JP2008058763A - Method of manufacturing wavelength converting element, and transfer die - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a wavelength converting element in which polarization inversion crystal having a uniform periodic structure is easily formed to mass-produce the wavelength converting element with high wavelength conversion efficiency, and to provide a transfer die used to manufacture the wavelength converting element. <P>SOLUTION: The method of manufacturing the wavelength converting element comprises: an insulating layer forming stage of forming a resist layer 25 as an insulating layer on a lithium niobate (LN) substrate 24 as optical crystal; a pattern transfer stage of transferring a pattern of the transfer die provided with the pattern to the resist layer 25; and a voltage application stage of applying a voltage between a first electrode 26 disposed on the LN substrate 24 on the side where the resist layer 25 is formed and a second electrode 27 disposed on the opposite side from the side where the resist layer 25 is formed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a wavelength conversion element manufacturing method and a transfer mold, and more particularly to a technique of a wavelength conversion element manufacturing method having a periodic polarization inversion structure.

2. Description of the Related Art Conventionally, wavelength conversion elements such as second-harmonic generation (SHG) elements are used in laser light sources that supply laser light. By using the wavelength conversion element, for example, it is possible to supply laser light having a desired wavelength using a general-purpose laser that can be easily obtained. In order to enable wavelength conversion with high efficiency, a wavelength conversion device using quasi phase matching (QPM) has been conventionally developed. For the QPM wavelength conversion device, for example, a polarization inversion crystal (Periodically Poled Lithium Niobate: PPLN) of lithium niobate (LiNbO ₃ ) can be used. As a technique for manufacturing the QPM wavelength conversion device, for example, there is one proposed in Patent Document 1.

Japanese National Patent Publication No. 10-503602

  The domain-inverted structure can be created by forming a fine pattern of an insulator on a crystal substrate and applying a high voltage to the substrate. In the conventional technique, a photolithography technique such as exposure of a photoresist through a photomask is used to form an insulator pattern. In order to realize high wavelength conversion efficiency, it is desirable that the periodic structure of the domain-inverted crystal is uniform. In order to create a domain-inverted crystal having a uniform periodic structure, it is necessary to appropriately design the cross-sectional shape of the insulator and to form the insulator with high accuracy. However, when an insulator pattern is formed by photolithography technology, it becomes difficult to form the insulator with high accuracy as the cross-sectional shape becomes complicated. In order to mass-produce a domain-inverted crystal, it is required that an insulator having a desired cross-sectional shape can be easily produced. The difficulty in producing a domain-inverted crystal having a uniform periodic structure is a problem in mass-producing wavelength conversion elements with high wavelength conversion efficiency. The present invention has been made in view of the above-mentioned problems, and can easily produce a polarization-inverted crystal having a uniform periodic structure, and a method for manufacturing a wavelength conversion element for mass-producing wavelength conversion elements with high wavelength conversion efficiency And a transfer mold used for manufacturing the wavelength conversion element.

  In order to solve the above-described problems and achieve the object, according to the present invention, an insulating layer forming step for forming an insulating layer on an optical crystal, and a pattern for transferring a transfer-type pattern provided with the pattern to the insulating layer A voltage is applied between the transfer step, the first electrode disposed on the side where the insulating layer is formed with respect to the optical crystal, and the second electrode disposed on the side opposite to the side where the insulating layer is formed. And a voltage applying step. The method for manufacturing a wavelength conversion element can be provided.

  The transfer pattern is transferred by pressing the transfer mold against the insulating layer. By using the transfer mold, the insulating layer can be easily patterned as compared with the case of using a photolithography technique. Further, the pattern formed on the insulating layer can be easily changed according to the shape of the transfer mold. When the transfer mold is used, a pattern having a complicated cross-sectional shape and a pattern having a high aspect ratio (height to width ratio) can be formed with high accuracy and ease. As a result, a domain-inverted crystal having a uniform periodic structure can be easily produced, and a wavelength conversion element with high wavelength conversion efficiency can be mass-produced.

