JP2008192053A - Data recovery system for nonvolatile semiconductor memory - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a data recovery system capable of recovering data even when an error beyond an error correction ability of own device occurs in a flash memory. <P>SOLUTION: The data recovery system includes a server 2 accessible via a network 1 and a plurality of information processing devices 3 having a flash memory 5. When an error occurs in the flash memory 5, data are acquired from the server 2 storing the same data or another information processing device 3 via the network 1 using a wireless network or a network using a PLC for recovering the data. The recovery is carried out during execution of an application program 501 or its non-operation time. This data recovery system is suitable for an error due to a Read Disturb phenomenon. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a technique for avoiding troubles based on errors in which data stored in a non-volatile semiconductor memory changes, such as a Read Disturb phenomenon, and particularly suitable for data restoration when troubles exceeding the repair capability of the device itself occur. About the system.

  Among non-volatile memories, NAND flash memories are used in large quantities in SD memory cards and the like in order to enable high integration, simple manufacturing cost reduction, and easy writing by users. .

  Recently, NAND flash memory has been adopted in game machines and the like. When the NAND flash memory is used in a game machine or the like, writing does not occur and continuous reading occurs. That is, a NAND flash memory is increasingly used as a ROM.

  However, in game machines and the like, since a specific program is often read repeatedly, it has begun to be pointed out that the program may be rewritten unintentionally. Such a phenomenon is called a “Read Disturb” phenomenon, and a mechanism in which this phenomenon occurs will be briefly described below.

  FIG. 8 is a schematic diagram of a NAND flash memory. The NAND flash memory includes bit lines 41 and word lines 42, 43, 44, memory cells 52, 53, selection transistors 54, and the like wired in a lattice pattern.

  Consider a case where binary data (“0” or “1”) stored in the memory cell 52 is read. In this case, the memory cell 52 is called a selected cell 52 and the memory cell 53 is called a non-selected cell 53. First, the bit line 41 to which the selected cell 52 belongs is specified by the selection transistor 54. Next, a low gate voltage V (Low) = 0 V is applied to the word line 42 to which the selected cell 52 belongs. Then, a high gate voltage V (High) to 5 V is applied to the word line 43 to which the non-selected cell 53 belongs. At this time, since the non-selected cell 53 is in a weak write state, electrons are trapped and accumulated in the floating gate of the non-selected cell 53. That is, when the binary data stored in the selected cell 52 is repeatedly read, the threshold voltage of the non-selected cell 53 shifts, and the binary data stored in the non-selected cell 53 changes from “1” to “0”. May be rewritten unintentionally.

  However, even if the binary data stored in the non-selected cell 53 is unintentionally rewritten, the function of the non-selected cell 53 is restored when the data is erased collectively before being newly written. be able to. However, when writing does not occur and continuous reading occurs, the function of the non-selected cell 53 cannot be recovered.

  The following patent documents can be cited as documents providing means for avoiding the “Read Disturb” phenomenon described above.

  Regarding data restoration technology, ECC (Error Check and Correct) and the like are known. For example, if an error correcting code (ECC) is incorporated in the flash memory in advance, even if an error occurs in the flash memory, the error can be checked and repaired.

US Patent Application Publication No. 2005/0210184

  As described above, the “Read Disturb” phenomenon is a later problem that occurs when the same data is repeatedly read without being written or erased. Therefore, it is difficult to completely prevent the occurrence of the “Read Disturb” phenomenon in advance in quality inspection at the time of product shipment.

  Although a certain level of reliability can be secured by using ECC or the like, there is a limit to the error correction capability, which is not sufficient. For example, in one method, if an 8-bit ECC is prepared for 64-bit data in ECC, a 1-bit error can be corrected, but an error exceeding the 1-bit error cannot be corrected. In particular, since the “Read Disturb” phenomenon occurs in non-selected cells around the selected cell, it may occur in large numbers, and the risk of exceeding the correction capability is considered high.

  Accordingly, an object of the present invention is to provide means capable of spontaneously restoring data even if an error occurs later in the flash memory as in the “Read Disturb” phenomenon. An object of the present invention is to provide a data restoration system that can be restored even if an error exceeding the error correction capability of the device itself occurs.

  In order to solve the above problems, a data recovery system for a nonvolatile semiconductor memory according to the present invention of claim 1 includes a rewritable nonvolatile semiconductor memory and a host for processing stored data stored in the nonvolatile semiconductor memory. An information processing apparatus comprising: a system, and when the stored data changes and an error occurs, information about the stored data is acquired from outside the information processing apparatus via the network, and the stored data is Means for repairing.

