JP2008113238A - Piezoelectric vibrator, and manufacturing method and electronic components of piezoelectric vibrator - Google Patents

Piezoelectric vibrator, and manufacturing method and electronic components of piezoelectric vibrator Download PDF

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JP2008113238A
JP2008113238A JP2006294950A JP2006294950A JP2008113238A JP 2008113238 A JP2008113238 A JP 2008113238A JP 2006294950 A JP2006294950 A JP 2006294950A JP 2006294950 A JP2006294950 A JP 2006294950A JP 2008113238 A JP2008113238 A JP 2008113238A
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piezoelectric vibrator
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JP4990596B2 (en
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Satoshi Umeki
三十四 梅木
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Nihon Dempa Kogyo Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric vibrator which can achieve improvement of breakdown voltage for electrostatic destruction. <P>SOLUTION: In a piezoelectric vibrating reed in which a plurality of vibrating arm units project from a base unit, and a piezoelectric vibrator in which exciting electrodes are formed ranging from main planes to side planes of the vibrating arm units, and lead out electrodes pulled out from the exciting electrodes are formed in the base unit, slot units are formed on a surface of the base unit, and the lead out electrodes are formed in the slot units. Moreover, a depth of the slot units is made to be more than thickness of the lead out electrodes formed in the slot units. Furthermore, an insulation film is formed on the front surface of the base unit so as to cover the lead out electrodes formed in the slot units. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は圧電振動子、圧電振動子の製造方法及び電子部品に係り、特に静電気放電による圧電振動子及び電子部品の破壊を防止する技術に関する。   The present invention relates to a piezoelectric vibrator, a method for manufacturing a piezoelectric vibrator, and an electronic component, and more particularly, to a technique for preventing destruction of the piezoelectric vibrator and the electronic component due to electrostatic discharge.

音叉型の水晶振動子は、小型、安価で低消費電力であることから、従来から腕時計の歩度を刻む信号源として採用され、更にその用途が広がろうとしている。この水晶振動子としては、電力損失を抑えるために、CI(クリスタルインピーダンス)値をより小さくすることが要求され、このため水晶振動子に溝部を形成して振動効率を高めたものが用いられている。   The tuning fork type crystal resonator is small, inexpensive, and has low power consumption, so that it has been conventionally employed as a signal source for engraving the rate of a wristwatch, and its application is going to expand. This crystal resonator is required to have a smaller CI (crystal impedance) value in order to suppress power loss. For this reason, a crystal resonator having a groove portion with improved vibration efficiency is used. Yes.

この水晶振動子は図14に示すように基部1に一対の振動腕部2a及び2bが設けられ、各振動腕部2a,2bにおける両主面には溝部31,32が夫々設けられている。またこの水晶振動子には、一対をなす一方の電極と他方の電極とが存在する。つまり一方の振動腕部2aの溝部31,32及び両側面には一方の励振電極41及び他方の励振電極51が夫々形成され、他方の振動腕部2bの溝部31,32及び両側面には他方の励振電極51及び一方に励振電極41が夫々形成されている。またこれら一方の励振電極41同士が電気的に接続されるように基部1の表面に引き出し電極42が形成されていると共に、他方の励振電極51同士が電気的に接続されるように基部1の表面に引き出し電極52が形成されている。なお、図14において励振電極41,51は図面を見え易くするために斜線と黒の点在領域とを使い分けて表している。従って、図14の斜線は水晶片の断面を示すものではない。   As shown in FIG. 14, the crystal resonator includes a base 1 provided with a pair of vibrating arms 2a and 2b, and grooves 31 and 32 are provided on both main surfaces of the vibrating arms 2a and 2b, respectively. In addition, this crystal resonator includes a pair of one electrode and the other electrode. That is, one excitation electrode 41 and the other excitation electrode 51 are respectively formed on the groove portions 31 and 32 and both side surfaces of one vibration arm portion 2a, and the other is formed on the groove portions 31 and 32 and both side surfaces of the other vibration arm portion 2b. The excitation electrode 51 and the excitation electrode 41 are respectively formed on one side. In addition, an extraction electrode 42 is formed on the surface of the base 1 so that the one excitation electrode 41 is electrically connected to each other, and the other excitation electrode 51 is electrically connected to the other of the base 1. A lead electrode 52 is formed on the surface. In FIG. 14, the excitation electrodes 41 and 51 are indicated by using a hatched line and a black dotted area in order to make the drawing easy to see. Therefore, the oblique lines in FIG. 14 do not indicate the cross section of the crystal piece.

そして上述した水晶振動子は、SMD(Surface Mounted Device)構造のセラミックスからなるパッケージに格納され、これにより電子部品が構成される。この電子部品は、発振回路の回路部品が搭載されている配線基板に搭載される。   The above-described crystal resonator is housed in a package made of ceramics having an SMD (Surface Mounted Device) structure, thereby constituting an electronic component. This electronic component is mounted on a wiring board on which circuit components of the oscillation circuit are mounted.

ところで、上述した水晶振動子は静電気放電(electro-static discharge:ESD)により容易に破壊され易い、即ち、ESD耐圧が低いという問題がある。静電破壊が起こる要因としては以下の3つがある。1つ目は帯電している作業者が水晶振動子に触れた時に放電が生じることで静電破壊が起こる。2つ目は電子部品を配線基板に搭載する際、配線基板のアースが不十分な時に、配線基板側から電荷が流れることで放電が発生し、この放電により静電破壊が起こる。3つ目は電子部品自らが充電され、この電子部品が金属部品等に触れた時に放電が生じることで静電破壊が起こる。   By the way, the above-described crystal resonator is easily broken by electrostatic discharge (ESD), that is, has a problem that the ESD withstand voltage is low. There are the following three factors that cause electrostatic breakdown. First, electrostatic breakdown occurs due to discharge occurring when a charged operator touches the crystal unit. Second, when an electronic component is mounted on a wiring board, when the wiring board is not sufficiently grounded, electric charges flow from the wiring board side, and an electric discharge is caused by the discharge. Thirdly, the electronic component itself is charged, and when this electronic component touches a metal component or the like, a discharge occurs and electrostatic breakdown occurs.

そしてこのような静電破壊は、水晶振動子の表面に形成されている電極膜と電極膜との間で放電して起こり、電荷の移動経路としては以下の3つの経路がある。1つ目は図15中のaに示すように引き出し電極42から基部1の上方側の雰囲気を介して引き出し電極52に電荷が移動する経路であり、2つ目は図15中のbに示すように引き出し電極42から基部1の表面を通って引き出し電極52に電荷が移動する経路であり、3つ目は図15中のcに示すように引き出し電極42から基部1内部を通って引き出し電極52に電荷が移動する経路である。さらに引き出し電極42と引き出し電極52との間の水晶振動子の表面に不純物(付着物)が付着した場合にも、基部1の表面において引き出し電極42と不純物と引き出し電極52とが横に並んで、これらの間隔が短くなって連続となることで、この不純物を介して電荷の移動が起こる。なお、図15は、図14のF−F線に沿った断面部分についての概略拡大図である。また図15中のrは電極間42,52の沿面距離である。   Such electrostatic breakdown is caused by discharge between the electrode films formed on the surface of the crystal resonator, and there are the following three paths as charge transfer paths. The first is a path through which charges move from the extraction electrode 42 to the extraction electrode 52 through the atmosphere above the base 1 as shown by a in FIG. 15, and the second is shown by b in FIG. In this way, the charge moves from the extraction electrode 42 through the surface of the base 1 to the extraction electrode 52, and the third is a path from the extraction electrode 42 through the inside of the base 1 as shown in FIG. This is a path through which charges move to 52. Further, even when impurities (attachments) adhere to the surface of the crystal unit between the extraction electrode 42 and the extraction electrode 52, the extraction electrode 42, the impurity, and the extraction electrode 52 are arranged side by side on the surface of the base 1. These intervals are shortened and become continuous, whereby charge transfer occurs through the impurities. FIG. 15 is a schematic enlarged view of a cross-sectional portion taken along line FF in FIG. Further, r in FIG. 15 is a creepage distance between the electrodes 42 and 52.

