JP2008164586A5 - - Google Patents

Claims (9)

A sensor that detects a relative positional relationship between a movable element and a facing member provided at a distance from the movable element,
The opposing member has an impurity ion introduction part in an opposing part facing the movable element, or an adjacent part adjacent to the opposing part,
At least a part of the impurity ion introduction part is formed on a surface opposite to the surface facing the movable element, and electrical wiring is taken out from the surface opposite to the sensor. 2. The sensor according to claim 1, wherein, in the facing member, the impurity ion introduction part is insulated from its periphery by an insulating part. 3. The mover has a potential, and the impurity ion introduction part is a detection electrode that is formed in the facing portion and generates a capacitance between the mover and the mover. Sensor. The mover has a potential, and the impurity ion introduction portion is a source region and a drain region formed in the adjacent portion, and a field effect transistor is formed by the source region, the drain region, and the channel region of the opposite portion. 2. The sensor according to claim 1, wherein the sensor forms a structure. The movable element constitutes a detection vibrator, the opposing member constitutes a part of a reference vibrator, the detection vibrator is supported so as to be able to vibrate with respect to the reference vibrator, and the reference vibrator is a support substrate. Supported so that it can vibrate against
5. The Coriolis force generated by inputting the vibration of the reference vibrator and the angular velocity is detected by a change in a relative positional relationship between the detection vibrator and the reference vibrator. Sensor. A manufacturing method for manufacturing the sensor according to any one of claims 1 to 5,
A first step of preparing a substrate in which semiconductor layers and insulating layers are alternately laminated;
A second step of forming the mover by etching the first semiconductor layer of the substrate using a first mask patterning;
A third step of forming the impurity ion introduction portion of the counter member by introducing impurity ions into the second semiconductor layer of the substrate using the second mask patterning;
A fourth step of forming a gap between the movable element and the opposing member by etching an insulating layer sandwiched between the first semiconductor layer and the second semiconductor layer;
A fifth step of forming an electrical wiring on at least a part of the impurity ion introduction portion on the surface opposite to the side having the mover;
The manufacturing method characterized by including. A manufacturing method for manufacturing the sensor according to claim 4,
In the third step, impurity ions are introduced by thermally diffusing the source region and the drain region, which are the impurity ion introducing portion, from the surface of the opposing member opposite to the side where the mover is present. 7. The manufacturing method according to claim 6, wherein A manufacturing method for manufacturing the sensor according to claim 4,
In the third step, the source region and the drain region, which are the impurity ion introduction portions, are etched from the surface of the opposing member on the side opposite to the side having the mover to form a recess, and then the recess 7. The manufacturing method according to claim 6, wherein impurity ions are introduced into a portion where the metal is formed. A manufacturing method for manufacturing the sensor according to claim 4,
In the second step, a through hole is formed in the mover,
In the third step, the impurity ions are introduced into the second semiconductor layer by introducing impurity ions into the second semiconductor layer using the pattern of the through hole viewed from the top surface of the substrate prepared in the first step as a mask. 7. The manufacturing method according to claim 6, wherein the source region and the drain region are formed.