  The present invention described in claim 2 is a data recovery system for a nonvolatile semiconductor memory according to claim 1, and includes a server that stores the same data as the stored data, and the information processing apparatus includes the server And the stored data is restored.

  According to a third aspect of the present invention, there is provided a data recovery system for a nonvolatile semiconductor memory according to the first aspect, including a plurality of the information processing devices that store the same data as the stored data, A processing apparatus accesses another information processing apparatus to restore the stored data.

  According to a fourth aspect of the present invention, there is provided a data restoration system for a nonvolatile semiconductor memory according to any one of the first to third aspects, comprising a restoration program for restoring the stored data, and an application program When an error occurs during execution, the stored data is repaired based on the repair program.

  According to a fifth aspect of the present invention, there is provided the data repair system for a nonvolatile semiconductor memory according to the fourth aspect, wherein the repair program is stored in the nonvolatile semiconductor memory together with the application program. Features.

  According to a sixth aspect of the present invention, there is provided a data recovery system for a nonvolatile semiconductor memory according to the fourth or fifth aspect, wherein the host system temporarily stores storage data read from the nonvolatile semiconductor memory. A buffer memory for storing the program, and reading and executing the repair program in the buffer memory.

  According to a seventh aspect of the present invention, there is provided the data repair system for a nonvolatile semiconductor memory according to the sixth aspect, wherein the repair program is read into the buffer memory in advance before the application program is executed. Features.

  The invention according to claim 8 is the data repair system for nonvolatile semiconductor memory according to claim 6, wherein the repair program is read into the buffer memory when an error occurs during the execution of the application program. Features.

  A ninth aspect of the present invention is the nonvolatile semiconductor memory data repair system according to any one of the first to third aspects, comprising a repair program for repairing the stored data, and the repair program Means for checking whether or not there is an error in the stored data, a repair information storage means for storing the information when an error is found in the stored data, and a repair information storage means at a predetermined timing. And means for restoring the stored data based on the stored information.

  According to a tenth aspect of the present invention, there is provided a data recovery system for a nonvolatile semiconductor memory according to the ninth aspect, wherein the stored data is recovered when the information processing apparatus is in a sleep state. To do.

  The present invention described in claim 11 is a data recovery system for a nonvolatile semiconductor memory according to claim 9, wherein the stored data is recovered when the information processing apparatus is in a charged state. To do.

  The present invention described in claim 12 is a data recovery system for a nonvolatile semiconductor memory according to any one of claims 1 to 11, wherein at least the same data as stored data in which an error has occurred is acquired, The stored data is restored by rewriting the stored data in which an error has occurred.

  According to a thirteenth aspect of the present invention, there is provided a data recovery system for a nonvolatile semiconductor memory according to any one of the first to twelfth aspects, wherein the information processing apparatus is a rewritable nonvolatile semiconductor memory. An unused area, and a management unit that manages storage information of storage data stored in the unused area, and acquires at least the same data as the storage data in which an error has occurred, and the unused area And storing the acquired data as the acquired data, and replacing the acquired data with the stored data by the management means.

  A fourteenth aspect of the present invention is the nonvolatile semiconductor memory data restoration system according to any one of the first to thirteenth aspects, wherein the error of the stored data is caused by a Read Disturb phenomenon. It is characterized by being.

  By using the network, data is acquired from the outside of the own device and data restoration is performed. Therefore, even if an error exceeding the error correction capability of the own device occurs in the flash memory, the data can be restored.

  FIG. 1 is a block diagram showing the basic configuration of a nonvolatile semiconductor memory data restoration system according to the present invention. As shown in FIG. 1, the nonvolatile semiconductor memory data restoration system according to the present invention includes a server 2 and an information processing device 3 that are accessible via a network 1. For example, when an abnormality (error) occurs in the data of the nonvolatile semiconductor memory 5 (flash memory 5) included in the information processing apparatus 3a, the information processing apparatus 3a and the server 2 or two information processing Data restoration processing is executed between the devices 3a and 3b.

{network}
The network 1 mainly corresponds to the Internet, but is not limited to this, and includes a network that is uniquely constructed such as a LAN. In short, it is sufficient that the information processing apparatus 3 and the server 2 can access each other and perform data communication.