  Moreover, as a preferable aspect of the present invention, it is desirable that the transfer mold has a convex portion constituting a pattern, and the cross section of the convex portion has a rectangular shape. Thus, a periodic domain-inverted structure can be created using a transfer mold that can be easily formed.

  Moreover, as a preferable aspect of the present invention, it is desirable that the transfer mold has a convex portion constituting a pattern, and a cross section of the convex portion has a corrugated shape. Thereby, the position where the electric field is concentrated on the optical crystal can be appropriately adjusted, and a domain-inverted crystal having a uniform periodic structure can be created.

  Moreover, as a preferable aspect of the present invention, it is desirable that the transfer mold has a convex portion constituting a pattern, and a cross section of the convex portion has a step shape. Thereby, the location which concentrates an electric field can be increased. By increasing the number of places where the electric field is concentrated and improving the nuclear density of the domain-inverted nuclei, domain-inverted crystals having a uniform periodic structure can be produced.

  Moreover, as a preferable aspect of the present invention, it is desirable that the transfer mold has a convex portion constituting the pattern, and the convex portion includes a plurality of concave portions formed at the tip end portion of the convex portion. Thereby, the location which concentrates an electric field can be increased. By increasing the number of places where the electric field is concentrated and improving the nuclear density of the domain-inverted nuclei, domain-inverted crystals having a uniform periodic structure can be produced.

  As a preferred embodiment of the present invention, the transfer mold is formed through a resist layer forming step for forming a resist layer on the substrate, a patterning step for patterning the resist layer, and an etching step for etching the resist layer and the substrate. It is desirable that Thereby, a transfer mold for transferring a pattern having a desired shape can be obtained.

  As a preferred embodiment of the present invention, it is desirable to expose the resist layer by gray scale lithography in the patterning step. Thereby, a transfer mold for transferring a pattern having a desired shape can be obtained.

  Moreover, as a preferable aspect of the present invention, the transfer mold is formed through an electroformed layer forming step for forming an electroformed layer on the mother die and a peeling step for peeling the mother die from the electroformed layer. Is desirable. Thereby, a transfer mold for transferring a pattern having a desired shape can be obtained.

  Moreover, as a preferable aspect of the present invention, the transfer mold has a convex portion constituting the pattern and a groove portion formed between the convex portions, and the width of the convex portion is equal to or less than the width of the groove portion. desirable. A portion of the insulating layer corresponding to the transfer-type convex portion is removed by patterning. By appropriately determining the width of the transfer-type convex portion, the width of the domain-inverted region where the polarization state is inverted from the spontaneous polarization of the optical crystal can be adjusted. By making the width of the transfer-type convex part equal to or less than the width of the groove part, the width of the domain-inverted region and the width of the non-inverted region of the optical crystal that remains spontaneously polarized can be adjusted to be substantially the same.

  Moreover, as a preferable aspect of the present invention, it is desirable that the width of the convex portion occupies 20 to 50% with respect to the combined width of the convex portion and the concave portion. Thereby, the width of the domain-inverted region and the width of the non-inverted region can be adjusted to be substantially the same.

  Moreover, as a preferable aspect of the present invention, it is desirable to include an insulating layer shaping step for shaping the insulating layer to which the pattern has been transferred by the pattern transfer step. A domain-inverted crystal having a uniform periodic structure can be created by appropriately adjusting the shape of the convex portions constituting the pattern.

  As a preferred embodiment of the present invention, it is desirable to heat the insulating layer in the insulating layer shaping step. Thereby, an insulating layer can be shape | molded suitably.

  As a preferred embodiment of the present invention, it is desirable to etch the insulating layer in the insulating layer shaping step. In the insulating layer shaping step, for example, anisotropic etching in which etching proceeds in the thickness direction of the insulating layer can be performed. By this anisotropic etching, the thickness of the insulating layer can be adjusted. Further, the optical crystal can be completely exposed in the recess formed in the pattern transfer process. By completely exposing the optical crystal, it is possible to reduce the voltage applied in the voltage application step.

