JP2008270396A - Organic transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic transistor having large mobility, a large current on/off-ratio, and excellent storing stability. <P>SOLUTION: The organic transistor having an organic semiconductor layer contains at least one kind of a diindeno[1,2,3-de:1',2',3'-mn]anthracene derivative in the organic semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an organic transistor. More specifically, the present invention relates to an organic transistor using a specific organic compound in an organic semiconductor layer.

Conventionally, a thin film transistor (TFT) made of amorphous silicon or polycrystalline silicon has been widely used as a switching element for flat panel display such as a liquid crystal display device. However, a CVD apparatus used for manufacturing a thin film transistor using silicon is expensive, and manufacturing a large-sized thin film transistor element has a drawback of increasing manufacturing cost.
In addition, since amorphous silicon or polycrystalline silicon is formed at a high temperature, the substrate is light and flexible, but there is a problem that plastic materials with poor heat resistance cannot be used. .
In order to solve the above problem, an organic transistor (also referred to as an organic thin film transistor or an organic TFT) using an organic compound as an organic semiconductor layer instead of amorphous silicon or polycrystalline silicon has been proposed (Non-Patent Document 1). ).

As a method for forming the organic semiconductor layer, for example, a vacuum deposition method or a coating method is known. According to these film formation methods, it is easy to increase the size of the organic transistor element while suppressing the manufacturing cost. .
Furthermore, the temperature required for film formation can be lowered, and organic transistors using organic compounds can use plastic materials for the substrate, which can be applied to flexible display elements. Expectations are gathered for the transformation.

A practical organic transistor needs to have characteristics such as high charge mobility and a large current on / off ratio. Here, the term “on / off ratio” means the ratio of the current between the source electrode and the drain electrode when the organic transistor is on to the current between the source electrode and the drain electrode when the organic transistor is off. To do.
Furthermore, excellent storage stability is required for practical application of organic transistors.

To date, organic transistors using, for example, pentacene as the organic semiconductor layer have been proposed (Non-Patent Document 2).
However, an organic transistor using pentacene has a problem that it has a low function as an organic transistor in the atmosphere and low storage stability.
Furthermore, an organic transistor using a thiophene oligomer (α-hexathienylene) as an organic semiconductor layer has been proposed (Non-patent Document 3). However, the organic transistor also has a drawback that its storage stability in air is low.
Further, it is described that dibenzo [a, j] naphthacene and dibenzo [de, qr] naphthacene are useful for an organic semiconductor layer of an organic transistor (Patent Document 1). However, it has been found that organic transistors using these dibenzonaphthacenes in the organic semiconductor layer have a problem of low charge mobility.
At present, development of further improved organic transistors is required for practical use.
Appl. Phys. Lett. 63, 1372 (1993) Appl. Phys. Lett. , 72, 1854 (1998) Science, 268, 270 (1995) JP 2005-519486 A

To date, organic transistors using various organic compounds as organic semiconductor layers have been proposed, but none of them has practically satisfactory characteristics. .
In view of the above, the present invention is to provide an organic transistor having high charge mobility, a large current on / off ratio, and excellent storage stability.

  As a result of intensive studies in order to solve the above problems, the inventors of the present invention contain a diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative in an organic semiconductor layer. The organic transistor was found to have high charge mobility, a large current on / off ratio, and excellent storage stability, and the present invention was completed.

That is, the present invention
(1) An organic transistor having an organic semiconductor layer, wherein the organic semiconductor layer contains at least one diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative. And, moreover,
(2) An organic transistor in which a diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative is a compound represented by the general formula (1-A).

Wherein X _{1 to} X ₁₄ each independently represent a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, a linear, branched or cyclic alkoxy group, or a substituted or unsubstituted aryl group. )

  According to the present invention, it is possible to provide an organic transistor having a high charge mobility, a large current on / off ratio, and excellent storage stability.

Hereinafter, the present invention will be described in detail.

  The organic transistor of the present invention comprises an organic semiconductor layer containing at least one diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative.

