JP2008203186A - Substrate laminating method, manufacturing method of microchip, and the microchip - Google Patents

Substrate laminating method, manufacturing method of microchip, and the microchip Download PDF

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Publication number
JP2008203186A
JP2008203186A JP2007042182A JP2007042182A JP2008203186A JP 2008203186 A JP2008203186 A JP 2008203186A JP 2007042182 A JP2007042182 A JP 2007042182A JP 2007042182 A JP2007042182 A JP 2007042182A JP 2008203186 A JP2008203186 A JP 2008203186A
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Japan
Prior art keywords
substrate
light
bonding surface
microchip
thermoplastic resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007042182A
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Japanese (ja)
Inventor
Takaaki Shimazaki
▲隆▼章 嶋▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2007042182A priority Critical patent/JP2008203186A/en
Priority to PCT/JP2008/050675 priority patent/WO2008102585A1/en
Publication of JP2008203186A publication Critical patent/JP2008203186A/en
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
    • B29C65/1435—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface at least passing through one of the parts to be joined, i.e. transmission welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/16—Laser beams
    • B29C65/1629—Laser beams characterised by the way of heating the interface
    • B29C65/1635—Laser beams characterised by the way of heating the interface at least passing through one of the parts to be joined, i.e. laser transmission welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/16—Laser beams
    • B29C65/1629—Laser beams characterised by the way of heating the interface
    • B29C65/1654—Laser beams characterised by the way of heating the interface scanning at least one of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/16—Laser beams
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/16—Laser beams
    • B29C65/1677—Laser beams making use of an absorber or impact modifier
    • B29C65/168—Laser beams making use of an absorber or impact modifier placed at the interface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/18—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using heated tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/72—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by combined operations or combined techniques, e.g. welding and stitching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/02—Preparation of the material, in the area to be joined, prior to joining or welding
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    • B29C66/0242—Heating, or preheating, e.g. drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B29C66/1122—Single lap to lap joints, i.e. overlap joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/114—Single butt joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/50—General aspects of joining tubular articles; General aspects of joining long products, i.e. bars or profiled elements; General aspects of joining single elements to tubular articles, hollow articles or bars; General aspects of joining several hollow-preforms to form hollow or tubular articles
    • B29C66/51—Joining tubular articles, profiled elements or bars; Joining single elements to tubular articles, hollow articles or bars; Joining several hollow-preforms to form hollow or tubular articles
    • B29C66/53—Joining single elements to tubular articles, hollow articles or bars
    • B29C66/534—Joining single elements to open ends of tubular or hollow articles or to the ends of bars
    • B29C66/5346—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat
    • B29C66/53461—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat joining substantially flat covers and/or substantially flat bottoms to open ends of container bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/73—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/733—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the optical properties of the material of the parts to be joined, e.g. fluorescence, phosphorescence
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    • B29C66/73361—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the optical properties of the material of the parts to be joined, e.g. fluorescence, phosphorescence at least one of the parts to be joined being opaque, transparent or translucent to visible light at least one of the parts to be joined being opaque to visible light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/73—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/733—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the optical properties of the material of the parts to be joined, e.g. fluorescence, phosphorescence
    • B29C66/7336—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the optical properties of the material of the parts to be joined, e.g. fluorescence, phosphorescence at least one of the parts to be joined being opaque, transparent or translucent to visible light
    • B29C66/73365—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the optical properties of the material of the parts to be joined, e.g. fluorescence, phosphorescence at least one of the parts to be joined being opaque, transparent or translucent to visible light at least one of the parts to be joined being transparent or translucent to visible light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/73—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/739—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/7392—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the material of at least one of the parts being a thermoplastic
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate laminating method that has superior productivity, causes no deformation of channel patterns, even if a fine channel pattern is formed on a substrate, and to provide a manufacturing method of microchips, and microchips with the deformation of a fluid circuit controlled. <P>SOLUTION: The method for laminating a first substrate (101), consisting of a thermoplastic resin through which light transmits and a second substrate (102) consisting of a thermoplastic resin in which a light-absorbing substance is dispersed, comprises steps of (A) adjusting the temperature of the laminated surface, of at least one of substrates close to the glass transition temperature of the thermoplastic resin that constitutes the substrate by a heating plate (104), and the like, (B) applying pressure on the superimposed first substrate (101) and the second substrate (102), and (C) irradiating a light (105) to the light-absorbing substance via the first substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、基板の貼り合わせ方法、マイクロチップの製造方法およびマイクロチップに関する。   The present invention relates to a substrate bonding method, a microchip manufacturing method, and a microchip.

近年、医療や健康、食品、創薬などの分野で、ＤＮＡ（Ｄｅｏｘｙｒｉｂｏ Ｎｕｃｌｅｉｃ Ａｃｉｄ）や酵素、抗原、抗体、タンパク質、ウィルスおよび細胞などの生体物質、ならびに化学物質を検知、検出あるいは定量する重要性が増してきており、それらを簡便に測定できる様々なバイオチップおよびマイクロ化学チップ（以下、これらを総称してマイクロチップと称する。）が提案されている。   In recent years, the importance of detecting, detecting or quantifying biological substances such as DNA (Deoxyribo Nucleic Acid), enzymes, antigens, antibodies, proteins, viruses and cells, and chemical substances in fields such as medicine, health, food, and drug discovery There have been proposed various biochips and microchemical chips (hereinafter collectively referred to as microchips) that can be easily measured.

マイクロチップは、その内部に流体回路を有しており、該流体回路は、たとえば検査・分析の対象となるサンプル（たとえば、血液等）を処理する、あるいは該サンプルと反応させるための液体試薬を保持する液体試薬保持室、該サンプルと液体試薬とを混合する混合室、混合液について分析および／または検査するための検出部などの各部と、これら各部を適切に接続する微細な流路（数百μｍ程度の幅）とから主に構成される。このような流体回路を有するマイクロチップは、実験室で行なっている一連の実験・分析操作を、数ｃｍ角で厚さ数ｍｍ程度のチップ内で行なえることから、サンプルおよび試薬が微量で済み、コストが安く、反応速度が速く、ハイスループットな検査ができ、サンプルを採取した現場で直ちに検査結果を得ることができるなど多くの利点を有し、たとえば血液検査等の生化学検査用として好適に用いられている。   The microchip has a fluid circuit therein, and the fluid circuit processes, for example, a sample to be examined and analyzed (for example, blood) or a liquid reagent for reacting with the sample. Each part such as a liquid reagent holding chamber to be held, a mixing chamber for mixing the sample and the liquid reagent, a detection part for analyzing and / or inspecting the mixed liquid, and a fine flow path (several number) appropriately connecting these parts The width is about 100 μm). A microchip having such a fluid circuit can perform a series of experiments and analysis operations performed in a laboratory in a chip of several centimeters square and several millimeters in thickness. It has many advantages such as low cost, high reaction speed, high throughput testing, and the ability to obtain test results immediately at the site where the sample is taken, and is suitable for biochemical tests such as blood tests. It is used for.

