JP2008203186A - Substrate laminating method, manufacturing method of microchip, and the microchip - Google Patents
Substrate laminating method, manufacturing method of microchip, and the microchip Download PDFInfo
- Publication number
- JP2008203186A JP2008203186A JP2007042182A JP2007042182A JP2008203186A JP 2008203186 A JP2008203186 A JP 2008203186A JP 2007042182 A JP2007042182 A JP 2007042182A JP 2007042182 A JP2007042182 A JP 2007042182A JP 2008203186 A JP2008203186 A JP 2008203186A
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- substrate
- light
- bonding surface
- microchip
- thermoplastic resin
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Abstract
Description
本発明は、基板の貼り合わせ方法、マイクロチップの製造方法およびマイクロチップに関する。 The present invention relates to a substrate bonding method, a microchip manufacturing method, and a microchip.
近年、医療や健康、食品、創薬などの分野で、DNA(Deoxyribo Nucleic Acid)や酵素、抗原、抗体、タンパク質、ウィルスおよび細胞などの生体物質、ならびに化学物質を検知、検出あるいは定量する重要性が増してきており、それらを簡便に測定できる様々なバイオチップおよびマイクロ化学チップ(以下、これらを総称してマイクロチップと称する。)が提案されている。 In recent years, the importance of detecting, detecting or quantifying biological substances such as DNA (Deoxyribo Nucleic Acid), enzymes, antigens, antibodies, proteins, viruses and cells, and chemical substances in fields such as medicine, health, food, and drug discovery There have been proposed various biochips and microchemical chips (hereinafter collectively referred to as microchips) that can be easily measured.
マイクロチップは、その内部に流体回路を有しており、該流体回路は、たとえば検査・分析の対象となるサンプル(たとえば、血液等)を処理する、あるいは該サンプルと反応させるための液体試薬を保持する液体試薬保持室、該サンプルと液体試薬とを混合する混合室、混合液について分析および/または検査するための検出部などの各部と、これら各部を適切に接続する微細な流路(数百μm程度の幅)とから主に構成される。このような流体回路を有するマイクロチップは、実験室で行なっている一連の実験・分析操作を、数cm角で厚さ数mm程度のチップ内で行なえることから、サンプルおよび試薬が微量で済み、コストが安く、反応速度が速く、ハイスループットな検査ができ、サンプルを採取した現場で直ちに検査結果を得ることができるなど多くの利点を有し、たとえば血液検査等の生化学検査用として好適に用いられている。 The microchip has a fluid circuit therein, and the fluid circuit processes, for example, a sample to be examined and analyzed (for example, blood) or a liquid reagent for reacting with the sample. Each part such as a liquid reagent holding chamber to be held, a mixing chamber for mixing the sample and the liquid reagent, a detection part for analyzing and / or inspecting the mixed liquid, and a fine flow path (several number) appropriately connecting these parts The width is about 100 μm). A microchip having such a fluid circuit can perform a series of experiments and analysis operations performed in a laboratory in a chip of several centimeters square and several millimeters in thickness. It has many advantages such as low cost, high reaction speed, high throughput testing, and the ability to obtain test results immediately at the site where the sample is taken, and is suitable for biochemical tests such as blood tests. It is used for.
ところで、マイクロチップは、通常、流体回路を構成する凹部(溝)が形成された基板と、平坦な基板とを貼り合せることにより作製される。従来、熱可塑性樹脂からなる2つの基板の貼り合わせには、光(たとえばレーザ光)照射による溶着が用いられてきた(たとえば特許文献1)。この光照射による溶着においては、2枚の熱可塑性樹脂基板のうち、一方を光透過性基板とし、他方を光吸収性基板として、この両者を重ね合わせて圧力を印加した後、透明基板側から光を照射する。光照射により、貼り合わせ面の温度が融点を超えると、基板が融解して両基板が接合される。
しかしながら、上記光照射による溶着には以下のような課題があった。すなわち、光透過性基板と光吸収性基板との貼り合わせ面に間隙があると光照射しても溶着しない。間隙をなくすために大きな圧力と大きな光エネルギーを印加すると、流体回路、特に微細な流路パターンの断面変形が大きくなる。また、光透過性基板および光吸収性基板の貼り合わせ面が融点に到達するには長時間の光照射が必要であり、生産性が悪い。 However, welding by the above light irradiation has the following problems. That is, if there is a gap on the bonding surface between the light-transmitting substrate and the light-absorbing substrate, welding does not occur even when light is irradiated. When a large pressure and a large light energy are applied to eliminate the gap, the cross-sectional deformation of the fluid circuit, particularly a fine flow path pattern, becomes large. In addition, light irradiation for a long time is required for the bonding surfaces of the light-transmitting substrate and the light-absorbing substrate to reach the melting point, and productivity is poor.
本発明は、上記課題を解決するためになされたものであって、その目的は、生産性がよく、基板に微細な流路パターンが形成されている場合であっても、該流路パターンの変形を生じない基板の貼り合わせ方法を提供することである。 The present invention has been made in order to solve the above-described problems, and the object of the present invention is to improve productivity, even when a fine flow path pattern is formed on a substrate. It is to provide a method for bonding substrates without causing deformation.
また、本発明の別の目的は、生産性がよく、微細な流路パターン等の流体回路の変形を生じないマイクロチップの製造方法および、2つの基板を貼り合わせてなるマイクロチップであって、流体回路の変形が抑制されているマイクロチップを提供することである。 Another object of the present invention is a microchip manufacturing method that is good in productivity and does not cause deformation of a fluid circuit such as a fine flow path pattern, and a microchip formed by bonding two substrates, To provide a microchip in which deformation of a fluid circuit is suppressed.