  The diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative (hereinafter abbreviated as compound A according to the present invention) according to the present invention is represented by the general formula (1). The skeleton represented by the general formula (1) may have various substituents, preferably a compound represented by the general formula (1-A) It is.

Wherein X _{1 to} X ₁₄ each independently represent a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, a linear, branched or cyclic alkoxy group, or a substituted or unsubstituted aryl group. )
In the compound represented by the general formula (1-A), X _{1 to} X ₁₄ are each independently a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, a linear, branched or cyclic alkoxy group, Alternatively, it represents a substituted or unsubstituted aryl group. In the present specification, the aryl group represents a carbocyclic aromatic group such as a phenyl group or a naphthyl group, for example, a heterocyclic aromatic group such as a furyl group, a thienyl group or a pyridyl group. In the compound represented by the general formula (1-A), X _{1 to} X ₁₄ are more preferably a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, 20 represents a linear, branched or cyclic alkoxy group, or a substituted or unsubstituted aryl group having 4 to 20 carbon atoms.

Specific examples of X _{1 to} X ₁₄ in the general formula (1-A) include, for example, a hydrogen atom; a halogen atom such as a fluorine atom, a chlorine atom or a bromine atom; for example, a methyl group, an ethyl group, or n-propyl. Group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, n-pentyl group, isopentyl group, neopentyl group, tert-pentyl group, n-hexyl group, 1-methylpentyl group, 4-methyl-2-pentyl group, 3,3-dimethylbutyl group, 2-ethylbutyl group, n-heptyl group, 1-methylhexyl group, cyclohexylmethyl group, n-octyl group, tert-octyl group, 1-methyl Heptyl group, 2-ethylhexyl group, 2-propylpentyl group, n-nonyl group, 2,2-dimethylheptyl group, 2,6-dimethyl-4-heptyl group, 3 5,5-trimethylhexyl group, n-decyl group, n-undecyl group, 1-methyldecyl group, n-dodecyl group, n-tridecyl group, 1-hexylheptyl group, n-tetradecyl group, n-pentadecyl group, n -Hexadecyl group, n-heptadecyl group, n-octadecyl group, n-eicosyl group, cyclopentyl group, cyclohexyl group, 4-methylcyclohexyl group, 4-tert-butylcyclohexyl group, cycloheptyl group. A linear, branched or cyclic alkyl group such as a cyclooctyl group;

  For example, methoxy group, ethoxy group, n-propoxy group, isopropoxy group, n-butoxy group, isobutoxy group, sec-butoxy group, n-pentyloxy group, neopentyloxy group, cyclopentyloxy group, n-hexyloxy group 3,3-dimethylbutyloxy group, 2-ethylbutyloxy group, cyclohexyloxy group, n-heptyloxy group, n-octyloxy group, 2-ethylhexyloxy group, n-nonyloxy group, n-decyloxy group, n -Undecyloxy group, n-dodecyloxy group, n-tridecyloxy group, n-tetradecyloxy group, n-pentadecyloxy group, n-hexadecyloxy group, n-heptadecyloxy group, n-octadecyl group Linear, branched or cyclic alkoxy groups such as oxy group and n-eicosyloxy group;

  For example, phenyl group, 2-methylphenyl group, 3-methylphenyl group, 4-methylphenyl group, 4-ethylphenyl group, 4-n-propylphenyl group, 4-isopropylphenyl group, 4-n-butylphenyl group 4-isobutylphenyl group, 4-tert-butylphenyl group, 4-isopentylphenyl group, 4-tert-pentylphenyl group, 4-n-hexylphenyl group, 4-cyclohexylphenyl group, 4-n-heptylphenyl Group, 4-n-octylphenyl group, 4-n-nonylphenyl group, 4-n-decylphenyl group, 4-n-undecylphenyl group, 4-n-dodecylphenyl group, 4-n-tetradecylphenyl group Group, 2,3-dimethylphenyl group, 2,4-dimethylphenyl group, 2,5-dimethylphenyl group, 2,6-dimethylphenyl group 3,4-dimethylphenyl group, 3,5-dimethylphenyl group, 3,4,5-trimethylphenyl group, 2,3,5,6-tetramethylphenyl group, 5-indanyl group, 1,2,3, 4-tetrahydro-5-naphthyl group, 1,2,3,4-tetrahydro-6-naphthyl group,

