JP2008046513A - Inorganic resist pattern, method for forming same, optical master disk, method for manufacturing same, method for manufacturing optical disk stamper and method for manufacturing optical disk substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress the formation of a crystalline interfacial layer between an inorganic resist layer and a substrate or a layer under the resist layer. <P>SOLUTION: A method for forming an inorganic resist pattern includes: a step of forming an inorganic resist layer 3 comprising a metal oxide above a substrate 1; a step of irradiating the inorganic resist layer 3 with laser light 3b to form a latent image 3a of a predetermined shape; and a step of developing the inorganic resist layer 3 to form a raised and recessed pattern of the inorganic resist layer 3 in which the latent image 3a forming portion is recessed above the substrate 1, wherein formation of a crystalline interfacial layer between the inorganic resist layer 3 and the substrate 1 or a layer 2 under the resist layer 3 is suppressed by using a metal oxide comprising a single transition metal as the above metal oxide. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an inorganic resist pattern, an inorganic resist pattern forming method, an optical disc master, a method of manufacturing an optical disc master, a method of manufacturing an optical disc stamper, and an optical disc, which are suitable for manufacturing optical disc masters, optical disc stampers, and optical disc substrates. The present invention relates to a method for manufacturing a substrate.

  As a means for realizing a high resolution and high taper angle shape pattern, a method using an inorganic resist has been proposed. These use an electron beam or an ion beam as an active energy source for drawing a shape pattern (for example, refer to Patent Documents 1 and 2), use an extreme ultraviolet light (for example, refer to Patent Document 3), or use a laser beam (for example, Non-Patent Document 1) has been reported.

  Among those using laser light as drawing energy, a method using a metal oxide as an inorganic resist material has been proposed (see, for example, Patent Documents 4 and 5). Since this inorganic resist forms a latent image by a thermal reaction, exposure of a pattern smaller than the spot diameter is possible even by exposure with visible laser light of about 405 nm. For this reason, it has been attracting attention as a useful technique for Blu-ray Disc (trademark) or higher optical disc mastering technology corresponding to higher recording density.

  Hereinafter, an outline of conventional processes from the production of the optical disc master to the production of the optical disc substrate will be described with reference to FIG. First, as shown in FIG. 17A, a disk-shaped glass substrate (or silicon substrate) 101 is manufactured. Next, as shown in FIG. 17B, a resist 102 is applied onto the glass substrate 101 while rotating the glass substrate 101.

  Next, as shown in FIG. 17C, while rotating the glass substrate 101, the resist 102 applied on the glass substrate 101 is exposed with a laser beam 103 having a predetermined wavelength. As a result, a latent image pattern corresponding to the desired land and groove of the optical disk is formed on the glass substrate 101. Next, as shown in FIG. 17D, while the glass substrate 101 is rotated, the developing solution 104 is dropped on the glass substrate 101 to perform development processing. As a result, a concavo-convex pattern corresponding to the desired land and groove of the optical disk is formed on the glass substrate 101. Thus, the target optical disc master is obtained.

  Next, as shown in FIG. 17E, a plating layer 105 is formed by depositing a metal such as nickel on the optical disk master 111 by plating. Next, as shown in FIG. 17 (f), the plating layer 105 is peeled from the optical disc master 111, and then trimmed to a predetermined size as shown in FIG. 106 is obtained. Then, as shown in FIG. 17 (h), the optical disc stamper 106 is mounted on the mold 107 of the injection molding apparatus, the mold 107 is closed to form a cavity, and the cavity is formed in the direction indicated by the arrow a. After injecting molten resin such as polycarbonate (PC), it is cured and the mold 107 is opened. Thereby, the optical disk substrate 108 to which the unevenness of the optical disk stamper 106 is transferred is obtained.

  By the way, when pattern formation is performed using an inorganic resist, the solubility in a developing solution is present between the inorganic resist layer and the base material that forms the layer, or a base layer that is formed for the purpose of adjusting the amount of heat storage. A layer different from the inorganic resist may be formed. This is particularly noticeable when the inorganic resist layer is a crystalline substance.

  As a countermeasure to suppress such a phenomenon, it is formed at the interface by combining a method of doping a substance having a different crystal structure into an inorganic material that easily causes crystallization and a method of cooling the temperature of the substrate to a very low temperature. An example in which the crystal is refined to less than 1 nm has been reported (see Non-Patent Document 2). In addition, a method of providing an organic layer on a substrate on which an inorganic resist is formed has been proposed (see, for example, Patent Document 6).

JP-A-6-132188 JP-A-8-69960 JP 2004-172272 A JP 2003-315988 A JP 2004-152465 A JP-A-8-15868 Japanese Journal of Applied Physics, 44, 3574-3577, 2005 Japanese Journal of Applied Physics, 32, 6218-6223, 1993

  When an amorphous inorganic resist layer is formed on a base material or a base layer formed on the base material, the layer that is often formed at the interface between the two and has a different solubility in the developer from the inorganic resist is large or small. In addition to having irregular irregularities, it sometimes grows to a protruding shape by heating. This interface layer is considered to be an inorganic resist crystal caused by the difference in interfacial tension or surface energy between the two materials.

  When the resist master is irradiated with an active energy ray and developed, surface irregularities of the undissolved interface layer appear under the inorganic resist dissolved by the development. In particular, when the inorganic resist is a heat-sensitive reaction type, unevenness may further grow at the laser heating portion on the interface layer and appear as a protrusion after development. Such a significant decrease in surface flatness causes a great deal of damage depending on the application of the transferred material when the transferred material is produced using this as a mold.

