JP2008211018A - Sample holder, inspecting apparatus using the same, and sample treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that a particle floating toward a sample cannot be removed and damage such as a shortage between circuit patterns is easily given to an electric circuit in a particle removing method using electrostatic adsorption. <P>SOLUTION: A sample holder comprises a mounting portion 12 having a region to which a sample 11 is mounted, a sample electrode 13 for applying to the sample a positive voltage or a negative voltage relative to ground potential, a first electrode 14 to which a voltage opposite to the application voltage of the sample electrode 13 in terms of positive and negative properties is applied and which is arranged separately from the sample electrode 13 on the periphery of the sample mounting region, and a second electrode 15 to which a voltage the value of which is different from that of the application voltage of the first electrode 14 is applied and which is arranged separately from the first electrode 14 on the periphery of the sample mounting region. The sample holder comprises a resistive element 16 which is arranged between the first electrode 14 and the second electrode 15 and which is electrically conducted to the first electrode 14 and the second electrode 15. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention is used for an inspection apparatus such as a scanning electron microscope (SEM) or a scanning ion microscope used when inspecting or observing various samples such as a semiconductor wafer or a mask using an electron beam, an ion beam, or the like. In particular, it is a sample holder having a structure that prevents dust and dust floating inside the apparatus from scattering to the sample. Further, the inspection apparatus using the sample holder and the sample are processed using charged particles. The present invention relates to a sample processing method.

  2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, an inspection apparatus using charged particles such as a scanning electron beam microscope (hereinafter referred to as SEM) is used when observing and inspecting a wafer, a mask, and the like with high resolution. FIG. 4 is an exploded perspective view schematically showing the structure of the SEM. The SEM emits a so-called electron beam 140 consisting of a bundle of electrons from the electron gun 51 using the extraction electrode 52, accelerates the electron beam 140 by the acceleration electrode 53, and deflects and scans by the deflection electrode 54. It is possible to observe the shape and the like of the surface of the sample 131 by irradiating the predetermined position and detecting the secondary electrons and reflected electrons emitted from the sample 131 by the collision of the electrons with the detector 56. Since the electron beam 140 is used in a vacuum environment due to its nature, and it is difficult to perform a large deflection scanning such as several millimeters, the sample 131 is moved by an XY stage equipped with a sample holder 130 for holding the sample 131. It is necessary to freely move to a predetermined coordinate in the sample chamber, which is a vacuum container.

  In recent years, with the high integration of semiconductor elements, the line width of a circuit pattern formed on a semiconductor wafer has been reduced to several tens of nanometers, and the size or particle size of dust and dust (hereinafter referred to as particles) affecting the circuit pattern. However, the demand for reducing the adhesion of particles on the sample is increasing.

  A sample holder for holding a sample provided in the SEM will be described with reference to FIGS. 5A is a perspective view, FIG. 5B is a cross-sectional view taken along the line BB in FIG. 5A, and FIG. 5C is an enlarged cross-sectional view of a part of FIG.

  A general sample holder 130 shown in Patent Document 1 includes a mounting portion 132 for mounting a sample 131 such as a semiconductor wafer, and a sample electrode 133 that fixes the sample 131 and can apply a voltage to the sample 131 at the same time. The sample 131 can be inspected by irradiating the sample 131 with an electron beam 140 emitted from an electron gun (not shown).

  With the miniaturization of the semiconductor circuit pattern, the electron beam 140 is used as a sample for the purpose of improving the emission efficiency of counter-scattered electrons such as secondary electrons emitted by the high-speed electron beam irradiated on the sample and preventing damage to the circuit pattern. In order to decelerate immediately before irradiating 131, a negative voltage is applied to sample 131 via sample electrode 133.

  Here, the structure of the sample electrode 133 will be described with reference to FIG. 5C. An elastic portion 141 made of a coil spring or the like, a tip portion 142 that contacts the sample 131 and applies a voltage, and an elastic portion 141 are used. The electrode main body 143 that transmits the generated force to the distal end portion 142 and the frame 144 that is fixed to the base 134 and surrounds and holds the elastic portion 141 and the electrode main body 143 are formed. The electrode main body 143 includes an upper lid of the flange 143a and the frame 144 The elastic portion 141 sandwiched between 144 a receives a force in the direction of pressing the sample 131, and the sample 131 can be pressed by the tip portion 142. When a voltage is applied to the electrode body 143, a voltage can be applied to the sample 131 from the tip end portion 142. Further, when removing the sample 131, the electrode body 143 is lifted upward, and the outer diameter of the column 143b of the electrode body 143 and the inner diameter portion of the upper lid 144a of the frame 144 can be rotated / slid. Is possible. The sample electrode 133 and the base 134 are electrically insulated.

