JP2008207458A - Droplet discharge head, droplet discharge device, droplet discharge head manufacturing method, and droplet discharge device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a droplet discharge head etc. which each allow easy and positive wire connection, are high in mounting reliability, low in cost, and high in productivity. <P>SOLUTION: The droplet discharge head comprises at least: a first substrate 1 having one or more discharge rooms 5 formed therein, each of which is at least partially changed in shape by external force to discharge droplets from a nozzle hole 30 communicating therewith; and a second substrate 2 which is anodic-bonded to the first substrate 1, and has one or more individual electrode parts B that apply forces to selected ones or all of the discharge chambers 5 when electric power is fed. The second substrate 2 is provided with a common electrode part A which has a contact point 50 abutting on the first substrate 1 in a manner capable of energizing the same. A terminal part of the common electrode part A is provided in the same plane as that of each individual electrode part B, and by applying a voltage to the terminal parts of the common electrode part A and the individual electrode parts B, the shapes of the discharge chambers 5 are changed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a droplet discharge head, a droplet discharge device, a method for manufacturing a droplet discharge head, and a method for manufacturing a droplet discharge device.

In an electrostatic drive type inkjet head, a cavity substrate (silicon substrate) is used as a common electrode, and an actuator is driven by applying a voltage between an individual electrode portion and a common electrode portion formed in each electrostatic actuator.
Conventionally, after forming each part of the cavity substrate in the common electrode portion, a platinum (Pt) film is formed on the surface of the cavity substrate, and the platinum is used as a terminal portion of the common electrode portion. The individual electrode part is routed laterally from the actuator, its end is used as a terminal part, and the FPC is mounted on the terminal part of the common electrode part and the terminal part of the individual electrode part.

  Some conventional droplet discharge heads have a common electrode portion formed on the cavity substrate in order to make the cavity substrate and the individual electrode portion have the same potential, and are connected to the oscillation circuit via a wire (for example, Patent Document 1).

  In addition, the common electrode connection is formed on the same surface as the terminal part of the individual electrode part through the conductive paste filled in the through hole provided in the cavity substrate in the conventional ink jet head. There is one which is made to conduct to the electrode part for use. Then, the individual electrode part and the terminal part of the common electrode part are drawn out so that they are located on the same plane, and these are superposed on the joint part formed on the wiring board so as to be energized, and the wiring board is externally connected. It is made to join to a flexible wiring board or the like (see, for example, Patent Document 2).

JP 2004-306443 A (page 8, FIG. 2) JP 2001-96741 A (Page 5, FIG. 3)

  The structure of the common electrode portion of the droplet discharge head of Patent Document 1 is the most widely used type, but the common electrode portion and the individual electrode portion are not on the same plane and are common when connecting the wiring flexible substrate. It is necessary to heat and press the electrode part and the individual electrode part separately, and the structure is complicated and the manufacturing is troublesome.

  The inkjet head of Patent Document 2 takes time and effort to fill the conductive paste, and the productivity is low.

  SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and a droplet discharge head and a droplet discharge device that can perform wiring connection easily and reliably, have high mounting reliability, low cost, and high productivity. An object of the present invention is to provide a method for manufacturing a droplet discharge head and a method for manufacturing a droplet discharge device.

The droplet discharge head according to the present invention is
A first substrate (cavity substrate) in which one or a plurality of discharge chambers are formed in which at least a part changes shape by an external force and droplets are discharged from a communicating nozzle;
A second substrate (glass substrate) having one or a plurality of individual electrode portions that are anodically bonded to the first substrate and change the shape by applying force to selected or all of the discharge chambers when power is supplied. 9) a droplet discharge head comprising at least
A common electrode portion provided with a contact that contacts the first substrate so as to be energized is provided on the second substrate, and the terminal portion of the common electrode portion is provided on the same plane as the terminal portion of the individual electrode portion; A voltage is applied to the terminal portions of the common electrode portion and the individual electrode portions to change the shape of the discharge chamber.

  Conventionally, when the common electrode portion is formed on the first substrate, a metal film such as a platinum film must be formed on the common electrode portion using a silicon mask or the like, and the common electrode portion is complicated. In the case where the terminal part is drawn out on the same plane as the individual electrode part through the conductive paste filled, it takes time and the productivity is low, but in the present invention, the second board is connected to the first board so as to be energized. Since a common electrode part with contacts is provided and the terminal part of the common electrode part is provided on the same plane as the terminal part of the individual electrode part, wiring connection can be performed easily and reliably and mounting reliability is improved. In addition, it is cost-effective and productive.

Further, the liquid droplet ejection head according to the present invention is:
The common electrode portion is accommodated in a groove portion that communicates with the groove portion that accommodates the individual electrode portion, and a contact point of the common electrode portion is provided so as to protrude from the surface of the second substrate.
For this reason, wiring connection can be performed easily and reliably, mounting reliability is high, cost is low, and productivity is high.

Further, the liquid droplet ejection head according to the present invention is:
The common electrode portion is arranged over a step portion near the groove portion where the terminal portion of the individual electrode portion is located, and a contact point of the common electrode portion is provided on the substrate surface near the step portion so as to protrude from the substrate surface. It is what was done.
For this reason, wiring connection can be performed easily and reliably, mounting reliability is high, cost is low, and productivity is high.

Further, the liquid droplet ejection head according to the present invention is:
A window is provided in the insulating film formed on the first substrate so as to face the contact of the common electrode provided on the second substrate, and the contact of the common electrode is provided via the window. The first substrate is brought into contact with the first substrate so as to be electrically conductive.
For this reason, wiring connection can be performed easily and reliably, mounting reliability is high, cost is low, and productivity is high.

Further, the liquid droplet ejection head according to the present invention is:
The height of the contact point of the common electrode portion provided on the second substrate is the same as the depth of the window portion formed on the first substrate.
For this reason, electrical connection is reliably performed.

Further, the liquid droplet ejection head according to the present invention is:
A window is provided in the insulating film formed on the first substrate so as to face the contact of the common electrode provided on the second substrate, and oxidation resistance is provided on the first substrate side of the window. A conductive metal film is provided, and the contact of the common electrode portion is brought into contact with the first substrate through the metal film so as to be electrically conductive.
For this reason, contact resistance can be reduced by an oxidation-resistant metal film.

Further, the liquid droplet ejection head according to the present invention is:
The height of the contact of the common electrode portion provided on the second substrate and the oxidation-resistant metal film provided on the first substrate side is the insulation formed on the first substrate. The depth of the window provided in the film is the same.
For this reason, the electrical connection is reliably performed, and the contact resistance can be reduced by the oxidation-resistant metal film.

