JP2008204566A - Method for manufacturing magnetic head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the core width of a main pole by greatly reducing the influence of an optical exposure limit regarding a method for manufacturing a magnetic head. <P>SOLUTION: A polishing resistance film 2 is disposed between first and second tapered groove forming members 1 and 3, a tapered groove 5 is formed to reach the first tapered groove forming member 1 by using a hard mask 4 disposed on the second tapered groove forming member 3 as an etching mask, the tapered groove 5 is embedded with a ferromagnetic substance 6, the ferromagnetic substance 6 is polished by using the polishing resistance film 2 as a stopper film to be eliminated together with the second tapered groove forming member 3, and the ferromagnetic substance 6 left in the tapered groove 5 disposed in the first tapered groove forming member 1 is used as a main magnetic pole 7. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a magnetic head, and more particularly to a method of manufacturing a magnetic head characterized by a configuration for narrowing the core width of a single magnetic pole constituting a perpendicular recording write head from the optical exposure limit. .

  Conventionally, an HDD (Hard Disk Drive) device has been used as an information recording device in various information processing apparatuses. Recently, there has been a strong demand for a large capacity and high recording density of the information recording device.

  In order to meet the demand for higher density recording, the bit length can be reduced. However, the conventional in-plane recording method increases the problem of thermal fluctuation, so that information is recorded by magnetizing the magnetic recording medium in the vertical direction. Research and development of the perpendicular recording method has been actively conducted.

  In such a perpendicular recording system, it is necessary to narrow the track in order to increase the density. For this purpose, it is necessary to prevent the leakage magnetic field to the adjacent track. In order to prevent erasing, a structure in which a main magnetic pole shape and shields are arranged on both sides of the main magnetic pole have been proposed as countermeasures for the skew angle when the device is driven.

  For example, the main magnetic pole shape of the magnetic head for perpendicular recording has an inverted trapezoidal shape, and a side shield integrated with the trailing shield is provided on the trailing edge side (see, for example, Patent Document 1). A conventional perpendicular recording magnetic head will now be described with reference to FIG.

See FIG.
FIG. 9 is a schematic configuration diagram of a conventional magnetic head for perpendicular recording, the upper diagram is a schematic sectional view along the moving direction of the magnetic recording medium, and the lower diagram is a schematic plan view viewed from the recording medium side. It is. A conventional perpendicular recording magnetic head is provided with a lower magnetic shield layer 51, an MR element 52, an upper magnetic shield layer 53, and a main magnetic pole 54 on an AlTiC substrate (not shown). In addition to being connected at the rear end portion 56, a trailing shield 57 extending to the main magnetic pole 54 is provided at the front end portion of the return yoke 55, and a side shield 58 integrated with the trailing shield 57 is provided at a side portion of the main magnetic pole 54, The light coil 59 is provided so as to wind the rear end portion 56.
In the figure, illustration of interlayer insulating films such as Al ₂ O ₃ and resist, electrode terminals, etc. is omitted so that the magnetic structure becomes clear.

In this case, the main magnetic pole is formed by a damascene method, that is, an embedding method using a CMP (chemical mechanical polishing) method, and the process will be described with reference to FIGS.
See FIG.
First, a CMP stopper 62 made of Ta, a hard mask 63 made of NiFe, and a Ta film 64 serving as an etching mask are sequentially deposited on the alumina film 61.

Next, after applying a resist, exposure / development is performed to form a resist pattern 65 provided with an opening 66 corresponding to a predetermined core width. Next, for example, a reaction using CF ₄ using the resist pattern as a mask 65 The exposed portion of the Ta film 64 is etched by reactive ion etching to form an opening.

Next, the opening 67 is formed in the hard mask 63 by reactive ion etching using CO / NH ₃ or CH ₃ OH, for example, using the Ta film 64 with the opening formed as a mask.

See FIG.
Next, after removing the resist pattern 65, the CMP stopper 62 and the alumina film 61 are etched by, for example, reactive ion etching using Cl ₂ with the hard mask 63 having the opening 67 formed as a mask to form the tapered groove 68. Form.

