JP2008060443A - Electronic circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic circuit device capable of miniaturizing a coil in communication between IC bare chips (circuit modules) combined so that data can be delivered and received mutually and also reducing power consumption, while enabling much more miniaturization as the whole device in comparison with conventional one. <P>SOLUTION: A first circuit module 110 and a second circuit module 120 are connected with an interface circuit 130 which delivers and receives data between both. This interface circuit 130 is constituted so that data may be delivered and received by including a magnetic resistance element and by utilizing the magnetic resistance effect relating to the magnetic resistance element. With this composition, an electronic circuit device can be constituted with a non-contact state kept thereon, and without including such a component impeding miniaturization such as a comparatively large coil and the like. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electronic circuit device configured by combining a plurality of circuit modules, and more particularly to an improvement in an interface unit that exchanges signals between these circuit modules.

  There has been proposed an electronic circuit capable of efficiently transmitting signals even when three or more substrates such as an IC bare chip and a PCB are three-dimensionally mounted and signals are transmitted across the substrates. The electronic circuit in this proposal has a first substrate having a first coil formed by wiring on the substrate, and a second substrate that is formed at a position corresponding to the first coil by wiring on the substrate and is inductively coupled to the first coil. A second substrate having a coil.

The first substrate further includes a transmission circuit that outputs a signal to the first coil when digital data for transmission changes, so that power consumption can be reduced. The second substrate further includes a receiving circuit for connecting both ends of the second coil to a predetermined voltage source via a resistor, so that a center voltage having a voltage amplitude generated at both ends of the receiving coil at the time of signal reception can be obtained as a signal. It is possible to obtain an optimum voltage value for amplification.
Here, the first coil is inductively coupled to the second coils of the plurality of second substrates, so that a bus extending over three or more substrates can be formed. In addition, it is said that the second substrate further includes a receiving circuit that receives a signal only for a predetermined period in a periodic manner, so that the SN ratio can be increased (Patent Document 1).

  In addition, in a semiconductor device in which a plurality of semiconductor chips can be stacked in a three-dimensional direction, there is also a proposal for a semiconductor device that can be mounted at high density, has high reliability, and is versatile, and an assembling method thereof. Among these proposals, a semiconductor device includes a mounting substrate, a mounting-side electrode on the mounting substrate, a chip-side protruding electrode connected to the mounting-side electrode, a semiconductor chip in which the chip-side protruding electrode is connected to the element surface, and a semiconductor The back surface of the chip is fixed, and the first substrate having the first main surface facing the mounting substrate, the substrate-side lower electrode disposed on the first main surface, the substrate-side lower electrode, and the chip-side protruding electrode are connected. The gist of the present invention is that the semiconductor device includes a bonding wire to be bonded and a sealing resin around the semiconductor chip.

  According to a proposal relating to a method for assembling a semiconductor device, a step of fixing a back surface of a semiconductor chip to a first main surface of a first substrate, a step of disposing a substrate-side lower electrode on the first main surface, a substrate-side lower electrode, The element surface of the semiconductor chip is connected by a bonding wire, the step of connecting the chip side protruding electrode to the element surface, the first main surface is opposed to the mounting substrate, and the mounting side electrode of the mounting substrate and the chip side protruding electrode are connected And a method for assembling a semiconductor device including a step of sealing the periphery of the semiconductor chip with a sealing resin.

According to such a technique, a semiconductor device capable of stacking a plurality of semiconductor chips in a three-dimensional direction can be mounted at high density, and a highly reliable and versatile semiconductor device and an assembling method thereof can be provided. (Patent Document 2).
Japanese Patent Laying-Open No. 2005-228981 (paragraphs 0009 to 0017, FIG. 1) Japanese Patent Laying-Open No. 2006-179608 (paragraphs 0005 to 0007, FIG. 1)

In the technique proposed in the above-mentioned Patent Document 1, the following technical problems remain. That is,
(A) Sensitivity problem on the receiving side: On the transmitting side, it is possible to create a transmission signal that matches the sensitivity on the receiving side by increasing the current flowing into the coil, but considering the effective use of the chip area Miniaturization of the coil is essential. In this case, the transmitter side can be adjusted to some extent by the flowing current for this downsizing, but the receiver side has its sensitivity greatly reduced because its reception sensitivity depends on the shape of the coil. Therefore, further transmission power is required, and the energy reachable distance is further reduced.

(B) Problem of miniaturization limit: The coil to be used is formed of a thin film conductor, and is generally a conductor of about 1 micron, and the width is about several microns, so that a current that can be practically flowed. There is a limit to the amount. In general, 1 mA is generally used as a guideline for a 1 micron width conductor. When the current exceeds that, heat is generated in the conductor, and a problem such as a short circuit between the conductors occurs due to the migration of the conductor due to the heat. Therefore, there is inevitably a limit of downsizing (fine line) of the transmission side coil. Further, the size reduction is limited due to the limit of the coil configuration (the magnetic core region (even air core) is formed to make the conductor have a swivel structure).

(C) Problems in the method of providing a magnetic body (magnetic core) in the core of each coil: The conductors and the like formed on the IC chip are basically formed by using a thin film technology, and thus formed on the chip. The magnetic core of the coil is also a thin film magnetic material. However, the magnetic field used is formed in a direction perpendicular to the thin film core (thickness direction). In general, when the thickness of the magnetic body in the direction in which the magnetic field is formed becomes thin, a large demagnetizing field is formed with respect to the invading magnetic field, so that the magnetic field does not effectively enter. Therefore, even if a magnetic material is used, a good effect cannot be expected.

