31 is a metal film made of a material and a thickness that allow the X-rays 93 generated in the crystal 90 inside the container 30 to pass through, and is made of beryllium, for example. The radiation direction of the X-ray 93 is parallel to a plane perpendicular to a predetermined line (laser beam incident line).

  Inside the container 30, a first reflecting mirror 33, a supporting member 34, a second reflecting mirror 35, a supporting member 36, an XY stage 37, and a gonio stage 38 are provided. Inside the container 30, a first reflecting mirror 33 is provided via a support member 34, and a second reflecting mirror 35 is provided via a support member 36. A gonio stage 38 is provided inside the container 30, and an XY stage 37 is provided on the gonio stage 38.

  The first reflecting mirror 33 reflects the laser light 91 that has been input to the inside of the container 30 through the laser light incident window 31 and entered along a predetermined line in a direction different from the predetermined line. The second reflecting mirror 35 reflects the laser beam 91 which has been reflected and arrived by the first reflecting mirror 33 in a direction parallel to a plane perpendicular to the predetermined line and different from the incident direction. Further, the second reflecting mirror 35 is an off-axis parabolic mirror, and condenses the reflected laser light 91. The XY stage 37 holds a crystal 90 that generates X-rays with the incidence of electrons emitted by the electron emission means. The gonio stage 38 acts as first moving means for rotating the XY stage 37 and the crystal 90. The central axis of the rotational movement by the gonio stage 38 is a line that passes through the electron incident position on the crystal 90 and is parallel to a predetermined line.

  The electron emitting means is provided inside the container 30 and emits electrons from the target by irradiating the target with laser light 91 reflected by the second reflecting mirror 35. In the present embodiment, this electron emission target is provided on the surface of the crystal 90. Details will be described later.

  The gonio stage 39 acts as second moving means for rotating the container 30 about a predetermined line (laser beam incident line) as a central axis. When the container 30 is rotated, each element and the crystal 90 inside the container 30 are also rotated about a predetermined line (laser beam incident line) as a central axis.

  The X-ray collimator 40 is provided on the gantry 20 via a support member 41, and proceeds in a specific direction among the X-rays 93 generated from the crystal 90 in the container 30 and output to the outside of the container 30. Line 93 is selectively output. The exhaust device 50 is connected to the container 30 via the exhaust pipe 51 and exhausts the inside of the container 30 to make a vacuum.

  FIG. 6 is a cross-sectional view showing configurations of the crystal 90 for X-ray emission and the target 80 for electron emission in the X-ray generator 1 according to the present embodiment. As shown in this figure, the surface of the crystal 90 is parallel to the crystal lattice plane. A thin film is provided on the surface of the crystal 90 as a target 80 as electron emission means. The target 80 is preferably a metal thin film for efficiently emitting electrons 92, and is made of, for example, a deposited film of titanium, tantalum, or gold. When the laser beam 91 reflected by the second reflecting mirror 35 is condensed and irradiated onto the target 80, plasma is generated at the target 80, and electrons 92 are emitted from the target 80, and the electrons 92 are incident on the crystal 90. The

The emission direction of the electrons 92 from the target 80 is equal to the incident direction of the laser light 91 to the target 80 and has a sharp directivity. For example, an electron 92 having a sharp directivity and energy of several to several tens MeV is generated from a laser plasma generated by irradiating the target 80 with a pulse laser beam 91 having a condensed intensity of 10 ¹⁸ W / cm ² or more. A large amount of light is emitted within a short time (several tens to 100 fs), which is the same as the pulse length of light. When electrons 92 emitted from the target 80 enter the crystal 90, X-rays 93 are emitted from the crystal 90 due to the PXR phenomenon.

  Next, the operation of the X-ray generator 1 according to this embodiment will be described. First, the inside of the container 30 is evacuated and evacuated by an exhaust device 50 connected via an exhaust pipe 51. The ultrashort pulse high-intensity laser beam 91 output from the light source 10 passes through the laser beam incident window 31 of the container 30 along a predetermined line and is input into the container 30. The laser beam 91 input into the container 30 enters the first reflecting mirror 33 along a predetermined line (laser beam incident line), and is sequentially reflected by the first reflecting mirror 33 and the second reflecting mirror 35. .

  The laser beam 91 reflected by the second reflecting mirror 35 is focused and irradiated on the metal thin film target 80 formed on the surface of the crystal 90 held by the XY stage 37. At this time, the incident direction of the laser beam 91 on the target 80 is parallel to a plane perpendicular to the predetermined line (laser beam incident line). When the laser beam 91 is focused and irradiated on the target 80, plasma is generated in the target 80, electrons 92 are emitted from the target 80, and the electrons 92 are incident on the crystal 90.

