JP2008096880A - Resist composition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resist composition capable of improving etching resistance, dissolution rate in a developer and sensitivity while having desired high sensitivity/high resolution, and environmental stability of a resist film. <P>SOLUTION: The resist composition uses a fullerene derivative having such properties that (1) it can easily be obtained at high yield and (2) it is soluble in a general-purpose resist solvent and developer, whereby since dissolution rate is greatly improved, a high resolution pattern is obtained and substrate defect formation such as faulty development can be prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a resist composition.

  In recent years, in semiconductor devices, integration of elements has progressed, and a fine pattern of 100 nm or less has been required. It is well known that a photolithography method is used to form the fine pattern. Furthermore, in order to achieve such miniaturization, the exposure wavelength has been shortened, and light sources such as ArF excimer leather, EUV (extreme ultraviolet light), electron beam, and X-ray are used. Further, various resist compositions have been proposed as photosensitive materials in the same manner as the shortening of the wavelength, and various resins, photosensitive agents, crosslinking agents, and the like have been synthesized and their photosensitivity has been evaluated. In order to achieve such miniaturization, the resist film is becoming thinner, and at present, patterning is generally performed with a film thickness of 150 nm or less. However, as the film thickness decreases, the etching resistance of the resist film must be improved as a trade-off. If this etching resistance is improved, the resist film can be further thinned, and the process margin is widened, which is advantageous for future miniaturization. From the above, in order to put the next-generation pattern formation process into practical use, it has been essential to improve the sensitivity and the dissolution rate with respect to the alkaline developer while maintaining the current performance, and to increase the etching resistance.

  As a solution to solve this problem, resist materials using fullerene have been proposed. In general, in order to achieve high etching resistance, it has long been known to calculate molecular parameters of compounds by calculating Onishi parameters and ring parameters. From these parameters, an organic compound having a cyclic structure that does not contain a hetero atom is advantageous, and the resin and the like constituting the resist often adopt these structures. Since fullerenes are cyclic molecules composed only of carbon, they can be expected to exhibit high etching resistance, and various fullerene derivatives have been proposed (see Patent Documents 1 to 4).

On the other hand, a synthesis method has been reported in which fullerene derivatives can be obtained in good yield under mild conditions using fullerene oxide as a starting material. In this method, a fullerene derivative can be obtained at a yield of almost 100% in a reaction at 75 ° C. for 1 hour by an acetalization reaction between an epoxidized fullerene, which is an oxide of fullerene, and an aldehyde or a ketone (non-patent document). 1).
JP-A-7-33751 JP 9-211182 A Japanese Patent Application Laid-Open No. 11-143074 JP 2005-266798 A Chem. Lett. Vol. 33, no. 12, 2004, 1604

  As described above, fullerene derivatives modified with various substituents have been synthesized and studied for application to resist materials.

  However, since fullerene is a stable compound itself, if it is to be modified by an organic adduct, fullerene must be activated under high temperature, high pressure environment or using a strong alkali as a catalyst. did not become. Furthermore, depending on the reaction, various isomers or derivatives with different numbers of additions are formed, and therefore, the addition reaction must be controlled or separated and purified after synthesis, resulting in a low yield. It was.

  Therefore, in view of practical application, the present invention uses a fullerene derivative that can be synthesized in a high yield by using a mild reaction, and has a desired high sensitivity, high resolution, and environmental stability of a resist film, and is suitable for an alkaline developer. It aims at providing the resist composition which can improve a dissolution rate.

  Based on the above findings, the present inventors have conducted extensive research to solve the problem, and as a result, found that even a fullerene derivative obtained using a fullerene oxide as a starting material can be suitably used as a resist composition. The present invention has been completed. That is, the present invention has the following configuration.

  The present invention according to claim 1 is a resist composition comprising a compound synthesized from fullerene oxide.

The present invention according to claim 2 is the resist composition according to claim 1, which comprises a compound having a structure represented by the following general formula.

The present invention according to claim 3 is the resist composition according to claim 1, which includes a compound having a structure represented by the following general formula.

  The present invention according to claim 4 is the resist composition according to any one of claims 1 to 3, comprising an alkali-soluble resin and a photosensitizer, wherein the photosensitizer is a diazonaphthoquinone derivative. The resist composition is characterized.

