JP2008288371A - Ultraviolet irradiation device and method for semiconductor wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To irradiate a semiconductor wafer with an ultraviolet light quantity intrinsically required for the ultraviolet irradiation process regardless of the change of the reflectance or the absorptance of ultraviolet rays dependent on the state of the semiconductor wafer surface in an ultraviolet irradiation device for the semiconductor wafer. <P>SOLUTION: When an irradiation head 1 is moved from one side to the other side in the neighborhood of the surface of a semiconductor wafer 5 at any time, the irradiation light quantity of the ultraviolet rays is changed by feeding back the state of the surface with the reflectance or the absorptance measurement function of the irradiation head 1, thereby irradiation with the ultraviolet light quantity according to the surface state of the semiconductor wafer 5 is carried out. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an ultraviolet irradiation to a semiconductor wafer, and more particularly to an ultraviolet irradiation apparatus and method for a semiconductor wafer that controls the amount of ultraviolet irradiation according to the state of the wafer surface or the surface of a chip formed on the wafer.

  In the semiconductor wafer ultraviolet irradiation apparatus invented so far, for example, a general-purpose memory represented by a DRAM or a general system LSI has elements such as transistors uniformly formed on the surface of the semiconductor wafer or in one chip. Has been.

  Therefore, in order to make these components have the same characteristics, it is necessary to make the amount of ultraviolet rays in the ultraviolet irradiation process uniform on the semiconductor wafer surface.

  Therefore, in order to realize this, in the conventional technology, a plurality of ultraviolet lamps are installed to equalize the amount of ultraviolet rays, or to rotate the semiconductor wafer during the irradiation of ultraviolet rays to achieve uniformity. .

  However, in recent years, in semiconductor wafers typified by embedded LSIs, the circuit configuration and element configuration may differ within the chip, so the amount of ultraviolet light required in the ultraviolet irradiation process must also be changed within the semiconductor wafer or chip. Is emerging.

  In this case, since the conventional technology has required uniformity of the amount of ultraviolet light within the irradiation surface, there is no mechanism for changing the amount of ultraviolet light individually in a semiconductor wafer or chip, or Even when there is a mechanism that can change the amount of light, it is changed from the drawing information of the semiconductor wafer to a predetermined amount of UV irradiation, so UV irradiation by changing the reflectivity or absorption rate of UV depending on the actual wafer surface unevenness etc. There is a problem that the amount of ultraviolet light originally required for the process does not reach the layer that requires the process of ultraviolet light, or the amount of light is insufficient.

  Next, two conventional examples for solving the above problems will be given.

  First, as a first conventional example, a semiconductor device described in Patent Document 1 will be described.

  In this conventional example, when the surface treatment process of the organic EL display glass substrate is applied, the amount of the ultraviolet absorbing medium and the ultraviolet transmitting medium supplied between the ultraviolet light source and the irradiated surface is controlled to control the irradiation surface. There is a method for controlling the amount of ultraviolet light.

  Next, a semiconductor device described in Patent Document 2 will be described as a second conventional example.

  In this conventional example, there is a method of controlling the amount of ultraviolet light to be irradiated with respect to the rotation radius of a disk as a case where ultraviolet light is irradiated mainly on a rotating irradiated surface such as a DVD or CD.

This method uses a plurality of ultraviolet light emitting diodes as a light source, arranges the ultraviolet light emitting diodes in the radial direction of the irradiated surface, collects light in a uniaxial direction by a plurality of convex lenses and a cylindrical lens, and irradiates the irradiated surface with ultraviolet rays. Yes. At that time, in order to solve the problem that the amount of irradiation light per area is large on the inner circumference side and smaller on the outer circumference side due to the rotation radius of the rotating body, the power unit for supplying power to each of the plurality of ultraviolet light emitting diodes and the light emission A control unit for controlling the amount is provided, and the irradiation light quantity can be individually controlled with respect to the distance in the radial direction.
JP 2006-185938 A JP 2007-26517 A