  On the other hand, if the taper angle of the pattern convex shape remaining after development can be controlled slowly or steeply, the application to which the inorganic resist can be applied is expanded accordingly. In particular, when the taper angle is made steep, the influence of “fogging” in microfabrication is reduced, so that higher density can be realized.

  The present invention has been made in view of the above-described problems, and can suppress the formation of a crystalline interface layer between an inorganic resist layer and an underlying base material or an underlying layer, and can also sharpen the taper angle of a pattern convex shape. It is an object to provide an inorganic resist pattern that can be formed, an inorganic resist pattern forming method, an optical disc master, a method of manufacturing an optical disc master, a method of manufacturing an optical disc stamper, and a method of manufacturing an optical disc substrate.

  In solving the above problems, the present inventors have intensively studied, and as a result, increased the metal purity of the metal oxide constituting the inorganic resist, so that the crystal between the inorganic resist layer and the underlying base material or the underlying layer can be obtained. It has been found that it is possible to suppress the occurrence of a conductive interface layer and to make the convex taper angle of the inorganic resist pattern steep, and the present invention has been completed.

  That is, the inorganic resist pattern and the optical disc master of the present invention are formed by patterning an inorganic resist layer on a substrate, and the inorganic resist layer is a positive heat-sensitive inorganic resist layer in which an exposed portion is dissolved. And a metal oxide containing a single transition metal.

  The method for producing an inorganic resist pattern and an optical disc master according to the present invention includes a step of forming an inorganic resist layer made of a metal oxide on a substrate, and a latent image having a predetermined shape by irradiating the inorganic resist layer with laser light. And forming a concavo-convex pattern of the inorganic resist layer in which the latent image forming portion is a concave portion on the substrate by developing the inorganic resist layer, and a single transition as a metal oxide A metal oxide made of metal is used.

  Furthermore, the method for manufacturing an optical disc stamper according to the present invention includes a step of forming an inorganic resist layer made of a metal oxide on a substrate, and a step of forming a latent image of a predetermined shape by irradiating the inorganic resist layer with laser light. And developing the inorganic resist layer to produce an optical disc master having a concave / convex pattern of the inorganic resist layer in which the latent image forming portion is a concave portion on the substrate, and forming a metal plating layer on the optical disc master And a step of peeling the metal plating layer from the optical disk master, and a metal oxide made of a single transition metal is used as the metal oxide.

  The optical disk substrate manufacturing method of the present invention includes a step of forming an inorganic resist layer made of a metal oxide on a substrate, and a step of irradiating the inorganic resist layer with a laser beam to form a latent image of a predetermined shape. Developing an inorganic resist layer to produce an optical disc master having a concave-convex pattern of the inorganic resist layer in which a latent image forming portion becomes a concave portion on a base material; and an optical disc substrate using an optical disc master or a replica mold thereof And a metal oxide made of a single transition metal is used as the metal oxide.

  In general, when a metal oxide has a low purity of a metal component and several kinds of metal elements are mixed, the metal oxide has many metastable crystal structures. For example, in a metal oxide containing tungsten and molybdenum, there are many metastable crystal structures with a low potential barrier between an amorphous state and a crystalline state. On the other hand, if the metal component is not pure (single element), the crystal is difficult to grow greatly. Therefore, a metal oxide in which several kinds of metal elements are mixed is in a state where a large number of small crystals are easily formed even with relatively low energy. For this reason, the contact surface in the inorganic resist layer is likely to be crystallized by the action of the interfacial tension of the underlayer.

  On the other hand, high-purity metal oxides (metal oxides of a single metal) have a small number of possible crystal structures. That is, the potential barrier between the amorphous state and the crystalline state is high, and the crystal structure is stable. Therefore, a high-purity metal element oxide forms a large crystal by applying relatively high energy. For this reason, the contact surface in the inorganic resist layer is unlikely to be crystallized by a weak force such as the interfacial tension of the underlayer.

  As described above, the metal oxide composing the inorganic resist layer is composed of a metal oxide made of a single transition metal (for example, tungsten), thereby making it difficult to cause a phase transition from amorphous to crystal, and to form an underlayer (or Generation of an interface layer between the base substrate) and the inorganic resist layer can be suppressed. As a result, the bottom surface of the concave portion of the inorganic resist pattern can be flattened. The metal purity of the metal oxide is generally 90% or more, preferably 98% or more.

  On the other hand, when a metal oxide having a high metal component purity such as tungsten oxide is used as an inorganic resist material, crystallization is less likely to occur than a metal oxide having a low metal component purity such as tungsten-molybdenum oxide. For this reason, it is considered that the amorphous metal oxide constituting the inorganic resist layer has a high ratio of the oxidation products that keep the microcrystals and amorphous without forming large crystals even after being oxidized by laser heating. In particular, this effect is remarkable at the peripheral portion in the laser irradiation portion, and it is considered that the boundary between the portion that is dissolved by development and the portion that is not dissolved is likely to be clear. For this reason, a sharp taper angle remaining after development can be obtained.

  Thus, by adjusting the metal purity of the metal oxide constituting the inorganic resist, the steepness of the taper angle of the convex shape of the concavo-convex pattern remaining after development can be freely adjusted, so that the inorganic resist can be applied. In addition to expanding applications, it is possible to reduce the influence of “fogging” in microfabrication and achieve high density.

  As described above, according to the present invention, an inorganic resist pattern and an optical disc excellent in surface flatness by suppressing the formation of a crystalline interface layer between the inorganic resist layer and the underlying base material or the underlying layer. Masters, optical disc stampers and optical disc substrates can be manufactured. Further, since the taper angle of the pattern convex shape can be made steep, the pattern can be densified.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a schematic diagram for explaining a manufacturing process of an optical disc master according to an embodiment of the present invention. FIG. 2 is a schematic diagram for explaining a manufacturing process of an optical disc stamper according to an embodiment of the present invention. FIG. 3 is a schematic diagram for explaining a manufacturing process of an optical disk substrate according to an embodiment of the present invention.

