JP2008217811A5 - - Google Patents

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Publication number
JP2008217811A5
JP2008217811A5 JP2008097026A JP2008097026A JP2008217811A5 JP 2008217811 A5 JP2008217811 A5 JP 2008217811A5 JP 2008097026 A JP2008097026 A JP 2008097026A JP 2008097026 A JP2008097026 A JP 2008097026A JP 2008217811 A5 JP2008217811 A5 JP 2008217811A5
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Japan
Prior art keywords
memory device
nonvolatile memory
memory
data
failed
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Pending
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JP2008097026A
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Japanese (ja)
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JP2008217811A (en
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Priority to JP2008097026A priority Critical patent/JP2008217811A/en
Priority claimed from JP2008097026A external-priority patent/JP2008217811A/en
Publication of JP2008217811A publication Critical patent/JP2008217811A/en
Publication of JP2008217811A5 publication Critical patent/JP2008217811A5/ja
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Claims (5)

計算機に接続されるストレージシステムであって、A storage system connected to a computer,
前記計算機に接続されるホストインタフェース部と、A host interface unit connected to the computer;
前記ホストインタフェース部に接続されるメモリパスと、A memory path connected to the host interface unit;
前記メモリパスに接続され、前記計算機から送受信されるデータを一時的に格納するキャッシュメモリ部と、A cache memory unit that is connected to the memory path and temporarily stores data transmitted and received from the computer;
前記メモリパスに接続され、前記計算機から送受信されるデータの入出力を制御するメモリコントローラ部と、A memory controller that is connected to the memory path and controls input / output of data transmitted and received from the computer;
前記メモリコントローラ部に接続され、前記計算機から送受信されるデータを格納する複数の不揮発メモリ部と、A plurality of nonvolatile memory units connected to the memory controller unit for storing data transmitted and received from the computer;
を有し、Have
前記不揮発メモリ部は、複数の不揮発メモリデバイスとスペア不揮発メモリデバイスとを備え、The nonvolatile memory unit includes a plurality of nonvolatile memory devices and spare nonvolatile memory devices,
前記複数の不揮発メモリデバイス及び前記スペア不揮発メモリデバイスは、複数のブロックから構成されており、前記計算機から当該複数の不揮発メモリデバイスヘのデータの格納は当該ブロック単位で実行され、The plurality of nonvolatile memory devices and the spare nonvolatile memory device are composed of a plurality of blocks, and storage of data from the computer to the plurality of nonvolatile memory devices is executed in units of the blocks,
前記メモリコントローラ部は、前記複数のメモリデバイス内のブロックに障害が起こった場合、当該障害ブロック内のデータを前記スペア不揮発メモリデバイスヘコピーして、当該障害ブロックヘのアクセスを当該スペア不揮発メモリデバイスヘと切り替え、When a failure occurs in a block in the plurality of memory devices, the memory controller unit copies data in the failed block to the spare nonvolatile memory device, and accesses the failed block to the spare nonvolatile memory device. And switch
前記メモリコントローラ部は、前記障害ブロックを有するメモリデバイス内の障害ブロック数が予め設定された閾値を超えた場合には、当該閾値を超えた不揮発メモリデバイスの交換を示唆することを特徴とするストレージシステム。The memory controller unit, when the number of failed blocks in a memory device having the failed block exceeds a preset threshold, suggests replacement of a non-volatile memory device exceeding the threshold system.
前記ブロックに障害が起こった場合とは、前記不揮発メモリデバイスの更新回数が予め設定された閾値を超えた場合であることを特徴とする請求項1記載のストレージシステム。The storage system according to claim 1, wherein the case where a failure has occurred in the block is a case where the number of updates of the nonvolatile memory device exceeds a preset threshold value. 前記メモリコントローラ部は、前記障害ブロックを有するメモリデバイス内の障害ブロック数が予め設定された閾値を超えた場合、当該メモリデバイスを交換し、前記複数のメモリデバイス及び前記スペア不揮発メモリデバイスから新メモリデバイスヘデータを復元することを特徴とする請求項1記載のストレージシステム。When the number of failed blocks in the memory device having the failed block exceeds a preset threshold, the memory controller unit replaces the memory device and starts a new memory from the plurality of memory devices and the spare nonvolatile memory device. The storage system according to claim 1, wherein data is restored to the device. 前記メモリコントローラ部は、前記障害ブロックを有するメモリデバイス内の障害ブロック数が予め設定された閾値を超えた場合、当該メモリデバイスを交換し、前記新メモリデバイスヘ前記スペア不揮発メモリデバイス内の交替データを復元し、当該スペア不揮発メモリデバイスに交替データがないブロックについては、当該障害ブロックを除く前記複数の不揮発メモリデバイス内からデータを読み込み、パリティ演算を行うことによってデータを復元することを特徴とする請求項3記載のストレージシステム。The memory controller unit replaces the memory device when the number of failed blocks in the memory device having the failed block exceeds a preset threshold, and replaces the replacement data in the spare non-volatile memory device with the new memory device. In the case of a block having no replacement data in the spare nonvolatile memory device, the data is restored by reading the data from the plurality of nonvolatile memory devices excluding the failed block and performing a parity operation. The storage system according to claim 3. 当該閾値を超えた不揮発メモリデバイスの交換を示唆する方法として、当該不揮発メモリデバイスが有するインジケータを点灯することを特徴とする請求項1記載のストレージシステム。The storage system according to claim 1, wherein an indicator of the nonvolatile memory device is turned on as a method for suggesting replacement of the nonvolatile memory device exceeding the threshold.
JP2008097026A 2008-04-03 2008-04-03 Disk controller using nonvolatile memory Pending JP2008217811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008097026A JP2008217811A (en) 2008-04-03 2008-04-03 Disk controller using nonvolatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008097026A JP2008217811A (en) 2008-04-03 2008-04-03 Disk controller using nonvolatile memory

Related Parent Applications (1)

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JP2002178537A Division JP2004021811A (en) 2002-06-19 2002-06-19 Disk controller using nonvolatile memory

Publications (2)

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JP2008217811A JP2008217811A (en) 2008-09-18
JP2008217811A5 true JP2008217811A5 (en) 2009-05-14

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JP6073717B2 (en) * 2013-03-18 2017-02-01 富士通株式会社 Storage control device and storage system

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JPH01269299A (en) * 1988-04-20 1989-10-26 Hitachi Ltd Semiconductor memory device
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