  However, in the method disclosed in Patent Document 1, it is possible to control the amount of ultraviolet irradiation to the irradiated surface to a preset amount of irradiation, but since oxygen is used as the ultraviolet absorbing medium, an ultraviolet light source is used. It is difficult to control the oxygen concentration at individual locations in the space due to gas diffusion in the space between the substrate and the irradiated surface, and it is difficult to individually control the amount of ultraviolet light irradiated to the substrate according to the position of the semiconductor wafer . Further, in the method disclosed in Patent Document 2, in order to adjust the light amount of each ultraviolet light-emitting diode from the position information of the radius of the rotating body and the required ultraviolet light amount, the control for the unevenness of the actual surface state is performed. Have difficulty.

  Furthermore, in the ultraviolet irradiation apparatus disclosed in Patent Documents 1 and 2, since there is no mechanism for confirming the surface state of the irradiated surface immediately before the irradiation of ultraviolet rays, the difference in ultraviolet reflectance due to the difference in the surface state of the irradiated surface. It is difficult to deal with In addition, since a work process for setting the irradiation light quantity for all positions from the position information of the drawing of the surface to be irradiated is necessary, the work process is increased even when the irradiation light quantity of ultraviolet rays is changed by the drawing position information of the surface to be irradiated. There is a problem to do.

  Therefore, the present invention has been made in view of the above problems, and an example of the problem is that, in an ultraviolet irradiation apparatus for a semiconductor wafer, due to a difference in the reflectance or absorption rate of ultraviolet rays depending on the surface state of the semiconductor wafer. In addition, an object of the present invention is to provide an ultraviolet irradiation apparatus that can irradiate the amount of ultraviolet light originally required for the ultraviolet irradiation process.

  In order to solve the above problem, the invention according to claim 1 is a semiconductor manufacturing apparatus that irradiates ultraviolet rays while scanning a semiconductor wafer, and measures the reflectance of the semiconductor wafer at a wavelength in the vicinity of the irradiating ultraviolet rays. And irradiating means for irradiating the ultraviolet rays while repeatedly controlling the light quantity of the ultraviolet rays.

  According to a second aspect of the present invention, in the ultraviolet irradiation apparatus according to the first aspect, a wavelength in the vicinity of the irradiated ultraviolet light is a wavelength within a range of 10 to 450 nm.

  According to a third aspect of the present invention, in the ultraviolet irradiation apparatus according to the first aspect, a light receiving element is arranged next to a light emitting element for measuring the reflectance of the semiconductor wafer.

  According to a fourth aspect of the present invention, in the ultraviolet irradiation apparatus according to the third aspect, two light receiving elements are arranged on both sides of the light emitting element for measuring the reflectance of the semiconductor wafer.

  According to a fifth aspect of the present invention, in the ultraviolet irradiation apparatus according to the first aspect, the light emitting element for measuring the reflectance of the semiconductor wafer and the light emitting element for the process are at the same position in the moving direction with respect to the semiconductor wafer. It is characterized by being arranged.

  According to a sixth aspect of the present invention, in the ultraviolet irradiation apparatus according to any one of the first to fifth aspects, the reflectance measurement of the light emitting elements for measuring the reflectance of the semiconductor wafer is adjacent to the reflectance measurement. The reflectance is measured by being divided in time with the light emitting element for use.

  According to a seventh aspect of the present invention, in the ultraviolet irradiation apparatus according to any one of the first to sixth aspects, a total amount of ultraviolet rays irradiated to the semiconductor wafer is divided into a movement position of the semiconductor wafer and an irradiation light amount. By doing so, it is possible to freely change the amount of irradiation light.

  According to an eighth aspect of the present invention, in the semiconductor manufacturing method in which the semiconductor wafer is irradiated with ultraviolet rays while scanning the semiconductor wafer, the measurement of the reflectance of the semiconductor wafer and the control of the light quantity of the ultraviolet rays are performed at a wavelength in the vicinity of the irradiated ultraviolet rays. It is characterized by comprising an irradiation step of irradiating the ultraviolet rays while repeating.