(Manufacturing process of optical disc master)
First, as shown to FIG. 1A, the smooth base material 1 which consists of a silicon substrate, a glass substrate, etc. is prepared or produced. Then, as shown in FIG. 1B, a base layer 2 for heat storage is formed on the substrate 1 by, for example, sputtering.

  As a material constituting the underlayer 2, for example, a mixture of zinc sulfide and silicon dioxide (ZnS-SiO2 mixture), tantalum pentoxide (Ta2O5), titanium oxide (TiO2), silicon (Si), silicon dioxide ( SiO2) and silicon nitride (SiN) can be mentioned. In particular, amorphous silicon excellent in high surface flatness and film thickness uniformity is suitable.

  The underlayer 2 is appropriately provided as necessary to adjust the heat sensitivity of the inorganic resist layer 3, and the film thickness can be arbitrarily determined according to the material composition and sensitivity of the inorganic resist layer. When the inorganic resist layer 3 is tungsten oxide and the substrate 1 is a silicon wafer, the thickness of the base layer 2 is preferably 15 nm or more and 100 nm or less. If it is less than 15 nm, sufficient exposure sensitivity cannot be obtained. On the other hand, if the thickness exceeds 100 nm, the sensitivity can be increased, but the reaction of the resist layer with respect to the laser power also becomes steep. Variations in the formed pattern are caused even by minute output fluctuations.

  Next, as shown in FIG. 1C, the inorganic resist layer 3 is formed on the base layer 2. A metal oxide is used as a material constituting the inorganic resist layer 3.

  As the metal oxide used in the present invention, any material can be used depending on the process for producing the desired shape on the substrate 1. Specific examples include titanium monoxide (TiO), titanium dioxide (TiO2), barium titanate (BaTiO3), tungsten trioxide (WO3), tungsten dioxide (WO2), tungsten monoxide (WO), molybdenum dioxide (MoO2). ), Molybdenum trioxide (MoO3), molybdenum monoxide (MoO), vanadium pentoxide (V2O5), vanadium tetroxide (V2O4), vanadium trioxide (V2O3), bismuth oxide (Bi2O3), cerium oxide (CeO2), oxide Copper (CuO), niobium pentoxide (Nb2O5), stubium oxide (antimony oxide: Sb2O3), calcium fluoride (CaF2), magnesium fluoride (MgF2), silicon monoxide (SiO), gadolinium oxide (Gd2O3), tantalum oxide (Ta2O5), oxidized Thorium (Y2O3), nickel oxide (NiO), samarium oxide (Sm2O3), iron oxide (Fe2O3), tin oxide (SnO2), aluminum oxide (Al2O3), silicon dioxide (SiO2), chromium oxide (Cr2O3), zinc oxide ( ZnO), indium oxide (In2O3), zirconium oxide (ZrO2), magnesium oxide (MgO), barium sulfate (BaSO4), calcium sulfate (CaSO4), calcium carbonate (CaCO3), calcium silicate (CaSi2O5), magnesium carbonate (MgCO3) ), Lithium carbonate (Li2CO3), sodium carbonate (Na2CO3), cobalt carbonate (CoCO3), strontium carbonate (SrCO3), nickel carbonate (Ni2CO3), bismuth carbonate ((BiO) 2CO3), phosphoric acid Luminium (AlPO4), barium hydrogen phosphate (BaHPO4), lithium phosphate (Li3PO4), zinc citrate (Zn3 (C6H5O7) 2), zinc borate (2ZnO.3B2O3), barium borate (BaB4O7), uranium oxide ( U3O8) can be cited as an example.

  Among these, as an inorganic resist that causes a difference in solubility (selection ratio) with respect to a developing solution by active energy rays such as laser, electron beam, ion beam, hydrogen plasma, ultraviolet ray, visible ray, and infrared ray, among metal oxides Tungsten, molybdenum, vanadium, tantalum, iron, nickel, copper, titanium, ruthenium, silver, zinc, aluminum, thallium, boron, germanium, niobium, silicon, uranium, tellurium, bismuth, cobalt, chromium, tin, zirconium Those containing manganese are known. Among these, tungsten, molybdenum, vanadium, tantalum, and iron can be used as the metal element. In particular, a metal oxide containing tungsten, molybdenum, and vanadium is preferably used as the inorganic resist layer 3.

  Here, in this embodiment, the inorganic resist layer 3 is made of a metal oxide containing a single transition metal such as tungsten oxide or molybdenum oxide.

  As a method for forming the inorganic resist layer 3, as a dry method, a CVD method such as thermal CVD, plasma CVD, or photo-CVD (Chemical Vapor Deposition): depositing a thin film from a gas phase using a chemical reaction PVD methods (Physical Vapor Deposition) such as vacuum deposition, plasma-assisted deposition, sputtering, and ion plating: a material that is physically vaporized in a vacuum is agglomerated on a substrate to form a thin film Can be used. Moreover, as a wet method, in addition to coating methods such as bar coating, spin coating, and screen printing, LB (Langmuir Blodgett) method, chemical deposition method, anodic oxidation method, electrolytic deposition method, and the like can be used.

  Note that the composition ratio of oxygen to the metal element does not need to be stoichiometric, and can take any value within a range up to the maximum oxidation number that the metal element can take. For example, in the case of tungsten oxide, WOx can take an arbitrary value x of 0 <x ≦ 3.