By the gonio stage 38 and the gonio stage 39, the angle θ between the lattice plane of the crystal 90 and the incident direction of the electrons 92 and the lattice plane interval d of the crystal 90 satisfy the same conditions as the Bragg condition for a certain order n ₁ . It has been adjusted. Therefore, the X-ray 93 having the energy E ₁ represented by the formula “E ₁ = cn ₁ / (2d sin θ)” is emitted from the crystal 90 due to the PXR phenomenon. The radiation direction of the X-ray 93 from the lattice plane of the crystal 90 at this time forms an angle 2θ with respect to the incident direction of the electrons 92 to the lattice plane of the crystal 90 and is perpendicular to a predetermined line (laser beam incident line). Parallel to a flat surface. The X-ray 93 generated in the crystal 90 passes through the X-ray emission window 32 of the container 30 and is output to the outside of the container 30. Then, X-rays traveling in a specific direction among the X-rays 93 output to the outside of the container 30 are selectively output by the X-ray collimator 40.

In order to develop the PXR phenomenon, the velocity (energy) of the electrons 92 incident on the crystal 90 needs to be relativistic. That is, the speed of the electrons 92 needs to be at the light speed level. For example, an electron with an energy of 1 MeV has a velocity of 0.94c (94% of the speed of light) and is sufficient to cause the PXR phenomenon. Further, the speed of electrons with an energy of 10 MeV reaches 0.9998c, and the speed of electrons with an energy of 100 MeV corresponds to 0.99999c, both of which sufficiently satisfy the conditions for causing the PXR phenomenon. In order to condense and irradiate the laser beam 91 onto the metal thin film target 80 to generate electrons 92 having an energy of 1 MeV or more, it is necessary that the condensing intensity is 10 ¹⁷ W / cm ² or more. This corresponds to the case where the laser beam 91 having a peak output of 0.1 TW is condensed in a range of 10 μm × 10 μm.

It is preferable that the laser beam 91 having a peak output of 1 TW or more is condensed in a range of 10 μm × 10 μm or less to obtain a condensing intensity of 10 ¹⁸ W / cm ² . In order to obtain a peak output of 1 TW, it is necessary that the pulse width of the laser beam 91 is 100 fs and the energy is 100 mJ. Here, when the pulse width of the laser beam 91 is short, the same peak output can be obtained with a small amount of energy. For example, in the case of a pulse width of 50 fs, a peak output of 1 TW can be obtained with an energy of 50 mJ. Further, even if the peak output is small, the same light collection intensity can be obtained as long as the laser light 91 can be collected in a narrow region. For example, in order to obtain the above-described light collecting intensity of 10 ¹⁸ W / cm ² , it is only necessary to make the light collecting range 5 μm × 5 μm even if the pulse width is 100 fs, the energy is 25 mJ, and the peak output is as small as 0.25 TW.

When laser energy is used to generate high energy electrons, an important parameter is the focused intensity (W / cm ² ). The pulse width and energy of the laser beam 91 for realizing the focused intensity, and the target 80. The light condensing range can be selected as appropriate as described above.

Since the X-ray generator 1 according to the present embodiment uses the PXR phenomenon, the wavelength of the output X-ray 93 can be changed. In other words, the X-ray generator 1 causes the gonio stage 38 inside the container 30 to angle the crystal 90 around a line passing through the electron incident position on the crystal 90 and parallel to a predetermined line (laser beam incident line). By rotating by α, the incident angle of the electrons 92 to the crystal plane of the crystal 90 can be changed to (θ + α). When the incident angle (θ + α) is adjusted so as to satisfy the same condition as the Bragg condition for a certain order n ₂ , the expression “E ₂ = cn ₂ / (2d sin (θ + α)” is obtained due to the PXR phenomenon. X-rays 93 having the energy E ₂ represented are emitted by the crystal 90.

  The radiation direction of the X-rays 93 from the lattice plane of the crystal 90 at this time forms an angle 2 (θ + α) with respect to the incident direction of the electrons 92 to the lattice plane of the crystal 90, and a predetermined line (laser beam incident line) ) Parallel to a plane perpendicular to. The X-ray 93 generated in the crystal 90 passes through the X-ray emission window 32 of the container 30 and is output to the outside of the container 30. However, the X-ray generated at the incident angle (θ + α) is emitted in a direction different from the radiation direction of the X-ray generated at the incident angle θ, and cannot be collimated by the X-ray collimator 40.

  Therefore, the X-ray generator 1 rotates and moves the container 30 by an angle (−2α) around a predetermined line (laser beam incident line) by the gonio stage 39 outside the container 30. Each element and the crystal 90 inside are also rotated and moved simultaneously. As a result, the X-ray generated at the incident angle (θ + α) is radiated in the same direction as the X-ray radiation direction generated at the incident angle θ, passes through the X-ray exit window 32, and the outside of the container 30. To be collimated by the X-ray collimator 40. The X-ray exit window 32 has a long shape in the circumferential direction of the container 30 so that the X-ray 93 can be output to the outside even when the container 30 rotates and moves in this manner.

