JP2008053543A - Laminated chip component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laminated chip component that is advantageous in increasing the number of elements to be formed inside even in chip reduction, and can excellently obtain performance as a functional element. <P>SOLUTION: A chip 1 is formed by laminating insulating films (a) of ceramic material and conductor patterns (b) in an appropriate order. In insulating films a1 to a10, no conductor pattern is formed in upper and lower outer-most layers a1, a10 but conductor patterns (b) are formed from inside insulating film layer a2 to insulating film layer a9, respectively, and they are defined as capacitance elements and inductance elements and connected mutually to provide a configuration of a low-pass filter. Inductance elements (b22, b32) are formed on the same plane as electrodes b21, b31 of the capacitance elements in the insulating film layers a2, a3, and connected in series to provide a serial resonance circuit. In the insulating film layers a4, a5, inductance elements on the same plane as the capacitance elements are also similarly connected in series to provide a serial resonance circuit but paired film layers are overlapped oppositely and set so as not to overlap portions of the inductance elements. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a multilayer chip component. More specifically, a chip body formed by laminating an insulating film of a ceramic material and a conductor pattern in an appropriate order has an arrangement configuration of a conductor pattern that forms a capacitive element and an inductive element. Regarding improvement.

  As is well known, an electronic component called a chip component has been reduced in size to a small piece by eliminating the lead terminal for use in surface mounting, and the electrode formed on the surface of the chip body is directly brought into contact with the substrate surface. It will be soldered. As a chip component, a chip body is formed by laminating an insulating film of a ceramic material and a conductor pattern in an appropriate order, and an electrode body with a conductor pattern is built in the chip body. Although it may be configured as a single functional element such as an inductor (inductive element), for example, as seen in Patent Documents 1 and 2, etc., a low-pass filter or the like by appropriately incorporating a capacitive element and an inductive element in the chip body It has been configured to.

  FIG. 1 is an example of a conventional multilayer chip component, and is a perspective view showing each layer separately. 2 is an equivalent circuit diagram for explaining the electrical configuration of the multilayer chip component shown in FIG.

  This multilayer chip component has a configuration in which a capacitive element and an inductive element are built in the chip body 1 and operates as a low-pass filter by their mutual connection. The chip body 1 has eight insulating films a1 to a8, and no conductor pattern is formed on the upper and lower outermost layers a1 and a8, but the second insulating film layer a2 to the seventh insulating film layer a7. Each conductor pattern b is formed.

  On the insulating film layer a2, a conductor pattern b21 serving as an electrode of the capacitive element C2 is formed in a rectangular shape, and the conductor pattern b21 reaches the edge on the output electrode side at one end. On the insulating film layer a3, a conductor pattern b31 serving as the electrodes of the capacitive elements C1 and C2 is formed in a rectangular shape in the center, and the conductor pattern b31 reaches the edge on the side of the side ground electrode. On the insulating film layer a4, a conductor pattern b41 serving as the electrodes of the capacitive elements C0 and C1 is formed in a rectangular shape, and the conductor pattern b41 reaches the other edge of the input electrode side. On the insulating film layer a5, a conductor pattern b51 to be an electrode of the capacitive element C0 is formed in a rectangular shape, and the conductor pattern b51 reaches the edge on the output electrode side at one end. On the insulating film layer a6, a conductor pattern b61 serving as a coil portion of the inductive element L0 is formed. The conductor pattern b61 is drawn in a substantially J shape from the edge on the input electrode side of the other end, and the tip is formed by the conductor to form the upper layer a7. The conductor pattern b71 is connected. That is, on the insulating film layer a7, the conductor pattern b71 that becomes the coil portion of the induction element L0 is formed, and the conductor pattern b71 is drawn in an approximately L shape from the edge on the output electrode side of one end, and the tip is formed by the conductor. The conductor pattern b61 of the lower layer a6 is connected.