  A method for adjusting the amount of oxygen constituting the metal oxide used as the inorganic resist can be appropriately selected according to each film forming method. For example, when film formation is performed by a sputtering method, a method of forming a metal target containing no oxygen by reactive sputtering of oxygen, or a method of forming a film of a target made of a metal oxide with a controlled oxygen content by sputtering Etc. can be adopted.

  Although the thickness of the inorganic resist layer 3 formed on the base material 1 can be set arbitrarily, it is necessary to set it so that a desired pit or groove depth can be obtained. For example, in the case of Blu-ray Disk (trademark), the thickness of the inorganic resist layer 3 is preferably in the range of 15 nm to 80 nm, and in the case of DVD-RW (Digital Versatile Disc-ReWritable), 20 nm to 90 nm. The following range is preferable.

  Next, as shown in FIG. 1D, while rotating the silicon substrate 1, the inorganic resist layer 3 is exposed to the entire surface by irradiating the inorganic resist layer 3 with an exposure beam (laser light) 3b. Thereby, a latent image 3a corresponding to the locus of the exposure beam 3b is formed over the entire surface of the inorganic resist layer 3.

  FIG. 4 is a schematic diagram showing a configuration example of the cutting apparatus 30 used for exposure of the inorganic resist layer 3. A blue semiconductor laser (BLD: Blue Laser Diode) 31 emits blue laser light having a wavelength of 405 nm. The laser light passes through the lens 32 and the lens 33, and then the laser optical axis is appropriately adjusted in the X and Y directions in the XY beam shifter 34. Next, after the polarization of the laser light is converted by the quarter-wave plate 35, the laser light is reflected by the mirror 36 and guided to the shutter 37, and the passage is controlled by the shutter 37.

  The laser light that has passed through the shutter 37 enters an acousto-optical deflector (AOD) 39 via a cylindrical mirror 38, and is optically deflected by the acousto-optic deflector 39. Next, the optically deflected laser light passes through the cylindrical mirror 40, is reflected by the mirror 41, and is guided to a polarization separation element (PBS) 42. Next, the laser light is reflected by the polarization separation element 42, the polarized light is converted by the quarter wavelength plate 43, and the beam diameter is converted by the beam expander 44. Thereafter, the laser light is reflected by the dichroic mirror 45 and condensed on the inorganic resist sample 61 by the objective lens 46. The inorganic resist sample 61 is placed on the turntable 47 and rotated by the spindle 48 at a predetermined speed. Further, the cutting device 30 includes a moving optical table 60, and the spot of the laser beam is moved in the radial direction of the inorganic resist sample 61 as the moving optical table 60 moves.

  The return light from the inorganic resist sample with respect to the irradiated laser light passes through the objective lens 46, is reflected by the dichroic mirror 45, and passes through the beam expander 44, the quarter wavelength plate 43 and the polarization separation element 42. . Thereafter, the return light is reflected by the mirror 49, passes through the lens 50, is attenuated by an ND (Neutral Density) filter 51, and is supplied to a charge coupled device (CCD) 52. Here, the charge coupled device 52 is arranged for the purpose of observing the spot shape, profile, etc. of the return light from the inorganic resist sample 61, and is used for confirming whether the exposure conditions are optimal.

  A focus LD (Laser Diode) 53 emits a focus laser beam having a wavelength of 633 nm. The light emitted from the focus LD 53 passes through a focus polarization splitter (PBS) 54, and the polarized light is converted by the quarter wavelength plate 55. Then, the laser light is reflected by the dichroic mirror 56, passes through the dichroic mirror 45, and is then focused on the inorganic resist sample 61 by the objective lens 46.

  Further, the return light from the inorganic resist sample 61 with respect to the focus laser beam is transmitted through the dichroic mirror 45, then reflected by the dichroic mirror 56, and its polarization is converted by the quarter wavelength plate 55. The return light is reflected by the focus polarization separation element 54 and supplied to a focus position detection element (F-PSD) 57. The focus position detection element 57 detects the position based on the supplied laser beam, and the objective lens 46 is controlled according to the detection result.

  Next, while rotating the base material 1, a developer is dropped on the inorganic resist layer 3 to develop the inorganic resist layer 3 as shown in FIG. 1E. When the inorganic resist layer 3 is formed of a positive resist, the exposed portion exposed with the laser beam has a higher dissolution rate with respect to the developer than the non-exposed portion. Therefore, exposure with the laser beam (latent image 3a) A pattern corresponding to is formed on the inorganic resist layer 3. As described above, the optical disc master 10 in which the inorganic resist pattern is formed on the substrate 1 is produced.

  Any solution can be used as the developer as long as it dissolves the metal oxide thin film. As examples of acids, liquid acids such as hydrochloric acid, nitric acid, and acetic acid are appropriately diluted with water, and solid acids such as phosphoric acid, oxalic acid, citric acid, and tartaric acid are dissolved in water. Solutions can also be used. Examples of alkalis include tetramethylammonium hydroxide aqueous solution, ammonia aqueous solution, triethanolamine aqueous solution, diethanolamine aqueous solution, etc., as well as sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, A solution in which a solid alkali such as disodium hydrogen phosphate, dipotassium hydrogen phosphate, sodium dihydrogen phosphate, or potassium dihydrogen phosphate is dissolved in water can also be used.

  For the purpose of adjusting the development speed and efficiently removing development residues, the developer can be used by appropriately mixing an organic solvent with an aqueous solution or adding a penetrant or a surfactant. The temperature of the developer is not particularly limited, but a method such as adjusting the temperature appropriately may be employed to adjust the dissolution rate of the thin film.

