JP2008299208A - Method for manufacturing stereoscopic pattern of thick film resist - Google Patents

Method for manufacturing stereoscopic pattern of thick film resist Download PDF

Info

Publication number
JP2008299208A
JP2008299208A JP2007147088A JP2007147088A JP2008299208A JP 2008299208 A JP2008299208 A JP 2008299208A JP 2007147088 A JP2007147088 A JP 2007147088A JP 2007147088 A JP2007147088 A JP 2007147088A JP 2008299208 A JP2008299208 A JP 2008299208A
Authority
JP
Japan
Prior art keywords
resist
transparent substrate
thick film
pattern
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007147088A
Other languages
Japanese (ja)
Inventor
Hirofumi Kikuchi
広文 菊池
Noboru Yonetani
登 米谷
Koji Ogawa
浩二 小川
Kazunori Aoyanagi
和則 青柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2007147088A priority Critical patent/JP2008299208A/en
Publication of JP2008299208A publication Critical patent/JP2008299208A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a projecting stereoscopic pattern of a thick film resist having a perpendicular side wall while eliminating generation of a "footing" state. <P>SOLUTION: In Fig.(a), a resist 2 is applied on a transparent substrate 1, and a reflector 3 such as a metal film or a dielectric film is disposed on the back face of the transparent substrate 1. When the resist 2 in this state except for a portion to be the convex pattern is exposed by use of a stepper through a mask 4, exposure light partially reaches the transparent substrate 1 and is transmitted through the transparent substrate 1 and reflected by the reflector 3 as shown by arrows in the figure, and the reflected light partially reaches an unexposed portion of the resist to expose this portion. Thereby, the luminous energy of exposure in a portion which is conventionally in a "hemming bottom" state is increased to exceed a development threshold. As a result, by developing the resist 2, the "hemming bottom" portion shown by dashed lines in (b) is eliminated and the projecting stereoscopic pattern of the thick film resist having perpendicular side walls of the resist 2 is formed as shown by a hatching in Fig.(b). <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、側壁が垂直な凸状の厚膜レジスト立体パターンの製造方法に関するものである。なお、本明細書及び特許請求の範囲において「厚膜」とは、膜厚が10μm以上であることを意味する。   The present invention relates to a method for producing a convex thick film resist three-dimensional pattern having a vertical sidewall. In the present specification and claims, the term “thick film” means that the film thickness is 10 μm or more.

近年、光通信分野、医療関連分野、コンピュータ関連分野、計測関連分野等において、微細立体形状素子の需要が高まって来ている。従来は、このような微細立体形状素子を製造するには、機械加工により母型を製造し、この母型を用いて電鋳形を製造し、さらに電鋳型を用いて射出成型等により、微細立体形状素子を製造する方法が一般的であった。   In recent years, there has been an increasing demand for fine three-dimensional elements in the fields of optical communication, medical, computer, and measurement. Conventionally, in order to manufacture such a fine three-dimensional element, a mother mold is manufactured by machining, an electroformed mold is manufactured by using this mother mold, and further, by injection molding using an electromold, A method of manufacturing a three-dimensional element has been common.

しかしながら、より形状が複雑で微細な微細立体形状素子が必要となるにつれ、このような機械加工を用いて母型を製造する方法では対応が困難になり、これに変わって、フォトリソグラフィ技術を利用して膜厚レジストで立体形状を形成し、これを母型として用いる方法が採用されるようになってきている。   However, as a more complicated and finer micro three-dimensional shape element is required, it becomes difficult to cope with the method of manufacturing the mother die using such machining, and instead, photolithography technology is used. Thus, a method of forming a three-dimensional shape with a film thickness resist and using this as a matrix has been adopted.

その方法の例を図2に示す。図2(a)に示すように、基板11の上に塗布したレジスト12に、ステッパのマスク13を通して露光光を照射し、凸型パターンとなる以外の部分を感光させる(レジストはポジ形としている)。そして、このレジスト12を現像すると、図2(b)に示すように、基板11の上に、凸形状のレジスト12の立体パターンが形成される。   An example of the method is shown in FIG. As shown in FIG. 2A, the resist 12 coated on the substrate 11 is irradiated with exposure light through a mask 13 of a stepper to expose portions other than the convex pattern (the resist is positive). ). When the resist 12 is developed, a three-dimensional pattern of the convex resist 12 is formed on the substrate 11 as shown in FIG.