  Furthermore, according to the present invention, it is possible to provide a transfer mold that is used in the above-described method for manufacturing a wavelength conversion element. By using such a transfer mold, a domain-inverted crystal having a uniform periodic structure can be easily produced, and a wavelength conversion element with high wavelength conversion efficiency can be mass-produced.

  Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows an SHG element 10 manufactured by a method for manufacturing a wavelength conversion element according to an embodiment of the present invention. The SHG element 10 is, for example, PPLN. The SHG element 10 includes a polarization inversion structure 11 periodically arranged in parallel. The polarization inversion structure 11 is configured by inverting the sign of the nonlinear optical constant d for each coherent length l _C. The SHG element 10 converts the laser beam L1 incident on the SHG element 10 into a laser beam L2 having a half wavelength and emits it.

  2 to 4 illustrate a procedure for manufacturing the SHG element 10 by the method for manufacturing a wavelength conversion element according to this embodiment. Steps 1 a to 1 d shown in FIG. 2 show a procedure for manufacturing a transfer mold used for manufacturing the SHG element 10. In the resist layer forming step shown in step 1a, a resist layer 21 is formed on the substrate 20. The substrate 20 is, for example, a silicon wafer. In step 1b, the resist layer 21 is exposed through the mask 22. Then, by removing the exposed portion of the resist layer 21, the resist layer 21 is patterned as shown in step 1c. Steps 1 b and 1 c are patterning steps for patterning the resist layer 21.

  Next, in the etching step shown in step 1d, the resist layer 21 and the substrate 20 are etched. For etching the resist layer 21 and the substrate 20, anisotropic dry etching can be used. Thereby, the pattern of the resist layer 21 is transferred to the substrate 20. By transferring the pattern of the resist layer 21 onto the substrate 20, a transfer mold 23 provided with a predetermined pattern is obtained. As the substrate 20, a glass member or a quartz member may be used in addition to a silicon wafer.

  Steps 1e to 1i shown in FIGS. 3 and 4 show a procedure for manufacturing the SHG element 10 using the transfer mold 23 formed by the steps 1a to 1d. In step 1e, a resist layer 25 is formed on a lithium niobate (LN) substrate 24 that is an optical crystal. The resist layer 25 is an insulating layer for the purpose of insulation between conductors, and is made of an insulator. The resist layer 25 can be formed, for example, by depositing a resin such as an organic photoresist as an insulator to a thickness of about 10 μm. The resin film can be formed by spin coating. Step 1e is an insulating layer forming step for forming an insulating layer on the optical crystal.

  Next, in the pattern transfer step shown in steps 1f and 1g, the pattern of the transfer mold 23 is transferred to the resist layer 25. The pattern of the transfer mold 23 is transferred by pressing the side of the transfer mold 23 on which the pattern is formed against the resist layer 25. It is desirable to press the transfer mold 23 against the resist layer 25 by maintaining a precise pressure. Thereby, as shown in step 1g, a patterned resist layer 25 is obtained.

  Step 1h is a voltage application step of applying a voltage between the first electrode 26 and the second electrode 27 arranged with the configuration shown in the step 1g interposed therebetween. The first electrode 26 is disposed on the side where the resist layer 25 is formed with respect to the LN substrate 24. The second electrode 27 is disposed on the opposite side of the LN substrate 24 from the side on which the resist layer 25 is formed. The first electrode 26 and the second electrode 27 are fixed to the LN substrate 24 by an O-ring 29 disposed along the outer edge of the LN substrate 24. The space surrounded by the first electrode 26, the LN substrate 24, the resist layer 25, and the O-ring 29 is filled with the liquid electrode 19. Similarly, the liquid electrode 19 is filled in the space surrounded by the second electrode 27, the LN substrate 24, and the O-ring 29. As the liquid electrode 19, a conductive liquid, for example, a LiCl aqueous solution can be used.