ところで、マイクロチップは、通常、流体回路を構成する凹部（溝）が形成された基板と、平坦な基板とを貼り合せることにより作製される。従来、熱可塑性樹脂からなる２つの基板の貼り合わせには、光（たとえばレーザ光）照射による溶着が用いられてきた（たとえば特許文献１）。この光照射による溶着においては、２枚の熱可塑性樹脂基板のうち、一方を光透過性基板とし、他方を光吸収性基板として、この両者を重ね合わせて圧力を印加した後、透明基板側から光を照射する。光照射により、貼り合わせ面の温度が融点を超えると、基板が融解して両基板が接合される。
特公昭６２−４９８５０号公報 By the way, a microchip is usually manufactured by bonding a substrate on which a recess (groove) constituting a fluid circuit is formed and a flat substrate. Conventionally, welding by light (for example, laser beam) irradiation has been used for bonding two substrates made of thermoplastic resin (for example, Patent Document 1). In this welding by light irradiation, one of the two thermoplastic resin substrates is a light-transmitting substrate and the other is a light-absorbing substrate. Irradiate light. When the temperature of the bonded surface exceeds the melting point due to light irradiation, the substrates are melted and the two substrates are bonded.
Japanese Examined Patent Publication No. 62-49850

しかしながら、上記光照射による溶着には以下のような課題があった。すなわち、光透過性基板と光吸収性基板との貼り合わせ面に間隙があると光照射しても溶着しない。間隙をなくすために大きな圧力と大きな光エネルギーを印加すると、流体回路、特に微細な流路パターンの断面変形が大きくなる。また、光透過性基板および光吸収性基板の貼り合わせ面が融点に到達するには長時間の光照射が必要であり、生産性が悪い。   However, welding by the above light irradiation has the following problems. That is, if there is a gap on the bonding surface between the light-transmitting substrate and the light-absorbing substrate, welding does not occur even when light is irradiated. When a large pressure and a large light energy are applied to eliminate the gap, the cross-sectional deformation of the fluid circuit, particularly a fine flow path pattern, becomes large. In addition, light irradiation for a long time is required for the bonding surfaces of the light-transmitting substrate and the light-absorbing substrate to reach the melting point, and productivity is poor.

本発明は、上記課題を解決するためになされたものであって、その目的は、生産性がよく、基板に微細な流路パターンが形成されている場合であっても、該流路パターンの変形を生じない基板の貼り合わせ方法を提供することである。   The present invention has been made in order to solve the above-described problems, and the object of the present invention is to improve productivity, even when a fine flow path pattern is formed on a substrate. It is to provide a method for bonding substrates without causing deformation.

また、本発明の別の目的は、生産性がよく、微細な流路パターン等の流体回路の変形を生じないマイクロチップの製造方法および、２つの基板を貼り合わせてなるマイクロチップであって、流体回路の変形が抑制されているマイクロチップを提供することである。   Another object of the present invention is a microchip manufacturing method that is good in productivity and does not cause deformation of a fluid circuit such as a fine flow path pattern, and a microchip formed by bonding two substrates, To provide a microchip in which deformation of a fluid circuit is suppressed.

本発明者は、鋭意検討した結果、光照射による溶着の前に、貼り合わせる２つの基板のうち少なくとも１の基板の貼り合わせ面の温度を、その基板を構成する熱可塑性樹脂のガラス転移温度近傍に設定した後、当該２つの基板を重ね、圧力を印加して溶着を行なうことにより上記課題が解決されることを見出した。すなわち、本発明は以下のとおりである。   As a result of intensive studies, the inventor has determined that the temperature of the bonding surface of at least one of the two substrates to be bonded before the welding by light irradiation is close to the glass transition temperature of the thermoplastic resin constituting the substrate. It was found that the above-mentioned problem can be solved by superposing the two substrates and applying pressure to perform welding. That is, the present invention is as follows.

本発明は、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせる方法であって、以下の（Ａ）〜（Ｃ）の工程、
（Ａ）第１の基板および第２の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程と、
（Ｂ）上記第１の基板および上記第２の基板を重ね合わせて、圧力を印加する工程と、
（Ｃ）上記第１の基板を介して、上記光吸収物質に対して光を照射する工程と、を含む基板の貼り合わせ方法を提供する。 According to the present invention, a first substrate made of a thermoplastic resin that transmits light is bonded to a second substrate made of a thermoplastic resin in which a light-absorbing substance is dispersed on at least a bonding surface of the first substrate. A method comprising the following steps (A) to (C):
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate in the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate;
(B) overlaying the first substrate and the second substrate and applying pressure;
(C) A step of irradiating the light-absorbing substance with light through the first substrate.

ここで、上記工程（Ａ）における温度調整は、熱板を用いて行なわれることが好ましい。   Here, the temperature adjustment in the step (A) is preferably performed using a hot plate.

また、本発明は、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップの製造方法であって、以下の（Ａ）〜（Ｃ）の工程、
（Ａ）第１の基板および第２の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程と、
（Ｂ）上記第１の基板および上記第２の基板を重ね合わせて、圧力を印加する工程と、
（Ｃ）上記第１の基板を介して、上記光吸収物質に対して光を照射する工程と、を含むマイクロチップの製造方法を提供する。 In the present invention, a concave portion for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light, and at least the first substrate. A manufacturing method of a microchip having a fluid circuit inside, in which a light-absorbing material is dispersed on a bonding surface and bonded to a second substrate made of a thermoplastic resin, and includes the following (A) to (C ) Process,
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate in the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate;
(B) overlaying the first substrate and the second substrate and applying pressure;
(C) A method of manufacturing a microchip, comprising: irradiating the light absorbing material with light through the first substrate.

さらに本発明は、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップであって、上記第１の基板と上記第２の基板とは、少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整した後、両基板を重ね合わせて圧力を印加し、上記第１の基板を介して、上記光吸収物質に対して光を照射することにより貼り合わされているマイクロチップを提供する。   Further, according to the present invention, a recess for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light is bonded to at least the first substrate. A microchip having a fluid circuit inside, in which a light-absorbing material is dispersed on a mating surface and bonded to a second substrate made of a thermoplastic resin, the first substrate, the second substrate, After adjusting the temperature of the bonding surface of at least one of the substrates to the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate, the two substrates are superposed and pressure is applied to the substrate through the first substrate. And providing a microchip bonded by irradiating the light absorbing material with light.

また本発明は、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップであって、上記流体回路の内部壁面のうち、上記第２の基板の貼り合わせ面によって形成された壁面の表面粗さが、５０μｍ未満である、マイクロチップを提供する。   According to the present invention, a recess for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light is bonded to at least the first substrate. A microchip having a fluid circuit inside, in which a light-absorbing substance is dispersed on a mating surface and bonded to a second substrate made of a thermoplastic resin, and the second of the inner wall surfaces of the fluid circuit. Provided is a microchip in which the surface roughness of the wall surface formed by the bonding surface of the substrate is less than 50 μm.

本発明の基板の貼り合わせ方法によれば、生産性よく、基板を貼り合せることができ、基板に微細な流路パターンが形成されている場合であっても、該流路パターンの変形を抑制することができる。   According to the substrate bonding method of the present invention, substrates can be bonded with high productivity, and even when a fine channel pattern is formed on the substrate, deformation of the channel pattern is suppressed. can do.

また、本発明のマイクロチップの製造方法によれば、生産性よく、マイクロチップを製造することができ、得られるマイクロチップは、微細な流路パターン等の流体回路の変形が従来と比較して大幅に抑制されている。特に、本発明のマイクロチップにおいては、光吸収物質が分散された第２の基板の貼り合わせ面が形成する流体回路の内部壁面の表面粗さが従来と比較して大幅に改善されている。   Moreover, according to the microchip manufacturing method of the present invention, a microchip can be manufactured with high productivity, and the resulting microchip has a fluid circuit deformation such as a fine flow path pattern as compared with the conventional one. It is greatly suppressed. In particular, in the microchip of the present invention, the surface roughness of the inner wall surface of the fluid circuit formed by the bonding surface of the second substrate in which the light-absorbing substance is dispersed is greatly improved as compared with the prior art.