一方、特許文献1には、逆メサ型の圧電振動片において、枠体と励振部との間の段差部分に形成された配線パターンの断線を防ぐために、前記段差を階段状に形成し、1段あたりの段差寸法を小さくすることが記載されているが、これは上述した課題を解決するものではない。   On the other hand, in Patent Document 1, in the inverted mesa type piezoelectric vibrating piece, in order to prevent disconnection of the wiring pattern formed in the step portion between the frame body and the excitation portion, the step is formed in a step shape. Although it is described that the step size per step is reduced, this does not solve the above-described problem.

特開2002−374135(段落0010、図1)JP 2002-374135 (paragraph 0010, FIG. 1)

本発明はかかる事情に鑑みてなされたものであって、その目的は、静電破壊に対する耐圧の向上を図ることができる圧電振動子、圧電振動子の製造方法及びこの圧電振動子を有する電子部品を提供することを目的とする。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a piezoelectric vibrator capable of improving the breakdown voltage against electrostatic breakdown, a method for manufacturing the piezoelectric vibrator, and an electronic component having the piezoelectric vibrator. The purpose is to provide.

本発明は、基部から複数の振動腕部が伸び出している圧電振動片と、前記振動腕部の主面から側面に亘って励振電極が形成され、前記基部には前記励振電極から引き出された引き出し電極が形成されている圧電振動子において、
前記基部の表面には溝部が形成され、この溝部内に前記引き出し電極が形成されていることを特徴とする。
In the present invention, a piezoelectric vibrating piece in which a plurality of vibrating arms extend from a base, and an excitation electrode are formed from the main surface to the side of the vibrating arm, and the base is drawn from the excitation electrode. In the piezoelectric vibrator in which the extraction electrode is formed,
A groove portion is formed on the surface of the base portion, and the extraction electrode is formed in the groove portion.

上述した圧電振動子において、前記溝部の深さは、当該溝部内に形成される前記引き出し電極の厚み以上であることが好ましい。また前記基部の表面に、前記溝部に形成された引き出し電極を覆うようにして絶縁膜を形成するようにしてもよい。   In the piezoelectric vibrator described above, the depth of the groove is preferably equal to or greater than the thickness of the extraction electrode formed in the groove. Further, an insulating film may be formed on the surface of the base so as to cover the extraction electrode formed in the groove.

また本発明は、圧電基板からエッチングにより複数の圧電振動片に対応する外形部分を得て、上述の圧電振動子を製造する方法であって、
前記圧電振動片の外形を形成した後、表面全体に金属膜が形成されている基板に対し、前記振動腕部の溝部に対応する部位に開口部を有するレジストマスクを用いて、前記金属膜を除去する工程と、
しかる後、前記基板をエッチング液に接触させて、基板の表面が露出している部位をエッチングして前記振動腕部に溝部を形成する工程と、
前記圧電振動片の基部に相当する表面に形成されている前記レジストを、前記基部の溝部に対応する部位に開口部を有するようにパターンニングする工程と、
その後、このレジストマスクを用いて、前記基板をエッチング液に接触させて、前記金属膜を除去する工程と、
前記基板をエッチング液に接触させて、前記金属膜をマスクとして、露出している前記基部の表面に溝部を形成すると共に、露出している前記振動腕部の溝部内に新たな溝部を形成する工程と、
前記基板の表面に残っている前記金属膜を全て剥離する工程と、
次に外形が形成されている部分の全面に電極となる金属膜を形成する工程と、
次いで前記振動腕部の主面から側面に亘って前記金属膜を覆う領域を備えたレジスト膜を形成すると共に、前記基部の溝部に対応する部位にレジスト膜を形成し、これらレジスト膜を用いて、前記金属膜をエッチングして、前記振動腕部の主面から側面に亘って励振電極を形成すると共に、前記基部の溝部に引き出し電極を形成する工程と、を備えたことを特徴とする。
Further, the present invention is a method for manufacturing the above-described piezoelectric vibrator by obtaining an outer shape portion corresponding to a plurality of piezoelectric vibrating pieces by etching from a piezoelectric substrate,
After forming the outer shape of the piezoelectric vibrating piece, the metal film is formed using a resist mask having an opening in a portion corresponding to the groove portion of the vibrating arm portion with respect to a substrate having a metal film formed on the entire surface. Removing, and
Thereafter, the substrate is brought into contact with an etching solution, a portion where the surface of the substrate is exposed is etched, and a groove portion is formed in the vibrating arm portion; and
Patterning the resist formed on the surface corresponding to the base of the piezoelectric vibrating piece so as to have an opening in a portion corresponding to the groove of the base; and
Thereafter, using the resist mask, the step of bringing the substrate into contact with an etching solution to remove the metal film;
Using the metal film as a mask, the substrate is brought into contact with an etching solution, and a groove is formed on the exposed surface of the base, and a new groove is formed in the exposed groove of the vibrating arm. Process,
Peeling all the metal film remaining on the surface of the substrate;
Next, a step of forming a metal film to be an electrode on the entire surface of the portion where the outer shape is formed,
Next, a resist film having a region covering the metal film from the main surface to the side surface of the vibrating arm portion is formed, and a resist film is formed in a portion corresponding to the groove portion of the base portion, and these resist films are used. And etching the metal film to form an excitation electrode from the main surface to the side surface of the vibrating arm portion, and forming a lead electrode in the groove portion of the base portion.

上述した圧電振動子の製造方法において、振動腕部に励振電極を形成すると共に、前記基部の溝部に引き出し電極を形成する工程の後、導電部材との接続部位を確保するために前記引き出し電極が形成されている部位における少なくとも一部に開口部を有する絶縁膜を形成する工程と、を備えた構成であってもよい。
また本発明の圧電振動子は、上述した方法によって製造されたことを特徴とする。
In the piezoelectric vibrator manufacturing method described above, after the step of forming the excitation electrode on the vibrating arm portion and forming the extraction electrode in the groove portion of the base portion, the extraction electrode is provided to secure a connection portion with the conductive member. And a step of forming an insulating film having an opening in at least a part of the formed portion.
The piezoelectric vibrator of the present invention is manufactured by the method described above.

さらに本発明の電子部品は、上述した圧電振動子と、前記圧電振動子を収納するための容器と、前記容器に形成され、前記基部の引き出し電極に電気的に接続された外部電極と、を備えたことを特徴とする。   Furthermore, an electronic component of the present invention includes the above-described piezoelectric vibrator, a container for housing the piezoelectric vibrator, and an external electrode formed on the container and electrically connected to the lead electrode of the base. It is characterized by having.

