JP2008525999A5 - - Google Patents
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- JP2008525999A5 JP2008525999A5 JP2007547030A JP2007547030A JP2008525999A5 JP 2008525999 A5 JP2008525999 A5 JP 2008525999A5 JP 2007547030 A JP2007547030 A JP 2007547030A JP 2007547030 A JP2007547030 A JP 2007547030A JP 2008525999 A5 JP2008525999 A5 JP 2008525999A5
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- JP
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- Prior art keywords
- chamber
- processing
- processing chamber
- region
- heated
- Prior art date
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Claims (15)
処理領域を画成するチャンバ本体と、
前記チャンバ本体の範囲内に少なくとも部分的に配置され且つ前記処理領域内に基板を支持するように適合された支持アセンブリと、
円筒電極、及び、前記処理領域から離れたプラズマ形成領域を画成するカップ型接地電極を有するプラズマ源とを備え、
前記プラズマ形成領域は、前記処理領域と連通しており、
前記円筒電極及び前記カップ型接地電極は、前記各電極の表面の少なくとも一部が前記プラズマ形成領域を形成すると共に前記プラズマ形成領域を取り囲むように、隔置されている、前記処理チャンバ。 A processing chamber for a substrate, comprising:
A chamber body defining a processing region;
And adapted support assembly to support a substrate to said at least partially disposed within the chamber body and the processing region,
Cylindrical electrodes, and a plasma source having a cup-shaped ground electrode defining a plasma formation region apart from the processing region,
The plasma forming region communicates with the processing region;
The processing chamber, wherein the cylindrical electrode and the cup-type ground electrode are spaced apart such that at least a part of the surface of each electrode forms the plasma formation region and surrounds the plasma formation region .
処理チャンバから基板を取り除くステップと、
前記処理チャンバ内の支持部材の中のチャネルへの冷却流体フローを遮断するステップと、
前記支持部材をガス分配プレートの約0.1インチ以内であるように上昇させるステップと、
前記ガス分配プレートを加熱するステップと、
前記ガス分配プレートを通して熱伝導洗浄ガスを前記処理チャンバに導入するステップと、
前記処理チャンバから堆積物を取り除くステップとを含む前記方法。 A method for cleaning a processing chamber, comprising:
Removing the substrate from the processing chamber;
A step of blocking the cooling fluid flow into the channel in the support member in the processing chamber,
Raising the support member to be within about 0.1 inch of the gas distribution plate;
Heating said gas distribution plate,
Introducing a heat-conducting cleaning gas into the processing chamber through the gas distribution plate,
Removing the deposits from the processing chamber .
The method of claim 8 , wherein the thermally conductive cleaning gas comprises hydrogen, helium, or argon.
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63789704P | 2004-12-21 | 2004-12-21 | |
US60/637,897 | 2004-12-21 | ||
US11/137,200 | 2005-05-24 | ||
US11/137,200 US20060130971A1 (en) | 2004-12-21 | 2005-05-24 | Apparatus for generating plasma by RF power |
US11/266,167 US20060051966A1 (en) | 2004-02-26 | 2005-11-03 | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US11/266,167 | 2005-11-03 | ||
PCT/US2005/046226 WO2006069085A2 (en) | 2004-12-21 | 2005-12-20 | An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012204729A Division JP5698719B2 (en) | 2004-12-21 | 2012-09-18 | In-situ chamber cleaning process to remove byproduct deposits from chemical vapor deposition etch chambers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008525999A JP2008525999A (en) | 2008-07-17 |
JP2008525999A5 true JP2008525999A5 (en) | 2009-02-12 |
JP5184890B2 JP5184890B2 (en) | 2013-04-17 |
Family
ID=36594226
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007547030A Active JP5184890B2 (en) | 2004-12-21 | 2005-12-20 | Processing chamber for substrates |
JP2012204729A Active JP5698719B2 (en) | 2004-12-21 | 2012-09-18 | In-situ chamber cleaning process to remove byproduct deposits from chemical vapor deposition etch chambers |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012204729A Active JP5698719B2 (en) | 2004-12-21 | 2012-09-18 | In-situ chamber cleaning process to remove byproduct deposits from chemical vapor deposition etch chambers |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP5184890B2 (en) |