Further, the liquid droplet ejection head according to the present invention is:
The oxidation-resistant metal film is a metal film formed of platinum.
For this reason, the electrical connection is reliably performed, and the contact resistance can be reduced by the oxidation-resistant platinum metal film.

Further, the liquid droplet ejection head according to the present invention is:
The area of the window provided in the insulating film of the first substrate was made larger than the area of the contact provided in the second substrate.
For this reason, the contact of the common electrode portion reliably contacts with a sufficient margin inside the window portion having a large area.

Further, the liquid droplet ejection head according to the present invention is:
The second substrate is provided with an anodic bonding portion having a contact for connecting the first substrate so as to be energized, and the anodic bonding portion is energized with the first substrate and all the individual electrode portions during anodic bonding. In other words, the contacts of the anodic bonding portion and all the individual electrode portions are disconnected during dicing.
After the anodic bonding, the individual electrode portion and the first substrate do not need to be equipotential, and thus the electrical connection is cut when the droplet discharge head is separated into each head. In this way, it is possible to secure a potential difference between the individual electrode portion and the first substrate and drive the droplet discharge head.

Further, the liquid droplet ejection head according to the present invention is:
The anodic bonding part after being separated from each individual electrode part by dicing is used as a common electrode part.
Since the anodic bonding portion separated from the individual electrode portion by dicing is used as the common electrode portion, the cost can be reduced.

Further, the liquid droplet ejection head according to the present invention is:
A wiring flexible board having wiring joint portions formed on the same plane is attached to the terminal portions of the individual electrode portion and the common electrode portion.
Wiring flexible boards can be connected easily and reliably by simply superimposing and heating and pressing the wiring flexible board on the common electrode part and individual electrode part via a conductive adhesive. Can be improved.

Further, the liquid droplet ejection head according to the present invention is:
The material of the individual electrode part, the common electrode part and the anodic bonding part is made of ITO.
Since ITO used as a transparent electrode is used as a material, it can be easily confirmed whether or not the discharge has occurred after anodic bonding.

In addition, the droplet discharge device according to the present invention includes:
A first substrate on which one or a plurality of discharge chambers are formed in which at least a part is changed in shape by an external force and droplets are discharged from a communicating nozzle;
At least a second substrate having one or a plurality of individual electrode portions that are anodically bonded to the first substrate and apply a force to selected or all of the discharge chambers when the power is supplied. And a common electrode portion provided with a contact for connecting to the first substrate so as to be energized is provided on the second substrate, and the terminal portion of the common electrode portion is flush with the terminal portion of the individual electrode portion. A droplet discharge head configured to change the shape of the discharge chamber by applying a voltage to the terminal portions of the common electrode portion and the individual electrode portion;
Droplet supply means for supplying droplets to the droplet discharge head;
Scanning drive means for moving the droplet discharge head based on a head position control signal;
It comprises at least position control means for changing the relative position between the recording member to be recorded and the droplet discharge head.
A droplet discharge apparatus including a droplet discharge head that can be simply and surely connected to a wiring and has high mounting reliability can be provided at low cost.

A method for manufacturing a droplet discharge head according to the present invention includes:
A method for manufacturing a droplet discharge head, in which a plurality of droplet discharge heads are integrally formed on an overlapped substrate,
A first substrate on which a member for discharging liquid is formed using silicon;
When anodic bonding with the second substrate formed with one or a plurality of individual electrode portions for pressurizing the member to discharge the discharge liquid,
At least a step of connecting the first substrate to a contact point of a common electrode unit that is provided on the same plane as the individual electrode unit and contacts the first substrate is provided.
A liquid droplet ejection head with high reliability, low cost, and high productivity can be provided.

A method for manufacturing a droplet discharge device according to the present invention includes:
A method of manufacturing a droplet discharge device using a method of manufacturing a droplet discharge head in which a plurality of droplet discharge heads are integrally formed on an overlapped substrate,
A first substrate on which a member for discharging liquid is formed using silicon;
When anodic bonding with the second substrate formed with one or a plurality of individual electrode portions for pressurizing the member to discharge the discharge liquid,
At least a step of connecting the first substrate to a contact point of a common electrode unit that is provided on the same plane as the individual electrode unit and contacts the first substrate is provided.
A highly accurate droplet discharge apparatus including a droplet discharge head that is highly reliable, inexpensive, and highly productive can be provided.

Embodiment 1 FIG.
1 is an exploded perspective view of a droplet discharge head according to Embodiment 1 of the present invention, FIG. 2 is a longitudinal sectional view of the assembled droplet discharge head of FIG. 1, and FIG. 3 is a dicing of the glass substrate of FIG. FIG. 4 is a cross-sectional view taken along the line II in FIG. 3. The first embodiment shows a case of a face-type droplet discharge head that discharges droplets from nozzle holes provided in the surface portion of the substrate.
As shown in FIGS. 1 and 2, the droplet discharge head has a cavity substrate 1 as a first substrate having a vibration plate, a glass substrate 2 as a second substrate having an electrode portion, and a nozzle hole. It has a three-layer structure in which a nozzle substrate 3 as a third substrate is laminated.

  The cavity substrate 1 as the first substrate located in the middle is composed of, for example, a silicon (Si) single crystal substrate (hereinafter referred to as a silicon substrate) having a (110) plane orientation of about 50 μm in thickness. The cavity substrate 1 is obtained by subjecting a cavity base material (silicon base material) to anisotropic wet etching, a discharge chamber 5 whose bottom wall is a diaphragm 4 (thickness of about 0.8 μm), and each nozzle hole. A reservoir 6 for storing liquid to be ejected in common is formed. The reservoir 6 is provided with a droplet supply hole 7.

The diaphragm 4 is composed of a high-concentration boron-doped layer having the same thickness. When anisotropic wet etching of the cavity base material is performed with an alkaline aqueous solution, when boron is used as a dopant, the etching rate is extremely small in a high concentration region (about 5 × 10 ¹⁹ atoms · cm ⁻³ or more). The thickness of the vibration plate 4 and the volume of the discharge chamber 5 are accurately formed by using a so-called etching stop technique.

