JP2008108596A - Method for mask vapor deposition and mask vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for mask vapor deposition and a mask vapor deposition apparatus capable of improving the close contact of chips and a substrate to be treated even in the case of using a mask with a plurality of the chips fixed on a support substrate. <P>SOLUTION: In the method for mask vapor deposition and the mask vapor deposition apparatus, vapor deposition is carried out by arranging a mask 10 which is formed by bonding a plurality of chips having apertures 22 to a support substrate 30 at the lower surface side of a substrate 200 to be treated. At this time, weights 18 are arranged in regions 221 overlapped with the chips 20 on the back surface 220 of the substrate 200. Then, even if the center of the mask 10 is bent downward in a recessed state by its weight and bending or inclination occurs in the chips 20, at least the region of the substrate 200 overlapped with the chips 20 is changed in shape by imitating correctly the bending or inclination of the chips 20 since the weights 18 press the regions 221 overlapped with the chips 20 on the back surface 220 of the substrate 200. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a mask vapor deposition method and a mask vapor deposition apparatus that perform vacuum vapor deposition or sputter vapor deposition in a state where a mask is superimposed on a substrate to be processed.

  In manufacturing processes of various semiconductor devices and electro-optical devices, a mask having an opening may be stacked on a substrate to be processed, and film formation such as a vacuum evaporation method or a sputtering method may be performed in this state. For example, in the manufacturing process of an organic electroluminescence (hereinafter referred to as EL) device as an electro-optical device, when a photolithography technique is used to form a light-emitting organic EL material (organic functional layer) in a predetermined shape, patterning is performed. When the resist mask is removed with an etching solution or oxygen plasma, deterioration occurs when the organic material comes into contact with moisture or oxygen. For this reason, in order to form an organic functional layer, the mask vapor deposition method which does not require a resist mask is suitable.

  In such a mask vapor deposition method, if a gap is generated between the substrate to be processed and the mask, the film forming accuracy is lowered. Therefore, a method is adopted in which the mask is formed of a magnetic material, and the mask is attracted by a magnet to be in close contact with the substrate to be processed. However, if the mask is formed of a magnetic material, it is difficult to form a large-area mask. If the mask is formed of a material other than the magnetic material, the mask and the substrate to be processed are brought into close contact with each other by utilizing the attractive force of the magnet. It becomes impossible to adopt the method of making it.

  Therefore, a method has been proposed in which the substrate to be processed and the mask are overlapped with each other and the substrate to be processed is mechanically pressed toward the mask to ensure adhesion between the substrate to be processed and the mask (Patent Document 1). reference).

On the other hand, if the substrate to be processed is large, the mask must be formed large, but it is very difficult to manufacture such a mask with high accuracy. Therefore, it has been proposed to configure a mask by fixing a plurality of chips in which openings are formed to a support substrate (see, for example, Patent Document 2).
JP 2005-158571 A JP 2005-276480 A

  However, when a mask in which a plurality of chips are fixed to a support substrate is used and the substrate to be processed is pressed by the method described in Patent Document 1, a situation in which the film forming accuracy is decreased frequently occurs. The inventor of the present application has made various studies on the reason, and when using a mask in which a plurality of chips are fixed to a support substrate, pressing the substrate to be processed causes the chips to protrude toward the substrate to be processed. The inventors have found that a large gap may be generated between the substrate to be processed and the chip depending on the pressed position on the substrate to be processed.

  Based on the above knowledge, the present invention provides a mask vapor deposition method and a mask vapor deposition apparatus capable of improving the adhesion between a chip and a substrate to be processed even when a mask in which a plurality of chips are fixed to a support substrate is used. There is to do.

  In order to solve the above problems, in a mask vapor deposition method in which a mask in which an opening corresponding to a pattern to be deposited is formed is deposited on a deposition target surface side of a substrate to be processed, the mask includes the opening. A plurality of chips formed with a portion, and a support substrate that holds the plurality of chips, and at least a region of the back surface that is opposite to the film formation surface of the substrate to be processed overlaps with the chip Vapor deposition is performed with a portion pressed against the mask.

  In the present invention, in the mask vapor deposition apparatus for performing vapor deposition in a state where a mask in which an opening corresponding to a pattern to be formed is overlapped on a film formation surface side of a substrate to be processed, the mask is formed with the opening. A plurality of chips and a support substrate that holds the plurality of chips, and at least a part of a region that overlaps the chip on the back surface of the substrate to be processed that is located on the side opposite to the film formation surface. A pressing tool that presses the mask toward the mask is provided.

