JP2008301521A - Imaging apparatus for microscope, and pixel defect detecting method of imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To detect a pixel defect (including pixel defects occurring subsequently) with high accuracy, without having to depend on the ambient temperature. <P>SOLUTION: An imaging apparatus for a microscope has a camera 32, including a CCD 32a picking up a sample image; a microscope body 31 including a member 43a cutting off light incident on the CCD 32a; a control function of storing a dark-time signal of the CCD 32a shielded by the member 43a from the light in a first storage means; a pixel defect detecting function of detecting the pixel defect, on the basis of the dark-time signal; a second storage means stored with position information on the pixel defect; a controller 33 which detects a light shield leakage on the basis of the dark-time signal; and a CRT monitor 35 which displays information associated with the light shield leak, when the controller 33 detects light shield leakage. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a technique for detecting a pixel defect (a defect in a photoelectric conversion unit region) present in an image sensor provided in an imaging device such as an electronic camera or a microscope camera.

  In general, it is known that in a solid-state imaging device formed of a semiconductor such as a CCD (Charge Coupled Device), the image quality is deteriorated due to a pixel defect due to a local crystal defect of the semiconductor. For example, a pixel defect in which a constant bias voltage is always added to the imaging output corresponding to the amount of incident light appears as a high-intensity white spot on the monitor if the signal is processed as it is. It is. Also, pixel defects with low photoelectric sensitivity appear as black dots on the monitor and are called black scratches.

  Therefore, various techniques for detecting and correcting pixel defects have been proposed in order to prevent the occurrence of such white scratches or black scratches and prevent image quality deterioration (for example, Patent Document 1). In addition to Patent Document 1, data representing pixel defects of the image sensor at room temperature, or data for compensating (correcting) these pixel defects at room temperature, are stored in advance, and pixels based on this data are stored. Techniques that compensate for defects have also been proposed.

  However, the degree of defect of this pixel defect varies greatly depending on the temperature of the image sensor, and it has become increasingly clear that there are many pixel defects related to white scratches that are temperature-dependent due to dark current. For this reason, if pixel defects are uniformly compensated using the above-described data at normal temperature without depending on the temperature of the image sensor, there is a possibility that appropriate compensation cannot be performed.

  Therefore, by increasing or decreasing the coefficient for variably setting the degree of pixel defect correction according to the detected value of the temperature of the image sensor, there is a problem that defective pixels become more noticeable due to excessive correction or compensation. The corresponding defective pixel position information is read out from the defective pixel position information related to the CCD for each of a plurality of temperature ranges stored in advance in accordance with the technology for avoiding the above and the detected value of the temperature of the image sensor. A technique for correcting a defective pixel based on the defective pixel position information has been proposed (for example, Patent Document 2).

On the other hand, it is known that when an imaging device (for example, an electronic camera or the like) is transported by air in the Arctic Circle or Antarctica, a new pixel defect may occur due to cosmic rays. Therefore, a technique for inspecting and correcting this newly generated pixel defect (hereinafter also referred to as a subsequent pixel defect) has been proposed (for example, Patent Document 3).
Japanese Patent Laid-Open No. 06-205302 JP-A-11-112879 JP 2002-125154 A

  However, the inspection and correction of the subsequent pixel defects are not performed in a state where the temperature condition of the image sensor is constantly controlled as in the factory shipment, and various temperatures are determined according to instructions from the operator or the like. Under the conditions. Therefore, due to the temperature dependency of the pixel defect described above, the inspection and correction of the subsequent pixel defect are performed under various temperature conditions, which may not be performed properly.

  In addition, due to the temperature dependence of pixel defects, in the case of an image sensor having a cooling means such as a cooled CCD, the influence of the pixel defect is reduced by cooling the image sensor, and the pixel to be originally detected There was a risk that defects would not be detected.

  Furthermore, in a camera that does not have a function of automatically blocking light incident on the image sensor, such as a microscope camera, since the light shielding is performed by the user's operation, the image sensor is sufficiently operated by the user by mistake. If the light is not shielded, the dark output of the image sensor at the time of detecting the pixel defect may not be acquired properly, and the pixel defect may not be properly inspected and corrected.