  According to the present invention, since the state of the semiconductor wafer surface can be measured by the measurement ultraviolet irradiation light source installed on the same optical axis as that of the process ultraviolet light source immediately before the ultraviolet irradiation, the ultraviolet light corresponding to the circuit pattern and surface state of the semiconductor wafer can be measured. The amount of light can be adjusted.

  In addition, according to the present invention, there is no need to set the irradiation amount from the positional information of the drawing of the irradiated surface in advance, so that it is possible to prevent an increase in the number of work steps due to a change in the amount of irradiation light.

  Embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a schematic diagram showing the relationship of the control system of each element of the ultraviolet irradiation apparatus for a semiconductor wafer according to the first embodiment of the present invention.

  Referring to FIG. 1, an ultraviolet irradiation apparatus for a semiconductor wafer according to a first embodiment of the present invention includes an irradiation head unit 1 that irradiates ultraviolet rays, and a power unit 2 that supplies power to an ultraviolet light source of the irradiation head unit 1. The control unit 3 for controlling the power unit 2, the input unit 4 for giving basic data to the control unit 3, the semiconductor wafer 5 to be irradiated with ultraviolet light, the function for supporting the semiconductor wafer 5, and the calibration of the amount of ultraviolet light to be irradiated It comprises a support part 6 having a reflecting surface for carrying out and a transport part 7 for transporting the support part 6 so as to scan below the irradiation head part 1.

  The irradiation head unit 1 has a function for measuring the reflectance or absorption rate of the surface of the semiconductor wafer 5, and the measurement result of the reflectance or absorption rate is transmitted to the control unit 3.

  The control unit 3 has a function of calculating the irradiation amount of ultraviolet rays from the received measurement result of the reflectance or absorption rate and basic data given from the input unit 4.

  The semiconductor wafer 5 is supported by the support portion 6.

  The details of the irradiation head unit 1 will be described with reference to FIGS.

  FIG. 2 is a view of the irradiation head unit 1 as viewed from above.

  Referring to FIG. 2, the irradiation head unit 1 includes a reflectance measuring unit 11 in the front row facing the semiconductor wafer 5 in the transport direction and a process irradiation unit 12 in the rear row.

  The front row reflectivity measuring unit 11 has one measurement light emitting unit 16 that emits ultraviolet rays used for reflectivity measurement, and a light receiving unit 17 that receives reflected light from the surface of the semiconductor wafer 5 on both sides thereof. Yes.

  The measurement light emitting unit 16 irradiates the semiconductor wafer 5 with minute ultraviolet rays perpendicularly. The irradiated ultraviolet rays are not absorbed by the semiconductor wafer 5 but partially reflected and received by the light receiving unit 17. The measurement light-emitting unit 16 can be used as long as it is an ultraviolet light-emitting device that can be driven at a high speed, but generally an ultraviolet light-emitting diode is used.

  Two light receiving units 17 are arranged on both sides of the measurement light emitting unit 16 in order to receive reflected light more accurately. The light receiving unit 17 has a function of transmitting light amount data to the control unit 3.

  The light receiving unit 17 can be used as long as it can receive the ultraviolet wavelength irradiated by the ultraviolet light emitting diode and can respond at high speed, but generally has a spectral characteristic in the vicinity of the same wavelength as the emitted ultraviolet ray. A certain photodiode is used. The wavelength in the vicinity of the ultraviolet rays to be irradiated is a wavelength within the range of 10 to 450 nm.

  Further, the measurement groups 13, 14, and 15 are divided into the groups of measurement groups 13, 14, and 15 so that the measurements at the adjacent measurement light emitting unit 16 and the light receiving unit 17 can be distinguished, and the measurement is divided in time.

  Note that the measurement group located at a distance that is not affected by the irradiation light and the reflected light from the other measurement light emitting units 16 is again assigned to the measurement groups 13, 14, and 15, and is repeatedly divided in time to shorten the light emission time. .

  FIG. 3 is a part of a view of the reflectance measuring unit 11 as viewed from the traveling direction side of the semiconductor wafer 5.

