JP2008084937A - Socket with heat radiating function - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a socket with heating radiating function assuring excellent heat radiating efficiency. <P>SOLUTION: A second elastic contact group 54A provided to a heat radiating contact member 50 is placed in contact with an electrode group 2A for grounding of a semiconductor element 1. Heat generated by the semiconductor element 1 is transferred to a heat sink 60 through the electrode group 2A for the grounding, the second elastic contact group 54A and moreover a contact member 55 and a heat transfer member 51 constituting a heat radiating contact member 50. Heat can be released from the lower surface side of the semiconductor element 1 hat has been not used as a route for releasing heat in the related art. Accordingly, heat radiating efficiency of a socket 10 can be improved. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a socket with a heat dissipation function that increases the heat dissipation efficiency of a semiconductor element.

  Recent semiconductor electrical / electronic components tend to be more integrated, smaller, and thinner with multifunction and higher performance. Along with this, the heat generated in semiconductor elements such as CPU (Central Processing Unit), MPU (Micro Processing Unit), GPU (Graphics Processing Unit), etc. is accumulated inside them and becomes a high temperature level. In addition, the reliability decreases due to malfunction.

  Therefore, conventionally, a heat sink is attached to the semiconductor element itself or to a socket for holding the semiconductor element, thereby cooling the semiconductor element by releasing the heat generated by the semiconductor element into the atmosphere.

Patent Documents listed below exist for performing heat dissipation with the semiconductor element mounted in a socket.
JP 2004-14873 A

  The thing of patent document 1 is the structure which escapes the heat | fever which generate | occur | produced inside the semiconductor element using the heat sink from the surface and side surface of the said semiconductor element.

  However, in the configuration in which heat is simply released from the surface and side surfaces of the semiconductor element, there is a limit to increasing the cooling capacity (heat radiation efficiency), and further improvement of the cooling capacity is desired. That is, it is preferable to effectively use the lower surface (connection surface) of the semiconductor element provided with solder balls or the like as a route for releasing heat.

  On the other hand, as a means for cooling the semiconductor element, for example, a method of forcibly cooling by blowing air from a fan to a semiconductor element or a heat sink is common.

  The semiconductor element is subjected to a thermal cycle test using a burn-in apparatus. In such a burn-in apparatus, since it is necessary to test a plurality of semiconductor elements at a time, a plurality of burn-in sockets are arranged in the apparatus. In the thermal cycle test (burn-in test), it is necessary to accurately control the temperature in the apparatus. For this reason, in order to accurately control the temperature of each semiconductor element, it is preferable to attach a fan to every burn-in socket.

  However, if a fan is attached to every burn-in socket, the burn-in device becomes mechanically large and complicated, and increases manufacturing costs and power consumption, which is not realistic. Moreover, since the burn-in apparatus is in a heating furnace state of about 150 ° C. at a high temperature, there is a problem that providing a fan in such an apparatus tends to cause a failure.

  The present invention has been made to solve the above-described conventional problems, and an object of the present invention is to provide a socket with a heat dissipation function that increases the heat dissipation efficiency of a semiconductor element.

The present invention has a heat dissipation function having a frame body fixed so as to surround the through hole on one surface of the mother substrate in which the through hole is formed, and a heat sink provided on the other surface of the mother substrate. A socket,
The heat sink is provided with a heat radiating member at a position corresponding to the through hole. When the heat sink is fixed to the other surface of the mother board, the heat radiating member is surrounded by the frame body through the through hole. Installed in the loading area,
When the semiconductor element is loaded in the loading area, an external contact provided on the connection surface of the semiconductor element can contact the heat radiating member.

  In the present invention, when the semiconductor element is loaded in the loading area in the socket, a predetermined external contact (such as a solder ball) provided on the connection surface of the semiconductor element can be brought into contact with the heat radiating member. For this reason, the heat generated inside the semiconductor element can be released from the lower surface (connection surface) side of the semiconductor element.

  For example, the heat dissipating member includes a heat transfer member and a plurality of elastic contacts provided on one surface of the heat transfer member, and the other surface of the heat transfer member is bonded to the bonding surface of the heat sink. Configured as being.