本発明によれば、基部の表面に溝部を形成し、この溝部内に引き出し電極を形成しているため、互に隣接する電極間の沿面距離が長くなる。このため基部表面の電極間で発生する放電を抑えることができ、静電破壊に対する耐圧(ESD耐圧)が向上する。
また本発明によれば、基部の溝部内に形成されている引き出し電極を覆うようにして絶縁膜を形成することで、圧電振動子のESD耐圧をより一層向上させることができる。
According to the present invention, since the groove portion is formed on the surface of the base portion and the extraction electrode is formed in the groove portion, the creeping distance between the adjacent electrodes becomes long. For this reason, the electric discharge which generate | occur | produces between the electrodes of the base part surface can be suppressed, and the proof pressure (ESD proof pressure) with respect to electrostatic breakdown improves.
According to the present invention, the ESD breakdown voltage of the piezoelectric vibrator can be further improved by forming the insulating film so as to cover the extraction electrode formed in the groove portion of the base portion.

本発明の実施の形態について説明する。この実施の形態に係る圧電振動子である水晶振動子の構造に関しては、基部の表面に溝部が形成され、この溝部内に引き出し電極が形成されている他は従来技術の項のところで図14を用いて説明した水晶振動子と同一であるため、同一である部分の説明を省略する。   Embodiments of the present invention will be described. With respect to the structure of the crystal resonator which is a piezoelectric resonator according to this embodiment, a groove is formed on the surface of the base, and a lead electrode is formed in the groove. Since the crystal unit is the same as that described above, description of the same part is omitted.

図1及び図2は本発明の実施の形態に係る水晶振動子の概略正面図及び概略斜視図であり、図3は図1及び図2のA−A線に沿った断面部分についての拡大図であり、図4は図1及び図2のC−C線に沿った断面部分についての概略拡大図である。図2及び図3に示すように、基部1の表裏両面には溝部5が形成されており、この溝部5の深さdは例えば、0.2μm〜10μmに設定されている。そしてこの溝部5内に、後述する引き出し電極42,52が形成される。この引き出し電極42,52の厚さeは、前記溝部の深さdと同じか、あるいは前記溝部の深さdよりも小さく設定してある。図2では、基部1の溝部5内に形成される電極42,52を斜線で示してある。また、図2に示すように振動腕部2a,2bの溝部32,32と基部1の溝部5とは連接している。そして基部1の溝部5に形成された引き出し電極42,52と振動腕部2a,2bの溝部32,32に形成された励振電極41,51とが接続される。このように基部1の表面に溝部5を形成し、この溝部5内に引き出し電極42,52を形成することで図4に示すように互いに隣接する電極間42,52の沿面距離rが基部1の表面に引き出し電極42,52を形成した場合の電極間42,52の沿面距離r(図15参照)に比べて長くなる。この沿面距離rが長くなると破壊耐圧(Break Down Voltage)が大きくなる。また引き出し電極42,52が基部1の表面より低いと引き出し電極42から基部1上部の雰囲気を介して発生する放電を抑えることができる。   1 and 2 are a schematic front view and a schematic perspective view of a crystal resonator according to an embodiment of the present invention, and FIG. 3 is an enlarged view of a cross-sectional portion taken along the line AA in FIGS. FIG. 4 is a schematic enlarged view of a cross-sectional portion taken along the line CC in FIGS. 1 and 2. As shown in FIGS. 2 and 3, groove portions 5 are formed on both the front and back surfaces of the base portion 1, and the depth d of the groove portions 5 is set to 0.2 μm to 10 μm, for example. In the groove 5, lead electrodes 42 and 52 described later are formed. The thickness e of the extraction electrodes 42 and 52 is set to be the same as the depth d of the groove or smaller than the depth d of the groove. In FIG. 2, the electrodes 42 and 52 formed in the groove portion 5 of the base portion 1 are indicated by hatching. Further, as shown in FIG. 2, the groove portions 32 and 32 of the vibrating arm portions 2 a and 2 b and the groove portion 5 of the base portion 1 are connected. The lead electrodes 42 and 52 formed in the groove portion 5 of the base portion 1 are connected to the excitation electrodes 41 and 51 formed in the groove portions 32 and 32 of the vibrating arm portions 2a and 2b. In this way, the groove portion 5 is formed on the surface of the base portion 1, and the lead electrodes 42 and 52 are formed in the groove portion 5, so that the creeping distance r between the adjacent electrodes 42 and 52 as shown in FIG. This is longer than the creepage distance r (see FIG. 15) between the electrodes 42 and 52 when the extraction electrodes 42 and 52 are formed on the surface of the electrode. As the creeping distance r increases, the breakdown voltage (Break Down Voltage) increases. Further, if the extraction electrodes 42 and 52 are lower than the surface of the base 1, the discharge generated from the extraction electrode 42 through the atmosphere above the base 1 can be suppressed.

図1及び図2に説明を戻すと、この水晶振動子には、一対をなす一方の電極と他方の電極とが存在する。先ず振動腕部2aに着目すると、振動腕部2aの2つの溝部31,32の内面全体とこれら溝部31,32の間に一方の励振電極41が形成されている。即ち、溝部31,32の間に相当するいわば橋部に形成された励振電極41により、振動腕部2aの各溝部31,32内の励振電極41同士が互に接続されている。そしてこの振動腕部2aの両側面には他方の励振電極51が形成されている。また振動腕部2aにおける先端部には、その重量を調整することにより発振周波数を調整するための金属膜である調整用錘50が設けられている。   Returning to FIG. 1 and FIG. 2, this crystal resonator includes a pair of one electrode and the other electrode. First, paying attention to the vibrating arm portion 2 a, one excitation electrode 41 is formed between the entire inner surfaces of the two groove portions 31 and 32 of the vibrating arm portion 2 a and the groove portions 31 and 32. That is, the excitation electrodes 41 in the groove portions 31 and 32 of the vibrating arm portion 2a are connected to each other by the excitation electrode 41 formed in the bridge portion corresponding to the groove portions 31 and 32. The other excitation electrode 51 is formed on both side surfaces of the vibrating arm portion 2a. An adjustment weight 50, which is a metal film for adjusting the oscillation frequency by adjusting the weight of the vibration arm 2a, is provided at the tip of the vibration arm 2a.

また振動腕部2bに着目すると、振動腕部2bの2つの溝部31,32の内面全体と、これら溝部31,32の各々の間に他方の励振電極51が形成されている。そしてこの振動腕部2bの両側面には一方の励振電極41が形成されている。なお、振動腕部2aにおける先端部においても、同様にその重量を調整することにより発振周波数を調整するための調整用錘40が設けられている。また振動腕部2a,2bに設けられた電極の配置は、励振電極41,51が互に逆の関係であることを除くと互に同一である。そしてこれら一方の励振電極41同士が電気的に接続されるように基部1の表面に形成された溝部5内に引き出し電極42が形成されると共に、他方の励振電極51同士が接続されるように基部1の表面に形成された溝部5内に引き出し電極52が形成される。なお、図1及び図2において励振電極41,51及び引き出し電極42,52は図面を見え易くするために斜線と黒の点在領域とを使い分けて表している。従って、図1及び図2の斜線は水晶片の断面を示すものではない。   When attention is paid to the vibrating arm portion 2b, the entire inner surfaces of the two groove portions 31 and 32 of the vibrating arm portion 2b and the other excitation electrode 51 are formed between the groove portions 31 and 32, respectively. One excitation electrode 41 is formed on both side surfaces of the vibrating arm portion 2b. Note that an adjustment weight 40 for adjusting the oscillation frequency by adjusting the weight is also provided at the tip of the vibrating arm 2a. The arrangement of the electrodes provided on the vibrating arm portions 2a and 2b is the same except that the excitation electrodes 41 and 51 are opposite to each other. The lead electrode 42 is formed in the groove portion 5 formed on the surface of the base 1 so that the one excitation electrode 41 is electrically connected, and the other excitation electrode 51 is connected. An extraction electrode 52 is formed in the groove 5 formed on the surface of the base 1. In FIG. 1 and FIG. 2, the excitation electrodes 41 and 51 and the extraction electrodes 42 and 52 are shown separately using diagonal lines and black interspersed regions in order to make the drawings easy to see. Accordingly, the hatched lines in FIGS. 1 and 2 do not indicate the cross section of the crystal piece.