  Next, after providing a plating seed layer 69, NiFe is plated by electrolytic plating to completely fill the taper groove 68 with the NiFe film 70, and then the NiFe film 70 is polished with the CMP stopper 62 as a stopper to polish the main magnetic pole. 54 is formed.

In this case, since the hard mask 63 is formed immediately above the CMP stopper 62, the width of the opening 66 provided in the resist pattern 65 and the core width of the main magnetic pole 54 are the same.
However, as the density of magnetic disk drives increases, the core width is predicted to be about 50 nm in the 500 Gbps class, and the exposure process for forming a resist becomes strict, and the entire process needs to be reviewed every time the core width shrinks. It has become.

In order to solve such a problem, there is also provided a product presumed to be provided with an alumina film for adjusting the core width before the plating seed layer 69 is formed. Here, referring to FIG. This improvement proposal will be explained.
See FIG.
First, the taper groove 68 is formed by etching the CMP stopper 62 and the alumina film 61 by, for example, reactive ion etching using Cl ₂ , using the hard mask 63 as a mask in the same manner as the conventional example described above, and then forming an ALD (atomic atom). An alumina film 71 having a thickness of, for example, 20 to 40 nm is formed by using a layer deposition method.

  Thereafter, like the above-described conventional example, after the plating seed layer 69 is provided, NiFe is plated by the electrolytic plating method, and the taper groove 68 is completely filled with the NiFe film 70, and then the NiFe film 70 is used as the NiFe film. The main magnetic pole 54 is formed by polishing the film 70.

In this case, since the alumina film 71 having a thickness of 20 to 40 nm is formed on the surface of the taper groove 68, the core width of the main magnetic pole 54 is 40 to 40 mm larger than the opening width of the taper groove 68 defined by the optical exposure limit. It can be narrowed by 80 nm.
JP 2006-252620 A

  However, even with the above improvement proposals, there is a problem in the accuracy of the film thickness of the alumina film and the unevenness of the film thickness, so there is a limit to forming the alumina film thick, so the core width of the main pole is There is still a problem that the optical exposure limit greatly affects the narrowing.

  Accordingly, an object of the present invention is to significantly reduce the influence of the optical exposure limit and reduce the core width of the main pole.

FIG. 1 is a block diagram showing the principle of the present invention, and means for solving the problems in the present invention will be described with reference to FIG.
In order to solve the above-mentioned problem, the present invention provides a polishing resistant film 2 between the first tapered groove forming member 1 and the second tapered groove forming member 3 in the magnetic head manufacturing method. A step, a step of forming a taper groove 5 reaching the first taper groove formation member 1 using the hard mask 4 provided on the second taper groove formation member 3 as an etching mask, and a step of embedding the taper groove 5 with the ferromagnetic material 6 The ferromagnetic body 6 is polished using the anti-polishing film 2 as a stopper film and removed together with the second tapered groove forming member 3, and the ferromagnetic body remaining in the tapered groove 5 provided in the first tapered groove forming member 1 is removed. And a step of making 6 a main magnetic pole 7.

  By removing the hard mask 4 in the etching process for forming the tapered groove 5 and the anti-polishing film 2 in the polishing process for removing the ferromagnetic material 6 separately in the film thickness direction, the resist is removed. The core width can be reduced by the damascene method in almost the same process regardless of the width.

  In this case, the first tapered groove forming member 1 and the second tapered groove forming member 3 are made of alumina, and the hard mask 4 is made of NiFe, CoFe, Cr, Ru, an alloy thereof, or a laminated film thereof. Thus, in the step of forming the tapered groove 5, it is typical to use reactive ion etching using a chlorine-based gas. Since the hard mask 4 made of the above-described material is not etched by the chlorine-based gas, the taper groove 5 is tapered. The groove 5 can be formed with high accuracy.

  Further, it is desirable to use a chemical mechanical polishing (CMP) method using slurry in the step of polishing the ferromagnetic material 6.

  In this case, it is desirable that the anti-polishing film 2 is a non-magnetic material, so that the magnetism of the anti-polishing film 2 does not affect the writing characteristics of the write magnetic head.