本発明者は、鋭意検討した結果、光照射による溶着の前に、貼り合わせる2つの基板のうち少なくとも1の基板の貼り合わせ面の温度を、その基板を構成する熱可塑性樹脂のガラス転移温度近傍に設定した後、当該2つの基板を重ね、圧力を印加して溶着を行なうことにより上記課題が解決されることを見出した。すなわち、本発明は以下のとおりである。 As a result of intensive studies, the inventor has determined that the temperature of the bonding surface of at least one of the two substrates to be bonded before the welding by light irradiation is close to the glass transition temperature of the thermoplastic resin constituting the substrate. It was found that the above-mentioned problem can be solved by superposing the two substrates and applying pressure to perform welding. That is, the present invention is as follows.
本発明は、光を透過する熱可塑性樹脂からなる第1の基板と、少なくとも第1の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第2の基板とを貼り合わせる方法であって、以下の(A)〜(C)の工程、
(A)第1の基板および第2の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程と、
(B)上記第1の基板および上記第2の基板を重ね合わせて、圧力を印加する工程と、
(C)上記第1の基板を介して、上記光吸収物質に対して光を照射する工程と、を含む基板の貼り合わせ方法を提供する。
According to the present invention, a first substrate made of a thermoplastic resin that transmits light is bonded to a second substrate made of a thermoplastic resin in which a light-absorbing substance is dispersed on at least a bonding surface of the first substrate. A method comprising the following steps (A) to (C):
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate in the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate;
(B) overlaying the first substrate and the second substrate and applying pressure;
(C) A step of irradiating the light-absorbing substance with light through the first substrate.
ここで、上記工程(A)における温度調整は、熱板を用いて行なわれることが好ましい。 Here, the temperature adjustment in the step (A) is preferably performed using a hot plate.
また、本発明は、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第1の基板と、少なくとも第1の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第2の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップの製造方法であって、以下の(A)〜(C)の工程、
(A)第1の基板および第2の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程と、
(B)上記第1の基板および上記第2の基板を重ね合わせて、圧力を印加する工程と、
(C)上記第1の基板を介して、上記光吸収物質に対して光を照射する工程と、を含むマイクロチップの製造方法を提供する。
In the present invention, a concave portion for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light, and at least the first substrate. A manufacturing method of a microchip having a fluid circuit inside, in which a light-absorbing material is dispersed on a bonding surface and bonded to a second substrate made of a thermoplastic resin, and includes the following (A) to (C ) Process,
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate in the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate;
(B) overlaying the first substrate and the second substrate and applying pressure;
(C) A method of manufacturing a microchip, comprising: irradiating the light absorbing material with light through the first substrate.
さらに本発明は、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第1の基板と、少なくとも第1の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第2の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップであって、上記第1の基板と上記第2の基板とは、少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整した後、両基板を重ね合わせて圧力を印加し、上記第1の基板を介して、上記光吸収物質に対して光を照射することにより貼り合わされているマイクロチップを提供する。 Further, according to the present invention, a recess for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light is bonded to at least the first substrate. A microchip having a fluid circuit inside, in which a light-absorbing material is dispersed on a mating surface and bonded to a second substrate made of a thermoplastic resin, the first substrate, the second substrate, After adjusting the temperature of the bonding surface of at least one of the substrates to the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate, the two substrates are superposed and pressure is applied to the substrate through the first substrate. And providing a microchip bonded by irradiating the light absorbing material with light.
また本発明は、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第1の基板と、少なくとも第1の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第2の基板とを貼り合わせてなる、内部に流体回路を有するマイクロチップであって、上記流体回路の内部壁面のうち、上記第2の基板の貼り合わせ面によって形成された壁面の表面粗さが、50μm未満である、マイクロチップを提供する。 According to the present invention, a recess for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light is bonded to at least the first substrate. A microchip having a fluid circuit inside, in which a light-absorbing substance is dispersed on a mating surface and bonded to a second substrate made of a thermoplastic resin, and the second of the inner wall surfaces of the fluid circuit. Provided is a microchip in which the surface roughness of the wall surface formed by the bonding surface of the substrate is less than 50 μm.
本発明の基板の貼り合わせ方法によれば、生産性よく、基板を貼り合せることができ、基板に微細な流路パターンが形成されている場合であっても、該流路パターンの変形を抑制することができる。 According to the substrate bonding method of the present invention, substrates can be bonded with high productivity, and even when a fine channel pattern is formed on the substrate, deformation of the channel pattern is suppressed. can do.
また、本発明のマイクロチップの製造方法によれば、生産性よく、マイクロチップを製造することができ、得られるマイクロチップは、微細な流路パターン等の流体回路の変形が従来と比較して大幅に抑制されている。特に、本発明のマイクロチップにおいては、光吸収物質が分散された第2の基板の貼り合わせ面が形成する流体回路の内部壁面の表面粗さが従来と比較して大幅に改善されている。 Moreover, according to the microchip manufacturing method of the present invention, a microchip can be manufactured with high productivity, and the resulting microchip has a fluid circuit deformation such as a fine flow path pattern as compared with the conventional one. It is greatly suppressed. In particular, in the microchip of the present invention, the surface roughness of the inner wall surface of the fluid circuit formed by the bonding surface of the second substrate in which the light-absorbing substance is dispersed is greatly improved as compared with the prior art.