TW (1) | TWI387667B (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5260861B2 (en) * | 2006-11-29 | 2013-08-14 | 東京エレクトロン株式会社 | Capacitor electrode manufacturing method, manufacturing system, and recording medium |
US8642477B2 (en) | 2008-05-30 | 2014-02-04 | United Microelectronics Corp. | Method for clearing native oxide |
WO2012054206A2 (en) * | 2010-10-19 | 2012-04-26 | Applied Materials, Inc. | Quartz showerhead for nanocure uv chamber |
JP5703000B2 (en) * | 2010-12-01 | 2015-04-15 | 株式会社アルバック | Radical cleaning method |
KR20200098716A (en) | 2012-02-14 | 2020-08-20 | 엔테그리스, 아이엔씨. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
JP2015138931A (en) * | 2014-01-24 | 2015-07-30 | 株式会社日立ハイテクノロジーズ | vacuum processing apparatus and vacuum processing method |
US10203604B2 (en) * | 2015-11-30 | 2019-02-12 | Applied Materials, Inc. | Method and apparatus for post exposure processing of photoresist wafers |
US10337105B2 (en) * | 2016-01-13 | 2019-07-02 | Mks Instruments, Inc. | Method and apparatus for valve deposition cleaning and prevention by plasma discharge |
WO2017123423A1 (en) * | 2016-01-13 | 2017-07-20 | Applied Materials, Inc. | Hydrogen plasma based cleaning process for etch hardware |
US10325790B2 (en) * | 2016-04-29 | 2019-06-18 | Applied Materials, Inc. | Methods and apparatus for correcting substrate deformity |
US10522371B2 (en) * | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
JP6742265B2 (en) * | 2017-03-28 | 2020-08-19 | 東京エレクトロン株式会社 | Method for suppressing adhesion of cleaning by-product, method for cleaning reaction chamber using the same, and room temperature film forming apparatus |
CN117174641A (en) * | 2017-04-07 | 2023-12-05 | 应用材料公司 | Plasma density control at substrate edge |
JP6615153B2 (en) | 2017-06-16 | 2019-12-04 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate mounting mechanism, and substrate processing method |
DE202018100363U1 (en) * | 2018-01-23 | 2019-04-24 | Aixtron Se | Device for connecting a susceptor to a drive shaft |
US11685994B2 (en) | 2019-09-13 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | CVD device pumping liner |
KR102516340B1 (en) * | 2020-09-08 | 2023-03-31 | 주식회사 유진테크 | Substrate processing apparatus and operation method for substrate processing apparatus |
US20230070804A1 (en) * | 2021-09-02 | 2023-03-09 | Wonik Ips Co., Ltd. | Substrate processing apparatus |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01289110A (en) * | 1988-05-17 | 1989-11-21 | Canon Inc | Formation of deposited film |
JPH02121330A (en) * | 1988-10-31 | 1990-05-09 | Hitachi Ltd | Plasma processing and device therefor |
JPH05235520A (en) * | 1992-02-20 | 1993-09-10 | Matsushita Electric Works Ltd | Treatment of circuit board by use of plasma |
EP0697467A1 (en) * | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
JP4121269B2 (en) * | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | Plasma CVD apparatus and method for performing self-cleaning |
JP2003249490A (en) * | 2001-12-20 | 2003-09-05 | Mitsubishi Heavy Ind Ltd | Radical gun |
US6921556B2 (en) * | 2002-04-12 | 2005-07-26 | Asm Japan K.K. | Method of film deposition using single-wafer-processing type CVD |
JP3838969B2 (en) * | 2002-12-17 | 2006-10-25 | 沖電気工業株式会社 | Dry etching method |
-
2005
- 2005-12-20 JP JP2007547030A patent/JP5184890B2/en active Active
- 2005-12-20 TW TW94145341A patent/TWI387667B/en active
-
2012
- 2012-09-18 JP JP2012204729A patent/JP5698719B2/en active Active
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