JP2008088009A5 - - Google Patents

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JP2008088009A5
JP2008088009A5 JP2006269329A JP2006269329A JP2008088009A5 JP 2008088009 A5 JP2008088009 A5 JP 2008088009A5 JP 2006269329 A JP2006269329 A JP 2006269329A JP 2006269329 A JP2006269329 A JP 2006269329A JP 2008088009 A5 JP2008088009 A5 JP 2008088009A5
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seed crystal
autoclave
crystal
support
support frame
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JP2006269329A
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JP2008088009A (en
JP5033386B2 (en
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特許文献1の技術を説明する前に従来の種子水晶の配置法ついて簡単に説明すると、板状(または棒状)の種子水晶1aは、図1に示すようにオートクレーブ2内に設置された多段構成の支持具23に多数懸垂されており、この図に向かって正面と裏面とに人工水晶が育成されるようになっている。図6は、種子水晶1aの懸垂された上記支持具23の一部を拡大して図1のX方向から見た様子を示したものである。各種子水晶1aは、支持具23を構成する支持棒23b間に多数横架された支持枠23aに対して針金等の留め金23cによりその上下を固定され、人工水晶の育成される面(以下、基本成長面という)と重力方向(図中の 方向)とが平行になるように支持具23に配置されている。
Prior to the description of the technique of Patent Document 1, a conventional seed crystal arrangement method will be briefly described. A plate-shaped (or rod-shaped) seed crystal 1a has a multi-stage configuration installed in an autoclave 2 as shown in FIG. The artificial crystal is grown on the front surface and the back surface toward this figure. Figure 6 is a an enlarged part of the suspension has been the support 23 of the seed crystal 1a shows the state as viewed from the X 1 direction in FIG. Each seed crystal 1a is fixed on the upper and lower sides of a support frame 23a horizontally mounted between support rods 23b constituting the support 23 by clasps 23c such as a wire, and a surface on which an artificial crystal is grown (hereinafter referred to as a crystal). , a base that growth surface) and the gravitational direction (Y 1 direction in the drawing) is disposed on the support member 23 so as to be parallel.

初めに、本実施の形態にて使用するオートクレーブ2の構成について図1を用いて説明する。図1は、水熱合成法により人工水晶を育成するためのオートクレーブ2の概要を示す縦断面図である。オートクレーブ2は、特殊鋼製の円筒容器であるオートクレーブ本体21と、このオートクレーブ本体21を密閉するための金属蓋25と、オートクレーブ本体21内を加熱するためのヒーター24とから構成されている。なお、図中に示した直交軸(X、Y、Z)は、オートクレーブ2の設置されている方向を示している。オートクレーブ2は、円筒形状をなすオートクレーブ本体21の中心軸が設置面に対して垂直( 軸方向)となるように設置されている。
First, the configuration of the autoclave 2 used in the present embodiment will be described with reference to FIG. FIG. 1 is a longitudinal sectional view showing an outline of an autoclave 2 for growing an artificial crystal by a hydrothermal synthesis method. The autoclave 2 includes an autoclave main body 21 that is a special steel cylindrical container, a metal lid 25 for sealing the autoclave main body 21, and a heater 24 for heating the inside of the autoclave main body 21. Incidentally, the orthogonal axes shown in FIG. (X 1, Y 1, Z 1) indicates the direction which is installed in the autoclave 2. Autoclave 2, the central axis of the autoclave body 21 is disposed so as to be perpendicular (Y 1 axial direction) with respect to the installation surface having a cylindrical shape.

次に、種子水晶1aについて説明する。図2の斜視図に示すように、例えば種子水晶1aは水晶原石を結晶軸(X、Y、Z軸)に沿って切り出され、X軸方向を幅方向、Y軸方向を長手方向、Z軸方向を厚さ方向とする平板材(または角棒材)として構成されている。人工水晶の育成速度は軸方向によって異なり、X軸方向、Y軸方向、Z軸方向においてはZ軸方向において最大となるので、本実施の形態においてはZ軸と直交する表裏2つのX−Y平面(基本成長面)に人工水晶が比較的速く育成されていく。なお、図1に示したオートクレーブ2の設置方向と区別するため、種子水晶1aのX、Y、Zの結晶軸方向はそれぞれX、Y、Zと記してあり、以下この表記に基づいて説明を行う。
Next, the seed crystal 1a will be described. As shown in the perspective view of FIG. 2, for example, the seed crystal 1a is obtained by cutting a quartz crystal along the crystal axes (X, Y, Z axes), the X axis direction is the width direction, the Y axis direction is the longitudinal direction, and the Z axis It is comprised as a flat plate material (or square bar material) which makes a direction the thickness direction. The growth speed of the artificial quartz crystal varies depending on the axial direction, and in the X-axis direction, the Y-axis direction, and the Z-axis direction, the maximum speed is obtained in the Z-axis direction. Artificial quartz is grown relatively quickly on a flat surface (basic growth surface). In addition, in order to distinguish from the installation direction of the autoclave 2 shown in FIG. 1, the X, Y, and Z crystal axis directions of the seed crystal 1a are written as X 2 , Y 2 , and Z 2 , respectively. To explain.