  However, when a negative voltage is applied to the sample 131, there arises a problem that positively charged particles such as dust and dirt floating inside the SEM are attracted to the sample 131 by electrostatic attraction force. When the particles adhere to the sample 131, the completed electric circuit such as a short circuit between the circuit patterns will be fatally damaged. In particular, positively charged particles are easily attracted to the sample 131, and a large amount of particles are adsorbed to the sample 131, and the yield is greatly deteriorated as compared with the case where no voltage is applied to the sample 131. It was.

  As a method for solving this problem, Patent Literature 2 and Patent Literature 3 propose a particle removal method using electrostatic force.

  The structure of Patent Document 2 is shown in FIGS. An adsorption electrode 136 is disposed around the placement portion 132 of the sample 131 so as to be separated from the sample electrode 133. As shown in FIG. 6B, the adsorption electrode 136 is composed of an insulator 135 and adsorption electrode portions 136a and 136b for applying a voltage from the bottom surface of the insulator 135, and charged particles floating in the SEM. In this mechanism, the insulator 135 is attracted by an electrostatic attraction force.

The structure of Patent Document 3 is shown in FIGS. In the removal method according to Patent Document 3, when a voltage is applied to the sample, attention is paid to the point that particles scattered on the sample surface are adsorbed by the sample potential and adhere to the sample surface, and the voltage applied to the sample around the sample It has an electrode part that is opposite to the positive and negative and has a voltage that is equal to the absolute value of the applied voltage of the sample, and suppresses particles from adhering to the sample surface with electrostatic repulsion. . For example, as shown in FIG. 7A, a repulsive electrode 137 is arranged around the sample 131 with respect to the sample mounting part 132 having the sample electrode 133 that applies a voltage to the sample 131 and applied to the sample 131. Applying a voltage that is opposite in polarity to the voltage and having the same absolute value, an electrostatic force is generated between the particles adsorbed to the sample 131, and the particles are removed to the outside by the repulsive force of the repulsive electrode 137. ing.
JP 2004-31840 A Japanese Patent No. 3348223 JP 2006-332505 A

  It is thought that a lot of charged particles are generated due to frictional wear at the sliding part and guide part for driving the stage and rubbing of the cable cover, so it is difficult to completely eliminate the generation of particles. is there. Whether it is positively or negatively charged depends on the material of the friction member that is the source of generation, but is also easily influenced by the surrounding environment, and charged by causes other than friction such as collision of charged particles such as electrons. Therefore, it is difficult to completely estimate whether the particles are charged positively or negatively. For this reason, in the removal method disclosed in Patent Document 2, particles that are electrostatically charged with the opposite polarity of the electrostatic adsorption member cannot be electrostatically adsorbed, and the particles once adsorbed are also charged by the movement of charge from the electrostatic adsorption member. If neutralized, the electrostatic adsorption force will be lost and it will float again, and it is very difficult to avoid scattering of the electrically neutralized particles onto the sample. Yes.

  In the removal method of Patent Document 3, the positional relationship between the repulsive electrode 137 and another voltage such as the ground existing around the repellent electrode 137 greatly affects the formation of equipotential lines. In other words, the electrostatic repulsive force received by the charged particles receives a force in a direction perpendicular to the equipotential lines, so the closer to the parallel the formed equipotential lines are, the more effective the particle removal effect is. It has the problem of decreasing.

  For example, as shown in FIG. 7B, when a sample holder is used in an inspection apparatus using an electron beam, the wall surface of a metal vacuum vessel exists near the upper surface of the sample, and most of the vacuum vessels are grounded. Since an equipotential line is formed as shown in FIG. 7B, particles moving in the direction of the sample 131 near the wall surface of the vacuum vessel are less likely to receive a repulsive force in the moving direction. .

  The positive and negative charge polarity of the particles is determined by the charge train. For example, when the particles are fine powders such as glass, ceramics, nylon, rayon, aluminum, etc., they are easily charged positively, and the particles are made of acrylic, polyethylene, polystyrene, polytetrafluoroethylene, polyester, acrylic, vinyl chloride, stainless steel, etc. It has been reported that in the case of fine powder, it tends to be negatively charged.