  Referring to FIG. 3, the light receiving unit 17 is a reflected light in which a part of the ultraviolet light irradiated perpendicularly to the semiconductor wafer 5 from the measurement light emitting unit 16 is reflected on the surface of the semiconductor wafer 5 or a circuit pattern near the surface. Placed at a position where light can be received.

  The reflectance measurement unit 11 has a configuration in which the combination of the measurement light emitting unit 16 and the two light receiving units 17 on both sides is continuously arranged to be equal to or larger than the diameter of the semiconductor wafer 5. However, as shown in FIG. 2, the light receiving unit 17 can also serve as a light receiving unit for the measurement light emitting units 16 on both sides.

  Next, the process irradiation unit 12 in the rear row will be described.

  The process irradiation unit 12 includes a plurality of process light emitting units 18 that irradiate ultraviolet rays for performing an ultraviolet process, and is supplied from the power unit 2 based on the result calculated by the control unit 3 from the measurement result of the reflectance measurement unit 11. The semiconductor wafer 5 is irradiated with ultraviolet rays with the electric power and timing.

  Further, the process light emission unit 18 is characterized in that the central axis of the reflectance measurement unit 11 and the measurement light emission unit 16 coincide with each other.

  Next, the positional relationship between the measurement light emission unit 16 and the process light emission unit 18 of the reflectance measurement unit 11 in the front row will be described with reference to FIG.

  Referring to FIG. 4, the process light emitting unit 18 is disposed at a position where the central axis with the measurement light emitting unit 16 coincides with the transport direction of the semiconductor wafer 5. For the reflectance measurement sequence to be described later, for convenience, one measurement light emitting unit 16, the light receiving units 17 at both ends, and the process light emitting unit 18 arranged on the same central axis as the measurement light emitting unit 16 are grouped as an irradiation group. 13, the adjacent irradiation group is set to 14, and subsequently the irradiation group 15, and the irradiation group disposed at a position where the reflected light of the measurement light emitting unit 16 of the irradiation group 13 is not affected is referred to as the irradiation group 13 again. The irradiation group 14 and the irradiation group 15 are continued.

  In the present embodiment, there are three irradiation groups of irradiation groups 13-15. The number of sequential numbers in the irradiation group may be increased or decreased depending on the degree of scattering of the reflected light, the size of the irradiation head portion, and the like. Note that the light receiving units 17 of adjacent irradiation groups belong to both irradiation groups.

  Next, the power unit 2 will be described.

  The power unit 2 has the same number of power output circuits so that power can be supplied to the plurality of measurement light-emitting units 16 and the process light-emitting unit 18 of the irradiation head unit 1, and the power is supplied by varying the voltage and the supply time. It has a function to adjust.

  Next, the control unit 3 will be described.

  The control unit 3 includes an AD converter (not shown in the drawing) that converts received light voltages from the plurality of light receiving units 17 of the irradiation head unit 1 into digital data, basic information such as irradiation data from the input unit 4, and the above-described information. This embodiment is composed of an arithmetic unit that is not described, which calculates the power supplied to the process light emission unit 18 from the light reception data from the AD converter, and a drive circuit, which is also not described, but drives the transport unit 7. It controls the operation of the system.

  Next, the input unit 4 will be described.

  The input unit 4 includes the basic light amount of ultraviolet rays irradiated on the semiconductor wafer, the basic reflectance of the semiconductor wafer 5, parameters necessary for calculating the light amount from the light receiving unit 17, and the moving speed of the transfer unit 7 that transfers the semiconductor wafer 5. It has a function of setting various parameters necessary for the ultraviolet irradiation device, such as setting, and a function of transmitting the setting data to the control unit.

  Next, the support part 6 will be described.

  The support 6 has a function of mounting the semiconductor wafer 5. At the same time, as shown in FIG. 7, the measurement light emitting unit 16 of the irradiation head unit 1 and the calibration unit used for calibration of the process irradiation unit 18 are provided.

  Next, the transport unit 7 will be described.

