JP2008056971A - High pressure circulated cooled target chamber - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high pressure circulated cooled target chamber which can provide good cooling effect. <P>SOLUTION: A circulated cooled target includes: a first target chamber which has, at its center, a hole part having a first foil layer and a second foil layer at two opposite ends, and a flow channel being connected with a liquid inlet and a gas inlet; a second target chamber which is disposed on a surface of the first target chamber, and has a communicating chamber having a rim being set with a concave and an outlet connecting to the communicating chamber on the outside surface; and a carrier element which is disposed in the communicating chamber and has a store part at an end surface and a concave part having a gap. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a high-pressure surrounding cooling target chamber, and more particularly to a target chamber capable of obtaining a better cooling effect.

In general, for example, the conventional one is "Semiconductor element manufacturing sputtering apparatus and sputtering method using the apparatus" which is, for example, the publication of the Chinese Patent Gazette No. 533478, and the sputtering apparatus performs sputtering processing on a wafer. There is a processing chamber, a target electrode mounted on the upper surface of the processing chamber and leaving a predetermined distance from the wafer, a target electrode below, a cooling gas pipe is contained, and the cooling gas for the cooling target electrode is the cooling gas A back plate that circulates in the pipe and a cooling gas supply component that is a cooling gas pipe that supplies and circulates a cooling gas to the back plate are contained.

    In the sputtering method of the sputtering apparatus, a) a wafer is mounted on a susceptor in a processing chamber of the sputtering apparatus, and b) a high frequency power of 15 kW to 45 kW is applied to a target electrode mounted on the wafer, On the other hand, the reaction gas is supplied at 3 SCCM to 10 SCCM, the pressure in the sputtering apparatus is maintained at 0.1 mTorr to 1 mTorr, and the target electrode material is sputtered on the wafer to deposit the target electrode material on the wafer. Therefore, it is a sputtering method capable of rapid deposition with excellent step coating.

The above-mentioned conventional “sputtering apparatus for manufacturing semiconductor elements and sputtering method using the apparatus” is a sputtering method capable of excellent step coating and rapid deposition, but the cooling effect that can be achieved by the cooling gas pipe in the entire structure is poor. The target material does not endure the high temperature generated by irradiating the proton beam, and the target material cannot be irradiated with the proton beam in the “sputtering apparatus for manufacturing a semiconductor element and the sputtering method using the apparatus”.
Republic of China Patent Publication No. 533478

The main object of the present invention is to inject the cooling liquid and gas required by the liquid input part and the gas input part into the first chamber and surround it with the recessed part of the mounting unit, and then the output part of the second chamber. The target chamber is provided with a better cooling effect by flowing out of the air.

According to the first aspect of the present invention, there is a through-hole portion in which the first and second thin film layers are provided at the center and both end surfaces, respectively, and the flow is provided around the periphery of the through-hole portion on one surface of the first chamber. A first chamber in which a liquid input unit and a gas input unit communicating with the channel unit are installed on the periphery of the first chamber, and a channel unit of the first chamber; A second chamber having a storage portion at the center, a recess at an appropriate position at an edge of the storage portion, and an output portion communicating with the storage portion at a peripheral edge; A mounting unit which is installed in the storage part of the chamber 2 and has a leaving section on one end face, and a recessed part is provided in a ring, and a chip is formed at an appropriate position on one side of the recessed part; A high-pressure surrounding cooling target chain, characterized in that It is.

The invention according to claim 2 is characterized in that the first and second chambers have a plurality of corresponding fixing holes, and are coupled by being locked in accordance with the fixing elements through the fixing holes. An enclosure cooling target chamber.

According to a third aspect of the present invention, the second chamber is composed of a disk-shaped body and an extending portion installed on one end face of the disk-shaped body, and the disk-shaped body and the extending portion are communicated with each other by the storage section. 2. The high-pressure surrounding cooling target chamber according to claim 1, wherein a recessed opening at an edge of the storage portion is installed in the disc-like body, and an output portion is installed at the periphery of the extending portion.

A fourth aspect of the present invention is the high-pressure surrounding cooling target chamber according to the first aspect, wherein a pipe is connected to the output portion of the second chamber.

1, 2, and 3 are a three-dimensional appearance conceptual diagram of the present invention, a three-dimensional exploded conceptual diagram of the present invention, and a three-dimensional exploded conceptual diagram of another angle of the present invention, respectively. As shown in the figure, the present invention is a high-pressure surrounding cooling target chamber, which is composed of at least a first chamber 1, a second chamber 2, and a mounting unit 3, and supplies the required cooling liquid and gas to the first chamber. It is injected into the chamber 1 and flows out from the second chamber 2 via the mounting unit 3 by the surrounding flow, and thereby a better cooling effect is obtained for the target chamber.

The first chamber 1 has a through-hole portion 13 in which the first and second thin film layers 11 and 12 are provided at the center and both end surfaces, respectively, and the peripheral edge of the through-hole portion 13 on one surface of the first chamber 1. The liquid input section 15 and the gas input section 16 that communicate with the flow path section 14 are installed on the periphery of the first chamber 1, respectively. The chamber 1 has a plurality of corresponding fixing holes 17.