  In order to solve the above-described problems, the present invention provides a mounting portion having a region for mounting a sample, a sample electrode for applying a positive or negative voltage to the sample with respect to the ground potential, and application of the sample electrode A voltage that is opposite in polarity to the voltage is applied, a first electrode that is spaced from the sample electrode and is disposed around the sample mounting region, and a voltage that is different from the voltage applied to the first electrode is applied. And a second electrode disposed around the sample mounting region at a distance from the first electrode, and is disposed between the first electrode and the second electrode, and the first electrode and Each of the second electrodes is provided with a resistor that is electrically conductive.

  The second electrode is applied with a voltage having the same positive and negative voltage as the applied voltage of the first electrode and a small absolute value.

  The second electrode is grounded to the ground.

  The first electrode is applied with a voltage that is opposite in polarity to the applied voltage of the sample electrode and that has an absolute value equal to or greater than that.

  The first electrode, the second electrode, and the resistor are annularly arranged around the sample mounting area.

  Each of the first electrode, the second electrode, and the resistor is arranged in parallel with the main surface of the sample placed on the mounting portion.

  According to the sample holder of the present invention, a mounting portion having a region for mounting the sample, a sample electrode for applying a positive or negative voltage to the ground potential to the sample, and an applied voltage of the sample electrode, A positive and negative voltage is applied, a first electrode that is spaced from the sample electrode and disposed around the sample mounting region, and a voltage that is different from the applied voltage of the first electrode is applied, A second electrode disposed around the sample mounting area and spaced apart from the first electrode, disposed between the first electrode and the second electrode, and the first electrode and the second electrode. Since each electrode has a resistor that is electrically conductive, the resistor allows the equipotential line to run in a direction substantially perpendicular to the direction of the sample from the second electrode. The particles to be moved and adsorbed are moved from the second electrode to the sample. Given electrostatic in a direction opposite to the movement direction by equipotential lines formed in, it is possible to reduce the adhesion of particles onto the specimen.

  In addition, by setting the resistance value of the resistor between the first electrode and the second electrode to a predetermined value, the current flowing through the resistor can be reduced, and the influence of the current on the electron beam and ion beam can be reduced. The straightness of the electron beam or ion beam can be ensured.

  Embodiments of a sample holder and an inspection apparatus according to the present invention will be described with reference to the drawings.

  Hereinafter, an embodiment of a sample holder 10 according to the present invention will be described with reference to FIGS.

  FIG. 1A is a perspective view of a sample holder 10 disposed inside the inspection apparatus, and FIG. 1B is a sectional view taken along line AA.

  The sample holder 10 according to the present invention includes a mounting portion 12 having a region for mounting various samples 11 such as semiconductor wafers and masks, and a sample for applying a predetermined voltage to the sample 11 with respect to the ground potential. The first electrode 14 is disposed between the electrode 13, the first electrode 14 and the second electrode 15 disposed around the mounting region of the sample 11, and the first electrode 14 and the second electrode 15. And a resistor 16 that is electrically connected to each of the second electrodes 15.

  Here, the sample 11 is held by a sample holder 10 mounted on a moving means such as an XY stage using an ultrasonic motor or the like as a drive source in a sample chamber in a vacuum environment.

  The sample electrode 13 acts to decelerate immediately before irradiating the electrons constituting the electron beam 20 that irradiates the sample 11. When the sample 11 is a semiconductor wafer, the circuit pattern formed on the sample 11 is prevented from being damaged. To do.

A voltage is applied to the sample electrode 13 so that the sample 11 has a negative voltage in order to decelerate electrons. Moreover, since the voltage depends on the voltage at which electrons are accelerated, it is set to several kV to several tens kV. Further, since it is desirable that the sample 11 has a uniform surface voltage, the sample 11 is manufactured from a conductive material having a low volume resistivity, or a similar material is formed by CVD or the like. For this reason, the sample 11 has a voltage substantially equal to the voltage applied to the sample electrode 13.