  In the present invention, when mask vapor deposition is performed in a state where a mask in which a plurality of chips are fixed to a support substrate is stacked on a substrate to be processed, a region overlapping with the chip on the back surface located on the opposite side of the film formation surface on the substrate to be processed Since at least a part of the substrate is pressed toward the mask, no gap is generated between the substrate to be processed and the chip. That is, in a mask in which a plurality of chips are fixed to a support substrate, the chips protrude from the support substrate toward the substrate to be processed in a stepped shape. Since the pressure is applied toward the mask, no gap is generated between the substrate to be processed and the chip. Therefore, the film formation accuracy can be improved.

  In the present invention, the substrate to be processed is often arranged with the film formation surface facing downward, and in this case, at least a part of a region overlapping the chip on the back surface of the substrate to be processed is provided. Evaporation is performed while pressing downward. When the substrate to be processed is arranged facing downward, the mask bends in a state where the center is recessed due to its own weight, and the chip is bent or tilted, but in the present invention, the region of the back surface of the substrate to be processed that overlaps the chip Since the substrate is pressed toward the mask, the substrate to be processed is deformed following the bending or inclination of the chip, so that no gap is generated between the substrate to be processed and the chip. Therefore, the film formation accuracy can be improved.

  In the present invention, the chip includes an outer frame portion around the area where the opening is formed, and is deposited in a state where a region overlapping the outer frame portion of the chip is pressed on the back surface of the substrate to be processed. It is preferable to do. If comprised in this way, even if the area | region which overlaps with a chip | tip is pressed among the back surfaces of a to-be-processed substrate, a deformation | transformation and damage will not generate | occur | produce in an opening part.

  In this invention, when the said chip | tip is provided with the rectangular planar shape, it is preferable to vapor-deposit in the state pressed along the long side of the said chip | tip at least among the back surfaces of the said to-be-processed substrate. When the chip has a rectangular planar shape, the mask bends more greatly in the long side direction than in the short side direction, so when the substrate to be processed is pressed along the long side of the chip, the space between the substrate to be processed and the chip is It is possible to reliably prevent a gap from being generated.

  In this invention, the structure which vapor-deposits in the state which pressed the some location in the area | region which overlaps with the said chip | tip among the back surfaces of the said to-be-processed substrate is employable. If comprised in this way, it can prevent more reliably that a clearance gap generate | occur | produces between a to-be-processed substrate and a chip | tip.

  In this case, it is preferable that the plurality of pressed locations on the substrate to be processed are separated from each other by 10 mm or more. If comprised in this way, since a specific location is not concentratedly pressed among the back surfaces of a to-be-processed substrate, it can prevent more reliably that a clearance gap generate | occur | produces between a to-be-processed substrate and a chip | tip. .

  In this invention, the structure which presses the said to-be-processed substrate downward by arrange | positioning the weight with the same planar shape and size as the said chip | tip with respect to the area | region which overlaps with the said chip | tip in the back surface of the said to-be-processed substrate. Can be adopted. If comprised in this way, in the state which the mask bent, at least the outer periphery of a weight presses a to-be-processed substrate below, Therefore A to-be-processed substrate and a chip | tip can be stuck.

  In the present invention, it is preferable that the substrate to be processed is pressed downward by disposing a plurality of weights having a size smaller than that of the chip with respect to a region overlapping the chip on the back surface of the substrate to be processed. If comprised in this way, in the state which the mask bent, at least the outer periphery of a weight presses a to-be-processed substrate below, Therefore A to-be-processed substrate and a chip | tip can be stuck. At that time, since a plurality of weights are arranged in the region overlapping with the chip, the substrate to be processed can be pressed over the whole.

  In the present invention, by placing a weight having a protrusion, which protrudes from a flat plate portion, on the back surface side of the substrate to be processed, on the back surface side of the substrate to be processed. It is preferable to press it. If comprised in this way, in the state which the mask bent, since the several places of a to-be-processed substrate can be pressed with the edge of a flat plate part, the edge of a processus | protrusion, etc., a to-be-processed substrate can be pressed over the whole. .

  A mask vapor deposition method and a mask vapor deposition apparatus to which the present invention is applied will be described below with reference to the drawings. In the following description, after describing a common configuration in each embodiment, a characteristic part of each embodiment will be described. In each figure used for description, the scale is different for each member in order to make each member recognizable on the drawing. In the following embodiments, an organic EL device is exemplified as an object to which the present invention is applied.

