JP2008288455A - Method for packaging semiconductor device and semiconductor device packaging product - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of packaging a semiconductor device which can efficiently package the semiconductor device while effectively maintaining the attaching accuracy of the semiconductor device to a circuit board without using a back grind tape. <P>SOLUTION: The semiconductor device packaging method comprises: a resin layer forming process for forming a resin layer composed of a thermoplastic resin composition on one surface, on which a plurality of electrode patterns are formed, of a silicon wafer substrate configured by forming the plurality of electrode patterns on one surface; a wafer polishing process for polishing the surface of the silicon wafer substrate which is the opposite surface of the surface on which the resin layer is formed; a dicing process for dicing the polished silicon wafer substrate forming the plurality of electrode patterns on one surface in each electrode pattern to obtain a plurality of semiconductor devices; and a semiconductor device packaging process for packaging the semiconductor device on a circuit board by sticking the resin layer forming surface of the semiconductor device obtained by dicing to the circuit board. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a mounting method of a semiconductor device and a semiconductor device mounting product obtained by using the mounting method.

  As various electronic components become smaller, lighter, and more integrated, semiconductor components used are becoming thinner. Conventionally, thinning a semiconductor component assembly (a silicon wafer substrate having a plurality of electrode patterns formed on one surface thereof) is performed by forming a plurality of circuits and bumps (electrode patterns) on the silicon wafer, This is done by cutting the opposite surface of the formed surface (back grinding). The silicon wafer substrate thinned by the back grinding is pasted on a dicing tape, and then diced into individual electrode patterns to form a plurality of semiconductor chips. The obtained semiconductor chip is flip-chip connected to the circuit board, and the connecting portion is filled with a sealing material. Through these steps, an electronic component is obtained.

  At the time of the back grinding, it is common to apply a back grind tape to prevent the attachment of cutting fluid or cutting chips to the electrode forming surface of the semiconductor component assembly, and the back grind tape is applied to the surface of the semiconductor component assembly. After the semiconductor component assembly is cut (diced), the back grind tape is peeled off and discarded.

  In the semiconductor device mounting method described above, since the back grind tape must be disposed of, there is a concern that it may cause environmental pollution. Further, it is necessary to use a peeling tape when using the back grind tape. In addition, since an ultraviolet curable resin is used for the back grind tape, an ultraviolet irradiation process is necessary, and therefore, there are problems that many processes are required.

  Further, in the manufacture of the electronic components described above, after the back surface of the silicon wafer (semiconductor component assembly) having a plurality of wiring patterns formed on the surface is thinned by back grinding, the semiconductor component assembly is diced individually. The formed semiconductor device is flip-chip mounted on a circuit board. At this time, in order to ensure connection reliability after mounting and insulation between the wirings, it is common to fill the gap between the semiconductor device and the circuit board with a liquid resin composition and seal it. However, in recent years, with the integration of parts, the wiring has been made thinner, and it has become difficult to fill the resin composition for sealing filling, and the sealing filler composition has been applied to the substrate in advance. The way to keep it under consideration.

  Conventionally, in order to satisfy the above-mentioned problems, the two purposes of protection at the time of back grinding and the connection sealant are simultaneously adhered to a semiconductor component assembly in advance with a film having the characteristics of a sealing material. Have been proposed (see Patent Document 1).

JP 2001-332520 A

  However, since the resin composition used in the method disclosed in Patent Document 1 is a thermosetting resin composition, it is inferior in stability and has a high elastic modulus. There is a problem. Further, in flip chip mounting in which the thermosetting resin composition is arranged first, there is a need to improve the reactivity of the thermosetting resin in order to cure the sealing filler composition at the time of bonding and suppress void generation. However, on the other hand, in order to maintain the stability at the time of back grinding, the reactivity of the sealing filler composition must be lowered, and there is a problem that a long time is required for joining. Moreover, according to the said patent document 1, although the epoxy resin composition is used as a general material of a thermosetting resin composition, it is used for the epoxy resin powder used for that, and also viscosity adjustment. There is a problem that the transparency of the resin composition is lowered due to the filler. If the transparency of the encapsulant composition is lowered, there arises a problem that alignment mark recognizability at the time of dicing or flip chip mounting is hindered, and this visual accuracy becomes insufficient unless a special device is used. .

  The present invention has been made in view of the above-mentioned conventional problems, and the problem is that the mounting of the semiconductor device to the circuit board without using a back grind tape that requires disposal is required. An object of the present invention is to provide a semiconductor device mounting method and a semiconductor device mounted product that can be efficiently implemented while maintaining good accuracy.

  As a result of diligent studies to solve the above problems, a function of protecting a semiconductor electronic component assembly (wafer) at the time of back grinding and a sealing filler function at the time of flip chip mounting on the substrate of the semiconductor electronic component (semiconductor chip) It has been found that by using a thermoplastic resin composition having both of the above and the like, the back grinding of the wafer can be satisfactorily performed and the process for mounting the chip on the substrate can be simplified. The present invention has been made based on such findings.

  That is, in the method for mounting a semiconductor device according to the present invention, a resin layer made of a thermoplastic resin composition is formed on one side of a silicon wafer substrate on which one of the electrode patterns is formed. A resin layer forming step, a wafer polishing step for polishing the surface of the silicon wafer substrate opposite to the surface on which the resin layer is formed, and a plurality of electrode patterns formed on one side of the polished silicon wafer substrate A dicing process for obtaining a plurality of semiconductor devices by dicing each time, and mounting the semiconductor device on the circuit board by adhering the surface on which the resin layer of the semiconductor device obtained by the dicing is formed on the circuit board And a semiconductor device mounting step.

  The semiconductor device mounting method according to the present invention having the above configuration is suitable when the circuit board is a flexible wiring board.