  The present invention according to claim 5 is the resist composition according to any one of claims 1 to 3, wherein the resist composition includes an alkali-soluble resin and a crosslinking agent.

  The present invention according to claim 6 is the resist composition according to any one of claims 1 to 3, wherein the resist composition includes an acrylic or acrylic-styrene resin.

  The present invention according to claim 7 is the resist composition according to any one of claims 1 to 3, wherein the resist composition includes a resin having a crosslinking mechanism.

The resist composition of the present invention includes a fullerene derivative synthesized from a fullerene oxide.
Fullerene oxides can introduce substituents soluble in general-purpose resist solvents and alkaline developers into fullerene skeletons by reacting with aldehydes or ketones that have substituents soluble in general-purpose resist solvents and alkaline developers. I can do it. For this reason, it is possible to introduce a substituent in a high yield using a mild reaction, and it is possible to improve the solubility in an alkali developer.
In particular, when epoxy fullerene is used as the fullerene oxide, the number of modifying groups can be controlled by the number of epoxy rings of the epoxy fullerene that is the starting material, so the choice of structure of the aldehyde or ketone to be used can be widened. I can do it.

As described above, the resist composition of the present invention comprises a fullerene derivative having the characteristics that (1) it can be easily obtained in high yield, and (2) it is soluble in general-purpose resist solvents and developers. It is characterized by using.
Thereby, since the dissolution rate is remarkably improved, a high-resolution pattern can be obtained, and the formation of substrate defects such as development defects can be prevented. In addition, the resist film formed from the resist composition of the present invention is excellent in dry etching resistance, heat resistance, and mechanical strength, and can be further reduced in thickness. It is extremely useful as a resist composition for manufacturing expected semiconductor devices and semiconductor device photomasks.

  Hereinafter, the compound used for the resist composition of the present invention will be described in detail.

<Fullerene derivative>
The resist composition of the present invention is characterized by containing a fullerene derivative having a structure represented by the general formulas shown in Chemical Formulas 1 and 2.
The fullerene derivative can be obtained in a simple synthesis and in a high yield by using an acetalization reaction with a ketone and an aldehyde using a fullerene oxide as a starting material. As a fullerene oxide used as a starting material, for example, a compound represented by the general formula of Chemical Formula 3 (C ₆₀ O, C ₆₀ O ₂ , C ₆₀ O ₃ having m up to 1 to ₃ and stereoisomers thereof) Is mentioned. As the fullerene derivative used in the resist composition of the present invention, one kind of fullerene oxide among the fullerene oxides may be used as a starting material, or may be used in combination.

  At this time, in the acetalization reaction, a pyridine salt can be used as a catalyst to be used.

  In addition, the ketones or aldehydes used in the reaction have an appropriate structure as appropriate in consideration of the solubility of the resist species described later in the resist solvent / developer, the film forming property and stability of the resist film, etching resistance, and the like. You can choose one.

<1> Hereinafter, fullerene derivatives used for resist types in the case of using an alkaline aqueous solution or a mixed solution of an alkaline aqueous solution and an alcohol solution as a developer will be described.

  At this time, it is desirable that the fullerene derivative exhibits good solubility in an alkaline aqueous solution. If a fullerene derivative that is insoluble in an alkaline aqueous solution is used, it is not preferable because an increase in particles or defective development occurs.

  The fullerene derivative desirably has a structure that can be satisfactorily dissolved in a resist solvent when an alkaline aqueous solution is used as a developer.

  Examples of the resist solvent include (1) glycol ether esters such as ethyl cellosolve acetate, methyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and (2) ethyl cellosolve, methyl cellosolve, propylene glycol monomethyl ether. Glycol mono- or diethers such as propylene glycol monoethyl ether, diethylene glycol dimethyl ether, (3) esters such as ethyl lactate, butyl acetate, amyl acetate, ethyl pyruvate, γ-butyrolactone, (4) 2-heptanone, Ketones such as cyclohexanone and methyl isobutyl ketone, aromatic hydrocarbons such as xylene, (5) 2-heptanone, cyclohex Non, ketones such as methyl isobutyl ketone, (6) aromatic hydrocarbons such as xylene, (7) lactams, such as N- methyl-2-pyrrolidone, and the like.

