JP2008108759A - Method of manufacturing nitride material - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride material capable of performing ultraviolet emission having high efficiency with narrow spectrum width, at room temperature and at low cost. <P>SOLUTION: An aluminum nitride thin film to which gadolinium is added is manufactured, by performing sputtering in the atmosphere of gas 67 where argon and nitrogen are mixed with an aluminum metal plate 641 and a gadolinium metal plate 642 as target material. An aluminum nitride thin film, to which gadolinium is added, is manufactured by performing sputtering in the atmosphere of argon gas 68 with an aluminum nitride metal plate 643 and the gadolinium metal plate 642 target materials. Preferably, a thin film is formed on a silicon substrate 66. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a nitride material, and more particularly to a method for manufacturing a nitride material capable of emitting light in the ultraviolet region.

  Currently, solid-state ultraviolet light-emitting devices such as ultraviolet light-emitting diodes are used as solid-state excitation light sources, ultra-high integrated optical recording device light sources, gas lasers for measurement, photocatalytic decomposition treatment light sources for environmental pollutants, sterilization light sources, bio Various application fields such as medical applications are expected. Therefore, an ultraviolet light emitting device using aluminum nitride gallium (AlGaN) which is a mixed crystal semiconductor of gallium nitride (GaN) and aluminum nitride (AlN) has been actively proposed (for example, Non-Patent Document 1). . Such aluminum gallium nitride (AlGaN) emits ultraviolet light with energy corresponding to the forbidden band width due to the transition of electrons from the conduction band to the valence band.

  However, in the ultraviolet light emitting device using aluminum gallium nitride (AlGaN), the energy position occupied by the electrons is thermally spread, and the electrons may fall into the impurity energy position in the forbidden band. It has been difficult to obtain highly efficient ultraviolet light emission with a narrow spectrum width.

Accordingly, an ultraviolet light emitting device in which gadolinium (Gd) is added to aluminum nitride (AlN) has been proposed (for example, Non-Patent Document 2 and Patent Document 1). According to this, electrons fall into the generium (Gd) energetically localized inner core level, and ultraviolet light is emitted by the transition between the inner core levels. Therefore, high efficiency light emission with a narrow spectrum width at room temperature. Can be obtained. As a method for manufacturing an ultraviolet light emitting device in which gadolinium (Gd) is added to aluminum nitride (AlN), a single crystal film is currently formed on a silicon carbide (SiC) substrate using a molecular beam epitaxial growth method (MBE method). Only things are known.
Hiroshi Amano, “Development Trend of Ultraviolet Light Sources Using Group III Nitride Semiconductors”, Applied Physics, Japan Society of Applied Physics, January 2005, Vol. 74, No. 11, p1433-1436 Sung Woo Choi and 9 others, “Emisssion Spectra From AlN and GaN doped with rare earth elements”, Journal of Alloys and Compounds, 408-412 (2006) p717-p720 JP 2003-45900 A

  However, the molecular beam epitaxial growth method (MBE method) described above requires a complicated device including a cooling device such as liquid nitrogen and an exhaust system pump capable of realizing an ultra-high vacuum. A lot of expenses such as running cost by using etc. are required. Further, silicon carbide (SiC) used as a substrate is more expensive than silicon (Si) or the like that is generally used, and this also increases the cost.

  Accordingly, an object of the present invention is to provide a manufacturing method capable of manufacturing a nitride material capable of high-efficiency ultraviolet light emission having a narrow spectrum width at room temperature at a low cost.

  In order to achieve the above object, a method for producing a nitride material according to the first aspect of the invention includes a step of performing sputtering in an atmosphere in which aluminum and gadolinium are used as target materials and nitrogen is mixed in an inert gas. It is characterized by that.

  A method for producing a nitride material according to a second aspect of the invention includes a step of performing sputtering using aluminum nitride and gadolinium as target materials.

  The nitride material manufacturing method according to claim 3 is characterized in that sputtering is performed using silicon as a substrate.

  According to the method of the first aspect of the present invention, an aluminum nitride (AlN) thin film to which gadolinium (Gd) is added by sputtering in an atmosphere in which aluminum and gadolinium are used as target materials and nitrogen is mixed in an inert gas. Can be generated. Since sputtering can be performed with relatively simple equipment, aluminum nitride (AlN) to which gadolinium (Gd), which is a nitride material capable of high-efficiency ultraviolet light emission with a narrow spectral width at room temperature, is added, has a low cost. Can be manufactured.