  Generally, when a solid material is focused and irradiated with laser light, the surface of the laser light irradiation region is processed. Therefore, the X-ray 93 can be generated only once in one area of the target 80. Therefore, in the X-ray generator 1 according to the present embodiment, in order to generate X-rays 93 repeatedly, the crystal 90 is moved by the XY stage 37 so that a new region is always irradiated with laser light. That is, the XY stage 37 holding the crystal 90 can translate the crystal 90 in a two-dimensional direction parallel to the lattice plane of the crystal 90. Even when the crystal 90 is translated by the XY stage 37, the Bragg condition is maintained, and the energy and radiation direction of the X-rays 93 emitted from the crystal 90 do not change.

  In general, when a solid surface is processed by laser light irradiation, substances on the surface may scatter around the surface, and scattered matter may adhere to the surface of a region not irradiated with laser light. Therefore, in the X-ray generator 1 according to the present embodiment, a protective member 81 as shown in FIG. 7 is provided in order to prevent such scattered matter from adhering. The protective member 81 has a through-hole 81A that allows the laser light 91 to pass therethrough at a position where the laser light 91 is incident on the target 80 provided on the surface of the crystal 90, and is scattered on the surface of the region not irradiated with the laser light. The target 80 is protected by preventing the adhesion. The protection member 81 is fixed to the upper surface of the gonio stage 38 via the support member 82, and the position of the through hole 91A does not change even if the crystal 90 is translated by the XY stage 37.

  In the embodiments described so far, a thin film is provided as the target 80 on the surface of the crystal 90. However, the target 80 as the electron emission means may have various other aspects.

  FIG. 8 is a diagram illustrating another configuration example of the crystal 90 and the target 80 in the X-ray generator 1 according to the present embodiment. In this configuration example, the thin film as the target 80 is not provided on the surface of the crystal 90, but is provided in a space between the second reflecting mirror 35 and the crystal 90. The target 80 is preferably in the form of a tape that is long in one direction, and is preferably a metal thin film for efficiently emitting electrons 92. For example, the target 80 has a thickness of 5 such as titanium or tantalum. A 10 μm tape is used. In addition, it is preferable that an electron collimator 83 for collimating the electrons 92 emitted from the target 80 is provided in the space between the target 80 and the crystal 90.

  In the configuration example shown in FIG. 8, when the laser beam 91 reflected by the second reflecting mirror 35 is focused and irradiated onto the thin film target 80, plasma is generated at the target 80 and electrons 92 are emitted from the target 80. Is done. The electrons 92 are adjusted in direction by an electron collimator 83 and are incident on the crystal 90. Then, the crystal 90 on which the electrons 92 are incident emits X-rays 93 due to the PXR phenomenon.

  In the configuration example shown in FIG. 8, the electrons 92 can be emitted only once in one region of the thin film target 80. Therefore, it is preferable to provide a mechanism for moving the thin film target 80 in parallel. Moreover, if the thin film target 80 is a tape-shaped object, it is preferable that a mechanism for feeding out the tape-shaped thin film target 80 wound around the bobbin from one end is provided.

  FIG. 9 is a diagram showing still another configuration example of the crystal 90 and the target 80 in the X-ray generator 1 according to the present embodiment. In this configuration example, a gas such as argon, nitrogen, and xenon existing between the second reflecting mirror 35 and the crystal 90 is used as the target 80. It is preferable that a gas supply means for supplying a gas as the target 80 into the container 30 is provided. The gas target 80 is supplied into the container 30 in synchronization with the pulse of the laser beam 91.

  In the configuration example shown in FIG. 9, when the laser light 91 reflected by the second reflecting mirror 35 is focused and irradiated onto the gas target 80, plasma is generated at the target 80 and electrons 92 are emitted from the target 80. Is done. The electrons 92 are incident on the crystal 90. Then, the crystal 90 on which the electrons 92 are incident emits X-rays 93 due to the PXR phenomenon.

  In the configuration example shown in FIG. 9, it is easy to continuously supply the gas into the container 30, and the X-rays 93 can be emitted for a long time. In addition, since the electrons 92 emitted from the gas target 80 have energy of several tens MeV and high directivity, it is possible to emit X-rays 93 having high intensity.