  As described above, the present invention proposes Chemical Formulas 1 and 2 as fullerene derivatives exhibiting good solubility in both the aqueous alkali solution and the resist solvent. That is, it has a structure having a certain amount of organic substituents and a terminal having an acidic functional group.

In Chemical Formula 1 and Chemical Formula 2, A is a single bond, and —S—, —SO—, —SO 2 —, —O—, —CO—, —C (R ¹ ) (R ² ) —, —R ³ — , Either. ^(Wherein, R 1, ^{R 2} and ^{R 3} are hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group, a phenyl group or a naphthyl group 2 to 11 carbon atoms. Also, ^{R 1} and ^{R 2} They may be the same or different from each other.) In addition to the single bond described above, hetero atoms or alkyl chains may be introduced, but this is not preferable because the etching resistance decreases when the introduction ratio increases.

In Chemical Formula 1 and Chemical Formula 2, R ⁴ is either an acidic functional group or a functional group having a crosslinking mechanism. At this time, a plurality of R ⁴ present in the compound may be the same or different from each other. Moreover, you may have both an acidic functional group or the functional group which has a crosslinking mechanism.

At this time, alkali solubility can be provided by providing an acidic functional group. Moreover, alkali solubility can be adjusted by adjusting the kind or the number of introduction of acidic functional groups. Therefore, even alkali-soluble due to the structure of A is left, by the structure of R ^4, it is possible to adjust the alkali solubility.

  Examples of the acidic functional group include a phenolic hydroxyl group, a hexafluorobutyl alcohol group, and a carboxylic acid group.

  Further, by providing a functional group having a crosslinking mechanism, it can be applied to a negative resist adopting a crosslinking mechanism.

  Examples of the functional group having the crosslinking mechanism include (1) hydroxymethylated, alkoxymethylated, acyloxymethylated phenol, (2) alkoxymethyletherified phenol group, (3) chloromethyl group, and (4) epoxy group. Etc.

  When using the fullerene derivative mentioned above as a resist composition, you may use individually or in mixture of 2 or more types.

<2> The fullerene derivative used for the resist type when an organic developer is used as the developer will be described below.

  At this time, the fullerene derivative needs to exhibit good solubility in an organic developer. If an unnecessary fullerene derivative is used for the organic developer, an increase in particles or poor development occurs, which is not preferable.

  Examples of the organic developer include methyl isobutyl ketone, isopropyl alcohol, or a mixed solution thereof.

  In addition, the fullerene derivative desirably has a structure that can be satisfactorily dissolved in a resist solvent when an organic developer is used as the developer.

  Examples of the resist solvent include 1,2-dichlorobenzene, 1,3-dichlorobenzene, 1,4-dichlorobenzene, anisole, methyl isobutyl ketone, and the like.

  As described above, the present invention proposes Chemical Formulas 1 and 2 as fullerene derivatives that exhibit good solubility in both the organic developer and the resist solvent.

In Chemical Formula 1 and Chemical Formula 2, A is a single bond, and —S—, —SO—, —SO 2 —, —O—, —CO—, —C (R ¹ ) (R ² ) —, —R ³ — , Either. (However, R ¹ , R ² and R ³ represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 2 to 11 carbon atoms, a phenyl group or a naphthyl group. It may be the same or different.) In addition to the single bond described above, hetero atoms or alkyl chains may be introduced. However, if the introduction ratio increases, the etching resistance decreases, which is not preferable.

In the chemical formulas 1 and 2, R ⁴ is a functional group having a crosslinking mechanism. At this time, a plurality of R ⁴ present in the compound may be the same as or different from each other.

  By providing a functional group having a crosslinking mechanism, it can be applied to a negative resist employing a crosslinking mechanism.

  Examples of the functional group having the crosslinking mechanism include (1) hydroxymethylated, alkoxymethylated, acyloxymethylated phenol, (2) alkoxymethyletherified phenol group, (3) chloromethyl group, and (4) epoxy group. Etc.

  When using the fullerene derivative mentioned above as a resist composition, you may use individually or in mixture of 2 or more types.