  In the above means, the heat generated inside the semiconductor element can be guided to the heat transfer member via the individual elastic contacts that are in contact with the external contacts of the semiconductor element.

  In addition, a relay member provided with an elastic contact connected to the mother board is provided in a portion excluding the through hole in the frame body, and the elastic contact provided in the relay member and the heat dissipating member are provided in the heat dissipation member. It is preferred that the elastic contacts are arranged together in the loading area.

  In the above means, the electrode group for signal is handled by the elastic contact provided on the relay member, and the elastic contact provided on the heat dissipating member is in charge of the electrode group for grounding, whereby the electrode group for grounding is provided. It is possible to release heat from.

  Alternatively, the heat dissipating member includes a sheet having a plurality of elastic contacts on the front surface, and a heat transfer member having one surface fixed to one region of the back surface of the connection sheet, and the other heat transfer member. The surface is configured to be bonded to the bonding surface of the heat sink.

  In the above means, the signal electrode group and the ground electrode group can be formed on one sheet without separating them, so that the configuration can be simplified and the manufacturing cost can be reduced. . In addition, the individual elastic contacts can be prevented from falling apart, and the handling and management of the elastic contacts can be facilitated.

  In the above, it is preferable that the heat transfer member and the plurality of elastic contacts are fixed with an anisotropic conductive adhesive.

  In the above means, the thermal conductivity between the heat transfer member and the plurality of elastic contacts can be increased. The heat transfer member can be set to the same ground potential as the elastic contact.

  Moreover, in the above, it is preferable that the said heat transfer member is formed with either copper, a copper alloy, aluminum, or an aluminum alloy.

  In the above means, the heat transfer member has a high electrical conductivity and thermal conductivity, so that the heat generated by the semiconductor element can be efficiently transferred to the heat sink.

Further, it is preferable that the frame body is provided with a holding member for holding the semiconductor element loaded in the loading region.
With the above means, the semiconductor element can be easily held in the socket.

  In the present invention, heat can be released from the lower surface (connection surface) side of the semiconductor element that has not been used as a route for releasing heat conventionally, and a socket with high heat dissipation efficiency can be provided.

  FIG. 1 is a sectional view showing a state before a semiconductor element is loaded in a socket as a first embodiment of the present invention, and FIG. 2 shows a state after the semiconductor element is loaded in a socket as an embodiment of the present invention. 1 is a perspective view showing a heat dissipation contact member (heat dissipation member), and FIG. 4 is a cross-sectional view showing an example of an elastic contact.

  The socket 10 shown in FIGS. 1 and 2 is used, for example, when a semiconductor device after manufacture is subjected to a thermal cycle test. However, a socket 10 for fixing a semiconductor element, such as a CPU (Central Processing Unit), an MPU (Micro Processing Unit), or a GPU (Graphics Processing Unit), which tends to have a high operating temperature at room temperature to a motherboard such as a computer. It may be used as

  A semiconductor element 1 shown in the following description has a plurality of external contacts 2 on a bottom surface (connection surface) 1B. The external contact 2 is typically a solder ball contained in a spherical contact, but may include other contacts such as a planar contact, a convex contact, or a pin contact. The external contacts 2 are arranged in a matrix on the bottom surface (connection surface) 1B of the semiconductor element 1. The pitch dimension in the vertical and horizontal directions of the matrix is constant, and the constant pitch dimension is hereinafter referred to as a common pitch.

  In this semiconductor element 1, a plurality of electrodes provided in one region smaller than the number of external contacts 2 arranged in a matrix form are used as the electrode group 2 </ b> A for grounding. For example, 25 external contacts 2 provided in a 5 × 5 region located at the center of the bottom surface (connection surface) 1B are used as the grounding electrode group 2A, and a plurality of others These electrodes are used as a signal electrode group 2B except for some electrodes. The part of the electrodes is used as, for example, a ± terminal electrode for power supply, or as an electrode for grounding similarly to the electrode arranged in the one region.