  2-methoxyphenyl group, 3-methoxyphenyl group, 4-methoxyphenyl group, 3-ethoxyphenyl group, 4-ethoxyphenyl group, 4-n-propoxyphenyl group, 4-isopropoxyphenyl group, 4-n-butoxy Phenyl group, 4-isobutoxyphenyl group, 4-n-pentyloxyphenyl group, 4-n-hexyloxyphenyl group, 4-cyclohexyloxyphenyl group, 4-n-heptyloxyphenyl group, 4-n-octyloxy Phenyl group, 4-n-nonyloxyphenyl group, 4-n-decyloxyphenyl group, 4-n-undecyloxyphenyl group, 4-n-dodecyloxyphenyl group, 4-n-tetradecyloxyphenyl group, 2,3-dimethoxyphenyl group, 2,4-dimethoxyphenyl group, 2,5-dimethoxyphenyl group 3,4-dimethoxyphenyl group, 3,5-dimethoxyphenyl group, 3,5-diethoxyphenyl group, 2-methoxy-4-methylphenyl group, 2-methoxy-5-methylphenyl group, 2-methyl- 4-methoxyphenyl group, 3-methyl-4-methoxyphenyl group, 3-methyl-5-methoxyphenyl group,

  2-fluorophenyl group, 3-fluorophenyl group, 4-fluorophenyl group, 2-chlorophenyl group, 3-chlorophenyl group, 4-chlorophenyl group, 4-bromophenyl group, 4-trifluoromethylphenyl group, 2,4 -Difluorophenyl group, 2,4-dichlorophenyl group, 3,4-dichlorophenyl group, 3,5-dichlorophenyl group, 2-methyl-4-chlorophenyl group, 2-chloro-4-methylphenyl group, 3-chloro-4 -Methylphenyl group, 2-chloro-4-methoxyphenyl group, 3-methoxy-4-fluorophenyl group, 3-methoxy-4-chlorophenyl group, 3-fluoro-4-methoxyphenyl group, 4-phenylphenyl group, 3-phenylphenyl group, 4- (4′-methylphenyl) phenyl group, 4- (4′-methoxy) Phenyl), phenyl group, 1-naphthyl group, 2-naphthyl group, 4-methyl-1-naphthyl group, 4-ethoxy-1-naphthyl group, 6-n-butyl-2-naphthyl group, 6-methoxy-2- Naphthyl group, 7-ethoxy-2-naphthyl group, 2-furyl group, 2-thienyl group, 5-n-hexyl-2-thienyl group, 5- (2′-thienyl) -2-thienyl group, 3-thienyl And a substituted or unsubstituted aryl group such as a group, 2-pyridyl group, 3-pyridyl group, and 4-pyridyl group.

More preferably, X _{1 to} X ₁₄ are a hydrogen atom, a fluorine atom, a chlorine atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 12 carbon atoms.
The organic transistor of the present invention is characterized in that the organic semiconductor layer contains at least one diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative. Thus, it is possible to provide an organic transistor that has a high charge mobility, a large current on / off ratio, and excellent storage stability, which has not been obtained conventionally.
Specific examples of the compound A according to the present invention include the following compounds, but the present invention is not limited thereto.

The compound A according to the present invention, for example, the compound represented by the general formula (1-A) can be produced by referring to a method known per se.
That is, for example, it can be produced by reacting a compound represented by the general formula (2) with a palladium catalyst (for example, triphenylphosphine palladium chloride) in the presence of a base [for example, J. et al. Org. Chem. 68, 883 (2003), Chem. Rev. 107, 174 (2007) can be referred to].