  A semiconductor mounted product according to the present invention is obtained by using the semiconductor device mounting method of the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, in the manufacturing process of a semiconductor device, back grinding tape sticking, reduction of a peeling process, reduction of a back grinding tape material can be performed, and the manufacturing process of a semiconductor device mounting product can be simplified greatly. Further, by using a thermoplastic resin composition suitable for a sealing filler for mounting a semiconductor device, the flip chip bonding time can be greatly shortened, and the manufacturing process of the semiconductor device mounted product can be greatly shortened.

Hereinafter, the present invention will be described in detail with reference to preferred embodiments thereof.
The thermoplastic resin composition suitable for the sealing filler for mounting a semiconductor device used in the present invention may be in any form as long as it can be applied to or pasted onto a semiconductor electronic component assembly.
Moreover, as this thermoplastic resin composition, at least 1 type of thermoplastic resin is included. Examples of the thermoplastic resin include polyolefin, polyvinylidene fluoride, polyester, polyacrylonitrile, polystyrene, polyamide, polyimide, polyphenylene, and the like. Any type of resin can be used. These thermoplastic resins can be used singly or in combination of two or more according to use conditions, for example, use temperature.

  When forming the thermoplastic resin on the semiconductor substrate, the thermoplastic resin may be formed in the form of a film in advance, or may be formed by applying and drying a solution dissolved in a soluble solvent.

  Among the thermoplastic resins, particularly, low temperature curing (˜200 ° C.), low warpage of a circuit board on which a cured thin film is formed, heat resistance of a cured film (5% weight loss temperature), insulation and low water absorption. From the viewpoint of superiority, a polyimide represented by the following general formula (1) is preferable.

（式（１）中、Ａｒ^１は４価の有機基を示し、Ａｒ^２は２価の有機基を示す。ｌは１以上の整数である。）

(In Formula (1), Ar ¹ represents a tetravalent organic group, Ar ² represents a divalent organic group, and l is an integer of 1 or more.)

  When the thermoplastic resin is formed on a semiconductor substrate using a solution, the polyimide is difficult to dissolve in a solvent. Therefore, as a polyamic acid that is a precursor of a polyimide represented by the following general formula (2) that can be dissolved, It is preferable to apply and dry and then form a polyimide by a ring-closing reaction by heating.

（式（２）中、Ａｒ^３は４価の有機基を示し、Ａｒ^４は２価の有機基を示す。ｌは１以上の整数である。）

(In Formula (2), Ar ³ represents a tetravalent organic group, Ar ⁴ represents a divalent organic group, and l is an integer of 1 or more.)

  The polyamic acid represented by the general formula (2) can be obtained by reacting (A) a tetracarboxylic dianhydride component with (B) a diamine component.

  Examples of the (A) tetracarboxylic dianhydride component include pyromellitic dianhydride, 1,2,3,4-benzenetetracarboxylic anhydride, 1,2,3,4-cyclobutanetetracarboxylic acid. Anhydride, 1,2,4,5-cyclopentanetetracarboxylic anhydride, 1,2,4,5-cyclohexanetetracarboxylic anhydride, 2,3,5-tricarboxycyclopentylacetic acid dianhydride, 3, 3 ', 4,4'-bicyclohexyltetracarboxylic anhydride, 3,3', 4,4'-biphenyltetracarboxylic anhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic acid anhydride, 3,3 ′, 4,4′-benzophenone tetracarbonate Rubonic dianhydride, 3,3 ′, 4,4′-biphenyl ether tetracarboxylic anhydride (4,4′-oxydiphthalic dianhydride), 2,3 ′, 4,4′-diphenyl ether tetracarboxylic acid Dianhydride, 3,3 ′, 4,4′-diphenylsulfonetetracarboxylic dianhydride, 2,3,3 ′, 4′-diphenylsulfonetetracarboxylic anhydride, 2,3,6,7-naphthalene Tetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-anthracenetetracarboxylic Acid dianhydride, 1,2,7,8-phenanthrenetetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 2,2-bis [4- (3 4-dicarboxy Nzoyloxy) phenyl] nonane dianhydride, 2,2-bis [4- (3,4-dicarboxybenzoyloxy) phenyl] decane dianhydride, 2,2-bis [4- (3,4-dicarboxybenzoyl) Oxy) phenyl] tridecane dianhydride, 2,2-bis [4- (3,4-dicarboxybenzoyloxy) phenyl] tetradecane dianhydride, 2,2-bis [4- (3,4-dicarboxybenzoyl) Oxy) phenyl] pentadecane dianhydride, 1,1-bis [4- (3,4-dicarboxybenzoyloxy) phenyl] -2-methyldecane dianhydride, 1,1-bis [4- (3,4- Dicarboxybenzoyloxy) phenyl] -2-methyloctane dianhydride, 1,1-bis [4- (3,4-dicarboxybenzoyloxy) phenyl] -2-e Rupentadecane dianhydride, 2,2-bis [3,5-dimethyl-4- (3,4-dicarboxybenzoyloxy) phenyl] dodecane dianhydride, 2,2-bis [3,5-dimethyl-4 -(3,4-dicarboxybenzoyloxy) phenyl] decane dianhydride, 2,2-bis [3,5-dimethyl-4- (3,4-dicarboxybenzoyloxy) phenyl] tridecane dianhydride, 2 , 2-bis [3,5-diethyl-4- (3,4-dicarboxybenzoyloxy) phenyl] pentadecane dianhydride, 1,1-bis [4- (3,4-dicarboxybenzoyloxy) phenyl] Cyclohexane dianhydride, 1,1-bis [4- (3,4-dicarboxybenzoyloxy) phenyl] propylcyclohexane dianhydride, 1,1-bis [4- (3,4-di Carboxybenzoyloxy) phenyl] heptylcyclohexane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) tetrafluoropropane dianhydride, 4,4-bis (2,3-dicarboxyphenoxy) diphenylmethane dianhydride Thing etc. are mentioned. These are used alone or in combination of two or more.