  As shown in FIGS. 1 and 2, the socket 10 has a frame body 11 composed of four side walls surrounding the front, rear, left and right except for the thickness (Z1-Z2) direction. In addition, this socket 10 is a structure which does not have a top | upper surface and a bottom face in the illustration Z1 side and Z2 side, respectively.

  A mother board 20 is provided below the socket 10 (Z2 side), and the bottom of the frame 11 constituting the socket 10 is fixed at a predetermined position on the mother board 20. A region surrounded by the inner surface of the frame 11 and the mother substrate 20 is a loading region 10A in which the semiconductor element 1 is loaded. When the semiconductor element 1 is mounted in the loading area 10 </ b> A, the side surface of the semiconductor element 1 is positioned by the inner surface of the frame body 11.

  The frame body 11 is provided with a pair of holding members 12 and 12 that rotate about rotation support portions 12b and 12b. At one end of the holding members 12, 12, the pressing portions 12a, 12a for pressing the surface of the semiconductor element 1 are provided. The pair of holding members 12 and 12 are urged in the α1 and α2 directions by an urging member (not shown).

  As shown in FIG. 1, the holding members 12 and 12 are rotated in the α1 and α2 directions, respectively, and the pressing portions 12a and 12a are released from the loading region 10A. In this open state, the semiconductor element 1 can be loaded into the loading area 10A. As shown in FIG. 2, when the holding members 12 and 12 are rotated in the directions α1 'and α2', respectively, and the pressing portions 12a and 12a are located in the loading area 10A, the closed state is established. During the open state, the semiconductor element 1 is mounted in the loading region 10A, and the pair of holding members 12 and 12 rotate in the α1 direction and the α2 direction to reach the closed state. The upper surface 1A is pressed by the pressing portions 12a and 12a, and the semiconductor element 1 is held in the loading region 10A. Normally, a heat radiating member such as a heat sink is attached to the upper surface 1A of the semiconductor element 1 held in the socket 10.

  A plurality of connection electrodes 21, 21,... Are arranged on the mother substrate 20. A plurality of signal lines extending from an external circuit (not shown) are formed on the mother substrate 20 and are individually connected to the connection electrodes 21.

  A through hole 20B penetrating in the plate thickness direction (Z direction) is formed at a position facing the grounding electrode group 2A in the center of the mother substrate 20. Most of the plurality of connection electrodes 21 are for signals, and are arranged in a matrix state at the common pitch in a portion excluding the through holes 20B.

  A relay member 30 formed in a plate shape or a sheet shape is provided on the mother substrate 20. A through hole 30A penetrating in the plate thickness direction (Z direction) is also formed at a position of the relay member 30 facing the grounding electrode group 2A, and the periphery thereof is arranged in a matrix state at the common pitch. A plurality of relay electrodes 31 arranged are provided. The relay electrode 31 corresponds to the signal electrode group 2B excluding the ground electrode group 2A provided in the center among the plurality of external contacts 2 provided on the bottom surface (connection surface) 1B of the semiconductor element 1. is doing.

  In the present embodiment, the relay electrode 31 is formed to have an elastic contact (first elastic contact) 32 that is branched in a substantially Y shape at one end on the Z1 side in the drawing. The other end on the Z2 side of the relay electrode 31 is individually conductively connected to any one of the connection electrodes 21 on the mother board 20.

  The relay electrode 31 is formed in a spiral shape from the winding end provided on the outer peripheral portion toward the winding start end in the center direction, and the winding termination portion which is a spiral tip is the winding. Convex (mountain shape) spiral contact that is three-dimensionally projecting from the start end, a membrane contact with an elastic film made of rubber or elastomer attached to the back of the dome-shaped metal film, and the tip of the contact Such as a spring pin (contact pin), a stressed metal, a contact probe (see Japanese Patent Application Laid-Open No. 2002-357622), or a bamboo shoot spring that can be elastically deformed as a whole while being bent into a substantially U shape. It may be formed of an elastic contact.

  As shown in FIG. 2, the plurality of first elastic contacts 32 branched in a substantially Y shape come into contact with the external contacts 2 made of the solder balls, respectively. The relay electrode 31 is individually conductively connected.