[Common configuration]
(Configuration example of organic EL device)
FIG. 1 is a cross-sectional view of an essential part of an organic EL device to which the present invention is applied. An organic EL device 1 shown in FIG. 1 is used as a line head used in a display device or an electrophotographic printer, and includes a light emitting element group 3A formed by arranging a plurality of organic EL elements 3. I have. In the case where the organic EL device 1 is a bottom emission type in which the light emitted from the light emitting layer 7 is emitted from the pixel electrode 4 side, the emitted light is extracted from the element substrate 2 side. Therefore, a transparent or translucent substrate is used as the element substrate 2. For example, glass, quartz, resin (plastic, plastic film) and the like can be mentioned, and a glass substrate is particularly preferably used. On the element substrate 2, a circuit unit 5 including a driving transistor 5a (thin film transistor) and the like electrically connected to the pixel electrode 4 is formed on the lower layer side of the light emitting element group 3A. An organic EL element 3 is formed on the substrate. The organic EL element 3 includes a pixel electrode 4 that functions as an anode, a hole transport layer 6 that injects / transports holes from the pixel electrode 4, a light-emitting layer 7 (organic functional layer) made of an organic EL material, An electron injection layer 8 for injecting / transporting electrons and a cathode 9 are stacked in this order.

  In order to manufacture such an organic EL device 1, each layer is formed on the element substrate 2 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. 6, the organic functional layers such as the light emitting layer 7 and the electron injection layer 8 are easily deteriorated by moisture and oxygen. For this reason, when an organic functional layer such as the light emitting layer 7 is formed, and further, when the cathode 9 is formed, if a patterning process using a resist mask is performed, the resist mask is removed with an etching solution or oxygen plasma. At this time, the organic functional layer is deteriorated by moisture or oxygen. Therefore, in this embodiment, when forming an organic functional layer such as the light emitting layer 7 and further when forming the cathode 9, a thin film having a predetermined shape is formed on the element substrate 2 by using a mask vapor deposition method. A patterning process using a resist mask is not performed. In this mask vapor deposition method, vapor deposition is performed in a state where a mask is overlaid at a predetermined position on the lower surface side of a large substrate (element substrate 2 / substrate to be processed). In the case of forming the light emitting layer 7, the low molecular organic EL material is heated and evaporated to form the light emitting layer 7 in a stripe shape on the lower surface of the large substrate through the opening of the mask. The formation of the hole transport layer 6, the electron injection layer 8, the cathode 9 and the like is performed in substantially the same manner.

(Configuration example of mask and mask evaporation system)
FIG. 2 is a schematic perspective view of a mask to which the present invention is applied. FIG. 3 is a schematic configuration diagram of a mask vapor deposition apparatus to which the present invention is applied.

  A mask 10 shown in FIG. 2 is a mask used for mask vapor deposition, and has a configuration in which a plurality of chips 20 are attached to a rectangular support substrate 30 that forms a base substrate. In this embodiment, the chip 20 is made of silicon. Each chip 20 is aligned and bonded to the support substrate 30 by anodic bonding or ultraviolet curable adhesive.

  The chip 20 is provided with a plurality of long hole-shaped openings 22 corresponding to the film formation pattern in parallel at regular intervals, and an outer frame part 25 is formed around the area where the openings 22 are formed. The support substrate 30 is provided with a plurality of opening regions 32 made of rectangular through holes in parallel and at regular intervals, and the plurality of chips 20 are arranged on the support substrate 30 so as to close the opening regions 32 of the support substrate 30. It is fixed to. A substrate 40 having an alignment mark 39 is also bonded to the support substrate 30. The alignment mark 39 is for aligning the mask 10 when performing vapor deposition using the mask 10. The alignment mark 39 may be formed on the outer frame portion 25 of the chip 20.

  Here, the opening 22 of the chip 20 has a shape corresponding to the shape of the thin film pattern formed on the film formation surface of the substrate to be processed. Note that the mask 10 may have either a configuration having the same size as the deposition region for the substrate to be processed or a configuration having a size smaller than the deposition region. In the latter case, after forming a film in a predetermined region of the film formation region using the mask 10, the film is formed a plurality of times while shifting the mask 10, thereby forming the film over the entire film formation region. Do. In the latter case, film formation may be performed on the entire film formation region using a plurality of masks 10.