<基板の貼り合わせ方法およびマイクロチップの製造方法>
本発明の基板の貼り合わせ方法は、光を透過する熱可塑性樹脂からなる第1の基板と、少なくとも第1の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第2の基板とを貼り合わせる方法であって、以下の(A)〜(C)の工程、
(A)第1の基板および第2の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程(以下、予備加熱工程ともいう)と、
(B)上記第1の基板および上記第2の基板を重ね合わせて、圧力を印加する工程と、
(C)上記第1の基板を介して、上記光吸収物質に対して光を照射する工程と、を含むことを特徴とする。本発明の基板の貼り合わせ方法によれば、生産性よく、熱可塑性樹脂からなる基板を貼り合わせることができ、基板に微細な流路パターンが形成されている場合であっても、該流路パターンの変形を抑制することができる。
<Substrate bonding method and microchip manufacturing method>
In the method for bonding substrates according to the present invention, a light-absorbing substance is dispersed on a bonding surface between a first substrate made of a thermoplastic resin that transmits light and at least the first substrate, and a second substrate made of a thermoplastic resin. A method of bonding the substrate to the following steps (A) to (C):
(A) A step of adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate to the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate (hereinafter referred to as a preheating step) Say)
(B) overlaying the first substrate and the second substrate and applying pressure;
(C) irradiating the light-absorbing substance with light through the first substrate. According to the method for laminating a substrate of the present invention, a substrate made of a thermoplastic resin can be bonded with good productivity, and even if a fine channel pattern is formed on the substrate, the channel Pattern deformation can be suppressed.
本発明の基板の貼り合わせ方法は、マイクロチップの製造に好適に用いることができる。すなわち、第1の基板として、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成された、光を透過する熱可塑性樹脂からなる基板を用い、当該第1の基板と、上記した第2の基板とを、上記方法により貼り合わせることによって、内部に流体回路を有するマイクロチップを製造することができる。当該方法により製造されたマイクロチップは、微細な流路パターン等の流体回路の変形が従来と比較して大幅に抑制されている。特に、光吸収物質が分散された第2の基板の貼り合わせ面が形成する流体回路の内部壁面の表面粗さが従来と比較して大幅に改善されている。 The substrate bonding method of the present invention can be suitably used for manufacturing a microchip. That is, as the first substrate, a substrate made of a thermoplastic resin that transmits light and in which a recess for forming a fluid circuit is formed on at least a part of the bonding surface, the first substrate, A microchip having a fluid circuit therein can be manufactured by bonding the second substrate to the second substrate by the above method. In the microchip manufactured by this method, deformation of the fluid circuit such as a fine flow path pattern is greatly suppressed as compared with the conventional one. In particular, the surface roughness of the inner wall surface of the fluid circuit formed by the bonding surface of the second substrate in which the light-absorbing substance is dispersed is greatly improved as compared with the prior art.
まず、本発明の基板の貼り合わせ方法およびマイクロチップの製造方法に用いられる基板について説明する。本発明においては、貼り合わせる一方の基板(第1の基板)には、光を透過する熱可塑性樹脂を用いる。このような熱可塑性樹脂としては、たとえばポリエチレンテレフタラート(PET)、ポリスチレン(PS)、ポリプロピレン(PP)、ABS樹脂(ABS)、ポリアセタール(POM)、ポリアミド(PA)、ポリカーボネート(PC)、ポリブチレンテレフタラート(PBT)、ポリメタクリル酸メチル(PMMA)等のアクリル系樹脂などを挙げることができる。第1の基板には、たとえばマイクロチップを製造する場合のように、貼り合わせ面の少なくとも一部に流体回路等を構成する凹部(溝)が施されていてもよい。 First, the substrate used in the method for bonding substrates and the method for manufacturing microchips of the present invention will be described. In the present invention, a thermoplastic resin that transmits light is used for one substrate (first substrate) to be bonded. Examples of such thermoplastic resins include polyethylene terephthalate (PET), polystyrene (PS), polypropylene (PP), ABS resin (ABS), polyacetal (POM), polyamide (PA), polycarbonate (PC), and polybutylene. Examples thereof include acrylic resins such as terephthalate (PBT) and polymethyl methacrylate (PMMA). The first substrate may be provided with a recess (groove) constituting a fluid circuit or the like on at least a part of the bonding surface as in the case of manufacturing a microchip, for example.
貼り合わせる他方の基板(第2の基板)もまた、熱可塑性樹脂からなり、具体例として上記したものを挙げることができる。第2の基板には、光を吸収して発熱する光吸収物質が分散されている。光吸収物質としては、たとえば色素を挙げることができ、その中でもカーボンブラックを好適に用いることができる。光吸収物質は、少なくとも第2の基板の貼り合わせ面上に分散されていればよい。たとえば、基板の貼り合わせ面側に光吸収物質が分散された層が形成された構成としてもよく、あるいは第2の基板全体に光吸収物質が分散されていてもよい。 The other substrate (second substrate) to be bonded is also made of a thermoplastic resin, and specific examples include those described above. A light absorbing material that absorbs light and generates heat is dispersed in the second substrate. Examples of the light absorbing substance include a dye, and among these, carbon black can be preferably used. The light absorbing material only needs to be dispersed on at least the bonding surface of the second substrate. For example, a structure in which a layer in which a light absorbing material is dispersed is formed on the bonding surface side of the substrate, or the light absorbing material may be dispersed throughout the second substrate.
