JP2008187894A5 - - Google Patents
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- Publication number
- JP2008187894A5 JP2008187894A5 JP2008104219A JP2008104219A JP2008187894A5 JP 2008187894 A5 JP2008187894 A5 JP 2008187894A5 JP 2008104219 A JP2008104219 A JP 2008104219A JP 2008104219 A JP2008104219 A JP 2008104219A JP 2008187894 A5 JP2008187894 A5 JP 2008187894A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- mos
- secondary battery
- rectifier bridge
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 7
Claims (2)
前記集積回路は、
交流電力の各相の電圧と上記２次電池の正極電圧との大小関係、および前記各相の電圧と２次電池の負極電圧との大小関係を比較する比較回路と、
相電圧が２次電池の正極電圧より高い条件で、前記ＭＯＳ型整流ブリッジのハイサイド半導体素子のゲートに対し導通となるためのゲート信号を出力し、相電圧が２次電池の正極電圧とほぼ等しい電圧まで低くなると、前記ハイサイド半導体素子のゲートに非導通となるためのゲート信号を印加する、第１のゲート回路と、
前記ＭＯＳ型整流ブリッジのロウサイド半導体素子に対し、相電圧が２次電池の負極電圧より低くい条件で、導通となるためのゲート信号を出力し、相電圧が２次電池の負極電圧とほぼ等しい電圧まで高くなると非導通となるためのゲート信号を出力する第２のゲート回路と、を有することを特徴とするＭＯＳ整流装置。 A MOS type rectifier bridge having a high-side semiconductor element and a low-side semiconductor element; and an integrated circuit for controlling the MOS type rectifier bridge, wherein AC power supplied to the MOS type rectifier bridge is a secondary battery. A MOS rectifier that converts DC power to be supplied to
The integrated circuit comprises:
A comparison circuit for comparing the magnitude relationship between the voltage of each phase of the AC power and the positive voltage of the secondary battery, and the magnitude relation between the voltage of each phase and the negative voltage of the secondary battery;
Under the condition that the phase voltage is higher than the positive voltage of the secondary battery, a gate signal for making the MOS type rectifier bridge conductive to the gate of the high-side semiconductor element is output, and the phase voltage is almost equal to the positive voltage of the secondary battery. A first gate circuit that applies a gate signal for non-conduction to the gate of the high-side semiconductor element when the voltage is reduced to an equal voltage;
A gate signal for conduction is output to the low-side semiconductor element of the MOS rectifier bridge under the condition that the phase voltage is lower than the negative voltage of the secondary battery, and the phase voltage is substantially equal to the negative voltage of the secondary battery. And a second gate circuit that outputs a gate signal for becoming non-conductive when the voltage is increased.
前記集積回路は、
供給された交流電力に基づき、前記ＭＯＳ型整流ブリッジを構成するハイサイドＭＯＳＦＥＴやロウサイドＭＯＳＦＥＴのオンオフ動作を制御するハイサイドおよびロウサイド駆動回路と、
前記交流電力の電圧を直流電圧に変換する第２の整流回路と、
前記第２の整流回路の出力に基づき過電圧を検知するモニタ回路と、を備え、
前記モニタ回路の出力に基づき前記交流電力の発生を制御するための制御信号を出力することを特徴とするＭＯＳ整流装置。 A MOS-type rectifier bridge having a high-side semiconductor element and a low-side semiconductor element, and an integrated circuit for controlling the MOS-type rectifier bridge, and converting AC power supplied to the MOS-type rectifier bridge into DC power A MOS rectifier for supplying to the secondary battery,
The integrated circuit comprises:
A high-side and low-side drive circuit that controls the on / off operation of the high-side MOSFET and the low-side MOSFET constituting the MOS type rectifier bridge based on the supplied AC power ;
A second rectifier circuit for converting the voltage of the AC power into a DC voltage;
A monitor circuit for detecting an overvoltage based on the output of the second rectifier circuit,
A MOS rectifier that outputs a control signal for controlling generation of the AC power based on an output of the monitor circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008104219A JP4696136B2 (en) | 2006-06-01 | 2008-04-14 | MOS rectifier |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006152960A JP4284333B2 (en) | 2001-08-29 | 2006-06-01 | MOS rectifier type alternator |
| JP2008104219A JP4696136B2 (en) | 2006-06-01 | 2008-04-14 | MOS rectifier |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006152960A Division JP4284333B2 (en) | 2001-08-29 | 2006-06-01 | MOS rectifier type alternator |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008187894A JP2008187894A (en) | 2008-08-14 |
| JP2008187894A5 true JP2008187894A5 (en) | 2009-03-12 |
| JP4696136B2 JP4696136B2 (en) | 2011-06-08 |
Family
ID=70049228
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008104219A Expired - Fee Related JP4696136B2 (en) | 2006-06-01 | 2008-04-14 | MOS rectifier |
| JP2008104220A Expired - Fee Related JP4696137B2 (en) | 2006-06-01 | 2008-04-14 | MOS rectifier |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008104220A Expired - Fee Related JP4696137B2 (en) | 2006-06-01 | 2008-04-14 | MOS rectifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP4696136B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101991735B1 (en) * | 2011-05-19 | 2019-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor integrated circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3337805B2 (en) * | 1994-02-10 | 2002-10-28 | マツダ株式会社 | Alternator control device |
| JPH09163747A (en) * | 1995-12-01 | 1997-06-20 | Matsushita Electric Ind Co Ltd | Active filter |
| JP3491797B2 (en) * | 1995-12-05 | 2004-01-26 | 株式会社デンソー | Power generator for vehicles |
| JP3087955B2 (en) * | 1996-05-30 | 2000-09-18 | サンケン電気株式会社 | Three-phase converter device |
| JP2001186771A (en) * | 1999-10-15 | 2001-07-06 | Seiko Epson Corp | Chopper circuit, controlling method of chopper circuit, chopper-type charge circuit, electronic equipment, and clocking device |
-
2008
- 2008-04-14 JP JP2008104219A patent/JP4696136B2/en not_active Expired - Fee Related
- 2008-04-14 JP JP2008104220A patent/JP4696137B2/en not_active Expired - Fee Related
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