On the other hand, in the technique proposed in Patent Document 2, the lower electrode of the first substrate and the element surface of the semiconductor chip are connected by a bonding wire, and the chip-side protruding electrode is connected to the element surface. 1. A method on the premise that an electrical contact portion is provided, including the step of having one main surface face the mounting substrate and connecting the mounting-side electrode and the chip-side protruding electrode of the mounting substrate. Therefore, there is a limit to downsizing.
The present invention has been made in view of the above-described situation, and the coil in communication between IC bare chips (circuit modules) can be miniaturized, and the apparatus as a whole can be further miniaturized as compared with the prior art. A further object is to provide an electronic circuit capable of reducing power consumption.

In order to solve the above problems, the present application proposes the following technologies.
(1) An electronic circuit device including a first circuit module, a second circuit module, and an interface circuit unit that exchanges data between the first circuit module and the second circuit module, The interface circuit unit includes a magnetoresistive element, and is configured to exchange data using a magnetoresistive effect related to the magnetoresistive element.

  In the electronic circuit device of the above (1), the first circuit module and the second circuit module are connected by an interface circuit unit that exchanges data between the two, and the interface circuit unit includes a magnetoresistive element. Since it is configured to send and receive data using the magnetoresistive effect of the magnetoresistive element, it is non-contact and does not include elements that hinder downsizing of relatively large coils, etc. Therefore, the overall size can be reduced, and power saving can be achieved.

(2) The first circuit module includes a drive current generation signal conversion circuit that generates a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element of the interface circuit unit. (1) The electronic circuit device characterized by the above-mentioned.
In the electronic circuit device of (2), particularly in the electronic circuit device of (1), the first circuit module is for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element of the interface circuit unit. Since a drive current generation signal conversion circuit for generating a drive current is provided, a magnetic field generated by the drive current generated by the drive current generation signal conversion circuit is caused to act on the magnetoresistive element to transmit digital data. Responding to this magnetic field, and thus changing the resistance value in the magnetoresistive element in response to the change in this magnetic field (by modulating the resistance value)
It becomes possible to transmit digital data to the subsequent circuit module (second circuit module) without contact.

(3) The second circuit module detects resistance value change in the magnetoresistive element of the interface circuit unit that changes due to a magnetic field corresponding to digital data transmitted from the first circuit module. An electronic circuit device according to (1), comprising a signal conversion circuit.
In the electronic circuit device of the above (3), in particular, in the electronic circuit device of (1), the second circuit module has a magnetic field of the interface circuit unit that changes due to a magnetic field corresponding to digital data transmitted from the first circuit module. Since it has a resistance value detection signal conversion circuit that detects changes in the resistance value of the resistance element, the resistance value detection signal conversion circuit detects the resistance value of the magnetoresistance element that changes according to the magnetic field corresponding to the digital data. By doing so, digital data transmitted from the preceding circuit module (first circuit module) can be received without contact.

  (4) The interface circuit unit is driven by a drive current generation signal conversion circuit that generates a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element to generate a magnetic field. (1) characterized by comprising a generating element part, and a resistance value detecting element part including the magnetoresistive element and a conductor part for detecting the resistance value of the magnetoresistive element. Electronic circuit device.

  In the electronic circuit device of the above (4), in particular, in the electronic circuit device of (1), the interface circuit unit drives to generate a driving current for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element. A magnetic field generating element unit that is driven by a signal generating circuit for current generation to generate a magnetic field, and a resistance value detecting element unit including a magnetoresistive element and a conductor part for detecting a resistance value of the magnetoresistive element Therefore, for example, a change in the resistance value generated in the magnetoresistive element due to the magnetic field generated in the magnetic field generating element unit which is a conducting wire for passing a driving current is detected from the resistance value detecting element unit including the magnetoresistive element. The signal (digital data) is transmitted in a non-contact manner from the front circuit module to the rear circuit module.

  (5) The interface circuit unit is driven by a drive current generation signal conversion circuit that generates a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element to generate a magnetic field. A plurality of transmission / reception systems each including an element pair of a generation element section and a resistance value detection element section having a conductor section and the like for detecting the magnetoresistive element and the resistance value of the magnetoresistive element are provided. (4) Electronic circuit apparatus characterized by the above-mentioned.

In the electronic circuit device of (5), particularly in the electronic circuit device of (4), the interface circuit unit generates a drive current for causing the magnetic resistance element to act on a magnetic field that changes according to digital data to be transmitted. A magnetic field generating element unit that is driven by a drive current generation signal conversion circuit to generate a magnetic field, and a resistance value detecting element unit having a magnetoresistive element and a conductor part for detecting the resistance value of the magnetoresistive element Since multiple transmission / reception systems including pairs are provided, signals (digital data) are transmitted from the front-side circuit module to the rear-side circuit module through a plurality of transmission lines including the plurality of element pairs. Can be transmitted in parallel and contactlessly. High-speed data exchange can be performed between both circuit modules.

(6) The magnetic field generating element unit is configured integrally with the first circuit module, and the resistance value detecting element unit is configured integrally with the second circuit module. (4) Electronic circuit device.
In the electronic circuit device of (6), particularly in the electronic circuit device of (4), the magnetic field generating element unit is configured integrally with the first circuit module, and the resistance value detecting element unit is the second circuit module. Therefore, the overall size can be reduced.