(Optical disc stamper manufacturing process)
Next, as shown in FIG. 2A, a conductive film 4a such as a nickel film is formed on the concavo-convex pattern of the optical disk master 10 after development by, for example, an electroless plating method. Thereafter, the optical disc master 10 on which the conductive film 4a is formed is attached to an electroforming apparatus, and the conductive film 4a is plated to have a thickness of, for example, about 300 ± 5 μm by an electroplating method. As shown in FIG. 2, a plating layer 4 having a concavo-convex pattern is formed. In addition, as a material which comprises the plating layer 4, metals, such as nickel, can be used.

  Next, as shown in FIG. 2C, the plating layer 4 is peeled off from the optical disc master 10 with, for example, a cutter. Thereafter, the plated layer 4 is trimmed and processed to a predetermined size, and then the inorganic resist attached to the signal forming surface of the plated layer 4 is washed using, for example, acetone. Thus, the target optical disc stamper 11 can be obtained. The optical disc stamper 11 corresponds to a replica mold of the optical disc master 10.

(Manufacturing process of optical disk substrate)
Next, as shown in FIG. 3A, the concavo-convex pattern of the optical disc stamper 11 is transferred to a resin material such as polycarbonate (PC) by, for example, injection molding to produce the optical disc substrate 12. Specifically, for example, the optical disc stamper 11 is disposed in a molding die, the die is closed to form a cavity, a molten resin material such as polycarbonate is injected into the cavity, and the die is opened after curing. As a result, the optical disk substrate 12 to which desired pits and groove patterns are transferred is manufactured.

  Next, as shown in FIG. 3B, the information signal unit 5 is formed on the optical disk substrate 12. The information signal unit 5 is configured to be able to record and / or reproduce an information signal. The configuration depends on, for example, whether the desired optical disc is a reproduction-only type, a write-once type, or a rewritable type. It is selected appropriately.

  When the desired optical disk is a read-only type, the information signal unit 5 is made of, for example, a reflective film, and examples of the material of the reflective film include metal elements, metalloid elements, compounds or mixtures thereof. More specifically, for example, a simple substance such as Al, Ag, Au, Ni, Cr, Ti, Pd, Co, Si, Ta, W, Mo, Ge, or an alloy containing these simple substances as a main component is used. Can be mentioned. In consideration of practicality, it is preferable to use an Al-based material, an Ag-based material, an Au-based material, a Si-based material, or a Ge-based material among them. When the desired optical disk is a write-once type, the information signal unit 5 is a laminated film formed by sequentially laminating a reflective film and an organic dye film on the optical disk substrate 12, for example. When the desired optical disk is a rewritable type, the information signal unit 5 is formed by sequentially laminating a reflective film, a lower dielectric layer, a phase change recording layer, and an upper dielectric layer on the optical disk substrate 12, for example. It is a laminated film.

  Next, the information signal unit 5 on the optical disk substrate 12 is formed by a pressure-sensitive adhesive (PSA: Pressure Sensitive Adhesive) in which a planar annular light-transmitting sheet is uniformly applied to one main surface of the sheet in advance. Affix to the formed side. As a result, as shown in FIG. 3C, a light transmission layer 6 having, for example, 100 μm is formed on the information signal portion 5. The target optical disc 13 can be obtained by the above steps.

  In the above description, an example in which the optical disc substrate 12 and the optical disc 13 are manufactured using the optical disc stamper 11 has been described. However, the optical disc substrate 12 and the optical disc master 10 are used without using the optical disc stamper 11. It is also possible to manufacture the optical disc 13.

  As described above, the shape accuracy of the concavo-convex pattern formed on the surface of the optical disc substrate 12 depends on the shape accuracy of the concavo-convex pattern formed on the surface of the optical disc stamper 11. On the other hand, the shape accuracy of the concavo-convex pattern formed on the surface of the optical disc stamper 11 depends on the shape accuracy of the concavo-convex pattern formed on the surface of the optical disc master 10, that is, the inorganic resist pattern. Therefore, in order to form the optical disc substrate 12 with high accuracy, it is necessary to form the inorganic resist pattern of the optical disc master 10 with high accuracy.

(Formation of inorganic resist pattern)
Next, details of the method for forming an inorganic resist pattern in the present embodiment will be described. An inorganic resist using a metal oxide functions as a heat-sensitive inorganic resist. In particular, the inorganic resist layer 3 in the present embodiment is configured as a positive resist. As schematically shown in FIG. 5, the positive resist is formed by irradiating the inorganic resist layer 3 with laser light 3b to form a latent image 3a at the irradiated portion, and developing the latent image 3a. The concavo-convex pattern in which the forming portion becomes a concave portion is formed.

  Here, when forming the inorganic resist pattern, there are some technical problems as described below.

  FIG. 6 schematically shows the behavior of the resist material in the exposure process. As shown in FIG. 6A, the inorganic resist layer 3 is composed of an amorphous metal oxide layer (for example, WO1.5). In the laser-heated inorganic resist, as shown in FIG. 6B, the resist composition in the heated portion is changed to generate a rise of 3V. This is because local oxidation / reduction reactions occur due to rapid heating by the laser, resulting in generation of crystals, change in specific gravity, generation of cracks, etc., as well as oxygen released from metal oxides, which are inorganic resist materials, This is thought to be caused by cracks being spread or voids formed between crystals. Since the bulge 3V has a shape in which the skirt is widened with the laser irradiation portion at the apex, a portion 3W of the bulge may remain at the edge portion even in the shape of the non-exposed portion remaining after development (FIG. 6C).