次に、図1及び図2に示す水晶振動子の製造方法について図5〜図9を参照しながら説明する。なお、図5〜図8は一枚の圧電基板のある一部分に作成される一個の水晶振動子について説明したものである。また図5〜図6は図1及び図2のB−B線に沿った断面部分についての製造工程を示す図であり、図7〜図8は図1及び図2のA−A線及びB−B線に沿った断面部分についての製造工程を示す図である。先ず切り出された圧電基板である水晶ウエハ60を研磨加工して洗浄した後に、スパッタ法で金属膜61を形成する(図5(a))。この金属膜61は例えばクロム(Cr)の下地膜に金(Au)を積層したものが用いられる。   Next, a method for manufacturing the crystal unit shown in FIGS. 1 and 2 will be described with reference to FIGS. 5 to 8 illustrate one crystal resonator formed on a part of one piezoelectric substrate. 5 to 6 are views showing a manufacturing process for a cross-sectional portion along the line BB in FIGS. 1 and 2, and FIGS. 7 to 8 are lines AA and B in FIGS. It is a figure which shows the manufacturing process about the cross-sectional part along the -B line. First, after the quartz wafer 60, which is the cut out piezoelectric substrate, is polished and cleaned, a metal film 61 is formed by sputtering (FIG. 5A). As the metal film 61, for example, a film in which gold (Au) is laminated on a chromium (Cr) base film is used.

続いてこのような金属膜61の上にフォトレジストを例えばスピンコート法で塗布した後(図5(b))、このフォトレジストを水晶片の形状、即ち音叉形状のパターンとなるように露光及び現像し、音叉形状のレジスト膜62を形成する(図5(c))。そしてこの後、前記レジスト膜62をマスクにして水晶ウエハ60をヨウ化カリウム(KI)溶液中に浸漬してウエットエッチングを行って、レジスト膜62に覆われていない金属膜61の部分を除去する(図5(d))。
しかる後、レジスト膜62が金属膜61に載ったまま、当該金属膜61をマスクにして水晶ウエハ60をエッチング液であるフッ酸中に浸漬してウエットエッチングを行って、水晶片65の外形を形成する(図5(e))。こうして圧電基板である水晶ウエハ60に複数個の水晶片65が形成される。
続いて水晶ウエハ60に残っているレジスト膜63を全て除去する(図6(f))。しかる後、水晶ウエハ60の全面にフォトレジストを例えばスプレー法で塗布し、レジスト膜63を形成する(図6(g))。
次いで図1に示す溝部31,32に相当する部分のレジスト膜63を剥離する(図6(h))。続いて前記レジスト膜63をマスクにして水晶ウエハ60をKI溶液中に浸漬してウエットエッチングを行って、レジスト膜63が剥離した箇所の金属膜61を除去する(図6(i))。
しかる後、レジスト膜63が金属膜61に載ったまま、当該金属膜61をマスクにして水晶ウエハ60をエッチング液であるフッ酸中に浸漬してウエットエッチングを行って、水晶ウエハ60の両主面に溝部31,32を形成する(図6(j))。
Subsequently, after applying a photoresist on such a metal film 61 by, for example, a spin coating method (FIG. 5B), this photoresist is exposed to a crystal piece shape, that is, a tuning fork shape pattern. Development is performed to form a tuning fork-shaped resist film 62 (FIG. 5C). Thereafter, the quartz wafer 60 is immersed in a potassium iodide (KI) solution using the resist film 62 as a mask, and wet etching is performed to remove a portion of the metal film 61 not covered with the resist film 62. (FIG. 5D).
Thereafter, while the resist film 62 is placed on the metal film 61, the crystal wafer 65 is wet etched by immersing the crystal wafer 60 in hydrofluoric acid as an etching solution using the metal film 61 as a mask. It forms (FIG.5 (e)). Thus, a plurality of crystal pieces 65 are formed on the crystal wafer 60 which is a piezoelectric substrate.
Subsequently, the resist film 63 remaining on the quartz wafer 60 is completely removed (FIG. 6F). Thereafter, a photoresist is applied to the entire surface of the quartz wafer 60 by, for example, a spray method to form a resist film 63 (FIG. 6G).
Next, the resist film 63 corresponding to the groove portions 31 and 32 shown in FIG. 1 is peeled off (FIG. 6H). Subsequently, using the resist film 63 as a mask, the quartz wafer 60 is immersed in a KI solution and wet etching is performed to remove the metal film 61 where the resist film 63 is peeled off (FIG. 6 (i)).
Thereafter, while the resist film 63 is placed on the metal film 61, the quartz wafer 60 is immersed in hydrofluoric acid as an etching solution using the metal film 61 as a mask to perform wet etching. Grooves 31 and 32 are formed on the surface (FIG. 6 (j)).