  Examples of the (B) diamine component include 4,4′-diaminodiphenylmethane, 3,3′-dimethyl-4,4′-diaminodiphenylmethane, 3,3 ′, 5,5′-tetramethyl-4,4. '-Diaminodiphenylmethane, 3,3', 5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-diethyl-4,4'-diaminodiphenylmethane, 4,4 '-Tylene bis (cyclohexylamine), 3,3'-dimethyl-4,4'-diaminodicyclohexylmethane, 3,3'-dimethoxy-4,4'-diaminodiphenylmethane, 3,3'diethoxy-4,4'- Diaminodiphenylmethane, bis (3-aminophenyl) ether, bis (4-aminophenyl) ether, 3,4'-diaminodiphenyl Ether, 3,3′-diethyl-4,4′-diaminodiphenyl ether, 3,3′-dimethoxy-4,4′-diaminodiphenyl ether, bis [4- (4-aminophenoxy) phenyl] ether, 3,3 ′ -Dimethyl-4,4'-diaminodiphenyl sulfone, 3,3'-diethyl-4,4'-diaminodiphenyl sulfone, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfone, 3,3'-diethoxy -4,4'-diaminodiphenylsulfone, 3,3'-dimethyl-4,4'-diaminodiphenylpropane, 3,3'-diethyl-4,4'-diaminodiphenylpropane, 3,3'-dimethoxy-4 , 4′-diaminodiphenylpropane, 3,3′-diethoxy-4,4′-diaminodiphenylpropane, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 1,3-bis (4-aminophenyl) propane, 2,2-bis (4-aminophenyl) propane, 4,4′-diaminodiphenyl sulfide, 3, 3'-dimethyl-4,4'-diaminodiphenyl sulfide, 3,3'-diethyl-4,4'-diaminodiphenyl sulfide, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfide, 3,3 ' -Diethoxy-4,4'-diaminodiphenyl sulfide, 2,2'-diaminodiethyl sulfide, 2,4'-diaminodiphenyl sulfide, m-phenylenediamine, p-phenylenediamine, 1,3-bis (4-aminophenoxy) ) Benzene, 1,2-bis (4-aminophenyl) ethane, 1,2-bis (4-aminophenyl) ethane Tan, bis (3-aminophenyl) sulfone, bis (4-aminophenyl) sulfone, o-toluidinesulfone, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl ] Sulfone, 4,4′-diaminodibenzyl sulfoxide, bis (4-aminophenyl) diethylsilane, bis (4-aminophenyl) diphenylsilane, bis (4-aminophenyl) ethylphosphine oxide, bis (4-aminophenyl) ) Phenylphosphine oxide, bis (4-aminophenyl) -N-phenylamine, bis (4-aminophenyl) -N-methylamine, 1,2-diaminonaphthalene, 1,4-diaminonaphthalene, 1,5-diamino Naphthalene, 1,6-diaminonaphthalene, 1,7-diaminonaphth Len, 1,8-diaminonaphthalene, 2,3-diaminonaphthalene, 2,6-diaminonaphthalene, 1,4-diamino-2-methylnaphthalene, 1,5-diamino-2-methylnaphthalene, 1,3-diamino 2-phenylnaphthalene, 9,9-bis (4-aminophenyl) fluorene, 4,4′-diaminobiphenyl, 3,3′-diaminobiphenyl, 3,3′-dihydroxy-4,4′-diaminobiphenyl, 3,3′-dichloro-4,4′-diaminobiphenyl, 3,3′-dimethyl-4,4′-diaminobiphenyl, 3,4′-dimethyl-4,4′-diaminobiphenyl, 3,3′- Dimethoxy-4,4′-diaminobiphenyl, 4,4′-bis (4-aminophenoxy) biphenyl, 2,4-diaminotoluene, 2,5-diamino Toluene, 2,6-diaminotoluene, 3,5-diaminotoluene, 1-methoxy-2,4-diaminobenzene, 1,3-diamino-4,6-dimethylbenzene, 1,4-diamino-2,5- Dimethylbenzene, 1,4-diamino-2-methoxy-5-methylbenzene, 1,4-diamino-2,3,5,6-tetramethylbenzene, 1,4-bis (2-methoxy-4-aminopentyl) ) Benzene, 1,4-bis (1,1-dimethyl-5-aminopentyl) benzene, 1,4-bis (4-aminophenoxy) benzene, o-xylenediamine, m-xylenediamine, p-xylenediamine, 9,10-bis (4-aminophenyl) anthracene, 3,3′-diaminobenzophenone, 4,4′-diaminobenzophenone, 4-aminophenyl- 3-aminobenzoate, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2- (3-aminophenyl) -2- (4-amino) Phenyl) hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 1,1-bis ( 4-aminophenyl) -1-phenyl-2,2,2-trifluoroethane, 1,1-bis [4- (4-aminophenoxy) phenyl] -1-phenyl-2,2,2-trifluoroethane 1,3-bis (3-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenyl) decafluoropropane, 2,2-bis (3- Mino-4-hydroxyphenyl) hexafluoropropane, 2,2-bis (3-amino-4-methylphenyl) hexafluoropropane, 2,2-bis (5-amino-4-methylphenyl) hexafluoropropane, 1 , 4-bis (3-aminophenyl) but-1-ene-3-yne and the like. These are used alone or in combination of two or more.