  Further, the polishing resistant film 2 is a material that is etched simultaneously with the first taper groove forming member 1 and the second taper groove forming member 3 in the step of forming the taper groove 5, for example, the first taper groove forming member 1. If the second taper groove forming member 3 is alumina, Ta may be used as the anti-polishing film 2 so as to be etched at the same time.

  Alternatively, the anti-polishing film 2 is a material having etching selectivity with respect to the first tapered groove forming member 1 and the second tapered groove forming member 3, for example, the first tapered groove forming member 1 and the second tapered groove. If the forming member 3 is alumina, either the Cr or Ru may be used as the anti-polishing film 2 and ion milling may be used in the etching process of the anti-polishing film 2.

As the shape of the taper groove 5 described above, the distance from the bottom of the taper groove 5 to the upper end of the anti-polishing film 2 is L ₁ , the distance from the upper end of the anti-polishing film 2 to the hard mask 4 is L ₂ , and the anti-polishing film 2 When the opening width of S ₁ is S ₁ and the opening width of the hard mask 4 is M ₁ ,
S ₁ : M ₁ = L ₁ : (L ₁ + L ₂ )
The width of the bottom of the tapered groove 5 may be A, the distance from the bottom of the tapered groove 5 to the upper end of the polishing resistant film 2 may be L ₁ , and the upper end of the polishing resistant film 2 to the hard mask 4 Is L ₂ , the opening width of the anti-polishing film 2 is S ₁ , and the opening width of the hard mask 4 is M ₁ ,
(S ₁ -A) :( M ₁ -A) = L ₁ : (L ₁ + L ₂ )
It may be inverted trapezoidal shape, and the S ₁ reduction ratio of S ₁ / M ₁ the core width of the main magnetic pole 7 in each case relative to the opening width M ₁ of the hard mask 4 affected by optical exposure limit be able to.

  According to the present invention, it is possible to form a main magnetic pole with a narrow core without changing the process by simply changing the film formation position of the hard mask, alumina, and stopper, thereby spreading the high recording density hard disk drive device. The place that contributes to

The present invention provides, for example, a polishing resistant film between a first tapered groove forming member made of alumina and a second tapered groove forming member, in particular, a CMP stopper made of a nonmagnetic material made of Ta, Cr, or Ru. After the film is provided, the first mask is formed by reactive ion etching using, for example, a chlorine-based gas such as BCl ₃ using a hard mask made of NiFe or CoFe provided on the second tapered groove forming member as an etching mask. After forming the taper groove reaching the taper groove forming member and then embedding the taper groove with a ferromagnetic material such as NiFe, the ferromagnetic material is typically polished by a CMP method using a polishing resistant film as a stopper film. The main magnetic pole is a ferromagnetic material that is removed together with the second tapered groove forming member and remains in the tapered groove provided in the first tapered groove forming member.
When the anti-polishing film is made of Cr or Ru, an ion milling process is added for etching the anti-polishing film.

In this case, since the shape of the tapered groove differs depending on the etching conditions, this situation will be described with reference to FIG.
See Figure 2
FIG. 2 is an explanatory diagram of the dependency of the cross-sectional shape of the tapered groove on the etching conditions. Here, when the etching target is an alumina film and the hard mask is an NiFe film, the taper is changed by changing the substrate temperature and the gas pressure. The case where a groove is formed is shown.
In this case, the flow rate of BCl ₃ is 40 sccm.

As shown in the above figure, when the substrate temperature is 80 ° C. and the gas pressure is 0.6 Pa, the etching selectivity is NiFe: Al ₂ O ₃ = 1: 10.3, and the left and right taper angles are Tapered grooves having a substantially inverted triangular shape of 10 ° and 11 °, respectively, were obtained.

Further, as shown in the middle right figure, when the substrate temperature is 80 ° C. and the gas pressure is 0.3 Pa, the etching selectivity is NiFe: Al ₂ O ₃ = 1: 14.6, An inverted trapezoidal taper groove having a taper angle of approximately 3 ° and 2 °, respectively, was obtained.

Further, as shown in the left middle diagram, when the substrate temperature is 20 ° C. and the gas pressure is 0.3 Pa, the etching selectivity is NiFe: Al ₂ O ₃ = 1: 12.1. Inverted trapezoidal tapered grooves with taper angles of 8 ° and 7 °, respectively, were obtained.