ここで、第1の基板と第2の基板とは、同種の熱可塑性樹脂からなることが好ましい。両基板を同種の樹脂とすることにより、光照射によって両基板の貼り合わせ面が同時に融解するため、密着強度をより高くすることができる。また、両基板を同種の樹脂とすることにより、工程(B)において、第1の基板と第2の基板を重ね合わせ、圧力を印加した際、両基板の貼り合わせ面が柔軟性を示すため、溶着をより確実に行なうことができる。第1の基板と第2の基板とは、異種の熱可塑性樹脂からなっていてもよいが、その場合、それらのガラス転移温度および/または融点が近いことが好ましい。以下、実施の形態を示して本発明の基板の貼り合わせ方法およびマイクロチップの製造方法をより詳細に説明する。 Here, the first substrate and the second substrate are preferably made of the same kind of thermoplastic resin. By making both the substrates the same type of resin, the bonding surfaces of both the substrates are simultaneously melted by light irradiation, so that the adhesion strength can be further increased. In addition, since both substrates are made of the same kind of resin, when the first substrate and the second substrate are overlapped and pressure is applied in the step (B), the bonding surface of both substrates exhibits flexibility. , Welding can be performed more reliably. The first substrate and the second substrate may be made of different types of thermoplastic resins, but in that case, their glass transition temperature and / or melting point are preferably close. Hereinafter, the substrate bonding method and the microchip manufacturing method of the present invention will be described in more detail with reference to embodiments.
(第1の実施形態)
図1は、本発明のマイクロチップの製造方法の第1の実施形態を示す概略工程図であり、各段階における基板の断面図を示している。なお、以下に示すマイクロチップの製造方法に係る一実施形態は、本発明の基板の貼り合わせ方法の一実施形態でもあるが、本発明の基板の貼り合わせ方法においては、第1の基板は、必ずしもその貼り合わせ面に凹部を有している必要はない。
(First embodiment)
FIG. 1 is a schematic process diagram showing a first embodiment of a method of manufacturing a microchip according to the present invention, and shows cross-sectional views of a substrate at each stage. One embodiment of the microchip manufacturing method described below is also an embodiment of the substrate bonding method of the present invention. In the substrate bonding method of the present invention, the first substrate is: The bonding surface does not necessarily have a recess.
まず、図1(a)に示されるように、基板全体に光吸収物質が分散された第2の基板102を、所定の温度に加熱された熱板104上に載置することにより加熱し、少なくとも第1の基板101(図1(a)において図示せず)との貼り合わせ面102aの温度が、該第2の基板102を構成する熱可塑性樹脂のガラス転移温度近傍となるように調整する(工程(A))。貼り合わせ面102aの温度をガラス転移温度近傍とする予備加熱を行なうことにより、貼り合わせ面102aにおける樹脂の柔軟性が増すため、後の工程(工程(B))において、第1の基板101と重ね合わせ、圧力を印加する際、わずかな圧力で基板間の間隙をなくすことができるとともに、最終的な基板間の密着性を向上させることができる。
First, as shown in FIG. 1 (a), the
ここで、本明細書において「ガラス転移温度」とは、熱可塑性樹脂を加熱した場合にガラス状の硬い状態からゴム状に変わる温度を意味し、各基板を構成する熱可塑性樹脂の具体的なガラス転移温度の値は、特に限定されるものではないが、たとえば化学便覧(改訂版 化学便覧 基礎編 日本化学会 丸善(株))のような公知文献に記載されたものを採用してもよく、あるいは使用する熱可塑性樹脂の入手先から提供される数値を採用してもよい。後者の場合には、使用する熱可塑性樹脂の具体的な種類、メーカーおよび品番等が特定されているため、より特定的なガラス転移温度の値を得ることができる。なお、化学便覧(改訂版 化学便覧 基礎編 日本化学会 丸善(株))を参照すれば、たとえばポリカーボネート(PC)、ポリエチレンテレフタレート(PET)、ポリスチレン(PS)、アクリル樹脂(PMMA:ポリメタクリル酸メチル)のガラス転移温度は、それぞれ150℃、73℃、100〜105℃、80〜105℃である。 Here, the “glass transition temperature” in the present specification means a temperature at which a glassy hard state changes to a rubbery state when the thermoplastic resin is heated, and is a specific example of the thermoplastic resin constituting each substrate. The value of the glass transition temperature is not particularly limited, but for example, those described in publicly known documents such as the chemical handbook (revised chemical handbook basic edition Nippon Chemical Society Maruzen Co., Ltd.) may be adopted. Alternatively, a numerical value provided from the source of the thermoplastic resin to be used may be adopted. In the latter case, since the specific type, manufacturer and product number of the thermoplastic resin to be used are specified, a more specific value of the glass transition temperature can be obtained. In addition, referring to the chemical handbook (revised chemical handbook basic edition, Chemical Society of Japan Maruzen Co., Ltd.), for example, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene (PS), acrylic resin (PMMA: polymethyl methacrylate) ) Are 150 ° C., 73 ° C., 100-105 ° C., and 80-105 ° C., respectively.