  In the configuration example shown in FIG. 6, since the X-ray emission crystal 90 and the electron emission target 80 are integrated, it is necessary to translate the crystal 90 each time the laser beam 91 is irradiated with a pulse. It was. On the other hand, in the configuration examples shown in FIGS. 8 and 9, since the crystal 90 for X-ray emission and the target 80 for electron emission are separated, the crystal 90 is not damaged by electron irradiation. The XY stage 37 and the protection member 81 are unnecessary.

  The X-ray generator 1 according to the present embodiment is capable of generating coherent hard X-rays using the PXR phenomenon, and uses an inversion distribution formed in laser plasma ( Hereinafter, it is referred to as “Comparative Example”) and has the following advantages. That is, in the comparative example, 340 eV is the current maximum energy, but in this embodiment, monochromatic X-rays of 10 keV or more can be easily obtained. In this embodiment, the wavelength of X-rays to be generated can be easily changed by changing the angle of laser light or electrons incident on the crystal. In the present embodiment, when the incident angle to the crystal is changed, the direction of the emitted X-ray can be made constant by rotating the container 30 and the operability when used is excellent. In the comparative example, the gas target itself is an X-ray source. In the present embodiment, an arrangement in which the crystal 90 for X-ray emission and the target 80 for electron emission are separated is possible. Therefore, the degree of freedom of device configuration is high.

It is a figure explaining X-ray generation by a PXR phenomenon. It is a perspective view which shows the external appearance of the X-ray generator 1 which concerns on this embodiment. It is a perspective view which shows the structure inside the container 30 of the X-ray generator 1 which concerns on this embodiment. It is a figure when the inside of the container 30 of the X-ray generator 1 which concerns on this embodiment is seen in the direction along a predetermined line (laser beam incident line). It is a figure when the inside of the container 30 of the X-ray generator 1 which concerns on this embodiment is seen from upper direction. FIG. 3 is a cross-sectional view showing a configuration of a crystal 90 and a target 80 in the X-ray generator 1 according to the present embodiment. It is a perspective view which shows the structure of the crystal | crystallization 90, the target 80, and the protection member 81 in the X-ray generator 1 which concerns on this embodiment. It is a figure which shows the other structural example of the crystal | crystallization 90 and the target 80 in the X-ray generator 1 which concerns on this embodiment. It is a figure which shows the further another structural example of the crystal | crystallization 90 and the target 80 in the X-ray generator 1 which concerns on this embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... X-ray generator, 10 ... Light source, 20 ... Mount, 30 ... Container, 31 ... Laser beam incident window, 32 ... X-ray emission window, 33 ... 1st reflective mirror, 34 ... Support member, 35 ... 2nd reflection Mirror stage 36 ... support member 37 ... XY stage 38 ... gonio stage 39 ... gonio stage 40 ... X-ray collimator 41 ... support member 50 ... exhaust device 51 ... exhaust pipe 80 ... target 81 ... Protective member, 82 ... support member, 83 ... electronic collimator, 90 ... crystal, 91 ... laser beam, 92 ... electron, 93 ... X-ray.

Claims (6)

A light source that outputs laser light;
A container into which laser light output from the light source is input from the outside along a predetermined line;
A first reflecting mirror that is provided inside the container and reflects laser light that is input into the container and incident along the predetermined line in a direction different from the predetermined line;
A second reflecting mirror that is provided inside the container and reflects the laser beam that has been reflected and reached by the first reflecting mirror in a direction parallel to a plane perpendicular to the predetermined line and different from the incident direction;
An electron emitting means provided inside the container and irradiating the target with laser light reflected by the second reflecting mirror to emit electrons from the target;
A crystal provided inside the container and generating X-rays with the incidence of electrons emitted by the electron emission means is held, and a line parallel to the predetermined line passes through the incident position of the electrons to the crystal. First moving means for rotationally moving the crystal as an axis;
Second moving means for rotating the container around the predetermined line as a central axis;
An X-ray generator comprising:   2. The X-ray generation according to claim 1, further comprising an X-ray collimator that selectively outputs X-rays generated in the crystal and output to the outside of the container in a specific direction. apparatus. The container is a container capable of evacuating the inside thereof, a laser light incident window through which laser light passes from the outside to the inside along the predetermined line, and X-rays generated from the crystal from the inside to the outside An X-ray exit window to pass through,
An exhaust means for exhausting the interior of the container;
The X-ray generator according to claim 1.   2. The X-ray generation according to claim 1, wherein the electron emitting means uses the thin film provided on the surface of the crystal as the target, and emits electrons from the target by irradiating the target with laser light. apparatus.   The electron emitting means uses the thin film provided between the second reflecting mirror and the crystal as the target, and irradiates the target with laser light to emit electrons from the target. Item 2. The X-ray generator according to Item 1.   The electron emission means uses the gas existing between the second reflecting mirror and the crystal as the target, and emits electrons from the target by irradiating the target with laser light. The X-ray generator according to 1.

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