  According to the method of the second aspect of the present invention, an aluminum nitride thin film to which gadolinium is added can be generated by performing sputtering in an atmosphere only with an inert gas using aluminum nitride and gadolinium as target materials. Sputtering can be performed with relatively simple equipment, so gadolinium (Gd), which is a nitride material capable of high-efficiency ultraviolet light emission with a narrow spectrum width at room temperature, without adding nitrogen to the atmosphere was added. Aluminum nitride (AlN) can be produced at low cost.

  According to the invention of claim 3, since silicon is used for the substrate, an inexpensive nitride material can be provided as compared with the case where silicon carbide or the like is used for the substrate.

  Embodiments of the present invention will be described below with reference to the drawings. First, as a first embodiment of the present invention, silicon (Si) is obtained by performing high-frequency magnetron sputtering in an atmosphere containing nitrogen (N) and argon (Ar) using aluminum (Al) and gadolinium (Gd) as target materials. A case where an aluminum nitride (AlN) thin film to which gadolinium (Gd) is added is formed on a (Si) substrate will be described.

  As shown in FIG. 1, the high-frequency magnetron sputtering apparatus 10 has a high-frequency power source 30, a matching unit 40, and a blocking capacitor 50 arranged in series on a circuit 20, and the circuit 20 has a predetermined interval inside the chamber 60. Disconnected. The circuit 20 is provided with a ground at an appropriate position. Further, the matching unit 40 is appropriately provided with a coil 401 and a variable capacitor 402, and plays a role of efficiently supplying a voltage applied from a high-frequency power source to the plasma. The interior of the chamber 60 is configured to be hermetically sealed, connected to a vacuum pump 82 via a valve 81, and connected to a high pressure gas cylinder 93 of argon and a high pressure gas cylinder 94 of nitrogen via a valve 91 and a pressure reducing valve 92, respectively. A substrate holder 62 is supported above the interior of the chamber 60 by a support member 61 fixed to the upper surface of the chamber 60. Note that one end of the circuit 20 is wired inside the support member 61. A target material 64 is fixed below the inside of the chamber 60 by a support member 63 fixed to the lower surface of the chamber. A permanent magnet 65 is supported by a support member 63 at a position below the target material 64. The other end of the circuit 2 is wired to the target material 64 inside the support member 63.

  In the first embodiment, a silicon substrate 66 is fixed to the downward surface of the substrate holder 62 as a substrate. As the target material 64, an aluminum metal plate 641 is fixed to the support member 63, and a gadolinium metal plate 642 is placed on the upper surface of the aluminum metal plate 641.

  When the gadolinium (Gd) -added aluminum nitride (AlN) thin film is formed by using the high-frequency magnetron sputtering apparatus 1 configured as described above, first, the vacuum pump 82 is operated to bring the inside of the chamber 60 to, for example, 0.1 Pa. Reduce pressure. Next, the argon / nitrogen mixed gas 67 is introduced from the high pressure gas cylinder 93 and the high pressure gas cylinder 94 of nitrogen through the pressure reducing valves 92 and 92 so that the pressure in the chamber 60 becomes 0.9 Pa, for example. Then, the high frequency power supply is turned on to supply a high frequency current.

  In this way, when high frequency power is applied, plasma containing argon ions is generated. The argon ions are accelerated by an electric field generated by applying high-frequency power and collide with the aluminum metal plate 641 and the gadolinium metal plate 642 as the target material 64. When argon ions collide with the aluminum metal plate 641 and the gadolinium metal plate 642, aluminum and gadolinium are repelled into the atmosphere by the impact. The aluminum (Al) blown into the atmosphere reacts with nitrogen ions in the atmosphere to become aluminum nitride (AlN), which is deposited on the silicon substrate 66 together with gadolinium (Gd) to form a thin film. To do. In this embodiment, since the permanent magnet 65 is disposed below the aluminum metal plate 641 and the gadolinium metal plate 642, which are target materials, argon ions are collected near the aluminum metal plate 641 and the gadolinium metal plate 643. Since it is further accelerated and collided, sputtering can be performed more efficiently.

  Next, as a second embodiment of the present invention, a silicon (Si) substrate is formed by performing high-frequency magnetron sputtering using aluminum nitride (AlN) and gadolinium (Gd) as target materials and argon (Ar) as an atmospheric gas. A case where an aluminum nitride (AlN) thin film to which gadolinium (Gd) is added is formed will be described with reference to FIG. Since the configuration other than the target material and the atmosphere is the same as that of the first embodiment, the same reference numerals are given and description thereof is omitted.