The low-pass filter inside the chip body 1 has a π-type configuration as shown in FIG. 2, and a capacitive element C0 and an inductive element L0 are connected in parallel between the input and output, and capacitive elements are provided on the input side and the output side, respectively. C1 and C2 are connected, and the other ends of these capacitive elements C1 and C2 are drawn to the ground electrode and grounded.
JP 7-336176 A JP-A-11-103229

  In recent years, as electronic devices such as mobile phones become thinner, lighter, and more functional, there is a high demand for miniaturization, higher performance, and higher frequency with respect to the electronic components that constitute the electronic devices. In other words, we would like to advance the miniaturization of multilayer chip parts, but even in that case, if the performance as a functional element deteriorates, it becomes a problem that it cannot be used as a circuit element. High performance is strongly demanded.

  In the example of the low-pass filter shown in FIGS. 1 and 2 described above, the attenuation is about 15 dB in the configuration of eight insulating film layers, and this is about 20 dB. Therefore, in order to obtain a large attenuation, the filter circuit needs to have a multi-stage configuration. However, since the number of elements formed in the multi-stage circuit increases, the chip size inevitably increases. It is a conflicting problem.

  SUMMARY OF THE INVENTION The present invention solves the above-described problems, and an object of the present invention is to provide a multilayer chip component that can increase the number of elements formed therein even in the miniaturization of the chip and can obtain good performance as a functional element. It is to provide.

  In order to achieve the above-described object, a multilayer chip component according to the present invention forms a chip body by laminating an insulating film of a ceramic material and a conductor pattern in an appropriate order, and a film that forms at least a capacitive element for the chip body. And a film layer that forms an inductive element, and is formed in a form in which a conductor pattern is routed in the vicinity of a conductor pattern that serves as an electrode of a capacitive element, and the routed conductor pattern includes two films that serve as electrodes of the capacitive element A pair of film layers forming a series resonant circuit by connecting each of the layers and connecting between the layers to form one of the inductive elements, connecting the inductive element and the capacitive element in the same film layer in series to form a series resonant circuit Is provided with two sets, which are configured to overlap each other in the opposite direction so that the inductive element portions do not overlap.

  In addition, the conductor pattern serving as the electrode of the capacitor element is preferably formed in a convex shape having a stepwise narrow width in the longitudinal direction, and two opposing patterns are overlapped in the opposite direction. Further, the capacitive element and the inductive element in the chip body may be connected to each other as a low-pass filter.

  Therefore, in the present invention, the routing conductor pattern formed in the vicinity of the conductor pattern serving as the electrode of the capacitive element functions as an inductive element because it is connected between the layers, and the inductive element and the capacitive element in the same film layer are connected in series. Therefore, the resonance point can be adjusted. That is, these lead conductor patterns can be appropriately changed in length and can be arbitrarily formed. Therefore, the inductance value of the inductive element can be appropriately set, and the resonance point in the attenuation characteristic can be easily adjusted.

  Further, the pair of film layers forming the series resonance circuit are set so that two sets are stacked in opposite directions so that the portion of the inductive element does not overlap. For this reason, since the magnetic flux is not interlinked and interference is eliminated, the frequency characteristics can be kept good.

  In this case, since the induction element is formed in the same plane as the electrode of the capacitive element, the number of elements formed inside can be increased without increasing the number of stacked layers of the chip body.

  In the multilayer chip component according to the present invention, the induction element is formed in the same plane as the electrode of the capacitive element, and both are formed as a series resonance circuit. Therefore, the number of elements formed inside the chip body is increased without increasing the number of layers. The resonance point can be adjusted. For example, in the case of a low-pass filter configuration, the resonance point in the attenuation characteristic can be adjusted, and the attenuation characteristic can be easily adjusted.

  Therefore, it is advantageous to increase the number of elements formed inside even in a small chip, and the additionally formed elements can be used for adjustment for improving characteristics. As a result, the performance as a functional element can be favorably obtained.

  Furthermore, since the pair of film layers forming the series resonance circuit are set so that two sets are overlapped in opposite directions so that the part of the inductive element does not overlap, the magnetic flux is not interlinked and the interference is eliminated, so that the frequency characteristics are kept good. be able to.

