JP2008078883A - Surface acoustic wave resonator - Google Patents

Surface acoustic wave resonator Download PDF

Info

Publication number
JP2008078883A
JP2008078883A JP2006254323A JP2006254323A JP2008078883A JP 2008078883 A JP2008078883 A JP 2008078883A JP 2006254323 A JP2006254323 A JP 2006254323A JP 2006254323 A JP2006254323 A JP 2006254323A JP 2008078883 A JP2008078883 A JP 2008078883A
Authority
JP
Japan
Prior art keywords
electrode
dummy
acoustic wave
surface acoustic
wave resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006254323A
Other languages
Japanese (ja)
Other versions
JP5028926B2 (en
Inventor
Kazunori Nishimura
和紀 西村
Shinobu Nakatani
忍 中谷
Masaru Matsunami
賢 松波
Hiroyuki Nakamura
弘幸 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2006254323A priority Critical patent/JP5028926B2/en
Publication of JP2008078883A publication Critical patent/JP2008078883A/en
Application granted granted Critical
Publication of JP5028926B2 publication Critical patent/JP5028926B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave resonator having a high Q value. <P>SOLUTION: The surface acoustic wave resonator is provided with a pair of opposed bus bars 11 and an interdigital electrode 13 having a plurality of electrode digits 12 alternately extended from the respective bus bars 11 to the other bus bars 11. The intersecting width of the outside part is set shorter than the intersecting width of the inside part in an intersecting area 14 of the interdigital electrode 13 in which the electrode digits 12 extended from the respective bus bars 11 intersect with each other, a dummy electrode 15 extended from the other bus bar 11 is arranged in the extending direction of each electrode digit 12, a portion on which the dummy electrode 15 is arranged is set as a dummy area 16, and the metallization ratio of the dummy area 16 is set larger than the metallization ratio of the intersecting area 14. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、通信機器等に使用される弾性表面波共振子に関するものである。   The present invention relates to a surface acoustic wave resonator used in communication equipment and the like.

従来のこの種の弾性表面波共振子としては、図５に示すように櫛型電極１の交差幅が中央部で大きく、左右両側に行くに従って一様に小さくなるように重み付けされ、非交差領域２にダミー電極３を配置していた。   A conventional surface acoustic wave resonator of this type is weighted so that the cross width of the comb-shaped electrode 1 is large at the center as shown in FIG. The dummy electrode 3 was disposed on the 2.

なお、この出願の発明に関する先行技術文献情報としては、例えば、特許文献１が知られている。
特開平６−８５６０２号公報 As prior art document information relating to the invention of this application, for example, Patent Document 1 is known.
JP-A-6-85602

上記した従来の弾性表面波共振子においては、交差領域と非交差領域２で電極ピッチが同じであるため、ダミー領域の反射特性におけるストップバンドの周波数に交差領域の放射コンダクタンスのピーク周波数がほぼ一致してしまい、交差領域で励振された弾性表面波がダミー領域を通過してしまう。   In the conventional surface acoustic wave resonator described above, since the electrode pitch is the same in the intersecting region and the non-intersecting region 2, the peak frequency of the radiation conductance in the intersecting region is almost equal to the stopband frequency in the reflection characteristics of the dummy region. As a result, the surface acoustic wave excited in the intersecting region passes through the dummy region.

すなわち、弾性表面波が櫛型電極１の外部にもれてしまうため、弾性表面波共振子のＱ値が劣化してしまうという課題を有していた。   That is, since the surface acoustic wave leaks to the outside of the comb-shaped electrode 1, the Q value of the surface acoustic wave resonator is deteriorated.

本発明は、上記従来の課題を解決するもので、弾性表面波共振子のＱ値を向上させることを目的とするものである。   The present invention solves the above-described conventional problems and aims to improve the Q value of a surface acoustic wave resonator.

上記目的を達成するために本発明は、以下の構成を有するものである。   In order to achieve the above object, the present invention has the following configuration.