  In this embodiment, the chip 20 is formed of a through-groove using single crystal silicon having a plane orientation (100), single crystal silicon having a plane orientation (110), or the like using photolithography technology, wet etching, dry etching, or the like. It is manufactured by forming the opening 22. In each of the plurality of chips 20, at least two alignment marks 24 are formed on the outer frame portion 25. These alignment marks 24 are used for alignment when the chip 20 is fixed to the support substrate 30. The alignment mark 24 is formed by a photolithography technique or crystal anisotropic etching.

  The constituent material of the support substrate 30 preferably has the same or close thermal expansion coefficient as that of the constituent material of the chip 20. Since the chip 20 is made of silicon, the support substrate 30 is made of a material having the same or close thermal expansion coefficient as that of silicon. By doing in this way, generation | occurrence | production of the "distortion" or "stagnation" by the difference in the thermal expansion amount of the support substrate 30 and the chip | tip 20 can be suppressed. In the present embodiment, a transparent substrate made of alkali-free glass, borosilicate glass, soda glass, quartz, or the like is used as the support substrate 30.

  An alignment mark 34 that is aligned with the alignment mark 24 on the chip 20 side when the chip 20 is bonded to the support substrate 30 is formed on the support substrate 30 around the opening region 32. In addition, an alignment mark 33 that is aligned with the alignment mark 39 on the substrate 40 side is also formed on the support substrate 30. The alignment marks 33 and 34 can be formed of a metal film (thin film) such as chromium (Cr film) by a photolithography technique and wet etching. The alignment marks 33 and 34 can also be formed as recesses on the support substrate 30 by laser irradiation, dry etching, or wet etching.

  The mask vapor deposition apparatus provided with the mask 10 having such a configuration has, for example, the configuration shown in FIGS. In the mask vapor deposition apparatus 100 shown in FIGS. 3A and 3B, a vapor deposition source 120 is disposed on the bottom side inside the vapor deposition chamber 110, and the vapor deposition chamber 110 has a position above the vapor deposition source 120. The substrate 200 to be processed is disposed horizontally with the deposition surface 210 facing downward. The mask 10 described with reference to FIG. 2 is overlaid on the lower surface side of the substrate to be processed 200, and the chip 20 of the mask 10 is placed on the lower surface (film formation surface 210) of the substrate to be processed 200. It is in contact. In this embodiment, inside the vapor deposition chamber 110, a holder portion 130 that supports the outer peripheral region of the lower surface of the mask 10 or opposite end portions of the lower surface of the mask 10 is configured. 10 and the substrate 200 to be processed are held horizontally.

  In this state, the mask 10 may bend in a state where the center is recessed due to its own weight, and the chip 20 may bend or tilt. For example, when the external dimensions of the support substrate 30 are 440 × 540 mm and the thickness is 3 mm, the deflection occurs in the range of about 0.1 to 1 mm, although it depends on the opening size of the opening region 32 of the support substrate 30.

  Therefore, in the present invention, the pressing tool 180 is disposed on the upper surface (back surface 220) side of the substrate 200 to be processed, and the processing substrate 200 is pressed downward (to the mask 10 side) by the pressing tool 180. It is like that. In the present embodiment, as will be described below as the first to fifth embodiments, the pressing tool 180 presses at least a part of the area overlapping the chip 20 in the back surface 220 of the substrate 200 to be processed. ing.

  Here, for example, as shown in FIG. 3A, the pressing tool 180 can adopt a configuration including only a plurality of weights 18, and as shown in FIG. 3B, the plurality of weights 18. However, it is possible to adopt a configuration in which each is supported by a common holder 187 by a deformable support member 185. Among these configurations, in the configuration shown in FIG. 3B, the plurality of weights 18 are collectively disposed on the back surface 220 side of the substrate to be processed 200 and retracted from the back surface 220 side of the substrate to be processed 200. Therefore, there is an advantage that it is easy to load and unload the substrate 200 to be processed. On the other hand, the configuration shown in FIG. 3A is suitable for forming a film while rotating the substrate to be processed 200 or moving it linearly, for example. In the case of the configuration shown in FIG. 3B, the support member 185 may be a linear body such as a wire or a coil spring.

  In any case, each of the plurality of weights 18 presses at least a part of a region overlapping the chip 20 in the back surface 220 of the substrate to be processed 200. For this reason, even if the central portion of the mask 10 is bent in a state where it is recessed due to its own weight, and the chip 20 is bent or tilted, the substrate to be processed 200 can be deformed following the tilt or deflection of the chip 20. A gap does not occur between the substrate to be processed 200 and the chip 20. Further, in the mask 10 in which the plurality of chips 20 are fixed to the support substrate 30, the chips 20 protrude in a step shape from the support substrate 30 toward the substrate to be processed 200. Since a region overlapping the chip 20 in the back surface 220 of the processing substrate 200 is pressed toward the mask 10, no gap is generated between the substrate to be processed 200 and the chip 20. Therefore, the film formation accuracy can be improved.