  FIG. 3 shows a preferred embodiment of the present invention. In this embodiment, the multilayer chip component forms a chip body 1 by laminating an insulating film a made of a ceramic material and a conductor pattern b in an appropriate order, and forms at least a film layer and an inductive element that form a capacitive element for the chip body 1. A film layer is provided, and a low-pass filter is configured by interconnecting these elements.

  As shown in FIG. 4, the chip body 1 is formed in a substantially rectangular small piece. The input electrode 2 and the output electrode 3 are provided on the two opposing surfaces of the chip body 1, and the ground electrode 4 is provided on the side surface. The structure which provides 5 is taken. As shown in FIG. 5, the low-pass filter inside the chip body 1 basically has a π-type configuration, and a capacitive element C0 and an inductive element L0 are connected in parallel between the input and output. The inductive element L1 and the capacitive element C1 are connected in series, the other end of the capacitive element C1 is drawn to the ground electrode 4 and grounded, and the inductive element L2 and the capacitive element C2 are connected in series on the output side, and the capacitive element C2 The other end of each is pulled out to the ground electrode 5 and grounded.

  The chip body 1 is formed by printing the insulating paste made of a ceramic material and the conductor paste made of a conductor material alternately by a screen printing method, and the paste has a thickness when printed (applied) once. For example, it becomes 3 to 5 μm, and this is applied, dried and stacked. In the manufacture of chip parts, a workpiece laminate having a plurality of sizes is manufactured as a workpiece from the viewpoint of productivity, and the workpiece laminate is sufficiently dried and then cut into individual pieces and fired.

  As the ceramic material, for example, dielectric ceramics added with glass and sintered at a low temperature is used. For example, a dielectric material in which a borosilicate glass is mixed with alumina in a volume ratio of 70:30 is used, and a mixture of a mixture of ethyl cellulose, terpineol, a dispersant, and a plasticizer is mixed and kneaded as a vehicle. It can be used as an insulation paste. In addition, for example, magnetic ceramics such as ferrite may be used as the ceramic material.

  A silver paste is used as the conductor paste and is mixed with the vehicle described above. The conductor paste may be silver palladium.

  Specifically, the insulating film a has 10 layers from a1 to a10 shown in FIG. 3, and no conductive pattern is formed on the upper and lower outermost layers a1 and a10, but the second insulating film layer a2 to the ninth insulating film. A conductor pattern b is formed for each film layer a9.

  On the insulating film layer a2, a conductor pattern b21 to be an electrode of the capacitive element C2 is formed in a substantially square shape on the input electrode 2 side, and a lead conductor pattern b22 is formed. The lead conductor pattern b22 is a corner portion of the conductor pattern b21. The leading end is connected to the conductor pattern b32 of the upper layer a3 by a conductor. That is, on the insulating film layer a3, the lead conductor pattern b32 that becomes the coil portion of the induction element L2 is formed, and the lead conductor pattern b32 is spirally drawn from the edge on the output electrode 3 side, and the tip is lower layer a2 by the conductor. The conductor pattern b22 is connected. On the insulating film layer a3, a conductor pattern b31 to be an electrode of the capacitive element C2 is formed in a substantially square shape on the input electrode 2 side, and the conductor pattern b31 has projecting portions on both sides, and the ground electrodes 4 and 5 respectively. Reached the side edge. Thereby, in the laminated portion of the insulating film layer a2 and the insulating film layer a3, the inductive element L2 and the capacitive element C2 are connected in series to form a series resonance circuit.

  The same conductive patterns b41 and b42 as the insulating film layer a3 are formed in the reverse direction on the insulating film layer a4, and the same conductive patterns b51 and b52 as the insulating film layer a2 are also set in the reverse direction on the insulating film layer a5. In the laminated portion of the insulating film layers a4 and a5, the inductive element L1 and the capacitive element C1 are connected in series to form a series resonance circuit.