  In view of the above circumstances, an object of the present invention is to provide an imaging apparatus for a microscope and a pixel defect detection method for an imaging element that can accurately detect pixel defects (including subsequent pixel defects) without depending on the ambient temperature. is there.

  The apparatus according to the first aspect of the present invention includes a camera including an imaging element that captures a specimen image, a microscope including a light shielding unit that shields light incident on the imaging element, and the light shielded by the light shielding unit. A control means for reading out a dark signal of the image sensor and storing it in the first storage means, a pixel defect detection means for detecting a pixel defect based on the dark signal, and a second information for storing the position information of the pixel defect. And a display means for displaying information on the light shielding leakage when the light detecting leakage is detected by the detecting means. Device.

  According to the above configuration, when a light-blocking leak is detected when detecting a pixel defect, information about the light-blocking leak can be displayed, so that pixel defect detection is performed in the state of the light-blocking leak due to, for example, a user's erroneous operation. The pixel defect can be detected with high accuracy.

  The method according to the second aspect of the present invention is a pixel defect detection method for an image sensor applied to an imaging apparatus for a microscope, wherein the image sensor that captures a specimen image is shielded from light and the shielded image sensor A dark signal is read and stored in the first storage means, and a light shielding leak is detected based on the dark signal, and when the light shielding leak is detected, information on the light shielding leak is displayed or the light shielding leak is displayed. This is a pixel defect detection method for an image sensor in which when a pixel defect is not detected, a pixel defect is detected based on the dark signal, and position information of the pixel defect is stored in a second storage means.

  According to the above method, when a light-blocking leak is detected when detecting a pixel defect, information on the light-blocking leak can be displayed. For example, pixel defect detection is performed in the state of a light-blocking leak due to a user's erroneous operation. The pixel defect can be detected with high accuracy.

  According to the present invention, it is possible to accurately detect pixel defects (including subsequent pixel defects) without depending on the ambient temperature.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a block diagram illustrating a configuration example of an imaging apparatus including a pixel defect detection apparatus for an imaging element according to an embodiment of the present invention.

  As shown in the figure, the imaging apparatus includes a photographing optical system 1 including a photographing lens, a driving motor and a driving mechanism for driving the photographing lens, a light shielding filter 2 capable of shielding the photographing optical system 1, and photographing optics. An optical subject image formed by the system 1 is photoelectrically converted to generate an image signal of the subject image, and a solid-state imaging device (hereinafter simply referred to as a CCD) 3 such as a CCD, and an image signal from the output signal of the CCD 3 AMP (gain control means) including a CDS circuit (correlated double sampling) 4 for extracting components and an AGC circuit for adjusting the output signal level of the CDS circuit 4 to a predetermined gain value. Amplifier) 5, an A / D converter 6 for converting an analog signal output from the AMP 5 into a digital signal, and a digital signal output from the A / D converter 6 are stored. A frame memory 7, a memory controller 8 for controlling the frame memory 7, a light-blocking leakage detection circuit 9 for detecting a light-blocking leakage when the CCD 3 is shielded by the light-shielding filter 2, and pixel defects (photoelectric conversion units) existing in the CCD 3. A defect detection circuit 10 for detecting an area defect), a defect memory 11 including an EEPROM or the like that stores an address (hereinafter also simply referred to as an address) of a frame memory 7 corresponding to a pixel defect existing in the CCD 3, and a presence in the CCD 3 A defect compensation circuit 12 that compensates (corrects) pixel defects to be corrected from other image signals, and an image signal processing circuit 13 that performs image processing such as γ correction and edge enhancement on the image signal that has been defect-compensated by the defect compensation circuit 12. Liquid crystal display (LCD) which is a display means including a signal processing circuit for processing an image signal into a displayable format 4, a DRAM 15 that is a device built-in storage means including a memory for temporarily storing image signals, a compression / decompression circuit 16 that performs compression processing and expansion processing on image signals, and a memory card that stores image signals Various trigger signals (instructions) such as a trigger switch for generating a trigger signal for starting the AF operation at the time of photographing and starting an exposure operation and generating a trigger signal for starting a later pixel defect detection process to be described later, and the medium 17 Signal), a temperature sensor unit 19 serving as temperature detecting means for detecting the temperature of the CCD 3, a cooling element 20 such as Peltier for cooling the CCD 3, and a driving pulse for the CCD 3. Timing generator (TG) 21 and signal generator for generating synchronization signals such as It is constituted by a motor (SG) 22 and the like.