また、本明細書において「ガラス転移温度近傍」とは、具体的には、ガラス転移温度(またはガラス転移温度範囲の中心温度)±10℃程度の温度範囲であり、より好ましくはガラス転移温度(またはガラス転移温度範囲の中心温度)±5℃程度の温度範囲である。さらに好ましくは、第2の基板の貼り合わせ面102aの温度は、ガラス転移温度近傍であって、ガラス転移温度(またはガラス転移温度範囲の中心温度)以下の温度に調整される。第2の基板の貼り合わせ面102aの温度を、ガラス転移温度(またはガラス転移温度範囲の中心温度)より高い温度とした場合、当該貼り合わせ面だけでなく、基板内部まで柔らかくなり、基板自体が変形する可能性がある。なお、本実施形態のように、熱板を用いて第2の基板を加熱する場合、第2の基板全体が熱変形する程度の温度まで加熱しないように留意すべきである。
In the present specification, “near the glass transition temperature” specifically refers to a glass transition temperature (or a central temperature of the glass transition temperature range) of about ± 10 ° C., more preferably the glass transition temperature ( Or the center temperature of the glass transition temperature range). More preferably, the temperature of the
本実施形態では、第2の基板の貼り合わせ面102aをガラス転移温度近傍まで加熱するための手段として熱板(ホットプレート)による加熱を用いているが、従来公知の他の加熱手段を適用することも可能である。ただし、以下の理由から、当該予備加熱には熱板(ホットプレート)による加熱を用いることが好ましい。従来公知の加熱手段として、レーザ光等の光照射による加熱方法を挙げることができるが、レーザ光を第2の基板の貼り合わせ面に照射する場合、レーザ光による加熱は急激であり、貼り合わせ面における熱分布が局所的になるために、貼り合わせ面の荒れ(表面凹凸)が大きくなる傾向にある。また、レーザ光による加熱の場合、貼り合わせ面上に発生した熱は、四方に拡散するため、貼り合わせ面の温度をガラス転移温度近傍の温度にするためには、貼り合わせ面を過剰に加熱する必要が生じる。このこともまた、貼り合わせ面の荒れを大きくする要因になるとともに、後述するように、第2の基板ではなく、第1の基板の貼り合わせ面をガラス転移温度近傍まで加熱する場合には、第1の基板の凹部パターンの変形を招くおそれがある。一方、熱板(ホットプレート)による加熱の場合には、第2の基板全体を均一に加熱することができ、過剰な熱を供給することがないため、上記光照射による加熱の場合に問題となる、貼り合わせ面の荒れ等は大幅に抑制される。
In this embodiment, heating by a hot plate (hot plate) is used as means for heating the
また、本実施形態では、熱板104上に第2の基板102を載置し、その貼り合わせ面102aをガラス転移温度近傍まで加熱するものであるが、このような方法によれば、たとえば貼り合わせ面側を直接加熱する場合と比較して、比較的簡便に基板の加熱を行なうことができる。すなわち、貼り合わせ面の反対側の面から加熱を行なうことにより、加熱が完了した後、そのまま貼り合わせ面に他の基板を重ね合わせることができる。ここで、当該加熱方法の場合、熱板上に載置された基板全体が加熱されることになるが、本発明においては、基板の貼り合わせ面の温度はガラス転移温度近傍に設定されるため、基板全体が熱変形することは回避されている。
Further, in this embodiment, the
続く工程において、第2の基板の貼り合わせ面102a上に、第1の基板101を重ね合わせた後、第1の基板101上に石英ガラス103を置き、当該石英ガラス103を介して、両基板に圧力を印加する(工程(B)、図1(b))。ここで、第1の基板101を第2の基板102上に重ね合わせるタイミングは、特に制限されず、たとえば第2の基板102の貼り合わせ面の温度がガラス転移温度近傍に達した後であってもよく、あるいは第2の基板の貼り合わせ面102aの温度がガラス転移温度近傍に達する前に第1の基板101を重ねるようにしてもよい。後者の場合、第1の基板101と第2の基板102とが同じ熱可塑性樹脂から構成されていれば、第1の基板101の貼り合わせ面と第2の基板の貼り合わせ面102aとは、およそ同時にガラス転移温度近傍に到達することとなる。
In the subsequent process, after the
印加する圧力は、第1の基板101および第2の基板102の材質等により異なり、第1の基板101と第2の基板102とを間隙なく密着させることができるように適宜選択される。本実施形態では、上記工程(A)において、基板の貼り合わせ面をガラス転移温度近傍に調整しているため、大きな圧力を印加することなく、基板の密着性を向上させることができる。たとえば、レーザ光のみによって溶着を行なう従来例と比較すると、印加する圧力をおよそ半減させることが可能である。さらには、レーザ光のみによる溶着では、密着性を改善するために印加する圧力を大きくしたり、大きな光エネルギーを加える必要があり、このために基板に流路パターンが形成されている場合には、当該流路パターンの変形が問題であったが、本実施形態によれば、印加する圧力を低減できるため、このような問題は大幅に抑制される。
The pressure to be applied varies depending on the material of the
次に、石英ガラス103および第1の基板101を介して、第2の基板の貼り合わせ面102aに分散されている光吸収物質に対して光105を照射して、光吸収物質を発熱させ、第2の基板の貼り合わせ面102aおよび/または第1の基板101の貼り合わせ面を融解させることにより、第1の基板101と第2の基板102とを溶着する(工程(C)、図1(c))。第1の基板101と第2の基板102とが、同程度の融点を有する熱可塑性樹脂から構成される場合には、光照射により、第1の基板101の貼り合わせ面および第2の基板の貼り合わせ面102aの双方が融解する。
Next, the light absorbing material dispersed on the
照射する光は、カーボンブラック等の光吸収物質が光を吸収して、比較的効率よく貼り合わせ面を加熱できるものであれば特に限定されず、たとえば、波長0.8〜1μm程度、パワー10〜300W程度のレーザ光を用いることができる。 Irradiation light is not particularly limited as long as a light absorbing material such as carbon black absorbs light and can heat the bonded surface relatively efficiently. For example, the wavelength is about 0.8 to 1 μm, and the power is 10 A laser beam of about 300 W can be used.
本実施形態においては、上記工程(A)において、貼り合わせ面の温度をガラス転移温度近傍まで上げているので、貼り合わせ面の温度を融点まで上げるのに必要な光エネルギーは、レーザ光のみによる溶着と比較して少なくて済む。 In the present embodiment, in the step (A), the temperature of the bonding surface is raised to the vicinity of the glass transition temperature, so that the light energy required to raise the temperature of the bonding surface to the melting point is solely due to the laser beam. Less than welding.