  That is, on the insulating film layer a4, the routing conductor pattern b42 that becomes the coil portion of the inductive element L1 is formed. The routing conductor pattern b42 is spirally drawn from the edge on the input electrode 2 side, and the tip is formed by the conductor to the upper layer a5. The conductor pattern b52 is connected. On the insulating film layer a4, a conductor pattern b41 to be an electrode of the capacitive element C1 is formed in a substantially square shape on the output electrode 3 side. The conductor pattern b41 has projecting portions on both sides, and the ground electrodes 4 and 5 respectively. Reached the side edge. On the other hand, on the insulating film layer a5, a conductor pattern b51 serving as an electrode of the capacitive element C1 is formed in a substantially square shape on the output electrode 3 side, and a lead conductor pattern b52 is formed. The lead conductor pattern b52 is formed of the conductor pattern b51. The end is connected to the conductor pattern b42 of the lower layer a4 by a conductor with a leading end drawn in a substantially J shape from the corner.

  On the insulating film layer a6, a conductor pattern b61 serving as a coil portion of the induction element L0 is formed. The conductor pattern b61 is drawn in a substantially J shape from the edge on the input electrode 2 side, and the tip is a conductor of the upper layer a7 by a conductor. It is connected to the pattern b71. That is, on the insulating film layer a7, the conductor pattern b71 that becomes the coil portion of the induction element L0 is formed, and the conductor pattern b71 is drawn in an approximately L shape from the edge on the output electrode 3 side, and the leading end thereof is the lower layer a6 by the conductor. The conductor pattern b61 is connected.

  On the insulating film layer a8, a conductor pattern b81 serving as an electrode of the capacitive element C0 is formed at the center. The conductor pattern b81 is formed in a convex shape whose width is narrowed stepwise in the longitudinal direction, and the narrow top reaches the edge on the output electrode 3 side.

  On the insulating film layer a9, a conductor pattern b91 serving as an electrode of the capacitive element C0 is formed in the center, and this is set to overlap with the conductor pattern b81 of the lower layer a8 in the opposite direction. That is, the conductor pattern b91 is formed in a convex shape whose width is narrowed stepwise in the longitudinal direction, but the narrow top reaches the edge on the input electrode 2 side.

  As shown in FIGS. 6A and 6C, the lead conductor pattern b22 on the insulating film layer a2 and the lead conductor pattern b32 on the insulating film layer a3 are formed of the conductor patterns b21 and b31 serving as the electrodes of the capacitive element C2. Since it is formed in the vicinity and connected between the layers, it functions as the induction element L2. Then, the lead conductor pattern b22 is connected to the conductor pattern b21, the inductive element L2 is in series with the capacitive element C2, and a series resonance circuit is formed, so that the resonance point can be adjusted. That is, the lengths of the lead conductor patterns b22 and b32 can be appropriately changed and can be arbitrarily formed. Therefore, the inductance value of the induction element L2 can be set as appropriate, and the resonance point in the attenuation characteristic can be easily adjusted.

  The same applies to the lead conductor pattern b42 on the insulating film layer a4 and the lead conductor pattern b52 on the insulating film layer a5. These function as the inductive element L1 and form a series resonance circuit with the capacitive element C1, thereby The resonance point in the damping characteristic can be adjusted.

  Further, the two sets of the film layers a2 and a3 and the film layers a4 and a5 forming the series resonance circuit overlap in opposite directions, and the portions of the inductive elements L2 and L1 are set not to overlap, so that the magnetic flux is linked. Since no interference occurs, the frequency characteristics can be kept good.

  The electrode of the capacitive element C0 is formed in a convex shape having a stepwise narrow width in the longitudinal direction, and is opposed to the conductor pattern b81 (FIG. 7A) and the conductor pattern b91 (FIG. 7B). Since they are set to overlap each other in the opposite direction (FIG. 7 (c)), when the overlapping area is viewed, even if there is a positional deviation between them, the influence is unlikely to appear. In other words, the conductive pattern b81 and the conductive pattern b91 have a central portion that is opposed and overlapped as an effective region as an electrode, and the staircase portions on both sides of the effective region are margins for the amount of displacement, so that the positional relationship between the conductive pattern b81 and the conductive pattern b91 is shifted. Even if there is a gap, the area corresponding to the effective area in the center is maintained until the deviation amount reaches the width of the staircase portion. Accordingly, even if there is a positional deviation in the formation or lamination of the conductor pattern, the influence between the electrodes of the capacitive element C0 is reduced, and the capacitance value can be ensured appropriately. As a result, the resonance characteristics can be prevented from varying in the attenuation characteristics, and the frequency characteristics can be obtained stably.