On the lower surface of the cavity substrate 1 (the surface facing the glass substrate 2), a TEOS (Tetraethyl orthosilicate Tetraethoxysilane) film serving as an insulating film 8 is formed by a plasma CVD (Chemical Vapor Deposition) method. The film is formed with a thickness of 0.1 μm. This is to prevent dielectric breakdown or short circuit when the droplet discharge head is driven.
The insulating film 8 of the cavity substrate 1 is provided with an anodic bonding window portion and a common electrode window portion 53 (FIG. 4). The areas of these window portions 53 and the like are opposite to each other. It is formed larger than the area of the equipotential contact 70 of the anodic bonding portion C and the equipotential contact 50 of the common electrode portion A that are in contact with each other. The equipotential contacts 70 and 50 are brought into contact with silicon, which is the main material of the cavity substrate 1, through the window 53 of the cavity substrate 1 and the like, and can be energized during anodic bonding.

  A glass substrate 2 as a second substrate that is anodically bonded to the lower surface of the cavity substrate 1 has a thickness of about 1 mm and is made of borosilicate heat-resistant hard glass. The glass substrate 2 is provided with individual electrode recesses (grooves) 20 having a depth of about 0.2 μm by etching in accordance with the respective discharge chambers 5 formed in the cavity substrate 1. Since the individual electrode 21, the lead part 22 and the terminal part 23 (hereinafter collectively referred to as the individual electrode part B) are provided therein, the pattern shape of the individual electrode recess 20 is more than the shape of the individual electrode part B. Is made slightly larger. These individual electrode recesses 20 form a common terminal recess 24 on the terminal part 23 side of the individual electrode B.

  As a material of the individual electrode portion B provided in the individual electrode recess 20, transparent ITO (Indium Tin Oxide) doped with tin oxide as an impurity is used, and for example, a sputtering method is used with a thickness of 0.1 μm. To form a film. Here, the material of the individual electrode portion B is not limited to ITO, and a metal such as chromium may be used as the material. However, in the first embodiment, since the material is transparent as described later, it is discharged. ITO is used because it is easy to check whether or not.

  In addition to the individual electrode recess 20, the glass substrate 2 is provided with an anodic bonding recess 25 and a common electrode recess 26, and each of the recesses 25 and 26 is provided with an anodic bonding portion C and a common electrode portion A. The equipotential contact 70 of the part C is drawn to the terminal recess 24 side by the contact wiring 71 and the equipotential contact 50 of the common electrode part A is drawn by the contact wiring 51, respectively.

  The anodic bonding portion C is made of conductive ITO, and the equipotential contact 70 of the anodic bonding portion C is formed to a thickness of about 0.1 μm so as to run over the step portion at the tip of the anodic bonding recess 25. . Therefore, the equipotential contact 70 of the anodic bonding portion C protrudes from the surface of the glass substrate 2 by about 0.1 μm. As the material of the anode junction C, transparent ITO doped with tin oxide as an impurity is used, and a film is formed by sputtering. Here, the material of the anodic bonding portion C is not limited to ITO, and a metal such as chromium may be used as the material.

  The equipotential contact 70 of the anodic bonding portion C is an equipotential contact for making the individual electrode portion B equipotential with the cavity base material during anodic bonding, and before separation by dicing of a plurality of droplet discharge heads integrally formed on the wafer. Are electrically connected to each individual electrode part B and the terminal recess 24 side, and when the cavity base material and the glass substrate 2 are anodically bonded, the boron doped layer (silicon) of the cavity base material is opened through the window part of the cavity base material. The cavity base material and the individual electrode part B are made equipotential. This is for preventing discharge from occurring between the cavity base material and the individual electrode portion B of the glass substrate 2 when the cavity base material and the glass substrate 2 are anodically bonded. When the plurality of droplet discharge heads are diced into chips, the individual electrode portions B are separated for each actuator. Therefore, when a chip is formed by dicing, the portion on the right side of the dicing line 27 shown in FIG. 3 does not remain in the completed droplet discharge head.

  The equipotential contact 50 of the common electrode portion A is drawn out to the terminal recess 24 side by a bent contact wire 51. When dicing a plurality of droplet discharge heads into a chip, the contact wire of the common electrode portion A is drawn. 51 is also cut off by the dicing line 27 on the end side, and the terminal part of the contact wiring 51 of the common electrode part A is taken out on the terminal recessed part 24 side. Thus, the terminal part of the common electrode part A is positioned on the same plane as the terminal part 23 of the individual electrode part A. The equipotential contact 50 of the common electrode portion A is provided independently for each head chip, and is connected to the cavity substrate so as to be energized at the time of anodic bonding.

  In addition, about the part which forms the equipotential contact 50 of the common electrode part A at the time of forming ITO film, when forming the common electrode recessed part 26 of the glass substrate 2, the part is left as the post 52 without etching. deep. Then, a conductive ITO film is formed to a thickness of about 0.1 μm from the end of the common electrode recess 26 to the post 52. Therefore, the equipotential contact 50 of the common electrode portion A protrudes from the surface of the glass substrate 2 by about 0.1 μm.

  As a material for the common electrode portion A, transparent ITO doped with tin oxide as an impurity is used, and a film is formed by sputtering. Here, the material of the common electrode portion A is not limited to ITO, and a metal such as chromium may be used as the material.

  Thus, inside the window portion 53, the boron doped layer of the cavity substrate 1 and the equipotential contact 50 of the common electrode portion A provided on the glass substrate 2 are in direct contact with each other. In this case, the thickness of the insulating film 8 is equal to the thickness of the common electrode portion A. For example, the insulating film 8 has a thickness of 0.1 μm, and the common electrode portion A has a thickness of 0.1 μm. Thus, the common electrode portion A of the glass substrate 2 and the cavity substrate 1 can be energized. For this reason, unlike the conventional case, it is not necessary to form a metal film such as a platinum film on the common electrode portion using a silicon mask or the like as in the case where the common electrode portion A is formed on the cavity base material. Is possible.

  The equipotential contact 50 of the boron doped layer of the cavity substrate 1 and the common electrode portion A of the glass substrate 2 is not directly in contact with the inner side of the window 53 formed in the insulating film 8 of the cavity substrate 1. In order to reduce the resistance, a metal film such as a platinum film which is difficult to oxidize may be formed. That is, as shown in FIG. 5, a metal film 50a that is difficult to oxidize such as a platinum film is formed on the boron doped layer side where the equipotential contact 50 of the common electrode portion A contacts, and the equipotential contact 50 of the common electrode portion A is formed. May contact the boron doped layer through the metal film 50a. In this case, the sum of the thickness of the metal film 50 a and the thickness of the equipotential contact 50 is equal to the thickness of the insulating film 8. For example, the platinum film used for the metal film 50a has a thickness of 0.03 μm, the equipotential contact 50 has a thickness of 0.07 μm, and the insulating film 8 has a thickness of 0.1 μm. With this structure, the contact resistance between the equipotential contact 50 of the common electrode part A and the cavity substrate 1 can be reduced.