  In the second embodiment, as the target material 64, an aluminum nitride metal plate 643 is fixed to the support member 63, and a gadolinium metal plate 642 is placed on the upper surface of the aluminum nitride metal plate 643.

  When forming an aluminum nitride (AlN) thin film added with gadolinium (Gd), first, the inside of the chamber 60 is depressurized to, for example, 0.1 Pa using the vacuum pump 82, and then the argon gas is passed from the high-pressure gas cylinder 93 of argon through the pressure reducing valve 92. The gas 68 is injected so that the pressure in the chamber 60 becomes 0.9 Pa, for example. Then, the high frequency power supply is turned on to supply a high frequency current.

  In this way, when high frequency power is applied, plasma containing argon ions is generated. The argon ions are accelerated by an electric field generated by applying high-frequency power and collide with the aluminum nitride metal plate 643 and the gadolinium metal plate 642 as the target material 64. When argon ions collide with the aluminum nitride metal plate 643 and the gadolinium metal plate 642, aluminum nitride (AlN) and gadolinium (Gd) are blown into the atmosphere by the impact. Since argon ions, which are rare gases, do not bind to aluminum or gadolinium, aluminum nitride (AlN) and gadolinium (Gd) blown into the atmosphere are directly deposited on the silicon substrate 66 to form a thin film.

  Next, as a third embodiment of the present invention, a target material is prepared by mixing aluminum (Al) and gadolinium (Gd), and a DC power source is used in an atmosphere containing nitrogen (N) and argon (Ar) 2. A case where an aluminum nitride (AlN) thin film to which gadolinium (Gd) is added is formed on a silicon (Si) substrate by pole sputtering will be described.

  As shown in FIG. 3, the bipolar sputtering apparatus 1 is provided with a DC power supply 31 on a circuit 21, and the circuit 21 is wired inside the chamber 70 and disconnected at a predetermined interval. The inside of the chamber 70 is configured to be hermetically sealed, connected to a vacuum pump 82 via a valve 81, and connected to a high pressure gas cylinder 93 of argon and a high pressure gas cylinder 94 of nitrogen via a valve 91 and a pressure reducing valve 92, respectively. . A support member 71 and a support member 72 fixed to the upper surface of the chamber 70 are provided above the chamber 70, and the support members 71 and 72 support target holders 73 and 74, respectively. The ends of the circuit 21 are wired inside the support members 71 and 72, respectively. A substrate mounting table 76 is supported below the inside of the chamber 70 by a support member 75 fixed to the lower surface of the chamber 70.

  In the third embodiment, an aluminum and gadolinium mixed metal plate 780 is attached to the inward surface of the target holder 73, and an aluminum metal plate 641 is attached to the inward surface of the target holder 74. Has been. A silicon substrate 66 is mounted on the substrate mounting table 76 as a substrate.

  When a gadolinium-added (Gd) aluminum nitride (AlN) thin film is formed using the bipolar sputtering apparatus 11 configured as described above, first, the vacuum pump 82 is operated to increase the pressure in the chamber 70 to, for example, 0.1 Pa. Reduce pressure. Next, using a high pressure gas cylinder 93 of argon, a high pressure gas cylinder 94 of nitrogen, and a pressure reducing valve 92, an argon / nitrogen mixed gas 67 is introduced so that the pressure in the chamber 70 becomes 0.9 Pa, for example. Then, the DC power supply is turned on to supply a DC current.

  In this way, when DC power is applied, plasma containing argon ions is generated. The argon ions are accelerated by an electric field generated by applying DC power and collide with the aluminum metal plate 641 and the aluminum / gadolinium mixed metal plate 780 which are target materials. When argon ions collide with the aluminum metal plate 641 and the aluminum / gadolinium mixed metal plate 780, aluminum (Al) and gadolinium (Gd) are repelled into the atmosphere by the impact. Then, aluminum (Al) blown into the atmosphere reacts with nitrogen ions in the atmosphere to become aluminum nitride (AlN), and gadolinium (Gd) is deposited on the silicon substrate 66 to form a thin film. Form.

  Next, as a fourth embodiment of the present invention, aluminum nitride (AlN) and gadolinium (Gd) are mixed to form a target material, and bipolar sputtering using a DC power source is performed in an argon (Ar) atmosphere. A case where an aluminum nitride (AlN) thin film added with gadolinium (Gd) is formed on a silicon (Si) substrate will be described. Since the configuration other than the target material and the atmosphere is the same as that of the third embodiment, the same reference numerals are given and description thereof is omitted.