  Even in the case of <2>, the fullerene derivative used in the case of <1> may be used as the resist composition.

<Alkali-soluble resin>
The alkali-soluble resin used in the present invention can be used without any particular limitation from those used in resist compositions using known alkali developers. For example, a hydroxystyrene resin, a methacrylic acid resin, or a novolac resin can be used.

  The average molecular weight of the alkali-soluble resin is preferably 5000 to 25000. If it is smaller than this range, the pattern shape deteriorates and the remaining film ratio after development also decreases. Further, if it is larger than this range, the contrast is lowered, and the resolution is deteriorated.

<Photosensitive agent>
As the photosensitizer, a diazonaphthoquinone derivative can be used. The diazonaphthoquinone derivative can be used without any particular limitation from those used in known positive resist compositions. Examples thereof include compounds having a 1,2-naphthoquinonediazido 4-sulfonyl group.

<Crosslinking agent>
The crosslinking agent is not particularly limited as long as it can cure the alkali-soluble resin by crosslinking, and specific examples thereof include compounds having two or more hydroxymethyl groups, alkoxymethyl groups, acyloxymethyl groups, or alkoxymethyl ether groups. It is done. More preferred are alkoxymethylated, acyloxymethylated melamine compounds, alkoxymethylated, acyloxymethylated urea compounds, hydroxymethylated, alkoxymethylated, acyloxymethylated phenol compounds, and alkoxymethyl etherified phenol compounds.

<Acrylic or acrylic-styrene resin>
Acrylic or acrylic-styrene-based resins can be used without particular limitation from among resins used in known main-chain-breaking positive resist compositions. Specifically, homopolymers or copolymers of polymethyl methacrylate or methyl methacrylate, α-chloro methacrylate, α-chlorostyrene, α-methylstyrene, styrene, 2,2,2-trifluoroethyl-α-chloroacrylates. A polymer etc. can be used.

<Resin having a crosslinking mechanism>
The resin having a cross-linked structure is not limited as long as the resin can be cross-linked by exposure or radiation irradiation so that the resin can be made unnecessary. Specific examples include resins having a chloromethyl group, an epoxy group, hydroxymethyl, alkoxymethyl, and an acyloxymethylated phenol group. Further, these resins are not particularly limited as long as they are dissolved in a developer used for patterning.

<Preparation of resist composition>
The fullerene derivative contained in the resist composition of the present invention is usually preferably contained in the range of 5 to 20 parts by mass with respect to the resin component contained in the resist composition. If the amount is less than this range, the effect of adding the fullerene derivative does not appear. If the amount is more than this range, the depopulation of the resist film is lost and a good film cannot be obtained. If necessary, various additives such as quenchers, sensitizers, surfactants, stabilizers and dyes may be contained in small amounts.

  The resist composition of the present invention is usually applied on a silicon wafer or a quartz substrate for a mask by mixing each of the above components with a solvent so that the total solid concentration is 10 to 50% by weight. The solvent used here is not particularly limited as long as it dissolves each component and has an appropriate drying rate, and those commonly used in this field can be used.

  Examples of the solvent include (1) glycol ether esters such as ethyl cellosolve acetate, methyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and (2) ethyl cellosolve, methyl cellosolve, propylene glycol monomethyl. Glycol mono- or diethers such as ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, (3) esters such as ethyl lactate, butyl acetate, amyl acetate, ethyl pyruvate, γ-butyrolactone, (4) 2-heptanone Ketones such as cyclohexanone and methyl isobutyl ketone, (5) aromatic hydrocarbons such as xylene and anisole, and (6) N-methyl. Such as lactams, such as 2-pyrrolidone. These solvents can be used alone or in combination of two or more.

<Usage of resist composition>
The resist composition of the present invention can be used, for example, as follows. That is, a resist solution dissolved in a solvent as described above is applied onto a substrate by a method such as spin coating, dried (prebaked), subjected to an exposure process for patterning, and then heated to promote a chemical reaction. After the treatment, a resist pattern can be formed by developing with an alkali developer or an organic developer. The alkali developer or organic developer used here is one commonly used in this field. For example, 1 to 10% by weight aqueous solution of tetramethylammonium hydroxide or (2-hydroxyethyl) trimethylammonium hydroxide (in addition to these aqueous alkaline solutions, water-soluble organic solvents such as methanol and ethanol, certain surfactants) Etc.) or a mixture of methyl isobutyl ketone and isopropanol.