  Specific examples of the network 1 include a wireless network using radio waves. In addition, a network via power line communication (Power Line Communication) can be used. The power line carrier communication is a communication form that uses a power line as a communication line. For example, if the power cable 4 of the server 2 or the information processing device 3 is connected to the power line 11, the information processing device 3 can be connected to the Internet via a PLC modem.

{server}
The server 2 includes means for storing at least the same data as the storage data stored in the flash memory 5 included in each information processing device 3. The information processing apparatus 3 includes a unit that receives access from any one of the information processing apparatuses 3 via the network 1 and transmits data stored in the own apparatus in response to a request from the information processing apparatus 3. When there are a plurality of information processing devices 3 and each stores different storage data, the server 2 can store a plurality of data according to the storage data stored in each information processing device 3, Each information processing apparatus 3 can be individually handled. Since the server 2 can collectively manage the original data, there is an advantage that it is easy to manage such as data maintenance and update.

{Information processing device}
The information processing apparatus 3 includes a flash memory 5 and a host system 6 and also includes means for accessing the server 2 and other information processing apparatuses 3 by connecting to a network such as the Internet in a wired or wireless form. Specific examples of the information processing apparatus 3 include a communication game machine. It is preferable that there are a plurality of information processing apparatuses 3 having at least the same application, such as a battle game machine. Since each of them has the same data, it is possible to perform data restoration processing between any information processing apparatuses 3, avoid the concentration of access to the server 2 during data restoration, and reduce the communication burden. Because.

{Nonvolatile semiconductor memory}
The nonvolatile semiconductor memory 5 is a rewritable nonvolatile semiconductor memory, and corresponds to a flash memory. Examples of the flash memory include a NOR flash memory and a NAND flash memory. A NAND flash memory is suitable, but the type is not limited. The flash memory 5 may be mounted integrally with the information processing apparatus 3, or may be detachably mounted on the information processing apparatus 3 in the form of an external storage device such as a game cartridge.

  The flash memory 5 stores data constituting various programs such as a game content application program 501 (stored data). A user who uses the information processing apparatus 3 can enjoy game content by executing the application program 501. The flash memory 5 can be provided with an unused area 5b in which no data is stored, in addition to a used area 5a for storing the application program 501 and the like. Further, the flash memory 5 can include a FAT (File Allocation Tables) 5c that manages storage information of data stored in the flash memory 5 (see FIG. 4).

{Host system}
The host system 6 is a central processing unit that performs overall control of the information processing apparatus 3, and includes a calculation unit, a control unit, a storage unit, an input / output unit, and the like. Specifically, the information processing apparatus 3 includes a CPU, a ROM, a buffer memory 7, a battery 8, a monitor, an operation button, and the like, and these are controlled by the host system 6. For example, the ROM stores various programs such as a system program 9 that controls the entire information processing apparatus 3. The buffer memory 7 mainly functions as a storage unit that temporarily stores storage data read from the flash memory 5. The battery 8 has a power cable 4 connected to the power line 11 and not only stores and functions as a power source for the information processing device 3 but also contributes to a data communication function by power line carrier communication in the present invention.

{Data restoration processing}
Next, the data restoration process in this system will be specifically described. As described above, for example, in a NAND flash memory, an error due to the “Read Disturb” phenomenon is considered to occur in cells other than the selected cell from which data is read, and therefore it is not predictable when and where. There is also a risk that it may occur beyond the repair capability of the device itself, such as ECC. There may be a case where an error occurs explicitly during the execution of the application program 501 and causes a trouble, or a case where an error does not occur during the execution of the application program 501 and it exists potentially and causes a trouble suddenly. There is also. Therefore, in the first embodiment, a data repair process for an obvious error that occurs during execution of the application program 501 will be described, and in the second embodiment, a data repair process for a potential error will be described. .

{First embodiment}
FIG. 2 shows a flowchart in the present embodiment, and FIG. 3 shows a block diagram of the information processing apparatus 3a in the present embodiment. As shown in FIG. 3, in the present embodiment, a case where a repair program 10 for repairing stored data is stored in the flash memory 5 together with the application program 501 is illustrated. The repair program 10 may be incorporated in the application program 501 as a repair routine. In FIG. 1, the information processing apparatus 3a and the like are connected to the network 1 and are accessible.