  It should be noted that the ease of development of the laser irradiation portion is substantially proportional to the laser power within the range where the inorganic resist exhibits a positive type property. However, in the manufacturing process, it is desirable that the ease of development of the inorganic resist is not sensitive to changes in the laser power, that is, the same level of developability can be obtained with respect to a certain amount of irradiation fluctuation. . In other words, it is desirable that there is a margin in the laser power required to form a positive latent image.

  In addition, since the inorganic resist has a low molecular weight, a clear pattern can be obtained at the boundary between the exposed area and the unexposed area, and the convex taper angle of the resist pattern becomes steeper and higher than that of the organic resist. High density fine processing can be realized. On the other hand, when the optical disc master is formed using an inorganic resist, the convex taper angle of the concave-convex pattern (resist pattern) (for example, the angle θ formed between the pattern side wall and the bottom as shown in FIG. 1E) is steep. If it exists, the peelability of the optical disk stamper and the optical disk substrate onto which the uneven shape is transferred is lowered. Therefore, if the convex taper angle of the concavo-convex pattern remaining after development can be freely adjusted so that it is slow or steep, the application to which inorganic resist can be applied is expanded accordingly, and the influence of fogging in microfabrication is reduced. High density can be realized.

  Further, when the inorganic resist layer 3 is formed on the base material 1 via the base layer 2, an interface layer 8 appears between the base layer 2 and the inorganic resist layer 3 as schematically shown in FIG. Sometimes. This is considered to be an inorganic resist crystal caused by the difference in interfacial tension (or difference in surface energy) between the two materials. When the development is performed by irradiating active energy rays, the surface unevenness 8a of the interface layer 8 remaining undissolved may appear under the inorganic resist layer 3 dissolved by the development. In particular, when the inorganic resist layer 3 is a heat-sensitive reaction type, crystals further grow at the laser heating portion on the interface layer 8 and appear as large irregularities and protrusions after development.

  Next, the presumed reaction mechanism of the inorganic resist investigated by the present inventors will be described.

  When a metal oxide is used as a heat-sensitive inorganic resist, it is due to local thermal expansion at the laser irradiation site of the resist film, oxygen redistribution (oxidation / reduction reaction) between the molecules constituting the resist, and decomposition of the metal oxide. It is thought that oxygen gas release occurs simultaneously. That is, due to the rapid increase in molecular vibration caused by local intense heat for a short time, instantaneous volume expansion and chemical reaction occur at the laser irradiation site, and at the same time, fine cracks are generated.

  Here, with reference to FIG. 6, some of the molecules ignited by laser irradiation release oxygen to form a reductant (for example, amorphous WO), and some receive the oxygen and oxidize. It becomes a body (for example, amorphous WO3, crystal WO3). Metal oxides such as tungsten oxide (WOx, 0 <x ≦ 3) and molybdenum oxide (MoO, 0 <x ≦ 3) used as an inorganic resist material in the present invention have high oxidation levels (x is large). Those having high alkali solubility and low oxidation level (small x) have low alkali solubility. Therefore, at the laser irradiation site, the oxidized portion has improved alkali solubility, and the reduced portion has reduced alkali solubility. In this way, if the oxidation product is subjected to alkali development in a state where the oxidation product and the reduction product are mixed, the oxidation product is dissolved, so that the reduction product dispersed therein is also detached together, and as a result. It is considered that the entire site where the oxidation / reduction reaction has occurred is developed to form a shape pattern.

In addition, during the oxidation / reduction reaction, the volume of the reductant decreases compared to the original molecule, and the volume of the oxidant increases. The specific gravity of the primary metal oxide used in the present invention, the crystal W3O (14.7g / cm ^3), amorphous WO1.5 (11g / cm ^3), crystal WO2 (10.8g / cm ^3), crystalline WO3 (7 0.2 g / cm ³ ), amorphous WO ³ (6.8 g / cm ³ ), crystalline MoO 2 (6.5 g / cm ³ ), crystalline MoO ³ (4.7 g / cm ³ ), and the specific gravity decreases as the oxidation proceeds. (Volume increases). Further, when the amorphous metal oxide layer formed is laser-heated, a large number of crystal particles are generated around the laser irradiation portion. Here, when comparing amorphous and crystal with respect to alkali solubility, if the compound has the same oxidation level, for example, WO3, the amorphous is shorter than the crystal with respect to the alkali because the lattice bond is not formed. Dissolve with. This property is used in pattern formation of a negative resist. It is considered that the increase and decrease in volume and the generation of crystal particles occur simultaneously in a short time, which is a cause of cracks.

  Furthermore, it is conceivable that oxygen released from the metal oxide by intense heat pushes cracks and creates voids between crystals. Here, a metal oxide such as tungsten oxide (WOx, 0 <x ≦ 3) or molybdenum oxide (MoOx, 0 <x ≦ 3), which has a relatively high oxidation level such as x of 2 or more, is heated by laser. It is considered that the rate of oxygen gas generation is also increased by this, and this is thought to expand the cracks or create voids between the crystals to greatly expand the volume (corresponding to the rise 3V in FIG. 6B). For this reason, the rising of the edge portion of the shape pattern obtained by development (corresponding to the rising 3W in FIG. 6C) also increases. On the contrary, if the oxidation level is relatively low, for example, x is less than 2, the amount of oxygen gas generated is considered to be small. For this reason, the volume expansion of the laser irradiation part is also reduced, and the rising 3W of the edge portion of the shape pattern obtained by development is reduced.

  In addition, it is thought that the generated crack and the space | gap between crystals contribute to improving the effect which penetrates a developing solution inside. For this reason, the higher the oxidation level, the higher the alkali solubility.

  In the present embodiment, based on the above considerations, the above-described technical problems at the time of forming an inorganic resist pattern are solved.