  The transport unit 7 has a mechanism for transporting the support unit 6 on which the semiconductor wafer 5 is mounted according to an instruction from the control unit 2 in a scanning direction below the irradiation head unit 1 at a specified speed.

  The ultraviolet irradiation operation in the ultraviolet irradiation apparatus for a semiconductor wafer of this embodiment will be described using the above-described configuration, the measurement flowchart in FIG. 5, and the irradiation time timing chart in FIG.

  First, as a first step, the initial state setting of the ultraviolet irradiation device in FIG. 5 will be described.

  For the initial state setting, the moving speed setting of the transfer unit 7, various time settings of the irradiation period of ultraviolet rays, the setting of the basic light amount and reference reflectance of the ultraviolet rays irradiated to the semiconductor wafer, and the measurement result in the reflectance measuring unit 11 From the input unit 4, a calculation formula for increasing or decreasing the basic ultraviolet light amount and parameters used for the calculation formula are set. Each set value is transmitted from the input unit 4 to the control unit 3.

  Next, the irradiation amount calibration of the ultraviolet irradiation apparatus in the second step will be described.

  The irradiation amount is calibrated when the irradiation head unit 1 passes the calibration unit 8 installed on the support unit 6 shown in FIG.

  The calibration unit 8 causes the measurement light emitting unit 16 and the process light emitting unit 18 to emit light, and performs calibration based on the light amount data of the light receiving unit 17 at that time.

  Next, the operation from the reflectance measurement in the third and fourth steps to the process irradiation will be described with reference to FIG.

  FIG. 6 is a timing chart showing the operation time and timing of the reflectivity measurement in the third step and the process irradiation in the fourth step.

  As shown in FIG. 6, the ultraviolet irradiation operation of the present embodiment is performed over the entire surface of the semiconductor wafer 5 while repeating the irradiation time 20 to perform the ultraviolet irradiation.

  The irradiation time 20 includes a reflectance measurement time 21 and a process irradiation time 22. The third step is executed at the reflectance measurement time 21, and the fourth step is executed at the process irradiation time 22.

  Next, the reflectance measurement of the ultraviolet irradiation device in the third step will be described.

  In the reflectance measurement time 21, first, the measurement irradiation unit 16 of the irradiation group 13 in FIG. 2 irradiates weak ultraviolet rays that do not affect the process. Next, the result of the reflectance at that time is transmitted to the control unit 3. Next, a weak ultraviolet ray is irradiated from the measurement irradiation part 16 of the adjacent irradiation group 14 immediately after that, and a reflectance is measured. Next, the reflectance is similarly measured for the adjacent irradiation group 15.

  In this way, by dividing the measurement of the reflectance of the adjacent irradiation group within the reflectance measurement time 21 in FIG. 6, it is possible to avoid the overlap of reflected light. When the amount of light from the measurement irradiation unit 16 is insufficient, the output can be increased and subtracted from the amount of light at the time of process irradiation described below.

  Next, process irradiation in the fourth step will be described.

  The process irradiation is a step of actually irradiating the necessary ultraviolet light amount of the semiconductor wafer 5, and at the process irradiation time 22, the control unit 3 emits the necessary ultraviolet light amount from each process irradiation unit 18 via the power supply unit 2. To do.

  Thereafter, the reflectance measurement in the third step and the process irradiation in the fourth step are repeated and executed over the entire surface of the semiconductor wafer.

  Next, the operation at the time of ultraviolet irradiation of the control unit 3 will be described.

  The control unit 3 mainly has a control function of the transport unit 7, a function of calculating the irradiation light amount from the reflectance measurement result, and an irradiation function of irradiating the light amount necessary for the ultraviolet process.

  First, the control function of the transport unit 7 will be described.

  The moving speed of the transport unit 7 is determined by the distance traveled during the irradiation time 20 and the irradiation area of the ultraviolet rays irradiated by the process irradiation unit 18. That is, it is necessary to have a moving speed that is low enough to ignore the influence of the time division of the process irradiation time 22 and to be able to operate as an ultraviolet irradiation device.