  (7) The first circuit module generates a first drive current for generating a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the second magnetoresistive element of the interface circuit unit. First resistance value detection for detecting a change in resistance value in the first magnetoresistive element of the interface circuit section that changes due to a magnetic field corresponding to the digital data transmitted from the signal conversion circuit and the second circuit module A signal conversion circuit, and the second circuit module generates a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the first magnetoresistive element of the interface circuit unit. 2 driving current generation signal conversion circuit and a magnetic field corresponding to digital data transmitted from the first circuit module. (2) An electronic circuit device according to (1), further comprising: a second resistance value detection signal conversion circuit that detects a change in resistance value of the second magnetoresistive element of the interface circuit unit. .

  In the electronic circuit device of (7), particularly in the electronic circuit device of (1), on the first circuit module side, the second magnetic field is generated according to the digital data transmitted through the first drive current generation signal conversion circuit. The digital data to be transmitted is sent out so as to modulate the magnetic field applied to the resistance element, while the digital data transmitted from the second circuit module through the first resistance value detection signal conversion circuit is sent to the first magnetic field. The digital data is received by detecting the change in the resistance value of the resistance element.

Similarly, on the second circuit module side, the digital data transmitted so as to modulate the magnetic field applied to the first magnetoresistive element in accordance with the digital data transmitted through the second drive current generation signal conversion circuit. On the other hand, digital data transmitted from the first circuit module through the second resistance value detection signal conversion circuit is detected as a change in resistance value in the second magnetoresistive element, and the digital data is received. To do.
As described above, bidirectional signals (digital data) can be exchanged between the first circuit module side and the second circuit module side.

  (8) The interface circuit section is driven by the first drive current generation signal conversion circuit to generate a magnetic field, the second magnetic resistance element, and the second magnetic resistance element. A magnetic field is generated by being driven by the first element pair of the first resistance value detecting element part having a conductor part or the like for detecting the resistance value of the resistance element and the second drive current generating signal conversion circuit. And a second magnetic field generating element section, a second resistance value detecting element section having a first magnetoresistive element and a conductor section for detecting a resistance value of the first magnetoresistive element. (7) The electronic circuit device according to (7), comprising a plurality of transmission / reception systems including both element pairs.

In the electronic circuit device of (8), particularly in the electronic circuit device of (7), the interface circuit unit is driven by the first drive current generation signal conversion circuit and generates a magnetic field. A first element pair of the second resistance element and a first resistance value detection element section having a conductor section for detecting the resistance value of the second magnetoresistance element and the second magnetoresistance element, and a second drive A second magnetic field generating element unit that is driven by the signal generating circuit for current generation and generates a magnetic field;
And a second resistance value detection element section having a conductor section for detecting a resistance value of the first magnetoresistance element and a second element pair. Since a plurality of transmission / reception systems are provided, bidirectional signals (in the first circuit module side and the second circuit module side) are transmitted by a plurality of transmission paths including a plurality of element pairs. Digital data) can be transmitted in parallel and contactlessly. High-speed data exchange can be performed between both circuit modules.

(9) The electronic circuit device according to any one of (1) to (8), wherein the magnetoresistive element is any one of TMR, GMR, and CPP-GMR.
In the electronic circuit device of the above (9), in particular, in the electronic circuit device of any one of (1) to (8), the magnetoresistive element is any of TMR, GMR, and CPP-GMR, so that the efficiency is high. Transmission of signals (digital data) can be performed.

(10) The electronic circuit device according to any one of (1) to (8), wherein the first circuit module is a microprocessor.
In the electronic circuit device of the above (10), particularly in the electronic circuit device of any one of (1) to (8), particularly between the microprocessor as the first circuit module and the other second circuit module. An efficient signal (digital data) can be transmitted.

(11) The electronic circuit device according to any one of (1) to (8), wherein the second circuit module is a memory.
In the electronic circuit device of the above (11), in particular, in the electronic circuit device of any one of (1) to (8), a memory as a second circuit module and a first circuit module that can be a microprocessor, for example. The signal (digital data) can be transmitted accurately and efficiently.

(12) The electronic circuit device according to any one of (1) to (8), wherein the second circuit module is an ASIC.
In the electronic circuit device according to (12), in particular, in the electronic circuit device according to any one of (1) to (8), an ASIC that can partially include an analog circuit as a second circuit module, for example, a microprocessor. An accurate and efficient signal (digital data) can be transmitted to and from the obtained first circuit module.

(13) The electronic circuit device according to any one of (1) to (8), wherein the second circuit module is an analog IC.
In the electronic circuit device of the above (13), in particular, in the electronic circuit device of any one of (1) to (8), an analog IC (which may include an AD converter and a DA converter) as a second circuit module, for example, a micro An accurate and efficient signal (digital data) can be transmitted to and from the first circuit module, which can be a processor.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to below, for the sake of convenience, the main part that is the subject of the description is exaggerated as appropriate, and other than the main part is appropriately simplified or omitted.
FIG. 1 is a diagram showing an electronic circuit device as an embodiment of the present invention. In FIG. 1, this electronic circuit device 10 includes a first circuit module 110 mainly composed of a microprocessor 111 and a second circuit module 120 mainly composed of a memory 121. It is configured by being connected by an interface circuit unit 130 (consisting of individual interface circuit units 131-1, 131-2,..., 131-n) that performs transmission and reception.