  First, an instruction to execute an application program 501 such as an online game is issued from the user to the host system 6 (step S1). Then, the host system 6 reads the repair program 10 into the buffer memory 7 before reading the application program 501 (step S2). The read repair program 10 resides in the buffer memory 7 and is held in an executable state at least during execution of the application program 501. Thereafter, the application program 501 is read through the buffer memory 7 and executed by the host system 6 (step S3). While the application program 501 is being executed, the user can enjoy a game or the like by operating the information processing apparatus 3. The repair program 10 may be read to the buffer memory 7 when an error occurs.

  If an error occurs in the storage data constituting the application program 501 during the execution of the application program 501 such as the game, the repair program 10 is executed by the host system 6 immediately after the error occurs ( Step S4).

  FIG. 4 shows a flowchart showing the flow of processing by the repair program 10. When the restoration program 10 receives an execution instruction from the host system 6 (step S10), the restoration program 10 is sent to the server 2 including the same application program 501 or another information processing apparatus 3b including the same application program 501 via the network 1. Access is made (step S11). For example, if it is a game machine that performs a battle-type online game, it is possible to access a game machine that is an opponent.

  The repair program 10 acquires data (acquired data) necessary for repairing the stored data, and stores the acquired data in the flash memory 5 to perform data repair (steps S12 and S13).

  FIG. 5 shows a specific example of data restoration by the restoration program 10. As shown in FIG. 5A, the flash memory 5 includes a FAT 5c and a storage area. The storage area is composed of a plurality of pages 5d, which are units for writing and reading, and a block 5e, which is a unit for erasing data, consisting of a plurality of pages 5d. Here, for the sake of explanation, as shown in FIG. 5, a plurality of pages 5d,..., 5d in which data A to D are stored form one block 5e, and C data therein is stored. It is assumed that an error has occurred due to rewriting due to the “Read Disturb” phenomenon within the area of the page 5d that has been made (C → Z).

  In this case, the repair program 10 acquires data constituting the block 5e collectively from the outside via the network. Then, the block 5e stored in the flash memory 5 of the device itself is erased, and the data is restored by writing the acquired data therein. Data constituting the entire application program 501 can be acquired, and the entire data can be rewritten to restore the data. In short, it is sufficient to acquire at least data including stored data in which an error has occurred and rewrite it with data including an error. Since rewriting is performed, the storage area of the flash memory 5 can be used efficiently. In particular, an error due to the “Read Disturb” phenomenon is effective because it can be recovered by rewriting and erasing.

  Further, as shown in FIGS. 5B and 5C, an unused area 5b of the flash memory 5 may be used. In this case, the information processing apparatus 3 is provided with a management unit that manages storage information of storage data stored in the flash memory 5, such as the FAT 5c. Then, as shown in FIG. 5B, the acquired data acquired in units of the block 5e is stored in the unused area 5b, and the execution order in the application program 501 in the management means is newly rearranged, It substitutes for the acquired data. According to this, since the erasing process becomes unnecessary in a series of data restoration processes, the processing time can be shortened compared with the case of overwriting, and it is effective when urgent is required. Of course, the original block 5e can be erased and reused.

  As shown in FIG. 5C, processing can be performed in units of pages 5d. This is because the unused area 5b is used, so that it is not necessary to process the block 5e. Specifically, similarly to the above, the information processing device 3 is provided with management means for managing the storage information of the storage data stored in the flash memory 5, and the acquired data acquired in units of pages 5d is stored in the unused area 5b. To remember. Then, by changing the chain information of logical addresses managed by the management means, the execution order in the application program 501 is newly rearranged and replaced with the acquired data.

  This process is suitable as a data restoration method during execution of the application program 501 because the amount of data required for restoration is small and can be restored in an extremely short time. However, since erasure is performed in units of the block 5e, the page 5d having an error remains in the flash memory 5 as it is.

  Further, since the repair program 10 of the present embodiment is attached to the application program 501, there is an advantage that the repair program 10 can be set according to the characteristics of the application program 501.

{Second Embodiment}
FIG. 6 shows a flowchart in the present embodiment, and FIG. 7 shows a block diagram of the information processing apparatus 3 in the present embodiment. As shown in FIG. 7, the present embodiment illustrates a case where the repair program 10 is provided in the host system 6. In FIG. 1, the information processing apparatus 3 a and the like are connected to the network 1 and are accessible.

  Similarly to the first embodiment, the repair program 10 may be stored in the flash memory 5 together with the application program 501 or may be incorporated in the application program 501 as a repair routine. In that case, the data is read to the host system 6 in advance or when an error occurs. In short, it is sufficient that the repair program 10 is in an executable state.

