JP2008047645A - Etching liquid and etching method of transparent electrode - Google Patents
Etching liquid and etching method of transparent electrode Download PDFInfo
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- JP2008047645A JP2008047645A JP2006220377A JP2006220377A JP2008047645A JP 2008047645 A JP2008047645 A JP 2008047645A JP 2006220377 A JP2006220377 A JP 2006220377A JP 2006220377 A JP2006220377 A JP 2006220377A JP 2008047645 A JP2008047645 A JP 2008047645A
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Abstract
Description
本発明はエッチング用組成物に関する。更に詳しくは、フラットパネルディスプレー等に使用される透明電極を選択的にエッチングできる組成物に関するものである。 The present invention relates to an etching composition. More specifically, the present invention relates to a composition capable of selectively etching a transparent electrode used for a flat panel display or the like.
透明電極はフラットパネルディスプレー等の製造に欠かせないものである。この透明電極として、ＩＴＯ（インジウム、スズ酸化物）膜、ＩＺＯ（インジウム、亜鉛酸化物）膜等の透明導電膜が広く使用されている。これらのＩＴＯ膜、ＩＺＯ膜は非常に高価であるため、新しい透明電極が種々提案されている。それらの中でも、ＺＡＯ（アルミニウム酸化物添加亜鉛酸化物）膜は抵抗が低く、注目されている透明電極である。 Transparent electrodes are indispensable for manufacturing flat panel displays and the like. As the transparent electrode, a transparent conductive film such as an ITO (indium, tin oxide) film or an IZO (indium, zinc oxide) film is widely used. Since these ITO films and IZO films are very expensive, various new transparent electrodes have been proposed. Among them, a ZAO (aluminum oxide-added zinc oxide) film has a low resistance and is a transparent electrode that has attracted attention.
上記透明電極は、例えば、透明導電膜上に、フォトレジストを塗布し、露光、現像後、フォトレジストをマスクとしてエッチング剤を用いてエッチング後、残存するフォトレジストを剥離して形成される。 The transparent electrode is formed, for example, by applying a photoresist on a transparent conductive film, exposing and developing, etching using a photoresist as a mask, and then etching off the remaining photoresist.
しかしながら、このようなエッチング剤としては、ＩＴＯ膜やＩＺＯ膜等のエッチング液は種々提案されているものの（例えば、特許文献１、特許文献２参照）、ＺＡＯ膜のエッチング液については工業的に有効なものが知られていなかった。 However, various etchants such as ITO films and IZO films have been proposed as such etchants (see, for example, Patent Document 1 and Patent Document 2), but ZAO film etchants are industrially effective. Nothing was known.
本発明は上記の課題に鑑みてなされたものであり、その目的は、ＺＡＯ膜をエッチングすることのできる組成物を提供することにある。 This invention is made | formed in view of said subject, The objective is to provide the composition which can etch a ZAO film | membrane.
本発明者らは、ＺＡＯ膜のエッチングについて鋭意検討した結果、クエン酸及び／又はクエン酸塩を含有するエッチング用組成物が、ＺＡＯをエッチングできることを見出し、本発明を完成させるに至った。 As a result of intensive studies on etching of the ZAO film, the present inventors have found that an etching composition containing citric acid and / or citrate can etch ZAO, and have completed the present invention.
すなわち本発明は、以下に示すとおりの透明電極のエッチング液及びエッチング方法である。 That is, this invention is the etching liquid and etching method of a transparent electrode as shown below.
［１］亜鉛酸化物及びアルミニウム酸化物を主成分とする透明電極をエッチングする際に使用するエッチング組成物であって、クエン酸及び／又はクエン酸塩を含有する水溶液からなるエッチング用組成物。 [1] An etching composition for use in etching a transparent electrode mainly composed of zinc oxide and aluminum oxide, the etching composition comprising an aqueous solution containing citric acid and / or citrate.
［２］クエン酸塩が、クエン酸のアンモニウム塩、及び／又はクエン酸のアミン塩であることを特徴とする上記［１］に記載のエッチング用組成物。 [2] The etching composition as described in [1] above, wherein the citrate is an ammonium salt of citric acid and / or an amine salt of citric acid.
［３］エッチング用組成物中のクエン酸及び／又はクエン酸塩の濃度が、０．０１〜１０重量％の範囲であることを特徴とする上記［１］又は［２］に記載のエッチング用組成物。 [3] The etching composition as described in [1] or [2] above, wherein the concentration of citric acid and / or citrate in the etching composition is in the range of 0.01 to 10% by weight. Composition.