(変形例)
上記第1の実施形態では、工程(A)における第2の基板102の加熱を熱板104上で行ない、その後、第2の基板102を熱板104上に載置したまま、第1の基板101を重ねるが、本発明はこの態様に限定されるものではない。たとえば、第2の基板102を熱板104とは異なる熱板(ホットプレート)を用いて加熱した後、加熱された第2の基板102を熱板104上に移動し、この上に第1の基板101を重ねるようにしてもよい。この場合、熱板104は加熱しておく必要はない。また、熱板104上に第2の基板102を載置し、この上に熱板104とは異なる熱板(ホットプレート)を用いて加熱しておいた第1の基板101を重ねるようにしてもよい。この場合も熱板104は加熱しておく必要はない。
(Modification)
In the first embodiment, the heating of the
以上のように、本発明の基板の貼り合わせ方法およびマイクロチップの製造方法の特徴の1つは、第1の基板と第2の基板とを重ね合わせる前に、少なくともいずれかの基板の貼り合わせ面をガラス転移温度近傍まで予備加熱することにある。当該予備加熱を行なうことにより、わずかな圧力で基板間の間隙が消え、基板間の密着性を向上させることができる。印加圧力の低減は、基板に形成された流路パターンの変形の抑制または解消をもたらす。また、当該予備加熱を行なうことにより、貼り合わせ面の温度を融点まで上げるのに必要な光エネルギーを少なくすることができる。これにより、光照射時間を短くすることができるため、基板接合やマイクロチップ製造の生産性が向上し、プロセスコストはおよそ光の照射時間に比例することから、大幅なコストダウンを図ることができる。光照射時間の短縮化は、基板に形成された流路パターンの変形を抑制することにもつながる。さらに、光照射による加熱は通常急激であるため、照射面は荒れる、すなわち凹凸状となる傾向にあるが、光照射時間の短縮化は、このような照射面の粗面化を抑制する。このことは、マイクロチップの製造においては、マイクロチップ内部の流体回路内壁の粗面化を抑制できることを意味する。 As described above, one of the features of the substrate bonding method and the microchip manufacturing method of the present invention is that at least one of the substrates is bonded before the first substrate and the second substrate are overlaid. The purpose is to preheat the surface to near the glass transition temperature. By performing the preliminary heating, the gap between the substrates disappears with a slight pressure, and the adhesion between the substrates can be improved. Reduction of the applied pressure results in suppression or elimination of deformation of the flow path pattern formed on the substrate. Further, by performing the preliminary heating, it is possible to reduce the light energy necessary for raising the temperature of the bonding surface to the melting point. As a result, the light irradiation time can be shortened, the productivity of substrate bonding and microchip manufacturing is improved, and the process cost is approximately proportional to the light irradiation time, so that a significant cost reduction can be achieved. . The shortening of the light irradiation time also leads to suppressing the deformation of the flow path pattern formed on the substrate. Furthermore, since heating by light irradiation is usually rapid, the irradiated surface tends to be rough, that is, uneven, but shortening the light irradiation time suppresses such roughening of the irradiated surface. This means that the roughening of the inner wall of the fluid circuit inside the microchip can be suppressed in the manufacture of the microchip.
また、予備加熱を熱板を用いて行なえば、基板全体を均一に加熱することができ、過剰な熱を供給することがないため、光照射による加熱の場合に問題となる、貼り合わせ面の荒れ等をさらに抑制することができる。 In addition, if preheating is performed using a hot plate, the entire substrate can be heated uniformly, and excessive heat is not supplied. Therefore, there is a problem in the case of heating by light irradiation. Roughness and the like can be further suppressed.
<マイクロチップ>
本発明のマイクロチップは、好適には上記製造方法を用いて製造される。すなわち、本発明のマイクロチップは、貼り合わせ面の少なくとも一部に流体回路を構成するための凹部が形成されており、光を透過する熱可塑性樹脂からなる第1の基板と、少なくとも上記第1の基板との貼り合わせ面に光吸収物質が分散され、熱可塑性樹脂からなる第2の基板とを貼り合わせてなる。そして、第1の基板と第2の基板とは、上記工程(A)〜(C)を経て貼り合わされている。
<Microchip>
The microchip of the present invention is preferably manufactured using the above manufacturing method. That is, in the microchip of the present invention, a concave portion for forming a fluid circuit is formed on at least a part of the bonding surface, and the first substrate made of a thermoplastic resin that transmits light, and at least the first substrate. The light absorbing material is dispersed on the surface to be bonded to the substrate, and the second substrate made of a thermoplastic resin is bonded. And the 1st board | substrate and the 2nd board | substrate are bonded together through the said process (A)-(C).
図2は、本発明のマイクロチップの一例を示す概略断面図である。図2に示されるマイクロチップ200は、貼り合わせ面に流体回路を構成するための凹部を有する第1の基板201と、光吸収物質が分散された第2の基板202とを貼り合わせた構造を有している。また、マイクロチップ200はその内部に、たとえば流路等の流体回路206を有し、該流体回路206の内壁は、第1の基板201が有する凹部と、第2の基板202の貼り合わせ面とにより構成されている。
FIG. 2 is a schematic sectional view showing an example of the microchip of the present invention. A
本発明のマイクロチップの製造方法により得られるマイクロチップは、上述のように、第2の基板202の貼り合わせ面の荒れ(表面の凹凸)が低減されており、このことは、流体回路206の内壁のうち、第2の基板202の貼り合わせ面によって形成された壁面202bの荒れが低減されていることを意味する。具体的には、本発明のマイクロチップの製造方法により得られるマイクロチップにおける流体回路の内部壁面のうち、第2の基板の貼り合わせ面によって形成された壁面の表面粗さは、50μm未満である。本発明によれば、当該表面粗さが、20μm以下、さらには10μm以下であるマイクロチップを提供することも可能である。ここで、表面粗さは、マイクロチップ6サンプルについて、第2の基板の貼り合わせ面によって形成された壁面内の任意の5点での表面粗さ(トータル6×5=30点)を、次のような測定方法、条件で測定したときの当該30点の平均値である。
測定装置:レーザ顕微鏡 VK8500 キーエンス社製。
測定条件:658nmの光を壁面にスキャンして測定した。
As described above, the roughness of the bonding surface of the second substrate 202 (surface irregularities) is reduced in the microchip obtained by the microchip manufacturing method of the present invention. It means that the roughness of the
Measuring device: Laser microscope VK8500, manufactured by Keyence Corporation.