Each of the interface circuit units 131-1, 131-2,..., 131-n includes a magnetoresistive element and uses the magnetoresistive effect of the magnetoresistive element as will be described in detail later with reference to the drawings. It is configured to send and receive data.
The first circuit module 110 is a drive for causing the magnetic resistance element of the interface circuit unit 130 to act on a magnetic field that changes in accordance with digital data transmitted from the microprocessor 111 (denoted as CPU in the figure) 111 to the memory 121. Each drive current generation signal conversion circuit 112 for generating a current is provided. The drive current generation signal conversion circuit 112 is configured as an assembly of individual drive current generation signal conversion circuits 112-1, 112-2,... 112-n, which are simply abbreviated as signal conversion circuits in the drawing. ing.

On the other hand, the second circuit module 120 is for detecting each resistance value that detects a change in resistance value in the magnetoresistive element of the interface circuit unit 130 that is changed by a magnetic field corresponding to the digital data transmitted from the first circuit module 110. A signal conversion circuit 122 is provided.
The resistance value detection signal conversion circuit 122 is configured as an assembly of individual resistance value detection signal conversion circuits 122-1, 122-2,... 122-n, which are simply abbreviated as signal conversion circuits in the drawing. ing.

In addition, the interface circuit unit 130 generates the above-described drive current that generates a drive current for causing a magnetic field that changes according to digital data transmitted from the first circuit module 110 (the microprocessor 111) to act on the magnetoresistive element. Magnetic field generating element sections 13P-1, 13P-2,... 13P-n that are driven by the signal conversion circuits 112-1, 112-2,. Each of the resistance value detecting element portions 13S-1, 13S-2,... 13S-n including a conductor portion for detecting the resistance value of the element is configured.
In the interface circuit unit 130, the magnetic field generating element units 13P-1, 13P-2,... 13P-n and the resistance value detecting element units 13S-1, 13S-2,. Thus, a plurality of transmission / reception systems of signals (digital data) by these element pairs are provided.

2 shows a signal conversion circuit (drive current generation signal conversion circuit and resistance value detection) applied when data is transferred in one direction, for example, from the first circuit module 110 to the second circuit module 120. It is a conceptual diagram showing the structure of a signal conversion circuit) and an interface part.
The configuration in FIG. 2 representatively represents one of a plurality of signal transmission (transfer) paths in the configuration in FIG. 1, and the signal sent from the drive current generation signal conversion circuit 112 is an interface circuit unit. This corresponds to the portion transferred through 130 to the resistance value detection signal conversion circuit 122 side.

The drive current generation signal conversion circuit 112 is provided with two constant current power supplies CCS1 and CCS2, and the directions of currents flowing from the two constant current power supplies CCS1 and CCS2 toward the corresponding ground potentials are the constant current power supplies. Switching is performed by changeover switches COS1 and COS2 provided corresponding to CCS1 and CCS2. This switching is controlled by the switching control circuit 114. The switching control operation in the switching control circuit 114 is performed according to a signal (switching between “0” and “1” of digital data) sent from the first circuit module 110 supplied to the data input terminal IN.
The current thus controlled for switching flows through the conductor 13Pw as the magnetic field generating element unit 13P of the interface circuit unit 130 as the drive current described above, and a magnetic field corresponding to the direction and magnitude of the current is generated around the conductor 13Pw. appear.

The magnetic field generated in this way acts on the magnetoresistive element MR2 in the resistance value detecting element portion 13S including the magnetoresistive element MR2 and the two conductors 13Sw1 and 13Sw2, which are circuits for detecting the resistance value of the magnetoresistive element MR2. However, the resistance value changes according to the state of the magnetic field. The change in the resistance value is detected by the resistance value detection signal conversion circuit 122, and a signal (data) is transmitted as modulation related to the resistance value of the magnetoresistive element MR2.
The resistance value detection signal conversion circuit 122 is provided with a sense amplifier 122a that detects the resistance value of the magnetoresistive element MR2 through the two conductors 13Sw1 and 13Sw2, and the output terminal of the sense amplifier 122a receives the received signal. The output terminal is a data output terminal OUT.

FIG. 3 shows a case where data is transferred in both directions, for example, from the first circuit module 110 to the second circuit module 120 and from the second circuit module 120 to the first circuit module 110. It is a conceptual diagram showing the structure of the signal conversion circuit (the signal conversion circuit for drive current generation | occurrence | production, and the signal conversion circuit for resistance value detection) applied, and an interface part applied.
The configuration in FIG. 3 also representatively represents one of a plurality of signal transmission (transfer) paths in the configuration in FIG. 1, as described above with reference to FIG.

  However, in the configuration of FIG. 3, the signal sent from the drive current generation signal conversion circuit 112 on the first circuit module 110 side passes through the interface circuit unit 130 and the resistance value detection signal conversion on the second circuit module 120 side. Transmission of the signal in one direction transferred to the circuit 122 side and the signal sent from the drive current generation signal conversion circuit 162 on the second circuit module 120 side in the opposite direction are transmitted through the interface circuit unit 130 to the first. A system for transmission to the resistance value detection signal conversion circuit 141 on the circuit module 120 side is provided side by side so that bidirectional signal transmission is performed.