  In the fourth embodiment, an aluminum nitride and gadolinium mixed metal plate 781 is attached to the inward surface of the target holder 73 as a target, and an aluminum nitride metal plate 643 as a target is attached to the inward surface of the target holder 74. Is attached.

  When a gadolinium-added (Gd) aluminum nitride (AlN) thin film is formed, first, the pressure in the chamber 70 is reduced to, for example, 0.1 Pa using the vacuum pump 82. Next, argon gas 68 is injected using a pressure reducing valve 92 and an argon high-pressure gas cylinder 93 so that the pressure in the chamber 70 becomes 0.9 Pa, for example. Then, the DC power supply is turned on to supply a DC current.

  In this way, when DC power is applied, plasma containing argon ions is generated. The argon ions are accelerated by an electric field generated by applying DC power and collide with the aluminum nitride metal plate 643 and the aluminum nitride / gadolinium mixed metal plate 781 which are target materials. When argon ions collide with the aluminum nitride metal plate 643 and the aluminum nitride / gadolinium mixed metal plate 781, aluminum nitride (AlN) and gadolinium (Gd) are repelled into the atmosphere by the impact. The bounced aluminum nitride (AlN) and gadolinium (Gd) are deposited on the silicon substrate to form a thin film.

  The sputtering apparatus used for sputtering according to the present invention is not limited to the high-frequency magnetron sputtering apparatus 10 and the bipolar sputtering apparatus 11 described above. For example, various sputtering apparatuses such as a coaxial magnetron sputtering apparatus, an ECR sputtering apparatus, a multipolar sputtering apparatus, an ion beam sputtering apparatus, and a sputtering gun sputtering apparatus can be used.

  The substrate used for sputtering according to the present invention is preferably the above-mentioned silicon (Si) substrate, but is not limited thereto. For example, a sapphire substrate or a silicon carbide (SiC) substrate can be used. Note that silicon (Si) is less expensive than other substrate materials, is widely spread, and has high reliability in application of technology, so that it can be suitably used as the substrate of the present invention. In addition, unlike other substrate materials, sapphire can transmit ultraviolet light having a wavelength of 350 nanometers, so that more efficient ultraviolet light emission can be realized. Silicon carbide (SiC) is excellent in thermal, chemical, and mechanical stability, and is therefore preferably used when placed in a high temperature environment or when chemical resistance is required.

  Moreover, the atmospheric gas used for sputtering according to the present invention is not limited to the above-mentioned mixed gas of nitrogen and argon. For example, a rare gas such as helium (He), neon (Ne), krypton (Kr), xenon (Xe), or radon (Rn) may be used instead of argon (Ar). That is, any gas that hardly reacts with aluminum (Al) and gadolinium (Gd) and that easily generates plasma may be used.

  Further, as described in the second embodiment and the fourth embodiment, only the rare gas may be used as the atmospheric gas and nitrogen may not be injected. In this case, an aluminum gadolinium nitride thin film can be generated by using aluminum nitride and gadolinium as targets.

  The temperature of the substrate when performing sputtering of the present invention is preferably between room temperature (27 degrees Celsius) and 200 degrees Celsius. When the substrate temperature is lower than room temperature (27 degrees Celsius), the quality of the aluminum gadolinium thin film deposited on the substrate is deteriorated, and when the substrate temperature exceeds 200 degrees Celsius, the aluminum nitride gadolinium thin film is hardly formed on the substrate. Because. Moreover, it is preferable that the gas pressure of atmospheric gas when performing sputtering of this invention exists in the range of 0.1 Pa or more and 1 Pa or less.

  In the sputtering of the present invention, the ratio of argon and nitrogen contained in the atmospheric gas when aluminum and gadolinium are used as the target material is such that nitrogen is 1 or more and 1.5 or less when argon is 1. It is preferable that If the proportion of argon is too low, plasma is difficult to generate and efficient thin film generation cannot be achieved. On the other hand, if the proportion of nitrogen is too low, aluminum and gadolinium that are sputtered and jumped out into the atmosphere are difficult to react with nitrogen ions, so that an aluminum nitride gadolinium thin film is hardly formed.

  Further, the weight ratio of gadolinium to the entire target material is preferably 2% or more and 50% or less. When the weight ratio of gadolinium is less than 2 percent, the content of gadolinium contained in the produced aluminum gadolinium thin film is reduced, so that highly efficient ultraviolet light emission cannot be performed. Further, when the weight ratio of gadolinium is increased and the weight ratio of aluminum is too small, the quality of the aluminum nitride gadolinium thin film is deteriorated.