  Here, if the main chain of either (A) the tetracarboxylic dianhydride component or (B) diamine component contains an alkylene chain having 5 to 20 carbon atoms, the low-temperature curability of the resin composition, The flexibility of the cured film, the low water absorption, and the low warpage of the circuit board on which the cured film is formed can be realized. When the water absorption is high, it becomes a factor that the migration resistance is lowered. Therefore, it is preferable that the resin composition after thermosetting has a low water absorption.

  In addition, heat resistance is improved by including an alicyclic hydrocarbon group and / or aromatic group in the main chain of either or both of the (A) tetracarboxylic dianhydride component and (B) diamine component. it can.

  Moreover, it is preferable that the polyamic acid used for the method of the present invention does not contain an ether bond such as a polyalkyleneoxy group. The ether bond is fragile at high temperatures, which causes a decrease in the heat resistance (5% weight loss temperature) of the resin. Furthermore, when it has an ether bond, it is easy to absorb water and becomes a factor that adversely affects insulation properties (HAST) and the like. Examples of such polyamic acid not containing an ether bond include compounds represented by the following general formula (2A).

（式（１Ａ）中、Ａｒ^３が下記一般式（３）で表わされる４価の有機基及び／又はＡｒ^４が下記一般式（４）で表わされる２価の有機基であり、ｌは１以上の整数である。）

(In the formula (1A), Ar ³ is a tetravalent organic group represented by the following general formula (3) and / or Ar ⁴ is a divalent organic group represented by the following general formula (4). (It is an integer above.)

（式（３）中、Ｘは炭素数５〜２０のアルキレン基を示し、Ｒ¹及びＲ^２は各々独立に水素原子、炭素数１〜６のアルキル基又は炭素数１〜３のアルコキシ基を示し、ｍ及びｎは各々独立に１〜３の整数である。）

(In the formula (3), X represents an alkylene group having 5 to 20 carbon atoms, and R ¹ and R ² each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an alkoxy group having 1 to 3 carbon atoms. M and n are each independently an integer of 1 to 3.)

（式（４）中、Ｚは単結合又は２価の有機を示し、Ｙ^１及びＹ^２それぞれ独立に炭素数５〜２０のアルキレン基を示す。）

(In formula (4), Z represents a single bond or a divalent organic, and Y ¹ and Y ² each independently represents an alkylene group having 5 to 20 carbon atoms.)

  Further, in the general formula (4), by using a polyamic acid in which Z is represented by the following general formula (5), general formula (6) and / or general formula (7), further low temperature curing (˜200 ° C. ), Low warpage, heat resistance (5% weight loss temperature), insulation and low water absorption.

（式（５）中、Ｒ^３は水素原子、炭素数１〜１０のアルキル基、炭素数１〜１０のアルケニル基又は炭素数１〜３のアルコキシ基を示し、ｍは１〜４の整数を示す。なお、ｍが２以上の場合、複数存在するＲ^３は同一でも異なっていてもよい。）

(In the formula (5), ^{R 3} is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group or an alkoxy group having 1 to 3 carbon atoms having 1 to 10 carbon atoms, m is an integer of 1 to 4 In addition, when m is 2 or more, a plurality of R ³ may be the same or different.)

（式（６）中、Ｒ^４は水素原子、炭素数１〜１０のアルキル基、炭素数１〜１０のアルケニル基又は炭素数１〜３のアルコキシ基を示し、ｎは１〜４の整数を示す。なお、ｎが２以上の場合、複数存在するＲ^３は同一でも異なっていてもよい。）

(In the formula (6), ^{R 4} is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group or an alkoxy group having 1 to 3 carbon atoms having 1 to 10 carbon atoms, n represents an integer of 1 to 4 In addition, when n is 2 or more, a plurality of R ³ may be the same or different.)

（式（７）中、Ｒ^５は水素原子、炭素数１〜１０のアルキル基、炭素数１〜１０のアルケニル基又は炭素数１〜３のアルコキシ基を示し、ｐは１〜４の整数を示す。なお、ｐが２以上の場合、複数存在するＲ^５は同一でも異なっていてもよい。）

(In the formula (7), ^{R 5} is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group or an alkoxy group having 1 to 3 carbon atoms having 1 to 10 carbon atoms, p is an integer of 1 to 4 In addition, when p is 2 or more, a plurality of R ⁵ may be the same or different.)

  Examples of the (A) tetracarboxylic dianhydride component having an alkylene chain having 5 to 20 carbon atoms in the main chain include compounds represented by the following general formula (8).

（式（８）中、Ｘは炭素数５〜２０アルキレン基を示す。）

(In the formula (8), X represents an alkylene group having 5 to 20 carbon atoms.)

Examples of the compound represented by the formula (8) include pentamethylene bis trimellitate dianhydride, hexamethylene bis trimellitate dianhydride, heptamethylene bis trimellitate dianhydride, octamethylene bis trimellitate dianhydride. Nonamethylene bis trimellitate dianhydride, decamethylene bis trimellitate dianhydride, dodecamethylene bis trimellitate dianhydride and the like.
These are used alone or in combination of two kinds.

  Examples of the (B) diamine component having an alkylene chain having 5 to 20 carbon atoms in the main chain include hexamethylene diamine, heptamethylene diamine, octamethylene diamine, nonamethylene diamine, decamethylene diamine, and 2,11-diaminododecane. 1,12-diaminooctadecane, 2,5-dimethylhexamethylenediamine, 3-methylheptamethylenediamine, 2,5-dimethylheptamethylenediamine, 4,4-dimethylheptamethylenediamine, 5-methylnonamethylenediamine, 3 -Aliphatic diamines such as methoxyhexamethylene diamine, compounds represented by the following general formulas (9), (10) and / or (11).