  The nozzle substrate 3 as a third substrate bonded and bonded to the upper surface of the cavity substrate is, for example, a silicon substrate having a thickness of about 180 μm. The cavity substrate 1 is bonded to the surface opposite to the glass substrate 3. A nozzle hole 30 communicating with the discharge chamber 5 is formed on the upper surface of the nozzle substrate 3, and an orifice 31 is provided on the lower surface to connect the discharge chamber 5 and the reservoir 6.

  In the above droplet discharge head, the actuator is sealed for each individual electrode 21 by the sealing material 40. This prevents sticking between the individual electrode 21 and the diaphragm 5 when the actuator is driven. In the actuator described above, the gap G formed between the diaphragm 4 and the individual electrode 21 is determined by the depth of the individual electrode recess 20 and the thickness of the individual electrode 21 and greatly affects the ejection characteristics.

  An FPC 42 is mounted on the electrode outlet 41 where the terminal part 23 of the individual electrode part B and the terminal part of the common electrode part A are located. In this case, the wiring flexible board in which the wiring joint portion is formed on the same plane is simply overlapped with the terminal portion 23 of the individual electrode portion B and the terminal portion of the common electrode portion A through a conductive adhesive. Wiring connection can be performed easily and reliably simply by heating and pressing. In this way, the terminal part 23 of the individual electrode part B and the terminal part of the common electrode part A are connected to the FPC 42 on which the driver IC 43 is mounted, and the supply and stop of the charge to the individual electrode 21 are controlled.

The operation of the droplet discharge head configured as described above will be described.
As shown in FIG. 2, the discharge liquid discharged from the nozzle hole 30 is stored in the discharge chamber 5. Then, the diaphragm 4 which is the bottom wall of the discharge chamber 5 is bent, the pressure in the discharge chamber 5 is increased, and droplets are discharged from the nozzle holes 30.
At this time, the supply and stop of the charge to the individual electrode 21 are performed by the FPC 42 mounted with the driver IC 43 located at the electrode outlet 41 and connected to the terminal portion 23 of the individual electrode portion B and the terminal portion of the common electrode portion A. Control. For example, it oscillates at 24 kHz, and charges are supplied by applying pulse potentials of 0 V and 30 V to the individual electrodes 21.

When an electric charge is supplied to the individual electrode 21 to be positively charged, the diaphragm 4 is negatively charged and is attracted to the individual electrode 21 by an electrostatic force and bends. Thereby, the volume of the discharge chamber 5 is expanded. When the supply of electric charges to the individual electrode 21 is stopped, the diaphragm 4 returns to its original state, but the volume of the discharge chamber 5 at that time also returns to its original state. In the case of ink, recording is performed by landing on a recording sheet to be recorded.
Such a method is called pulling, but there is also a method called pushing that discharges droplets using a spring or the like.

A manufacturing method of the glass substrate 2 of the droplet discharge head configured as described above will be described with reference to manufacturing process diagrams of FIGS. In addition, the numerical value described in the following description shows the example, and is not limited to this.
(A) About 1 mm glass substrate 200 polished on both sides is prepared, and a chromium (Cr) film 201 as an etching mask is formed on one side of the glass substrate 200 to a thickness of 0.1 μm (FIG. 6A). .

(B) A resist 202 is applied to the surface of the formed chromium film 201, and resist patterning for forming the individual electrode recess 20, the anode bonding recess 25, and the common electrode recess 26 is performed (FIG. 6B).

(C) The chromium film 201 is patterned by etching with a cerium ammonium nitrate aqueous solution (FIG. 6C).

(D) The glass substrate 200 is immersed in an aqueous ammonium fluoride solution with the resist 202 attached, and the individual electrode recess 20, the anode bonding recess 25 and the common electrode recess 26 are etched by 0.2 μm. At this time, the portion which becomes the height portion of the equipotential contact 50 of the common electrode portion A provided in the common electrode recess 26 is left as a post 52 without being etched (FIG. 6D).

(E) After peeling off the resist 202, the chromium film 201 is peeled off using a cerium ammonium nitrate aqueous solution (FIG. 7 (e)).

(F) After forming the individual electrode recess 20, the anode bonding recess 25, and the common electrode recess 26, an ITO film 203 as an electrode member having a thickness of 0.1 μm is formed on the entire patterning surface by using, for example, a sputtering method. (FIG. 7 (f)).

(G) Resist patterning on the resist 204 so that the ITO film 203 remains in the individual electrode portion B in the individual electrode recess 20, the anode junction C in the anode junction recess 25, and the common electrode portion A in the common electrode recess 26. (FIG. 7G).

(H) The ITO film 203 is etched using a mixed solution of nitric acid and hydrochloric acid to form the individual electrode portion B, the anode junction portion C, and the common electrode portion A. In this case, the equipotential contact 50 of the common electrode portion A and the equipotential contact 70 of the anodic bonding portion C each protrude from the surface of the glass substrate 200 on the upper surface of the post forming the height portion (FIG. 8 ( h)).

(I) The resist 204 is removed (FIG. 8 (i)).

(J) The droplet supply holes 7 are formed in the glass substrate 200 by sandblasting or cutting.
In this way, the glass substrate 2 is manufactured (FIG. 8 (j)).

Next, a method of manufacturing a droplet discharge head using the glass substrate 2 manufactured by the steps shown in FIGS. 6 to 8 will be described with reference to manufacturing process diagrams of FIGS.
Actually, a plurality of droplet discharge head members are simultaneously formed from a silicon base material, but only a part thereof is shown in the following description.
(A) The glass substrate 2 is manufactured from the glass substrate 200 by the manufacturing steps shown in FIGS. 6 to 8 (FIG. 9A).

(B) One side of a silicon substrate with a low oxygen concentration having a plane orientation of (110) is mirror-polished to produce a silicon substrate having a thickness of 220 μm (hereinafter referred to as cavity substrate 100).
Next, the cavity base material 100 is oxidized in an oxygen and water vapor atmosphere at 1075 ° C. for 4 hours to form about 1.2 μm SiO ₂ films 101 on both surfaces of the cavity base material 100 (FIG. 9 ( b)).