  Each of the above components is electrically connected to a CPU 23 that is a control means, and the image pickup apparatus is comprehensively controlled by the CPU 23. The CCD 3 has an electronic shutter function (means) so that the exposure time can be controlled.

Next, control processing performed in the imaging apparatus having such a configuration will be described.
First, a photographing process will be described as an example of the control process. Here, of the photographing process, the process related to the present invention will be mainly described.

  In this photographing process, when a photographing instruction is given by the user via the operation unit 18, the subject image formed on the CCD 3 is photoelectrically converted into an electrical signal (image signal). The image signal obtained by the CCD 3 is extracted in the CDS circuit 4 and the output signal level is adjusted to a predetermined gain value in the AMP 5 and then converted into a digital signal in the A / D converter 6. The The image signal converted into the digital signal is temporarily stored in the frame memory 7. The image signal stored in the frame memory 7 is input to the defect compensation circuit 12, and in the defect compensation circuit 12, the pixel based on the address corresponding to the pixel defect existing in the CCD 3 and stored in the defect memory 11. The image signal related to the defect is corrected.

  The defect memory 11 stores in advance addresses corresponding to pixel defects detected in a state where the temperature of the CCD 3 is controlled at a constant temperature at the time of production of the imaging device or at the time of factory shipment. Even after that, the defect memory 11 additionally stores an address corresponding to the detected subsequent pixel defect by performing detection processing of the subsequent pixel defect described later in accordance with an instruction from the user.

  The address of the frame memory 7 corresponds to the position of each photoelectric conversion unit area of the CCD 3. Therefore, the address stored in the defective memory 11 is also position information. As a result, based on the address corresponding to the pixel defect stored in the defect memory 11, the image signal related to the pixel defect can be identified from the image signals stored in the frame memory 7, and the correction thereof can be performed. Become.

Here, an example of the correction process performed in the defect compensation circuit 12 will be described with reference to FIG.
FIG. 2 is a diagram schematically showing a part of the image signal input to the defect compensation circuit 12. In the figure, “defect” indicates an image signal (pixel) corresponding to the address of the pixel defect stored in the defect memory 11, and “normal” indicates another image signal (pixel).

  As indicated by the arrows in the figure, the defect compensation circuit 12 corrects the pixel defect by correcting the “defective” image signal based on the “normal” image signals on the top, bottom, left and right of the image signal. Is done. For example, the signal level (pixel value) of the “defective” image signal is replaced with the average value of the signal level (pixel value) of the “normal” image signal on the top, bottom, left and right.

  In addition to those shown in the figure, the “defective” image signal may be corrected based on the “normal” image signals above and below the image signal, or the left and right of the image signal may be corrected. The correction may be performed based on the “normal” image signal, or the correction may be performed by other methods.

  The image signal that has been defect-compensated in the defect compensation circuit 12 in this manner is then output to the LCD 14 via the image signal processing circuit 13 that performs image processing such as γ correction and edge enhancement, and is displayed and reproduced. Is done. Alternatively, the defect-compensated image signal is temporarily stored in the DRAM 15, compressed by the compression / decompression circuit 16, and recorded on the recording medium 17.

  The above is the shooting process from when the user gives a shooting instruction until image reproduction display or image recording. By such processing, the image signal related to the pixel defect is corrected, and an image having no image quality deterioration can be obtained.

  In addition, this imaging device prevents image quality deterioration due to pixel defects (later pixel defects) that occur later, such as pixel defects newly generated by cosmic rays when transported in the Arctic and Antarctic areas by air. Therefore, it has a function of detecting this subsequent pixel defect and additionally storing it in the defect memory 11.

Next, the detection process of the subsequent pixel defect related to the function will be described.
First, the subsequent pixel defect detection process according to the first embodiment will be described.
In the subsequent pixel defect detection process according to the present embodiment, the cooling element 20 may not be provided in the configuration of the imaging apparatus illustrated in FIG.