  Next, the calculation function of the irradiation light amount will be described.

  The calculation function of the irradiation light amount is a linear function or a quadratic function from the measured reflectance with reference to the basic reflectance of the semiconductor wafer 5 that is an irradiated object input from the input unit 4 and the irradiation amount at that time. Alternatively, the process dose is determined according to the characteristics of the semiconductor wafer such as zone control according to the reflectance.

  Next, the irradiation function will be described.

  The control unit 3 changes the irradiation light amount of the ultraviolet ray based on the measurement result of the reflectance, but the irradiation area of the process irradiation unit 18 that performs the irradiation is wide with respect to the traveling direction of the semiconductor wafer 5. Therefore, the following control is used when the irradiation light quantity is changed. That is, the vertical axis elapsed time as shown in FIG. 8, the horizontal axis represents the irradiation position, the position moves one by one with respect to the elapsed time 1, and the spread of the irradiation area of the process irradiation unit is the elapsed time. It is assumed that it has spread to a position corresponding to three.

  Consider a case where the irradiation light amount is irradiated before the position m at the irradiation amount 9 and changed from the position m + 1 to 7. Before the position m, the irradiation light amount 3 is irradiated in three times at one position.

  In addition, about the position m-3 and the position m-2, since m before the elapsed time is abbreviate | omitted, although the total irradiation light quantity does not match, it shall be irradiated from before the elapsed time m. When the calculated irradiation amount is changed to 7 from the position m + 1, the irradiation light amount is changed by time division as shown in FIG. 8, and the irradiation light amount is changed at high speed.

  By the operation of each part as described above, the ultraviolet irradiation apparatus of the present embodiment irradiates the vicinity of the surface of the semiconductor wafer 5 with ultraviolet rays while the irradiation head unit 1 moves from one side to the other, and the ultraviolet irradiation step in the semiconductor manufacturing process. The state of the surface is fed back by the signal of the reflectance or absorptivity measurement function of the irradiation head unit 1 at any time, and the amount of ultraviolet irradiation is changed at any time. There is an effect that it is possible to accurately irradiate the amount of ultraviolet light originally required for the ultraviolet irradiation process regardless of the difference in reflectance or absorption.

  In the first embodiment, the number of the light receiving portions 17 of the irradiation head portion 1 is one with respect to the measurement light emitting portion 16, and the angle can be set with respect to the semiconductor wafer 5. A structure for this purpose is shown in FIGS. 9 and 10 as a second embodiment.

  In the second embodiment, as shown in FIG. 9, the irradiation position of the measurement reflection unit 16 irradiates the intermediate point between the measurement reflection unit 16 and the light receiving unit 17. The position of the process irradiation unit at that time is set on an extension line in the moving direction of the semiconductor wafer at an intermediate point between the measurement reflection unit 16 and the light receiving unit 17, as shown in FIG.

  As a result, the number of light receiving units 17 of the irradiation head unit 1 can be reduced, but on the other hand, since the irradiation angle of the measurement irradiation unit 16 is different from that of the process irradiation unit 18, the accuracy of the reflectance measurement result is reduced. There are also problems.

  Note that the present invention can also be applied to applications such as controlling the amount of light irradiation of an object having an arbitrary surface state.