[Embodiment 1]
4A and 4B are a perspective view and a cross-sectional view showing the positional relationship between the mask, the substrate to be processed, and the weight, respectively, in the mask vapor deposition method and the mask vapor deposition apparatus according to Embodiment 1 of the present invention. It is. In FIG. 4B, the state where the mask or the like is curved is exaggerated.

  In the mask vapor deposition method and the mask vapor deposition apparatus of this embodiment, as shown in FIGS. 4A and 4B, the mask 10 is disposed so as to overlap the film formation surface 210 (lower surface) side of the substrate 200 to be processed. Vacuum deposition is performed in the state. At that time, the weight 18 is disposed in each of the regions 221 (regions indicated by bold lines in FIG. 4B) overlapping the chip 20 in the back surface 220 (upper surface) of the substrate 200 to be processed. Here, the chip 20 is rectangular, and the weight 18 is a flat plate made of aluminum having the same planar shape and size as the chip 20.

  Therefore, in this embodiment, the weight 18 overlaps the chip 20 in the back surface 220 of the substrate to be processed 200 even when the center portion of the mask 10 is bent in a state of being depressed by its own weight and the chip 20 is bent or tilted. Since the region 221 is pressed downward, the substrate to be processed 200 is deformed following the inclination or bending of the chip 20. At that time, since the outer peripheral edge of the weight 18 presses a portion corresponding to the outer peripheral edge of the chip 20, the load point applied to the substrate to be processed 200 is represented by an arrow G. Here, since the weight 18 has the same planar shape and size as the chip 20, the entire outer peripheral edge (long side portion and short side portion) of the weight 18 is the entire outer peripheral edge (long side portion and short side portion) of the chip 20. ) Is pressed. Accordingly, at least a portion of the substrate to be processed 200 that overlaps with the chip 20 is deformed following the inclination and bending of the chip 20 accurately. Therefore, no gap is generated between the substrate to be processed 200 and the chip 20, so that the film forming accuracy can be improved.

  Moreover, since the weight 18 presses the location which overlaps with the outer frame portion 25 of the chip 20, the opening 22 is not deformed. Therefore, according to this embodiment, the film forming accuracy can be further improved.

[Embodiment 2]
FIGS. 5A and 5B are a perspective view and a cross-sectional view showing the positional relationship between the mask, the substrate to be processed, and the weight, respectively, in the mask vapor deposition method and the mask vapor deposition apparatus according to Embodiment 2 of the present invention. is there. In FIG. 5B, the state where the mask or the like is curved is exaggerated.

  In the mask vapor deposition method and the mask vapor deposition apparatus of this embodiment, as shown in FIGS. 5A and 5B, the mask 10 is formed on the film formation surface 210 (lower surface) side of the substrate 200 to be processed, as in the first embodiment. Are stacked and vacuum deposition is performed in this state. At that time, a weight 18 made of aluminum or the like is arranged in each of the regions 221 (regions indicated by bold lines in FIG. 5B) overlapping the chip 20 in the back surface 220 (upper surface) of the substrate 200 to be processed. Here, the chip 20 is rectangular, and the weight 18 includes a flat plate portion 18p having the same shape as the chip 20, and a protrusion 18a formed in a trapezoidal shape at a substantially central position in the length direction on the lower surface of the flat plate portion 18p. It has.

  Therefore, in this embodiment, the weight 18 overlaps the chip 20 in the back surface 220 of the substrate to be processed 200 even when the center portion of the mask 10 is bent in a state of being depressed by its own weight and the chip 20 is bent or tilted. Since the region 221 is pressed downward, the substrate to be processed 200 is deformed following the inclination or bending of the chip 20. In particular, in this embodiment, both ends in the longitudinal direction of the flat plate portion 18p of the weight 18 and the outer peripheral edge of the protrusion 18a press the portions corresponding to the outer peripheral edge of the chip 20, so that the load points applied to the substrate 200 to be processed Is greater than that of the first embodiment, as indicated by an arrow G. Moreover, the weight 18 presses the substrate 200 to be processed at many locations (four locations in this embodiment) in the long side direction of the chip 20 where a large amount of bending occurs. Accordingly, at least a portion of the substrate to be processed 200 that overlaps with the chip 20 is deformed following the inclination and bending of the chip 20 accurately. Therefore, no gap is generated between the substrate to be processed 200 and the chip 20, so that the film forming accuracy can be improved.