  The plurality of relay electrodes 31 provided corresponding to the signal electrode group 2B have a substantially “mouth” shape when seen in a plan view, thereby forming a first elastic contact group 32A for signals. ing.

  As shown in FIGS. 1 and 2, a heat radiation contact member (heat radiation member) 50 is provided in a lower position of the grounding electrode group 2A of the semiconductor element 1 in the through hole 20B.

  As shown in FIG. 3, the heat dissipation contact member 50 includes a heat transfer member 51 made of a metal plate and a connection sheet 52 provided on the surface side of the heat transfer member 51. The heat transfer member 51 is made of a material having high electrical conductivity and thermal conductivity, for example, copper, copper alloy, aluminum, or aluminum alloy. Screw holes are provided at the four corners of the heat transfer member 51 (not shown).

  As shown in FIG. 3, the connection sheet 52 is formed of an insulating sheet made of polyimide or the like, and a plurality of holes (through holes) 53 are formed in the connection sheet 52 in a matrix at the common pitch. It is installed. Each hole 53 is provided with a second elastic contact 54. The plurality of second elastic contacts 54 form a second elastic contact group 54A for grounding, and these are provided in a region facing the electrode group 2A for grounding.

  As shown in FIG. 4, in the present embodiment, the second elastic contact 54 is formed of a convex spiral contact 54a having an elastic portion 54d extending in a spiral shape from the base end portion 54b to the tip end portion 54c. Yes. In the spiral contactor 54a, the upper surface (the surface on the Z1 side) of the base end portion 54b is fixed to the lower surface side of the connection sheet 52 and to the edge of the hole 53. The lower surface (Z2 side surface) of the base end portion 54b of the spiral contact 54a is joined to the surface of the heat transfer member 51 through a predetermined adhesive member 55. The adhesive member 55 is made of an anisotropic conductive paste (ACP) or an anisotropic conductive film (ACF) that conducts electricity only in a certain direction (in this case, the thickness (Z) direction). It is an adhesive. As a result, all of the second elastic contacts 54 (spiral contacts 54a) forming the second elastic contact group 54A are set to the same ground potential.

  If the adhesive member 55 is formed of an anisotropic conductive paste (ACP) or an anisotropic conductive film (ACF), heat can be easily guided in the thickness direction through which electricity is passed. That is, the heat generated inside the semiconductor element 1 can be efficiently transferred to the heat transfer member 51 via the second elastic contact group 54A and the adhesive member 55.

  If the base end portions of adjacent spiral contacts 54a are connected to each other by a conductive layer or a conductive pattern formed on the connection sheet 52, the adhesive member 55 is non-conductive. An adhesive paste (NCP) or a non-conductive film (NCF) may be used, but in this case, the adhesive member 55 having a high thermal conductivity is preferable.

  As shown in FIGS. 1 and 2, a heat sink 60 provided with a plurality of heat radiating fins is fixed to the heat radiating contact member 50. The heat sink 60 is formed of a metal having a high thermal conductivity, such as copper, copper alloy, aluminum, or aluminum alloy. On the joint surface 61 on the Z1 side of the heat sink 60 and at a position facing the ground electrode group 2A, a convex joint portion 62 protruding in the Z1 direction is formed. The heat sink 60 is fixed to the heat-dissipating contact member 50 by the convex joint 62 being closely bonded to the lower surface 51B of the heat transfer member 51. The heat radiation contact member 50 and the heat sink 60 are fixed to, for example, four screw holes 50 a (see FIG. 3) formed in the heat radiation contact member 50 and corresponding to the convex joint 62. It is possible by screwing predetermined screws between four screw holes (not shown) formed at positions (see FIG. 2).

  The heat dissipation contact member 50 including the heat sink 60 is fixed to the back side of the mother substrate 20. At the time of fixing, the heat dissipation contact member 50 and the convex joint portion 62 are inserted into the through hole 20B of the mother substrate 20. At this time, the heat dissipation contact member 50 is exposed to the surface side of the mother substrate 20 through the through hole 20B. Thereby, in the socket 10, the second elastic contact group 54A formed on the heat dissipation contact member 50 is provided at the center of the loading area 10A, and the first elastic contact group 32A is provided around the second elastic contact group.