＜基板の貼り合わせ方法およびマイクロチップの製造方法＞
本発明の基板の貼り合わせ方法は、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせる方法であって、以下の（Ａ）〜（Ｃ）の工程、
（Ａ）第１の基板および第２の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程（以下、予備加熱工程ともいう）と、
（Ｂ）上記第１の基板および上記第２の基板を重ね合わせて、圧力を印加する工程と、
（Ｃ）上記第１の基板を介して、上記光吸収物質に対して光を照射する工程と、を含むことを特徴とする。本発明の基板の貼り合わせ方法によれば、生産性よく、熱可塑性樹脂からなる基板を貼り合わせることができ、基板に微細な流路パターンが形成されている場合であっても、該流路パターンの変形を抑制することができる。 <Substrate bonding method and microchip manufacturing method>
In the method for bonding substrates according to the present invention, a light-absorbing substance is dispersed on a bonding surface between a first substrate made of a thermoplastic resin that transmits light and at least the first substrate, and a second substrate made of a thermoplastic resin. A method of bonding the substrate to the following steps (A) to (C):
(A) A step of adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate to the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate (hereinafter referred to as a preheating step) Say)
(B) overlaying the first substrate and the second substrate and applying pressure;
(C) irradiating the light-absorbing substance with light through the first substrate. According to the method for laminating a substrate of the present invention, a substrate made of a thermoplastic resin can be bonded with good productivity, and even if a fine channel pattern is formed on the substrate, the channel Pattern deformation can be suppressed.

本発明の基板の貼り合わせ方法は、マイクロチップの製造に好適に用いることができる。すなわち、第１の基板として、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成された、光を透過する熱可塑性樹脂からなる基板を用い、当該第１の基板と、上記した第２の基板とを、上記方法により貼り合わせることによって、内部に流体回路を有するマイクロチップを製造することができる。当該方法により製造されたマイクロチップは、微細な流路パターン等の流体回路の変形が従来と比較して大幅に抑制されている。特に、光吸収物質が分散された第２の基板の貼り合わせ面が形成する流体回路の内部壁面の表面粗さが従来と比較して大幅に改善されている。   The substrate bonding method of the present invention can be suitably used for manufacturing a microchip. That is, as the first substrate, a substrate made of a thermoplastic resin that transmits light and in which a recess for forming a fluid circuit is formed on at least a part of the bonding surface, the first substrate, A microchip having a fluid circuit therein can be manufactured by bonding the second substrate to the second substrate by the above method. In the microchip manufactured by this method, deformation of the fluid circuit such as a fine flow path pattern is greatly suppressed as compared with the conventional one. In particular, the surface roughness of the inner wall surface of the fluid circuit formed by the bonding surface of the second substrate in which the light-absorbing substance is dispersed is greatly improved as compared with the prior art.

まず、本発明の基板の貼り合わせ方法およびマイクロチップの製造方法に用いられる基板について説明する。本発明においては、貼り合わせる一方の基板（第１の基板）には、光を透過する熱可塑性樹脂を用いる。このような熱可塑性樹脂としては、たとえばポリエチレンテレフタラート（ＰＥＴ）、ポリスチレン（ＰＳ）、ポリプロピレン（ＰＰ）、ＡＢＳ樹脂（ＡＢＳ）、ポリアセタール（ＰＯＭ）、ポリアミド（ＰＡ）、ポリカーボネート（ＰＣ）、ポリブチレンテレフタラート（ＰＢＴ）、ポリメタクリル酸メチル（ＰＭＭＡ）等のアクリル系樹脂などを挙げることができる。第１の基板には、たとえばマイクロチップを製造する場合のように、貼り合わせ面の少なくとも一部に流体回路等を構成する凹部（溝）が施されていてもよい。   First, the substrate used in the method for bonding substrates and the method for manufacturing microchips of the present invention will be described. In the present invention, a thermoplastic resin that transmits light is used for one substrate (first substrate) to be bonded. Examples of such thermoplastic resins include polyethylene terephthalate (PET), polystyrene (PS), polypropylene (PP), ABS resin (ABS), polyacetal (POM), polyamide (PA), polycarbonate (PC), and polybutylene. Examples thereof include acrylic resins such as terephthalate (PBT) and polymethyl methacrylate (PMMA). The first substrate may be provided with a recess (groove) constituting a fluid circuit or the like on at least a part of the bonding surface as in the case of manufacturing a microchip, for example.

貼り合わせる他方の基板（第２の基板）もまた、熱可塑性樹脂からなり、具体例として上記したものを挙げることができる。第２の基板には、光を吸収して発熱する光吸収物質が分散されている。光吸収物質としては、たとえば色素を挙げることができ、その中でもカーボンブラックを好適に用いることができる。光吸収物質は、少なくとも第２の基板の貼り合わせ面上に分散されていればよい。たとえば、基板の貼り合わせ面側に光吸収物質が分散された層が形成された構成としてもよく、あるいは第２の基板全体に光吸収物質が分散されていてもよい。   The other substrate (second substrate) to be bonded is also made of a thermoplastic resin, and specific examples include those described above. A light absorbing material that absorbs light and generates heat is dispersed in the second substrate. Examples of the light absorbing substance include a dye, and among these, carbon black can be preferably used. The light absorbing material only needs to be dispersed on at least the bonding surface of the second substrate. For example, a structure in which a layer in which a light absorbing material is dispersed is formed on the bonding surface side of the substrate, or the light absorbing material may be dispersed throughout the second substrate.

ここで、第１の基板と第２の基板とは、同種の熱可塑性樹脂からなることが好ましい。両基板を同種の樹脂とすることにより、光照射によって両基板の貼り合わせ面が同時に融解するため、密着強度をより高くすることができる。また、両基板を同種の樹脂とすることにより、工程（Ｂ）において、第１の基板と第２の基板を重ね合わせ、圧力を印加した際、両基板の貼り合わせ面が柔軟性を示すため、溶着をより確実に行なうことができる。第１の基板と第２の基板とは、異種の熱可塑性樹脂からなっていてもよいが、その場合、それらのガラス転移温度および／または融点が近いことが好ましい。以下、実施の形態を示して本発明の基板の貼り合わせ方法およびマイクロチップの製造方法をより詳細に説明する。   Here, the first substrate and the second substrate are preferably made of the same kind of thermoplastic resin. By making both the substrates the same type of resin, the bonding surfaces of both the substrates are simultaneously melted by light irradiation, so that the adhesion strength can be further increased. In addition, since both substrates are made of the same kind of resin, when the first substrate and the second substrate are overlapped and pressure is applied in the step (B), the bonding surface of both substrates exhibits flexibility. , Welding can be performed more reliably. The first substrate and the second substrate may be made of different types of thermoplastic resins, but in that case, their glass transition temperature and / or melting point are preferably close. Hereinafter, the substrate bonding method and the microchip manufacturing method of the present invention will be described in more detail with reference to embodiments.

（第１の実施形態）
図１は、本発明のマイクロチップの製造方法の第１の実施形態を示す概略工程図であり、各段階における基板の断面図を示している。なお、以下に示すマイクロチップの製造方法に係る一実施形態は、本発明の基板の貼り合わせ方法の一実施形態でもあるが、本発明の基板の貼り合わせ方法においては、第１の基板は、必ずしもその貼り合わせ面に凹部を有している必要はない。 (First embodiment)
FIG. 1 is a schematic process diagram showing a first embodiment of a method of manufacturing a microchip according to the present invention, and shows cross-sectional views of a substrate at each stage. One embodiment of the microchip manufacturing method described below is also an embodiment of the substrate bonding method of the present invention. In the substrate bonding method of the present invention, the first substrate is: The bonding surface does not necessarily have a recess.

