JP2008191850A - Pressure sensitive paper, and handwriting recording system using pressure sensitive paper - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pressure sensitive paper including a plurality of semiconductor devices exchanging data by radio communication, which can record handwriting by radio communication with the plurality of semiconductor devices, and to establish a system for recording handwriting using the pressure sensitive paper. <P>SOLUTION: The system comprises a semiconductor device embedded into a paper layer of a paper substrate having at least one layer and provided on a writing surface of the paper substrate, and an external device radio-communicable with the semiconductor device. The semiconductor device includes an antenna circuit communicable with the external device, a signal processing circuit and a storage part storing individual identification information. When a pen pressure is applied to the semiconductor device provided on the writing surface of the paper substrate, at least one of the antenna circuit and the signal processing circuit is broken, whereby the semiconductor device a differently operates to a signal from the external device. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a pressure sensitive paper and a handwriting recording system using the pressure sensitive paper. In particular, the present invention relates to a handwriting recording system using pressure-sensitive paper that performs handwriting recording with a wireless signal from the pressure-sensitive paper.

In recent years, due to the increase in commercial transactions, pressure-sensitive paper that can easily transfer handwriting is spreading, and such pressure-sensitive paper can be used for various forms such as cards, insurance application forms, receipts, various forms such as invoices and invoices. It is used in the field.

These pressure-sensitive papers are placed on the paper to be transferred, and the handwriting is transferred by applying pressure with a writing tool or the like. Therefore, two types of capsules called particulate couplers are sprayed uniformly, and the color former contained in the first capsule and the developer contained in the second capsule are caused by the pressure of the writing instrument. When crushed, the liquids mix with each other and chemically react to color the paper to be transferred.

There are various methods for constructing the pressure-sensitive paper. For example, a pressure-sensitive paper composed of a plurality of paper, a color former, a developer, a data storage element, and a transmission / reception unit has been proposed (for example, Patent Document 1). .
Japanese Patent Laid-Open No. 2002-254806

However, since the color former and the developer in the coupler are thinned by being wetted with water, there is a possibility that the transferred characters disappear due to water wetting. For the above reasons, when the paper to be transferred is stored, it cannot be stored in a place with high humidity. Furthermore, the paper after the transfer can be easily copied by a copying machine, and there is a concern about information protection. In addition, there is a problem that communication cannot be performed when the transmission / reception unit is destroyed or cut off by writing pressure.

In view of the above problems, the present invention is a pressure-sensitive paper composed of a plurality of semiconductor devices that perform data communication by wireless communication, and is capable of performing handwriting recording by wireless communication with a plurality of semiconductor devices. The purpose is to provide a compressed paper. Furthermore, this invention makes it a subject to construct | assemble the system which records a handwriting using such a pressure sensitive paper.

In order to solve the above-mentioned problems, the pressure-sensitive paper according to the present invention has a plurality of semiconductor devices, communicates data by wireless communication, and records handwriting on the pressure-sensitive paper from the communicated signal. To do. In this specification, “handwriting” means the presence or absence of the semiconductor devices destroyed by writing or the arrangement thereof.

The present invention has been made paying attention to the fact that communication cannot be performed when a semiconductor device provided on pressure-sensitive paper is destroyed by writing pressure. The pressure sensitive paper of the present invention is constituted by a plurality of semiconductor devices having means for transmitting coordinate information corresponding to the position on the pressure sensitive paper. The handwriting can be recorded by specifying the coordinates at which the semiconductor device is destroyed by the writing pressure and communication becomes impossible.

One of the pressure-sensitive papers of the present invention includes a semiconductor device that is incorporated in a paper layer of a paper base material having at least one layer and is provided on a writing surface of the paper base material. The semiconductor device communicates with an external device. An antenna circuit, a signal processing circuit, and a storage unit that stores solid identification information. When writing pressure is applied to a semiconductor device provided on a writing surface of a paper base, the antenna circuit or the signal processing When at least one of the circuits is destroyed, it becomes impossible to transmit the solid identification information in the storage unit. Note that the semiconductor device may have a structure in which the first paper and the second paper are formed, or a structure in which the semiconductor device is formed on a single sheet of paper.

One of the pressure-sensitive papers of the present invention includes a plurality of semiconductor devices that are incorporated in a paper layer of a paper base material having at least one layer and arranged in a matrix on the writing surface of the paper base material. The semiconductor device includes an antenna circuit that can communicate with an external device, a signal processing circuit, and a storage unit that stores solid identification information. When the writing pressure is applied to the writing surface of the paper base, When at least one of the antenna circuit or the signal processing circuit of the semiconductor device to which the pressure is applied is destroyed, it becomes impossible to transmit the solid identification information stored in the storage unit of the semiconductor device to which the writing pressure is applied. For example, in the plurality of semiconductor devices, in the pressure sensitive paper, any coordinate data among m rows and n columns corresponding to the positions where the respective semiconductor devices are provided is stored.

In addition, handwriting recording is performed between the pressure-sensitive paper described above and an external device (a reader device, a reader / writer (R / W) device, an interrogator, a mobile phone or a computer having at least a reading function) that performs wireless communication with the pressure-sensitive paper. A system can be constructed.

One of the handwriting recording systems of the present invention is a semiconductor device embedded in a paper layer of a paper base material having at least one layer, and an external device capable of wirelessly communicating with the semiconductor device provided on the writing surface of the paper base material The semiconductor device includes an antenna circuit that can communicate with an external device, a signal processing circuit, and a storage unit that stores solid identification information, and is provided on a writing surface of a paper substrate. When writing pressure is applied to the semiconductor device, at least one of the antenna circuit and the signal processing circuit is destroyed, so that the semiconductor device performs different operation states on the signal from the external device.

One of the handwriting recording systems of the present invention includes a plurality of semiconductor devices that are incorporated in a paper layer of a paper base material having at least one layer and arranged in a matrix on a writing surface of the paper base material, and a plurality of semiconductor devices The plurality of semiconductor devices each include an antenna circuit that can communicate with the external device, a signal processing circuit, and a storage unit that stores solid identification information. When writing pressure is applied to the writing surface of the material, at least one of the antenna circuit or the signal processing circuit of the semiconductor device to which the writing pressure is applied is destroyed, so that the semiconductor device to which the writing pressure is applied is removed from an external device. Different operating states are performed for the signals. Further, in the plurality of semiconductor devices, in the pressure sensitive paper, any coordinate data among m rows and n columns corresponding to the positions where the respective semiconductor devices are provided is stored.

In the present invention, being connected is assumed to be electrically connected. Therefore, in the configuration disclosed by the present invention, in addition to a predetermined connection relationship, other elements (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, etc.) that can be electrically connected are arranged. May be.

Note that a semiconductor device in this specification refers to all devices that can function by utilizing semiconductor characteristics.

According to the present invention, it is possible to provide a pressure sensitive paper capable of recording a handwriting by wireless communication. Therefore, by using the pressure sensitive paper according to the present invention, it is possible to construct a handwriting recording system for recording information (for example, characters, graphics) such as what information is written on the pressure sensitive paper.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, common reference numerals indicate the same portions or portions having similar functions, and repetitive description thereof is omitted.

(Embodiment 1)
In the present embodiment, the configuration of the pressure sensitive paper in the present invention and the configuration of the handwriting recording system of the present invention using the pressure sensitive paper will be described.

The handwriting recording system of the present invention records handwriting on pressure-sensitive paper by communicating with a pressure-sensitive paper having a semiconductor device with an external device. For example, in a pressure sensitive paper having a plurality of semiconductor devices arranged in a matrix, the handwriting is recorded by specifying the unique identification information of the semiconductor device destroyed by the writing pressure (pen pressure, pressing) of the writing with an external device. be able to.