本発明の請求項１に記載の発明は、対向する一対のバスバーと、それぞれのバスバーから他方のバスバー側へ交互に延出された複数の電極指を有する櫛型電極とを備え、前記それぞれのバスバーから延びる電極指が交差する前記櫛型電極の交差領域における外側部分の交差幅を内側部分の交差幅より小さく設定し、前記電極指の延伸方向に他方のバスバーから延出したダミー電極を配置するとともに、このダミー電極が設けられた部分をダミー領域とし、前記ダミー領域のメタライゼイションレシオを前記交差領域のメタライゼイションレシオより大きくしたことを特徴とするもので、この構成によれば、交差領域の放射コンダクタンスのピーク周波数をダミー領域の反射領域内に位置させることができるため、エネルギーの閉じ込め効果が高くなり、これにより、弾性表面波共振子のＱ値を向上させることができるという作用効果が得られるものである。   The invention according to claim 1 of the present invention includes a pair of bus bars opposed to each other, and comb-shaped electrodes having a plurality of electrode fingers alternately extended from each bus bar to the other bus bar. The crossing width of the outer part in the crossing region of the comb-shaped electrodes where the electrode fingers extending from the bus bar intersect is set smaller than the crossing width of the inner part, and a dummy electrode extending from the other bus bar is arranged in the extending direction of the electrode finger In addition, the portion provided with the dummy electrode is a dummy region, and the metallization ratio of the dummy region is larger than the metallization ratio of the intersecting region. Since the peak frequency of the radiation conductance in the crossing region can be located in the reflection region of the dummy region, the energy confinement effect is No longer, thereby, in which is the action and effect that it is possible to improve the Q value of the surface acoustic wave resonator is obtained.

本発明の請求項２に記載の発明は、特に、ダミー領域における電極指幅をダミー電極の電極幅と同じにしたもので、この構成によれば、ダミー領域内でのダミー電極およびこれと隣接する電極指が同じ電極幅で且つ等ピッチで配置することができるため、より効果的にエネルギーを閉じ込めることができるため、弾性表面波共振子のＱ値をさらに向上させることができるという作用効果が得られるものである。   According to the second aspect of the present invention, the electrode finger width in the dummy region is made the same as the electrode width of the dummy electrode. According to this configuration, the dummy electrode in the dummy region and the adjacent electrode Since the electrode fingers can be arranged at the same electrode width and at the same pitch, the energy can be more effectively confined, so that the Q value of the surface acoustic wave resonator can be further improved. It is obtained.

以上のように本発明の弾性表面波共振子は、ダミー領域のメタライゼイションレシオを交差領域のメタライゼイションレシオより大きくしているため、弾性表面波共振子のＱ値を向上させることができるという優れた効果を奏するものである。   As described above, since the surface acoustic wave resonator of the present invention has the metallization ratio of the dummy region larger than the metallization ratio of the intersection region, the Q value of the surface acoustic wave resonator can be improved. This is an excellent effect.

図１は本発明の一実施の形態における弾性表面波共振子を形成するインターデジタルトランスデューサ（以下、ＩＤＴと称する）のパターン図であり、このＩＤＴは圧電性基板（図示せず）上に設けられた一対のバスバー１１と、それぞれのバスバー１１から他方のバスバー１１側へ交互に延出された複数の電極指１２を有する櫛型電極１３とを備え、それぞれのバスバー１１から延びる電極指１２が交差する破線で囲まれた交差領域１４における外側部分の交差幅を内側部分の交差幅より小さく設定し、電極指１２の延伸方向に他方のバスバー１１から延出したダミー電極１５を配置したアポダイズ重み付け構成となっている。   FIG. 1 is a pattern diagram of an interdigital transducer (hereinafter referred to as IDT) that forms a surface acoustic wave resonator according to an embodiment of the present invention. This IDT is provided on a piezoelectric substrate (not shown). A pair of bus bars 11 and a comb-shaped electrode 13 having a plurality of electrode fingers 12 alternately extended from each bus bar 11 to the other bus bar 11 side, and the electrode fingers 12 extending from each bus bar 11 intersect. An apodization weighting configuration in which the intersection width of the outer portion in the intersection region 14 surrounded by the broken line is set smaller than the intersection width of the inner portion, and the dummy electrode 15 extending from the other bus bar 11 is arranged in the extending direction of the electrode finger 12 It has become.

なお、交差領域１４における電極指１２の電極ピッチおよび電極幅はともに一定としている。   Note that both the electrode pitch and the electrode width of the electrode fingers 12 in the intersection region 14 are constant.