  When the detection process of the subsequent pixel defect according to the present embodiment is started, first, the photographing optical system 1 is automatically shielded by the shading filter 2, and the image signal (dark signal) is outputted by the CCD 3 in the shielded state. The obtained various signals are processed in the CDS circuit 4, AMP 5, and A / D 6 for the dark signal and stored in the frame memory 7. Then, the defect detection circuit 10 detects a pixel defect existing in the CCD 3 based on the dark signal read from the frame memory 7, and acquires its position information.

Here, processing performed in the defect detection circuit 10 will be described with reference to FIG.
FIG. 3 is a graph showing an example of a dark signal read from the frame memory 7. In the figure, the horizontal axis indicates the coordinate position of the photoelectric conversion unit area of the corresponding CCD 3, and the vertical axis indicates the signal level (same in FIGS. 4 and 5). Further, the dark signal shown in the figure shows a part of the dark signal read from the frame memory 7 (the same applies to FIGS. 4 and 5).

  As shown in FIG. 3, the defect detection circuit 10 detects a dark signal (pixel) that is equal to or higher than a predetermined pixel defect threshold level as a dark signal related to the pixel defect, and darkness related to the pixel defect. An address (also referred to as a defect address) in the frame memory 7 corresponding to the coordinate position where the signal is generated is acquired.

  In addition, the defect address acquired in this way is compared with the defect address already stored in the defect memory 11 (the address corresponding to the pixel defect stored at the time of factory shipment described above) and newly generated. Only the defective address corresponding to the subsequent pixel defect is additionally stored in the defect memory 11. As a result, it is possible to prevent image quality deterioration related to the subsequent pixel defect.

  However, in the detection of subsequent pixel defects, unlike the detection of pixel defects in which the temperature of the CCD 3 is controlled at a constant temperature, such as at the time of production or factory shipment, a wide range of usage environments for each user is assumed. There must be.

  For example, a subsequent pixel defect occurring in the CCD 3 is likely to be a pixel defect related to a temperature-dependent white defect caused by the dark current, and the operating environment temperature of the CCD 3 is lower than normal (normal temperature). In this case, the signal level of the dark signal related to the pixel defect becomes low, and the pixel defect cannot be detected with high accuracy, and the subsequent pixel defect may not be sufficiently compensated.

FIG. 4 is a diagram showing an example of a dark signal obtained when the operating environment temperature of the CCD 3 is low.
The example shown in the figure is an example in which the temperature of the CCD 3 is low because the operating environment temperature of the CCD 3 is low, and the signal level of the dark signal related to the pixel defect to be originally detected does not exceed the pixel defect threshold level. In such a case, there is a possibility that the subsequent pixel defect cannot be compensated.

On the other hand, it is known that an image pickup device such as the CCD 3 generates heat and increases in temperature during operation (during driving) due to an excessive load during charge transfer.
Therefore, in the detection process of the subsequent pixel defect, the CCD 3 is continuously operated until the output of the temperature sensor 19 for detecting the temperature of the CCD 3 reaches a target temperature suitable for detection of the subsequent pixel defect, and the target temperature is reached. Immediately thereafter, an image signal (dark signal) is taken from the light-shielded CCD 3 and processing is performed so as to detect pixel defects. Note that the addresses corresponding to the pixel defects stored in the defect memory 11 desirably correspond to the pixel defects detected when the temperature conditions of the CCD 3 are the same. It is desirable to set the temperature of the CCD 3 that was controlled when a pixel defect was detected at the time of production or factory shipment.

  Further, when detecting a subsequent pixel defect after operating the CCD 3 for a long time, the temperature of the CCD 3 may become higher than normal (normal temperature). There is a possibility that the level becomes higher as a whole and a pixel defect that is not originally a pixel defect is erroneously detected as a pixel defect. In this case, since the address corresponding to the erroneously detected address is stored in the defect memory 11, an extra correction process is performed by the defect compensation circuit 12, and image quality may be deteriorated. In addition, since an extra address is stored in the defective memory 11, the memory capacity may be exceeded.

FIG. 5 is a diagram showing an example of a dark signal obtained when the temperature of the CCD 3 is high.
In the example shown in the figure, since the temperature of the CCD 3 is high, the signal level of the dark signal relating to the pixel that is not defective does not exceed the pixel defect threshold level. There is a possibility that a non-pixel defect is erroneously detected as a pixel defect.