まず、図１（ａ）に示されるように、基板全体に光吸収物質が分散された第２の基板１０２を、所定の温度に加熱された熱板１０４上に載置することにより加熱し、少なくとも第１の基板１０１（図１（ａ）において図示せず）との貼り合わせ面１０２ａの温度が、該第２の基板１０２を構成する熱可塑性樹脂のガラス転移温度近傍となるように調整する（工程（Ａ））。貼り合わせ面１０２ａの温度をガラス転移温度近傍とする予備加熱を行なうことにより、貼り合わせ面１０２ａにおける樹脂の柔軟性が増すため、後の工程（工程（Ｂ））において、第１の基板１０１と重ね合わせ、圧力を印加する際、わずかな圧力で基板間の間隙をなくすことができるとともに、最終的な基板間の密着性を向上させることができる。   First, as shown in FIG. 1 (a), the second substrate 102 in which the light absorbing material is dispersed throughout the substrate is heated by being placed on a hot plate 104 heated to a predetermined temperature, At least the temperature of the bonding surface 102a with the first substrate 101 (not shown in FIG. 1A) is adjusted to be close to the glass transition temperature of the thermoplastic resin that constitutes the second substrate 102. (Step (A)). By performing preliminary heating with the temperature of the bonding surface 102a in the vicinity of the glass transition temperature, the flexibility of the resin on the bonding surface 102a is increased. Therefore, in the subsequent step (step (B)), the first substrate 101 and When the pressure is applied, the gap between the substrates can be eliminated with a slight pressure, and the final adhesion between the substrates can be improved.

ここで、本明細書において「ガラス転移温度」とは、熱可塑性樹脂を加熱した場合にガラス状の硬い状態からゴム状に変わる温度を意味し、各基板を構成する熱可塑性樹脂の具体的なガラス転移温度の値は、特に限定されるものではないが、たとえば化学便覧（改訂版 化学便覧 基礎編 日本化学会 丸善（株））のような公知文献に記載されたものを採用してもよく、あるいは使用する熱可塑性樹脂の入手先から提供される数値を採用してもよい。後者の場合には、使用する熱可塑性樹脂の具体的な種類、メーカーおよび品番等が特定されているため、より特定的なガラス転移温度の値を得ることができる。なお、化学便覧（改訂版 化学便覧 基礎編 日本化学会 丸善（株））を参照すれば、たとえばポリカーボネート（ＰＣ）、ポリエチレンテレフタレート（ＰＥＴ）、ポリスチレン（ＰＳ）、アクリル樹脂（ＰＭＭＡ：ポリメタクリル酸メチル）のガラス転移温度は、それぞれ１５０℃、７３℃、１００〜１０５℃、８０〜１０５℃である。   Here, the “glass transition temperature” in the present specification means a temperature at which a glassy hard state changes to a rubbery state when the thermoplastic resin is heated, and is a specific example of the thermoplastic resin constituting each substrate. The value of the glass transition temperature is not particularly limited, but for example, those described in publicly known documents such as the chemical handbook (revised chemical handbook basic edition Nippon Chemical Society Maruzen Co., Ltd.) may be adopted. Alternatively, a numerical value provided from the source of the thermoplastic resin to be used may be adopted. In the latter case, since the specific type, manufacturer and product number of the thermoplastic resin to be used are specified, a more specific value of the glass transition temperature can be obtained. In addition, referring to the chemical handbook (revised chemical handbook basic edition, Chemical Society of Japan Maruzen Co., Ltd.), for example, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene (PS), acrylic resin (PMMA: polymethyl methacrylate) ) Are 150 ° C., 73 ° C., 100-105 ° C., and 80-105 ° C., respectively.

また、本明細書において「ガラス転移温度近傍」とは、具体的には、ガラス転移温度（またはガラス転移温度範囲の中心温度）±１０℃程度の温度範囲であり、より好ましくはガラス転移温度（またはガラス転移温度範囲の中心温度）±５℃程度の温度範囲である。さらに好ましくは、第２の基板の貼り合わせ面１０２ａの温度は、ガラス転移温度近傍であって、ガラス転移温度（またはガラス転移温度範囲の中心温度）以下の温度に調整される。第２の基板の貼り合わせ面１０２ａの温度を、ガラス転移温度（またはガラス転移温度範囲の中心温度）より高い温度とした場合、当該貼り合わせ面だけでなく、基板内部まで柔らかくなり、基板自体が変形する可能性がある。なお、本実施形態のように、熱板を用いて第２の基板を加熱する場合、第２の基板全体が熱変形する程度の温度まで加熱しないように留意すべきである。   In the present specification, “near the glass transition temperature” specifically refers to a glass transition temperature (or a central temperature of the glass transition temperature range) of about ± 10 ° C., more preferably the glass transition temperature ( Or the center temperature of the glass transition temperature range). More preferably, the temperature of the bonding surface 102a of the second substrate is adjusted to a temperature in the vicinity of the glass transition temperature and below the glass transition temperature (or the center temperature of the glass transition temperature range). When the temperature of the bonding surface 102a of the second substrate is higher than the glass transition temperature (or the center temperature in the glass transition temperature range), not only the bonding surface but also the inside of the substrate is softened, and the substrate itself is There is a possibility of deformation. Note that when the second substrate is heated using a hot plate as in this embodiment, care should be taken not to heat the second substrate to a temperature at which the entire second substrate is thermally deformed.

本実施形態では、第２の基板の貼り合わせ面１０２ａをガラス転移温度近傍まで加熱するための手段として熱板（ホットプレート）による加熱を用いているが、従来公知の他の加熱手段を適用することも可能である。ただし、以下の理由から、当該予備加熱には熱板（ホットプレート）による加熱を用いることが好ましい。従来公知の加熱手段として、レーザ光等の光照射による加熱方法を挙げることができるが、レーザ光を第２の基板の貼り合わせ面に照射する場合、レーザ光による加熱は急激であり、貼り合わせ面における熱分布が局所的になるために、貼り合わせ面の荒れ（表面凹凸）が大きくなる傾向にある。また、レーザ光による加熱の場合、貼り合わせ面上に発生した熱は、四方に拡散するため、貼り合わせ面の温度をガラス転移温度近傍の温度にするためには、貼り合わせ面を過剰に加熱する必要が生じる。このこともまた、貼り合わせ面の荒れを大きくする要因になるとともに、後述するように、第２の基板ではなく、第１の基板の貼り合わせ面をガラス転移温度近傍まで加熱する場合には、第１の基板の凹部パターンの変形を招くおそれがある。一方、熱板（ホットプレート）による加熱の場合には、第２の基板全体を均一に加熱することができ、過剰な熱を供給することがないため、上記光照射による加熱の場合に問題となる、貼り合わせ面の荒れ等は大幅に抑制される。   In this embodiment, heating by a hot plate (hot plate) is used as means for heating the bonding surface 102a of the second substrate to near the glass transition temperature, but other conventionally known heating means are applied. It is also possible. However, for the following reasons, it is preferable to use heating by a hot plate (hot plate) for the preliminary heating. As a conventionally known heating means, there can be mentioned a heating method by irradiation with light such as laser light. However, when laser light is applied to the bonding surface of the second substrate, heating by the laser light is abrupt and bonding is performed. Since the heat distribution on the surface becomes local, the roughness (surface unevenness) of the bonded surface tends to increase. In addition, in the case of heating with laser light, the heat generated on the bonding surface diffuses in all directions. Therefore, in order to bring the temperature of the bonding surface to a temperature near the glass transition temperature, the bonding surface is heated excessively. Need to do. This also increases the roughness of the bonding surface and, as will be described later, when heating the bonding surface of the first substrate to the vicinity of the glass transition temperature instead of the second substrate, There is a possibility that the concave pattern of the first substrate is deformed. On the other hand, in the case of heating by a hot plate (hot plate), the entire second substrate can be heated uniformly, and excessive heat is not supplied. The roughness of the bonded surface is greatly suppressed.