次に、水晶片65において図1及び図2に示す基部1に相当する表面に溝部5を形成する工程について説明する。先ず、水晶片65の基部1に相当する表面に形成されているレジスト膜63を所定形状のパターンとなるように露光及び現像する(図7(k))。なお、この例では基部1の表面に形成されているレジスト膜63以外のレジスト膜63は露光及び現像されない。そしてこの後、所定の形状にパターンニングされたレジスト膜63をマスクにして水晶ウエハ60をヨウ化カリウム(KI)溶液中に浸漬してウエットエッチングを行って、レジスト膜63に覆われていない金属膜61の部分を除去する(図7(l))。そして水晶ウエハ60に残っているレジスト膜63を全て剥離した後、前記金属膜61をマスクにして水晶ウエハ60をエッチング液であるフッ酸中に浸漬してウエットエッチングを行って、水晶片65の基部1に相当する表面に溝部5を形成する(図7(m))。なお、この例では、基部1の表面に溝部5を形成する際に、図7(m)に示すように水晶ウエハ60の両主面に形成されている溝部31,32内に、基部1に形成された溝部5と同じ深さの溝が形成されることになる。このように振動腕部2a,2bに形成される溝部31,32を多段溝とすることで、後述するように溝部31,32内に形成される電極を振動腕部2a,2bの表面よりも下に埋め込むことができる。こうすることで溝部31,32に形成された励振電極41,51と振動腕部2a,2bの側面に形成された励振電極41,51との沿面距離が長くなり、破壊耐圧(Break Down Voltage)を大きくすることができる。従って、ESD耐圧が向上する。その後、水晶ウエハ60に残っている金属膜61を全て剥離する(図7(n))。以上の工程により、図9に示すように基部1の表面に溝部5が形成された原型6が製造される。なお、図9では基部1の表面に溝部5が形成される部分を斜線で表している。   Next, a process of forming the groove 5 in the surface corresponding to the base 1 shown in FIGS. 1 and 2 in the crystal piece 65 will be described. First, the resist film 63 formed on the surface corresponding to the base 1 of the crystal piece 65 is exposed and developed so as to form a pattern of a predetermined shape (FIG. 7 (k)). In this example, the resist film 63 other than the resist film 63 formed on the surface of the base 1 is not exposed and developed. Then, using the resist film 63 patterned in a predetermined shape as a mask, the quartz wafer 60 is immersed in a potassium iodide (KI) solution and wet etching is performed, so that the metal not covered with the resist film 63 is obtained. The part of the film 61 is removed (FIG. 7L). Then, after all the resist film 63 remaining on the quartz wafer 60 is peeled off, the quartz wafer 60 is wet etched by immersing the quartz wafer 60 in hydrofluoric acid as an etching solution using the metal film 61 as a mask. Grooves 5 are formed on the surface corresponding to the base 1 (FIG. 7 (m)). In this example, when the groove portion 5 is formed on the surface of the base portion 1, the base portion 1 is formed in the groove portions 31 and 32 formed on both main surfaces of the crystal wafer 60 as shown in FIG. A groove having the same depth as the formed groove 5 is formed. Thus, by making the groove portions 31 and 32 formed in the vibrating arm portions 2a and 2b into multistage grooves, the electrodes formed in the groove portions 31 and 32 are made to be more than the surfaces of the vibrating arm portions 2a and 2b as described later. Can be embedded below. By doing so, the creeping distance between the excitation electrodes 41 and 51 formed in the grooves 31 and 32 and the excitation electrodes 41 and 51 formed on the side surfaces of the vibrating arms 2a and 2b is increased, and the breakdown voltage (Break Down Voltage) is increased. Can be increased. Therefore, the ESD withstand voltage is improved. Thereafter, all the metal film 61 remaining on the quartz wafer 60 is peeled off (FIG. 7 (n)). Through the above steps, the prototype 6 having the groove portion 5 formed on the surface of the base portion 1 as shown in FIG. 9 is manufactured. In FIG. 9, a portion where the groove portion 5 is formed on the surface of the base portion 1 is indicated by hatching.

続いて、水晶片65の振動腕部2及び基部1に相当する部分に電極膜を形成する工程について説明する。図7(n)に示す工程の後、原型6の両面にスパッタ法で電極となる金属膜66を形成する(図8(o))。この金属膜66は例えばクロム(Cr)の下地膜に金(Au)を積層したものが用いられる。
続いてこのような金属膜66の上にフォトレジストをスプレー法で塗布する(図8(p))。そしてフォトリソグラフィーによって水晶片65の振動腕部2に相当する部分では電極パターンとなるレジスト膜67以外のレジスト膜67を剥離すると共に、水晶片65の基部1に相当する部分では基部1の溝部5に対応する部位に形成されるレジスト膜67以外のレジスト膜67を剥離する(図8(q))。次に、レジスト膜67が剥離された箇所の金属膜66をエッチングして振動腕部2の主面から側面に亘って金属膜66(励振電極41,51)を形成すると共に、基部1内に金属膜66(引き出し電極42,52)を形成する(図8(r))。なお、溝部31,32内の電極は、振動腕部2a,2bの表面よりも下に埋め込まれている。その後、原型6に残っているレジスト膜67を全て剥離する(図8(s))。
しかる後、振動腕部2における先端部において、当該先端部に形成されている金属膜66の表面をレーザー等で削って、その重さを調整することで発振周波数の調整を行う。そして電極パターンが形成された原型6から、図1及び図2に示す水晶振動子が切り出されることになる。
Subsequently, a process of forming an electrode film on portions corresponding to the vibrating arm portion 2 and the base portion 1 of the crystal piece 65 will be described. After the step shown in FIG. 7 (n), metal films 66 to be electrodes are formed on both surfaces of the prototype 6 by sputtering (FIG. 8 (o)). As the metal film 66, for example, a film in which gold (Au) is laminated on a chromium (Cr) base film is used.
Subsequently, a photoresist is applied on the metal film 66 by a spray method (FIG. 8 (p)). Then, by photolithography, the resist film 67 other than the resist film 67 serving as the electrode pattern is peeled off at the portion corresponding to the vibrating arm portion 2 of the crystal piece 65 and the groove portion 5 of the base portion 1 at the portion corresponding to the base portion 1 of the crystal piece 65. The resist film 67 other than the resist film 67 formed at the site corresponding to is peeled off (FIG. 8 (q)). Next, the metal film 66 where the resist film 67 is peeled is etched to form the metal film 66 (excitation electrodes 41 and 51) from the main surface to the side surface of the vibrating arm portion 2, and in the base 1. A metal film 66 (lead electrodes 42 and 52) is formed (FIG. 8 (r)). The electrodes in the grooves 31 and 32 are embedded below the surfaces of the vibrating arm portions 2a and 2b. Thereafter, all the resist film 67 remaining on the master 6 is peeled off (FIG. 8 (s)).
Thereafter, the oscillation frequency is adjusted by shaving the surface of the metal film 66 formed on the tip of the vibrating arm 2 with a laser or the like and adjusting its weight. Then, the crystal resonator shown in FIGS. 1 and 2 is cut out from the master 6 on which the electrode pattern is formed.

そして上述した水晶振動子は、例えば図10に示すように、SMD(Surface Mounted Device)構造のセラミックスからなるパッケージ7に格納される。このパッケージ7は、上面が開口している例えばセラミック製のケース体7aと、例えば金属製の蓋体7bとから構成される。前記ケース体7aと蓋体7bとは、例えば溶接材からなるシール材7cを介してシーム溶接され、その内部は真空状態となっている。上述した音叉型の水晶振動子70は、このパッケージ7内の台座71部分に基部1の溝部5内に形成された引き出し電極42,52が導電性接着剤7dに固定され、振動腕部2a,2bがパッケージ7内部の空間に伸び出した横向きの姿勢で台座71に固定される。また前記台座71の表面には、導電路72,73(73は紙面奥側の導電路である)が配線されており、基部1の溝部5内に形成された引き出し電極42,52が導電性接着剤7dを介して前記導電路72,73に接続される。また前記導電路72,73は、ケース体7aの外部底面の長手方向に対向するように設けられた電極74,75に夫々接続されており、この結果、電極74,75、導電路72,73及び導電性接着剤7dを通って基部1の溝部5内に形成された引き出し電極42,52に電圧が印加されることで、前記水晶振動子70が振動するようになっている。こうして電子部品が構成され、この電子部品は、発振回路の回路部品が搭載されている図示しない配線基板に搭載される。   For example, as shown in FIG. 10, the above-described crystal resonator is stored in a package 7 made of ceramic having an SMD (Surface Mounted Device) structure. The package 7 includes a case body 7a made of, for example, ceramic whose upper surface is open, and a lid body 7b made of, for example, metal. The case body 7a and the lid body 7b are seam welded via a sealing material 7c made of, for example, a welding material, and the inside is in a vacuum state. In the tuning fork type crystal resonator 70 described above, lead electrodes 42 and 52 formed in the groove portion 5 of the base 1 are fixed to the conductive adhesive 7d on the base 71 portion in the package 7, and the vibrating arm portion 2a, 2b is fixed to the pedestal 71 in a lateral posture extending into the space inside the package 7. Conductive paths 72 and 73 (73 is a conductive path on the back side of the drawing) are wired on the surface of the pedestal 71, and lead electrodes 42 and 52 formed in the groove 5 of the base 1 are conductive. The conductive paths 72 and 73 are connected via an adhesive 7d. The conductive paths 72 and 73 are respectively connected to electrodes 74 and 75 provided so as to face the longitudinal direction of the outer bottom surface of the case body 7a. As a result, the electrodes 74 and 75 and the conductive paths 72 and 73 are connected. The crystal vibrator 70 is vibrated by applying a voltage to the lead electrodes 42 and 52 formed in the groove portion 5 of the base portion 1 through the conductive adhesive 7d. Thus, an electronic component is configured, and this electronic component is mounted on a wiring board (not shown) on which circuit components of the oscillation circuit are mounted.