  As described above, the swell 3V (FIG. 6B) of the inorganic resist layer 3 generated in the laser irradiation portion is caused by the thermal expansion of the inorganic resist and the generation of cracks caused by local intense heat in a short time, and the density due to oxidation / reduction reactions. This is considered to be caused by distribution, volume expansion / contraction due to generation of crystal particles, oxygen gas generation due to decomposition of the inorganic resist material, voids between crystals, and the like. The bulge 3V becomes large in the irradiation center portion where the generation of crystal particles due to laser heating is particularly remarkable, and becomes a convex shape with the skirt widened in the peripheral direction. It is presumed that the crystal particles are mainly composed of a portion oxidized by exchange of oxygen between metal oxides and stabilized by forming a crystal lattice.

  In a metal oxide which is an inorganic resist, when several kinds of metal elements are mixed as a metal component, a portion oxidized by heating is in a state where many small crystals are likely to be generated. If laser irradiation is performed here, it will refine | miniaturize as it goes to the skirt part from the irradiated center part. When this is alkali-developed, dissolution starts from the peripheral part irradiated with the laser, and then desorbs so that crystal grains near the central part are removed. Then, dissolution proceeds in a rectangular shape in the depth direction, and a convex pattern is formed. FIGS. 8A to 8D and FIGS. 9E to 9H show how the convex shape changes with time. FIG. 8 and FIG. 9 are cross-sectional profiles obtained by an atomic force microscope for explaining the temporal change of the concavo-convex pattern in the development process of the positive inorganic resist.

  That is, it is not the irradiation center portion that is most easily developed in the laser irradiation portion, but the peripheral portion where a large crystal does not grow while the inorganic resist is oxidized and the ratio of microcrystalline and amorphous oxidation products is high. Therefore, in the case of an inorganic resist material having a low purity of a metal component such as a tungsten-molybdenum mixed oxide and easily generating crystals, it is considered that the boundary between a portion that is dissolved by development and a portion that is not dissolved is likely to be unclear. For this reason, a convex taper angle remaining after development can be obtained.

  In contrast, when a metal oxide having a high purity of a metal component such as tungsten oxide is used as an inorganic resist material, crystallization is less likely to occur than a metal oxide having a low purity of a metal component such as tungsten-molybdenum oxide. . For this reason, it is considered that the amorphous metal oxide constituting the inorganic resist layer has a high ratio of the oxidation products that keep the microcrystals and amorphous without forming large crystals even after being oxidized by laser heating. In particular, this effect is remarkable at the peripheral portion in the laser irradiation portion, and it is considered that the boundary between the portion that is dissolved by development and the portion that is not dissolved is likely to be clear. Therefore, a steep taper angle remaining after development can be obtained.

As described above, by adjusting the amount of oxygen constituting the metal oxide, it is possible to suppress the bulge 3W (FIG. 6C) of the edge portion, or to make the convex taper angle of the concavo-convex pattern slow or steep.
As already described, it is considered that the oxygen generated by the decomposition of the metal oxide pushes the cracks and creates voids between the crystals, thereby increasing the volume of the laser irradiation part. Therefore, by limiting the amount of oxygen constituting the metal oxide to the minimum amount that allows pattern formation by development, it is possible to suppress the bulge 3W at the edge portion. On the other hand, as the oxidation level of the metal oxide increases, the transparency increases and the laser transmittance increases. For this reason, the temperature difference between the surface and the bottom surface of the laser-irradiated inorganic resist becomes smaller as the metal oxide has a higher oxidation level. Furthermore, the electrical resistance increases in proportion to the increase in the oxidation level of the metal oxide, and the thermal conductivity decreases in inverse proportion to this. For this reason, in the inorganic resist film, the thermal conductivity in the direction perpendicular to the laser incident direction becomes smaller as the oxidation level becomes higher. As a result, as the oxidation level of the metal oxide increases, the temperature gradient in the film thickness direction becomes smaller, and heat is stored in a narrow region around the laser irradiation part (FIGS. 10A and 10B). For these reasons, it is considered that the taper angle is steeper for those with higher oxidation levels than for those with lower oxidation levels.

  On the other hand, in the process of forming a latent pattern by heating an inorganic resist with a laser and then developing it to form a shape pattern, it is not desirable in terms of manufacturing management that the appearance of the obtained shape pattern greatly depends on the laser power. That is, when the laser power is increased, the amount of heat applied to the resist also increases in proportion to this, so if the resist film thickness is the same, the fluctuation in laser power appears as a difference in width (groove width) between the shape patterns. . The power margin is substantially increased when the difference in solubility (selection ratio) between the portion dissolved by development and the remaining portion is increased. Therefore, this problem can be dealt with by a method of keeping the amount of oxygen constituting the metal oxide low.

  The power margin was determined by using the fluctuation range of the ratio between the incident light amount and the reflected light amount when the irradiation laser power was changed at a constant interval. This value is influenced not only by the reflectance change based on the composition change caused by laser heating of the inorganic resist, but also by light scattering caused by the rising 3V of the inorganic resist layer 3.

  Next, a countermeasure for suppressing the surface unevenness of the interface layer 8 formed between the base layer 2 and the inorganic resist layer 3 will be described.

  As described above, when a metal oxide is used as the inorganic resist, the base layer 2 for heat storage is formed on the base material 1 as necessary, and the inorganic resist layer 3 is formed thereon (see FIG. 1C). At this time, due to the interfacial tension or surface energy difference between the substrate 1 or the base layer 2 and the inorganic resist layer 3, the inorganic resist layer 3 may crystallize at the contact interface with the base. This crystal grows further by heating. Accordingly, when the inorganic resist layer 3 is laser-heated, crystals existing in the heated portion grow greatly. As already described, when developing a laser-heated inorganic resist layer, the crystal generally takes longer to dissolve than amorphous because the particles form lattice bonds. For this reason, after the inorganic resist layer 3 of the laser heating portion is dissolved, the crystals in the interface layer may remain in the shape of the protrusions 8a (FIG. 7).