また、本実施形態では、熱板１０４上に第２の基板１０２を載置し、その貼り合わせ面１０２ａをガラス転移温度近傍まで加熱するものであるが、このような方法によれば、たとえば貼り合わせ面側を直接加熱する場合と比較して、比較的簡便に基板の加熱を行なうことができる。すなわち、貼り合わせ面の反対側の面から加熱を行なうことにより、加熱が完了した後、そのまま貼り合わせ面に他の基板を重ね合わせることができる。ここで、当該加熱方法の場合、熱板上に載置された基板全体が加熱されることになるが、本発明においては、基板の貼り合わせ面の温度はガラス転移温度近傍に設定されるため、基板全体が熱変形することは回避されている。   Further, in this embodiment, the second substrate 102 is placed on the hot plate 104 and the bonding surface 102a is heated to near the glass transition temperature. Compared with the case where the mating surfaces are directly heated, the substrate can be heated relatively easily. That is, by heating from the surface opposite to the bonding surface, after the heating is completed, another substrate can be directly superimposed on the bonding surface. Here, in the case of the heating method, the entire substrate placed on the hot plate is heated, but in the present invention, the temperature of the bonding surface of the substrates is set near the glass transition temperature. The entire substrate is prevented from being thermally deformed.

続く工程において、第２の基板の貼り合わせ面１０２ａ上に、第１の基板１０１を重ね合わせた後、第１の基板１０１上に石英ガラス１０３を置き、当該石英ガラス１０３を介して、両基板に圧力を印加する（工程（Ｂ）、図１（ｂ））。ここで、第１の基板１０１を第２の基板１０２上に重ね合わせるタイミングは、特に制限されず、たとえば第２の基板１０２の貼り合わせ面の温度がガラス転移温度近傍に達した後であってもよく、あるいは第２の基板の貼り合わせ面１０２ａの温度がガラス転移温度近傍に達する前に第１の基板１０１を重ねるようにしてもよい。後者の場合、第１の基板１０１と第２の基板１０２とが同じ熱可塑性樹脂から構成されていれば、第１の基板１０１の貼り合わせ面と第２の基板の貼り合わせ面１０２ａとは、およそ同時にガラス転移温度近傍に到達することとなる。   In the subsequent process, after the first substrate 101 is overlaid on the bonding surface 102 a of the second substrate, the quartz glass 103 is placed on the first substrate 101, and both substrates are interposed via the quartz glass 103. A pressure is applied to (step (B), FIG. 1B). Here, the timing at which the first substrate 101 is superimposed on the second substrate 102 is not particularly limited, for example, after the temperature of the bonding surface of the second substrate 102 has reached the vicinity of the glass transition temperature. Alternatively, the first substrate 101 may be overlapped before the temperature of the bonding surface 102a of the second substrate reaches the vicinity of the glass transition temperature. In the latter case, if the first substrate 101 and the second substrate 102 are made of the same thermoplastic resin, the bonding surface of the first substrate 101 and the bonding surface 102a of the second substrate are: At the same time, the vicinity of the glass transition temperature is reached.

印加する圧力は、第１の基板１０１および第２の基板１０２の材質等により異なり、第１の基板１０１と第２の基板１０２とを間隙なく密着させることができるように適宜選択される。本実施形態では、上記工程（Ａ）において、基板の貼り合わせ面をガラス転移温度近傍に調整しているため、大きな圧力を印加することなく、基板の密着性を向上させることができる。たとえば、レーザ光のみによって溶着を行なう従来例と比較すると、印加する圧力をおよそ半減させることが可能である。さらには、レーザ光のみによる溶着では、密着性を改善するために印加する圧力を大きくしたり、大きな光エネルギーを加える必要があり、このために基板に流路パターンが形成されている場合には、当該流路パターンの変形が問題であったが、本実施形態によれば、印加する圧力を低減できるため、このような問題は大幅に抑制される。   The pressure to be applied varies depending on the material of the first substrate 101 and the second substrate 102, and is appropriately selected so that the first substrate 101 and the second substrate 102 can be in close contact with each other without a gap. In the present embodiment, since the bonding surface of the substrates is adjusted in the vicinity of the glass transition temperature in the step (A), the adhesion of the substrates can be improved without applying a large pressure. For example, compared with the conventional example in which welding is performed only by laser light, the applied pressure can be halved. Furthermore, in welding with only laser light, it is necessary to increase the applied pressure or to apply large light energy in order to improve adhesion. For this reason, when a flow path pattern is formed on the substrate Although the deformation of the flow path pattern has been a problem, according to the present embodiment, since the applied pressure can be reduced, such a problem is greatly suppressed.

次に、石英ガラス１０３および第１の基板１０１を介して、第２の基板の貼り合わせ面１０２ａに分散されている光吸収物質に対して光１０５を照射して、光吸収物質を発熱させ、第２の基板の貼り合わせ面１０２ａおよび／または第１の基板１０１の貼り合わせ面を融解させることにより、第１の基板１０１と第２の基板１０２とを溶着する（工程（Ｃ）、図１（ｃ））。第１の基板１０１と第２の基板１０２とが、同程度の融点を有する熱可塑性樹脂から構成される場合には、光照射により、第１の基板１０１の貼り合わせ面および第２の基板の貼り合わせ面１０２ａの双方が融解する。   Next, the light absorbing material dispersed on the bonding surface 102a of the second substrate is irradiated with the light 105 through the quartz glass 103 and the first substrate 101, and the light absorbing material is heated. The first substrate 101 and the second substrate 102 are welded by melting the bonding surface 102a of the second substrate and / or the bonding surface of the first substrate 101 (step (C), FIG. 1). (C)). In the case where the first substrate 101 and the second substrate 102 are made of a thermoplastic resin having the same melting point, the bonded surface of the first substrate 101 and the second substrate are irradiated by light irradiation. Both the bonding surfaces 102a melt.

照射する光は、カーボンブラック等の光吸収物質が光を吸収して、比較的効率よく貼り合わせ面を加熱できるものであれば特に限定されず、たとえば、波長０．８〜１μｍ程度、パワー１０〜３００Ｗ程度のレーザ光を用いることができる。   Irradiation light is not particularly limited as long as a light absorbing material such as carbon black absorbs light and can heat the bonded surface relatively efficiently. For example, the wavelength is about 0.8 to 1 μm, and the power is 10 A laser beam of about 300 W can be used.

本実施形態においては、上記工程（Ａ）において、貼り合わせ面の温度をガラス転移温度近傍まで上げているので、貼り合わせ面の温度を融点まで上げるのに必要な光エネルギーは、レーザ光のみによる溶着と比較して少なくて済む。   In the present embodiment, in the step (A), the temperature of the bonding surface is raised to the vicinity of the glass transition temperature, so that the light energy required to raise the temperature of the bonding surface to the melting point is solely due to the laser beam. Less than welding.