3, parts corresponding to those in FIG. 2 are denoted by the same reference numerals, and description of each part is omitted for matters that are not described.
A direction in which the signal sent from the drive current generation signal conversion circuit 112 on the first circuit module 110 side is transferred to the resistance value detection signal conversion circuit 122 side on the second circuit module 120 side through the interface circuit unit 130. The signal transmission system is substantially the same as the configuration described with reference to FIG. 2, but the configuration for transmitting and receiving bidirectional data is slightly different.

That is, the drive current generation signal conversion circuit 112 is provided with two constant current power supplies CCS1 and CCS2, and the directions of currents flowing from the two constant current power supplies CCS1 and CCS2 toward the corresponding ground potentials are respectively determined. Switching is performed by changeover switches COS1 and COS2 provided corresponding to the current power supplies CCS1 and CCS2.
This switching is controlled by the switching control circuit 114. The switching control operation in the switching control circuit 114 is executed according to a signal supplied from the input / output switching control circuit COC1. The input / output switching control circuit COC1 has a data input terminal IN1 and a data output terminal OUT1, and is configured to perform a switching control operation relating to data input / output through these terminals.

That is, in the transmission mode in which a signal is transmitted from the first circuit module 110 side to the second circuit module 120 side (viewed from the first circuit module 110 side), the first input supplied to the data input terminal IN1 is performed. A signal to be transmitted from the circuit module 110 (switching of digital data “0” and “1”) is supplied to the switching control circuit 114 through the input / output switching control circuit COC1, and the switching control circuit 114 receives the supplied signal. As described above with reference to FIG. 2, the drive current flowing through the conductor 13Pw as the magnetic field generating element portion 13P is switched to the direction corresponding to the signal.

In this way, the generated magnetic field also changes due to the drive current modulated so that the direction of the current is reversed according to the data to be transmitted, and the resistance of the magnetoresistive element MR2 whose resistance value changes according to the change in the magnetic field. The value is modulated and a signal is transmitted to the second circuit module 120 side.
In this case, the resistance value of the magnetoresistive element MR2 corresponds to the magnetoresistive element MR2 and the resistance value detecting element portion 13S including the two conductors 13Sw1 and 13Sw2, which are circuits for detecting the resistance value of the magnetoresistive element MR2. The resistance value of the element MR2 is detected by the resistance value detection signal conversion circuit 122 (sense amplifier 122a in the same circuit), so that a signal (data) is transmitted.

The output of the resistance value detection signal conversion circuit 122 (sense amplifier 122a) is switched through the input / output switching control circuit COC2 and selectively received at the receiving side (for example, the second circuit module 120 side). .
This input / output switching control circuit COC2 has a data input terminal IN2 and a data output terminal OUT2 as well as the above-described input / output switching control circuit COC1, and performs a switching control operation related to input / output of data through these terminals.

  That is, if the viewpoint is turned to the second circuit module 120 side, a signal is transmitted from the first circuit module 110 side to the second circuit module 120 side (as viewed from the second circuit module 120 side). In the mode, data output from the sense amplifier 122a is output from the data output terminal OUT2 and supplied to the second circuit module 120 as received data.

  Next, if the seat is returned to the first circuit module 110 side, a signal is transmitted from the second circuit module 120 side to the first circuit module 110 side (as viewed from the first circuit module 110 side). In the mode, a signal to be sent from the second circuit module 120 supplied to the data input terminal IN2 (switching of digital data “0” and “1”) is sent to the switching control circuit 124 through the input / output switching control circuit COC2. Based on the supplied signal, the switching control circuit 124 supplies a driving current while switching the conductor 13Sw2 when functioning as the magnetic field generating element unit 13S in the direction corresponding to the signal, and is generated by this driving current. The resistance value of the magnetoresistive element MR1 whose resistance value changes according to the magnetic field to be modulated is modulated and a signal is transmitted to the first circuit module 110 side. It is.

  The drive current generation signal conversion circuit 162 on the second circuit module 120 side that generates a drive current whose direction of flow changes in this way is provided with two constant current power supplies CCS1-a and CCS2-a. Changeover switches COS1-a and COS2 in which the directions of currents flowing from the two constant current power supplies CCS1-a and CCS2-a toward the corresponding ground potentials are provided corresponding to the constant current power supplies CCS1-a and CCS2-a, respectively. It is switched by -a.

  This switching is controlled by the switching control circuit 124. The switching control operation in the switching control circuit 124 includes a data input terminal IN2 and a data output terminal OUT2, and a signal (from the input / output switching control circuit COC2 that performs a switching control operation related to data input / output through these terminals ( This is executed in accordance with a signal supplied through the data input terminal IN2.

The resistance value of the magnetoresistive element MR1 modulated in accordance with the signal supplied through the data input terminal IN2 as described above is the magnetoresistive element MR1 and two circuits that detect the resistance value of the magnetoresistive element MR1. When the resistance value of the magnetoresistive element MR2 in the resistance value detecting element portion 13P including the conductors 13Pw1 and 13Pw2 is detected by the resistance value detecting signal conversion circuit 141 (sense amplifier 141a in the same circuit), the signal (data) Transmission takes place.
The output of the resistance value detection signal conversion circuit 141 (sense amplifier 141a) is switched through the input / output switching control circuit COC1 and selectively received at the receiving side (in this case, the first circuit module 110 side). become.