  As shown in FIG. 1B, the sample electrode 13 includes an elastic part 41 made of a coil spring or the like, a tip part 42 that applies a voltage in contact with the sample 11, and a force generated by the elastic part 41. The electrode body 43 is transmitted to the portion 42, and the frame 44 is fixed to the base 19 and surrounds and holds the elastic portion 41 and the electrode body 42. The electrode body 43 is sandwiched between the flange 43a and the upper lid 44a of the frame 44. The elastic part 41 receives a force in the direction of pressing the sample 31, and the sample 31 can be pressed by the tip part 42. When a voltage is applied to the electrode body 43, a voltage can be applied to the sample 31 from the tip end portion 42. When removing the sample 31, the electrode body 43 can be lifted upward, and the outer diameter of the column 43b of the electrode body 43 and the inner diameter portion of the upper lid 44a of the frame 44 can be rotated / slid. It has a structure that enables.

  A first electrode 14 is disposed around the mounting region of the sample 11, and a voltage whose polarity is opposite to that of the sample electrode 13 is applied to the first electrode 14. The applied voltage is preferably equal to or greater than the absolute value of the applied voltage of the sample electrode 13.

  A voltage having a value different from the voltage applied to the first electrode 14 is applied to the second electrode 15 disposed around the mounting portion 12 via the first electrode 14 and the resistor 16. Since the resistors 16 are provided between the first electrode 14 and the second electrode 15, respectively, the equipotential lines are substantially perpendicular to the direction from the second electrode 15 to the sample 11 by the resistor 16. You can run in the direction. The particles to be moved and adsorbed to the sample 11 side by the voltage of the sample 11 are given an electrostatic force in the direction opposite to the moving direction by an equipotential line formed in the direction of the sample 11 from the second electrode 15. Particle adhesion on the top can be reduced.

  In particular, the voltage applied to the second electrode 15 is the same as the voltage applied to the first electrode 14, and the absolute value of the voltage applied to the second electrode 15 is smaller than the voltage applied to the first electrode 14. Accordingly, it is possible to reduce the attractive force that the particles charged with a different sign from the voltage of the sample electrode 13 receive from the first electrode 14 and the resistor 16.

  In the case described above, a voltage is applied to the second electrode 15, but it may be grounded so that the voltage of the second electrode 15 is 0V. In this case, it is possible to effectively prevent the particles having the first electrode 14 and the resistor 16 charged oppositely to the positive and negative voltages from being attracted to the first electrode 14 and the resistor 16.

  The first electrode 14 and the second electrode 15 can be made of a material having low magnetism such as aluminum, copper, titanium, and an alloy mainly composed of aluminum, copper, titanium, and the like, thereby reducing the influence of the magnetic field on the electron beam.

  The mounting portion 12, the sample electrode 13, the first electrode 14, and the second electrode 15 are made of copper, silver, gold, or an alloy mainly composed of them having a low volume resistivity, as shown in FIG. Thus, each electrode is disposed on the electrode base 17 made of ceramics such as alumina, cordierite, silicon nitride, silicon carbide, etc. by screw fastening or adhesion, or by a film deposition technique such as chemical vapor deposition (CVD). Is possible.

  The resistor 16 disposed between the first electrode 14 and the second electrode 15 is electrically connected to the first electrode 14 and the second electrode 15 via the wiring 18, and the first electrode 14 to the second electrode 15 are electrically connected. When a voltage as described above is applied to the resistor 16, a potential corresponding to the potential difference between both electrodes can be equally applied to the resistor 16.

  The resistor 16 is formed of a thin film having a thickness of 50 μm or less, thereby suppressing the eddy current generated when the resistor 16 moves in the vicinity of the charged particle and suppressing the electromagnetic force that the eddy current gives to the charged particle. be able to.

  The SEM on which the sample holder 10 is mounted is used in a vacuum chamber. As shown in FIG. 2A, the wall surface of the vacuum chamber exists near the upper surface of the sample holder 10, and this wall surface is an alloy such as iron or aluminum. And is grounded to the ground 21 on the wall surface of the vacuum chamber.

  As a result, the equipotential lines created by the voltage existing in each of the first electrode 14, the second electrode 15, and the resistor 16 and the ground 21 on the chamber wall surface are as shown in FIG. And the voltage generated on the resistor 16 and the voltage generated between the ground 21 on the wall of the vacuum chamber. Here, by setting the distance between the first electrode 14 and the second electrode 15 to be remarkably shorter than the distance between the first electrode 14 and the ground 21, as shown in FIG. It is possible to form an equipotential line in a substantially vertical direction with respect to the movement path to, and to apply a larger electrostatic force in the direction opposite to the direction in which the particle 22 approaches the sample 11.