しかしながら、このような凸形状のレジスト立体パターンの製造方法においては、レジストの膜厚が厚い場合に、レジスト立体パターンの側面が、図2(b)の破線で示すように垂直とならず、図2(b)のハッチングで示すように、露光光の入射方向と逆側の部分で現像したときに溶解しない部分が発生し、いわゆる「すそ引き」状態となるという問題点があった。   However, in such a method of manufacturing a convex resist three-dimensional pattern, when the resist film is thick, the side surface of the resist three-dimensional pattern is not vertical as shown by the broken line in FIG. As shown by hatching 2 (b), there is a problem that a portion that does not dissolve is generated in the portion opposite to the incident direction of the exposure light, resulting in a so-called “soaking” state.

この原因は、露光光がレジスト12を通過するときに、進行するに従って減衰することにあると考えられる。その際、露光されない部分から遠い部分では、隣の光線の散乱光が入射するために減衰が小さいが、露光されない部分に近い部分では、露光されない部分からの散乱光が無いので減衰が大きくなり、結局、現像の閾値を超える光の到達する範囲が図2(a)に矢印で示すようになり、その結果、「すそ引き」状態が発生するものである。   This is considered to be because the exposure light attenuates as it travels through the resist 12. At that time, in the portion far from the non-exposed portion, the attenuation is small because the scattered light of the adjacent light beam is incident, but in the portion close to the non-exposed portion, there is no scattered light from the non-exposed portion, so the attenuation becomes large, Eventually, the range in which light exceeding the development threshold reaches is indicated by an arrow in FIG. 2 (a), and as a result, a "slipping" state occurs.

従来は、この問題を解消するために、露光に用いるステッパのフォーカス位置、露光量の最適化を試みると共に、現像液の最適化、現像時間の最適化を試みてきた。しかし、レジストの膜厚が厚くなるほど、レジストのγ特性に応じて「すそ引き」が大きくなることが避けられず、側壁を垂直にすることは不可能であった。   Conventionally, in order to solve this problem, an attempt has been made to optimize the focus position and exposure amount of a stepper used for exposure, as well as to optimize the developer and the development time. However, the larger the resist film thickness, the more inevitably the “soaking” becomes larger depending on the γ characteristics of the resist, and it is impossible to make the side walls vertical.

本発明はこのような事情に鑑みてなされたもので、「すそ引き」状態の発生を解消し、側壁が垂直な凸状の厚膜レジスト立体パターンの製造方法を提供することを課題とする。   The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a method for producing a convex thick film resist three-dimensional pattern that eliminates the occurrence of a “soaking” state and that has a vertical sidewall.

前記課題を解決するための第1の手段は、側壁が垂直な凸状の厚膜レジスト立体パターンの製造方法であって、透明基板の上に塗布したレジストを感光させるに際し、前記透明基板の裏面(レジストが塗布されている面と反対側の面をいう)から反射した光を、前記レジストの感光に寄与させる工程を有することを特徴とするレジスト立体パターンの製造方法である。   A first means for solving the above-described problem is a method for producing a convex thick film resist three-dimensional pattern having a vertical sidewall, and the back surface of the transparent substrate is exposed when the resist applied on the transparent substrate is exposed. A method for producing a resist three-dimensional pattern, comprising a step of causing light reflected from (a surface opposite to a surface coated with a resist) to contribute to photosensitivity of the resist.

前記課題を解決するための第2の手段は、前記第1の手段であって、前記透明基板の裏面に、表面側から入射する光を反射する反射体を設けたことを特徴とするものである。   The second means for solving the problem is the first means, characterized in that a reflector for reflecting light incident from the front side is provided on the back surface of the transparent substrate. is there.

本発明によれば、「すそ引き」状態の発生を解消し、側壁が垂直な凸状の厚膜レジスト立体パターンの製造方法を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, generation | occurrence | production of a "soaking" state can be eliminated and the manufacturing method of the convex thick film resist solid pattern with a perpendicular | vertical side wall can be provided.

以下、本発明の実施の形態の例を、図を用いて説明する。図1は、本発明の実施の形態の1例である厚膜レジスト立体パターンの製造方法の概要を説明するための図である。図1(a)において、透明基板1の上に膜厚10μm以上のレジスト2が塗布され、透明基板1の裏面には、金属膜、誘電体多層膜等の反射体3が設けられている。   Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram for explaining an outline of a manufacturing method of a thick film resist three-dimensional pattern which is an example of an embodiment of the present invention. In FIG. 1A, a resist 2 having a thickness of 10 μm or more is applied on a transparent substrate 1, and a reflector 3 such as a metal film or a dielectric multilayer film is provided on the back surface of the transparent substrate 1.