FIG. 1A is an external view of a handwriting recording system according to the present invention, and shows an example in which handwriting is recorded using pressure-sensitive paper 101. A pressure sensitive paper 101 having a semiconductor device is a pressure sensitive paper that performs wireless communication. Since the semiconductor device includes a circuit that performs wireless communication, the “semiconductor device” is also referred to as a “wireless chip”.

FIG. 1B is a block diagram for explaining the configuration of the handwriting recording system of the present invention and signal transmission / reception in the system. As shown in FIG. 1B, the pressure sensitive paper 101 is composed of m × n wireless chips. Of course, in the present invention, the number of wireless chips is not limited to m × n, and it is only necessary to have at least one wireless chip. Hereinafter, the number of m × n is used for convenience of explanation. Each of the m × n wireless chips can communicate with the external device 102.

The m × n wireless chips constituting the pressure sensitive paper 101 are incorporated into the paper constituting the pressure sensitive paper 101 in the process of forming the pressure sensitive paper 101. Specifically, the wireless chip can be formed on a paper base (paper) having at least one layer and provided on the writing surface of the paper base. This point will be described later. Further, in FIGS. 1A and 1B, the wireless chip is shown so that it can be seen from the pressure-sensitive paper surface for convenience, but the wireless chip cannot actually be seen from the surface because it is incorporated. Note that the wireless chip may be seen through the pressure sensitive paper surface by forming a thin pressure sensitive paper according to the application.

The external device 102 is connected to the information processing device 103 via a LAN (local area network) or the like. The data transfer method between the external apparatus 102 and the information processing apparatus 103 may be selected according to the amount of data exchanged and the communication distance. Typical transfer methods include a serial method and a parallel method. The former is a method of transferring data bit by bit using a single signal line. The transfer speed is slow but the transfer distance is long, and the latter is a method of transferring multiple bits simultaneously using multiple signal lines. High speed but short transfer distance.

The information processing apparatus 103 is a control unit of a system that records the handwriting on the pressure-sensitive paper 101 based on control of the external apparatus 102 and a signal from the external apparatus 102. The connection between the information processing apparatus 103 and the external apparatus 102 can be established by either a wired network or a wireless network.

Note that an external device (reader device, reader / writer (R / W) device, interrogator, mobile phone or computer having at least a reading function) outputs a signal having a unique frequency, and wirelessly with a wireless chip. It has a function to send and receive signals. As typical frequency bands for transmitting and receiving signals wirelessly, 13.56 MHz band, 860 to 960 MHz band, and 2.45 GHz band can be used.

In the handwriting recording system of the present invention, the size of the wireless chip destroyed by the writing pressure of the writing instrument and the arrangement of the wireless chips provided on the pressure sensitive paper determine the resolution of the handwriting. When a low-frequency radio signal is used, a large antenna is required, which increases the size of the radio chip and lowers the resolution of handwriting that can be detected with pressure-sensitive paper. On the other hand, when a high-frequency radio signal is used, the size of the radio chip can be reduced because the antenna can be miniaturized, and the resolution of handwriting that can be detected with pressure-sensitive paper is increased. For example, when comparing a wireless chip that transmits and receives a 900 MHz wireless signal with a wireless chip that transmits and receives a 2.45 GHz wireless signal, the latter is two-fifths the size of the former. In addition, it is preferable to obtain | require the required resolution | decomposability and the frequency band to be used with the front-end | tip shape and size of a writing instrument.

The m × n wireless chips constituting the pressure sensitive paper 101 are arranged in m rows and n columns as shown in FIG. 1B, for example. Although the m × n wireless chips in FIG. 1B are arranged in a grid, the arrangement method of the wireless chips is not limited to this. The wireless chip may be formed as an arbitrary n-gon, circle, or ellipse and arranged in a polygonal lattice (see FIGS. 2A, 2B, and 2C), or may be arranged irregularly ( (See FIG. 2D).

The external device 102 repeatedly outputs the handwriting detection signal 104 m × n times. The timing at which the external apparatus 102 transmits the handwriting detection signal 104 is controlled by the information processing apparatus 103.

The wireless chip has a function of receiving a handwriting detection signal 104 transmitted from the external device 102 and transmitting a response signal 105 generated by receiving the handwriting detection signal 104. FIG. 3 is a block diagram showing a basic configuration of a wireless chip according to the present invention. The wireless chip 300 in FIG. 3 includes an antenna circuit 301, a storage unit 302, and a signal processing circuit 303.

As shown in FIG. 3, a signal is input from the antenna circuit 301 to the signal processing circuit 303, and the signal processing circuit 303 outputs a signal to the antenna circuit 301 based on the signal output from the storage unit 302. The antenna circuit 301 is a circuit for receiving a signal from the outside and transmitting the signal to the outside. That is, the handwriting detection signal 104 from the external device 102 shown in FIG. 1B is received by the antenna circuit 301, and the response signal 105 is transmitted from the antenna circuit 301.

The storage unit 302 has a function of outputting coordinate data to the signal processing circuit 303 based on a command input from the signal processing circuit 303. Therefore, the storage unit 302 includes a memory controller circuit and a memory circuit. The memory controller circuit has a function of reading coordinate data from the memory circuit based on an instruction input from the signal processing circuit 303 and outputting the coordinate data to the signal processing circuit 303.

The storage units of the m × n wireless chips arranged in m rows and n columns shown in FIG. 1B store different unique coordinate data. Unique coordinate data is written in the storage unit of each wireless chip during pressure-sensitive paper formation, during wireless chip formation, or after pressure-sensitive paper formation. For convenience of explanation, it is assumed that coordinate data “m, n” has already been written in the storage unit of the wireless chip of m rows and n columns.

The signal processing circuit 303 includes means for processing the handwriting detection signal 104 received from the outside via the antenna circuit 301. Specifically, it has a determination circuit that determines whether or not to respond to coordinate data according to the content of the handwriting detection signal 104 and sends a command to the storage unit 302.

The antenna circuit 301 may have any antenna shape. As a signal transmission method applied to the antenna circuit 301, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The practitioner may select an appropriate transmission method in consideration of the intended use, and an antenna suitable for the transmission method may be provided.

For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a transmission method, a conductive film functioning as an antenna is formed in a ring shape (for example, an electromagnetic induction due to a change in electric field density). , Loop antenna), and spiral (for example, spiral antenna). When a microwave system (for example, UHF band (860 to 960 MHz band, 2.45 GHz band, etc.) is applied as a transmission system, a conductive film that functions as an antenna in consideration of the wavelength of radio waves used for signal transmission. The conductive film functioning as an antenna can be formed into, for example, a linear shape (for example, a dipole antenna), a flat shape (for example, a patch antenna), or the like. The shape of the functional conductive film is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

Next, the operation of the handwriting recording system shown in FIG. 1 will be described using the flowchart shown in FIG. 4 and FIG. The number of semiconductor devices is not limited to m × n in the present invention, but for convenience of explanation, the number of semiconductor devices is limited to m × n and the flow of the handwriting recording system of the present invention will be described. To do. This is the same for the other embodiments.

First, the external device 102 outputs a handwriting detection signal 411 including coordinate data “1, 1” in order to confirm the destruction state of the first wireless chip 501 in the first row and the first column (step S401). The first wireless chip 501 receives the handwriting detection signal 411 by the antenna circuit 301 (step S402).

The handwriting detection signal 411 received by the antenna circuit 301 is output to the signal processing circuit 303. When a signal is input from the antenna circuit 301, the signal processing circuit 303 sends a command to the storage unit 302, acquires coordinate data stored in the storage unit 302, and is included in the signal input from the antenna circuit 301. Compare with the coordinate data (step S403). When the comparison results in a match, the signal processing circuit 303 transmits a response signal 421 to the external device 102 via the antenna circuit 301 (step S404), and ends the process (step S405). On the other hand, if they do not match, the process is terminated as it is (step S405).