Furthermore, as shown in the figure below, when the substrate temperature is 80 ° C. and the gas pressure is 0.15 Pa, the etching selectivity increases as NiFe: Al ₂ O ₃ = 1: 24.4, and the right and left taper Tapered grooves having a substantially rectangular shape with angles of 0 ° and 1 ° were obtained.

  Therefore, the higher the gas pressure and the lower the substrate temperature, the larger the taper angle and the inverted triangular shape. Therefore, the shape of the tapered groove can be controlled by controlling the gas pressure and the substrate temperature. it can.

See Figure 3
FIG. 3 is an explanatory diagram of the core width shrinkage according to the shape of the tapered groove. The upper figure shows the case of an inverted triangular taper groove, and the lower figure shows the case of an inverted trapezoidal taper groove.
As shown in the above diagram, in the case of an inverted triangular tapered groove, the width of the opening of the hard mask 4 is M ₁ , the thickness of the second tapered groove forming member 3 is L ₂ , and the tip of the tapered groove 5 is When the depth is L ₁ from the upper end of the anti-polishing film 2 and the opening width at the upper end of the anti-polishing film 2 is S ₁ ,
M ₁ : S ₁ = (L ₂ + L ₁ ): L ₁
Thus, the reduction ratio is S ₁ / M ₁ = L ₁ / (L ₂ + L ₁ ).

As shown in the figure below, in the case of an inverted trapezoidal tapered groove, the width of the opening of the hard mask 4 is M ₁ , the thickness of the second tapered groove forming member 3 is L ₂ , and the tip of the tapered groove 5 When the depth from the upper end of the anti-polishing film 2 is L ₃ , the opening width at the upper end of the anti-polishing film 2 is S ₁ , and the width of the bottom of the tapered groove 5 is A,
(M ₁ −A): (S ₁ −A) = (L ₂ + L ₃ ): L ₃
Thus, the reduction ratio is S ₁ / M ₁ = L ₃ / (L ₂ + L ₃ ) + A {1−L ₃ / (L ₂ + L ₃ )} / M ₁ .

Here, with reference to FIG.4 and FIG.5, the formation method of the main pole of Example 1 of this invention is demonstrated. See Figure 4
First, a CMP stopper 12 made of Ta having a thickness of, for example, 20 nm and an alumina film 13 having a thickness of, for example, L ₂ = 100 nm are sequentially deposited on the alumina film 11. A Ta adhesion film 14 having a thickness of 10 nm, a hard mask 15 having a thickness of, for example, a 150 nm NiFe film, and a Ta film 16 having a thickness of, for example, a 50 nm etching mask are sequentially deposited.

Next, after applying a resist, development and exposure are performed to provide a resist pattern 17 in which an opening 18 having a width of, for example, M ₁ = 150 nm is formed.
Next, using the resist pattern 17 as a mask, the exposed portion of the Ta film 16 is etched by reactive ion etching using, for example, CF ₄ to form an opening.
At this time, for example, by using an inductive capacitive coupling type plasma etching apparatus, a power of 500 W is applied to the source, a power of 20 W is supplied to the substrate, CF ₄ is flowed at 50 sccm, and the gas pressure is set to 0.6 Pa. Etching was performed at a temperature of 80 ° C.

Next, the opening 19 is formed in the hard mask 15 by reactive ion etching using, for example, CO / NH ₃ or CH ₃ OH, using the Ta film 16 in which the opening is formed as a mask.
At this time, for example, using an inductive capacitive coupling type plasma etching apparatus, a power of 1500 W is applied to the source, a power of 520 W is supplied to the substrate, 15 sccm of CH ₃ OH is flowed to a gas pressure of 0.6 Pa, When etching was performed at a substrate temperature of 40 ° C., the NiFe etching rate was 44 nm / min and the Ta etching rate was 95 nm / min.

See Figure 5
Next, after removing the resist pattern 17, the adhesion Ta film 14, the alumina film 13, the CMP stopper 12, and the alumina are formed by reactive ion etching using, for example, BCl ₃ with the hard mask 15 having the opening 19 formed as a mask. The film 11 is etched to form an inverted triangular taper groove 20.
The Ta film 16 disappears in this etching process.