  Therefore, in the detection process of the subsequent pixel defect, when the temperature of the CCD 3 is higher than the target temperature, the operation of the CCD 3 is stopped without detecting the pixel defect as the pixel defect detection NG ( Processing is performed so as to lower the temperature of the CCD 3 by turning off the power of the CCD 3.

FIG. 6 is a flowchart showing an example of the detection process of the subsequent pixel defect in which the process as described above is performed.
As shown in the figure, first, in step S601, the power supply of the imaging apparatus is turned on.

In S602, the power source of the CCD 3 is turned on and the operation of the CCD 3 is started. Thereby, the temperature rise of the CCD 3 is started.
In step S <b> 603, the subsequent pixel defect capturing trigger signal is turned ON in response to a user operating a predetermined switch of the operation unit 18.

In S604, the light shielding filter 2 is turned on, and the light shielding filter 2 is automatically moved to the light shielding position. Thereby, the photographing optical system 1 and the CCD 3 are shielded from light.
In S <b> 605, the temperature of the CCD 3 is measured via the temperature sensor 19.

  In S606, it is determined whether or not the temperature of the CCD 3 measured in the previous step is equal to or higher than the target temperature. If the determination result is Yes, the process proceeds to S608, and if the determination result is No, the process proceeds to S607. . By such determination processing, pixel defects are not detected until the temperature of the CCD 3 reaches the target temperature.

In S607, an interval of N seconds is provided, and after the interval ends, the process returns to S605 again. As a result, the temperature of the CCD 3 is further increased.
In S608, it is determined whether or not the temperature of the CCD 3 measured in S605 is lower than the target temperature + T ° C. If the determination result is Yes, the process proceeds to S610, and if it is No, the process proceeds to S609. The process proceeds to. As a result of such determination processing, when the temperature of the CCD 3 becomes high (target temperature + T ° C. or higher), pixel defects are not detected.

  In S609, the pixel defect detection process is stopped, and this flow ends. As a result, when the temperature of the CCD 3 becomes high (target temperature + T ° C. or higher), it is possible to prevent a pixel defect that is not originally a pixel defect from being erroneously detected as a pixel defect. Further, in this step, the power of the CCD 3 may be turned off to lower the temperature of the CCD 3, and when the temperature of the CCD 3 becomes lower than the target temperature + T ° C., the processing after S610 may be performed.

  In S610, a still image is captured. That is, an image signal is acquired by the CCD 3, and the above-described various processes are performed in the CDS circuit 4, the AMP 5, and the A / D conversion unit 6 and stored in the frame memory 7. As a result, a dark signal of the light-shielded CCD 3 is acquired.

  In S611, the defect detection circuit 10 detects a pixel defect existing in the CCD 3 based on the dark signal read from the frame memory 7, and acquires an address corresponding to the pixel defect. That is, as described above, of the dark signals read from the frame memory 7, a dark signal having a signal level exceeding the pixel defect threshold level is detected as a dark signal related to the pixel defect. An address corresponding to the position of the photoelectric conversion unit area of the CCD 3 that has generated the dark signal is acquired.

  In S612, the address corresponding to the pixel defect acquired in the previous step is compared with the address already stored in the defect memory 11, and only the address corresponding to the newly generated pixel defect (subsequent pixel defect) is obtained. It is additionally stored in the defective memory 11.

In step S613, the subsequent pixel defect detection process ends.
As described above, by performing this flow, when the temperature of the CCD 3 is equal to or higher than the target temperature and lower than the target temperature + T ° C., the subsequent pixel defect is detected.

As described above, according to the present embodiment, it is possible to accurately detect the subsequent pixel defect without depending on the ambient temperature change.
Next, a process for detecting a subsequent pixel defect according to the second embodiment will be described.

The subsequent pixel defect detection process according to the present embodiment is a process suitable for an image pickup apparatus including a cooling unit for cooling the image pickup element such as a cooling CCD.
FIG. 7 is a flowchart showing an example of the subsequent pixel defect detection process according to the present embodiment.

As shown in the figure, first, in S701, the power supply of the imaging apparatus is turned on.
In S702, the power source of the CCD 3 is turned on and the operation of the CCD 3 is started.
In S703, the cooling element 20 such as Peltier is turned on. Thereby, the cooling of the CCD 3 is started.