  As shown in FIG. 2, when the semiconductor element 1 is loaded in the loading region 10A, the individual external contacts 2 forming the plurality of signal electrode groups 2B provided on the outer peripheral side become the first elastic contacts. The first elastic contacts 32 of the relay electrodes 31 forming the group 32A are individually contacted. At the same time, the individual external contacts 2 that form a plurality of grounding electrode groups 2A provided in the center become second elastic contacts (spiral contacts 54a) 54 that form the second elastic contact groups 54A. Contact individually. Then, the signal electrode group 2B provided on the semiconductor element 1 and an external circuit (not shown) provided outside the socket 10 are connected to the first elastic contact group 32A and the mother substrate 20 by wiring. It can be connected through a pattern.

  Further, the external contacts 2 forming the grounding electrode group 2A provided in the semiconductor element 1 are electrically connected to each other through the second elastic contact group 54A of the heat dissipation contact member 50 and the heat transfer member 51. Can do.

  At the same time, a heat conduction path using the heat dissipation contact member 50 can be formed between each grounding electrode group 2 </ b> A provided in the semiconductor element 1 and the heat sink 60. Therefore, the heat generated inside the semiconductor element 1 can be released to the outside using the heat dissipation contact member 50 and the heat sink 60. In particular, since the ground electrode group 2A is connected to an external power source and is likely to become a heat source, the heat generated in the semiconductor element 1 can be efficiently released.

  FIG. 5 is a sectional view showing a state before a semiconductor element is loaded in a socket as a second embodiment of the present invention, and FIG. 6 shows a state after the semiconductor element is loaded in a socket as an embodiment of the present invention. It is sectional drawing similar to FIG. FIG. 7 is a perspective view schematically showing the connection sheet. The same members as those in the first embodiment are described with the same reference numerals.

  The configuration of the semiconductor element 1 and the configuration of the socket 10 shown in FIGS. 5 and 6 are the same as those shown in the first embodiment. However, what is disposed inside the loading region 10A is the heat dissipation contact member 50 in the first embodiment, whereas in the second embodiment, the connection sheet (relay member) 70 shown in FIG. There are some major differences.

  As shown in FIG. 7, the connection sheet 70 includes one sheet 71 made of polyimide or the like, and a heat conducting member 51 that is partially fixed to the lower surface side of the sheet 71.

  The sheet 71 has a plurality of holes (through holes) 73 formed in a matrix at the same common pitch as described above. Each hole 73 is provided with an elastic contact 72.

  For example, the elastic contact 72 may be formed of the same spiral contact as the second elastic contact 54, but is not limited thereto. When the elastic contact 72 is formed by a spiral contact 74a, as shown in FIG. 3, the spiral contact 74a has an upper surface (a surface on the Z1 side) of the base end portion 74b. The sheet 71 is fixed to the lower surface side of the edge portion of the hole 73.

  As shown in FIG. 7, the connection sheet 70 shown in the second embodiment has a plurality of spiral contacts 74a. Among these, one region 80 indicated by a dotted line in the center of the sheet 71 is an electrode group 2A for grounding. The other portion excluding the one region 80 is a signal elastic contact group 81 mainly corresponding to the signal electrode group 2B. Note that screw holes 71 a are formed at the four corners of the one region 80.

  The heat transfer member 51 is provided on the lower surface (Z2) side of the sheet 71 in correspondence with the one region 80. The heat transfer member 51 is a metal plate formed of any material of copper, copper alloy, aluminum, or aluminum alloy having high conductivity and thermal conductivity as described above.