  Further, in this embodiment, one weight 18 presses the substrate 200 to be processed at a plurality of locations, but the pressed locations are separated from each other by 10 mm or more. For this reason, a large load is not applied locally to the substrate to be processed 200, and the load is applied to the entire portion of the substrate to be processed 200 that overlaps with the chip 20. Has the advantage that it deforms accurately following the inclination and bending of the chip 20.

[Embodiment 3]
FIGS. 6A and 6B are a perspective view and a cross-sectional view showing the positional relationship between the mask, the substrate to be processed, and the weight, respectively, in the mask vapor deposition method and the mask vapor deposition apparatus according to Embodiment 3 of the present invention. is there. In FIG. 6B, the state where the mask or the like is curved is exaggerated.

  In the mask vapor deposition method and the mask vapor deposition apparatus of the present embodiment, as shown in FIGS. 6A and 6B, the mask 10 is disposed so as to overlap the film formation surface 210 (lower surface) side of the substrate 200 to be processed. Vacuum deposition is performed in the state. At that time, a weight 18 made of aluminum or the like is disposed in each of the regions 221 (regions indicated by bold lines in FIG. 6B) overlapping the chip 20 on the back surface 220 (upper surface) of the substrate 200 to be processed. Here, the chip 20 has a rectangular shape, and the weight 18 has a size obtained by dividing the chip 20 into two in the longitudinal direction.

  Therefore, in this embodiment, the weight 18 overlaps the chip 20 in the back surface 220 of the substrate to be processed 200 even when the center portion of the mask 10 is bent in a state of being depressed by its own weight and the chip 20 is bent or tilted. Since the region 221 is pressed downward, the substrate to be processed 200 is deformed following the inclination or bending of the chip 20. In particular, in this embodiment, two weights 18 are arranged per chip 20, so that the number of load points applied to the substrate to be processed 200 is larger than that in the first embodiment as indicated by an arrow G. Moreover, the weight 18 presses the substrate 200 to be processed at many locations (four locations in this embodiment) in the long side direction of the chip 20 where a large amount of bending occurs. Accordingly, at least a portion of the substrate to be processed 200 that overlaps with the chip 20 is deformed following the inclination and bending of the chip 20 accurately. Therefore, no gap is generated between the substrate to be processed 200 and the chip 20, so that the film forming accuracy can be improved.

  In this embodiment, since the two weights 18 are arranged with respect to one chip 20, the two weights 18 press the substrate to be processed 200 at a plurality of locations. , Separated. For this reason, a large load is not applied locally to the substrate to be processed 200, and the load is applied to the entire portion of the substrate to be processed 200 that overlaps with the chip 20. Has the advantage that it deforms accurately following the inclination and bending of the chip 20.

[Embodiment 4]
7A and 7B are a perspective view and a cross-sectional view showing the positional relationship between the mask, the substrate to be processed, and the weight, respectively, in the mask vapor deposition method and the mask vapor deposition apparatus according to Embodiment 4 of the present invention. is there. In FIG. 7B, the state where the mask or the like is curved is exaggerated.

  In the mask vapor deposition method and the mask vapor deposition apparatus of this embodiment, as shown in FIGS. 7A and 7B, the mask 10 is placed on the deposition target surface 210 (lower surface) side of the substrate 200 to be processed. Vacuum deposition is performed in the state. At that time, a weight 18 made of aluminum or the like is disposed in each of the regions 221 (regions indicated by bold lines in FIG. 7B) overlapping the chip 20 on the back surface 220 (upper surface) of the substrate 200 to be processed. Here, the chip 20 is rectangular, and the weight 18 includes a flat plate portion 18p having the same shape as the chip 20, and two protrusions 18b extending along the long side on both sides of the lower surface of the flat plate portion 18p. Yes.