（変形例）
上記第１の実施形態では、工程（Ａ）における第２の基板１０２の加熱を熱板１０４上で行ない、その後、第２の基板１０２を熱板１０４上に載置したまま、第１の基板１０１を重ねるが、本発明はこの態様に限定されるものではない。たとえば、第２の基板１０２を熱板１０４とは異なる熱板（ホットプレート）を用いて加熱した後、加熱された第２の基板１０２を熱板１０４上に移動し、この上に第１の基板１０１を重ねるようにしてもよい。この場合、熱板１０４は加熱しておく必要はない。また、熱板１０４上に第２の基板１０２を載置し、この上に熱板１０４とは異なる熱板（ホットプレート）を用いて加熱しておいた第１の基板１０１を重ねるようにしてもよい。この場合も熱板１０４は加熱しておく必要はない。 (Modification)
In the first embodiment, the heating of the second substrate 102 in the step (A) is performed on the hot plate 104, and then the first substrate is placed on the hot plate 104. However, the present invention is not limited to this embodiment. For example, after the second substrate 102 is heated using a hot plate (hot plate) different from the hot plate 104, the heated second substrate 102 is moved onto the hot plate 104, and the first substrate 102 is moved on the first plate 102. The substrates 101 may be stacked. In this case, the hot plate 104 does not need to be heated. In addition, the second substrate 102 is placed on the hot plate 104, and the first substrate 101 heated by using a hot plate (hot plate) different from the hot plate 104 is stacked thereon. Also good. Also in this case, the heating plate 104 does not need to be heated.

以上のように、本発明の基板の貼り合わせ方法およびマイクロチップの製造方法の特徴の１つは、第１の基板と第２の基板とを重ね合わせる前に、少なくともいずれかの基板の貼り合わせ面をガラス転移温度近傍まで予備加熱することにある。当該予備加熱を行なうことにより、わずかな圧力で基板間の間隙が消え、基板間の密着性を向上させることができる。印加圧力の低減は、基板に形成された流路パターンの変形の抑制または解消をもたらす。また、当該予備加熱を行なうことにより、貼り合わせ面の温度を融点まで上げるのに必要な光エネルギーを少なくすることができる。これにより、光照射時間を短くすることができるため、基板接合やマイクロチップ製造の生産性が向上し、プロセスコストはおよそ光の照射時間に比例することから、大幅なコストダウンを図ることができる。光照射時間の短縮化は、基板に形成された流路パターンの変形を抑制することにもつながる。さらに、光照射による加熱は通常急激であるため、照射面は荒れる、すなわち凹凸状となる傾向にあるが、光照射時間の短縮化は、このような照射面の粗面化を抑制する。このことは、マイクロチップの製造においては、マイクロチップ内部の流体回路内壁の粗面化を抑制できることを意味する。   As described above, one of the features of the substrate bonding method and the microchip manufacturing method of the present invention is that at least one of the substrates is bonded before the first substrate and the second substrate are overlaid. The purpose is to preheat the surface to near the glass transition temperature. By performing the preliminary heating, the gap between the substrates disappears with a slight pressure, and the adhesion between the substrates can be improved. Reduction of the applied pressure results in suppression or elimination of deformation of the flow path pattern formed on the substrate. Further, by performing the preliminary heating, it is possible to reduce the light energy necessary for raising the temperature of the bonding surface to the melting point. As a result, the light irradiation time can be shortened, the productivity of substrate bonding and microchip manufacturing is improved, and the process cost is approximately proportional to the light irradiation time, so that a significant cost reduction can be achieved. . The shortening of the light irradiation time also leads to suppressing the deformation of the flow path pattern formed on the substrate. Furthermore, since heating by light irradiation is usually rapid, the irradiated surface tends to be rough, that is, uneven, but shortening the light irradiation time suppresses such roughening of the irradiated surface. This means that the roughening of the inner wall of the fluid circuit inside the microchip can be suppressed in the manufacture of the microchip.

また、予備加熱を熱板を用いて行なえば、基板全体を均一に加熱することができ、過剰な熱を供給することがないため、光照射による加熱の場合に問題となる、貼り合わせ面の荒れ等をさらに抑制することができる。   In addition, if preheating is performed using a hot plate, the entire substrate can be heated uniformly, and excessive heat is not supplied. Therefore, there is a problem in the case of heating by light irradiation. Roughness and the like can be further suppressed.

＜マイクロチップ＞
本発明のマイクロチップは、好適には上記製造方法を用いて製造される。すなわち、本発明のマイクロチップは、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも上記第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせてなる。そして、第１の基板と第２の基板とは、上記工程（Ａ）〜（Ｃ）を経て貼り合わされている。 <Microchip>
The microchip of the present invention is preferably manufactured using the above manufacturing method. That is, in the microchip of the present invention, a concave portion for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light, and at least the first substrate. The light absorbing material is dispersed on the surface to be bonded to the substrate, and the second substrate made of a thermoplastic resin is bonded. And the 1st board | substrate and the 2nd board | substrate are bonded together through the said process (A)-(C).

図２は、本発明のマイクロチップの一例を示す概略断面図である。図２に示されるマイクロチップ２００は、貼り合わせ面に流体回路を構成するための凹部を有する第１の基板２０１と、光吸収物質が分散された第２の基板２０２とを貼り合わせた構造を有している。また、マイクロチップ２００はその内部に、たとえば流路等の流体回路２０６を有し、該流体回路２０６の内壁は、第１の基板２０１が有する凹部と、第２の基板２０２の貼り合わせ面とにより構成されている。   FIG. 2 is a schematic sectional view showing an example of the microchip of the present invention. A microchip 200 shown in FIG. 2 has a structure in which a first substrate 201 having a concave portion for forming a fluid circuit on a bonding surface and a second substrate 202 in which a light absorbing material is dispersed are bonded to each other. Have. In addition, the microchip 200 has a fluid circuit 206 such as a flow path therein, and the inner wall of the fluid circuit 206 includes a concave portion of the first substrate 201 and a bonding surface of the second substrate 202. It is comprised by.

本発明のマイクロチップの製造方法により得られるマイクロチップは、上述のように、第２の基板２０２の貼り合わせ面の荒れ（表面の凹凸）が低減されており、このことは、流体回路２０６の内壁のうち、第２の基板２０２の貼り合わせ面によって形成された壁面２０２ｂの荒れが低減されていることを意味する。具体的には、本発明のマイクロチップの製造方法により得られるマイクロチップにおける流体回路の内部壁面のうち、第２の基板の貼り合わせ面によって形成された壁面の表面粗さは、５０μｍ未満である。本発明によれば、当該表面粗さが、２０μｍ以下、さらには１０μｍ以下であるマイクロチップを提供することも可能である。ここで、表面粗さは、マイクロチップ６サンプルについて、第２の基板の貼り合わせ面によって形成された壁面内の任意の５点での表面粗さ（トータル６×５＝３０点）を、次のような測定方法、条件で測定したときの当該３０点の平均値である。
測定装置：レーザ顕微鏡 ＶＫ８５００ キーエンス社製。
測定条件：６５８ｎｍの光を壁面にスキャンして測定した。 As described above, the roughness of the bonding surface of the second substrate 202 (surface irregularities) is reduced in the microchip obtained by the microchip manufacturing method of the present invention. It means that the roughness of the wall surface 202b formed by the bonding surface of the second substrate 202 in the inner wall is reduced. Specifically, among the inner wall surfaces of the fluid circuit in the microchip obtained by the microchip manufacturing method of the present invention, the surface roughness of the wall surface formed by the bonding surface of the second substrate is less than 50 μm. . According to the present invention, it is also possible to provide a microchip having a surface roughness of 20 μm or less, further 10 μm or less. Here, the surface roughness of the microchip 6 sample is the following surface roughness (total 6 × 5 = 30 points) at any five points in the wall surface formed by the bonding surface of the second substrate. It is an average value of the 30 points when measured under the measurement method and conditions.
Measuring device: Laser microscope VK8500, manufactured by Keyence Corporation.
Measurement conditions: Measurement was carried out by scanning the wall with 658 nm light.