  The power applied to the target material of the present invention is preferably 200 watts or more and 2000 watts or less. If the applied power is too low, it is difficult to generate plasma or perform sputtering. On the other hand, if the power is too high, the target and the substrate become too hot. Furthermore, in the present invention, the film formation time is preferably 15 minutes or longer and 120 minutes or shorter.

  When sputtering is performed under the above conditions, an aluminum gadolinium thin film having a film thickness of 200 nanometers or more and 1200 nanometers or less is generated. The aluminum gadolinium nitride thin film thus produced is formed by the transition of electrons from the 6p excited level of the core energy level of the deposited gadolinium in the atom to the 8s ground level as shown in FIG. , It is possible to emit ultraviolet light with a narrow spectral width at a wavelength of about 315 nanometers.

  Next, specific embodiments of the present invention will be described. Needless to say, the present invention is not limited to the following examples.

[Example 1]
In Example 1, as shown in Table 1, the high-frequency magnetron sputtering apparatus 10 shown in FIG. 1 was used as the sputtering apparatus. Further, a silicon single crystal wafer having a diameter of 5 centimeters was used as the substrate, and the (100) crystal plane was arranged as the film forming surface. The target material was four gadolinium thin plates each having a 1 cm square and a thickness of 1 mm on an aluminum metal plate having a diameter of 5 cm. A mixed gas having a mixture ratio of argon and nitrogen of 1: 1 was injected so that the atmosphere in the chamber 60 was 0.9 Pa. The circuit 20 was energized with a high frequency power supply 30 at a frequency of 13.56 MHz and 200 watts for 15 minutes. At this time, the temperature of the silicon single crystal wafer was controlled to be room temperature (27 degrees Celsius).

As a result of sputtering in Example 1, when the (100) crystal plane of the silicon single crystal wafer was observed with a SEM (Scanning Electron Microscope), the surface flat aluminum nitride containing gadolinium with a film thickness of about 500 nm was obtained. The thin film could be observed on the entire surface of the substrate. Further, when the obtained film was irradiated with an electron beam at room temperature using an acceleration voltage of 10 kilovolts, as shown in FIG. 6, the cathode luminescence (CL) of clear ultraviolet light having a light emission peak at about 319 nanometers. Was observed.

[Example 2]
In Example 2, as shown in FIG. 3, a counter type bipolar sputtering apparatus 11 was used as a sputtering apparatus. Further, as shown in Table 2, a silicon single crystal wafer having a diameter of 5 centimeters was used as the substrate, and the substrate was placed on the substrate placing table 76 so as to produce a thin film on the (111) crystal plane. Also, in one target holder 73, a rectangular parallelepiped aluminum and gadolinium mixed metal plate having a side of 100 millimeters and the other side of 160 millimeters and a thickness of 5 millimeters was installed as a target. The mixing ratio of gadolinium in the mixed metal plate of aluminum and gadolinium was 5 weight percent. In the other target holder 74, a rectangular parallelepiped aluminum plate having a side of 100 mm and the other side of 160 mm and a thickness of 5 mm was installed as a target. A mixed gas in which the ratio of argon and nitrogen was mixed at a ratio of 3 to 4 was injected so that the atmosphere in the chamber 70 was a gas pressure of 0.56 Pascal. The circuit 21 was supplied with 2000 watts of DC power for 120 minutes using a DC power source 31. At this time, the temperature of the silicon single crystal wafer was controlled to be 200 degrees Celsius.

  As a result of sputtering in Example 2, when the (111) crystal plane of the silicon single crystal wafer was observed with an SEM, a flat surfaced aluminum nitride thin film containing gadolinium having a thickness of about 1200 nanometers could be observed on the entire surface of the substrate. When this sample was examined by X-ray diffraction (XRD), a graph of X-ray diffraction intensity shown in FIG. 7 was obtained. According to FIG. 7, it can be seen that there is a diffraction peak from aluminum nitride other than the silicon substrate. Further, when the obtained film was irradiated with an electron beam at room temperature using an acceleration voltage of 10 kilovolts, clear ultraviolet emission having emission peaks at wavelengths of 313 nanometers and 318 nanometers was seen as shown in FIG. .

[Example 3]
In Example 3, the gas pressure of the atmosphere in the chamber 70 was set to 0.76 Pascal, and the temperature of the silicon single crystal wafer was controlled to 100 degrees Celsius. Further, the energization time of the DC power was set to 50 minutes. The other points were performed under the same conditions as in Example 2.