(C) A resist (not shown) is applied to both surfaces of the cavity substrate 100, the resist patterning of the selective diffusion portion 102 is performed, and etching is performed with a hydrofluoric acid aqueous solution, thereby patterning the SiO ₂ film 101. Then, the resist is peeled off (FIG. 9C).

(D) The surface of the cavity substrate 100 on which the boron doped layer is to be formed is set on a quartz boat so as to face a solid diffusion source mainly composed of B ₂ O ₃ . A quartz boat is set in a vertical furnace, the inside of the furnace is put into a nitrogen atmosphere, the temperature is raised to 1100 ° C., the temperature is kept as it is for 6 hours, boron is diffused into the cavity base material 100, and boron is doped into the selective diffusion portion 102 Layer 103 is formed. In the boron dope process, the input temperature of the cavity base material 100 is set to 800 ° C., and the extraction temperature of the cavity base material 100 is also set to 800 ° C. Accordingly, it is possible to quickly pass through a region (600 ° C. to 800 ° C.) where the growth rate of oxygen defects is high, so that the generation of oxygen defects can be suppressed.
At this time, since the SiO ₂ film 101 remains on the portion other than the selective diffusion portion 102 and the surface opposite to the selective diffusion portion 102, boron may be diffused using the SiO ₂ film 101 as a mask. No (FIG. 9D).

(E) A boron compound (SiB ₆ ) is formed on the surface of the boron-doped layer 103 (not shown), but it is oxidized in an oxygen and water vapor atmosphere at 600 ° C. for 1 hour and 30 minutes, and a hydrofluoric acid aqueous solution is used. Chemical change to B ₂ O ₃ + SiO ₂ which can be etched.
When a resist is applied to the surface opposite to the selectively diffused surface and the cavity base material 100 is immersed in a hydrofluoric acid aqueous solution for 10 minutes, the B ₂ O ₃ + SiO ₂ film of the selective diffusion portion 102 and the SiO ₂ film on the diffusion surface side Are removed by etching. Then, the resist is peeled off (FIG. 10E).

(F) Similarly to the step (d), the surface of the cavity base material 100 on which the boron doped layer 103 is formed is set on a quartz boat so as to face a solid diffusion source containing B ₂ O ₃ as a main component. A quartz boat is set in a vertical furnace, the inside of the furnace is put into a nitrogen atmosphere, the temperature is raised to 1050 ° C., the temperature is kept for 7 hours, boron is diffused into the cavity base material 100, and boron is doped on the entire diffusion surface side. Layer 103 is formed. In the boron dope process, the input temperature of the cavity base material 100 is set to 800 ° C., and the extraction temperature of the cavity base material 100 is also set to 800 ° C. Accordingly, it is possible to quickly pass through a region (600 ° C. to 800 ° C.) where the growth rate of oxygen defects is high, so that the generation of oxygen defects can be suppressed. At this time, since the SiO ₂ film 101 remains on the surface opposite to the diffusion surface, even if boron wraps around the opposite surface, the SiO ₂ film 101 does not diffuse into the opposite surface using the mask.
The boron concentration in the portion selectively diffused first becomes thicker than the other portions, and boron is diffused further into the cavity base material 100 (FIG. 10 (f)).

(G) As in the step (e), a boron compound (SiB ₆ ) is formed on the surface of the boron doped layer 103 (not shown), but in an oxygen and water vapor atmosphere at 600 ° C. for 1 hour 30 minutes. Oxidized and chemically changed to B ₂ O ₃ + SiO ₂ which can be etched with a hydrofluoric acid aqueous solution. Then, the cavity base material 100 is immersed in an aqueous hydrofluoric acid solution for 10 minutes, and the B ₂ O ₃ + SiO ₂ film on the diffusion surface and the SiO ₂ film 101 on the opposite surface are removed by etching (FIG. 10 (g)).

(H) A TEOS insulating film 104 is formed on the surface on which the boron doped layer 103 is formed by plasma CVD. The processing temperature during film formation was 360 ° C., the high frequency output was 250 W, the pressure was 66.7 Pa (0.5 Torr), the gas flow rate was TEOS flow rate 100 cm ³ / min (100 sccm), and the oxygen flow rate was 1000 cm ³ / min (1000 sccm). Under this condition, the TEOS insulating film 104 is formed to a thickness of 0.1 μm (FIG. 10H).

(I) A resist is applied to the diffusion surface side of the cavity substrate 100, and the resist is applied to the window portion corresponding to the equipotential contact 70 of the anodic bonding portion C and the window portion 53 corresponding to the equipotential contact 50 of the common electrode portion A. The TEOS insulating film 104 is patterned by performing patterning and etching with a hydrofluoric acid aqueous solution, and a window portion corresponding to the equipotential contact 70 of the anode junction C and a window portion corresponding to the equipotential contact 50 of the common electrode portion A 53 is formed. Then, the resist is peeled off.
In the case where a metal film 50a such as a platinum (Pt) film is provided at the contact portion of the common electrode portion A with the equipotential contact 50 (see FIG. 5), the metal film 50a is 0.03 μm over the entire surface after the above process. A film is formed by sputtering and patterned by photolithography so that the metal film 50a remains (FIG. 11 (i)).

(J) After the cavity base material 100 and the glass substrate 2 are heated to 360 ° C., a negative electrode is connected to the glass substrate 2 and a positive electrode is connected to the cavity base material 100, and a voltage of 800 V is applied to perform anodic bonding. At the time of anodic bonding, the individual electrode part B and the cavity base material 100 are electrically connected to the boron doped layer 103 through the window provided in the cavity base material 100 so that the equipotential contact 70 of the anodic joint part C is electrically connected. Will never happen. Further, at the same time as the anodic bonding, the common electrode portion A and the cavity base material 100 can also be energized with the boron doped layer 103 through the window 53 of the cavity base material 100 at the equipotential contact 50 of the common electrode portion A. (FIG. 11 (j)).

  (K) After the anodic bonding, the cavity base material 100 is ground to a thickness of about 60 μm. Thereafter, the cavity base material 100 is etched by about 10 μm with a potassium hydroxide solution having a concentration of 32 w% to remove the work-affected layer. Thereby, the thickness of the cavity base material 100 becomes about 50 μm (FIG. 11 (k)).

(L) A TEOS etching mask 105 is formed on the etching surface using plasma CVD. The processing temperature during film formation was 360 ° C., the high frequency output was 700 W, the pressure was 33.3 Pa (0.25 Torr), the gas flow rate was TEOS flow rate 100 cm ³ / min (100 sccm), and the oxygen flow rate was 1000 cm ³ / min (1000 sccm). Under these conditions, a TEOS etching mask 105 is formed to a thickness of 1.0 μm (FIG. 11L).