（式（９）中、Ｙ^１及びＹ^２それぞれ独立に炭素数５〜２０のアルキレン基を示し、Ｒ^６は水素原子、炭素数１〜１０のアルキル基、炭素数１〜１０のアルケニル基又は炭素数１〜３のアルコキシ基を示し、ｑは１〜４の整数を示す。なお、ｑが２以上の場合、複数存在するＲ^６は同一でも異なっていてもよい。）

(In Formula (9), Y ¹ and Y ² each independently represent an alkylene group having 5 to 20 carbon atoms, and R ⁶ represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 1 to 10 carbon atoms, or C represents an alkoxy group having 1 to 3 carbon atoms, and q represents an integer of 1 to 4. When q is 2 or more, a plurality of R ⁶ may be the same or different.

（式（１０）中、Ｙ^１及びＹ^２それぞれ独立に炭素数５〜２０のアルキレン基を示し、Ｒ^７は水素原子、炭素数１〜１０のアルキル基、炭素数１〜１０のアルケニル基又は炭素数１〜３のアルコキシ基を示し、ｒは１〜４の整数を示す。なお、ｒが２以上の場合、複数存在するＲ^７は同一でも異なっていてもよい。）

(In Formula (10), Y ¹ and Y ² each independently represent an alkylene group having 5 to 20 carbon atoms, and R ⁷ represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 1 to 10 carbon atoms, or C represents an alkoxy group having 1 to 3 carbon atoms, and r represents an integer of 1 to 4. When r is 2 or more, a plurality of R ⁷ may be the same or different.

（式（１１）中、Ｙ^１及びＹ^２それぞれ独立に炭素数５〜２０のアルキレン基を示し、Ｒ^８は水素原子、炭素数１〜１０のアルキル基、炭素数１〜１０のアルケニル基又は炭素数１〜３のアルコキシ基を示し、ｓは１〜４の整数を示す。なお、ｓが２以上の場合、複数存在するＲ^８は同一でも異なっていてもよい。）

(In Formula (11), Y ¹ and Y ² each independently represent an alkylene group having 5 to 20 carbon atoms, and R ⁸ represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 1 to 10 carbon atoms, or A C 1-3 alkoxy group, and s represents an integer of 1 to 4. When s is 2 or more, a plurality of R ⁸ may be the same or different.

  Examples of the compound represented by the general formula (10) include [3,4-bis (1-aminoheptyl) -6-hexylu-5- (1-octenyl)] cyclohexene (trade name “Versamine551”, Cognis Japan Co., Ltd. ) Is available as a commercial product. These are used alone or in combination of two kinds.

  As described above, the polyamic acid used in the present invention has an alkylene chain having 5 to 20 carbon atoms in the main chain obtained by the reaction of (A) a tetracarboxylic dianhydride component and (B) a diamine component. Among these, an alkylene chain having 6 to 16 carbon atoms is preferable, and an alkylene chain having 7 to 14 carbon atoms is more preferable. When the alkylene group has less than 5 carbon atoms, the water absorption rate and elastic modulus of the resin tend to increase. When the alkylene group has more than 20 carbon atoms, the water absorption rate and elastic modulus of the resin tend to decrease. It becomes.

  The polyamic acid used in the method of the present invention is an addition polymerization of approximately equimolar amounts of (A) acid component and (B) diamine component in an organic solvent at a reaction temperature of 80 ° C. or less, preferably 50 ° C. or less for 1 to 12 hours. Obtained by reaction.

  Examples of the solvent for reacting the (A) tetracarboxylic dianhydride with the (B) diamine component include nitrogen-containing solvents (N, N′-dimethylsulfoxide, N, N′-dimethyl). Formamide, N, N′-diethylformamide, N, N′-dimethylacetamide, N, N′-diethylacetamide, N-methyl-2-pyrrolidone, hexamethylenephosphoamide N-methylpyrrolidone, etc.), lactones (γ- Butyrolactone, γ-valerolactone, γ-caprolactone, ε-caprolactone, α-acetyl-γ-butyrolactone, etc.), alicyclic ketones (cyclohexanone, 4-methylcyclohexanone, etc.), ethers (3-methyl-3-methoxy) Butyl acetate, diethylene glycol dimethyl ether acetate, etc.) . Among these, nitrogen-containing solvents and alicyclic ketones are more preferable, and N-methyl-2-pyrrolidone and cyclohexanone are particularly preferable. These can be used alone or in admixture of two or more.

  The combination of the (A) tetracarboxylic dianhydride component and the (B) diamine component is preferably selected in consideration of the heat resistance, mechanical properties, and electrical properties of the polyimide resin film after final curing.

  The thermoplastic resin composition containing the polyamic acid is heat-cured so that the imidization rate is 80% or more for the purpose of improving heat resistance after filling the gap between the semiconductor chip and the flexible printed circuit board. Is preferred. The temperature for thermosetting is preferably 250 ° C. or lower, more preferably 220 ° C. or lower, and particularly preferably 200 ° C. or lower from the viewpoint of reducing the load on the semiconductor and reducing the warpage of the semiconductor device.

In addition, the measurement of this imidation ratio can measure an infrared absorption spectrum by the transmission method.
This imidization ratio value can be calculated by the following formula, assuming that a cured film (resin film thickness: 5 μm) cured at 300 ° C. for 1 hour is theoretically 100% imidized (reference).
Imidation rate = {(K / L)-(M / N)} / {(O / P)-(M / N)}
K: Absorbance at the maximum peak near 1375 cm ⁻¹ after curing the resin composition (arbitrary temperature) L: Absorbance at the maximum peak near 1500 cm ⁻¹ after curing the resin composition (arbitrary temperature) M: Curing of the resin composition Absorbance at the maximum peak near 1375 cm ⁻¹ before N: Absorbance at the maximum peak near 1500 cm ⁻¹ before curing the resin composition O: Absorption of the maximum peak near 1375 cm ⁻¹ after curing the resin composition at 300 ° C. for 1 hour Absorbance P: Absorbance of the maximum peak around 1500 cm ⁻¹ after curing the resin composition at 300 ° C. for 1 hour.