The external device 102 determines whether or not the response signal 421 from the first wireless chip 501 has been received (step S406). As a result of the determination, if reception is possible, information that the first wireless chip 501 has not been destroyed is recorded (step S407), and the process ends. On the other hand, if it cannot be received, information that the first wireless chip 501 is destroyed is recorded (step S408), and the process ends.

Note that if the antenna circuit 301 of the first wireless chip 501 is destroyed or the connection portion between the antenna circuit 301 and the signal processing circuit 303 is destroyed, step S402 cannot be executed and the process ends as it is (route). 511). Similarly, if the signal processing circuit 303 or the storage unit 302, or the connection between the signal processing circuit 303 and the storage unit 302 has been broken, step S403 cannot be executed, and the processing ends as it is (path 512).

Therefore, Step S404 is executed and the external device 102 receives the response signal 421 only when the electrical circuit constituting the first wireless chip 501 is not destroyed at all and everything is normal.

Further, step S401 to step S408 may be repeated any number of times for the first wireless chip 501. By repeating the operation a plurality of times, it is possible to prevent malfunctions such as accidental radio wave conditions and poor communication.

The operations from step S401 to step S408 are sequentially performed by the second wireless chip 502 to the m × n wireless chip 503, and whether or not each wireless chip is destroyed is recorded. The timing at which the external device 102 communicates with the wireless chip can be controlled by a command from the information processing device 103.

As described above, when the wireless chip is destroyed, the wireless chip performs different operation states on the signal from the external device before and after the destruction (response signal from the destroyed wireless chip to the external device). Handwriting can be recorded using the fact that transmission is impossible).

The external device 102 transmits the measured wireless chip information to the information processing device 103 via the network. The information processing apparatus 103 records as handwriting information based on the damage information of the wireless chip transmitted from the external apparatus 102.

As described above, the handwriting on the pressure sensitive paper can be recorded by communicating with the external device using the pressure sensitive paper having a plurality of semiconductor devices. The administrator can know the handwriting by accessing the information processing apparatus 103.

By adopting the above-described configuration of the present invention, it is possible to construct a handwriting recording system that records information (for example, characters and graphics) indicating what information is written on the pressure-sensitive paper.

(Embodiment 2)
In this embodiment, a mode and a manufacturing method of a semiconductor device are described.

FIG. 6A is a schematic external view of the semiconductor device, and FIG. 6B shows a schematic top structure of the semiconductor device. Since the semiconductor device 1101 includes a circuit that performs wireless communication, the “semiconductor device 1101” is also referred to as a “wireless chip 1101”.

As shown in FIG. 6B, the wireless chip 1101 includes an antenna 1111 for receiving and transmitting a signal, a circuit for analyzing the signal received by the antenna 1111, a circuit for generating power from the received signal, and the like. A signal processing circuit 1112 in which circuits are integrated.

Next, the structure and manufacturing method of the wireless chip 1101 will be described with reference to FIGS. FIG. 7 is a schematic cross-sectional view taken along the chain line ab in FIG. 6A, and FIG. 8 is a diagram illustrating the external structure of the wireless chip 1101.

The wireless chip 1101 includes a signal processing circuit 1112 and an element layer 1221 in which an antenna 1111 connected to the signal processing circuit 1112 is stacked over a flexible base material 1113 and a surface that seals the surface of the element layer 1221. A layer 1114 is stacked. That is, the element layer 1221 is sandwiched between the flexible base material 1113 and the sealing layer 1114. The antenna 1111 and the signal processing circuit 1112 are connected to each other through a connection terminal 1115.

In the signal processing circuit 1112, circuits using thin film transistors (hereinafter referred to as TFTs) are integrated. In FIG. 7, for the sake of convenience, the signal processing circuit 1112 is shown in a cross-sectional view of two top-gate thin film transistors. A stacked structure of the element layer 1221 and the sealing layer 1114 stacked on the flexible base material 1113 (hereinafter referred to as a stacked body 1222) is transferred from the substrate used at the time of manufacture to the flexible base material 1113. May be.

The element layer 1221 is manufactured by a manufacturing process of a thin film transistor. The side surface of the element layer 1221 is a stacked film of insulating films formed when the antenna 1111 and the signal processing circuit 1112 are manufactured. For example, as shown in FIG. 8, in the element layer 1221, the antenna 1111 and the signal processing circuit 1112 have bottom portions (for convenience, a surface on the lower side when the element layer 1221 is formed is referred to as a bottom portion). It is protected with a flexible base material 1113, the upper surface is sealed with a sealing layer 1114, and the side surface is covered with a laminated film including the first insulating film 1223 to the fourth insulating film 1226. With the wireless chip 1101 having such a stacked structure, the wireless chip 1101 is made thin and flexible while ensuring water resistance.

Next, a method for manufacturing the wireless chip 1101 will be described with reference to FIGS. Note that a case where a wireless chip is manufactured by providing an element such as a thin film transistor over a supporting substrate and then transferring it to a flexible substrate is described here. In this embodiment, the case where a plurality of wireless chips are formed from one substrate is described. Here, for convenience of explanation, an example in which a wireless chip of 4 × 3 is formed on one substrate is shown, but the present invention is not limited to this. In the following description, FIGS. 11 and 12 are schematic views of top views, and FIGS. 9 and 10 are schematic views of cross-sectional views taken along line AB in FIGS. 11 and 12.

A substrate 1431 for manufacturing the element layer 1221 is prepared. As the substrate 1431, a substrate having rigidity necessary for manufacturing a thin film transistor and heat resistance that can withstand a process temperature is selected. For example, as the substrate 1431, a glass substrate, a quartz substrate, a silicon substrate, a metal substrate, or a stainless steel substrate can be used.

A peeling layer 1432 is formed on the surface of the substrate 1431. The peeling layer 1432 is a layer formed in order to peel the stacked body 1222 from the substrate 1431. A first insulating film 1223 that forms a base insulating film of the thin film transistor is formed on the surface of the separation layer 1432. The first insulating film 1223 is a single layer film selected from silicon oxide, silicon nitride, silicon nitride oxide (SiOxNy), diamond-like carbon, aluminum nitride (AlN), etc., in order to prevent contamination of the signal processing circuit 1112. It can be formed of a multilayer film. These films can be formed by CVD or sputtering (see FIGS. 9A and 11A).

A semiconductor film 1433 is formed over the first insulating film 1223, and a second insulating film 1224 is formed so as to cover the semiconductor film 1433 (see FIG. 9B). The semiconductor film 1433 is a semiconductor layer in which a channel formation region and an impurity region of the TFT are formed. In this embodiment, since the TFT has a top gate structure, the second insulating film 1224 functions as a gate insulating film. The second insulating film 1224 is a single-layer film or a multilayer film of silicon oxide or silicon nitride oxide (SiOxNy), and the thickness may be in the range of 10 nm to 60 nm. These insulating films can be formed by a CVD method or a sputtering method.

The semiconductor film 1433 can be formed using silicon, germanium, or a compound of silicon and germanium (silicon germanium). In order to form a TFT with high electric field mobility, a crystalline semiconductor film is preferably used as the semiconductor film 1433. In order to form a crystalline semiconductor film, an amorphous semiconductor film may be formed and crystallized by applying light energy or thermal energy to the amorphous semiconductor film.