The second chamber 2 is composed of a disc-like body 21 and an extending portion 22 installed on one end face of the disc-like body 21, and the disc-like body 21 of the second chamber 2 is composed of the first chamber. The plate-like body 21 has a fixing hole 211 corresponding to the fixing holes 17 of the plurality of first chambers 1, and the fixing holes 17 and 211 corresponding to each other. The second chamber 2 can be locked and coupled in accordance with the fixed element (not shown in the figure), and the second chamber 2 has a storage portion 23 for communicating the plate-like body 21 and the extending portion 22 at the center. There is a recess 24 formed in the disc-like body 21 at an appropriate position at the edge of the storage part 23, and in the storage part 23 at the periphery of the extending part 22 of the second chamber 2. There is an output unit 25 that communicates, and a pipe 26 is connected to the output unit 25 It is.

The mounting unit 3 is installed in the storage portion 23 of the second chamber 2, and a leaving section 31 is provided on one end surface of the mounting unit 3, and a recess 32 is provided in the mounting unit 3. The chip 33 is formed at an appropriate position on one side of the recess 32. With the above structure, a new high-pressure surrounding cooling target chamber is configured.

    4 and 5 are a use state conceptual diagram of the present invention and a use state sectional conceptual view of the present invention, respectively. In the present invention, as shown in the figure, a vacuum chamber 4 is connected to one side of the first chamber 1, and the required target material 5 is left in the leaving zone 31 of the mounting unit 3, and the first chamber 1 When a proton beam is irradiated from one side of the chamber 1 and at the same time, water and helium are injected and operated by the liquid input portion 15 and the gas input portion 16 of the first chamber 1, one end surface of the through-hole portion 13 is operated. The first thin film layer 11 is hermetically sealed, and the second thin film layer 12 prevents liquid isotopes from leaking when the target material 5 reacts. Also, the liquid input unit 15 and the gas input unit After the water and helium are injected into 16, the water and helium flow into the recessed portion 32 of the mounting unit 3 through the flow path portion 14 of the first chamber 1, and the water and helium are collected in the recessed portion 32. After enclosing, it flows out from the output section 25 of the second chamber 2, Further, the pipe 26 on the output unit 25 guides the outflowed water and helium to a position where the water and helium are required. Therefore, the mounting unit 3 is surrounded by water and helium, so that an effective cooling effect can be obtained. .

    As described above, the high-pressure surrounding cooling target chamber according to the present invention can effectively improve each of the conventional disadvantages, and the cooling liquid and gas required by the liquid input part and the gas input part are injected into the first chamber. In addition, by surrounding with the recessed portion of the mounting unit and flowing out from the output portion of the second chamber, a better cooling effect can be obtained by the target chamber, so that the present invention is more progressive and It is more practical, and claims are filed according to law.

    The above are merely preferred embodiments of the present invention, and the present invention is not limited thereby, and all equivalent changes and modifications made based on the scope of the claims and the specification relating to the present invention are all described. Are included within the scope of the claims relating to the present invention.

Three-dimensional appearance conceptual diagram of the present invention Three-dimensional decomposition conceptual diagram of the present invention Another angle stereo decomposition conceptual diagram of the present invention Usage state conceptual diagram of the present invention Use state sectional conceptual diagram of the present invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st chamber 11 1st thin film layer 12 2nd thin film layer 13 Through-hole part 14 Channel part 15 Liquid input part 16 Gas input part 17 Fixing hole 2 2nd chamber 21 Disc-shaped body 211 Fixing hole 22 Extension Part 23 storage part 24 concave part 25 output part 26 pipe 3 mounting unit 31 leaving section 32 concave part 33 chip part 4 vacuum chamber 5 target material

Claims (4)

There are through-hole portions in which the first and second thin film layers are provided at the center and both end surfaces, respectively, and there is a flow passage portion provided around the periphery of the through-hole portion on one surface of the first chamber, A first chamber in which a liquid input unit and a gas input unit communicating with the flow path unit are installed at the periphery of the first chamber;
An output unit that is installed on one surface having the flow path part of the first chamber, has a storage part at the center, has a concave opening at an appropriate position at the edge of the storage part, and communicates with the storage part at the periphery. A second chamber with
Mounted in the storage portion of the second chamber, having a leaving section on one end surface, and provided with a recessed portion, and a notch is formed at an appropriate position on one side of the recessed portion. Unit,
Contains,
A high pressure surrounding cooling target chamber characterized by that. 2. The high-pressure surrounding cooling target chamber according to claim 1, wherein the first and second chambers have a plurality of corresponding fixing holes, and are fixedly coupled to the fixing elements through the fixing holes. The second chamber is composed of a disk-shaped body and an extending portion installed on one side end surface of the disk-shaped body, and the disk-shaped body and the extending portion are communicated with each other by the storage portion. The high-pressure surrounding cooling target chamber according to claim 1, wherein the opening is installed in the plate-like body, and the output unit is installed at the periphery of the extending unit. The high-pressure surrounding cooling target chamber according to claim 1, wherein a pipe is connected to the output portion of the second chamber.