上述した実施の形態によれば、基部1の表面に溝部5を形成し、この溝部5内に引き出し電極42,52を形成しているため、図4に示すように互いに隣接する電極間42,52の沿面距離rが長くなる。この沿面距離rが長くなると破壊耐圧(Break Down Voltage)が大きくなる。また引き出し電極42,52が基部1の表面より低いと引き出し電極42から基部1上部の雰囲気を介して発生する放電を抑えることができる。また基部1の表面に不純物(付着物)が付着していても、引き出し電極42,52は基部1の表面に埋設されているため、引き出し電極42,52と不純物との距離が長くなり不純物を介して電荷が移動するおそれがない。その結果、静電破壊に対する耐圧(ESD耐圧)が向上する。本発明者は、従来の水晶振動子のESD耐圧に比べて1.5倍以上となることを実験で確認している。
また、上述の実施の形態によれば、振動腕部2a,2bに溝部31,32を形成した後、基部1に溝部5を形成しているので、水晶振動子の機械的強度を保つことができる。
According to the above-described embodiment, since the groove portion 5 is formed on the surface of the base portion 1 and the extraction electrodes 42 and 52 are formed in the groove portion 5, as shown in FIG. The creepage distance r of 52 becomes longer. As the creeping distance r increases, the breakdown voltage (Break Down Voltage) increases. Further, if the extraction electrodes 42 and 52 are lower than the surface of the base 1, the discharge generated from the extraction electrode 42 through the atmosphere above the base 1 can be suppressed. Even if impurities (attachments) are attached to the surface of the base 1, the lead electrodes 42 and 52 are embedded in the surface of the base 1, so that the distance between the lead electrodes 42 and 52 and the impurities is increased. There is no fear that the electric charge moves through. As a result, the withstand voltage against electrostatic breakdown (ESD withstand voltage) is improved. The inventor has confirmed through experiments that the ESD withstand voltage of a conventional crystal resonator is 1.5 times or more.
Further, according to the above-described embodiment, since the groove portions 5 are formed in the base portion 1 after the groove portions 31 and 32 are formed in the vibrating arm portions 2a and 2b, the mechanical strength of the crystal resonator can be maintained. it can.

続いて本発明の他の実施の形態について説明する。この実施の形態は、図1に示す水晶振動子において、図11に示すように振動腕部2の主面から側面に亘って絶縁膜9が形成されると共に、基部1の溝部5内に形成された引き出し電極42,52の部位に開口部91を有し、この開口部91以外の基部1の表面全体に絶縁膜9が形成される他は、上述した水晶振動子と全く同じ構成にある。この絶縁膜9に形成された開口部91は、図10に示す電子部品において、引き出し電極42,52と導電部材例えば導電性接着剤7dとを電気的に接続するために形成されたものであり、この開口部91の大きさは引き出し電極42,52と導電性接着剤7dとが電気的に充分に接続できる程度の大きさであればよい。つまり導電性接着材7dと接続される引き出し電極42,52以外の引き出し電極42,52は絶縁膜9で覆われることになる。またこの絶縁膜9としては例えば窒化シリコン膜(SiN4)が用いられる。なお、図12に図11のD−D線に沿った断面部分を示すと共に、図13に図11のE−E線に沿った断面部分を示す。   Next, another embodiment of the present invention will be described. In this embodiment, in the quartz crystal resonator shown in FIG. 1, an insulating film 9 is formed from the main surface to the side surface of the vibrating arm portion 2 and formed in the groove portion 5 of the base portion 1 as shown in FIG. Except for having an opening 91 at the portion of the extracted electrodes 42 and 52 and forming the insulating film 9 on the entire surface of the base 1 other than the opening 91, it has the same configuration as the above-described crystal resonator. . The opening 91 formed in the insulating film 9 is formed in the electronic component shown in FIG. 10 to electrically connect the extraction electrodes 42 and 52 and the conductive member, for example, the conductive adhesive 7d. The size of the opening 91 may be such that the extraction electrodes 42 and 52 and the conductive adhesive 7d can be sufficiently electrically connected. That is, the lead electrodes 42 and 52 other than the lead electrodes 42 and 52 connected to the conductive adhesive 7 d are covered with the insulating film 9. As the insulating film 9, for example, a silicon nitride film (SiN4) is used. 12 shows a cross-sectional portion along the line DD in FIG. 11, and FIG. 13 shows a cross-sectional portion along the line EE in FIG.

またこの絶縁膜9は、図8(s)に示す工程の後に水晶ウエハ60の表面に形成される。つまり、振動腕部2に励振電極41,51を形成すると共に、基部1の溝部5内に引き出し電極42,52を形成した後、振動腕部2の先端部分と引き出し電極42,52の所定の部位とを覆うマスクを水晶ウエハ60の上方側に位置させ、このマスクを介して水晶ウエハ60の表面に絶縁膜9を例えばスッパタ法やCVD法等で形成する。この絶縁膜9の厚さは0.5μm以上必要である。   The insulating film 9 is formed on the surface of the quartz wafer 60 after the step shown in FIG. That is, the excitation electrodes 41 and 51 are formed on the vibrating arm portion 2 and the extraction electrodes 42 and 52 are formed in the groove portion 5 of the base portion 1, and then the distal end portion of the vibration arm portion 2 and the predetermined electrodes of the extraction electrodes 42 and 52 are formed. A mask covering the portion is positioned on the upper side of the quartz wafer 60, and the insulating film 9 is formed on the surface of the quartz wafer 60 through this mask by, for example, a sputtering method or a CVD method. The insulating film 9 needs to have a thickness of 0.5 μm or more.

このように振動腕部2に形成されている励振電極41,51及び基部1の溝部5内に形成されている引き出し電極42,52を絶縁膜9で覆うことで、水晶振動子のESD耐圧をより一層向上させることができる。特に、基部1の溝部5内に形成されている引き出し電極42,52を絶縁膜9で覆うことで、引き出し電極42から引き出し電極52に基部1上部の雰囲気を介して発生する放電を抑えることができる。   Thus, by covering the excitation electrodes 41 and 51 formed on the vibrating arm portion 2 and the extraction electrodes 42 and 52 formed in the groove portion 5 of the base portion 1 with the insulating film 9, the ESD withstand voltage of the crystal resonator can be reduced. This can be further improved. In particular, by covering the extraction electrodes 42 and 52 formed in the groove portion 5 of the base 1 with the insulating film 9, it is possible to suppress discharge generated from the extraction electrode 42 to the extraction electrode 52 through the atmosphere above the base 1. it can.