For example, in order to form amorphous silicon, a film may be formed by a CVD method using a source gas obtained by diluting a silane (SiH ₄ ) gas with hydrogen. Alternatively, it can be formed by a sputtering method using a target made of silicon. Amorphous germanium can be formed by a CVD method using a source gas obtained by diluting a germane (GeH ₄ ) gas with hydrogen, or by a sputtering method using a target made of germanium. A membrane can also be formed. In order to form amorphous silicon germanium, a film can be formed by a CVD method using a source gas in which silane (SiH ₄ ) gas and germane (GeH ₄ ) gas are mixed at a predetermined ratio and diluted with hydrogen. Alternatively, a film can be formed by sputtering using two types of targets, silicon and germanium.

In the film formation by the CVD method, a rare gas such as helium gas, fluorine gas, Ar, Kr, or Ne can be added to the source gas in addition to hydrogen gas. Further, instead of silane (SiH ₄ ) gas, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF ₄ or the like can be used as the source gas. Alternatively, the crystalline semiconductor film can be directly formed over the first insulating film 1223 by plasma CVD using the above source gas.

As a method for crystallizing an amorphous semiconductor film, a method of irradiating a laser beam, a method of irradiating infrared rays, a method of heating by an electric furnace, an element that promotes crystallization of a semiconductor is added and heated. Examples thereof include a crystallization method.

As a laser used for crystallization, any of a continuous wave laser (CW laser) and a pulsed laser (pulse laser) can be used. Examples of a gas laser suitable for crystallization include an Ar laser, a Kr laser, and an excimer laser. If it is a solid-state laser, a glass laser, a ruby laser, an alexandrite laser, and a Ti: sapphire laser, YAG containing Yd, YVO ₄ containing a dopant (eg, Nd, Yb, Cr, Ti, HO, Er, Tm, Ta), YVO ₄ , A laser using a crystal such as YAlO ₃ , GdVO ₄ , and forsterite (Mg ₂ SiO ₄ ) as a medium can be given.

In order to crystallize an amorphous semiconductor, not only the fundamental wave of the beam oscillated from these lasers but also the second to fourth harmonic beams of the fundamental wave can be irradiated. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. Energy density of the laser is required 0.01 mW / cm ² or more 100 MW / cm ² or less, preferably in the range of a 0.1 MW / cm ² or more 10 MW / cm ² or less. The scanning speed may be in the range of 10 cm / sec to 200 cm / sec.

A solid-state laser, an Ar ion laser, and a Ti: sapphire laser using the above crystal as a medium, such as YAG, can continuously oscillate. It is also possible to cause pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation or mode synchronization. When a laser beam is oscillated at an oscillation frequency of 10 MHz or more, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Unlike the case of using a pulsed laser with a low oscillation frequency, the solid-liquid interface generated by irradiating the laser beam can be moved continuously by scanning the laser beam, so it grows longer in the scanning direction. Crystal grains can be obtained.

Alternatively, the amorphous semiconductor film can be crystallized by irradiating infrared light, visible light, or ultraviolet light using a lamp as a light source instead of a laser. In this case, any one of infrared light, visible light, and ultraviolet light, or a combination thereof can be used. In this case, a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp is typically used as the lamp. The lamp lighting time is in the range of 1 second to 60 seconds, preferably 30 seconds to 60 seconds, and light irradiation by the lamp is repeated 1 to 10 times, preferably 2 to 6 times. The light emission intensity of the lamp is appropriately set depending on the material and film thickness of the amorphous semiconductor. For example, the semiconductor film is instantaneously heated at a heating temperature of 600 ° C. to 1000 ° C.

A method of crystallization using an element that promotes crystallization of an amorphous semiconductor film is suitable for crystallization of an amorphous silicon film. By introducing an element that promotes crystallization into an amorphous silicon film and performing laser beam irradiation or heat treatment at 500 ° C. to 600 ° C., crystalline silicon having high continuity of crystal grains at grain boundaries is obtained. be able to. Elements that promote crystallization of silicon include iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), One or more elements selected from platinum (Pt), copper (Cu), and gold (Au) can be used.

The means for introducing these elements into the amorphous silicon is not particularly limited as long as the element can be present on the surface of the amorphous silicon or inside thereof. For example, a sputtering method, a CVD method, a plasma processing method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and the concentration of an element introduced into amorphous silicon can be easily adjusted. In order to apply the solution, it is preferable to improve the wettability of the surface of the amorphous silicon in order to spread the solution over the entire surface of the amorphous silicon. In order to improve wettability, it is desirable to form an extremely thin oxide film of 10 nm or less on the surface of amorphous silicon. Such an extremely thin oxide film can be formed by irradiation with UV light in an oxygen atmosphere, thermal oxidation, treatment with hydrogen peroxide, treatment with ozone water containing hydroxy radicals, or the like.

Since the element used for crystallization deteriorates the characteristics of an element such as a TFT, it is desirable to remove the introduced element from the silicon film after crystallization. The method will be described below.

First, by treating the surface of the crystalline silicon film with an aqueous solution containing ozone (typically ozone water), a barrier layer made of an oxide film (called chemical oxide) is formed on the surface of the crystalline semiconductor film to a thickness of 1 nm to 10 nm. The thickness is formed. The barrier layer functions as an etching stopper when only the gettering layer is selectively removed in a later step.

Next, a gettering layer containing a rare gas element is formed as a gettering site on the barrier layer. Here, a semiconductor film containing a rare gas element is formed as a gettering layer by a CVD method or a sputtering method. When forming the gettering layer, the sputtering conditions are adjusted as appropriate so that a rare gas element is added to the gettering layer. As the rare gas element, one or more selected from helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) can be used. Note that, during gettering, the metal element (for example, nickel) tends to move to a region having a high oxygen concentration, and thus the oxygen concentration contained in the gettering layer is, for example, 5 × 10 ¹⁸ m ⁻³ or more. Is desirable.

Next, the crystalline silicon film, the barrier layer, and the gettering layer are subjected to heat treatment (for example, heat treatment or treatment for irradiating intense light such as a laser) to perform gettering of the introduced element (for example, nickel). The element is removed from the crystalline silicon film to reduce the concentration in the crystalline silicon film.

Next, a first conductive layer 1434 is formed over the second insulating film 1224 (see FIG. 9C). Here, only the gate electrode of the TFT is illustrated as the first conductive layer 1434. Further, an impurity is added to the semiconductor film 1433, so that an n-type or p-type impurity region 1435 functioning as a source region or a drain region is formed. The addition of impurities may be performed before or after the formation of the first conductive layer 1434, or at both timings. By forming the impurity region 1435, a channel formation region 1436 is also formed in the semiconductor film 1433.

The conductive film included in the first conductive layer 1434 may be a single-layer conductive film or a multilayer conductive film. For the conductive film, for example, a metal composed of an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), and chromium (Cr), An alloy in which these elements are combined or a film made of a nitride of these elements can be used. Alternatively, germanium, silicon, a compound of silicon and germanium, or the like imparted with conductivity by adding a dopant such as phosphorus can be used. For example, the first conductive layer 1434 can be formed using a multilayer film in which the first layer is tantalum nitride (TaN) and the second layer is tungsten (W). These conductive films can be formed by a sputtering method, an evaporation method, a CVD method, or the like.

Next, a third insulating film 1225 is formed over the entire surface of the substrate 1431 (see FIG. 9D). A second conductive layer 1437 is formed over the third insulating film 1225. The third insulating film 1225 is an interlayer film that separates the first conductive layer 1434 and the second conductive layer 1437 between layers. As the insulating film 1225, an inorganic insulating film such as silicon oxide, silicon nitride, or silicon oxynitride (SiOxNy) can be used. Alternatively, an organic resin film such as polyimide or acrylic, or a film containing siloxane may be used. The organic resin may be photosensitive or non-photosensitive. The third insulating film 1225 can be a single layer structure or a multilayer structure made of these insulating materials. For example, the first layer is an inorganic insulating film made of silicon nitride, and the second layer is an organic resin film such as polyimide. Note that siloxane is a material having a skeleton structure formed of a bond of silicon (Si) and oxygen (O), and an organic group (for example, an alkyl group or aromatic hydrocarbon) is used as a substituent. Further, the substituent may contain a fluoro group.