At this time, for example, by using an inductive capacitive coupling type plasma etching apparatus, power of 2000 W is applied to the source, power of 80 W is supplied to the substrate, BCl ₃ is supplied at 40 sccm, and the gas pressure is set to 0.6 Pa. Etching was performed at a temperature of 20 ° C.

At this time, when the depth of the tip of the tapered groove 20 is 50 nm as the depth L ₁ from the upper end of the CMP stopper 12, the opening width S _{1 at} the upper end of the CMP stopper 12 is
M ₁ : S ₁ = (L ₂ + L ₁ ): L ₁
Since M ₁ = 150 nm, L ₂ = 100 nm, and L ₁ = 50 nm,
S ₁ = (L ₁ × M ₁ ) / (L ₂ + L ₁ ) = 50 × 150 / (100 + 50)
= 50nm
It becomes.

Next, after providing a plating seed layer 21, NiFe is plated by electrolytic plating to completely fill the tapered groove 20 with the NiFe film 22, and then the NiFe film 22 is polished using the CMP stopper 12 as a stopper to polish the main magnetic pole. 23 is formed.
At this time, the alumina film 13 be fully polished and removed, since the polishing in the upper end of the CMP stopper 12 stops, the core width of the main magnetic pole 23 is the same 50nm and S _I.

  Thereafter, although the description is omitted, the basic configuration of the perpendicular thin film magnetic head is completed by forming a trailing shield, a write coil, a return yoke, and the like as in the conventional example.

Thus, in Example 1 of the present invention, since the alumina film is also provided on the upper part of the CMP stopper, the core width of the main pole is narrowed beyond the optical exposure limit by the film thickness L _{2 of the} alumina film. It can be of, in the above case, it is possible to greatly reduce to 1/3 of the width M ₁ of the opening having a core width in the resist pattern.

Further, since the core width of the case depends on the film thickness L ₂ and the exposure wavelength of the alumina film, by controlling the thickness L ₂ of the alumina film, when using a long exposure apparatus relatively wavelengths previous generation However, a main magnetic pole having the same core width as that of an exposure apparatus using a new generation of ultrashort wavelengths can be formed.

Next, a method of forming the main magnetic pole according to the second embodiment of the present invention will be described with reference to FIG. 6. In this case, only the shape of the taper groove is different, and the other basic configuration is the above-described embodiment. Same as 1.
See FIG.
First, as in the first embodiment, a CMP stopper 12 made of Ta having a thickness of, for example, 20 nm and an alumina film 13 having a thickness of, for example, L ₂ = 100 nm are sequentially deposited on the alumina film 11. After that, a Ta adhesion film 14 with a thickness of, for example, 10 nm, a hard mask 15 made of a NiFe film with a thickness of, for example, 150 nm, and a Ta film that becomes an etching mask with a thickness of, for example, 50 nm, in that order. Deposit.

Next, after applying a resist, development and exposure are performed to provide a resist pattern in which an opening having a width of, for example, M ₁ = 150 nm is formed, and then using the resist pattern as a mask, for example, reactivity using CF ₄ The exposed portion of the Ta film is etched by ion etching to form an opening.

Next, using the Ta film in which the opening is formed as a mask, the opening 19 is formed in the hard mask 15 by, for example, reactive ion etching using CO / NH ₃ or CH ₃ OH, and then the resist pattern is removed. Using the hard mask 15 having the openings 19 as a mask, for example, in reactive ion etching using BCl ₃ , by controlling the gas pressure and the substrate temperature, the adhesion Ta film 14, the alumina film 13, and the CMP stopper 12 and the alumina film 11 are etched to form an inverted trapezoidal tapered groove 24.

At this time, for example, by using an inductive capacitive coupling type plasma etching apparatus, power of 2000 W is applied to the source, power of 80 W is supplied to the substrate, BCl ₃ is supplied at 40 sccm, and the gas pressure is set to 0.6 Pa. Etching was performed at a temperature of 20 ° C.