また上述した水晶振動子において、振動腕部2a,2bの両側面に溝部を形成し、この溝部内に励振電極41,51を形成してもよい。このように引き出し電極42,52を基部1表面に埋め込むと共に、励振電極41,51を振動腕部2a,2b表面に埋め込むことで、水晶振動子のESD耐圧がより一層向上する。   Further, in the above-described crystal resonator, grooves may be formed on both side surfaces of the vibrating arms 2a and 2b, and the excitation electrodes 41 and 51 may be formed in the grooves. In this way, the extraction electrodes 42 and 52 are embedded in the surface of the base 1 and the excitation electrodes 41 and 51 are embedded in the surfaces of the vibrating arms 2a and 2b, thereby further improving the ESD withstand voltage of the crystal resonator.

本発明の実施の形態に係る音叉型水晶振動子を示す概略正面図である。1 is a schematic front view showing a tuning fork type crystal resonator according to an embodiment of the present invention. 本発明の実施の形態に係る音叉型水晶振動子を示す概略斜視図である。1 is a schematic perspective view showing a tuning fork type crystal resonator according to an embodiment of the present invention. 前記音叉型水晶振動子の基部に形成されている溝部箇所の断面図である。It is sectional drawing of the groove part location currently formed in the base of the said tuning fork type crystal resonator. 前記音叉型水晶振動子の基部に形成された電極間の沿面距離を示す概略拡大断面図である。It is a general | schematic expanded sectional view which shows the creeping distance between the electrodes formed in the base of the said tuning fork type crystal resonator. 本発明の実施の形態に係る音叉型水晶振動子の製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the tuning fork type crystal resonator which concerns on embodiment of this invention. 本発明の実施の形態に係る音叉型水晶振動子の製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the tuning fork type crystal resonator which concerns on embodiment of this invention. 本発明の実施の形態に係る音叉型水晶振動子の製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the tuning fork type crystal resonator which concerns on embodiment of this invention. 本発明の実施の形態に係る音叉型水晶振動子の製造方法を示す概略断面図である。It is a schematic sectional drawing which shows the manufacturing method of the tuning fork type crystal resonator which concerns on embodiment of this invention. 本発明の実施の形態に係る音叉型水晶振動子の製造工程において製造される水晶振動子の原型の一例を示す平面図である。It is a top view which shows an example of the prototype of the crystal oscillator manufactured in the manufacturing process of the tuning fork type crystal oscillator concerning an embodiment of the invention. 本発明の実施の形態に係る音叉型水晶振動子を格納した電子部品の一例を示す概略縦断面図及び裏面図である。FIG. 2 is a schematic longitudinal sectional view and a back view showing an example of an electronic component storing a tuning fork type crystal resonator according to an embodiment of the present invention. 本発明の実施の形態に係る音叉型水晶振動子の他の例を示す概略正面図である。It is a schematic front view which shows the other example of the tuning fork type crystal resonator based on embodiment of this invention. 前記音叉型水晶振動子の振動腕部に形成されている溝部箇所の断面図である。It is sectional drawing of the groove part location currently formed in the vibration arm part of the said tuning fork type crystal resonator. 前記音叉型水晶振動子の基部に形成されている溝部箇所の断面図である。It is sectional drawing of the groove part location currently formed in the base of the said tuning fork type crystal resonator. 従来の音叉型水晶振動子を示す概略断面図である。It is a schematic sectional drawing which shows the conventional tuning fork type crystal resonator. 前記音叉型水晶振動子の基部箇所の断面図である。It is sectional drawing of the base location of the said tuning fork type crystal resonator.

符号の説明Explanation of symbols

1 基部
2a,2b 振動腕部
5 溝部
7 パッケージ
9 絶縁膜
31,32 溝部
40,50 調整用錘
41,51 励振電極
42,52 引き出し電極
60 水晶ウエハ
61,66 金属膜
62,63,67 レジスト膜
DESCRIPTION OF SYMBOLS 1 Base 2a, 2b Vibration arm part 5 Groove part 7 Package 9 Insulating film 31, 32 Groove part 40, 50 Adjustment weight 41, 51 Excitation electrode 42, 52 Extraction electrode 60 Crystal wafer 61, 66 Metal film 62, 63, 67 Resist film

Claims (7)