As shown in FIG. 14 (P4), the second conductive layer 1437 constitutes a wiring, an electrode, and the like of the signal processing circuit 1112. Here, only the wiring connected to the TFT and the terminal portion for connecting the connection terminal 1115 and the signal processing circuit 1112 are illustrated. Further, before the second conductive layer 1437 is formed, the second insulating film 1224 and the third insulating film 1437 are connected to connect the second conductive layer 1437 to the lower first conductive layer 1434 and the semiconductor film 1433. Contact holes are formed in the film 1225.

The second conductive layer 1437 may be a single-layer conductive film or a multi-layer conductive film. For the conductive film, for example, a metal composed of an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), and chromium (Cr), An alloy in which these elements are combined or a film made of a nitride of these elements can be used.

Next, a fourth insulating film 1226 is formed to stack the antenna 1111 over the signal processing circuit 1112 (see FIGS. 9E and 11B). The fourth insulating film 1226 is preferably formed as a planarization film that can smooth the unevenness due to the signal processing circuit 1112 and form a flat surface. Therefore, it is preferable to use an organic resin film such as polyimide or acrylic, or a film containing siloxane, which can be formed by applying a material or printing the material. The fourth insulating film 1226 is not a single layer, but has a multilayer structure in which these organic resins or the like are used as an upper layer and an inorganic insulating film such as silicon oxide, silicon nitride, or silicon oxynitride (SiOxNy) is used as a lower layer. it can. In addition, a contact hole is formed in the fourth insulating film 1226 in order to connect the connection terminal 1115 and the signal processing circuit 1112 before the antenna 1111 is stacked over the signal processing circuit 1112.

Thus, the signal processing circuit 1112 is formed in the element layer 1221. Note that the signal processing circuit 1112 is manufactured at the same time as the TFT, such as a resistor and a capacitor, in addition to the TFT. The signal processing circuit 1112 can be formed as thin as 3 μm to 5 μm. Note that the TFT structure of the signal processing circuit 1112 is not limited to the structure shown in FIG. For example, the TFT of the signal processing circuit 1112 can have a multi-gate structure in which a plurality of gates are provided for one semiconductor layer. Further, a high resistance region such as a low concentration impurity region can be formed in the semiconductor layer adjacent to the channel formation region. Further, a bottom gate structure can be used instead of the top gate structure.

Next, an antenna 1111 and a connection terminal 1115 are formed over the fourth insulating film 1226 (see FIGS. 9F and 11C). The antenna 1111 and the connection terminal 1115 can be formed by a method in which a conductive film is formed by a sputtering method or an evaporation method and then processed into a desired shape by etching, or by a method using etching such as a screen printing method or a droplet discharge method. it can. In the former method, the thinner antenna 1111 and the connection terminal 1115 can be manufactured. Copper, silver, gold, aluminum, titanium, or the like is used for the antenna 1111 and the connection terminal 1115. There is no particular limitation on the manufacturing method, and a sputtering method, a screen printing method, a droplet discharge method, or the like can be used.

After the antenna 1111 and the connection terminal 1115 are formed, a sealing layer 1114 for sealing the surface of the element layer 1221 is formed as illustrated in FIG. The sealing layer 1114 is formed in order to suppress damage to the element layer in the peeling process described later and to protect the element layer from the paper making process. For the sealing layer 1114, it is preferable to select a material with a simple forming means. As a material having all these conditions, it is preferable to form the sealing layer 1114 with a resin. As the resin used for the sealing layer 1114, for example, a thermosetting resin or a photocurable resin (a UV curable resin or a visible light curable resin) is preferable, and an epoxy resin can be given as a resin material.

By using an epoxy resin as the sealing layer 1114, the flatness of the surface of the sealing layer 1114 can be improved, and damage to the element layer 1221 can be suppressed in the subsequent peeling process or papermaking process, or can be protected from dust. .

Through the above steps, the stacked body 1222 is manufactured using the substrate 1431.

Next, the stacked body 1222 is peeled from the substrate 1431 and transferred to a flexible base material. The following steps will be described with reference to FIG.

First, an opening 1540 is formed in the stacked body 1222 (see FIGS. 10A and 12A). The opening 1540 is formed so as to reach the peeling layer 1432 or penetrate the peeling layer 1432. A method of forming the opening 1540 includes a method of physically cutting the laminated body 1222 with a dicer or a wire saw, a method of cutting the laminated body 1222 using laser ablation irradiated with a laser beam, and a method of forming by etching. Can be adopted. Among these, the cutting method by laser ablation is preferable because it is smaller than other methods to give an impact to the antenna 1111 and the signal processing circuit 1112. Note that the opening 1540 may be provided in a portion where an element such as a thin film transistor is avoided.

In addition, by forming the opening 1540, the side surface of the stacked body 1222 is formed. As shown in FIG. 13, the side surface of the stacked body 1222 includes a stacked film of insulating films 1223 to 1226 formed when the element layer 1221 is manufactured, and a sealing layer 1114. Further, since the stacked body 1222 is divided together with the sealing layer 1114, the side surface of the stacked film formed of the insulating films 1223 to 1226 and the side surface of the sealing layer 1114 can be formed to be aligned.

Next, a support base material 1541 is attached to the upper surface of the sealing layer 1114 (see FIG. 10B). The support base material 1541 is a base material for supporting the multilayer body 1222 until the multilayer body 1222 is transferred to the flexible base material 1113. Therefore, a support base 1541 that is easy to remove from the laminate 1222 is selected. For example, as the support base material 1541, a material having a property that the adhesive strength is strong in a normal state and the adhesive strength is weakened by applying heat or irradiating light may be used. For example, it is preferable to use a thermal peeling tape whose adhesive strength is weakened by heating or a UV peeling tape whose adhesive strength is weakened by irradiating ultraviolet light. Moreover, a weak viscous tape etc. with weak adhesive force in a normal state can be used.

Next, the bonding force of molecules at the interface between the inside of the peeling layer 1432 and the layer in contact with the peeling layer 1432 is weakened. Thus, the laminate 1222 can be separated from the substrate 1431 by applying a force to the support base 1541.

As a method for weakening the molecular binding force in the inside of the release layer 1432, a method in which a part having a weak molecular binding force is formed in the release layer 1432 in advance, or after a release layer 1432 is formed, There is a method of processing that weakens the bond strength. As the former method, a metal layer (Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Ru, Rh, Pd, Os, Ir) is formed as a peeling layer, An oxide layer of the metal layer is stacked thereon. As a result, a portion having a weak atom binding force can be formed. The oxide layer can be formed by oxidizing the surface of the metal layer. For example, the oxide layer can be formed by performing a thermal oxidation process, an oxygen plasma process, an oxidation process using a solution having strong oxidizing power such as ozone water, or the like. Alternatively, the surface of the metal layer can be oxidized by forming an insulating film containing oxygen such as silicon oxide or silicon oxynitride on the surface of the metal layer. Note that as a legal system for weakening the bonding force of molecules after the latter release layer 1432 is formed, there is a method of irradiating a laser beam. For example, as the separation layer 1432, amorphous silicon containing hydrogen is used. By irradiating the amorphous silicon with a laser, contained hydrogen is released, so that a void is generated and the peeling layer 1432 can be weakened.