(M) Resist patterning is performed on the TEOS etching mask 105, and etching is performed with an aqueous hydrofluoric acid solution, thereby patterning the portion 5a serving as a discharge chamber and the portion 44a serving as a through hole. Then, the resist is peeled off (FIG. 12 (m)).

(N) The TEOS etching mask 105 is subjected to resist patterning, and is etched by 0.7 μm with a hydrofluoric acid aqueous solution to pattern the portion 6a serving as a reservoir. The remainder of the TEOS etching mask 105 in the portion 6a serving as a reservoir is 0.3 μm. This is because the reservoir 6 is finally thickened and the rigidity of the reservoir 6 is increased. Then, the resist is removed (FIG. 12 (n)).

(O) The bonded substrate is immersed in a 35 wt% potassium hydroxide aqueous solution until the thickness of the portion 5a serving as the discharge chamber and the portion 44a serving as the through hole reaches about 10 μm. At this time, the etching of the portion 6a serving as the reservoir has not yet started. However, the portion corresponding to the droplet supply hole 7 provided in the glass substrate 2 has a high concentration of the aqueous potassium hydroxide solution, so that the etching rate in the boron doped layer 103 decreases, but the etching proceeds from the bonding surface side. (FIG. 12 (o)).

(P) The bonded substrate is immersed in a hydrofluoric acid aqueous solution, and the TEOS etching mask 105 of the portion 6a to be the reservoir is removed (FIG. 12 (p)).

(Q) The bonded substrate is immersed in an aqueous potassium hydroxide solution having a concentration of 3 wt%, and etching is continued until an etching stop due to a decrease in the etching rate in the boron doped layer 103 is sufficiently effective. By performing etching using the two types of aqueous potassium hydroxide solutions having different concentrations, the surface roughness of the portion that becomes the diaphragm 4 (the boron doped layer 103 of the portion that becomes the diaphragm) is suppressed, and the thickness accuracy is 0.80. The ejection performance of the droplet ejection head can be stabilized.
Since the portion 44a (the portion that becomes the electrode extraction port 41 after the penetration) that is selectively diffused is formed with the deep boron doped layer 103 at a high concentration, the boron doped layer in the portion where the etching stop becomes the vibration plate 4 The effect begins faster than 103, and the thickness of the portion 44a serving as a through hole is about 3 μm. Therefore, the strength is improved, and the portion 44a that becomes a through hole having a large area during silicon etching is not broken, and the yield can be improved (FIG. 13 (q)).

(R) When the etching of the cavity base material 100 is completed, the bonded substrate is immersed in a hydrofluoric acid aqueous solution, and the TEOS etching mask 105 on the surface of the cavity base material 100 is peeled off. Then, a TEOS droplet protective film 106 is formed on the etched surface by plasma CVD. The processing temperature during film formation was 360 ° C., the high frequency output was 250 W, the pressure was 66.7 Pa (0.5 Torr), the gas flow rate was TEOS flow rate 100 cm ³ / min (100 sccm), and the oxygen flow rate was 1000 cm ³ / min (1000 sccm). Under these conditions, a film having a thickness of 0.1 μm is formed (FIG. 13 (r)).

(S) In order to remove the silicon thin film and the TEOS droplet protective film remaining in the through hole 44a and the first sealing portion 28 (see FIG. 3), a silicon mask is formed on the surface of the cavity base 100. Mounting, RF power 200 W, pressure 40 Pa (0.3 Torr), CF ₄ flow rate 30 cm ³ / min (30 sccm), RIE dry etching is performed for 1 hour, and plasma is applied only to the portion 44 a to be a through hole to penetrate. The through hole 44 is formed. At this time, the gap G is opened to the atmosphere (FIG. 13 (s)).

(T) An epoxy resin is placed on the first sealing portion 28 to form the first sealing material 40, and sealing is performed for each individual electrode 21. Instead of the epoxy resin, an inorganic material such as a TEOS film may be formed and sealed. At this point, the gap G is not sealed. Then, moisture in the gap G is removed through the second sealing portion 29. Thereafter, in order to perform a hydrophobic treatment, the bonded substrate is filled with HMDS (Hexa Methyl Disilazane) gas in the gap, and the second sealing portion 29 is filled with an epoxy resin, and the second sealing material 46, and the gap G is sealed. As a result, the gap G is again sealed (FIG. 13 (t)).

(U) The nozzle substrate 300 is bonded to the cavity substrate 100 with an epoxy adhesive (FIG. 14 (u)).

(V) Dicing is performed along the dicing line 27 (see FIG. 3) and cut into individual heads. The individual electrode part B is separated from the anodic bonding part C by dicing and is independent (FIG. 14 (v)).

When the common electrode part is formed on the cavity base material as in the past, a metal film such as a platinum film must be formed on the common electrode part using a silicon mask or the like, and the common electrode part is complicated. When drawing out on the same plane as the individual electrode part of a glass substrate through the electrically conductive paste with which the terminal part of the part was filled, it takes time and productivity is also low.
According to this Embodiment 1, the common electrode part A provided with the equipotential contact 50 connected to the cavity board | substrate 1 so that electricity supply is possible is provided in the glass substrate 2, and the terminal part 51 of this common electrode part A is made into an individual electrode part. Since the equipotential contact 50 of the common electrode portion A is joined to the cavity base material at the time of anodic bonding, the platinum film or the like using a silicon mask or the like is provided. There is no need to bother forming a metal film on the common electrode portion, and the cost can be reduced. In addition, wiring flexible boards with wiring joints formed on the same plane can be simply and reliably connected by simply superposing and heating and pressing each terminal part via a conductive adhesive. This improves mounting reliability and increases productivity.

Embodiment 2. FIG.
15 is a perspective view of a glass substrate of a droplet discharge head according to Embodiment 2 of the present invention, FIG. 16 is a schematic explanatory view of the glass substrate of FIG. 15 as viewed from above before dicing, and FIG. FIG.
In the first embodiment, the equipotential contact 50 of the common electrode portion A is provided in the common electrode recess 26 different from the terminal recess 24 in which the individual electrode portion B is housed. A is provided so as to straddle the step portion in the width direction of the terminal recess 24 where the terminal portion 23 of the individual electrode portion B is located, and the common electrode portion is formed on the surface of the glass substrate 2 near the step portion, ie, at a high position A equipotential contact 50 of A is located. That is, an ITO film is formed to a thickness of 0.1 μm from the bottom surface of the terminal recess 24 through the step portion to the surface of the glass substrate 2 near the step portion. Therefore, the equipotential contact 50 of the common electrode portion A protrudes by 0.1 μm from the surface of the glass substrate 2.