  The power source 28 applies a voltage between the first electrode 26 and the second electrode 27. The voltage is applied by applying a high voltage pulse. By applying the voltage, the domain-inverted region gradually grows from the position where the resist layer 25 is removed. The polarization inversion region is a region where the polarization state is inverted from the spontaneous polarization of the LN substrate 24. Then, when the non-inversion region of the spontaneous polarization of the LN substrate 24 and the polarization inversion region have substantially the same width, the application of voltage is stopped. In this way, as shown in Step 1i, the PPLN substrate 30 having the periodic domain-inverted structure 11 is obtained. Furthermore, the SHG element 10 is completed through dicing the PPLN substrate 30 to a desired size, polishing, forming an optical film, and the like.

  FIG. 5 illustrates the pattern of the transfer mold 23 and the polarization inversion structure 11. The transfer mold 23 has convex portions 31 constituting a pattern. The convex portion 31 is formed with the direction perpendicular to the cross section shown in the drawing as the longitudinal direction. The convex portions 31 are provided at a predetermined interval. A groove portion 32 is formed between the convex portions 31. In the cross-sectional configuration shown in FIG. 5, the convex portion 31 of the transfer mold 23 has a rectangular shape. The cross section shown in FIG. 5 is a cross section orthogonal to the longitudinal direction of the convex portion 31.

  By pressing the convex portion 31 of the transfer mold 23, a groove portion 33 having a rectangular cross section is formed in the resist layer 25. Further, a convex portion 34 having a rectangular cross section is formed between the groove portions 33. The transfer mold 23 used in this embodiment can be easily formed by the procedure described with reference to FIG. Thereby, a periodic domain-inverted structure can be created using the transfer mold 23 that can be easily formed.

  When the groove portion 33 of the resist layer 25 is formed by pressing the convex portion 31 of the transfer mold 23, the width d3 of the groove portion 33 of the resist layer 25 is slightly larger than the width d1 of the convex portion 31 of the transfer mold 23. Further, by applying a voltage, the domain-inverted region of the LN substrate 24 extends from the position of the groove portion 33 of the resist layer 25 in the thickness direction of the LN substrate 24 and in the lateral direction perpendicular to the thickness direction. Therefore, the width d5 of the domain-inverted region of the PPLN substrate 30 is larger than the width d3 of the groove 33 of the resist layer 25. The width d6 of the non-inversion region of the PPLN substrate 30 is smaller than the width d4 of the convex portion 34 of the resist layer 25.

  By appropriately determining the width d1 of the convex portion 31 of the transfer mold 23, the width d5 of the domain-inverted region formed in the PPLN substrate 30 can be adjusted. In order to make the width d5 of the domain-inverted region and the width d6 of the non-inverted region of the PPLN substrate 30 substantially the same, the width d1 of the convex portion 31 of the transfer mold 23 needs to be equal to or smaller than the width d2 of the groove portion 32. Preferably, it is desirable that the width d1 of the convex portion 31 occupies 20 to 50% of the combined width (d1 + d2) of the convex portion 31 and the groove portion 32 of the transfer mold 23. As a result, the width d5 of the domain-inverted region and the width d6 of the non-inverted region of the PPLN substrate 30 can be adjusted to be substantially the same.

By using the transfer mold 23, the resist layer 25 can be easily patterned as compared with the case of using a photolithography technique. As a result, it is possible to easily create a domain-inverted crystal having a uniform periodic structure, and to produce mass-produced wavelength conversion elements with high wavelength conversion efficiency. The LN substrate 24, which is an optical crystal, is suitable for a QPM wavelength conversion device because of its large nonlinear optical constant. As the optical crystal, an optical crystal other than the LN substrate 24, for example, a lithium tantalate (LiTaO ₃ : LT) substrate may be used.

  The transfer mold is not limited to the one having the convex portion 31 having a rectangular cross section. The shape of the transfer mold may be changed as appropriate. For example, the convex portion 41 of the transfer mold 40 shown in FIG. 6 has a waveform shape in the cross section. In the resist layer 25, a groove portion 42 having a shape obtained by inverting the waveform of the convex portion 41 is formed. Compared with the case where the groove portion 33 (see FIG. 5) having a rectangular shape is formed, when the groove portion 42 having a waveform is formed, the position where the electric field concentrates on the LN substrate 24 is close to the center of the groove portion 42. Position. Thus, the position where the electric field is concentrated in the groove 42 can be adjusted according to the shape of the convex portion formed in the transfer mold. By appropriately adjusting the position where the electric field is concentrated, a domain-inverted crystal having a uniform periodic structure can be created.