In S <b> 704, the subsequent pixel defect capturing trigger signal is turned ON in response to a user operating a predetermined switch of the operation unit 18.
In S705, the light shielding filter 2 is turned on, and the light shielding filter 2 is automatically moved to the light shielding position. Thereby, the photographing optical system 1 and the CCD 3 are shielded from light.

In S <b> 706, the temperature of the CCD 3 is measured via the temperature sensor 19.
In S707, it is determined whether or not the temperature of the CCD 3 measured in the previous step is lower than the target temperature. If the determination result is Yes, the process proceeds to S709. If the determination result is No, the process proceeds to S708. . By such determination processing, the cooling of the CCD 3 is continued until the temperature of the CCD 3 becomes lower than the target temperature.

In S708, an interval of M seconds is provided, and after the interval ends, the process returns to S706 again. As a result, the CCD 3 is further cooled.
In S709, the cooling element 20 such as Peltier is turned off. Thereby, the cooling of the CCD 3 is stopped, and the temperature rise of the CCD 3 is started. The temperature rise of the CCD 3 is caused by the fact that the CCD 3 is turned on (operated and driven) as described above.

In S 710, the temperature of the CCD 3 is measured via the temperature sensor 19.
In S711, it is determined whether or not the temperature of the CCD 3 measured in the previous step is equal to or higher than the target temperature. If the determination result is Yes, the process proceeds to S713. If the determination result is No, the process proceeds to S712. . By such a determination process, pixel defects are not detected until the temperature of the CCD 3 becomes equal to or higher than the target temperature.

In S712, an interval of N seconds is provided, and the process returns to S710 again after the interval ends. As a result, the temperature of the CCD 3 is further increased.
In S713 to S715, the same processing as the processing in S609 to S611 (see FIG. 6) described above is performed.

In S716, the cooling element 20 such as Peltier is turned on again, the cooling of the CCD 3 is started, and the operation of the cooling element 20 at the normal time is returned to.
In S717, the subsequent pixel defect detection process ends.

  As described above, by performing this flow, first, the cooling element 20 is cooled until the temperature of the CCD 3 becomes lower than the target temperature, and then the cooling element is turned off to start the temperature increase of the CCD 3, and the CCD 3 Immediately after the temperature becomes equal to or higher than the target temperature, the subsequent pixel defect is detected.

  As described above, according to the present embodiment, since the temperature of the CCD 3 can be set to a constant temperature (substantially constant temperature) by performing the ON / OFF control of the cooling element 20, it is possible to detect subsequent pixel defects with higher accuracy. become. Further, the control of the cooling element 20 causes a problem that the pixel defect that should be detected cannot be detected because the CCD 3 described above with reference to FIG. 4 is at a low temperature. There is no.

  In this embodiment, instead of turning off the cooling element 20, the cooling target temperature of the CCD 3 set for the cooling element 20 may be changed (increased). For example, the cooling target temperature may be set to 10 ° C. when the cooling element is turned on, and the cooling target temperature may be changed to 25 ° C. when the cooling element is turned off.

Next, a third embodiment of the present invention will be described.
FIG. 8 is a diagram illustrating a configuration example of the imaging apparatus for a microscope according to the present embodiment.
Note that the microscope imaging apparatus according to the present embodiment includes a configuration having the same function as the configuration of the imaging apparatus shown in FIG. 1 (excluding the light shielding filter 2).

  In FIG. 8, the imaging apparatus for the microscope controls an electronic camera (camera head unit) 32 as an imaging unit that captures an observation image acquired by the microscope main body 31 and a control for controlling the entire apparatus including the electronic camera 32. A controller (CPU) 33 as a means is provided. The electronic camera 32 has a CCD 32 a, and an image signal output from the CCD 32 a is output to the CRT monitor 35 after various image processing is performed by the image processing device 34.