[Wherein, X _{1 to} X ₁₄ represent the same meaning as in the general formula (1-A), and Z ₁ and Z ₂ represent a halogen atom]
In the general formula (2), Z ₁ and Z ₂ represents a halogen atom, preferably represents a chlorine atom, a bromine atom, an iodine atom.

  The compound A according to the present invention may be produced in a form that forms a solvate with a solvent used in some cases (for example, an aromatic hydrocarbon solvent such as toluene). In addition to the non-solvate of Compound A according to the present invention, such a solvate can also be used. When the compound A according to the present invention is used in an organic transistor, a recrystallization method, a column chromatography method, a purification method such as a sublimation purification method, or a compound having an increased purity by using these methods in combination. Is preferred.

  The organic transistor usually includes a source electrode, a drain electrode and a gate electrode, a gate insulating layer, and an organic semiconductor layer. In the organic transistor of the present invention, diindeno [1,2 , 3-de: 1 ′, 2 ′, 3′-mn] containing at least one anthracene derivative.

  The form of the organic transistor of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic cross-sectional view showing an embodiment of the organic transistor of the present invention.
In the form of this organic transistor, a gate electrode 21 is provided on a substrate 11, a gate insulating layer 31 is laminated on the gate electrode, and a source electrode 61 and a drain electrode formed on the gate electrode at predetermined intervals. 41 is formed, and an organic semiconductor layer 51 is further stacked thereon (bottom gate / bottom contact structure).

  In the form of the organic transistor shown in FIG. 2, the gate electrode 22 is provided on the substrate 12, the gate insulating layer 32 is laminated on the gate electrode, and the organic semiconductor layer 52 is laminated thereon. Further, a source electrode 62 and a drain electrode 42 are formed at a predetermined interval thereon (bottom gate / top contact structure).

  In the form of the organic transistor shown in FIG. 3, the source electrode 63 and the drain electrode 43 are formed on the substrate 13 at a predetermined interval, and the organic semiconductor layer 53 is laminated thereon, A gate insulating layer 33 is laminated thereon, and a gate electrode 23 is further provided thereon (top gate / bottom contact structure).

  In the form of the organic transistor shown in FIG. 4, the organic semiconductor layer 54 is laminated on the substrate 14, and the source electrode 64 and the drain electrode 44 are formed on the substrate 14 at a predetermined interval. A gate insulating layer 34 is laminated thereon, and a gate electrode 24 is further provided thereon (top gate / top contact structure).

  In the organic transistor having such a structure, the organic semiconductor layer forms a channel region, and the current flowing between the source electrode and the drain electrode is controlled by the voltage applied to the gate electrode, thereby turning on / off. Operate.

  The substrate used in the organic transistor of the present invention is not particularly limited, but generally, glass, quartz, silicon single crystal, polycrystalline silicon, amorphous silicon, a plastic substrate, or the like can be used. Furthermore, a composite substrate in which these are combined can be used, and may have a single-layer structure or a multilayer structure.

Examples of the plastic substrate include polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, triacetylcellulose, and cellulose acetate propionate. A substrate is mentioned.
Note that when a conductive substrate, for example, silicon is used for the substrate, the substrate can also serve as the gate electrode.

In the organic transistor of the present invention, materials used for the source electrode, the drain electrode, and the gate electrode are not particularly limited, and any material can be used as long as it is a conductive material.
Examples of the electrode material include indium tin oxide alloy (ITO), tin oxide, gold, silver, platinum, copper, indium, aluminum, magnesium, nickel, chromium, iron, tin, tantalum, palladium, tellurium, iridium, ruthenium, Germanium, tungsten, lithium, beryllium, sodium, potassium, calcium, zinc, magnesium / indium alloy, magnesium / copper alloy, magnesium / silver alloy, magnesium / aluminum alloy, chromium / molybdenum alloy, aluminum / lithium alloy, aluminum / scandium / Metals and alloys such as lithium alloys and sodium / potassium alloys, as well as fluorine-doped zinc oxide, silicon single crystal, polycrystalline silicon, amorphous silicon, carbon, graphite, glassy carbon, silver Strike, it is possible and carbon paste, and more preferably, indium tin oxide alloy, gold, silver, platinum, indium, aluminum, silicon single crystal, polycrystalline silicon, amorphous silicon carbon.