  FIG. 4 is a conceptual diagram showing an embodiment of the present invention configured to include two semiconductor chips and an interface circuit section formed between the semiconductor chips. In FIG. 4, one of the two semiconductor chips arranged facing each other is, for example, a first corresponding to the first circuit module in the electronic circuit device of the present invention described with reference to FIGS. The other is the semiconductor chip 11 and the other is the second semiconductor chip 21 corresponding to the second circuit module in the electronic circuit device of the present invention described with reference to FIGS.

  In order to transmit various data from the first semiconductor chip 11 to the second semiconductor chip 21, a plurality of filaments formed at corresponding portions in both the first semiconductor chip 11 and the second semiconductor chip 21. In each part of the conductor I / O lines 12-1, 12-2,..., 12-n and 21-1, 21-2,..., 21-n, the chips 11 and 21 are indicated by arrows in the figure. In this way, the two are displaced so that the I / O lines corresponding to each other are opposed to each other.

Only the I / O line for transmitting data is arranged on the first semiconductor chip 11 side, but the second semiconductor chip 21 side has a large magnetoresistance ratio as a magnetoresistive element, for example, TMR (Tunneling Magneto Resistance) elements MR2-1, MR2-2,..., MR2-n are added to the corresponding I / O lines.
Each of the I / O lines 12-1, 12-2,..., 12-n on the first semiconductor chip 11 side is overlapped so that the corresponding I / O lines are opposed to each other. 2 corresponds to the magnetic field generating element section described with reference to FIG. 2, and each I / O line 21-1, 21-2,... The magnetoresistive elements MR2-1, MR2-2,..., MR2-n correspond to the resistance value detecting element portion described with reference to FIG.

FIG. 5 is a view of the state in which the first semiconductor chip 11 and the second semiconductor chip 21 in FIG. That is, FIG. 5A shows I / O lines 12-1, 12-2,..., 12-n and 21-1, 21-2,. This shows the situation where the two are facing each other.
On the first semiconductor chip 11 side, I / O lines 12-1, 12-2,..., 12-n (typically 12-m in FIG. 5) are formed on the semiconductor substrate. On the chip 21 side, two I / O lines (13SW1 and 13SW2 in FIG. 2) are formed on the semiconductor substrate in the stacking direction, and the TMR element is formed between these two lines (13SW1 and 13SW2). MR2 is formed.

Protective layers 12g and 13g are respectively provided on the surfaces of the I / O line (12-m) of the first semiconductor chip 11 and the I / O line (13SW1) of the second semiconductor chip 21 facing each other. Is formed.
FIG. 5B is an enlarged view for explaining the structure of the TMR element portion of FIG. The illustrated two metal magnetic layers, that is, a structure in which a free layer FL and a pinned layer PL are laminated via an insulating layer BL, and the pinned layer PL is a magnetic body in which magnetic domains are fixed in a certain direction. The free layer FL is a magnetic body that can easily change the magnetic domain direction by an external magnetic field.

In FIG. 5A, an upward solid arrow indicates an I / O on the first semiconductor chip 11 side when data “0” is transmitted from the first semiconductor chip 11 side to the second semiconductor chip 21 side. The direction of the drive current flowing through the O line (12-m) is shown.
When the drive current flows in the upward direction as shown by the solid line arrow, the data represents “0”, and a magnetic field is generated by this drive current (indicated by the solid line in the arc shape), The TMR element (MR2) on the second semiconductor chip 21 side senses the generated magnetic field, and the magnetic domain of the free layer FL of the TMR element (MR2) is directed according to the magnetic field.

  Assuming that the drive current is assumed as shown by the solid arrow in the above, the magnetic domain of the pinned layer PL of the TMR element and the magnetic domain of the free layer FL are in a parallel state in the same direction, and therefore between the two lines 13SW1 and 13SW2. The resistance value is lowered. Data “0” can be detected by measuring the resistance value Ra between two lines (conductors) 13Sw1 and 13Sw2, which is a circuit for detecting the resistance value of the magnetoresistive element MR2, with a sense amplifier or the like.

On the other hand, in FIG. 5A, a downward broken arrow indicates that the data “1” is transmitted from the first semiconductor chip 11 side to the second semiconductor chip 21 side. The direction of the drive current flowing through the I / O line (12-m) is shown.
When the drive current flows in the downward direction as shown by the broken arrow, the data represents “1”, and a magnetic field is generated by the drive current (indicated by the broken line in the arc). The TMR element (MR2) on the second semiconductor chip 21 side senses the generated magnetic field, and the magnetic domain of the free layer FL of the TMR element (MR2) is directed according to the magnetic field.
In the case where the drive current is assumed as shown by the broken arrow in the above line, the magnetic domain of the pinned layer PL of the TMR element and the magnetic domain of the free layer FL are in an antiparallel state in opposite directions, and thus between the two lines 13SW1 and 13SW2. The resistance value of becomes high. Data “1” can be detected by measuring the resistance value Rb between two lines (conductors) 13Sw1 and 13Sw2, which is a circuit for detecting the resistance value of the magnetoresistive element MR2, with a sense amplifier or the like.
In the above, Rb> Ra is always satisfied due to the characteristics of the TMR element.