  Flow characteristics of thermoplastic resin composition containing polyamic acid at the time of heat bonding, suppression of decomposition and foaming, setting of appropriate melting and solidification time, and heat resistance of the package after bonding are used as follows: (A) tetracarboxylic acid It can be freely adjusted by changing the dianhydride component and the (B) diamine component.

  Moreover, it is preferable that the cured film formed from the said thermoplastic resin composition is excellent in bending resistance so that it can follow a deformation | transformation of a flexible printed circuit board, a soldering resist, etc.

  Moreover, even if it uses a polyolefin-type thermoplastic resin for the thermoplastic resin composition used for the method of this invention, the effect equivalent to a polyamic acid-type thermoplastic resin composition is acquired. Further, a thermoplastic resin other than the polyamic acid-based thermoplastic resin or the polyolefin-based thermoplastic resin can be used in combination. Examples of the thermoplastic resin other than the polyamic acid-based thermoplastic resin or the polyolefin-based thermoplastic resin include polyvinylidene fluoride, polyester, polyacrylonitrile, polystyrene, polyamide, polyimide, and polyphenylene. These thermoplastic resins can be used singly or in combination of two or more, but it is important to match the use conditions, for example, the use temperature.

  Moreover, various additives can be mix | blended with the thermoplastic resin composition used for this invention method from a viewpoint of improving adhesiveness or heat resistance. Examples of such additives include antifoaming agents, silane coupling agents, inorganic or organic fillers, and pigments.

  In addition, the thermoplastic resin composition used in the method of the present invention preferably has a small content of ionic impurities from the viewpoint of improving migration resistance. Examples of ionic impurities include chlorine ions. The chlorine ion concentration needs to be 5 ppm or less with respect to the thermoplastic resin composition, and is preferably less than 3 ppm, more preferably less than 1 ppm.

  Further, the elastic modulus after thermosetting of the thermoplastic resin composition used in the method of the present invention is preferably 50 or more and 3500 MPa or less, more preferably 50 or more and 3000 MPa or less, and more preferably 50 or more and 2800 MPa or less. Particularly preferred is 50 to 1500 MPa, and most preferred is 100 to 1000 MPa.

  Furthermore, the linear expansion coefficient after thermosetting of the thermoplastic resin composition used in the method of the present invention is preferably 300 ppm / ° C. or less, more preferably 200 ppm / ° C. or less, and 150 ppm / ° C. or less. Particularly preferred is 100 ppm / ° C. or less.

  When the elastic modulus exceeds 3500 MPa and the linear expansion coefficient exceeds 300 ppm / ° C., stress is generated between the materials constituting the flip chip mounting product, which causes cracks and peeling, and tends to reduce migration resistance. . Further, when the elastic modulus is high, the stress applied to the semiconductor chip increases, and there is a tendency that the semiconductor device becomes defective or warps and deforms.

  Moreover, the water absorption rate of the thermosetting film of the thermoplastic resin composition is 0 μm or more from the viewpoint of improving the insulation characteristics when it is assumed that the film thickness of the thermosetting film is 20 μm and immersed in water at 25 ° C. for 24 hours. It is preferably less than 2%, more preferably 0 or more and less than 1.5%, and particularly preferably 0 or more and less than 0.5%.

In addition, this water absorption rate is computable based on the following formula | equation.
λ (%) = {(w−w ₀ ) / w} × 100
λ: Water absorption rate (%)
w ₀ : mass of the resin composition cured film before being immersed in deionized water
w: Mass of the cured resin composition film after immersion in deionized water

  Moreover, it is preferable that the thermosetting film | membrane of the thermoplastic resin composition used for this invention method has the bending resistance which follows a flexible wiring board or a soldering resist. In the case of not having bendability, the flexible wiring board is peeled off from the resin end when it is folded when it is incorporated into the apparatus, or cracks are generated, which tends to reduce migration resistance.

  The resin layer made of the thermoplastic resin composition used in the method of the present invention is formed by applying the thermoplastic resin composition to a desired thickness and shape according to the distance between the chip and the printed circuit board and the size of the semiconductor chip. The coating method and conditions are not particularly limited. The thickness generally depends on the height of the wiring and the like, but is preferably 50 to 70 μm. Common coating methods include spin coating and printing, and a thermoplastic resin composition layer can be formed by applying a thermoplastic resin composition, drying, and curing. The drying and curing temperature depends on the solvent used, but a method of gradually increasing from about 100 ° C. to about 300 ° C. is common. Another method for forming the resin layer includes a method of laminating a thermoplastic resin composition layer formed in a film shape on a semiconductor chip to form a thermoplastic resin composition layer.

  Since the thermoplastic resin used in the method of the present invention is excellent in stability, there is no limitation on the standing time until the heat bonding after applying the thermoplastic resin composition to the semiconductor chip or the printed circuit board in advance, drying and curing. When the thermoplastic resin composition used in the method of the present invention is used, there is no restriction on the standing time with the joining step after forming the thermoplastic resin composition layer, so that the joining step can be taken. Moreover, since post-curing after joining required for a general thermosetting resin is not necessary, the process can be shortened.

  In the case of AC insulation, the electrical insulation of the cured resin film has a correlation with the dielectric constant of the resin, and it is preferable to use a resin having a low polarity for the thermoplastic resin composition.