基部から複数の振動腕部が伸び出している圧電振動片と、前記振動腕部の主面から側面に亘って励振電極が形成され、前記基部には前記励振電極から引き出された引き出し電極が形成されている圧電振動子において、
前記基部の表面には溝部が形成され、この溝部内に前記引き出し電極が形成されていることを特徴とする圧電振動子。
A piezoelectric vibrating piece having a plurality of vibrating arms extending from the base, and an excitation electrode formed from the main surface to the side of the vibrating arm, and an extraction electrode drawn from the excitation electrode formed on the base In the piezoelectric vibrator that is
A groove is formed on the surface of the base, and the lead electrode is formed in the groove.
前記溝部の深さは、当該溝部内に形成される前記引き出し電極の厚み以上であることを特徴とする請求項1記載の圧電振動子。   2. The piezoelectric vibrator according to claim 1, wherein the depth of the groove is equal to or greater than the thickness of the extraction electrode formed in the groove. 前記基部の表面には、前記溝部に形成された前記引き出し電極を覆うようにして絶縁膜が形成されていることを特徴とする請求項1または2に記載の圧電振動子。   3. The piezoelectric vibrator according to claim 1, wherein an insulating film is formed on a surface of the base portion so as to cover the extraction electrode formed in the groove portion. 圧電基板からエッチングにより複数の圧電振動片に対応する外形部分を得て、請求項1に記載の圧電振動子を製造する方法であって、
前記圧電振動片の外形を形成した後、表面全体に金属膜が形成されている基板に対し、前記振動腕部の溝部に対応する部位に開口部を有するレジストマスクを用いて、前記金属膜を除去する工程と、
しかる後、前記基板をエッチング液に接触させて、基板の表面が露出している部位をエッチングして前記振動腕部に溝部を形成する工程と、
前記圧電振動片の基部に相当する表面に形成されている前記レジストを、前記基部の溝部に対応する部位に開口部を有するようにパターンニングする工程と、
その後、このレジストマスクを用いて、前記基板をエッチング液に接触させて、前記金属膜を除去する工程と、
前記基板をエッチング液に接触させて、前記金属膜をマスクとして、露出している前記基部の表面に溝部を形成すると共に、露出している前記振動腕部の溝部内に新たな溝部を形成する工程と、
前記基板の表面に残っている前記金属膜を全て剥離する工程と、
次に外形が形成されている部分の全面に電極となる金属膜を形成する工程と、
次いで前記振動腕部の主面から側面に亘って前記金属膜を覆う領域を備えたレジスト膜を形成すると共に、前記基部の溝部に対応する部位にレジスト膜を形成し、これらレジスト膜を用いて、前記金属膜をエッチングして、前記振動腕部の主面から側面に亘って励振電極を形成すると共に、前記基部の溝部に引き出し電極を形成する工程と、を備えたことを特徴とする圧電振動子の製造方法。
A method for producing a piezoelectric vibrator according to claim 1, wherein outer portions corresponding to a plurality of piezoelectric vibrating pieces are obtained by etching from a piezoelectric substrate,
After forming the outer shape of the piezoelectric vibrating piece, the metal film is formed using a resist mask having an opening in a portion corresponding to the groove portion of the vibrating arm portion with respect to a substrate having a metal film formed on the entire surface. Removing, and
Thereafter, the substrate is brought into contact with an etching solution, a portion where the surface of the substrate is exposed is etched, and a groove portion is formed in the vibrating arm portion; and
Patterning the resist formed on the surface corresponding to the base of the piezoelectric vibrating piece so as to have an opening in a portion corresponding to the groove of the base; and
Thereafter, using the resist mask, the step of bringing the substrate into contact with an etching solution to remove the metal film;
Using the metal film as a mask, the substrate is brought into contact with an etching solution, and a groove is formed on the exposed surface of the base, and a new groove is formed in the exposed groove of the vibrating arm. Process,
Peeling all the metal film remaining on the surface of the substrate;
Next, a step of forming a metal film to be an electrode on the entire surface of the portion where the outer shape is formed,
Next, a resist film having a region covering the metal film from the main surface to the side surface of the vibrating arm portion is formed, and a resist film is formed in a portion corresponding to the groove portion of the base portion, and these resist films are used. And a step of etching the metal film to form an excitation electrode from the main surface to the side surface of the vibrating arm portion and forming an extraction electrode in the groove portion of the base portion. A method for manufacturing a vibrator.
前記振動腕部に励振電極を形成すると共に、前記基部の溝部に引き出し電極を形成する工程の後、導電部材との接続部位を確保するために前記引き出し電極が形成されている部位における少なくとも一部に開口部を有する絶縁膜を形成する工程と、を備えたことを特徴とする請求項4に記載の圧電振動子の製造方法。   After forming the excitation electrode on the vibrating arm and forming the extraction electrode in the groove of the base, at least a part of the region where the extraction electrode is formed in order to secure a connection site with the conductive member The method of manufacturing a piezoelectric vibrator according to claim 4, further comprising a step of forming an insulating film having an opening in the substrate. 請求項4または5に記載の方法によって製造されたことを特徴とする圧電振動子。   A piezoelectric vibrator manufactured by the method according to claim 4 or 5. 請求項1、2、3、6のいずれか一つに記載の圧電振動子と、前記圧電振動子を収納するための容器と、前記容器に形成され、前記基部の引き出し電極に電気的に接続された外部電極と、を備えたことを特徴とする電子部品。   The piezoelectric vibrator according to any one of claims 1, 2, 3, and 6, a container for housing the piezoelectric vibrator, and formed in the container and electrically connected to the extraction electrode of the base And an external electrode.
JP2006294950A 2006-10-30 2006-10-30 Piezoelectric vibrator, method for manufacturing piezoelectric vibrator, and electronic component Expired - Fee Related JP4990596B2 (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023730A1 (en) * 2008-08-27 2010-03-04 セイコーインスツル株式会社 Piezoelectric vibrator, oscillator, electronic apparatus and radio clock, and method for manufacturing piezoelectric vibrator
JP2010135973A (en) * 2008-12-03 2010-06-17 Nippon Dempa Kogyo Co Ltd Method for manufacturing piezoelectric device
JP2010183537A (en) * 2009-02-09 2010-08-19 Seiko Instruments Inc Piezoelectric vibration element manufacturing method and piezoelectric vibration element, piezoelectric vibrator, oscillator, electronic apparatus, and radio clock
CN102082555A (en) * 2009-11-27 2011-06-01 精工电子有限公司 Piezoelectric vibrating reed, piezoelectric vibrator, method of manufacturing piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece
JP2015103927A (en) * 2013-11-22 2015-06-04 株式会社大真空 Tuning folk type piezoelectric vibration piece, and piezoelectric vibrator
JP2016139899A (en) * 2015-01-27 2016-08-04 京セラクリスタルデバイス株式会社 Crystal device and manufacturing method of the same
CN118413206A (en) * 2024-06-28 2024-07-30 深圳新声半导体有限公司 Surface acoustic wave filter and electronic equipment
JP7565633B2 (en) 2022-11-21 2024-10-11 成都泰美克晶体技術有限公司 New tuning fork type crystal oscillator, its manufacturing method and piezoelectric device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004187253A (en) * 2002-12-02 2004-07-02 Herutsu Kk Supporting structure for quartz oscillator
JP2004200915A (en) * 2002-12-17 2004-07-15 Seiko Epson Corp Quartz vibrating piece, its manufacturing method, quartz device using the same, and portable telephone unit and electronic apparatus using quartz device
JP2004289650A (en) * 2003-03-24 2004-10-14 Seiko Epson Corp Manufacturing of piezoelectric device and piezoelectric vibrating piece
JP2004364019A (en) * 2003-06-05 2004-12-24 Seiko Epson Corp Piezoelectric vibration chip, piezoelectric vibrator, piezoelectric oscillator, gyroscope sensor, electronic apparatus, and manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004187253A (en) * 2002-12-02 2004-07-02 Herutsu Kk Supporting structure for quartz oscillator
JP2004200915A (en) * 2002-12-17 2004-07-15 Seiko Epson Corp Quartz vibrating piece, its manufacturing method, quartz device using the same, and portable telephone unit and electronic apparatus using quartz device
JP2004289650A (en) * 2003-03-24 2004-10-14 Seiko Epson Corp Manufacturing of piezoelectric device and piezoelectric vibrating piece
JP2004364019A (en) * 2003-06-05 2004-12-24 Seiko Epson Corp Piezoelectric vibration chip, piezoelectric vibrator, piezoelectric oscillator, gyroscope sensor, electronic apparatus, and manufacturing method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023730A1 (en) * 2008-08-27 2010-03-04 セイコーインスツル株式会社 Piezoelectric vibrator, oscillator, electronic apparatus and radio clock, and method for manufacturing piezoelectric vibrator
CN102197586A (en) * 2008-08-27 2011-09-21 精工电子有限公司 Piezoelectric vibrator, oscillator, electronic apparatus and radio clock, and method for manufacturing piezoelectric vibrator
JP5128670B2 (en) * 2008-08-27 2013-01-23 セイコーインスツル株式会社 Piezoelectric vibrator, oscillator, electronic device, radio timepiece, and method for manufacturing piezoelectric vibrator
US8410861B2 (en) 2008-08-27 2013-04-02 Seiko Instruments Inc. Piezoelectric vibrator, oscillator, electronic equipment and radio-controlled timepiece, and method of manufacturing piezoelectric vibrator
JP2010135973A (en) * 2008-12-03 2010-06-17 Nippon Dempa Kogyo Co Ltd Method for manufacturing piezoelectric device
JP2010183537A (en) * 2009-02-09 2010-08-19 Seiko Instruments Inc Piezoelectric vibration element manufacturing method and piezoelectric vibration element, piezoelectric vibrator, oscillator, electronic apparatus, and radio clock
CN102082555A (en) * 2009-11-27 2011-06-01 精工电子有限公司 Piezoelectric vibrating reed, piezoelectric vibrator, method of manufacturing piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece
JP2015103927A (en) * 2013-11-22 2015-06-04 株式会社大真空 Tuning folk type piezoelectric vibration piece, and piezoelectric vibrator
JP2016139899A (en) * 2015-01-27 2016-08-04 京セラクリスタルデバイス株式会社 Crystal device and manufacturing method of the same
JP7565633B2 (en) 2022-11-21 2024-10-11 成都泰美克晶体技術有限公司 New tuning fork type crystal oscillator, its manufacturing method and piezoelectric device
CN118413206A (en) * 2024-06-28 2024-07-30 深圳新声半导体有限公司 Surface acoustic wave filter and electronic equipment

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