Measurement conditions: Measurement was carried out by scanning the wall with 658 nm light.
このように、本発明のマイクロチップにおいては、流体回路内壁の表面粗さが改善されている。マイクロチップにおいて、流路面がスムーズであることのメリットは大きく、流体回路内壁の表面荒れが抑制されることにより、流体回路内を流れる流体の制御を高精度に行なうことが可能となる。 Thus, in the microchip of the present invention, the surface roughness of the inner wall of the fluid circuit is improved. In the microchip, the merit of the smooth flow path is great, and the surface roughness of the inner wall of the fluid circuit is suppressed, so that the fluid flowing in the fluid circuit can be controlled with high accuracy.
以下、実施例を挙げて本発明をより詳細に説明するが、本発明はこれらに限定されるものではない。 EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited to these.
<実施例1>
図1を参照して、20mm角で厚さ3mmのポリメタクリル酸メチル(PMMA)基板の表面に流路となる凹部を掘り込んだ光透過性の第1の基板101を射出成型によって作製した。凹部の幅は狭いところで100μm程度とし、深さは100μm程度とした。次に、カーボンブラック(粒子径約20nm)を基板全体に分散した20mm角で厚さ1mmのPMMAからなる光吸収性の第2の基板102を押切加工によって作製した。ついで、熱板104の温度を75℃(PMMAのガラス転移温度は80℃である)とした後、当該熱板104上に第2の基板102を置いた(図1(a))。ついで、第2の基板の貼り合わせ面102aの温度が75℃になったのを確認した後、貼り合わせ面102a上に第1の基板101を重ねた。次に、石英ガラス103を第1の基板101上に載置し、当該石英ガラス103を介して0.2MPaの圧力で両基板に圧力を印加して、第1の基板101および第2の基板102を密着させた(図1(b))。次に、石英ガラス103の上から波長900μm、パワー50Wの光105(レーザ光)を第2の基板の貼り合わせ面102aに照射した(図1(c))。光105のスポットサイズの直径は5mmであり、スキャンスピード60mm/sで貼り合わせ面102a全体に照射した。光105によって貼り合わせ面102aの温度がPMMAの融点である140℃以上になったところで第1の基板101および第2の基板102が融解して接着した。
<Example 1>
Referring to FIG. 1, a light-transmitting
<実施例2>
図1を参照して、20mm角で厚さ3mmのポリメタクリル酸メチル(PMMA)基板の表面に流路となる凹部を掘り込んだ光透過性の第1の基板101を射出成型によって作製した。凹部の幅は狭いところで100μm程度とし、深さは100μm程度とした。次に、カーボンブラック(粒子径約20nm)を基板全体に分散した20mm角で厚さ1mmのPMMAからなる光吸収性の第2の基板102を押切加工によって作製した。ついで、第2の基板102を熱板(ホットプレート)を用いて、75℃で30秒間加熱し、第2の基板102の温度を75℃とした。次に、熱板104上に第2の基板102を置いた後(図1(a))、貼り合わせ面102a上に第1の基板101を重ねた。この際、熱板104の温度は特に制御しておらず、室温とした。次に、石英ガラス103を第1の基板101上に載置し、当該石英ガラス103を介して0.2MPaの圧力で両基板に圧力を印加して、第1の基板101および第2の基板102を密着させた(図1(b))。次に、石英ガラス103の上から波長900μm、パワー50Wの光105(レーザ光)を第2の基板の貼り合わせ面102aに照射した(図1(c))。光105のスポットサイズの直径は5mmであり、スキャンスピード60mm/sで貼り合わせ面102a全体に照射した。光105によって貼り合わせ面102aの温度がPMMAの融点である140℃以上になったところで第1の基板101および第2の基板102が融解して接着した。得られたマイクロチップにおける流体回路の内部壁面のうち、第2の基板の貼り合わせ面によって形成された壁面の表面粗さを上記方法により測定したところ、8.5±1.8μmであった。該表面の凹凸の最大値(凹部底面から凸部頂点までの距離の最大値)は18μmであった。
<Example 2>
Referring to FIG. 1, a light-transmitting
<比較例1>
熱板104を用いた予備加熱を行なうことなく、レーザ光の照射のみで第1の基板101および第2の基板102を貼り合わせたこと以外は、実施例1と同様にしてマイクロチップを作製した。その結果、実施例1と同等の密着性を得るためには、印加圧力を0.5MPaとし、かつレーザ光のスキャンスピードを20mm/sとする必要があることが確認された。また、得られたマイクロチップにおける流体回路の内部壁面のうち、第2の基板の貼り合わせ面によって形成された壁面の表面粗さを測定したところ、50μm〜80μmであった。
<Comparative Example 1>
A microchip was manufactured in the same manner as in Example 1 except that the
今回開示された実施の形態および実施例はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
101,201 第1の基板、102,202 第2の基板、102a 第2の基板の貼り合わせ面、103 石英ガラス、104 熱板、105 光、200 マイクロチップ、202b 第2の基板の貼り合わせ面によって形成された流体回路壁面、206 流体回路。 101, 201 First substrate, 102, 202 Second substrate, 102a Bonding surface of second substrate, 103 Quartz glass, 104 Heat plate, 105 Light, 200 Microchip, 202b Bonding surface of second substrate Fluid circuit wall surface formed by 206, Fluid circuit.