In addition, as an electrode material, a conductive polymer whose conductivity has been improved by doping treatment (eg, polyaniline, polypyrrole, polythiophene, polyacetylene, polyparaphenylene, polyethylenedioxythiophene (PEDOT) and polystyrene sulfonic acid complex, etc.) Are also preferably used.
These electrode materials may be used alone or in combination.
Among the electrode materials listed above, the source electrode and the drain electrode are preferably those having a small electric resistance at the contact surface with the organic semiconductor layer.

A method for forming each electrode is not particularly limited. For example, a conductive material can be formed using a method such as vapor deposition or sputtering, and patterned into a desired shape by lithograph or etching treatment. it can.
In addition, when an electrode is formed using a conductive polymer, a conductive polymer solution or dispersion, or a conductive fine particle dispersion may be patterned by an ink jet method, and lithographic or laser ablation may be performed from a coating film. You may form by. Furthermore, a method of patterning an ink containing a conductive polymer or conductive fine particles, a conductive paste, or the like by a printing method such as relief printing, intaglio printing, planographic printing, or screen printing can also be used.

The film thickness of the source electrode and the drain electrode is not particularly limited, but in general, it is preferably set in the range of several nm to several hundred μm, more preferably 1 nm to 100 μm, and still more preferably 10 nm. ˜20 μm.
The source electrode and the drain electrode are arranged so as to face each other, and the interval (channel length) is generally preferably set in the range of several hundred nm to several mm, more preferably 100 nm to It is 1 mm, More preferably, it is 1 micrometer-500 micrometers.

As a material used for the gate insulating layer, various insulating materials can be used, and an inorganic oxide or an organic polymer compound is preferable.
Examples of inorganic oxides include silicon oxide (SiO ₂ ), silicon nitride, aluminum oxide, aluminum nitride, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate. , Lead lanthanum titanate, strontium titanate, barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth titanate, strontium bismuth tantalate, bismuth tantalate niobate, trioxide yttrium, and more Preferred are silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, and titanium oxide.

  Examples of the method for forming the inorganic oxide insulator layer include a vacuum deposition method, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, and an atmospheric pressure plasma method. Dry coating process, spray coating method, spin coating method, blade coating method, dip coating method, casting method, roll coating method, bar coating method, die coating method, air knife method, slide hopper method, extrusion method, etc. Wet processes such as coating methods, various printing methods, and ink jet methods can be used, and can be selected and applied as appropriate according to the characteristics of the materials used.

Examples of the organic polymer compound used for the gate insulating layer include polyimide, polyamide, polyester, polyacrylate, photo-radical polymerization photo-curing resin, photo-cation polymerization photo-curing resin, or a copolymer containing an acrylonitrile component. Polyvinylphenol, polyvinyl alcohol, polystyrene, novolac resin, polyvinylidene fluoride, cyanoethyl pullulan, and the like can be used. As a method for forming a gate insulating layer using an organic polymer compound, a wet process is preferable.
The insulating material used for the gate insulating layer may be used alone or in combination.

  Note that the interface between the gate insulating layer and the organic semiconductor layer may be treated with, for example, hexamethyldisilazane, octadecyltrimethoxysilane, octadecyltrichlorosilane, benzyltrichlorosilane, or the like. When used for a layer, it may be subjected to a rubbing treatment.

  The thickness of the gate insulating layer is not particularly limited, but generally it is preferably set in the range of several nm to several tens of μm, more preferably 5 nm to 10 μm, and still more preferably 10 nm to 5 μm. It is.