  Examples of the present invention will be described below. In addition, the following resist composition and its ratio show an example, Comprising: This invention is not limited to the following value, It can adjust with process conditions etc.

(Comparative Example 1)
A fine pattern was formed on a quartz mask substrate with a resist solution of a commercially available alkali-soluble resin, diazonaphthoquinone-containing positive photoresist THMR-iP3500 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) as follows.
First, as shown in FIG. 1A, a resist solution was spin-coated on the mask substrate 1 and baked to form a resist film 2 on the mask substrate 1 at 300 nm. And the electron beam 3 was irradiated using the electron beam drawing apparatus of acceleration voltage 50KV. Next, post-exposure baking was performed as shown in FIGS. 1B and 1C, and development was performed with a 2.38 wt% tetramethylammonium hydroxide aqueous solution at a development time of 90 seconds. The formed pattern 4a was confirmed with an electron microscope. Table 1 shows the patterning results.

(Comparative Example 2)
Using the substrate prepared in Comparative Example 1, the substrate was subjected to etching gas (mixing ratio (volume ratio) chlorine / helium / oxygen = 60/80/9), pressure 7 × 10 −3 Torr, RIE power using an inductively coupled plasma etching apparatus. Etching was performed under the conditions of 6 W, ICP power 250 W, and etching time 180 seconds. Then, the etching rate per hour of the resist film was calculated. The etching rate results are shown in Table 2.

(Example 1)
The resist composition of Example 1 was prepared by adding 5 parts by mass of the fullerene derivative shown in Chemical formula 4 to a resist solution containing 100 parts by mass of the solid content of the photoresist THMR-iP3500. And pattern formation was performed similarly to the comparative example 1, and it confirmed with the electron microscope. Table 1 shows the patterning results.

(Example 2)
Etching was performed under the conditions of Comparative Example 2 using the substrate prepared in Example 1. Then, the etching rate per hour of the resist film was calculated. The etching rate results are shown in Table 2.

(Evaluation 1)
Table 1 shows the patterning results. In the system to which the fullerene derivative of Example 1 was added, development residue and pattern deterioration due to the fullerene derivative were not confirmed, and patterning performance equivalent to that of the resist composition of Comparative Example 1 was obtained.

  The etching rate results obtained in Comparative Example 2 and Example 2 are shown in Table 2. The etching rates when the fullerene derivative was not added and when the fullerene derivative was added were 17.8 nm / sec and 13.1 nm / sec, respectively, and the etching resistance was improved about 1.35 times.

(Comparative Example 3)
A resist solution having a film thickness of 350 nm is formed on a mask substrate in the same manner as in Comparative Example 1 using a commercially available acrylic-styrene resin-containing, main-chain-breaking positive electron beam resist ZEP-520A (manufactured by Zeon Corporation). did. Then, an electron beam was irradiated using an electron beam drawing apparatus having an acceleration voltage of 50 KV. Subsequently, post-exposure baking was performed, development was performed with a ZED-N50 developer (manufactured by Zeon Corporation) for a development time of 120 seconds, and the formed pattern was confirmed with an electron microscope. Table 3 shows the patterning results.

(Comparative Example 4)
Using the substrate prepared in Comparative Example 3, the substrate was subjected to etching gas (mixing ratio (volume ratio) chlorine / helium / oxygen = 60/80/9), pressure 7 × 10 −3 Torr, RIE power using an inductively coupled plasma etching apparatus. Etching was performed under the conditions of 6 W, ICP power 250 W, and etching time 180 seconds. Then, the etching rate per hour of the resist film was calculated. The etching rate results are shown in Table 4.

(Example 3)
The fullerene derivative shown in Chemical formula 5 was adjusted to 5 parts by mass in the resist solution containing 100 parts by mass of the solid content of the main chain cutting type positive electron beam resist ZEP-520 of Comparative Example 3 described above. And pattern formation was performed similarly to the comparative example 3, and the pattern was confirmed with the electron microscope. Table 3 shows the patterning results.