Claims (5)
(A)前記第1の基板および前記第2の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程、
(B)前記第1の基板および前記第2の基板を重ね合わせて、圧力を印加する工程、
(C)前記第1の基板を介して、前記光吸収物質に対して光を照射する工程。 In this method, a first substrate made of a thermoplastic resin that transmits light and a second substrate made of a thermoplastic resin in which a light-absorbing substance is dispersed on at least a bonding surface of the first substrate. And the bonding method of a board | substrate including the following processes (A)-(C).
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate to the vicinity of the glass transition temperature of a thermoplastic resin constituting the substrate;
(B) applying the pressure by superimposing the first substrate and the second substrate;
(C) A step of irradiating light to the light-absorbing substance through the first substrate.
(A)前記第1の基板および前記第2の基板のうち少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整する工程、
(B)前記第1の基板および前記第2の基板を重ね合わせて、圧力を印加する工程、
(C)前記第1の基板を介して、前記光吸収物質に対して光を照射する工程。 A recess for forming a fluid circuit is formed on at least a part of the bonding surface, and light is applied to the bonding surface between the first substrate made of a thermoplastic resin that transmits light and at least the first substrate. A manufacturing method of a microchip having a fluid circuit therein, in which an absorbent material is dispersed and bonded to a second substrate made of a thermoplastic resin, including the following steps (A) to (C): Microchip manufacturing method.
(A) adjusting the temperature of the bonding surface of at least one of the first substrate and the second substrate to the vicinity of the glass transition temperature of a thermoplastic resin constituting the substrate;
(B) applying the pressure by superimposing the first substrate and the second substrate;
(C) A step of irradiating light to the light-absorbing substance through the first substrate.
前記第1の基板と前記第2の基板とは、少なくとも一方の基板の貼り合わせ面の温度を、該基板を構成する熱可塑性樹脂のガラス転移温度近傍に調整した後、両基板を重ね合わせて圧力を印加し、前記第1の基板を介して、前記光吸収物質に対して光を照射することにより貼り合わされているマイクロチップ。 A recess for forming a fluid circuit is formed on at least a part of the bonding surface, and light is applied to the bonding surface between the first substrate made of a thermoplastic resin that transmits light and at least the first substrate. A microchip having a fluid circuit therein, in which an absorbent material is dispersed and bonded to a second substrate made of a thermoplastic resin,
The first substrate and the second substrate are prepared by adjusting the temperature of the bonding surface of at least one substrate to the vicinity of the glass transition temperature of the thermoplastic resin constituting the substrate, and then superimposing the two substrates. A microchip bonded by applying pressure and irradiating light to the light-absorbing substance through the first substrate.
前記流体回路の内部壁面のうち、前記第2の基板の貼り合わせ面によって形成された壁面の表面粗さが、50μm未満である、マイクロチップ。 A recess for forming a fluid circuit is formed on at least a part of the bonding surface, and light is applied to the bonding surface between the first substrate made of a thermoplastic resin that transmits light and at least the first substrate. A microchip having a fluid circuit therein, in which an absorbent material is dispersed and bonded to a second substrate made of a thermoplastic resin,
The microchip whose surface roughness of the wall surface formed by the bonding surface of the said 2nd board | substrate is less than 50 micrometers among the inner wall surfaces of the said fluid circuit.
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JP2007042182A JP2008203186A (en) | 2007-02-22 | 2007-02-22 | Substrate laminating method, manufacturing method of microchip, and the microchip |
PCT/JP2008/050675 WO2008102585A1 (en) | 2007-02-22 | 2008-01-21 | Substrate bonding method, microchip manufacturing method and microchip |
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KR20180001678A (en) * | 2016-06-27 | 2018-01-05 | 한국기계연구원 | Micro_channel device |
KR20180004693A (en) * | 2017-12-29 | 2018-01-12 | 한국기계연구원 | Micro_channel device with fastener |
KR101914395B1 (en) | 2017-12-29 | 2018-11-01 | 한국기계연구원 | Micro_channel device of locally pressurizing type |
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FR2930740B1 (en) * | 2008-04-30 | 2016-09-30 | Jean Claude Rene Vandevoorde | METHOD AND PLANT FOR WELDING PLASTIC MATERIAL LAYERS |
JP2012086411A (en) | 2010-10-18 | 2012-05-10 | Sony Corp | Method and device for thermocompression bonding |
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JP2000233448A (en) * | 1998-12-16 | 2000-08-29 | Sumitomo Chem Co Ltd | Method for thermally welding molten liquid crystal polyester resin molded object and metal |
JP2007038484A (en) * | 2005-08-02 | 2007-02-15 | Ushio Inc | Device for laminating microchip substrate |
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KR20180001678A (en) * | 2016-06-27 | 2018-01-05 | 한국기계연구원 | Micro_channel device |
KR101882078B1 (en) | 2016-06-27 | 2018-07-27 | 한국기계연구원 | Micro_channel device |
KR20180004693A (en) * | 2017-12-29 | 2018-01-12 | 한국기계연구원 | Micro_channel device with fastener |
KR101864556B1 (en) | 2017-12-29 | 2018-06-05 | 한국기계연구원 | Micro_channel device with fastener |
KR101914395B1 (en) | 2017-12-29 | 2018-11-01 | 한국기계연구원 | Micro_channel device of locally pressurizing type |
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