  The microscope body 31 includes a light source 36, a lens 37, a field stop 38, an aperture stop 39, a condenser lens 40, an objective lens 41, a tube lens 42, a beam splitter 43, an eyepiece 44, and the like. In the microscope main body 31 having such a configuration, the light emitted from the light source 36 is collected by the lens 37, passes through the field stop 38 and the aperture stop 39, and is condensed on the sample surface on the sample stage 45 by the condenser lens 40. . Further, the light transmitted through the sample surface enters the beam splitter 43 through the objective lens 41 and the tube lens 42, and is separated into two optical paths by the beam splitter 43. That is, one is incident on the eyepiece 44 and used for visual observation of the sample image, and the other is incident on the CCD 32 a of the electronic camera 32.

  Further, a member 43a is attached to the beam splitter 43, and the beam splitter 43 is moved when the user operates the member 43a in either direction of a double arrow A in FIG. Has been. Further, by moving the beam splitter 43 to a predetermined position in this way, the light incident on the beam splitter 43 is guided to only one of the CCD 32a and the eyepiece lens 44. Thereby, the member 43a is operated so that the light incident on the beam splitter 43 is guided only to the eyepiece lens 44, and the beam splitter 43 is moved to a predetermined position, so that the CCD 32a is in a light-shielded state. .

Subsequently, detection processing of the subsequent pixel defect performed in the microscope imaging apparatus having the above configuration will be described.
FIG. 9 is a flowchart illustrating an example of the detection process of the subsequent pixel defect.

As shown in the figure, first, in step S901, the power source of the microscope imaging apparatus is turned on.
In S902, the CCD 32a of the electronic camera 32 is turned on, and the operation of the CCD 32a is started.

  In S903, the member 43a is operated by the user, and the beam splitter 43 is moved to a position where the light incident on the beam splitter 43 is guided only to the eyepiece lens 44. Thereby, the CCD 32a of the electronic camera 32 is shielded from light.

In step S904, the subsequent pixel defect capturing trigger signal is turned ON in response to an instruction from the user.
In S905, an image signal (dark signal) is acquired by the light-shielded CCD 32a, and light-shielding leakage is detected based on this image signal. The detection of this light leakage is performed by the controller 33 in the same manner as the processing performed in the light leakage detection circuit 9 shown in FIG. This process will be described later with reference to FIG.

  In S906, it is determined whether or not a light shielding leak has been detected in the previous step. If the determination result is Yes, the process proceeds to S907, and if the determination result is No, the process proceeds to S908. As a result of such determination processing, the detection of the subsequent pixel defect is performed only when the light leakage is not detected.

  In S907, the processing after S605 shown in FIG. 6 or the processing after S706 shown in FIG. 7 is performed after the cooling of the CCD 32a is started by the configuration having the same function as the cooling element 20 shown in FIG. Then, the detection of the subsequent pixel defect is performed.

  In S908, in response to the detection of the light shielding leak in the step of S906, information regarding the light shielding leakage is displayed on the CRT monitor 35. For example, a message such as “Please check for shading” is displayed on the CRT monitor. Thereby, it is possible to prevent the subsequent pixel defect from being detected by performing the detection process of the subsequent pixel defect in a state where the light shielding of the CCD 32a is insufficient.

In S909, this flow ends.
As described above, when the light leakage of the CCD 32a is detected by performing this flow, the subsequent pixel defect is not detected and a display indicating that the light shielding state of the CCD 32a is insufficient is performed.

Next, the light shielding leakage detection process performed in S905 described above will be described with reference to FIG.
FIG. 10 is a diagram schematically showing an image signal obtained by the CCD 32a or the like corresponding to the pixel area (photoelectric conversion area) of the CCD 32a. In this example, the obtained image signal is described as 1024 pixels × 1360 pixels.

  In the above-described detection process of light shielding leakage in S905, a pixel region (K1 to K1 in the same figure) is formed from 64 pixels × 64 pixels arranged at equal intervals from the image signal obtained by the CCD 32a shown in FIG. A plurality of image signals (25 in the example in the figure) are extracted, and an average value of signal levels of the image signals of the respective pixels included therein is obtained in each pixel area. For example, the pixel area of K1 is included in the area determined by the range from the 96th pixel to the 160 (96 + 64) th pixel in the vertical direction and the horizontal direction from the 184th pixel to the 248th (184 + 64) th pixel. The average value of the signal level of the image signal of each pixel is obtained. The average values are similarly obtained for the other pixel regions K2 to K25. Then, the largest average value is extracted from the average values of the respective pixel areas thus obtained, and the largest average value is smaller than a preset light-shielding detection constant a (a> ( max (K1, K25))) is determined to have no light-shielded leakage, and when the light-shielding detection constant a is equal to or greater than (a <= (max (K1, K25))), processing is performed so as to determine that there is light-shielded leakage. Is called.