On the cavity substrate 1 side, a part of the insulating film 8 (0.1 μm) facing the equipotential contact 50 of the common electrode portion A is partially removed to form a window portion 53, and the common electrode portion A of the glass substrate 2 is formed. By bringing the equipotential contact 50 into contact with the boron doped layer of the cavity substrate 1, the equipotential with the common electrode portion A is ensured.
Other configurations, operations, and effects are substantially the same as in the case of the first embodiment, and a description thereof will be omitted.

Embodiment 3 FIG.
18 is a perspective view of a glass substrate of a droplet discharge head according to Embodiment 3 of the present invention, and FIG. 19 is a schematic explanatory view of the glass substrate of FIG. 18 as viewed from above before dicing.
In the first embodiment, the equipotential contact 50 of the common electrode portion A is provided in the common electrode concave portion 26 different from the terminal concave portion 24 in which the individual electrode portion B is accommodated. The anodic bonding part C after being separated from the electrode part B is used as the common electrode part A as it is.

That is, the equipotential contact 50 of the common electrode portion A uses the equipotential contact 70 of the anodic bonding portion C after dicing as it is, and the contact wiring 51 of the common electrode portion A serves as the contact of the anodic bonding portion C after dicing. The wiring 71 is used as it is, and the common electrode portion A (that is, the anodic bonding portion C) is electrically connected to all the individual electrodes 21 of the individual electrode portion B before dicing. This is to prevent discharge from occurring between the cavity base material 100 and the individual electrode part B during anodic bonding before dicing. Then, when dicing into chips, the individual electrodes 21 of the individual electrode portion B are divided for each actuator. Then, the equipotential contact 70 of the anodic bonding portion C after the division is used as the equipotential contact 50 of the common electrode portion A.
Other configurations, operations, and effects are substantially the same as in the case of the first embodiment, and a description thereof will be omitted.

Embodiment 4 FIG.
FIG. 20 is a perspective view showing a droplet discharge apparatus equipped with the droplet discharge head according to any one of Embodiments 1 to 3 of the present invention. A droplet discharge device 400 shown in FIG. 20 is a general inkjet printer.
The droplet discharge heads shown in the first to third embodiments have a structure in which the terminal part 23 of the individual electrode part B and the terminal part of the common electrode part A are formed on the same plane. Since the wiring connection can be easily and reliably performed simply by superimposing the electrode terminal and heating and pressurizing, the droplet discharge apparatus provided with such a droplet discharge head is highly accurate and reliable. It is expensive and can be manufactured at low cost.
In addition to the ink jet printer shown in FIG. 20, the droplet discharge heads shown in the first to third embodiments can be used for variously changing the droplets to produce a color filter for a liquid crystal display and a light emitting portion of an organic EL display device. The present invention can also be applied to the formation of liquid and the discharge of biological liquid.

Embodiment 5. FIG.
FIG. 21 is a perspective view of a main part of a device including the electrostatic actuator according to any one of Embodiments 1 to 3 of the present invention. A device 500 shown in FIG. 21 is a mirror device used as a laser scan mirror for an optical switch or a laser printer.
In the device 500 according to the fifth embodiment, a drive unit 502, a hinge 503, and a mirror 504 are formed on a drive substrate 501. A counter electrode 506 made of ITO or the like is formed on the electrode substrate 505 bonded to the drive substrate 501. The drive substrate 501 corresponds to the cavity substrate 1 of the droplet discharge head according to Embodiment 1, and the drive unit corresponds to the diaphragm 4.

In the device 500 shown in FIG. 21, when a voltage is applied between the driving unit 502 and the counter electrode 506, the driving unit 502 swings. As a result, the hinge 503 is twisted and the force is transmitted to the mirror 504, whereby the mirror 504 changes the angle. As described above, in the fifth embodiment, the electrostatic actuator is mainly configured by the drive unit 502, the hinge 503, the mirror 504, and the counter electrode 506.
Also in the device 500 according to the fifth embodiment, a passivation film (not shown) is formed on the electrode substrate 505, and a counter electrode 506 is formed thereon, thereby blocking water vapor and the like and driving unit 502. In addition, the driving stability of the mirror 504 can be improved. Note that the device 500 shown in FIG. 21 is generally vacuum-sealed by packaging (not shown) to be shut off from the outside air.

  In the first to third embodiments, a droplet discharge head is shown as an example to which the manufacturing method of the electrostatic actuator according to the present invention is applied. However, the manufacturing method of the electrostatic actuator according to the first to third embodiments is other The present invention can also be applied to the device manufacturing method. Specifically, it can be applied to a manufacturing method of MEMS devices such as a wavelength tunable filter and a micropump.

1 is an exploded perspective view of a droplet discharge head according to Embodiment 1 of the present invention. FIG. 2 is a longitudinal sectional view of a state in which the droplet discharge head of FIG. 1 is assembled. The schematic explanatory drawing seen from the upper surface before dicing the glass substrate of FIG. II sectional drawing of FIG. The II sectional drawing which shows the other form of FIG. FIG. 4 is a cross-sectional view showing a manufacturing process of the glass substrate of the droplet discharge head according to Embodiment 1. Sectional drawing which shows the manufacturing process of the glass substrate of the droplet discharge head following FIG. Sectional drawing which shows the manufacturing process of the glass substrate of the droplet discharge head following FIG. FIG. 3 is a cross-sectional view showing a manufacturing process of the droplet discharge head according to the first embodiment. Sectional drawing which shows the manufacturing process of the droplet discharge head following FIG. FIG. 11 is a cross-sectional view illustrating a manufacturing process of the droplet discharge head following FIG. 10. FIG. 12 is a cross-sectional view showing a manufacturing process of the droplet discharge head following FIG. 11. FIG. 13 is a cross-sectional view illustrating a manufacturing process of the droplet discharge head following FIG. 12. FIG. 14 is a cross-sectional view illustrating a manufacturing process of the droplet discharge head following FIG. 13. The perspective view of the glass substrate of the droplet discharge head which concerns on Embodiment 2 of this invention. The schematic explanatory drawing seen from the upper surface before dicing the glass substrate of FIG. FIG. 17 is a cross sectional view of FIG. The perspective view of the glass substrate of the droplet discharge head which concerns on Embodiment 3 of this invention. The schematic explanatory drawing seen from the upper surface before dicing the glass substrate of FIG. The perspective view of the droplet discharge device which concerns on Embodiment 4 of this invention. The principal part perspective view of the device which concerns on Embodiment 5 of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Cavity board | substrate (1st board | substrate) 2 Glass board | substrate (2nd board | substrate) 3 Nozzle board | substrate 4 Vibrating plate 5 Discharge chamber 6 Reservoir 8 Insulating film 20 Individual electrode recessed part (groove part) 21 Individual electrode , 22 Lead part, 23 terminal part, 24 terminal concave part, 25 anode junction concave part, 26 common electrode concave part (groove part), 27 dicing line, 30 nozzle hole, 31 orifice, 42 FPC, 50 equipotential contact (contact point) 50a oxidation resistant metal film, 51 common electrode contact wiring, 53 cavity substrate window, 70 anodic junction equipotential contact, 71 anodic contact wiring, 100 glass substrate, 103 boron doped layer , 200 cavity base material, 203 ITO film, A common electrode part, B individual electrode part, C anodic bonding part.