このような状態でステッパを使用し、マスク4を通して、凸系パターンとなる部分以外のレジスト2を露光すると、露光光のうちの一部が透明基板1にまで達し、透明基板1を透過して矢印で示すように反射体3で反射され、そのうちの一部が露光されない部分に達してこの部分を露光する。   In such a state, when the stepper is used and the resist 2 other than the portion that becomes the convex pattern is exposed through the mask 4, a part of the exposure light reaches the transparent substrate 1 and is transmitted through the transparent substrate 1. As indicated by the arrow, the light is reflected by the reflector 3, and a part of the light reaches a part that is not exposed, and this part is exposed.

よって、従来「すそ引き」状態となっていた部分の露光量が増して現像の閾値を超え、その結果、レジスト2を現像すると、図2(b)に破線で示す「すそ引き」部分が無くなって、図2(b)にハッチングで示すように、レジスト2の側壁が垂直な凸状のレジストの立体パターンが形成される。   Therefore, the exposure amount of the portion that has been in the “slipping” state is increased and exceeds the development threshold value. As a result, when the resist 2 is developed, the “slipping” portion indicated by the broken line in FIG. Thus, as shown by hatching in FIG. 2B, a three-dimensional pattern of a convex resist in which the side wall of the resist 2 is vertical is formed.

なお、この実施の形態においては、透明基板1の裏側に反射体3を設けているが、透明基板1の裏側表面自体からの反射光で目的が達成される場合には、あえて、反射体3を設ける必要は無い。   In this embodiment, the reflector 3 is provided on the back side of the transparent substrate 1. However, when the object is achieved by the reflected light from the back side surface of the transparent substrate 1, the reflector 3 is deliberately used. There is no need to provide.

反射体3を構成する金属膜としては、Cr膜、Al膜等が使用でき、誘電体の多層膜としては、SiOとTiOとを交互に積層して構成された反射膜等が使用できる。 As the metal film constituting the reflector 3, a Cr film, an Al film, or the like can be used, and as the dielectric multilayer film, a reflective film formed by alternately laminating SiO 2 and TiO 2 can be used. .

本発明の実施の形態の1例である厚膜レジスト立体パターンの製造方法の概要を説明するための図である。It is a figure for demonstrating the outline | summary of the manufacturing method of the thick film resist solid pattern which is an example of embodiment of this invention. 従来の、フォトリソグラフィ技術を利用して膜厚レジストで立体形状を形成する方法を説明するための図である。It is a figure for demonstrating the conventional method of forming a three-dimensional shape with a film thickness resist using a photolithographic technique.

符号の説明Explanation of symbols

1…透明基板、2…レジスト、3…反射体、4…マスク DESCRIPTION OF SYMBOLS 1 ... Transparent substrate, 2 ... Resist, 3 ... Reflector, 4 ... Mask

Claims (2)

側壁が垂直な凸状の厚膜レジスト立体パターンの製造方法であって、透明基板の上に塗布したレジストを感光させるに際し、前記透明基板の裏面(レジストが塗布されている面と反対側の面をいう)から反射した光を、前記レジストの感光に寄与させる工程を有することを特徴とする厚膜レジスト立体パターンの製造方法。   A method for producing a convex thick film resist three-dimensional pattern with vertical sidewalls, wherein when the resist coated on the transparent substrate is exposed, the back surface of the transparent substrate (the surface opposite to the surface coated with the resist) A method of producing a thick resist pattern having a step of contributing to the photosensitivity of the resist. 請求項1に記載のレジスト立体パターンの製造方法であって、前記透明基板の裏面に、表面側から入射する光を反射する反射体を設けたことを特徴とする厚膜レジスト立体パターンの製造方法。   2. The method for producing a resist solid pattern according to claim 1, wherein a reflector for reflecting light incident from the front surface side is provided on the back surface of the transparent substrate. .
JP2007147088A 2007-06-01 2007-06-01 Method for manufacturing stereoscopic pattern of thick film resist Pending JP2008299208A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007147088A JP2008299208A (en) 2007-06-01 2007-06-01 Method for manufacturing stereoscopic pattern of thick film resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007147088A JP2008299208A (en) 2007-06-01 2007-06-01 Method for manufacturing stereoscopic pattern of thick film resist