In this case, when the depth of the tip of the tapered groove 24 is L ₃ from the upper end of the CMP stopper 12, the opening width S _{1 at} the upper end of the CMP stopper 12 is:
(M ₁ −A): (S ₁ −A) = (L ₂ + L ₃ ): L ₃
It becomes.

Thereafter, similarly to the first embodiment, after the plating seed layer 21 is provided, NiFe is plated by the electrolytic plating method, and after the taper groove 24 is completely filled with the NiFe film 22, the CMP stopper 12 is formed. The main magnetic pole 25 is formed by polishing the NiFe film 22 as a stopper.
At this time, the alumina film 13 be completely polished and removed, since the polishing in the upper end of the CMP stopper 12 stops, the core width of the main magnetic pole 25 is the same as S _I.

  Thus, in Example 2 of the present invention, the temperature and gas pressure under the etching conditions for forming the tapered groove are higher than those in Example 1 and the gas pressure is lower, so that the inverted trapezoidal shape is obtained. The main magnetic pole can be used.

Next, with reference to FIGS. 7 and 8, the method of forming the main magnetic pole of Example 3 of the present invention will be described. In this case, the CMP stopper is made of a nonmagnetic material that cannot be etched by reactive ion etching. However, other basic configurations are the same as those in the first embodiment.
See FIG.
First, after a CMP stopper 31 made of Cr having a thickness of, for example, 20 nm and an alumina film 13 having a thickness of, for example, L ₂ = 100 nm are sequentially deposited on the alumina film 11, the thickness is, for example, A Ta adhesion film 14 having a thickness of 10 nm, a hard mask 15 having a thickness of, for example, a 150 nm NiFe film, and a Ta film 16 having a thickness of, for example, a 50 nm etching mask are sequentially deposited.

Next, after applying a resist, development and exposure are performed to provide a resist pattern 17 having an opening 18 with a width of, for example, M ₁ = 150 nm, and then using the resist pattern 17 as a mask, for example, using CF ₄ The exposed portion of the Ta film 16 is etched by the reactive ion etching, thereby forming an opening.

Next, the opening 19 is formed in the hard mask 15 by reactive ion etching using, for example, CO / NH ₃ or CH ₃ OH, using the Ta film 16 in which the opening is formed as a mask.

Next, after removing the resist pattern, the adhesive Ta film 14 and the alumina film 13 are etched by, for example, reactive ion etching using BCl ₃ by using the hard mask 15 having the openings 19 as a mask to form a tapered groove. 32 is formed.
At this time, since the Cr film is not etched by BCl ₃ , the etching is stopped by the CMP stopper 31.

Next, the CMP stopper 31 made of a Cr film is etched by ion milling using Ar ions to form an opening 33 having a width of S ₁ .
In this ion milling, for example, the end point is detected by detecting Cr using a SIMS (secondary ion mass spectrometer).
Or you may make it complete | finish etching by time management based on the ion milling speed measured beforehand.

Next, the alumina film 11 is etched again by reactive ion etching using BCl ₃ to form a tapered groove 34.
In this etching process, since the Cr film is not etched, the opening 33 does not expand. Therefore, the width of the opening 33, that is, the core width is determined by the etching conditions in the first etching process and is inverted trapezoidal depending on the etching time. It also becomes an inverted triangle shape.

See FIG.
Thereafter, similarly to the first embodiment, after the plating seed layer 21 is provided, NiFe is plated by the electrolytic plating method, and the taper groove 34 is completely filled with the NiFe film 22, and then the CMP stopper 12 is formed. The main magnetic pole 35 is formed by polishing the NiFe film 22 as a stopper.
At this time, the alumina film 13 be completely polished and removed, since the polishing in the upper end of the CMP stopper 31 stops, the core width of the main magnetic pole 35 is the same as S _I.

  Thus, in Example 3 of the present invention, since an ion milling process is added, any material can be used as long as it is not limited by the material used for the CMP stopper and does not affect the magnetic characteristics. Therefore, the degree of design freedom increases.

  As mentioned above, although each Example of this invention was described, this invention is not restricted to the structure, conditions, and numerical value which were shown in each Example, A various change is possible, for example, in each said Example The film thickness of the upper alumina film is merely an example, and is appropriately changed according to the required core width and exposure wavelength of the main magnetic pole.