  Therefore, in this embodiment, the weight 18 overlaps the chip 20 in the back surface 220 of the substrate to be processed 200 even when the center portion of the mask 10 is bent in a state of being depressed by its own weight and the chip 20 is bent or tilted. Since the region 221 is pressed downward, the substrate to be processed 200 is deformed following the inclination or bending of the chip 20. In particular, in this embodiment, both end portions in the longitudinal direction of the flat plate portion 18p of the weight 18 and the outer peripheral edge of the protrusion 18a press the portions corresponding to the outer peripheral edge of the chip 20, so the load point applied to the substrate to be processed 200 is As indicated by an arrow G, the number is larger than that in the first embodiment. Moreover, the weight 18 presses the substrate 200 to be processed at many locations (four locations in this embodiment) in the long side direction of the chip 20 where a large amount of bending occurs. Accordingly, at least a portion of the substrate to be processed 200 that overlaps with the chip 20 is deformed following the inclination and bending of the chip 20 accurately. Therefore, no gap is generated between the substrate to be processed 200 and the chip 20, so that the film forming accuracy can be improved.

  Further, in this embodiment, one weight 18 presses the substrate 200 to be processed at a plurality of locations, but the pressed locations are separated from each other by 10 mm or more. For this reason, a large load is not applied locally to the substrate to be processed 200, and the load is applied to the entire portion of the substrate to be processed 200 that overlaps with the chip 20. Has the advantage that it deforms accurately following the inclination and bending of the chip 20.

  Furthermore, since the weight 18 presses only the portion overlapping the outer frame portion 25 of the chip 20, the opening 22 is not deformed. Therefore, according to this embodiment, the film forming accuracy can be further improved.

[Embodiment 5]
8A and 8B are a perspective view and a cross-sectional view showing the positional relationship between the mask, the substrate to be processed, and the weight, respectively, in the mask vapor deposition method and the mask vapor deposition apparatus according to Embodiment 5 of the present invention. is there. In FIG. 8B, the state where the mask or the like is curved is exaggerated.

  In the mask vapor deposition method and the mask vapor deposition apparatus of the present embodiment, as shown in FIGS. 8A and 8B, the mask 10 is disposed so as to overlap the film formation surface 210 (lower surface) side of the substrate 200 to be processed. Vacuum deposition is performed in the state. At that time, a weight 18 made of aluminum or the like is arranged in each of the regions 221 (regions indicated by bold lines in FIG. 8B) overlapping the chip 20 in the back surface 220 (upper surface) of the substrate 200 to be processed. Here, the chip 20 has a rectangular shape, and the weight 18 has a size obtained by dividing the chip 20 into two in the longitudinal direction. The weight 18 includes a rectangular flat plate portion 18p and four protrusions 18c protruding at four corners on the lower surface of the flat plate portion 18p.

  Therefore, in this embodiment, the weight 18 overlaps the chip 20 in the back surface 220 of the substrate to be processed 200 even when the center portion of the mask 10 is bent in a state of being depressed by its own weight and the chip 20 is bent or tilted. Since the region 221 is pressed downward, the substrate to be processed 200 is deformed following the inclination or bending of the chip 20. In particular, in this embodiment, two weights 18 are arranged per chip 20, and the protrusion 18c is formed on each lower surface. Therefore, the load point applied to the substrate 200 is indicated by an arrow G. Thus, the number is larger than that of the first embodiment. Moreover, the weight 18 presses the substrate 200 to be processed at many locations (four locations in this embodiment) in the long side direction of the chip 20 where a large amount of bending occurs. Accordingly, at least a portion of the substrate to be processed 200 that overlaps with the chip 20 is deformed following the inclination and bending of the chip 20 accurately. Therefore, no gap is generated between the substrate to be processed 200 and the chip 20, so that the film forming accuracy can be improved.

  Further, in this embodiment, one weight 18 presses the substrate 200 to be processed at a plurality of locations, but the pressed locations are separated from each other by 20 mm, and separated by 10 mm or more. For this reason, a large load is not applied locally to the substrate to be processed 200, and the load is applied to the entire portion of the substrate to be processed 200 that overlaps with the chip 20. Has the advantage that it deforms accurately following the inclination and bending of the chip 20.

  Furthermore, since the weight 18 presses only the portion overlapping the outer frame portion 25 of the chip 20, the opening 22 is not deformed. Therefore, according to this embodiment, the film forming accuracy can be further improved.

[Other embodiments]
The technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention. For example, in the above embodiment, the film formation surface 210 of the substrate 200 to be processed is disposed downward, but when the film formation surface 210 of the substrate 200 is disposed upward, The present invention may be applied to the case where the substrate to be processed 200 and the mask 10 are brought into close contact with each other when the deposition is performed in a standing manner.

  Moreover, although the said embodiment demonstrated the vacuum evaporation method as an example, you may apply this invention to a sputtering evaporation method.