  The organic transistor of the present invention comprises at least one compound A according to the present invention in an organic semiconductor layer, and the compound A according to the present invention may be used alone or in combination. Good.

  Further, the organic semiconductor layer is composed of the compound A according to the present invention and other compounds (for example, polyacetylene derivative, polythiophene derivative, polythienylene vinylene derivative, polyphenylene derivative, polyphenylene vinylene derivative, polypyrrole derivative, polyaniline derivative, polyquinoline derivative, perylene. Derivatives, tetracene derivatives, pentacene derivatives, phthalocyanine derivatives, and the like). In this case, the content of the compound A according to the present invention is preferably 20% by weight or more, and more preferably 50% by weight or more.

  The organic transistor of the present invention functions as a p-type (holes function as a carrier) organic transistor or an n-type (electrons function as a carrier) organic transistor, preferably as a p-type organic transistor. It is preferred to use.

The method for forming the organic semiconductor layer is not particularly limited, and a known formation method can be used.
As the formation method, for example, a vacuum deposition method, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, a dry polymerization process such as a plasma polymerization method, an electrolytic polymerization method, Chemical polymerization method, spray coating method, spin coating method, blade coating method, dip coating method, casting method, roll coating method, bar coating method, die coating method, LB method (Langmuir / Blodget method), various printing methods, ink jet method And wet processes such as

  When the organic semiconductor layer is formed by a wet process, a solution in which the compound A according to the present invention is dissolved or dispersed in a solvent is used.

  Examples of such solvents include alcohol solvents such as water, methanol, ethanol, isopropyl alcohol, and butanol; ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; ester solvents such as ethyl acetate and butyl acetate; Ether solvents such as ether, dioxane, tetrahydrofuran, anisole, hydrocarbon solvents such as hexane, octane, toluene, xylene, ethylbenzene, cumene, dichloromethane, chloroform, dichloroethane, tetrachloroethane, tetrachloroethylene, chlorobenzene, fluorobenzene, dichlorobenzene, Halogenated hydrocarbon solvents such as trichlorobenzene, acetonitrile, propionitrile, methoxyacetonitrile, gluta Examples include nitrile solvents such as dinitrile and benzonitrile, aprotic polar solvents such as dimethyl sulfoxide, sulfolane, N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone. Can do. These solvents may be used alone or in combination.

  The film thickness of the organic semiconductor layer is not particularly limited, but in general, it is preferably set in the range of several nm to several tens of μm, more preferably 1 nm to 10 μm, still more preferably 5 nm to 1 μm.

In the organic transistor of the present invention, the organic semiconductor layer may be subjected to a doping treatment if desired.
In addition, as a dopant, both a donor-type dopant and an acceptor-type dopant can be used, and it is preferable to use an acceptor-type dopant.

As the donor dopant, any compound having a function of donating electrons to the organic compound of the organic semiconductor layer can be preferably used.
Examples of the donor dopant include alkali metals such as Li, Na, K, Rb, and Cs, alkaline earth metals such as Ca, Sr, and Ba, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Rb, Dy, Ho, Er, Yb and other rare earth metals, ammonium ions, R ₄ P ⁺ (R represents an alkyl group), R ₄ As ⁺ (R represents an alkyl group), R ₃ S ⁺ (R represents Represents an alkyl group), and acetylcholine.

As the acceptor dopant, any compound having a function of removing electrons from the organic compound of the organic semiconductor layer can be preferably used.
Examples of the acceptor dopant include halogen compounds such as Cl ₂ , Br ₂ , I ₂ , ICl, ICl ₃ , IBr and IF, PF ₅ , AsF ₅ , SbF ₅ , BF ₃ , BCl ₃ , BBr ₃ and SO _3. Lewis acids such as HF, HCl, HNO ₃ , H ₂ SO ₄ , HClO ₄ , FSO ₃ H, ClSO ₃ H, CF ₃ SO ₃ H and other organic acids such as acetic acid, formic acid and amino acids, FeCl ₃ , FeOCl, TiCl ₄ , ZrCl ₄ , HfCl ₄ , NbF ₅ , NbCl ₅ , TaCl ₅ , MoCl ₅ , WF ₅ , WCl ₆ , UF ₆ , LnCl ₃ (Ln = La, Ce, Nd, Pr and other lanthanoids ) a transition metal compound, such ^{as, Cl -, Br -, I} -, ClO 4 -, PF 6 -, AsF 5 -, SbF 6 -, BF 4 -, electrolyte anions such as sulfonate anion Etc., and the like.