Further, a method of performing wet etching or dry etching on the peeling layer 1432 can be employed. In this case, the separation layer 1432 may be formed using a metal such as W, Mo, Nb, or Ti, an alloy thereof, a metal compound thereof (eg, oxide or nitride), silicon, or the like. As the etchant, a gas or liquid containing halogen fluoride can be used. For example, there are chlorine trifluoride (ClF ₃ ), nitrogen trifluoride (NF ₃ ), bromine trifluoride (BrF ₃ ), and hydrogen fluoride (HF). Note that the peeling treatment of the peeling layer 1432 is performed before the supporting base material 1541 is attached.

In addition, by forming the opening 1540 as shown in FIG. 10A, a force that the sealing layer 1114 (resin layer) tries to shrink is applied to the release layer 1432, and the release layer 1432 and the first insulation are formed. Separation can proceed at the interface of the film 1223 or inside the separation layer 1432.

The side surface of the stacked body 1222 is a surface formed when the sealing layer 1114 and the element layer 1221 are divided, and is formed so that the side surface of the element layer 1221 and the side surface of the sealing layer 1114 are aligned. As a result of forming the opening 1540, the side surface of the stacked body 1222 is a stacked film of insulating films 1223 to 1226 and a sealing layer 1114 formed when the antenna 1111 and the signal processing circuit 1112 are manufactured. The laminated film protects the antenna 1111 and the signal processing circuit 1112 from moisture.

Next, the substrate 1431 is separated from the stacked body 1222 (see FIG. 10C).

Next, the flexible base material 1113 is fixed to the bottom of the stacked body 1222 from which the substrate 1431 is peeled (the bottom of the element layer 1221) (see FIGS. 10D and 12B). The flexible substrate 1113 has a laminated structure of a substrate film and an adhesive layer. The base film is made of a resin material (polyester, polypropylene, polyvinyl chloride, polystyrene, polyacrylonitrile, polyethylene terephthalate, polyamide). As the adhesive synthetic resin film, acrylic resin, epoxy resin, vinyl acetate resin, vinyl copolymer resin, urethane resin, or the like can be used. Among them, it is preferable to select a thermoplastic resin, a curable resin, or a photocurable resin that is cured by irradiation with UV light or visible light.

Finally, the substrate 1431 is peeled off from the stacked body 1222, and the plurality of wireless chips are individually divided (see FIG. 12C), whereby the wireless chip 1101 shown in FIGS. 7 and 8 is completed. As shown in FIG. 8, the upper surface of the wireless chip 1101 is protected by a sealing layer 1114. By providing the sealing layer 1114, it is not necessary to protect with the flexible base material 1113 like the bottom. Therefore, it is easy to make the wireless chip 1101 thinner. The thickness of the sealing layer 1114 is at least about 20 to 30% thicker than the thickness of the antenna 1111. The sealing layer 1114 can ensure the smoothness of the top surface of the wireless chip 1101.

Note that a plurality of wireless chips may be used in a connected state without being divided (FIG. 12B). In this case, when providing a plurality of wireless chips, it is possible to save the trouble of arranging the individual wireless chips side by side.

The bottom of the wireless chip 1101 is covered with a flexible base material 1113. The flexible base material 1113 has a function of smoothing the surface from which the substrate 1431 is removed when the stacked body 1222 is manufactured. In the flexible substrate 1113, the thickness of the substrate film is 2 μm or more, and the total thickness of the flexible substrate 1113 (the total thickness of the substrate film and the adhesive layer) does not exceed 20 μm. A thin substrate can be used.

Note that the surface of the base film of the flexible base 1113 may be coated with silicon dioxide (silica) powder. The coating can maintain waterproofness even in a high temperature and high humidity environment. The surface of the base film may be coated with a conductive material such as indium tin oxide. Since the coated material can prevent the base film from accumulating charges, the signal processing circuit 1112 can be protected from static electricity. The surface may be coated with a carbon-based material (for example, diamond-like carbon). The coating increases the strength and can suppress deterioration and destruction of the semiconductor device.

In addition, the side surface of the stacked body 1222 includes an element layer 1221 including insulating films 1223 to 1226 and a sealing layer 1114 formed when the stacked body 1222 is manufactured. That is, by configuring the side surface of the wireless chip 1101 with the flexible base material 1113, the insulating film 1223 to the insulating film 1226, and the sealing layer 1114, the wireless chip 1101 is secured with water resistance required in the paper making process, The wireless chip 1101 can be as thin as 30 μm or less.

Note that there is no particular limitation on the shape of the antenna 1111 in the wireless chip 1101 illustrated in FIG. As a signal transmission method applied to the signal processing circuit 1112 in the wireless chip 1101, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be selected as appropriate by the practitioner in consideration of the intended use, and an antenna having an optimal length and shape may be provided according to the transmission method. When an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a transmission method, a conductive film that functions as an antenna is formed into a ring shape (for example, a loop) in order to use electromagnetic induction due to a change in electric field density. Antenna) or spiral (for example, spiral antenna).

In addition, when a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a transmission method, a conductive function that functions as an antenna in consideration of the wavelength of a radio wave used for signal transmission. What is necessary is just to set the length and shape of a film | membrane suitably. The conductive film functioning as an antenna can be formed into, for example, a linear shape (for example, a dipole antenna), a flat shape (for example, a patch antenna), or the like. Further, the shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

(Embodiment 3)
In the present embodiment, a mode of forming pressure-sensitive paper in which a semiconductor device is incorporated will be described.

13A is a schematic external view of a pressure-sensitive paper in which a plurality of semiconductor devices are incorporated, and FIG. 13B is a schematic cross section taken along a chain line ab in FIG. 13A. FIG. As shown in FIG. 13B, the semiconductor device 2101 is incorporated in a paper layer of a paper base 2103 having at least one layer. Since the semiconductor device 2101 includes a circuit that performs wireless communication, the “semiconductor device 2101” is also referred to as a “wireless chip 2101”.

A method for embedding the wireless chip 2101 into the paper base material 2103 will be described with reference to a cross-sectional view shown in FIG. The pressure-sensitive paper of this embodiment is formed as a multilayer paper, and the wireless chip 2101 is engraved between the first paper and the second paper base.

First, fibers (also referred to as pulp) are taken out from the crushed paper raw material chips. Pulp that is mechanically refined and taken out (also referred to as mechanical pulp) or pulp that is taken out chemically by chemicals (also called chemical pulp) can be used.

Next, the paper stock in which the pulp is dissolved in water is uniformly stirred, and the paper stock is made to flow on a net to cause moisture to fall off by gravity to form a wet paper web 2251 (see FIG. 14A). By repeating this operation according to the required paper thickness, the paper thickness can be freely adjusted.

In order to improve the strength of the paper, starch such as phosphate esterified starch or cationic polyacrylamide is sprayed on one surface of the wet paper 2251. After that, the wireless chip 2101 is arranged on the surface sprayed with starch or the like as a paper reinforcing agent (see FIG. 14B).

A separately prepared wet paper 2252 is placed on the wet paper 2251, and the wet paper 2251 and the wet paper 2252 are combined (see FIG. 14C). It is desirable that the surface of the wireless chip 2101 be hydrophilic so that the wireless chip 2101 is compatible with the wet paper 2251 and 2252. Therefore, for example, it is preferable that the surface of the sealing layer 1114 be subjected to plasma treatment, corona treatment, or the like when the wireless chip 2101 is formed to be hydrophilic. Note that the timing for processing the surface of the sealing layer 1114 may be either before or after the laminate 1222 is divided.