  Also, electrode corrosion of printed circuit boards in continuous voltage application tests under high temperature and high humidity correlates with the water absorption and isohumidity of the thermoplastic resin composition, so there are few polar groups with low affinity for moisture. It is preferable to use a resin.

  The thermoplastic resin composition layer can be formed by applying, dripping or pasting the thermoplastic resin composition into a desired thickness and shape according to the distance between the semiconductor component and the printed circuit board and the size of the semiconductor electronic component. There are no particular limitations on the method and conditions of application, dripping and pasting. As described above, the thickness is generally about 50 to 150 μm, although it generally depends on the height of the wiring.

  Placement of a thermoplastic resin composition suitable as a sealing filler for mounting semiconductor devices on a semiconductor electronic component assembly (wafer) can be achieved by applying spin coating as a representative coating in liquid form or laminating a film. It is.

  Since the thermoplastic resin used in the method of the present invention is excellent in stability, the standing time until the back grinding, dicing, and flip-chip heat bonding after the thermoplastic resin composition is applied, dropped, and pasted to the semiconductor electronic component in advance. There is no limit.

  The polishing apparatus for performing back grinding is not particularly limited as long as it has a polishing stage, and a known apparatus such as a trade name “DFG-8540” manufactured by Disco Corporation can be used. Also, there are no particular limitations on the polishing conditions.

  A device to which the method of the present invention can be applied is not particularly limited, and examples thereof include a semiconductor substrate such as a silicon wafer and a GaAs wafer. Moreover, although it does not specifically limit about the thickness, For example, they are 200 micrometers-1000 micrometers. Further, bumps may be formed on the surface or may not be present, and the bump height is not particularly limited, but is, for example, 10 to 200 μm. The thickness of the back-ground semiconductor electronic component assembly (wafer) is not particularly limited, but is, for example, 50 to 600 μm. Further, the dicing method and the size of the semiconductor electronic component are not particularly limited.

  When a semiconductor device (chip) with a thermoplastic resin composition layer obtained by dicing is mounted on a circuit board, a normal flip chip bonder is used. The mounting conditions are not particularly limited as long as the electrical connection between the chip and the substrate can be satisfactorily obtained, and is appropriately determined according to the material of the bump and the electrode of the substrate.

  In the flip chip mounting method in which the thermoplastic resin composition is preliminarily disposed, the pressure applied at the time of heat bonding is released in a state where the resin is melted, so that voids due to springback are generated between the semiconductor device and the circuit board. Arise. The generated void is not caused by air or the like entering from the outside, but is a vacuum void generated from the inside. After joining the semiconductor device and the circuit board, the process of the present invention is inserted, By melting the thermoplastic resin composition, voids can be eliminated. When a thermosetting resin composition is used as in the prior art, it does not melt by reheating, so in order to suppress voids that occur during flip chip mounting, the overheating time during mounting is lengthened and the resin is used. It is necessary to cure and solidify, the individual joining time becomes long, and the production efficiency is poor. On the other hand, when a thermoplastic resin composition is used as in the method of the present invention, voids generated in flip chip mounting can be eliminated. Therefore, when mounting a large number of semiconductor devices on a circuit board, mounting them Therefore, the time required for flip chip bonding can be shortened, which is effective for shortening the manufacturing process of semiconductor device mounted products.

  Hereinafter, the present invention will be described more specifically based on examples. However, this invention is not limited at all by this.

(Synthesis example of thermoplastic resin composition)
In a 300 mL four-necked separable flask equipped with a stirrer, a thermometer and a nitrogen introduction tube, 29.00 g (0.09 mol) of 4,4′-oxydiphthalic dianhydride (BTDA), N-methyl-2-pyrrolidone 71.7g was added and it stirred at 60 degreeC for 15 minutes. Next, 49,96 g of [3,4-bis (1-aminoheptyl) -6-hexylu-5- (1-octenyl)] cyclohexene (manufactured by Cognis Japan, trade name “Versamine 551”) with stirring. (0.09 mol) was added over 15 minutes. After completion of the addition, the temperature was raised to 40 ° C. and the mixture was stirred for 5 hours to obtain an N-methyl-2-pyrrolidone solution of polyamic acid. The solid content in the obtained solution was 52% in mass, and the number average molecular weight of the thermoplastic resin was 17,000.

(Fabrication of semiconductor devices)
The thermoplastic resin composition obtained by adding an additive to the thermoplastic resin is applied onto the surface of a silicon wafer having a diameter of 150 mm and a thickness of 625 μm (with a gold plating bump of 15 μm as an electrode pattern) using a spin coater, and 100 After drying at 1 ° C. for 1 hour and curing at 180 ° C. for 1 hour, a 100 μm thick thermoplastic resin layer was formed.

  Subsequently, it was set on a polishing stage of a polishing apparatus (trade name “DFG-8540” manufactured by Disco Corporation) and back-ground under predetermined polishing conditions to obtain a silicon wafer having a thickness of 550 μm. Next, the polished back surface is attached to a dicing tape (trade name HAE-1503H, manufactured by Hitachi Chemical Co., Ltd.), and then a size of 15.1 mm × 1.6 mm using a cutting device (trade name, DFD651, manufactured by Disco Corporation). It was cut into a chip (semiconductor device).

  Thereafter, the cut semiconductor chip is directed to the circuit board (30 μm pitch Cu wiring tin-plated flexible board) side on which the thermoplastic resin layer surface is to be mounted, and the stage temperature is 100 ° C., the tool temperature is 380 ° C., and the bonding weight is applied. Bonding was performed under the conditions of 90 N / chip and a bonding time of 2 seconds. At this time, the thermoplastic resin layer melted, the bumps of the semiconductor device and the electrodes on the circuit board were in direct contact, and the metal was eutectic to obtain electrical connection. A semiconductor device mounted product was obtained through these steps.