そして、このＩＤＴにおいては、ダミー電極１５が設けられる部分、すなわち隣接するダミー電極１５の先端部分を結ぶ包絡線とバスバー１１で囲まれる部分をダミー領域１６とし、図２に示されるごとくダミー領域１６におけるダミー電極１５の電極幅ｔ１を対向する電極指１２の電極幅ｔ２より大きく設定しており、これによりダミー領域１６のメタライゼイションレシオを交差領域１４のメタライゼイションレシオより大きく設定している。   In this IDT, a portion where the dummy electrode 15 is provided, that is, a portion surrounded by the envelope connecting the tip portion of the adjacent dummy electrode 15 and the bus bar 11 is set as the dummy region 16, and the dummy region 16 as shown in FIG. The electrode width t1 of the dummy electrode 15 is set to be larger than the electrode width t2 of the opposing electrode finger 12, thereby setting the metallization ratio of the dummy region 16 to be larger than the metallization ratio of the intersecting region 14. .

このような構成とすることで、ダミー領域１６での音速が遅くなり図３に示されるようにダミー電極１５の反射特性を周波数の低い側へシフトさせる（１７ａ→１７ｂ）ことができ、交差領域１４の放射コンダクタンス１８のピーク周波数をダミー領域１６の反射領域内に位置させることができるため、エネルギーの閉じ込め効果が高くなり、これにより、弾性表面波共振子のＱ値を向上させることができるのである。   With such a configuration, the sound speed in the dummy region 16 becomes slow, and the reflection characteristic of the dummy electrode 15 can be shifted to a lower frequency side (17a → 17b) as shown in FIG. Since the peak frequency of the radiative conductance 18 of 14 can be located in the reflection region of the dummy region 16, the energy confinement effect is enhanced, and thereby the Q value of the surface acoustic wave resonator can be improved. is there.

さらに図４に示されるようにダミー領域１６における電極指１２の電極幅をダミー電極１５の電極幅と同じにすることで、ダミー領域１６内におけるダミー電極１５およびこれと隣接する電極指１２が同じ電極幅で且つ等ピッチで配置することができるため、より効果的にエネルギーを閉じ込めることができ、弾性表面波共振子のＱ値をさらに向上させることができる。   Furthermore, as shown in FIG. 4, by making the electrode width of the electrode finger 12 in the dummy region 16 the same as the electrode width of the dummy electrode 15, the dummy electrode 15 in the dummy region 16 and the electrode finger 12 adjacent thereto are the same. Since the electrodes can be arranged with the electrode width and the equal pitch, energy can be confined more effectively, and the Q value of the surface acoustic wave resonator can be further improved.

本発明に係る弾性表面波共振子は、Ｑ値が高いという効果を有するものであり、通信機器等に使用される弾性表面波共振子等において有用となるものである。   The surface acoustic wave resonator according to the present invention has an effect that the Q value is high, and is useful in a surface acoustic wave resonator used for communication equipment or the like.

本発明の一実施の形態における弾性表面波共振子を構成するＩＤＴのパターン図Pattern diagram of IDT constituting surface acoustic wave resonator according to one embodiment of the present invention 同ＩＤＴの部分拡大図Partial enlarged view of the IDT 同ＩＤＴの周波数特性図Frequency characteristics diagram of the IDT 他の実施形態における同ＩＤＴの部分拡大図Partial enlarged view of the IDT in another embodiment 従来の弾性表面波共振子を構成するＩＤＴのパターン図IDT pattern diagram of a conventional surface acoustic wave resonator

符号の説明Explanation of symbols

１１ バスバー
１２ 電極指
１３ 櫛型電極
１４ 交差領域
１５ ダミー電極
１６ ダミー領域 11 Bus Bar 12 Electrode Finger 13 Comb Electrode 14 Crossing Region 15 Dummy Electrode 16 Dummy Region

Claims (2)

対向する一対のバスバーと、それぞれのバスバーから他方のバスバー側へ交互に延出された複数の電極指を有する櫛型電極とを備え、前記それぞれのバスバーから延びる電極指が交差する前記櫛型電極の交差領域における外側部分の交差幅を内側部分の交差幅より小さく設定し、前記電極指の延伸方向に他方のバスバーから延出したダミー電極を配置するとともに、このダミー電極が設けられた部分をダミー領域とし、前記ダミー領域のメタライゼイションレシオを前記交差領域のメタライゼイションレシオより大きくしたことを特徴とする弾性表面波共振子。 A pair of opposing bus bars; and comb electrodes having a plurality of electrode fingers alternately extended from each bus bar to the other bus bar, the electrode electrodes extending from the respective bus bars intersecting each other The crossing width of the outer part in the crossing area of the inner part is set to be smaller than the crossing width of the inner part, a dummy electrode extending from the other bus bar is arranged in the extending direction of the electrode finger, and the part where the dummy electrode is provided A surface acoustic wave resonator having a dummy region and a metallization ratio of the dummy region larger than a metallization ratio of the intersecting region. ダミー領域における電極指幅をダミー電極の電極指と同じにした請求項１記載の弾性表面波共振子。 2. The surface acoustic wave resonator according to claim 1, wherein the electrode finger width in the dummy region is the same as that of the dummy electrode.
JP2006254323A 2006-09-20 2006-09-20 Surface acoustic wave resonator Active JP5028926B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006254323A JP5028926B2 (en) 2006-09-20 2006-09-20 Surface acoustic wave resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006254323A JP5028926B2 (en) 2006-09-20 2006-09-20 Surface acoustic wave resonator