Example 4
Using the substrate prepared in Example 3, the substrate was etched under the conditions of Comparative Example 4. Then, the etching rate per hour of the resist film was calculated. The etching rate results are shown in Table 4.

(Evaluation 2)
Table 3 shows the patterning results. In the system to which the fullerene derivative of Example 3 was added, the development residue and pattern deterioration due to the fullerene derivative were not confirmed, and patterning performance equivalent to that of the resist composition of Comparative Example 3 was obtained.

  Table 4 shows the etching rate results obtained in Comparative Example 4 and Example 4. The etching rates when the fullerene derivative was not added and when the fullerene derivative was added were 24.0 nm / sec and 16.9 nm / sec, respectively, and the etching resistance was improved about 1.42 times.

(Comparative Example 5)
A methyl isobutyl ketone solution containing 20 parts by mass of PMMA (number average molecular weight: 450,000) was used as a resist solution, and a resist film having a thickness of 400 nm was formed on the mask substrate in the same manner as in Comparative Example 1. Then, an electron beam was irradiated using an electron beam drawing apparatus having an acceleration voltage of 50 KV. Subsequently, post-exposure baking was performed, development was performed using a mixed solution of methyl isobutyl ketone and isopropyl alcohol (volume ratio 1: 1) as a developing solution for a developing time of 120 seconds, and the formed pattern was confirmed with an electron microscope. Table 5 shows the patterning results.

(Comparative Example 6)
Using the substrate prepared in Comparative Example 5, the substrate was subjected to etching gas (mixing ratio (volume ratio) chlorine / helium / oxygen = 60/80/9), pressure 7 × 10 −3 Torr, RIE power using an inductively coupled plasma etching apparatus. Etching was performed under the conditions of 6 W, ICP power 250 W, and etching time 180 seconds. Then, the etching rate per hour of the resist film was calculated. The etching rate results are shown in Table 6.

(Example 5)
The fullerene derivative shown in Chemical formula 5 was adjusted to 5 parts by mass with respect to 100 parts by mass of the solid content of the PMMA resist solution used in Comparative Example 5. And pattern formation was performed similarly to the comparative example 5, and the pattern was confirmed with the electron microscope. Table 5 shows the patterning results.

(Example 6)
Using the substrate prepared in Example 5, the substrate was etched under the conditions of Comparative Example 6. Then, the etching rate per hour of the resist film was calculated. The etching rate results are shown in Table 6.

(Evaluation 3)
Table 5 shows the patterning results. In the system to which the fullerene derivative of Example 5 was added, the development residue and pattern deterioration due to the fullerene derivative were not confirmed, and patterning performance equivalent to that of the resist composition of Comparative Example 5 was obtained.

  The etching rate results obtained in Comparative Example 6 and Example 6 are shown in Table 6. The etching rates when the fullerene derivative was not added and when the fullerene derivative was added were 24.6 nm / sec and 17.8 nm / sec, respectively, and the etching resistance was improved about 1.38 times.

  The resist composition of the present invention can be suitably used as a resist composition used for the production of an ultra-highly integrated semiconductor device and the production of a photomask used for the production.

It is a figure explaining an example of the fine pattern formation process using the resist composition of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Mask substrate 2 ... Resist film 3 ... Electron beam 4a ... Line & space pattern 5 ... Etching process

Claims (7)

  A resist composition comprising a compound synthesized from fullerene oxide. The resist composition according to claim 1,
A resist composition comprising a compound having a structure represented by the following general formula.
The resist composition according to claim 1,
A resist composition comprising a compound having a structure represented by the following general formula.
A resist composition according to any one of claims 1 to 3,
Including an alkali-soluble resin and a photosensitizer;
A resist composition, wherein the photosensitive agent is a diazonaphthoquinone derivative. A resist composition according to any one of claims 1 to 3,
A resist composition comprising an alkali-soluble resin and a crosslinking agent. A resist composition according to any one of claims 1 to 3,
A resist composition comprising an acrylic or acrylic-styrene resin. A resist composition according to any one of claims 1 to 3,
A resist composition comprising a resin having a crosslinking mechanism.