After the wet paper 2251 and the wet paper 2252 are made together, the pressure sensitive paper 2102 in which the wireless chip 2101 is made between the first paper base 2253 and the second paper base 2254 is obtained by drying. It is formed (see FIG. 14D). Note that since the antenna 1111 of the wireless chip 2101 and the conductive layer of the signal processing circuit 1112 are formed of a highly reflective material, if the color of the pressure-sensitive paper 2102 is white or thin, the embedded wireless chip 2101 may stand out. In order to prevent the wireless chip 2101 from being noticeable, unevenness may be formed on the surface of the antenna 1111 or the wiring. The unevenness generated on the surface causes the light to be irregularly reflected on the surface of the antenna 1111 or the conductive layer, and the surface appears to be clouded. Therefore, there is an effect of making the wireless chip 2101 inconspicuous. For example, when aluminum is heated, irregularities are produced on the surface. Further, in order to prevent the wireless chip 2101 from being noticeable, the wet paper may be formed thick beforehand.

In FIG. 14, two layers of pressure sensitive paper are used, but three or more layers of pressure sensitive paper may be used. As a method of making the wireless chip 2101 into paper, a method of making paper in multiple layers is preferable. This is because it is easy to control the position where the wireless chip 2101 is drawn. For example, in another method in which the wireless chip 2101 is submerged in a paper raw material dissolved in water, it is difficult to control the position in the thickness direction. In order to control the position in the thickness direction, the specific gravity of the wireless chip 2101 and the weight of the paper are measured. It is difficult to incorporate the wireless chip into various types of paper. On the other hand, in the case of multilayer papermaking, position control in the thickness direction is easy.

Further, as shown in FIG. 15A, the wet paper web formation, paper making, and drying may be performed consistently. The wireless chips 2101 are arranged on the wet paper 2251 obtained from the paper material agitation tank 2301, and the wet paper 2252 obtained from the paper material agitation tank 2302 is combined with the wet paper 2251 through the rollers 2303 and 2304, and the dryer 2305 is combined. And dried as roll pressure sensitive paper 2307 through a roller 2306. Note that the first cross section 2311, the second cross section 2312, the third cross section 2313, and the fourth cross section 2314 in FIG. 15A correspond to FIGS. 14A to 14D, respectively. Further, as shown in FIG. 15B, the formed pressure sensitive paper may be rolled and stored as roll pressure sensitive paper 2307.

In this example, an example in which the wireless chip provided on the writing surface is broken by writing pressure in the structure of the pressure-sensitive paper of the present invention described in Embodiment Mode 3 will be described with reference to FIG.

FIG. 16A is a schematic diagram for easy understanding of handwriting recording using pressure-sensitive paper. Pressure-sensitive paper 3101, pressure-sensitive paper cutting surface 3102, writing tool 3103, writing tool tip 3104, and handwriting 3105 written by the writing tool. A wireless chip 3106 and a wireless chip 3107 destroyed by a writing instrument are shown. FIG. 16B is a schematic view showing the cut surface of FIG. 16A from the vertical direction.

As shown in FIGS. 16A and 16B, the wireless chip is destroyed by the writing pressure of the writing tool tip 3104 moving on the pressure sensitive paper 3101. That is, the wireless chip at the place where the handwriting 3105 exists is destroyed. Further, as shown in FIG. 22, one wireless chip 3702 may be arranged on the pressure sensitive paper 3701, and the handwriting 3704 may be detected based on whether or not the wireless chip is broken by the writing pressure at the writing tool tip 3703. In order to reliably destroy the wireless chip, the size of the writing tool tip 3104 is preferably smaller than the wireless chip. For example, the pen tip of a ballpoint pen, which is a typical example of office writing instruments, is 1 mm, 0.7 mm, 0.5 mm, 0.3 mm, 0.25 mm, and 0.18 mm. The chip size is preferably larger than these sizes.

This embodiment can be freely combined with any of the other embodiments in this specification.

In this example, an example in which the wireless chip provided on the writing surface is destroyed by writing pressure in the structure of the pressure-sensitive paper of the present invention described in Embodiment Mode 3 will be described with reference to FIGS.

FIGS. 17A to 17D are schematic diagrams for easy understanding of how the wireless chip is destroyed by writing pressure. The wireless chip 3202 constituting the pressure-sensitive paper 3201 and the sealing constituting the wireless chip 3202 are shown. A layer 3203, an antenna 3204, a connection terminal 3205, insulating films 3206 to 3209, a flexible base material 3210, a signal processing circuit 3211, and a TFT 3212 constituting the signal processing circuit 3211 are shown. FIG. 17A is a schematic diagram showing a wireless chip 3202 that has not been destroyed. FIGS. 17B to 17D show the wireless chip 3202 in which the antenna 3204 is destroyed, and the connection terminal 3205 is destroyed. 3 is a schematic diagram illustrating a wireless chip 3202 in which the TFT 3212 constituting the wireless chip 3202 and the signal processing circuit 3211 is destroyed.

As shown in FIGS. 17B to 17D, the wiring and the circuits constituting the wireless chip 3202 are destroyed by the writing pressure of the writing tool tip 3220 moving on the pressure sensitive paper 3201. In FIG. 17B, wiring that constitutes the antenna 3204 is subjected to brittle fracture and ductile fracture due to extreme stress due to writing pressure applied to a metal such as copper, silver, gold, aluminum, and titanium used for the antenna 3204. Shows an example in which is disconnected. FIG. 17C illustrates an example in which the connection terminal 3205 that connects the antenna 3204 and the signal processing circuit 3211 is destroyed. A portion connecting the antenna 3204 and the signal processing circuit 3211 is a portion formed by obtaining an etching process, and is easily damaged because of a large local distortion. FIG. 17D shows an example in which the TFT 3212 constituting the signal processing circuit 3211 is destroyed.

Note that, as shown in FIGS. 18A to 18C, the state of destruction varies depending on the size of the writing tool tip 3220 moving on the pressure sensitive paper 3201. When writing tools having the same writing pressure and different sizes of the writing tool tip 3220 are used, the pressure per unit area that the writing tool tip 3220 applies to the wireless chip 3202 decreases as the size of the writing tool tip 3220 increases. Therefore, in order to reliably destroy the wireless chip 3202 by writing pressure, it is preferable to design the wireless chip 3202 in consideration of the size of the writing tool tip 3220 and the writing pressure in advance.

In the configuration of the pressure sensitive paper in the present invention, the example in which the wireless chip is destroyed by the writing pressure is not limited to the above-described example, and any type may be used.

This embodiment can be freely combined with any of the other embodiments in this specification.

In this embodiment, the application of the pressure sensitive paper of the present invention will be described. The pressure-sensitive paper of the present invention is used as a so-called handwriting recording system that prevents forgery of information entered in various application forms, receipts, invoices, invoices, etc. and protects information, and reads the entered contents of the various documents wirelessly. I can do it.

In the present embodiment, an application example of the present invention and an example of a product to which these are attached will be described with reference to FIGS.

FIG. 19 is an example of a state of a completed product of the handwriting recording system according to the present invention. A receipt document is printed on pressure-sensitive paper and used as a receipt 3402. If such a receipt 3402 has a handwriting 3404 attached to the receipt document using, for example, a writing tool 3403, the external device 3406 reads information on the wireless chip destroyed by the writing pressure of the writing tool tip 3405. Recorded in the device 3407 as handwriting data. Unless the receipt person falsifies the handwriting record recorded in the information processing apparatus, fictitious receipt and counterfeit receipt can be prevented.

FIG. 20 is an example of a state of a completed product of the handwriting recording system according to the present invention. Pressure-sensitive paper is used as the election ballot 3501. For example, if the ballot 3501 is written on the ballot 3501 using the writing tool 3502 and put in the ballot box 3504, the external device 3505 and the information processing device 3506 are used to record the handwriting. Can be recorded together. Compared with the conventional electronic voting system, it is possible to vote using paper, so the voter's resistance can be reduced.