  The sheet 71 and the heat transfer member 51 are bonded and fixed via an adhesive member 75 provided therebetween, so that a connection sheet (relay member) 70 is integrally formed. The adhesive member 75 is preferably an anisotropic conductive paste (ACP) or an anisotropic conductive film (ACF) having directionality in the plate thickness direction. In this way, when the adhesive member 75 is bonded using an anisotropic conductive adhesive, the contact electrode group 2A and the heat transfer member 51 are set to the same ground potential. At the same time, the heat generated by the semiconductor element 1 can be efficiently guided to the heat conducting member 51 through the elastic contacts 72 and the adhesive member 75 forming the contact electrode group 2A. That is, the connection sheet (relay member) 70 constitutes a heat radiating member that releases the heat generated by the semiconductor element 1 to the outside of the socket 10.

  In addition, only within the one region 80, the base end portions 74b of the adjacent spiral contacts 74a are electrically connected to each other by a conductive layer or a conductive pattern formed on the front surface or the back surface of the connection sheet 71. In this case, the adhesive member 75 may be a non-conductive paste (NCP) or a non-conductive film (NCF). In this case, the adhesive member 75 having a high thermal conductivity is preferable.

  The connection sheet 70 including the heat transfer member 51 is fixed on the mother board 20 in the loading area 10 </ b> A of the socket 10. At this time, the signal electrode group 2 </ b> B provided on the outer peripheral side and the connection electrode 21 formed on the mother substrate 20 are joined by the adhesive member 76. The adhesive member 76 in this case is also preferably an anisotropic conductive paste (ACP) or an anisotropic conductive film (ACF) as described above. As described above, when the adhesive member 75 is bonded using an anisotropic conductive adhesive, the individual external contacts 2 constituting the signal electrode group 2B provided on the outer peripheral side and the mother substrate 20 are connected. The individual connection electrodes 21 formed can be individually conductively connected via the elastic contact group 81 for signals and the adhesive member 76.

  As shown in FIG. 5, at this time, the heat transfer member 51 is inserted into a through hole 20 </ b> B formed in the mother substrate 20, and the lower surface 51 </ b> B of the heat transfer member 51 is lower than the lower surface of the mother substrate 20 in the drawing. It is exposed at the position.

  A heat sink 60 is provided below the mother substrate 20, and the lower surface 51 </ b> B of the heat transfer member 51 and the bonding surface 61 of the heat sink 60 are bonded to each other. That is, it corresponds to the four screw holes 7 formed in the one region 80 surrounded by the dotted line of the connection sheet 71, the four screw holes formed in the heat transfer member 51, and these screw holes. The four screw holes formed in the joining surface 61 of the heat sink 60 are overlapped in the thickness direction, and a common screw is screwed into each screw hole, so that the lower surface 51B and the joining surface 61 are in close contact with each other. It is firmly fixed in the state.

  For this reason, the heat generated in the semiconductor element 1 is applied to the grounding electrode group 2A, the grounding elastic contact group 82 and the adhesive member 75 provided on the connection sheet 70, and further to the heat conducting member 51. The heat is transmitted to the heat sink 60 through the heat sink 60 and can be radiated to the outside through the heat sink 60.

  As described above, according to the present invention, the heat can be released from the lower surface side of the semiconductor element 1 that has not been used as a route for releasing heat conventionally. For this reason, by using with the heat sink separately provided in the upper surface and side surface of the semiconductor element 1, the heat | fever generate | occur | produced inside the semiconductor element 1 can be released more effectively, and it becomes possible to perform appropriate temperature management. .

  In particular, when the socket having the above configuration is used for a burn-in apparatus that performs a thermal cycle test, the temperature of the semiconductor element 1 can be appropriately controlled. For this reason, it is possible to prevent the semiconductor element 1 from being exposed to a severe temperature environment, and it is possible to perform a thermal cycle test under appropriate temperature management.

  In the first and second embodiments, the case of the semiconductor element 1 having a specification in which the ground electrode group 2A is arranged in the center has been described. However, the ground electrode group 2A is the center of the semiconductor element 1. There may be a configuration provided at other positions. In this case, in the first embodiment, the shape of the heat dissipation contact member 50 and the arrangement of the first elastic contact group 32A on the mother substrate 20 side may be changed as appropriate. Similarly, in the second embodiment, the shape of the heat transfer member 51 provided on the lower surface of the connection sheet 70 and the arrangement of the elastic contact groups 82 for signals on the mother board 20 side are appropriately changed accordingly. do it.