It is principal part sectional drawing of the organic electroluminescent apparatus to which this invention is applied. It is a schematic perspective view of the mask to which this invention is applied. It is a schematic block diagram of the mask vapor deposition apparatus to which this invention is applied. (A), (b) is the perspective view and sectional drawing which respectively show the positional relationship of a mask, a to-be-processed substrate, and a weight in the mask vapor deposition method and mask vapor deposition apparatus which concern on Embodiment 1 of this invention. (A), (b) is the perspective view and sectional drawing which respectively show the positional relationship of a mask, a to-be-processed substrate, and a weight in the mask vapor deposition method and mask vapor deposition apparatus which concern on Embodiment 2 of this invention. (A), (b) is the perspective view and sectional drawing which respectively show the positional relationship of a mask, a to-be-processed substrate, and a weight in the mask vapor deposition method and mask vapor deposition apparatus which concern on Embodiment 3 of this invention. (A), (b) is the perspective view which shows the positional relationship of a mask, a to-be-processed substrate, and a weight in the mask vapor deposition method and mask vapor deposition apparatus which concern on Embodiment 4 of this invention, respectively, and its sectional drawing. (A), (b) is the perspective view and sectional drawing which respectively show the positional relationship of a mask, a to-be-processed substrate, and a weight in the mask vapor deposition method and mask vapor deposition apparatus which concern on Embodiment 5 of this invention.

Explanation of symbols

1 .... Organic EL device, 2 .... Element substrate, 3 .... Organic EL element, 7 .... Light emitting layer, 10 .... Mask, 18 .... Weight, 20 .... Chip, ...... Support substrate, ...... Mask vapor deposition apparatus, 110 ... Vapor deposition chamber, 120 ... Vapor source, 180 ... Pressing tool, 200 ... Process substrate, 210 ... Film surface of substrate, 220 ... Back surface of substrate, 221 .. Area overlapping the chip on the back surface of the substrate to be processed

Claims (10)

In a mask vapor deposition method in which a mask in which an opening corresponding to a pattern to be formed is deposited is deposited on the film formation surface side of the substrate to be processed,
The mask includes a plurality of chips in which the openings are formed, and a support substrate that holds the plurality of chips.
A mask vapor deposition method, wherein vapor deposition is performed in a state where at least a part of a region overlapping with the chip is pressed toward the mask on a back surface located on the opposite side of the deposition surface on the substrate to be processed. The substrate to be processed is disposed with the film formation surface facing downward,
2. The mask vapor deposition method according to claim 1, wherein vapor deposition is performed in a state in which at least a part of a region overlapping with the chip is pressed downward on the back surface of the substrate to be processed. The chip includes an outer frame portion around a region where the opening is formed,
The mask vapor deposition method according to claim 2, wherein a region of the back surface of the substrate to be processed that overlaps the outer frame portion of the chip is pressed. The chip has a rectangular planar shape,
The mask vapor deposition method according to claim 2, wherein the vapor deposition is performed in a state of being pressed along at least the long side of the chip among the back surface of the substrate to be processed.   5. The mask vapor deposition method according to claim 2, wherein vapor deposition is performed in a state where a plurality of positions in a region overlapping with the chip are pressed on a back surface of the substrate to be processed.   The mask vapor deposition method according to claim 5, wherein the plurality of pressed portions with respect to the substrate to be processed are separated from each other by 10 mm or more.   The substrate to be processed is pressed downward by disposing a weight having the same planar shape and size as the chip in a region overlapping the chip on the back surface of the substrate to be processed. Item 5. The mask vapor deposition method according to any one of Items 2 to 4.   3. The substrate to be processed is pressed downward by disposing a plurality of weights having a size smaller than that of the chip on a region of the back surface of the substrate to be overlapped with the chip. The mask vapor deposition method according to any one of 6.   By placing on the back side of the substrate to be processed a weight whose protrusion capable of pressing an area overlapping the chip on the back surface of the substrate to be processed protrudes from the flat plate portion, the substrate to be processed is pressed downward. The mask vapor deposition method according to any one of claims 2 to 6. In a mask vapor deposition apparatus for vapor deposition in a state where a mask in which an opening corresponding to a pattern to be formed is formed is overlapped on a film formation surface side of a substrate to be processed,
The mask includes a plurality of chips in which the openings are formed, and a support substrate that holds the plurality of chips.
A mask vapor deposition comprising a pressing tool that presses at least a part of a region overlapping with the chip on the back surface of the substrate to be processed opposite to the film formation surface on the substrate to be processed. apparatus.

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