Claims (16)

A first substrate on which one or a plurality of discharge chambers are formed in which at least a part is changed in shape by an external force and droplets are discharged from a communicating nozzle;
At least a second substrate having one or a plurality of individual electrode portions that are anodically bonded to the first substrate and apply a force to selected or all of the discharge chambers when the power is supplied. A liquid droplet ejection head comprising:
A common electrode portion provided with a contact that contacts the first substrate so as to be energized is provided on the second substrate, and the terminal portion of the common electrode portion is provided on the same plane as the terminal portion of the individual electrode portion; A droplet discharge head, wherein a voltage is applied to the terminal portions of the common electrode portion and the individual electrode portion to change the shape of the discharge chamber.   2. The common electrode portion is accommodated in a groove portion that communicates with a groove portion that accommodates the individual electrode portion, and a contact point of the common electrode portion is provided so as to protrude from a surface of the second substrate. The droplet discharge head described.   The common electrode portion is arranged over a step portion near the groove portion where the terminal portion of the individual electrode portion is located, and a contact point of the common electrode portion is provided on the substrate surface near the step portion so as to protrude from the substrate surface. The droplet discharge head according to claim 1, wherein the droplet discharge head is formed.   A window is provided in the insulating film formed on the first substrate so as to face the contact of the common electrode provided on the second substrate, and the contact of the common electrode is provided via the window. The droplet discharge head according to claim 1, wherein the droplet discharge head is brought into contact with the first substrate so as to be electrically conductive.   5. The droplet according to claim 4, wherein the height of the contact point of the common electrode portion provided on the second substrate is the same as the depth of the window portion formed on the first substrate. Discharge head.   A window is provided in the insulating film formed on the first substrate so as to face the contact of the common electrode provided on the second substrate, and oxidation resistance is provided on the first substrate side of the window. 4. The liquid according to claim 1, wherein a conductive metal film is provided, and the contact of the common electrode portion is brought into contact with the first substrate through the metal film so as to be electrically conductive. Drop ejection head.   The height of the contact of the common electrode portion provided on the second substrate and the oxidation-resistant metal film provided on the first substrate side is the insulation formed on the first substrate. 7. The droplet discharge head according to claim 6, wherein the depth is the same as the depth of the window provided in the film.   8. The droplet discharge head according to claim 6, wherein the oxidation-resistant metal film is a metal film formed of platinum.   9. The liquid according to claim 4, wherein an area of the window provided in the insulating film of the first substrate is made larger than an area of the contact provided in the second substrate. Drop ejection head.   The second substrate is provided with an anodic bonding portion having a contact for connecting the first substrate so as to be energized, and the anodic bonding portion is energized with the first substrate and all the individual electrode portions during anodic bonding. The droplet discharge head according to claim 1, wherein the droplet discharge head is connected so as to be able to be disconnected from all the individual electrode portions at the time of dicing.   11. The liquid droplet ejection head according to claim 10, wherein an anode junction portion separated from each individual electrode portion by dicing is used as a common electrode portion.   12. The liquid droplet according to claim 1, wherein a wiring flexible board having wiring joint portions formed on the same plane is attached to the terminal portions of the individual electrode portion and the common electrode portion. Discharge head.   The droplet discharge head according to claim 1, wherein the material of the individual electrode portion, the common electrode portion, and the anode junction portion is made of ITO. A first substrate on which one or a plurality of discharge chambers are formed in which at least a part is changed in shape by an external force and droplets are discharged from a communicating nozzle;
At least a second substrate having one or a plurality of individual electrode portions that are anodically bonded to the first substrate and apply a force to selected or all of the discharge chambers when the power is supplied. Prepared,
A common electrode portion provided with a contact for connecting the first substrate to the first substrate so as to be energized, and a terminal portion of the common electrode portion provided on the same plane as a terminal portion of the individual electrode portion; A droplet discharge head configured to change the shape of the discharge chamber by applying a voltage to the terminal portions of the common electrode portion and the individual electrode portion;
Droplet supply means for supplying droplets to the droplet discharge head;
Scanning drive means for moving the droplet discharge head based on a head position control signal;
A droplet discharge apparatus comprising at least position control means for changing a relative position between a recording member to be recorded and the droplet discharge head. A method for manufacturing a droplet discharge head, in which a plurality of droplet discharge heads are integrally formed on an overlapped substrate,
A first substrate on which a member for discharging a liquid is formed by using silicon as a material, and a second substrate on which one or a plurality of individual electrode portions for discharging discharged liquid by pressurizing the member are formed as an anode When joining, it has at least the process of connecting the contact of the common electrode part which is provided on the same plane as the individual electrode part and abuts on the first substrate, and the first substrate so that energization is possible. A method of manufacturing a droplet discharge head, which is characterized. A method of manufacturing a droplet discharge device using a method of manufacturing a droplet discharge head in which a plurality of droplet discharge heads are integrally formed on an overlapped substrate,
A first substrate on which a member for discharging liquid is formed using silicon as a material, and a second substrate on which one or a plurality of individual electrode portions for discharging discharged liquid by pressurizing the member are formed are anodes. A droplet having at least a step of connecting the first substrate to the contact point of the common electrode unit that is provided on the same plane as the individual electrode unit and contacts the first substrate when joining. A method for manufacturing a droplet discharge device, wherein a method for manufacturing a discharge head is used.

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