  When the numerical analysis was performed on the configuration of the low-pass filter according to the present invention, that is, the equivalent circuit shown in FIG. 5, attenuation characteristics as shown in FIG. 8 were obtained. FIG. 8 also plots attenuation characteristics in the equivalent circuit of the conventional example shown in FIG. As can be seen from the figure, the low pass filter configuration of the conventional example can obtain only about 15 dB of attenuation, but the low pass filter configuration of the present invention can obtain about 28 dB, and the frequency characteristics can be obtained satisfactorily. It was confirmed that

  Thus, the two sets of the pair of film layers a2 and a3 and the film layers a4 and a5 form the inductive element L on the same plane as the electrode of the capacitive element C, and both form a series resonance circuit, so that the chip The number of elements formed inside the body 1 can be increased without increasing the number of stacked layers, and the resonance point can be adjusted. This is because the resonance point in the attenuation characteristic can be adjusted in the configuration of the low-pass filter, and the attenuation characteristic can be easily adjusted.

  Therefore, it is advantageous to increase the number of elements formed inside even in a small chip, and the additionally formed element can be used for adjustment for improving characteristics, and as a result, the performance as a functional element is improved. Obtainable.

FIG. 6 is a perspective view illustrating a conventional multilayer chip component, with each layer separated. FIG. 2 is an equivalent circuit diagram illustrating an electrical configuration of the multilayer chip component shown in FIG. 1. FIG. 2 is a perspective view showing an embodiment of the multilayer chip component according to the present invention, with each layer separated. It is a perspective view explaining the external appearance of the multilayer chip component shown in FIG. FIG. 4 is an equivalent circuit diagram illustrating an electrical configuration of the multilayer chip component shown in FIG. 3. It is a top view explaining a conductor pattern, (a) has shown the 2nd layer and (b) has shown the 3rd layer, respectively. It is a top view explaining a conductor pattern, (a) shows a 9th layer, (b) shows an 8th layer, respectively, (c) has shown the state which laminated | stacked the 9th layer on the 8th layer. It is a graph which shows the attenuation | damping characteristic of the multilayer chip component which makes a low-pass filter.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Chip body 2 Input electrode 3 Output electrode 4, 5 Ground electrode a Insulating film a1 1st insulating film layer a2 2nd insulating film layer a3 3rd insulating film layer a4 4th insulating film layer a5 5th insulation Film layer a6 6th insulating film layer a7 7th insulating film layer a8 8th insulating film layer a9 9th insulating film layer a10 10th insulating film layer b Conductor patterns b21, b22, b31, b32, b41, b42, b51, b52, b61, b71, b81, b91 Conductor patterns C0, C1, C2 Capacitance elements L0, L1, L2 Inductive elements

Claims (3)

A chip body is formed by laminating an insulating film of a ceramic material and a conductor pattern in an appropriate order, and a laminated chip component having at least a film layer forming a capacitive element and a film layer forming an inductive element for the chip body,
A conductor pattern is formed in the vicinity of the conductor pattern serving as the electrode of the capacitor element, and the lead conductor pattern is provided on each of the two film layers serving as the electrode of the capacitor element and connected between the layers. As one of the elements, the inductive element and the capacitive element in the same film layer are connected in series to form a series resonance circuit, and the pair of film layers forming the series resonance circuit are provided in two sets and are opposite to each other. Overlap The laminated chip component, wherein the inductive element portion is set not to overlap.   The conductive pattern serving as an electrode of the capacitive element is formed in a convex shape having a stepwise narrow width in the longitudinal direction, and two opposing patterns are set to overlap in opposite directions. The laminated chip component as described. 3. The multilayer chip component according to claim 1, wherein the capacitor element and the inductive element in the chip body are connected to each other as a low-pass filter.

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