  As described above, according to the present embodiment, it is possible to prevent detection of the subsequent pixel defect in a state where light is leaked due to an erroneous operation by the user, and it is possible to detect the subsequent pixel defect with high accuracy.

  In the subsequent pixel defect detection processing according to the first and second embodiments, similarly to the processing according to the third embodiment, a light shielding leak is detected, and the light shielding leakage is not detected. However, it is also possible to detect subsequent pixel defects. By doing so, it is possible to prevent the subsequent pixel defect from being detected without the CCD 3 being sufficiently shielded from light due to the failure of the light shielding filter 2 or the like.

  As described above, the pixel defect detection device for an image sensor of the present invention, the detection method thereof, and the imaging device for a microscope have been described in detail, but the present invention is not limited to the above-described embodiment, and in a range not departing from the gist of the present invention, Of course, various improvements and changes may be made.

1 is a block diagram illustrating a configuration example of an imaging apparatus including a pixel defect detection apparatus for an imaging element according to an embodiment of the present invention. It is the figure which showed typically a part of image signal input into the defect compensation circuit. It is the graph which showed an example of the dark signal read from the frame memory. It is the figure which showed an example of the signal at the time of dark obtained when the operating environment temperature of CCD is low. It is the figure which showed an example of the dark signal obtained when the temperature of CCD was high. It is the flowchart which showed an example of the detection process of the subsequent pixel defect which concerns on 1st embodiment. It is the flowchart which showed an example of the detection process of the subsequent pixel defect which concerns on 2nd embodiment. It is the figure which showed the example of a structure of the imaging device for microscopes concerning 3rd embodiment. It is a flowchart which shows an example of the detection process of the subsequent pixel defect which concerns on 3rd embodiment. It is the figure which showed typically the image signal obtained by CCD etc. corresponding to the pixel area | region (photoelectric conversion area | region) of CCD.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Shooting optical system 2 Shading filter 3 CCD (solid-state image sensor)
4 CDS circuit (correlated double sampling circuit)
5 AMP (Amplifier)
6 A / D converter 7 Frame memory 8 Memory controller 9 Shading leakage detection circuit 10 Defect detection circuit 11 Defect memory 12 Defect compensation circuit 13 Image signal processing circuit 14 LCD
15 DRAM
16 Compression / Expansion Circuit 17 Recording Medium 18 Operation Unit 19 Temperature Sensor 20 Cooling Element 21 TG (Timing Generator)
22 SG (Signal Generator)
23 CPU
31 Microscope body 32 Electronic camera 32a CCD
33 controller 34 image processing device 35 CRT monitor 36 light source 37 lens 38 field stop 39 aperture stop 40 condenser lens 41 objective lens 42 tube lens 43 beam splitter 43a member 44 eyepiece 45 sample stage

Claims (2)

A camera including an image sensor that captures a specimen image;
A microscope including light shielding means for shielding light incident on the image sensor;
A control means for reading out a dark signal of the image pickup element shielded by the light shielding means and storing it in a first storage means;
Pixel defect detection means for detecting a pixel defect based on the dark signal;
Second storage means for storing position information of the pixel defect;
Detecting means for detecting a light leakage based on the dark signal;
Display means for displaying information on the light shielding leakage when the light shielding leakage is detected by the detection means;
An imaging apparatus for a microscope characterized by comprising: A pixel defect detection method of an image sensor applied to an imaging apparatus for a microscope,
The image sensor that captures the specimen image is shielded from light,
Read out the dark signal of the image sensor that has been shielded from light and store it in the first storage means;
Detecting light leakage based on the dark signal;
When the light shielding leak is detected, information on the light shielding leak is displayed, or when the light shielding leak is not detected, a pixel defect is detected based on the dark signal and position information of the pixel defect is displayed. Memorize it in two memory means,
A pixel defect detection method for an image sensor.

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