  As a result of sputtering in Example 3, when the (111) crystal plane of the silicon single crystal wafer was observed with an SEM, a flat surfaced aluminum nitride thin film containing gadolinium having a film thickness of about 500 nm could be observed on the entire surface of the substrate. When the obtained film was irradiated with an electron beam at an acceleration voltage of 10 kilovolts at room temperature, clear ultraviolet light emission having a light emission peak at a wavelength of 312 nanometers was observed as shown in FIG.

[Example 4]
In Example 4, the gas pressure of the atmosphere in the chamber 7 was set to 0.76 Pascal, and the temperature of the silicon single crystal wafer was controlled to 100 degrees Celsius. Also, 1000 watts of DC power was applied for 100 minutes. The other points were performed under the same conditions as in Example 2.

As a result of sputtering in Example 4, when the (111) crystal plane of the silicon single crystal wafer was observed by SEM, a flat aluminum nitride thin film containing gadolinium having a thickness of about 500 nanometers could be observed on the entire surface of the substrate. When the obtained film was irradiated with an electron beam at an acceleration voltage of 10 kilovolts at room temperature, clear ultraviolet light emission having a light emission peak at a wavelength of 312 nanometers was observed as shown in FIG.

  As shown in Examples 1 to 4 above, an aluminum nitride thin film containing gadolinium can be formed on the entire surface of the silicon substrate by sputtering in an atmosphere gas containing nitrogen using aluminum and gadolinium as targets. . The aluminum nitride thin film containing gadolinium has a light emission peak within a wavelength range of 310 to 320 nanometers.

  Although not shown in Examples 1 to 4, an aluminum nitride thin film containing gadolinium is formed on the entire surface of the silicon substrate by sputtering in an atmosphere gas containing almost no nitrogen using aluminum nitride and gadolinium as targets. can do. In this case as well, a thin film similar to that in Examples 1 to 4 is formed, and naturally, the emission peak is in the wavelength range of 310 to 320 nanometers.

  Light emits ultraviolet light at a wavelength of 250 to 350 nanometers. However, ultraviolet light having a short wavelength around 250 nanometers has a problem that the transmittance to the lens is low and various uses are restricted. In addition, ultraviolet light having a wavelength of around 350 nanometers is close to visible light, making it difficult for chemical reactions to occur, making application in various fields difficult. The aluminum nitride thin film containing gadolinium produced according to the present invention can emit high-efficiency ultraviolet light having a narrow spectral width from a wavelength of 310 nm to 320 nm at room temperature. Can be applied in the field.

  The present invention can be used, for example, in the manufacture of ultraviolet light emitting diodes.

It is a schematic sectional drawing of the high frequency magnetron sputtering apparatus which uses aluminum and gadolinium as a target material. It is a schematic sectional drawing of the high frequency magnetron sputtering apparatus which uses aluminum nitride and gadolinium as a target material. It is a schematic sectional drawing of the opposing bipolar sputtering apparatus which uses aluminum and gadolinium as a target material. It is a schematic sectional drawing of the opposing bipolar sputtering apparatus which uses aluminum nitride and gadolinium as a target material. It is a figure which shows the energy state of each level of the aluminum nitride added with gadolinium. 3 is a graph showing an emission peak of the sample of Example 1. 6 is a graph showing the X-ray diffraction intensity of the sample of Example 2. 6 is a graph showing an emission peak of a sample of Example 2. 6 is a graph showing an emission peak of a sample of Example 3. 6 is a graph showing an emission peak of a sample of Example 4.

Explanation of symbols

64 Target material 641 Aluminum metal plate (Al)
642 Gadolinium metal plate (Gd)
643 Aluminum nitride metal plate (AlN)
66 Silicon substrate (Si)
67 Argon and nitrogen mixed gas (Ar, N)
68 Argon gas (Ar)
780 Aluminum and gadolinium mixed metal plate (Al, Gd)
781 Aluminum nitride, gadolinium mixed metal plate (AlN, Gd)

Claims (3)

  A method for producing a nitride material comprising a step of performing sputtering in an atmosphere in which nitrogen and gadolinium are used as target materials and nitrogen is mixed in an inert gas.   A method for producing a nitride material, comprising: a step of performing sputtering using aluminum nitride and gadolinium as target materials.   3. The method for producing a nitride material according to claim 1, wherein sputtering is performed using silicon as a substrate.

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