  The network 1 of the present embodiment can use a general network, but it is preferable to use a network via a wireless network or power line carrier communication. This is because when the information processing device 3 is in the sleep state or in the charged state, data can be restored without being known to the user, and the user is not anxious.

  The restoration program 10 is, for example, when the information processing apparatus 3 is turned on or off, when the application program 501 is started or ended, when idle, when data is backed up, at a certain period during the execution of the application program 501, etc. It is checked whether or not there is an error in the stored data stored in the flash memory 5 at a predetermined timing (step S20). When the storage data in which an error has occurred is found in the flash memory 5, data necessary for the repair, such as the position and number of the stored data, is stored as repair information (step S21). The repair information is stored in any storage device (repair information storage means) of the information processing device 3 such as the buffer memory 7 (step S21). These series of processes are performed in the background of the application program 501 so as not to give the user anxiety.

  Next, during the suspension of the application program 501, for example, when the information processing apparatus 3 is in a sleep state or in a charged state, the stored data is repaired by the repair program 10 based on the stored repair information ( Step S22). For example, the application program 501 may be executed at a time when the application program 501 is not executed, such as at night.

  Since the specific flow of data restoration by the restoration program 10 is not different from that described in the first embodiment, the description thereof is omitted (see FIGS. 4 and 5).

  In the present embodiment, since data restoration is performed while the application program 501 is suspended, there is an advantage that time-consuming data restoration processing such as rewriting of the entire data can be performed safely and reliably. When the repair program 10 is provided on the host system 6 side, it is advantageous in that the storage area of the flash memory 5 can be used to the maximum extent for storing data of the application program 501.

  As described above, according to the flash memory data restoration system of the present invention, data is acquired from the outside of the own device using a network and data restoration is performed on the basis of the data. Even if an error exceeding the error correction capability occurs, data recovery can be performed.

  If there are a plurality of information processing apparatuses 3 that store the same stored data, the server 2 is not necessarily required. In addition, if there is a server 2 that stores the same stored data, the number of information processing apparatuses 3 that store the same stored data may not be plural.

  The unused area 5b of the flash memory used for restoration does not necessarily have to be that of the flash memory in which data restoration is performed, and other unused rewritable nonvolatile semiconductor memories mounted on the information processing apparatus 3 are unused. Area available. For example, if a NOR type flash memory is separately mounted on the information processing apparatus 3, the unused area can be used. By doing so, the reliability of the target data can be further ensured.

  The management means for managing the storage information of the acquired data stored in the unused area 5b of the flash memory 5 is not necessarily the FAT 5c. For example, the management table can be set using the host system 6 of the information processing apparatus 3 or another rewritable nonvolatile semiconductor memory mounted on the information processing apparatus 3.

  The configurations in the first and second embodiments may be combined so that a data restoration function suitable for the situation can be exhibited. Specifically, the repair program 10 is incorporated in both the flash memory 5 and the host system 6. By doing so, when the application program 501 is executed, the restoration process can be performed in a relatively short time, and a more complete data restoration process such as rewriting all data while the application program 501 is suspended can be performed in combination. Of course, the repair program 10 to be incorporated is not necessarily the same, and can be set in accordance with each functional characteristic.

  The data restoration process may be executed directly on the flash memory 5 without reading the stored data into the buffer memory 7. For example, a part of the unused area 5 b of the flash memory 5 can be substituted for the buffer memory 7.

  The present invention is applicable not only when a trouble exceeding the repair capability of the own device such as ECC occurs but also within the range of the repair capability of the own device. In addition to error correction functions such as ECC, they may be incorporated in a superimposed manner.

  For example, a predetermined threshold related to an error, such as an accumulated value of the number of occurrences of errors or an error occurrence frequency, is set. Then, the repair program 10 is provided with means for checking whether or not an error exceeding the threshold value has occurred, and when an error exceeding the threshold value occurs, the data is repaired. By doing so, it is possible to reduce the risk of causing serious troubles such as system runaway due to accumulation of errors, which is effective.

  The repair program 10 according to the first embodiment may be provided on the host system 6 side. The repair program 10 in the second embodiment may be provided on the flash memory 5 side.

  In the above embodiment, an error due to the “Read Disturb” phenomenon has been described as an example, but the present invention is not necessarily limited thereto.