  The convex portion 44 of the transfer mold 43 shown in FIG. 7 has a step shape in cross section. In the lower part of the figure, the upper surface configuration of the resist layer 25 to which the pattern has been transferred is shown. The cross section of the resist layer 25 shown in the upper part in the drawing is an AA cross section in the upper surface configuration in the lower part in the drawing. A concave portion 45 having a rectangular cross section is formed at the tip of the convex portion 44 of the transfer mold 43. In the groove portion 46 formed in the resist layer 25, a convex portion 47 to which the shape of the concave portion 45 of the transfer mold 43 is transferred is formed. As shown in the plan configuration at the bottom in the figure, the convex portions 47 are formed in parallel in the longitudinal direction of the groove portions 46.

  Compared with the case where the above-described groove portion 33 (see FIG. 5) having a rectangular shape is formed, when the groove portion 46 having a step shape is formed, it is possible to increase the number of locations where the electric field is concentrated on the LN substrate 24. . By increasing the number of places where the electric field is concentrated and improving the nuclear density of the domain-inverted nuclei, it is possible to create domain-inverted crystals having a uniform periodic structure. The step shape formed on the transfer mold 43 is not limited to that shown in FIG. For example, you may form a convex part further in the front-end | tip part of the convex part which comprises a pattern.

  The convex portion 51 of the transfer mold 50 shown in FIG. 8 includes a plurality of concave portions 52. The plurality of recesses 52 are formed at the tip of the protrusion 51. The plurality of recesses 52 are provided in parallel in the cross section shown in the upper part of the figure. The number of the recesses 52 arranged in parallel in the protrusions 51 is not limited to the four shown in the figure, and may be plural. In the cross section, each recess 52 has substantially the same rectangular shape.

  In the groove 53 formed in the resist layer 25, a plurality of structures 54 to which the rectangular shape of the recess 52 of the transfer mold 50 is transferred are formed. In the cross section, each structure 54 has substantially the same rectangular shape. As shown in the lower plane configuration in the figure, the structures 54 are formed in parallel in two orthogonal directions. When the groove 53 having the plurality of structures 54 is formed, it is possible to increase the number of places where the electric field is concentrated, compared to the case where the groove 46 (see FIG. 7) having a step shape is formed. This makes it possible to create a domain-inverted crystal having a more uniform periodic structure.

  The concave portion formed in the convex portion of the transfer mold is not limited to a rectangular shape. For example, the recess 56 of the transfer mold 55 shown in FIG. 9 has a triangular shape in cross section. In the groove 53 formed in the resist layer 25, a plurality of structures 57 to which the triangular shape of the recess 56 of the transfer mold 55 is transferred are formed. Also in this case, a domain-inverted crystal having a uniform periodic structure can be produced.

  The recess 62 of the transfer mold 60 shown in FIG. 10 has a waveform shape in cross section. In the groove portion 53 formed in the resist layer 25, a plurality of structures 64 to which the waveform shape of the concave portion 62 of the transfer mold 60 is transferred are formed. Also in this case, a domain-inverted crystal having a uniform periodic structure can be produced. In addition, the shape of the recessed part formed in the transcription | transfer convex part is not restricted to what is shown in FIGS. 8-10, It can deform | transform suitably. As described above, the pattern formed on the resist layer 25 can be easily changed according to the shape of the transfer mold. When the transfer mold is used, a pattern having a complicated cross-sectional shape can be formed accurately and easily. In particular, when a transfer mold is constituted by a silicon member, a pattern having a high aspect ratio, for example, an aspect ratio of 1 or more can be formed accurately and easily.