［４］透明電極が、ＺＡＯ（アルミニウム酸化物添加亜鉛酸化物）膜であることを特徴とする上記［１］乃至［３］のいずれかに記載のエッチング用組成物。 [4] The etching composition according to any one of [1] to [3], wherein the transparent electrode is a ZAO (aluminum oxide-added zinc oxide) film.
［５］エッチング液として、上記［１］乃至［４］のいずれかに記載のエッチング用組成物を使用することを特徴とする透明電極のエッチング方法。 [5] A method for etching a transparent electrode, wherein the etching composition according to any one of [1] to [4] is used as an etching solution.
本発明のレジスト除去用組成物では、ＺＡＯ膜を容易にエッチングできるため、ＺＡＯを透明電極にしたフラットパネルディスプレーを簡便に製造することが可能になる。 Since the ZAO film can be easily etched in the resist removing composition of the present invention, a flat panel display using ZAO as a transparent electrode can be easily produced.
以下に本発明をさらに詳細に説明する。 The present invention is described in further detail below.
本発明のエッチング用組成物の必須成分は、クエン酸、クエン酸塩である。クエン酸、クエン酸塩は、それぞれ単独で使用しても良いし、混合して使用しても良い。クエン酸とクエン酸塩を併用すると、ｐＨ変動が小さく、しかもフラットパネルディスプレーを構成する他の材料にダメージのないエッチング液とすることができる。 Essential components of the etching composition of the present invention are citric acid and citrate. Citric acid and citrate may be used alone or in combination. When citric acid and citrate are used in combination, it is possible to obtain an etching solution that has a small pH fluctuation and that does not damage other materials constituting the flat panel display.
本発明のエッチング用組成物は、クエン酸、クエン酸塩を必須成分とするが、使用するクエン酸（塩）には特に制限はなく、一般に流通しているクエン酸（塩）を使用できる。クエン酸（塩）には電子材料に適した、金属分の少ないグレードがあるが、本発明においては、これを使用することが好ましい。 The etching composition of the present invention contains citric acid and citrate as essential components, but citric acid (salt) to be used is not particularly limited, and generally available citric acid (salt) can be used. Citric acid (salt) has a low metal content grade suitable for electronic materials, but it is preferable to use this in the present invention.
本発明のエッチング用組成物において、クエン酸塩としては、例えば、クエン酸三アンモニウム、クエン酸水素二アンモニウム、クエン酸二水素アンモニウム等のクエン酸のアンモニウム塩、クエン酸のアミン塩を使用することができる。 In the etching composition of the present invention, as the citrate, for example, an ammonium salt of citric acid such as triammonium citrate, diammonium hydrogen citrate, or ammonium dihydrogen citrate, or an amine salt of citric acid should be used. Can do.
本発明のエッチング用組成物は、クエン酸及び／又はクエン酸塩を水溶液として使用する。有機溶媒にクエン酸／クエン酸塩を溶解しても、使用できないことは無いが引火性が生じるという問題があるし、エッチング液の廃棄に処理が必要になる。 The etching composition of the present invention uses citric acid and / or citrate as an aqueous solution. Even if citric acid / citrate is dissolved in an organic solvent, there is no problem that it cannot be used, but there is a problem that flammability occurs, and treatment for disposal of the etching solution is required.
本発明のエッチング用組成物のクエン酸／クエン酸塩の濃度は、特に限定するものではないが、通常０．０１〜１０重量％の範囲、特に好ましくは０．０１〜５重量％の範囲である。０．０１重量％未満では、エッチング速度が実用的でないほど遅くなる場合があり、１０重量％以上では、エッチング速度の向上は小さくなる場合がある。 The concentration of citric acid / citrate in the etching composition of the present invention is not particularly limited, but is usually in the range of 0.01 to 10% by weight, particularly preferably in the range of 0.01 to 5% by weight. is there. If it is less than 0.01% by weight, the etching rate may be so slow that it is not practical, and if it is 10% by weight or more, the improvement in the etching rate may be small.
本発明のエッチング用組成物には、燐酸、硝酸を添加することができる。燐酸、硝酸を添加すると、エッチング速度、他材料との選択性を改善することができる。 Phosphoric acid and nitric acid can be added to the etching composition of the present invention. Addition of phosphoric acid and nitric acid can improve the etching rate and selectivity with other materials.