Here, referring to FIG. 1 again, the detailed features of the present invention will be described again.
Again see Figure 1
(Additional remark 1) The process of providing the abrasion-resistant film | membrane 2 between the 1st taper groove formation member 1 and the 2nd taper groove formation member 3, The hard mask 4 provided on the said 2nd taper groove formation member 3 is provided. Forming a taper groove 5 reaching the first taper groove forming member 1 as an etching mask, embedding the taper groove 5 with a ferromagnetic material 6, and using the ferromagnetic material 6 as the stopper film for the polishing film 2. Polishing and removing together with the second taper groove forming member 3 and using the ferromagnetic material 6 remaining in the taper groove 5 provided in the first taper groove forming member 1 as a main magnetic pole 7. A method of manufacturing a magnetic head.
(Supplementary Note 2) The first taper groove forming member 1 and the second taper groove forming member 3 are made of alumina, and the hard mask 4 is made of NiFe, CoFe, Cr, Ru, or an alloy thereof, or an alloy thereof. 2. The method of manufacturing a magnetic head according to claim 1, wherein the step of forming the tapered groove 5 made of a laminated film uses reactive ion etching using a chlorine-based gas.
(Additional remark 3) The manufacturing method of the magnetic head of Additional remark 1 or 2 characterized by using the chemical mechanical polishing method using a slurry in the process of grind | polishing the said ferromagnetic material 6.
(Additional remark 4) The said anti-polishing film 2 is a nonmagnetic material, The manufacturing method of the magnetic head any one of Additional remark 1 thru | or 3 characterized by the above-mentioned.
(Supplementary Note 5) The polishing-resistant film 2 is etched simultaneously with the first tapered groove forming member 1 and the second tapered groove forming member 3 in the step of forming the tapered groove 5. The method for manufacturing a magnetic head according to appendix 4.
(Supplementary note 6) The magnetic head according to supplementary note 5, wherein the first tapered groove forming member 1 and the second tapered groove forming member 3 are made of alumina, and the polishing-resistant film 2 is made of Ta. Production method.
(Supplementary Note 7) The polishing resistant film 2 has etching selectivity with respect to the first tapered groove forming member 1 and the second tapered groove forming member 3, and in the etching process of the polishing resistant film 2 The method of manufacturing a magnetic head according to appendix 4, wherein ion milling is used.
(Additional remark 8) The said 1st taper groove formation member 1 and the 2nd taper groove formation member 3 are alumina, and the said abrasion-resistant film | membrane 2 consists of either Cr or Ru, Additional remark 7 characterized by the above-mentioned. A manufacturing method of the magnetic head.
(Supplementary Note 9) The shape of the tapered groove 5 is such that the distance from the bottom of the tapered groove 5 to the upper end of the anti-polishing film 2 is L ₁ , and the distance from the upper end of the anti-polishing film 2 to the hard mask 4 is L ₂ , when the opening width of the anti-polishing film 2 is S ₁ and the opening width of the hard mask 4 is M ₁ ,
S ₁ : M ₁ = L ₁ : (L ₁ + L ₂ )
Or the width of the bottom of the taper groove 5 is A, the distance from the bottom of the taper groove 5 to the upper end of the anti-polishing film 2 is L ₁ , and the hard mask from the upper end of the anti-polishing film 2 is When the distance up to 4 is L ₂ , the opening width of the anti-polishing film 2 is S ₁ , and the opening width of the hard mask 4 is M ₁ ,
(S ₁ -A) :( M ₁ -A) = L ₁ : (L ₁ + L ₂ )
The method of manufacturing a magnetic head according to any one of appendices 1 to 8, wherein the magnetic head has an inverted trapezoidal shape.

  As a practical example of the present invention, a composite thin film magnetic head laminated with a reproducing head such as a GMR element is typical. However, the invention is not limited to a composite thin film magnetic head. The present invention is also applicable to a single magnetic head that performs writing and reproduction by a magnetic head.