  In the method for manufacturing a wavelength conversion element according to this embodiment, the resist layer 25 may be shaped by an insulating layer shaping step. In the insulating layer shaping step, the resist layer 25 to which the pattern has been transferred by the pattern transfer step is shaped. FIG. 11 shows a case where the resist layer 25 is heated in the insulating layer shaping step. By baking the resist layer 25, the corners of the projections 34 can be rounded. Thus, by appropriately shaping the resist layer 25, a domain-inverted crystal having a uniform periodic structure can be created.

  FIG. 12 illustrates a case where the resist layer 25 is etched in the insulating layer shaping step. Here, a case where anisotropic etching (etchback) in which etching proceeds in the thickness direction of the resist layer 25 will be described. The thickness of the resist layer 25 can be adjusted by anisotropic etching. For example, in the pattern transfer process, the convex portion 34 slightly higher than a desired height may be formed, and the height of the convex portion 34 may be adjusted by performing anisotropic etching.

  Thus, by appropriately shaping the resist layer 25 by etching, a domain-inverted crystal having a uniform periodic structure can be created. Further, by performing anisotropic etching, the LN substrate 24 can be completely exposed in the groove portion 33 of the resist layer 25. By completely exposing the LN substrate 24, it is possible to reduce the voltage applied in the voltage application process.

  The transfer mold is not limited to the case of manufacturing according to the procedure shown in FIG. As shown in FIG. 13, a transfer mold may be manufactured by an electroformed layer forming step. In step 2a, the mother die 70 is formed. The mother die 70 can be made of glass or silicon, for example. In the electroformed layer forming step shown in step 2 b, the electroformed layer 71 is formed on the mother die 70. The electroformed layer 71 can be formed, for example, by applying electric field plating with nickel or the like. Next, in the peeling step shown in step 2c, the mother die 70 is peeled from the electroformed layer 71. The electroformed layer 71 obtained by such a procedure can be used as a transfer mold. Electroforming is characterized by being able to faithfully transfer irregularities on the order of submicrons. Thereby, the shape of the mother die 70 can be accurately transferred and a transfer die having an accurate shape can be manufactured.

  FIG. 14 illustrates a procedure for manufacturing a transfer mold using gray scale lithography. In the resist layer forming step shown in step 3a, a resist layer 81 is formed on the substrate 80. In step 3b, the resist layer 81 is exposed through the gray scale mask 82. In step 3b, the resist layer 81 is exposed by gray scale lithography using the gray scale mask 82. The gray scale mask 82 is a mask in which the light transmittance is changed corresponding to a desired shape, and for example, a HEBS mask can be used.

  By removing the exposed portion of the resist layer 81 in accordance with the exposure amount, the resist layer 81 is patterned as shown in step 3c. Steps 3 b and 3 c are patterning steps for patterning the resist layer 81. In the etching step shown in step 3d, the resist layer 81 and the substrate 80 are etched. By transferring the pattern of the resist layer 81 to the substrate 80, a transfer mold 83 is obtained.

  By using the gray scale mask 82 in which the amount of transmitted light is appropriately set, a transfer mold 83 having a desired shape can be obtained. Instead of the gray scale mask 82, an area gradation mask in which a chrome mask has a fine aperture area distribution may be used. Further, in addition to exposure through a mask, a desired shape may be obtained by exposure using an electron beam or laser beam whose intensity is modulated. The SHG element 10 manufactured according to the present embodiment can be applied to, for example, a laser light source of a projector that displays an image using laser light, laser processing, optical communication technology using laser light, and the like.

  As described above, the method for manufacturing a wavelength conversion element according to the present invention is suitable for manufacturing a wavelength conversion element having a periodic polarization inversion structure.

The figure of the SHG element manufactured with the manufacturing method of the wavelength conversion element which concerns on an Example. The figure explaining the procedure which manufactures a SHG element. The figure explaining the procedure which manufactures a SHG element. The figure explaining the procedure which manufactures a SHG element. The figure explaining a transcription | transfer type pattern and a polarization inversion structure. The figure explaining a transfer type | mold provided with the convex part which has a waveform shape. The figure explaining a transfer type | mold provided with the convex part which has a step shape. The figure explaining the case where the transfer type | mold which has a some recessed part is used. The figure explaining a transfer type | mold provided with the recessed part which has triangular shape. The figure explaining a transfer type | mold provided with the recessed part which has a waveform shape. The figure explaining shaping of the resist layer by heating. The figure explaining shaping of the resist layer by anisotropic etching. The figure explaining the procedure which manufactures a transfer type | mold by an electroformed layer formation process. The figure explaining the procedure using gray scale lithography.