  As a doping method, a method of introducing a dopant after forming an organic semiconductor layer, or a method of introducing a dopant at the time of forming the organic semiconductor layer can be applied.

  Moreover, the organic transistor of this invention can also provide a gas barrier layer in the whole or part of the outer peripheral surface of an organic transistor in order to reduce the influence of oxygen, moisture, etc. in the atmosphere. Examples of the material for forming the gas barrier layer include polyvinyl alcohol, ethylene-vinyl alcohol copolymer, polyvinyl chloride, and polyvinylidene chloride. Furthermore, the inorganic oxides mentioned as materials used for the gate insulating layer can also be used for forming the gas barrier layer.

  In addition, the organic transistor of this invention can be used for a liquid crystal display element, an organic electroluminescent element, electronic paper, various sensors, RFID (radio frequency identification cards) etc., for example.

EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to these.
Example 1
A thermal oxide film (SiO ₂ ) having a thickness of 200 nm was formed on a silicon substrate having a resistivity of 0.02 Ω · cm as a gate electrode. Here, the silicon substrate itself becomes the gate electrode, and the SiO ₂ layer formed on the surface of the silicon substrate becomes the gate insulating layer. On top of this, the compound of Exemplified Compound No. 1 was deposited to a thickness of 30 nm under vacuum (5 × 10 ⁻⁴ Pa) at a deposition rate of 0.03 nm / sec to form an organic semiconductor layer. Further, a source electrode and a drain electrode were formed thereon by vapor-depositing gold using a mask. The source and drain electrodes had a thickness of 40 nm, a channel width of 5 mm, and a channel length of 20 μm.

The organic transistor manufactured as described above exhibited characteristics as a p-type transistor element. The charge mobility was determined from the saturation region of the current-voltage (IV) characteristics of the organic transistor.
Further, the drain current value was measured when the drain bias was −50 V and the gate bias was −50 V and 0 V, and the current on / off ratio was obtained.
Furthermore, after storing the produced organic transistor element in the atmosphere at 25 ° C. for one month, the charge mobility and the on / off ratio of the current were measured again. The measurement results are shown in Table 1.

(Examples 2 to 10)
In Example 1, in the formation of the organic semiconductor layer, instead of using the compound of exemplary compound number 1, the compound of exemplary compound number 6 (Example 2), the compound of exemplary compound number 7 (Example 3), and the exemplary compound Compound No. 12 (Example 4), Compound No. 20 (Example 5), Compound No. 24 (Example 6), Compound No. 34 (Example 7), Example No. 39 The organic transistor was prepared by the method described in Example 1 except that the compound of Example Compound No. 45 (Example 9), the compound of Example Compound No. 45 (Example 9), and the compound of Example Compound No. 51 (Example 10) were used. did.
Further, the characteristics of the organic transistor were examined by the method described in Example 1, and the results are shown in Table 1.