  The voltage applied to the first electrode 14 and the second electrode 15 and the distance between the electrodes are the voltage applied to the sample 11, and the peripheral electrodes such as the sample 11, the first electrode 14, the second electrode 15 and the vacuum chamber wall surface. It is set as appropriate based on the relative positional relationship.

The resistor 16 has a volume specific resistance value in the range of 1 × 10 ⁶ to 1 × 10 ¹² Ω · cm, and effectively prevents the resistor 16 from being charged when charged particles float on the resistor 16 side. can do. The volume specific resistance value is more preferably 1 × 10 ⁸ Ω · cm or more, and it is formed of various ceramics mainly composed of alumina, aluminum nitride, silicon nitride, silicon carbide, or the like. By using the material having the volume resistivity as described above, the distance between the first electrode 14 and the second electrode 15 can be set to be significantly shorter than the distance between the first electrode 14 and the ground 21 on the chamber wall surface. The surrounding magnetic field fluctuation due to the current flowing through the resistor 16 can be reduced to a level that does not affect the electron beam 20.

  In general, when the electron beam 20 is accelerated at a voltage of +20 kV and applied to the sample 11, the negative voltage applied to the sample 11 by the sample electrode 13 is set to about −20 kV. For example, when the voltage of the sample electrode 13 and the sample 11 is −20 kV, the voltage of the first electrode 14 is set to +20 kV or more, and the second electrode 15 is set to be grounded. Further, a voltage is also generated in the resistor 16, and the negatively charged particles are generated by the second electrode 15 by an equipotential line or electric lines of force generated by the first electrode 14, the second electrode 15, the resistor 16, and the chamber wall surface ground. It receives electrostatic force that is returned to the outside.

  It is preferable that the first electrode 14, the second electrode 15, and the resistor 16 are arranged in a ring around the mounting area of the sample 11. When the sample 11 is in the shape of a disk such as a semiconductor wafer, the second electrode is formed over the entire periphery of the sample 11 by forming an annular shape so as to surround the mounting region of the sample 11, so 15 can be returned to the outside, and further space saving can be achieved.

  Note that the first electrode 14, the second electrode 15, and the resistor 16 do not have to completely surround the sample 11 as long as the adsorption of particles to the sample 11 can be prevented. 15 and the resistor 16 may have a shape that does not partially circulate around the sample 11. For example, a plurality of connected first electrodes 14, second electrodes 15 and resistors 16 may be arranged separately from each other.

  The first electrode 14, the second electrode 15, and the resistor 16 are formed by forming a film on an insulator made of an insulating material using a well-known physical vapor deposition (PVD) method or a CVD method. Also good.

  The mounting unit 12 on which the sample 11 is mounted is used in a vacuum chamber when the sample holder 10 is mounted on the SEM, and when the sample 11 is a semiconductor wafer, the circuit pattern is made finer. Accordingly, the flatness of the sample 11 needs to be forcibly corrected. Therefore, an electrostatic chuck made of a ceramic mainly composed of alumina, aluminum nitride, silicon nitride, and silicon carbide having the same shape as the sample 11 is available. Often used.

  Here, a sample holder using an electrostatic chuck as the mounting portion 12 will be described with reference to FIG. The electrostatic chuck includes an insulator 21 having an electrostatic chuck electrode 23 on the surface below the mounting portion 12, and a lead portion 24 for applying a voltage to each electrode from the back surface of the insulator 21. It is equipped with. When a voltage is applied to the sample 11, an electrostatic force is generated between the sample 11 placed on the placement unit 12 and the placement unit 12, and the sample is adsorbed by electrostatic force. In particular, by dividing the electrostatic chuck electrode 23 into two parts and applying different potentials to both electrodes, the potential appears in the sample 11 without applying a voltage to the sample 11, and the electrostatic force is applied to the mounting portion 12. It is adsorbed by.

  Next, a method for manufacturing the sample holder of the present invention will be described. Here, a sample holder provided with an electrostatic chuck on the mounting portion 12 will be described.

  First, the first electrode 14, the second electrode 15, and the electrostatic chuck electrode 23 are made of a nonmagnetic material such as titanium on a base made of an insulating ceramic such as alumina or aluminum nitride, using a technique such as CVD. It is formed as a film, and electrical continuity with the lead portion 24 is ensured so that different voltages can be applied to each electrode. Thereafter, the mounting portion 12 and the resistor 16 are formed by film formation of alumina, aluminum nitride, silicon nitride, and silicon carbide using a technique such as CVD, so that the wiring 18 of the sample holder 10 is not necessary and can be easily obtained. Can be produced.