Publications (2)

Publication Number Publication Date
JP2008078883A true JP2008078883A (en) 2008-04-03
JP5028926B2 JP5028926B2 (en) 2012-09-19

Family

ID=39350502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006254323A Active JP5028926B2 (en) 2006-09-20 2006-09-20 Surface acoustic wave resonator

Country Status (1)

Country Link
JP (1) JP5028926B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2017051874A1 (en) * 2015-09-25 2018-07-05 京セラ株式会社 Elastic wave device and elastic wave device
US10270425B2 (en) 2016-06-22 2019-04-23 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, and multiplexer
US10361678B2 (en) 2015-12-14 2019-07-23 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, and duplexer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110809A (en) * 1986-10-29 1988-05-16 Matsushita Electric Ind Co Ltd Surface acoustic wave propagation element
JPH06164297A (en) * 1992-02-12 1994-06-10 Kokusai Electric Co Ltd Surface acoustic wave resonator
JPH0722898A (en) * 1993-06-30 1995-01-24 Murata Mfg Co Ltd Surface acoustic wave element
JP2003198317A (en) * 2001-12-21 2003-07-11 Fujitsu Media Device Kk Acoustic surface wave resonator and filter therefor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110809A (en) * 1986-10-29 1988-05-16 Matsushita Electric Ind Co Ltd Surface acoustic wave propagation element
JPH06164297A (en) * 1992-02-12 1994-06-10 Kokusai Electric Co Ltd Surface acoustic wave resonator
JPH0722898A (en) * 1993-06-30 1995-01-24 Murata Mfg Co Ltd Surface acoustic wave element
JP2003198317A (en) * 2001-12-21 2003-07-11 Fujitsu Media Device Kk Acoustic surface wave resonator and filter therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2017051874A1 (en) * 2015-09-25 2018-07-05 京セラ株式会社 Elastic wave device and elastic wave device
US10361678B2 (en) 2015-12-14 2019-07-23 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, and duplexer
US10270425B2 (en) 2016-06-22 2019-04-23 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, and multiplexer

Also Published As

Publication number Publication date
JP5028926B2 (en) 2012-09-19

Similar Documents

Publication Publication Date Title
JP6188869B2 (en) Elastic wave device with high-order transverse mode wave suppressed
CN101405938B (en) Elastic wave resonator
JP6281639B2 (en) Elastic wave device
JP4915191B2 (en) Surface acoustic wave resonator
JP2015073207A (en) Acoustic wave resonator
JP2009278429A (en) Surface acoustic wave device
JP5333650B2 (en) Elastic wave device
JP2002084162A5 (en)
CN114268294B (en) SAW device including hybrid weighting type reflection grating and hybrid weighting type reflection grating
JP2009219045A (en) Acoustic wave resonator and acoustic wave device
JP5028926B2 (en) Surface acoustic wave resonator
JP4246604B2 (en) Surface acoustic wave device
JP4915190B2 (en) Surface acoustic wave resonator
JP5045063B2 (en) Surface acoustic wave resonator
JP6276354B2 (en) Interdigital transducer
JP2007096527A (en) Surface acoustic wave device
WO2012160730A1 (en) Acoustic wave filter device
JP2008148184A (en) Surface acoustic wave resonator
JP2011041082A (en) One-port type elastic wave resonator and elastic wave filter device
JP5365406B2 (en) Elastic wave filter
JP5860675B2 (en) Elastic wave device
JP2006287680A (en) Surface acoustic wave element piece and surface acoustic wave device
JP4292937B2 (en) Surface acoustic wave filter device
JP2006203778A (en) Surface acoustic wave element and surface acoustic wave device
JP2005176338A (en) Acoustic surface wave device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090821

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20090914

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120228

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120529

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120611

R151 Written notification of patent or utility model registration

Ref document number: 5028926

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150706

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250