  In the second embodiment described above, the connection sheet 70 has a spiral contact 74a only on one upper side and a configuration in which the base end portion 54b of the spiral contact 74a is provided on the lower side. However, the present invention is not limited to this. For example, a pair of spiral contacts 74a and 74a are provided on both sides of the hole 73 of the connection sheet 70, one spiral contact 74a contacts the external contact 2 of the semiconductor element 1, and the other spiral contact. The configuration may be such that 74 a contacts the signal connection contact 21 on the mother board 20. In this case, the external contact 2 and the signal connection contact 21 are electrically connected by the pair of spiral contacts 74a and 74a.

Sectional drawing which shows the state before loading a semiconductor element in a socket as 1st Embodiment of this invention, Sectional drawing similar to FIG. 1 which shows the state after loading a semiconductor element in a socket as embodiment of this invention, A perspective view showing a heat dissipation contact member (heat dissipation member), Sectional drawing which shows an example of an elastic contact, Sectional drawing which shows the state before loading a semiconductor element in a socket as 2nd Embodiment of this invention, Sectional drawing similar to FIG. 5 which shows the state after loading a semiconductor element in a socket as embodiment of this invention, The perspective view which shows the outline of a connection sheet | seat,

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 External contactor 2A Grounding electrode group 2B Signaling electrode group 10 Socket 11 Frame body 12 Holding member 20 Mother board 21 Connection electrode 22 Elastic contact point for signal 30 Relay member 31 Relay electrode 32 Elastic contact point (first contact) 1 elastic contact)
50 Heat dissipation contact member (heat dissipation member)
51 Heat Transfer Member 52 Connection Sheet 53 Hole 54 Second Elastic Contact 54A Second Elastic Contact Group 54a Spiral Contact 55 Adhesive Member 60 Heat Sink 61 Joint Surface 62 Convex Joint 70 Connection Sheet (Relay Member)
71 Sheet 72 Elastic contact 73 Hole (through hole)
74a Spiral contacts 75, 76 Adhesive member 80 One region 81 corresponding to ground electrode 81 Elastic contact group for signal 82 Elastic contact group for ground

Claims (7)

A socket with a heat dissipation function, comprising: a frame body fixed on one surface of a mother board in which a through hole is formed so as to surround the through hole; and a heat sink provided on the other surface of the mother board. ,
The heat sink is provided with a heat radiating member at a position corresponding to the through hole. When the heat sink is fixed to the other surface of the mother board, the heat radiating member is surrounded by the frame body through the through hole. Installed in the loading area,
A socket with a heat radiation function, wherein an external contact provided on a connection surface of the semiconductor element can contact the heat radiation member when the semiconductor element is loaded in the loading area.   The heat dissipation member includes a heat transfer member and a plurality of elastic contacts provided on one surface of the heat transfer member, and the other surface of the heat transfer member is bonded to a bonding surface of the heat sink. The socket with a heat radiation function according to claim 1.   A relay member provided with an elastic contact connected to a mother board is provided in a portion excluding the through hole in the frame body, and the elastic contact provided on the relay member and the elastic provided on the heat dissipation member. The socket with a heat radiation function according to claim 1, wherein the contacts are arranged together in the loading region.   The heat dissipating member has a sheet having a plurality of elastic contacts on the surface, and a heat transfer member having one surface fixed to a region of the back surface of the connection sheet, and the other surface of the heat transfer member is The socket with a heat radiation function according to claim 1, wherein the socket is bonded to a bonding surface of the heat sink.   The socket with a heat radiation function according to any one of claims 2 to 4, wherein the heat transfer member and the plurality of elastic contacts are fixed with an anisotropic conductive adhesive.   The socket with a heat radiation function according to any one of claims 2 to 5, wherein the heat transfer member is formed of any one of copper, a copper alloy, aluminum, or an aluminum alloy.   The socket with a heat radiation function according to any one of claims 1 to 6, wherein the frame body is provided with a holding member for holding a semiconductor element loaded in the loading region.

Images