  Such a sample holder 10 is installed and used on an XY stage 27 as shown in FIG. 3 in the inspection apparatus.

  The XY stage 25 is installed in the sample chamber of the inspection apparatus, and has an ultrasonic motor 26 as a drive source, and a range of about 200 to 300 mm in the X direction and the Y direction, respectively, along a guide portion 27 made of a cross roller guide or the like. You can move with. By installing the sample holder 10 on the XY stage 25, the position of the sample 11 placed on the sample holder 10 can be adjusted.

  The XY stage 25 on which the sample holder 10 is installed is arranged in the inspection apparatus such as the above-described SEM, irradiates the sample with charged particles such as an electron beam, and secondary electrons and reflections emitted from the sample by the collision of the electrons. The shape of the sample surface and the like can be observed by detecting electrons with a detector. This sample holder 10 reduces the adsorption of particles to the sample 11 during the inspection of the sample 11, reduces the adsorption of particles to the sample 11, and causes fatal damage to the electric circuit such as a short circuit between circuit patterns. It can be effectively prevented.

One Embodiment of the sample holder of this invention is shown, (a) is a perspective view, (b) is the sectional view on the AA line of the same figure (a). (A) is the fragmentary sectional view which typically represented the equipotential line formed with the sample holder of this invention, (b) is the enlarged view of the same figure (a), and represented the movement of the particle schematically Schematic (c) is a cross-sectional view when an electrostatic chuck is arranged on the sample holder of the present invention. It is the perspective view which mounted the sample holder of this invention in the XY stage. It is a disassembled perspective view for demonstrating the inspection method of the sample using an electron beam scanning microscope. The conventional sample holder is shown, (a) is a perspective view, (b) is the BB sectional drawing of the figure (a), (c) is the elements on larger scale which show the electrode for samples. The conventional sample holder is shown, (a) is a perspective view, (b) is CC sectional view taken on the line of the figure (a). A conventional sample holder is shown, (a) is a perspective view, (b) is a sectional view taken along the line DD of FIG. (A), and (c) is a diagram for explaining equipotential lines formed by the sample holder. .

Explanation of symbols

10, 130: Sample holder 11, 131: Sample 12, 132: Placement part 13, 133: Sample electrode 14: First electrode 15: Second electrode 16: Resistor 17: Electrode base 18: Wiring 19, 134: Base 20, 120: Electron beam 21: Ground of wall of chamber 22: Particle 23: Electrode for electrostatic chuck 24: Drawer 25: XY stage 26: Ultrasonic motor 27: Guide part 41, 141: Elastic part 42, 142: Tips 43, 143: Electrode body 44, 144: Frame 51: Electron gun 52: Accelerating electrode 53: Aperture 54: Polarizing electrode 56: Detector 135: Insulator 136: Adsorption electrode 137: Repelling electrode

Claims (8)

A mounting portion having a region for mounting the sample, a sample electrode for applying a positive or negative voltage to the sample with respect to the ground potential, and a voltage that is opposite to the applied voltage of the sample electrode is applied; A voltage different from the applied voltage of the first electrode and the first electrode disposed around the sample mounting area apart from the sample electrode is applied, and separated from the first electrode. And a second electrode disposed around the sample mounting region, disposed between the first electrode and the second electrode, and electrically conducting to the first electrode and the second electrode, respectively. A sample holder comprising a body. 2. The sample holder according to claim 1, wherein the second electrode is applied with a voltage having the same positive and negative voltage as the application voltage of the first electrode and a small absolute value. The sample holder according to claim 1, wherein the second electrode is grounded. 4. The sample holder according to any one of 1 to 3, wherein the first electrode is applied with a voltage whose polarity is opposite to that of the sample electrode and whose absolute value is equal to or greater than that. The sample holder according to any one of claims 1 to 4, wherein the first electrode, the second electrode, and the resistor are annularly arranged around the sample placement region. Each of the first electrode, the second electrode, and the resistor is arranged in parallel with the main surface of the sample placed on the mounting portion. The sample holder described in 1. An inspection apparatus comprising the sample holder according to claim 1, wherein the sample held by the sample holder is inspected using charged particles. A sample processing method comprising the sample holder according to claim 1, wherein a sample held by the sample holder is processed using charged particles.

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