It is a basic lineblock diagram of the ultraviolet irradiation device of the semiconductor wafer of this embodiment. It is a block diagram which shows the irradiation head part 1 of the ultraviolet irradiation apparatus of the semiconductor wafer of this embodiment. 4 is a side view of the positional relationship between the measurement light emitting unit 16 and the light receiving unit 17 of the reflectance measuring unit 11 of the irradiation head unit 1 of the ultraviolet irradiation apparatus for a semiconductor wafer according to the present embodiment as viewed from the scanning direction of the semiconductor wafer 5. FIG. It is a top view showing the positional relationship of the measurement light emission part 16, the light-receiving part 17, and the process irradiation part 18 of the irradiation head part 1 of the ultraviolet irradiation device of the semiconductor wafer of this embodiment. It is a flowchart showing the operation | movement sequence of the ultraviolet irradiation apparatus of the semiconductor wafer of this embodiment. It is a timing chart showing the irradiation sequence of the ultraviolet irradiation apparatus of the semiconductor wafer of this embodiment. It is a block diagram showing the semiconductor wafer 5, the support part 6, and the calibration part 8 of the ultraviolet irradiation apparatus of the semiconductor wafer of this embodiment. It is a figure showing the operation | movement at the time of the change of the moving speed of the semiconductor wafer 5, the process irradiation light quantity, and the process irradiation light quantity of the control part 3 of the ultraviolet irradiation apparatus of the semiconductor wafer of this embodiment. It is the side view which looked at the positional relationship of the measurement light emission part 16 and the light-receiving part 17 of the reflectance measurement part 11 of the irradiation head part 1 of 2nd Embodiment of the ultraviolet irradiation device of a semiconductor wafer from the scanning direction of the semiconductor wafer 5. . It is a top view showing the positional relationship of the measurement light emission part 16, the light-receiving part 17, and the process irradiation part 18 of the irradiation head part 1 of 2nd Embodiment of the ultraviolet irradiation device of a semiconductor wafer.

Explanation of symbols

1 Irradiation head (an example of irradiation means)
2 Power unit 3 Control unit 4 Input unit 5 Semiconductor wafer 6 Semiconductor wafer support unit 7 Transfer unit 8 Calibration unit 11 Reflectivity measurement unit 12 Process irradiation units 13, 14, 15 Measurement group 16 Measurement light emitting unit (an example of light emitting element)
17 Light receiving part (an example of a light receiving element)
18 Process irradiation part 20 Reflectivity measurement time 21 Process irradiation time 22 Irradiation period

Claims (8)

In semiconductor manufacturing equipment that irradiates ultraviolet rays while scanning semiconductor wafers,
An ultraviolet irradiation apparatus comprising irradiation means for irradiating the ultraviolet ray while repeatedly measuring the reflectance of the semiconductor wafer and controlling the light quantity of the ultraviolet ray at a wavelength in the vicinity of the ultraviolet ray to be irradiated. In the ultraviolet irradiation device according to claim 1,
The ultraviolet irradiation apparatus characterized in that a wavelength in the vicinity of the ultraviolet rays to be irradiated is a wavelength within a range of 10 to 450 nm. In the ultraviolet irradiation device according to claim 1,
An ultraviolet irradiation apparatus, wherein a light receiving element is arranged next to a light emitting element for measuring reflectance of the semiconductor wafer. In the ultraviolet irradiation device according to claim 3,
An ultraviolet irradiation apparatus, wherein two light receiving elements are arranged on both sides of a light emitting element for measuring reflectance of the semiconductor wafer. In the ultraviolet irradiation device according to claim 1,
An ultraviolet irradiation apparatus, wherein the light emitting element for measuring the reflectance of the semiconductor wafer and the light emitting element for process are arranged at the same position in the moving direction with respect to the semiconductor wafer. In the ultraviolet irradiation device according to any one of claims 1 to 5,
The ultraviolet irradiation apparatus for measuring the reflectance by dividing the timing of ultraviolet irradiation of the light emitting element for reflectance measurement of the semiconductor wafer with respect to the adjacent light emitting element for reflectance measurement. In the ultraviolet irradiation device according to any one of claims 1 to 6,
An ultraviolet irradiation apparatus characterized in that a change in the irradiation light amount can be freely changed by dividing the total amount of ultraviolet light irradiated onto the semiconductor wafer into a movement position of the semiconductor wafer and an irradiation light amount. . In a semiconductor manufacturing method of irradiating ultraviolet rays while scanning a semiconductor wafer,
An ultraviolet irradiation method, comprising: an irradiation step of irradiating the ultraviolet ray while repeatedly measuring the reflectance of the semiconductor wafer and controlling the light quantity of the ultraviolet ray at a wavelength in the vicinity of the ultraviolet ray to be irradiated.

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