このように、本発明のマイクロチップにおいては、流体回路内壁の表面粗さが改善されている。マイクロチップにおいて、流路面がスムーズであることのメリットは大きく、流体回路内壁の表面荒れが抑制されることにより、流体回路内を流れる流体の制御を高精度に行なうことが可能となる。   Thus, in the microchip of the present invention, the surface roughness of the inner wall of the fluid circuit is improved. In the microchip, the merit of the smooth flow path is great, and the surface roughness of the inner wall of the fluid circuit is suppressed, so that the fluid flowing in the fluid circuit can be controlled with high accuracy.

以下、実施例を挙げて本発明をより詳細に説明するが、本発明はこれらに限定されるものではない。   EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited to these.

＜実施例１＞
図１を参照して、２０ｍｍ角で厚さ３ｍｍのポリメタクリル酸メチル（ＰＭＭＡ）基板の表面に流路となる凹部を掘り込んだ光透過性の第１の基板１０１を射出成型によって作製した。凹部の幅は狭いところで１００μｍ程度とし、深さは１００μｍ程度とした。次に、カーボンブラック（粒子径約２０ｎｍ）を基板全体に分散した２０ｍｍ角で厚さ１ｍｍのＰＭＭＡからなる光吸収性の第２の基板１０２を押切加工によって作製した。ついで、熱板１０４の温度を７５℃（ＰＭＭＡのガラス転移温度は８０℃である）とした後、当該熱板１０４上に第２の基板１０２を置いた（図１（ａ））。ついで、第２の基板の貼り合わせ面１０２ａの温度が７５℃になったのを確認した後、貼り合わせ面１０２ａ上に第１の基板１０１を重ねた。次に、石英ガラス１０３を第１の基板１０１上に載置し、当該石英ガラス１０３を介して０．２ＭＰａの圧力で両基板に圧力を印加して、第１の基板１０１および第２の基板１０２を密着させた（図１（ｂ））。次に、石英ガラス１０３の上から波長９００μｍ、パワー５０Ｗの光１０５（レーザ光）を第２の基板の貼り合わせ面１０２ａに照射した（図１（ｃ））。光１０５のスポットサイズの直径は５ｍｍであり、スキャンスピード６０ｍｍ／ｓで貼り合わせ面１０２ａ全体に照射した。光１０５によって貼り合わせ面１０２ａの温度がＰＭＭＡの融点である１４０℃以上になったところで第１の基板１０１および第２の基板１０２が融解して接着した。 <Example 1>
Referring to FIG. 1, a light-transmitting first substrate 101 in which a recess serving as a flow path was dug in the surface of a 20 mm square and 3 mm thick polymethyl methacrylate (PMMA) substrate was produced by injection molding. The concave portion has a narrow width of about 100 μm and a depth of about 100 μm. Next, a light-absorbing second substrate 102 made of PMMA having a thickness of 20 mm square and a thickness of 1 mm in which carbon black (particle diameter of about 20 nm) was dispersed over the entire substrate was produced by pressing. Next, after the temperature of the hot plate 104 was set to 75 ° C. (PMMA has a glass transition temperature of 80 ° C.), the second substrate 102 was placed on the hot plate 104 (FIG. 1A). Next, after confirming that the temperature of the bonding surface 102a of the second substrate reached 75 ° C., the first substrate 101 was stacked on the bonding surface 102a. Next, the quartz glass 103 is placed on the first substrate 101, and pressure is applied to both substrates through the quartz glass 103 at a pressure of 0.2 MPa, so that the first substrate 101 and the second substrate are applied. 102 was brought into close contact (FIG. 1B). Next, light 105 (laser light) having a wavelength of 900 μm and a power of 50 W was irradiated on the bonding surface 102a of the second substrate from above the quartz glass 103 (FIG. 1C). The diameter of the spot size of the light 105 was 5 mm, and the entire bonding surface 102a was irradiated at a scanning speed of 60 mm / s. The first substrate 101 and the second substrate 102 were melted and bonded when the temperature of the bonding surface 102a reached 140 ° C., which is the melting point of PMMA, by the light 105.

＜実施例２＞
図１を参照して、２０ｍｍ角で厚さ３ｍｍのポリメタクリル酸メチル（ＰＭＭＡ）基板の表面に流路となる凹部を掘り込んだ光透過性の第１の基板１０１を射出成型によって作製した。凹部の幅は狭いところで１００μｍ程度とし、深さは１００μｍ程度とした。次に、カーボンブラック（粒子径約２０ｎｍ）を基板全体に分散した２０ｍｍ角で厚さ１ｍｍのＰＭＭＡからなる光吸収性の第２の基板１０２を押切加工によって作製した。ついで、第２の基板１０２を熱板（ホットプレート）を用いて、７５℃で３０秒間加熱し、第２の基板１０２の温度を７５℃とした。次に、熱板１０４上に第２の基板１０２を置いた後（図１（ａ））、貼り合わせ面１０２ａ上に第１の基板１０１を重ねた。この際、熱板１０４の温度は特に制御しておらず、室温とした。次に、石英ガラス１０３を第１の基板１０１上に載置し、当該石英ガラス１０３を介して０．２ＭＰａの圧力で両基板に圧力を印加して、第１の基板１０１および第２の基板１０２を密着させた（図１（ｂ））。次に、石英ガラス１０３の上から波長９００μｍ、パワー５０Ｗの光１０５（レーザ光）を第２の基板の貼り合わせ面１０２ａに照射した（図１（ｃ））。光１０５のスポットサイズの直径は５ｍｍであり、スキャンスピード６０ｍｍ／ｓで貼り合わせ面１０２ａ全体に照射した。光１０５によって貼り合わせ面１０２ａの温度がＰＭＭＡの融点である１４０℃以上になったところで第１の基板１０１および第２の基板１０２が融解して接着した。得られたマイクロチップにおける流体回路の内部壁面のうち、第２の基板の貼り合わせ面によって形成された壁面の表面粗さを上記方法により測定したところ、８．５±１．８μｍであった。該表面の凹凸の最大値（凹部底面から凸部頂点までの距離の最大値）は１８μｍであった。 <Example 2>
Referring to FIG. 1, a light-transmitting first substrate 101 in which a recess serving as a flow path was dug in the surface of a 20 mm square and 3 mm thick polymethyl methacrylate (PMMA) substrate was produced by injection molding. The concave portion has a narrow width of about 100 μm and a depth of about 100 μm. Next, a light-absorbing second substrate 102 made of PMMA having a thickness of 20 mm square and a thickness of 1 mm in which carbon black (particle diameter of about 20 nm) was dispersed over the entire substrate was produced by pressing. Next, the second substrate 102 was heated at 75 ° C. for 30 seconds using a hot plate (hot plate), and the temperature of the second substrate 102 was set to 75 ° C. Next, after placing the second substrate 102 on the hot plate 104 (FIG. 1A), the first substrate 101 was overlaid on the bonding surface 102a. At this time, the temperature of the hot plate 104 was not particularly controlled and was set to room temperature. Next, the quartz glass 103 is placed on the first substrate 101, and pressure is applied to both substrates through the quartz glass 103 at a pressure of 0.2 MPa, so that the first substrate 101 and the second substrate are applied. 102 was brought into close contact (FIG. 1B). Next, light 105 (laser light) having a wavelength of 900 μm and a power of 50 W was irradiated on the bonding surface 102a of the second substrate from above the quartz glass 103 (FIG. 1C). The diameter of the spot size of the light 105 was 5 mm, and the entire bonding surface 102a was irradiated at a scanning speed of 60 mm / s. The first substrate 101 and the second substrate 102 were melted and bonded when the temperature of the bonding surface 102a reached 140 ° C., which is the melting point of PMMA, by the light 105. Of the internal wall surfaces of the fluid circuit in the obtained microchip, the surface roughness of the wall surface formed by the bonding surface of the second substrate was measured by the above method, and found to be 8.5 ± 1.8 μm. The maximum value of the unevenness on the surface (maximum value of the distance from the bottom surface of the concave portion to the vertex of the convex portion) was 18 μm.