FIG. 6 shows a magnetic field generating element section and resistance value detection in a case where signals (data) can be exchanged bidirectionally between the first semiconductor chip 11 and the second semiconductor chip 21 as in FIG. It is the figure which looked at the part containing the vicinity of an element part from the cross-sectional direction.
In FIG. 6, the corresponding parts to those in FIGS. 3 to 5 described above are denoted by the same reference numerals, and description thereof will be omitted. With this configuration, the first semiconductor chip 11 and the second semiconductor are provided. Signals (data) can be transmitted and received between the chips 21. In FIG. 3, for the sake of convenience, the driving current corresponding to the signal on the transmitting side is shown as flowing through a conductor far from the other party. However, considering the conversion efficiency, the other side is used to flow the driving current. It is preferable to use the line (13PW1, 13SW1) closer to

As described above, in the electronic circuit device according to the embodiment of the present invention described with reference to the drawings, the first circuit module (110) and the second circuit module (120) exchange data between them. Since the interface circuit unit (130) includes the magnetoresistive element (MR2), the interface circuit unit (130) is configured to exchange data using the magnetoresistive effect of the magnetoresistive element. In addition, since it can be configured without including non-contact and relatively small coils and other elements that hinder downsizing, downsizing can be achieved as a whole, and power can be saved.
In addition, a change in the resistance value generated in the magnetoresistive element (MR2) due to the magnetic field generated in the magnetic field generating element part (13Pa) that is a conducting wire for passing a drive current is a resistance value detecting element part (13S-) including this magnetoresistive element. m), and a signal (digital data) is transmitted in a non-contact manner from the front-stage circuit module to the rear-stage circuit module.

In one embodiment, the interface circuit unit 130 generates a drive current generation signal conversion circuit that generates a drive current for causing the magnetic resistance element (MR2) to act on a magnetic field that changes according to digital data to be transmitted. A magnetic field generating element section that is driven by the magnetic field generating element section, and a resistance value detecting element section that includes the magnetoresistive element and a conductor section for detecting a resistance value of the magnetoresistive element. Since multiple transmission / reception systems are provided, signals (digital data) are transmitted from the front-side circuit module to the rear-side circuit module through a signal (digital data) transmission path such as plurals configured to include these multiple element pairs. Can be transmitted in parallel and non-contact, and high-speed data exchange can be performed between both circuit modules.

FIG. 7 is a conceptual diagram showing various embodiments in the electronic circuit device of the present invention in which a plurality of circuit modules are coupled by an interface unit.
FIG. 7A shows the memory 121 via the interface circuit unit 130 symbolized by a white arrow on the semiconductor module SCM mainly composed of the microprocessor 111 as the first circuit module 110. The semiconductor module MDM is coupled as the second circuit module 120 configured as a main body (not limited to a case where the corresponding two are joined in a physically fixed relationship, but is set in a state where information can be exchanged. The same applies to the following.

FIG. 7B shows an analog IC via the interface circuit unit 130 symbolized by a white arrow on the semiconductor module SCM mainly composed of the microprocessor 111 as the first circuit module 110. This is an example in which a semiconductor module ADM as the second circuit module 120 configured mainly is coupled.
FIG. 7C shows the memory 121 via the interface circuit section 130 symbolized by a white arrow on the semiconductor module SCM mainly composed of the microprocessor 111 as the first circuit module 110. As the second circuit module 120 configured mainly by the semiconductor module MDM, an ASIC (Application Specific Integrated Circuit) ASIC that can be configured to include an analog circuit is coupled.

As described above, in the example described with reference to FIG. 7, efficient signal (digital data) transmission can be performed between circuit modules.
Next, the characteristics of signal (data) transmission (transfer or information coupling) using the magnetoresistive element in the embodiment of the present invention will be added.
Conventionally, data communication between chips has been performed with the coils facing each other (the above-mentioned Patent Document 1 or the like), but a magnetoresistive element is used on the receiving side. Magnetoresistive elements, currently called GMR and TMR, are used particularly in hard disk drives. Note that CPP-GMR may be applied to the present invention.

The GMR has a structure in which a metal soft magnetic material, a good conductor, and a metal hard magnetic material are arranged in the surface direction of the substrate, and causes a resistance change with respect to an external magnetic field in the surface direction.
The TMR has a structure in which a metal soft magnetic material, an insulator, and a metal hard magnetic material are stacked in a direction perpendicular to the substrate, and causes a resistance change with respect to an external magnetic field in the stacking direction.
Since these magnetoresistive elements cause a resistance change of 20 to 200% with respect to an external magnetic field, the resistance change is detected by a sense amplifier and converted into a digital signal to be received data.

In this case, inverting amplification by an operational amplifier or the like can be used as a simple configuration as the sense amplifier.
In particular, these magnetoresistive elements are characterized by being able to detect a very small magnetic field, and it is possible to reduce the value of the current flowing through the coil on the transmission side. It is also possible to increase the communication distance. Furthermore, the form of the conductor through which the drive current flows in order to generate the magnetic field may be a straight wiring conductor instead of a swivel coil depending on the conditions, which enables the coil pattern to be miniaturized. Become.

  Although the data communication between IC bare chips has been described above, the present invention is not limited to this example, and a circuit module may be mounted on a substrate such as a PCB. Furthermore, only the magnetoresistive element can be independently formed on a substrate, and such a substrate can be mounted on an IC bare chip or a PCB for use.