図3(a)は1段分の支持具23に種子水晶1aを配置した状態を 方向から拡大して見た図であり、図3(b)は、その配置状態を同じくX方向から見た図である。図3(a)に示すように、支持具23各段の枠体を構成する支持棒23bには多数の支持枠23aを横架してある。一方で各種子水晶1aのX−Y平面(基本成長面)の上下辺には複数の貫通孔1bを穿設してあり、例えば針金等の留め金23cを貫通孔1bに通してから支持枠23aに巻きつけることにより、種子水晶1aを当該支持具23上方の支持枠23aに懸垂することができるようになっている。
3 (a) is a view on an enlarged scale a state of arranging the seed crystal 1a to support 23 for one stage from Z 1 direction, FIG. 3 (b), also X 1 direction and the arrangement It is the figure seen from. As shown in FIG. 3A, a large number of support frames 23a are horizontally mounted on the support rods 23b constituting the frame of each stage of the support tool 23. On the other hand, a plurality of through-holes 1b are formed in the upper and lower sides of the XY plane (basic growth surface) of the various quartz crystals 1a. For example, a clasp 23c such as a wire is passed through the through-hole 1b and then the support frame. The seed crystal 1a can be suspended from the support frame 23a above the support 23 by being wound around 23a.

また、種子水晶1aの下辺も上辺と同様に留め金23cにより当該支持具23下方側の支持枠23aに固定される。本実施の形態において種子水晶1aは、図3(b)に示すように種子水晶1aの懸垂されている支持枠23aの鉛直下方よりずれた位置にある支持枠23aに留め金23cを巻きつけ、種子水晶1aの基本成長面を重力方向( 方向)に対して傾けた状態で固定されている。重力方向に対する基本成長面の傾きθは、例えば下方側の留め金23cを巻きつける支持枠23aの位置や、留め金23cの長さ等を変えることによって調整することができる。
Also, the lower side of the seed crystal 1a is fixed to the support frame 23a on the lower side of the support 23 by a clasp 23c in the same manner as the upper side. In the present embodiment, as shown in FIG. 3B, the seed crystal 1a wraps the clasp 23c around the support frame 23a at a position shifted from the vertically lower side of the support frame 23a on which the seed crystal 1a is suspended. the basic growth surface of the seed crystal 1a is fixed in an inclined state with respect to the direction of gravity (Y 1 direction). The inclination θ of the basic growth surface with respect to the direction of gravity can be adjusted by changing the position of the support frame 23a around which the lower clasp 23c is wound, the length of the clasp 23c, and the like.

JP2006269329A 2006-09-29 2006-09-29 Method for producing artificial quartz and artificial quartz Active JP5033386B2 (en)

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JP2008088009A5 true JP2008088009A5 (en) 2009-10-15
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DE102013205151A1 (en) * 2013-03-22 2014-09-25 Qsil Gmbh Quarzschmelze Ilmenau Apparatus and method for the hydrothermal production of quartz crystals
JP6506910B2 (en) * 2014-03-03 2019-04-24 京セラ株式会社 Method of manufacturing artificial crystal
JP6290018B2 (en) * 2014-07-01 2018-03-07 京セラ株式会社 Artificial quartz crystal growth jig and method

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JPS5749520B2 (en) * 1974-02-04 1982-10-22
JPH09227294A (en) * 1996-02-26 1997-09-02 Toyo Commun Equip Co Ltd Production of artificial quartz crystal
JP2001010897A (en) * 1999-06-28 2001-01-16 Meidensha Corp Production of artificial rock crystal
JP2004175590A (en) * 2002-11-25 2004-06-24 Kinseki Ltd Method of growing artificial quartz crystal and artificial quartz crystal
JP4457995B2 (en) * 2005-07-29 2010-04-28 セイコーエプソン株式会社 Artificial quartz crystal manufacturing apparatus, artificial quartz crystal manufacturing method, and filter member

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