Explanation of symbols

  10 SHG element, 11 polarization inversion structure, 20 substrate, 21 resist layer, 22 mask, 23 transfer type, 24 LN substrate, 25 resist layer, 26 first electrode, 27 second electrode, 28 power supply, 29 O-ring, 30 PPLN Substrate, 31 convex portion, 32 groove portion, 33 groove portion, 34 convex portion, 40 transfer mold, 41 convex portion, 42 groove portion, 43 transfer mold, 44 convex portion, 45 concave portion, 46 groove portion, 47 convex portion, 50 transfer mold, 51 Convex part, 52 concave part, 53 groove part, 54 structure, 55 transfer mold, 56 concave part, 60 transfer mold, 62 concave part, 64 structure, 70 matrix, 71 electroformed layer, 80 substrate, 81 resist layer, 82 gray scale Mask, 83 Transfer type

Claims (14)

An insulating layer forming step of forming an insulating layer on the optical crystal;
A pattern transfer step of transferring the pattern of the transfer mold provided with a pattern to the insulating layer;
A voltage is applied between the first electrode disposed on the side on which the insulating layer is formed with respect to the optical crystal and the second electrode disposed on the side opposite to the side on which the insulating layer is formed. And a voltage applying step. A method of manufacturing a wavelength conversion element, comprising:   2. The method of manufacturing a wavelength conversion element according to claim 1, wherein the transfer mold has a convex portion constituting the pattern, and a cross section of the convex portion has a rectangular shape.   2. The method of manufacturing a wavelength conversion element according to claim 1, wherein the transfer mold has a convex portion constituting the pattern, and a cross section of the convex portion has a waveform shape.   2. The method of manufacturing a wavelength conversion element according to claim 1, wherein the transfer mold has a convex portion constituting the pattern, and a cross section of the convex portion has a step shape. The transfer mold has a convex portion constituting the pattern,
The said convex part is equipped with the several recessed part formed in the front-end | tip part of the said convex part, The manufacturing method of the wavelength conversion element of Claim 4 characterized by the above-mentioned. The transfer mold is
A resist layer forming step of forming a resist layer on the substrate;
A patterning step of patterning the resist layer;
The method of manufacturing a wavelength conversion element according to claim 1, wherein the wavelength conversion element is formed through an etching step of etching the resist layer and the substrate.   The method for manufacturing a wavelength conversion element according to claim 6, wherein in the patterning step, the resist layer is exposed by gray scale lithography. The transfer mold is
An electroformed layer forming step of forming an electroformed layer on the matrix;
The method for producing a wavelength conversion element according to any one of claims 1 to 5, wherein the method is formed through a peeling step of peeling the matrix from the electroformed layer.   The transfer mold includes a convex portion constituting the pattern and a groove portion formed between the convex portions, and a width of the convex portion is equal to or less than a width of the groove portion. The manufacturing method of the wavelength conversion element as described in any one of 1-8.   The method for manufacturing a wavelength conversion element according to claim 9, wherein the width of the convex portion occupies 20 to 50% with respect to the combined width of the convex portion and the groove portion.   The method for manufacturing a wavelength conversion element according to claim 1, further comprising an insulating layer shaping step for shaping the insulating layer to which the pattern has been transferred by the pattern transfer step.   The method for manufacturing a wavelength conversion element according to claim 11, wherein the insulating layer is heated in the insulating layer shaping step.   13. The method for manufacturing a wavelength conversion element according to claim 11, wherein the insulating layer is etched in the insulating layer shaping step.   A transfer mold that is used in the method for manufacturing a wavelength conversion element according to claim 1.

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