It is a block diagram which shows the basic composition of the data recovery system of the non-volatile semiconductor memory concerning this invention. It is a flowchart in a 1st embodiment. 1 is a block diagram of an information processing apparatus according to a first embodiment. It is a flowchart which shows the flow of a process of the repair program in 1st Embodiment. It is a figure for demonstrating the data restoration by the restoration program in 1st Embodiment. It is a flowchart in 2nd Embodiment. It is a block diagram of the information processing apparatus in 2nd Embodiment. It is a figure for demonstrating the "Read Disturb" phenomenon.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Network 2 Server 3 Information processing apparatus 5 Non-volatile semiconductor memory 6 Host system

Claims (14)

A rewritable nonvolatile semiconductor memory;
A host system for processing stored data stored in the nonvolatile semiconductor memory;
Including an information processing apparatus comprising:
Means for acquiring information relating to the storage data from outside the information processing apparatus and restoring the storage data via the network when the storage data has changed and an error has occurred;
A data recovery system for a nonvolatile semiconductor memory, comprising: A nonvolatile semiconductor memory data recovery system according to claim 1,
Including a server for storing the same data as the stored data,
A data recovery system for a nonvolatile semiconductor memory, wherein the information processing apparatus accesses the server to recover the stored data. A nonvolatile semiconductor memory data recovery system according to claim 1,
Including a plurality of the information processing devices for storing the same data as the stored data;
A data restoration system for a nonvolatile semiconductor memory, wherein any one of the information processing apparatuses accesses another information processing apparatus to restore the stored data. A data recovery system for a nonvolatile semiconductor memory according to any one of claims 1 to 3,
A repair program for repairing the stored data;
With
A data recovery system for a nonvolatile semiconductor memory, wherein, when an error occurs during execution of an application program, the stored data is repaired based on the repair program. A data recovery system for a nonvolatile semiconductor memory according to claim 4,
A data repair system for a nonvolatile semiconductor memory, wherein the repair program is stored in the nonvolatile semiconductor memory together with the application program. A data recovery system for a nonvolatile semiconductor memory according to claim 4 or 5,
The host system is
A buffer memory for temporarily storing storage data read from the nonvolatile semiconductor memory;
With
A data restoration system for a nonvolatile semiconductor memory, wherein the restoration program is read into the buffer memory and executed. A data recovery system for a nonvolatile semiconductor memory according to claim 6,
A data repair system for a nonvolatile semiconductor memory, wherein the repair program is read into the buffer memory in advance before the application program is executed. A data recovery system for a nonvolatile semiconductor memory according to claim 6,
A data repair system for a nonvolatile semiconductor memory, wherein the repair program is read into the buffer memory when an error occurs during execution of the application program. A data recovery system for a nonvolatile semiconductor memory according to any one of claims 1 to 3,
A repair program for repairing the stored data;
With
The repair program is
Means for checking whether there is an error in the stored data;
When an error is found in the stored data, repair information storage means for storing the information,
Means for repairing the stored data based on information stored in the repair information storage means at a predetermined timing;
A data recovery system for a nonvolatile semiconductor memory, comprising: A nonvolatile semiconductor memory data recovery system according to claim 9,
A data recovery system for a nonvolatile semiconductor memory, wherein the stored data is recovered when the information processing apparatus is in a sleep state. A nonvolatile semiconductor memory data recovery system according to claim 9,
A data recovery system for a nonvolatile semiconductor memory, wherein the stored data is recovered when the information processing apparatus is in a charged state. A data recovery system for a nonvolatile semiconductor memory according to any one of claims 1 to 11,
A data recovery system for a nonvolatile semiconductor memory, wherein at least the same data as the stored data in which an error has occurred is acquired, and the stored data in which the error has occurred is rewritten to this to restore the stored data. A data recovery system for a nonvolatile semiconductor memory according to any one of claims 1 to 12,
The information processing apparatus is
An unused area of the rewritable nonvolatile semiconductor memory, and
Management means for managing storage information of storage data stored in the unused area;
Have
By acquiring at least the same data as the stored data in which an error has occurred and storing it in the unused area as acquired data, and replacing the acquired data with the stored data by the management means, A data recovery system for a nonvolatile semiconductor memory, characterized by performing recovery. A data recovery system for a nonvolatile semiconductor memory according to any one of claims 1 to 13,
A data recovery system for a nonvolatile semiconductor memory, wherein the stored data error is caused by a Read Disturb phenomenon.

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