(Comparative Example 1)
In Example 1, an organic transistor was produced by the method described in Example 1 except that pentacene was used instead of using the compound of Exemplary Compound No. 1 when forming the organic semiconductor layer.
Further, the characteristics of the organic transistor were examined by the method described in Example 1, and the results are shown in Table 1.
In addition, the characteristic as an organic transistor was not shown after leaving for one month.
(Comparative Example 2)
In Example 1, an organic transistor was produced by the method described in Example 1 except that α-hexathienylene was used instead of the compound of Example Compound No. 1 in forming the organic semiconductor layer.
Further, the characteristics of the organic transistor were examined by the method described in Example 1, and the results are shown in Table 1.
(Comparative Example 3)
In Example 1, an organic transistor was produced by the method described in Example 1 except that dibenzo [a, j] naphthacene was used instead of the compound of Exemplified Compound No. 1 in forming the organic semiconductor layer. did.
Further, the characteristics of the organic transistor were examined by the method described in Example 1, and the results are shown in Table 1.
(Comparative Example 4)
In Example 1, an organic transistor was produced by the method described in Example 1 except that dibenzo [de, qr] naphthacene was used instead of the compound of Exemplified Compound No. 1 when forming the organic semiconductor layer. did.
Further, the characteristics of the organic transistor were examined by the method described in Example 1, and the results are shown in Table 1.

(Example 11)
A thermal oxide film (SiO ₂ ) having a thickness of 200 nm was formed on a silicon substrate having a resistivity of 0.02 Ω · cm as a gate electrode. Here, the silicon substrate itself becomes the gate electrode, and the SiO ₂ layer formed on the surface of the silicon substrate becomes the gate insulating layer. When the silicon substrate was heated to 80 ° C. and a chlorobenzene solution (concentration: 10% by weight) of the compound of Exemplified Compound No. 9 was applied on the silicon substrate, the chlorobenzene evaporated to give an Exemplified Compound No. 9 having a thickness of 50 nm. An organic semiconductor layer made of the above compound was formed. Further, a source electrode and a drain electrode were formed thereon by vapor-depositing gold using a mask. The source and drain electrodes had a thickness of 40 nm, a channel width of 5 mm, and a channel length of 20 μm.
Further, when the characteristics of the organic transistor were examined by the method described in Example 1, the mobility was 2.7 × 10 ⁻² (cm ² / Vsec), and the current on / off ratio was 2.6. × 10 ⁵
(Example 12)
In Example 11, when the organic semiconductor layer was formed, an organic transistor was produced by the method described in Example 11 except that the compound of exemplary compound number 43 was used instead of the compound of exemplary compound number 9 .
Furthermore, when the characteristics of the organic transistor were examined by the method described in Example 1, the mobility was 2.9 × 10 ⁻² (cm ² / Vsec), and the current on / off ratio was 2.9. × 10 ⁵

  From Table 1, the organic transistor of the present invention has a high charge mobility, a large current on / off ratio, has excellent characteristics as an organic transistor, and further has a stable change with time. It is clear that it is an excellent organic transistor.

The organic transistor of the present invention has high charge mobility, a large current on / off ratio, and excellent storage stability. The liquid crystal display element, organic electroluminescent element, electronic paper, various sensors, RFIDs (radio frequency) identification cards) and the like.

It is typical sectional drawing of the organic transistor of this invention. It is typical sectional drawing of the organic transistor of this invention. It is typical sectional drawing of the organic transistor of this invention. It is typical sectional drawing of the organic transistor of this invention.

Explanation of symbols

11: Substrate 21: Gate electrode 31: Gate insulating layer 41: Drain electrode 51: Organic semiconductor layer 61: Source electrode

12: Substrate 22: Gate electrode 32: Gate insulating layer 42: Drain electrode 52: Organic semiconductor layer 62: Source electrode

13: Substrate 23: Gate electrode 33: Gate insulating layer 43: Drain electrode 53: Organic semiconductor layer 63: Source electrode

14: Substrate 24: Gate electrode 34: Gate insulating layer 44: Drain electrode 54: Organic semiconductor layer 64: Source electrode

Claims (2)

An organic transistor having an organic semiconductor layer, wherein the organic semiconductor layer contains at least one diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative. 2. The organic transistor according to claim 1, wherein the diindeno [1,2,3-de: 1 ′, 2 ′, 3′-mn] anthracene derivative is a compound represented by the general formula (1-A).

Wherein X _{1 to} X ₁₄ each independently represent a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, a linear, branched or cyclic alkoxy group, or a substituted or unsubstituted aryl group. )

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