FIG. 21 is an example of a state of a completed product of the handwriting recording system according to the present invention. Use pressure sensitive paper as a luggage slip. The package slip 3601 is used by being attached to the delivery item 3602. For example, if a parcel delivery person uses a writing instrument 3603 to write a handwriting in the confirmation column 3604, and uses an external device 3605 and an information processing device 3606 to record the handwriting and deliver it to the recipient, It can be recorded in the information processing apparatus 3606 as a home delivery record that a person has delivered home. Conventionally, since it is necessary to input a delivery record directly to the information processing apparatus, training is necessary when the delivery person is not familiar with the method of using the information processing apparatus. However, since the handwriting recording system of the present embodiment can record using paper, it is not different from the conventional delivery system using paper, and the burden on the delivery person can be reduced.

As described above, the handwriting recording system of the present invention can be provided and used for any handwriting recording device.

This embodiment can be freely combined with any of the other embodiments of the present invention.

The block diagram explaining the structure of the handwriting recording system of this invention, and transmission / reception of a signal. FIG. 6 is a diagram showing an example of arrangement of semiconductor devices in the pressure-sensitive paper of the present invention. 1 is a block diagram illustrating a configuration of a semiconductor device that performs wireless communication according to the present invention. The flowchart figure explaining operation | movement of the handwriting recording system of FIG. FIG. 2 is a block diagram specifically explaining signal transmission / reception of the handwriting recording system of FIG. 1. 1 is an external view of a semiconductor device of the present invention. FIG. 11 illustrates a structure of a semiconductor device of the present invention. FIG. 6 illustrates a stacked structure of a semiconductor device of the present invention. 8A to 8D illustrate a method for manufacturing a semiconductor device of the present invention. 8A to 8D illustrate a method for manufacturing a semiconductor device of the present invention. 8A to 8D illustrate a method for manufacturing a semiconductor device of the present invention. 8A to 8D illustrate a method for manufacturing a semiconductor device of the present invention. 1 is a schematic view of a pressure-sensitive paper of the present invention (Embodiment 1). The figure explaining the manufacturing method of the pressure sensitive paper of this invention. FIG. 2 is an overview diagram for consistently producing the pressure-sensitive paper of the present invention. The figure which shows the example which records a handwriting in the pressure sensitive paper of this invention. 8A and 8B illustrate an example in which a semiconductor device of the present invention is destroyed. 8A and 8B illustrate an example in which a semiconductor device of the present invention is destroyed. The figure which shows the usage example of the pressure sensitive paper of this invention. The figure which shows the usage example of the pressure sensitive paper of this invention. The figure which shows the usage example of the pressure sensitive paper of this invention. The figure which shows the example which records a handwriting in the pressure sensitive paper of this invention.

Explanation of symbols

101 pressure sensitive paper 102 external device 103 information processing device 104 handwriting detection signal 105 response signal 300 wireless chip 301 antenna circuit 302 storage unit 303 signal processing circuit 411 handwriting detection signal 511 path 512 path 421 response signal 501 wireless chip 502 wireless chip 503 wireless Chip 1101 Semiconductor device 1101 Wireless chip 1111 Antenna 1112 Signal processing circuit 1113 Flexible base material 1114 Sealing layer 1115 Connection terminal 1221 Element layer 1222 Laminated body 1223 Insulating film 1224 Insulating film 1225 Insulating film 1226 Insulating film 1431 Substrate 1432 Peeling layer 1433 Semiconductor film 1434 Conductive layer 1435 Impurity region 1436 Channel formation region 1437 Conductive layer 1540 Opening portion 1541 Support base material 2101 Semiconductor device 2101 Wireless chip 2102 Pressure sensitive paper 103 Paper base 2251 Wet paper 2252 Wet paper 2253 Paper base 2254 Paper base 2301 Paper agitation tank 2302 Paper agitation tank 2303 Roller 2304 Roller 2305 Dryer 2306 Roller 2307 Roll pressure sensitive paper 2311 Cross section 2312 Cross section 2313 Cross section 2314 Cross section 3101 Pressure sensitive paper 3102 Cutting surface 3103 Writing tool 3104 Writing tool tip 3105 Handwriting 3106 Wireless chip 3107 Wireless chip 3201 Pressure sensitive paper 3202 Wireless chip 3203 Sealing layer 3204 Antenna 3205 Connection terminal 3206 Insulating film 3209 Insulating film 3210 Flexible substrate 3211 Signal processing circuit 3212 TFT
3220 Writing tool tip 3402 Receipt 3403 Writing tool 3404 Handwriting 3405 Writing tool tip 3406 External device 3407 Information processing device 3501 Voting paper 3502 Writing tool 3503 Candidate name 3504 Ballot box 3505 External device 3506 Information processing device 3601 Luggage slip 3602 Delivery item 3604 Confirmation column 3605 External device 3606 Information processing device 3701 Pressure sensitive paper 3702 Wireless chip 3703 Writing instrument tip 3704 Handwriting

Claims (8)

Incorporated into a paper layer of a paper base material having at least one layer, and having a semiconductor device provided on the writing surface of the paper base material,
The semiconductor device includes an antenna circuit that can communicate with an external device, a signal processing circuit, and a storage unit that stores solid identification information.
When writing pressure is applied to the semiconductor device provided on the writing surface of the paper base, at least one of the antenna circuit or the signal processing circuit is destroyed, so that the solid identification information of the storage unit is transmitted. Pressure-sensitive paper characterized by being impossible. A plurality of semiconductor devices that are incorporated in a paper layer of a paper base material having at least one layer and arranged in a matrix on the writing surface of the paper base material,
Each of the plurality of semiconductor devices includes an antenna circuit that can communicate with an external device, a signal processing circuit, and a storage unit that stores solid identification information.
When writing pressure is applied to the writing surface of the paper substrate, the semiconductor to which the writing pressure is applied is destroyed by destroying at least one of the antenna circuit or the signal processing circuit of the semiconductor device to which the writing pressure is applied. A pressure sensitive paper, characterized in that it is impossible to transmit the solid identification information stored in the storage unit of the apparatus. In claim 2,
The pressure sensitive paper, wherein the solid identification information is coordinate data on a writing surface of the paper base material. In any one of Claims 1 thru | or 3,
The pressure-sensitive paper, wherein the signal processing circuit includes a thin film transistor. In any one of Claims 1 thru | or 4,
The pressure sensitive paper, wherein the semiconductor device has flexibility. A semiconductor device incorporated in a paper layer of a paper base material having at least one layer and provided on a writing surface of the paper base material;
An external device capable of wirelessly communicating with the semiconductor device;
The semiconductor device includes an antenna circuit that can communicate with the external device, a signal processing circuit, and a storage unit that stores solid identification information.
When writing pressure is applied to the semiconductor device provided on the writing surface of the paper base, at least one of the antenna circuit or the signal processing circuit is destroyed, whereby the semiconductor device receives a signal from the external device. A handwriting recording system characterized by performing different operating states for the. A plurality of semiconductor devices that are incorporated in a paper layer of a paper base material having at least one layer and arranged in a matrix on the writing surface of the paper base material;
An external device capable of wirelessly communicating with the plurality of semiconductor devices;
The plurality of semiconductor devices each include an antenna circuit capable of communicating with the external device, a signal processing circuit, and a storage unit storing solid identification information.
When writing pressure is applied to the writing surface of the paper substrate, the semiconductor to which the writing pressure is applied is destroyed by destroying at least one of the antenna circuit or the signal processing circuit of the semiconductor device to which the writing pressure is applied. A handwriting recording system, wherein the apparatus performs different operation states on signals from the external apparatus. In claim 7,
The handwriting recording system, wherein the solid identification information is coordinate data on a writing surface of the paper base material.

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