The following effects are obtained by the embodiment of the present invention. That is,
(A) The element area formed in the communication part between IC bare chips can be reduced in size.
(B) Further downsizing enables further parallelization of data communication and further high speed communication.
(C) Since the GMR element, the TMR element, and the like have high magnetic sensitivity, it is possible to reduce the power consumption on the transmission side and to increase the distance between communications.

It is a figure showing the electronic circuit apparatus as embodiment of this invention. It is a figure showing the structure of the signal conversion circuit and interface part applied when transferring data to one direction in embodiment of this invention. It is a figure showing the structure of the signal converter circuit and interface part which are applied when transferring data bidirectionally in the embodiment of the present invention. It is a figure showing embodiment of this invention comprised including two semiconductor chips and the interface circuit part formed between these semiconductor chips. It is a figure showing a mode that embodiment of FIG. 4 was seen from the cross-sectional direction. It is a figure showing a mode that the part containing the vicinity of the magnetic field generation element part and resistance value detection element part in embodiment of this invention was seen from the cross-sectional direction. It is a figure showing various embodiments in an electronic circuit device of the present invention which combined a plurality of circuit modules with an interface part.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Electronic circuit apparatus 11 ... 1st semiconductor chip 12-1 to 12-n ... I / O line 13P, 13P-1 to 13P-n ... Magnetic field generating element part 13Pw ... Magnetic field generating element part 13PW1, 13PW2 ... Conductor 13S , 13S-1 to 13Sn... Resistance value detection element units 13SW1, 13SW2... I / O line 21... Second semiconductor chip 21-1 to 21-n... I / O line 110. Microprocessors 112, 112-1 to 112-n ... Drive current generation signal conversion circuit 114 ... Switching control circuit 120 ... Second circuit module 121 ... Memory 122, 122-1 to 122-n ... Resistance value detection signal conversion Circuit 122a... Sense amplifier 124... Switching control circuit 130, 131-1 to 131-n. 41 ... Resistance value detection signal conversion circuit 141a ... Sense amplifiers COC1, COC2 ... Input / output switching control circuits MR1, MR2, MR2-1 to MR2-n ... Magnetoresistive elements

Claims (13)

  An electronic circuit device comprising: a first circuit module; a second circuit module; and an interface circuit unit that exchanges data between the first circuit module and the second circuit module, wherein the interface circuit unit Includes an magnetoresistive element, and is configured to exchange data using the magnetoresistive effect of the magnetoresistive element.   The first circuit module includes a drive current generation signal conversion circuit that generates a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element of the interface circuit unit. The electronic circuit device according to claim 1, wherein:   The second circuit module detects a change in resistance value in the magnetoresistive element of the interface circuit unit that changes due to a magnetic field corresponding to digital data transmitted from the first circuit module. The electronic circuit device according to claim 1, comprising:   The interface circuit unit is driven by a drive current generation signal conversion circuit that generates a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element, and generates a magnetic field. 2. An electron according to claim 1, comprising: a magnetoresistive element; and a resistance value detecting element portion including a conductor portion for detecting a resistance value of the magnetoresistive element. Circuit device.   The interface circuit unit is driven by a drive current generation signal conversion circuit that generates a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the magnetoresistive element, and generates a magnetic field. And a plurality of transmission / reception systems including element pairs of the magnetoresistive element and a resistance value detecting element unit having a conductor part for detecting a resistance value of the magnetoresistive element. The electronic circuit device according to claim 4.   5. The magnetic field generating element unit is configured integrally with the first circuit module, and the resistance value detecting element unit is configured integrally with the second circuit module. The electronic circuit device according to 1.   The first circuit module generates a drive current generation signal conversion circuit for generating a drive current for causing a magnetic field that changes according to digital data to be transmitted to act on the second magnetoresistive element of the interface circuit unit. And a first resistance value detection signal conversion circuit that detects a change in resistance value of the first magnetoresistive element of the interface circuit unit that changes due to a magnetic field corresponding to digital data transmitted from the second circuit module. And the second circuit module generates a driving current for causing a magnetic field that changes according to digital data to be transmitted to act on the first magnetoresistive element of the interface circuit unit. It changes depending on the magnetic field corresponding to the digital data transmitted from the signal conversion circuit for generating current and the first circuit module. 2. The electronic circuit according to claim 1, further comprising: a second resistance value detection signal conversion circuit configured to detect a change in resistance value of the second magnetoresistive element of the interface circuit unit. apparatus. The interface circuit unit includes a first magnetic field generating element unit that is driven by the first drive current generating signal conversion circuit to generate a magnetic field, the second magnetoresistive element, and the second magnetoresistive element. A first element pair with a first resistance value detecting element part having a conductor part or the like for detecting a resistance value, and a second element that is driven by the second drive current generating signal conversion circuit to generate a magnetic field. A second element pair of the first magnetic resistance element and a second resistance value detecting element portion having a conductor portion for detecting the resistance value of the first magnetoresistive element and the first magnetoresistive element. The electronic circuit device according to claim 7, comprising a plurality of transmission / reception systems configured to include both element pairs.   9. The electronic circuit device according to claim 1, wherein the magnetoresistive element is any one of TMR, GMR, and CPP-GMR.   The electronic circuit device according to claim 1, wherein the first circuit module is a microprocessor.   The electronic circuit device according to claim 1, wherein the second circuit module is a memory.   9. The electronic circuit device according to claim 1, wherein the second circuit module is an ASIC. The electronic circuit device according to claim 1, wherein the second circuit module is an analog IC.

Images