  In the obtained semiconductor device mounted product, voids were present in the thermoplastic resin composition, but all disappeared by heating at 200 ° C./1 hour.

Moreover, the same semiconductor device mounting product was produced using the silicon wafer with a thermoplastic resin composition which was left to stand at 60 ° C. for 3 months after applying and curing the thermoplastic resin composition on a silicon wafer (semiconductor substrate).
The performance of the obtained semiconductor device mounted product is shown in the following (Table 1).

  At this time, when the surface of the silicon wafer with bumps after back grinding was observed, water did not enter without peeling. Further, when the polished surface of the silicon wafer was examined using a surface roughness meter (Surfcom), it was smooth.

(Comparative example)
At room temperature, 22 parts by weight of a biphenyl type epoxy resin (trade name YX-4000, manufactured by JER), 12 parts by weight of a phenol novolac resin, 60 parts by weight of silica powder, 6 parts by weight of acrylonitrile butadiene rubber, 1,8-diazabicyclo (5. 4.0) 0.2 parts by weight of undecene, 0.3 parts by weight of γ-glycidoxypropyltrimethoxysilane, and 24 parts by weight of methyl ethyl ketone were mixed, and the mixture was applied with a bar coater and heated at 110 ° C. for 30 minutes. A sheet of the resin composition having a thickness of 100 μm was obtained by drying.

  Using this sheet, when the same operation as the manufacturing process of the semiconductor device mounted product in the above embodiment was performed, the alignment mark for coordinate recognition drawn on the chip could not be recognized, and it was fully automatic. Dicing and flip chip bonding were impossible, so a semiconductor device mounting product was manually manufactured.

  In addition, many voids existed at the same joining time, but the voids did not disappear even after reheating.

  Moreover, when a similar semiconductor device mounting product was produced using a silicon wafer with a sealing filler resin that was allowed to stand at 60 ° C. for 3 months, the resin was cured, and the resin was not melted and the connection was established. I couldn't.

The evaluation of the semiconductor device mounted product obtained in each example was performed by the following method.
[Void presence / absence]
Voids were observed and evaluated for their presence. The voids after reheating were also observed.
[Migration resistance]
Using the ion migration tester (product name “MIG-8600” manufactured by IMV Co., Ltd.) for the manufactured semiconductor device mounted product, the migration resistance was evaluated for 100 hours under the condition of 120 ° C./85% RH / 60 V, and the resistance Value 1. E + 8 or more: ○, resistance value: 1. X was defined as less than E + 8.
[Heat cycle resistance]
Using a thermal shock device, an operation of holding at −40 ° C. for 30 minutes and then holding at 125 ° C. for 30 minutes was performed. The continuity of the semiconductor device mounted product after performing this operation 1000 times was evaluated. The number of broken wires out of 10 is shown.
[PCT resistance]
The condition was maintained at 121 ° C./100% RH / 2 atm for 168 hours, and the presence or absence of chip peeling was observed. The percentage of the semiconductor device mounted product from which the chip was peeled was shown as a percentage. Further, a continuity test was performed, and the number of broken wires out of 10 was shown.

  As is clear from the results shown in (Table 1), according to the mounting method of the semiconductor device of the present invention, the semiconductor device can be mounted on the circuit board without using the back grind tape. Since the filling resin used is thermoplastic, the transparency is high, and the alignment marks on the circuit board can be easily seen, and voids generated in the filling resin layer disappear due to reheating of the resin layer. It can be confirmed that the adhesion of the semiconductor device to the substrate and the connection between the electrode of the semiconductor device and the wiring of the circuit board are also good. On the other hand, in the comparative example, it is difficult to visually recognize the alignment mark, it is impossible to mount by an automatic process, it is impossible to eliminate voids generated in the resin layer, and the semiconductor device is bonded to the circuit board. The connection between the electrode of the semiconductor device and the wiring of the circuit board also becomes poor.

  As described above, according to the method for mounting a semiconductor device of the present invention, it is possible to reduce the back grind tape application, the peeling process, and the back grind tape material in the manufacturing process of the semiconductor device mounted product. Further, by using a thermoplastic resin composition suitable for a sealing filler for mounting a semiconductor device, the flip chip bonding time can be greatly shortened, and the manufacturing process of the semiconductor device mounted product can be greatly shortened.

Claims (5)

A resin layer forming step of forming a resin layer made of a thermoplastic resin composition on one surface of the semiconductor substrate in which a plurality of electrode patterns are formed on one surface of the semiconductor substrate;
A substrate polishing step of polishing the surface of the semiconductor substrate opposite to the surface on which the resin layer is formed;
A dicing step of obtaining a plurality of semiconductor devices by dicing the polished semiconductor substrate for each of a plurality of electrode patterns formed on one surface thereof;
A semiconductor device mounting step of mounting the semiconductor device on the circuit board by adhering the surface on which the resin layer of the semiconductor device obtained by the dicing is formed on the circuit board;
A method for mounting a semiconductor device, comprising:   2. The semiconductor device mounting method according to claim 1, wherein the circuit board is a flexible printed wiring board. The thermoplastic resin composition has the following general formula (1):

(In the formula (1), Ar ¹ represents a tetravalent organic group, Ar ² represents a divalent organic group, and l is an integer of 1 or more). A mounting method of a semiconductor device according to claim 1 or 2. 4. The semiconductor device according to claim 3, wherein the organic group represented by Ar ¹ and / or the organic group represented by Ar ² in the general formula (1) includes an alkylene group having 5 to 20 carbon atoms. How to implement   A semiconductor device mounting product obtained by using the semiconductor device mounting method according to claim 1.