It is explanatory drawing of the fundamental structure of this invention. It is explanatory drawing of the etching condition dependence of the cross-sectional shape of a taper groove. It is explanatory drawing of the core width shrink according to the shape of a taper groove. It is explanatory drawing of the formation method to the middle of the main pole of Example 1 of this invention. It is explanatory drawing of the formation method after FIG. 4 of the main pole of Example 1 of this invention. It is explanatory drawing of the formation method of the main pole of Example 2 of this invention. It is explanatory drawing of the formation method to the middle of the main pole of Example 3 of this invention. It is explanatory drawing of the formation method after FIG. 7 of the main pole of Example 3 of this invention. It is a schematic block diagram of a conventional magnetic head for perpendicular recording. It is explanatory drawing of the manufacturing process to the middle of the conventional magnetic head for perpendicular recording. It is explanatory drawing of the manufacturing process after FIG. 10 of the conventional magnetic head for perpendicular recording. It is explanatory drawing of the manufacturing process of the conventional improved type magnetic head for perpendicular recording.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st taper groove forming member 2 Polishing-resistant film 3 2nd taper groove forming member 4 Hard mask 5 Tapered groove 6 Ferromagnetic material 7 Main magnetic pole 11 Alumina film 12 CMP stopper 13 Alumina film 14 Ta adhesion film 15 Hard mask 16 Ta film 17 Resist patterns 18 and 19 Opening 20 Tapered groove 21 Plating seed layer 22 NiFe film 23 Main magnetic pole 24 Tapered groove 25 Main magnetic pole 31 CMP stopper 32 Tapered groove 33 Opening 34 Taper groove 35 Main magnetic pole 51 Lower magnetic shield layer 52 MR element 53 Upper magnetic shield layer 54 Main magnetic pole 55 Return yoke 56 Rear end 57 Trailing shield 58 Side shield 59 Write coil 61 Alumina film 62 CMP stopper 63 Hard mask 64 Ta film 65 Resist pattern 66, 67 Opening 68 Taper groove 69 Plating seed layer 7 0 NiFe film 71 Alumina film

Claims (5)

A step of providing an anti-polishing film between the first taper groove forming member and the second taper groove forming member; and using the hard mask provided on the second taper groove forming member as an etching mask, the first taper groove Forming a tapered groove reaching the forming member, embedding the tapered groove with a ferromagnetic material, polishing the ferromagnetic material with the polishing-resistant film as a stopper film and removing it together with the second tapered groove forming member, And a step of using the ferromagnetic material remaining in the tapered groove provided in the first tapered groove forming member as a main magnetic pole. The first taper groove forming member and the second taper groove forming member are made of alumina, and the hard mask is made of any one of NiFe, CoFe, Cr, Ru, an alloy thereof, or a laminated film thereof. 2. The method of manufacturing a magnetic head according to claim 1, wherein in the step of forming the tapered groove, reactive ion etching using a chlorine-based gas is used. 3. The magnetic head according to claim 2, wherein the polishing-resistant film is etched simultaneously with the first tapered groove forming member and the second tapered groove forming member in the step of forming the tapered groove. Production method. The polishing resistant film has etching selectivity with respect to the first tapered groove forming member and the second tapered groove forming member, and ion milling is used in the etching process of the polishing resistant film. A method of manufacturing a magnetic head according to claim 2. The shape of the tapered groove is such that the distance from the bottom of the tapered groove to the upper end of the polishing-resistant film is L ₁ , the distance from the upper end of the polishing-resistant film to the hard mask is L ₂ , and the opening width of the polishing-resistant film Is S ₁ and the opening width of the hard mask is M ₁ ,
S ₁ : M ₁ = L ₁ : (L ₁ + L ₂ )
Inverted triangle shape, or the width of the bottom of the tapered groove A, L ₁ the distance from the bottom of the tapered groove to the upper end of the abrasion layer, the distance from the top of the abrasion layer to the hard mask L ₂ , when the opening width of the anti-polishing film is S ₁ and the opening width of the hard mask is M ₁ ,
(S ₁ -A) :( M ₁ -A) = L ₁ : (L ₁ + L ₂ )
5. The method of manufacturing a magnetic head according to claim 1, wherein the magnetic head has an inverted trapezoidal shape.

Images