＜比較例１＞
熱板１０４を用いた予備加熱を行なうことなく、レーザ光の照射のみで第１の基板１０１および第２の基板１０２を貼り合わせたこと以外は、実施例１と同様にしてマイクロチップを作製した。その結果、実施例１と同等の密着性を得るためには、印加圧力を０．５ＭＰａとし、かつレーザ光のスキャンスピードを２０ｍｍ／ｓとする必要があることが確認された。また、得られたマイクロチップにおける流体回路の内部壁面のうち、第２の基板の貼り合わせ面によって形成された壁面の表面粗さを測定したところ、５０μｍ〜８０μｍであった。 <Comparative Example 1>
A microchip was manufactured in the same manner as in Example 1 except that the first substrate 101 and the second substrate 102 were bonded together only by laser beam irradiation without performing preheating using the hot plate 104. . As a result, it was confirmed that in order to obtain the adhesiveness equivalent to that in Example 1, it is necessary to set the applied pressure to 0.5 MPa and the laser beam scanning speed to 20 mm / s. Moreover, when the surface roughness of the wall surface formed by the bonding surface of the 2nd board | substrate was measured among the internal wall surfaces of the fluid circuit in the obtained microchip, they were 50 micrometers-80 micrometers.

今回開示された実施の形態および実施例はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。   It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

本発明のマイクロチップの製造方法の第１の実施形態を示す概略工程図である。It is a schematic process drawing which shows 1st Embodiment of the manufacturing method of the microchip of this invention. 本発明のマイクロチップの一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the microchip of this invention.

符号の説明Explanation of symbols

１０１，２０１ 第１の基板、１０２，２０２ 第２の基板、１０２ａ 第２の基板の貼り合わせ面、１０３ 石英ガラス、１０４ 熱板、１０５ 光、２００ マイクロチップ、２０２ｂ 第２の基板の貼り合わせ面によって形成された流体回路壁面、２０６ 流体回路。   101, 201 First substrate, 102, 202 Second substrate, 102a Bonding surface of second substrate, 103 Quartz glass, 104 Heat plate, 105 Light, 200 Microchip, 202b Bonding surface of second substrate Fluid circuit wall surface formed by 206, Fluid circuit.

Claims (5)

光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも前記第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせる方法であって、以下の工程（Ａ）〜（Ｃ）を含む、基板の貼り合わせ方法。
（Ａ）前記第１の基板および前記第２の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程、
（Ｂ）前記第１の基板および前記第２の基板を重ね合わせて、圧力を印加する工程、
（Ｃ）前記第１の基板を介して、前記光吸収物質に対して光を照射する工程。 In this method, a first substrate made of a thermoplastic resin that transmits light and a second substrate made of a thermoplastic resin in which a light-absorbing substance is dispersed on at least a bonding surface of the first substrate. And the bonding method of a board | substrate including the following processes (A)-(C).
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate to the vicinity of the glass transition temperature of a thermoplastic resin constituting the substrate;
(B) applying the pressure by superimposing the first substrate and the second substrate;
(C) A step of irradiating light to the light-absorbing substance through the first substrate. 前記工程（Ａ）における温度調整は、熱板を用いて行なわれる、請求項１に記載の基板の貼り合わせ方法。   The substrate bonding method according to claim 1, wherein the temperature adjustment in the step (A) is performed using a hot plate. 貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも前記第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップの製造方法であって、以下の工程（Ａ）〜（Ｃ）を含む、マイクロチップの製造方法。
（Ａ）前記第１の基板および前記第２の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程、
（Ｂ）前記第１の基板および前記第２の基板を重ね合わせて、圧力を印加する工程、
（Ｃ）前記第１の基板を介して、前記光吸収物質に対して光を照射する工程。 A recess for forming a fluid circuit is formed on at least a part of the bonding surface, and light is applied to the bonding surface between the first substrate made of a thermoplastic resin that transmits light and at least the first substrate. A manufacturing method of a microchip having a fluid circuit therein, in which an absorbent material is dispersed and bonded to a second substrate made of a thermoplastic resin, including the following steps (A) to (C): Microchip manufacturing method.
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate to the vicinity of the glass transition temperature of a thermoplastic resin constituting the substrate;
(B) applying the pressure by superimposing the first substrate and the second substrate;
(C) A step of irradiating light to the light-absorbing substance through the first substrate. 貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも前記第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップであって、
前記第１の基板と前記第２の基板とは、少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整した後、両基板を重ね合わせて圧力を印加し、前記第１の基板を介して、前記光吸収物質に対して光を照射することにより貼り合わされているマイクロチップ。 A recess for forming a fluid circuit is formed on at least a part of the bonding surface, and light is applied to the bonding surface between the first substrate made of a thermoplastic resin that transmits light and at least the first substrate. A microchip having a fluid circuit therein, in which an absorbent material is dispersed and bonded to a second substrate made of a thermoplastic resin,
The first substrate and the second substrate are prepared by adjusting the temperature of the bonding surface of at least one substrate to the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate, and then superimposing the two substrates. A microchip bonded by applying pressure and irradiating light to the light-absorbing substance through the first substrate. 貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第１の基板と、少なくとも前記第１の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第２の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップであって、
前記流体回路の内部壁面のうち、前記第２の基板の貼り合わせ面によって形成された壁面の表面粗さが、５０μｍ未満である、マイクロチップ。 A recess for forming a fluid circuit is formed on at least a part of the bonding surface, and light is applied to the bonding surface between the first substrate made of a thermoplastic resin that transmits light and at least the first substrate. A microchip having a fluid circuit therein, in which an absorbent material is dispersed and bonded to a second substrate made of a thermoplastic resin,
The microchip whose surface roughness of the wall surface formed by the bonding surface of the said 2nd board | substrate is less than 50 micrometers among the inner wall surfaces of the said fluid circuit.
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KR20180004693A (en) * 2017-12-29 2018-01-12 한국기계연구원 Micro_channel device with fastener
KR101864556B1 (en) 2017-12-29 2018-06-05 한국기계연구원 Micro_channel device with fastener
KR101914395B1 (en) 2017-12-29 2018-11-01 한국기계연구원 Micro_channel device of locally pressurizing type

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