本発明のエッチング用組成物は、フラットパネルディスプレーの製造で使用される透明電極、中でもＺＡＯ（アルミニウム酸化物を添加した亜鉛酸化物）のエッチングにおいて優れた性能を発揮する。 The etching composition of the present invention exhibits excellent performance in the etching of transparent electrodes used in the manufacture of flat panel displays, particularly ZAO (zinc oxide added with aluminum oxide).
本発明のエッチング用組成物を使用する時の温度は、特に限定するものではないが、通常１０〜１００℃の範囲、好ましくは２０〜８０℃の範囲である。１０℃より低い温度では、エッチング速度が遅くなる場合があり、８０℃を超える温度では、水の蒸発のためエッチング用組成物の濃度を一定にすることが困難になる場合がある。 The temperature at which the etching composition of the present invention is used is not particularly limited, but is usually in the range of 10 to 100 ° C, preferably in the range of 20 to 80 ° C. When the temperature is lower than 10 ° C., the etching rate may be slow. When the temperature exceeds 80 ° C., it may be difficult to keep the concentration of the etching composition constant due to evaporation of water.
本発明のエッチング用組成物を使用し、エッチングする際、超音波等を使用し、エッチングを促進しても良い。 When the etching composition of the present invention is used for etching, ultrasonic etching may be used to accelerate the etching.
本発明を以下の実施例により更に詳細に説明するが、本発明はこれらに限定されるものではない。 The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto.
実施例１〜実施例６
ＺＡＯを石英上に５０ｎｍの厚みで成膜した基板を、表１記載のエッチング液に、表１記載の温度で浸漬した。ＺＡＯ膜が全部エッチングされた時間を表１に記した。
Examples 1 to 6
A substrate on which ZAO was formed to a thickness of 50 nm on quartz was immersed in the etching solution shown in Table 1 at the temperature shown in Table 1. The time when the ZAO film was completely etched is shown in Table 1.
表１から明らかなようにクエン酸又はクエン酸塩を用いることにより、工業的に十分な速度でＺＡＯ膜をエッチングすることができた。
As is clear from Table 1, by using citric acid or citrate, the ZAO film could be etched at an industrially sufficient rate.
Claims (5)
A method for etching a transparent electrode, comprising using the etching composition according to claim 1 as an etching solution.
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| JP2006220377A JP2008047645A (en) | 2006-08-11 | 2006-08-11 | Etching liquid and etching method of transparent electrode |
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| JP2006220377A JP2008047645A (en) | 2006-08-11 | 2006-08-11 | Etching liquid and etching method of transparent electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159814A (en) * | 2006-12-22 | 2008-07-10 | Mitsui Mining & Smelting Co Ltd | Etchant for zinc oxide based thin-film, and method for patterning zinc oxide based thin-film |
| JP2010067825A (en) * | 2008-09-11 | 2010-03-25 | Tosoh Corp | Etchant for transparent electrode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000232090A (en) * | 1999-02-10 | 2000-08-22 | Toshiba Corp | Method for removing glass passivation film |
| JP2005277402A (en) * | 2004-02-25 | 2005-10-06 | Mitsubishi Gas Chem Co Inc | Etching composition for laminated film including reflective electrode film and method for forming laminated wiring structure |
| WO2007072950A1 (en) * | 2005-12-22 | 2007-06-28 | Mitsui Mining & Smelting Co., Ltd. | Method for patterning zinc oxide transparent conductive film |
| JP2007317856A (en) * | 2006-05-25 | 2007-12-06 | Mitsubishi Gas Chem Co Inc | Etching liquid composition and etching method |
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2006
- 2006-08-11 JP JP2006220377A patent/JP2008047645A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000232090A (en) * | 1999-02-10 | 2000-08-22 | Toshiba Corp | Method for removing glass passivation film |
| JP2005277402A (en) * | 2004-02-25 | 2005-10-06 | Mitsubishi Gas Chem Co Inc | Etching composition for laminated film including reflective electrode film and method for forming laminated wiring structure |
| WO2007072950A1 (en) * | 2005-12-22 | 2007-06-28 | Mitsui Mining & Smelting Co., Ltd. | Method for patterning zinc oxide transparent conductive film |
| JP2007317856A (en) * | 2006-05-25 | 2007-12-06 | Mitsubishi Gas Chem Co Inc | Etching liquid composition and etching method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159814A (en) * | 2006-12-22 | 2008-07-10 | Mitsui Mining & Smelting Co Ltd | Etchant for zinc oxide based thin-film, and method for patterning zinc oxide based thin-film |
| JP2010067825A (en) * | 2008-09-11 | 2010-03-25 | Tosoh Corp | Etchant for transparent electrode |
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