Publications (1)

Publication Number Publication Date
JP2008299208A true JP2008299208A (en) 2008-12-11

Family

ID=40172758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007147088A Pending JP2008299208A (en) 2007-06-01 2007-06-01 Method for manufacturing stereoscopic pattern of thick film resist

Country Status (1)

Country Link
JP (1) JP2008299208A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010164943A (en) * 2008-12-19 2010-07-29 Tokyo Ohka Kogyo Co Ltd Processed substrate and method for manufacturing the same
CN102436150A (en) * 2011-12-15 2012-05-02 深圳市华星光电技术有限公司 Exposure device and exposure method
CN102591156A (en) * 2011-12-05 2012-07-18 深圳市华星光电技术有限公司 Exposure device and exposure method
CN103576469A (en) * 2013-11-19 2014-02-12 四川虹视显示技术有限公司 Photoresist exposure device
CN109557772A (en) * 2019-01-18 2019-04-02 昆山国显光电有限公司 A kind of exposure device and exposure method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010164943A (en) * 2008-12-19 2010-07-29 Tokyo Ohka Kogyo Co Ltd Processed substrate and method for manufacturing the same
US9017932B2 (en) 2008-12-19 2015-04-28 Tokyo Ohka Kogyo Co., Ltd. Processed substrate and method for manufacturing same
KR101537117B1 (en) * 2008-12-19 2015-07-15 도쿄 오카 고교 가부시키가이샤 Pr0cessed substrate and method for manufacturing same
CN102591156A (en) * 2011-12-05 2012-07-18 深圳市华星光电技术有限公司 Exposure device and exposure method
CN102591156B (en) * 2011-12-05 2015-05-20 深圳市华星光电技术有限公司 Exposure device and exposure method
CN102436150A (en) * 2011-12-15 2012-05-02 深圳市华星光电技术有限公司 Exposure device and exposure method
CN103576469A (en) * 2013-11-19 2014-02-12 四川虹视显示技术有限公司 Photoresist exposure device
CN109557772A (en) * 2019-01-18 2019-04-02 昆山国显光电有限公司 A kind of exposure device and exposure method
CN109557772B (en) * 2019-01-18 2021-01-05 昆山国显光电有限公司 Exposure device and exposure method

Similar Documents

Publication Publication Date Title
US7794225B2 (en) Fine mold and method for regenerating fine mold
JP4647545B2 (en) Manufacturing method of wire grid polarizer
KR101333899B1 (en) Multi-gray scale photomask, manufacturing method of multi-gray scale photomask, pattern transfer method, and manufacturing method of thin film transistor
JP2008032912A (en) Method of manufacturing microlens
JP2008299208A (en) Method for manufacturing stereoscopic pattern of thick film resist
CN103309168B (en) Reflective lithography masks and systems and methods
JP2007305972A (en) Method of setting exposure conditions and method of manufacturing semiconductor device
JP2009175707A (en) Method of producing fine structure
JP2000199968A (en) Multilayered resist structure and manufacture of three- dimensional fine structure using the same
TW202034022A (en) Diffusion plate
JP5441148B2 (en) RESIST LAMINATED STRUCTURE AND METHOD FOR FORMING RESIST PATTERN
JP2006251318A (en) Manufacturing method of member having antireflective structure
JP2005215644A (en) Optical module and its manufacturing method
JP2013104960A (en) Photomask and exposure method
US7807323B2 (en) Exposure condition setting method, semiconductor device manufacturing method, and exposure condition setting program
JP2009075207A (en) Photomask and pattern formation method using the same
TW200406593A (en) Projection optical system and exposure device equipped with the projection optical system
KR20090010746A (en) Method for manufacturing of semiconductor device
KR101061357B1 (en) Photo mask
JP2009020381A (en) Method for manufacturing reflection screen and reflection screen
JP2012068296A (en) Photo mask and pattern formation method using the same
JP2012194554A (en) Photomask, pattern transfer method, and pellicle
JP2006292840A (en) Exposure method and halftone phase shift mask
US7608370B2 (en) Exposure mask and method for manufacturing semiconductor device using the same
JP2006039591A (en) Method for forming pattern