  In general, when the purity of a metal component in a metal oxide is low and several kinds of metal elements are mixed, the metal oxide has many metastable crystal structures. That is, as schematically shown in FIG. 11A, in a metal oxide containing tungsten and molybdenum, a crystal structure cr1, cr2,... In a metastable state with a low potential barrier between the amorphous state and the crystalline state cr3. There are many. On the other hand, if the metal component is not pure (single element), the crystal is difficult to grow greatly. Therefore, a metal oxide in which several kinds of metal elements are mixed is in a state where a large number of small crystals are easily formed even with relatively low energy. For this reason, the contact surface in the inorganic resist layer 3 is likely to be crystallized also by the action of the interfacial tension with the base layer 2.

  On the other hand, high-purity metal oxides (metal oxides of a single metal) have a small number of possible crystal structures. That is, as shown in FIG. 11B, the potential barrier between the amorphous state and the crystalline state is high, and the crystal structure is stable. On the other hand, since the metal component is pure, the crystal lattice can grow large. Therefore, a high-purity metal element oxide forms a large crystal by applying relatively high energy. For this reason, the contact surface in the inorganic resist layer is less likely to be crystallized by a weak force such as an interfacial tension with the base layer 2.

  As described above, the metal oxide composing the inorganic resist layer 3 is composed of a metal oxide made of a single transition metal (for example, tungsten), thereby making it difficult to cause a phase transition from amorphous to crystal. And the generation of the interface layer 8 between the inorganic resist layer 3 can be suppressed. As a result, the bottom surface of the concave portion of the inorganic resist pattern can be flattened. The metal purity of the metal oxide is generally 90% or more, preferably 98% or more.

  As described above, by controlling the amount of oxygen contained in the metal oxide constituting the inorganic resist layer 3, the convex taper angle of the concavo-convex pattern formed after development can be arbitrarily adjusted. . That is, the convex taper angle can be formed relatively large (steep) by increasing the amount of oxygen, and conversely, the convex taper angle can be formed relatively small (slowly) by decreasing the amount of oxygen. .

  Further, by reducing the amount of oxygen, the exposed portions of the inorganic resist layer 3 and the bulges 3V and 3W of the developed edge portions can be reduced, and the laser power necessary to obtain a pattern having a fixed shape is wide. Since a margin can be given, introduction into the manufacturing process becomes easy.

  The adjustment of the taper angle can be controlled not only by the amount of oxygen but also by the metal purity of the metal oxide. That is, the convex taper angle can be formed relatively large by increasing the purity of the metal component of the metal oxide, and the convex taper angle can be formed relatively small by decreasing the purity of the metal component. Furthermore, by increasing the metal purity of the metal oxide, the generation of a crystalline interface layer between the underlayer 2 and the inorganic resist layer 3 can be suppressed, and a resist pattern with excellent shape accuracy can be formed.

  As described above, according to this embodiment, by adjusting the convex taper angle of the concavo-convex pattern by adjusting the amount of oxygen contained in the metal oxide, for example, in manufacturing the optical disc master 10 described above, By reducing the amount of oxygen, the taper angle of the convex shape can be reduced, and the peelability of the optical disc stamper 11 and the optical disc substrate 12 can be improved. Further, since the pattern density that can be formed only by adjusting the oxygen amount can be easily changed, it can be easily applied to masters of other industrial products other than the manufacture of the optical disc master.

  Further, by increasing the metal purity of the metal oxide, the bottom surface of the concave portion of the formed inorganic resist pattern can be formed flat. Therefore, the upper surface of the convex portion of the concave / convex pattern of the optical disc stamper 11 and the optical disc stamper 11 The flatness of the concave bottom surface of the concave / convex pattern of the optical disk substrate 12 to be manufactured can be improved.

  Examples of the present invention will be described below, but the present invention is of course not limited to these examples.

[Preparation conditions for resist master]
A base layer of 100 nm made of amorphous silicon was formed on the substrate by sputtering so that the heat of the laser applied to the inorganic resist layer was efficiently accumulated. The film forming conditions for the underlayer are shown below.
Base material: 8 inch silicon wafer Target material: Silicon Film forming gas: Argon (Ar): 26 [sccm]
Deposition start gas pressure: 5.0 × 10 ⁻⁴ [Pa]
Deposition power: DC135 [W]

  On this underlayer, an inorganic resist layer was formed by the method shown in the following examples to obtain a resist master (optical disc master).

[Exposure and development conditions]
The produced resist master was subjected to laser irradiation and development under the following conditions to produce a DC groove pattern (pattern without wobble).
Light source: Semiconductor laser (wavelength 405 [nm])
Objective lens: numerical aperture NA = 0.9
Optical disc master feed rate: 0.32 [μm / revolution]
Spindle: CLV (Constant Linear Velocity) method: 4.9 [m / sec]
Developer: 2.38% tetramethylammonium aqueous solution

(Comparative example)
An inorganic resist layer was formed on the underlayer by the following method. The film thickness after film formation was 23 nm.
Target material: Tungsten (W) / Molybdenum (Mo) / Oxygen (O)
= 32/8/60 (atomic ratio)
Deposition gas: Argon (Ar): 26 [sccm]
Oxygen (O2): 2 [sccm]
Deposition start gas pressure: 5.0 × 10 ⁻⁴ [Pa]
Deposition power: DC135 [W]

  The obtained master was subjected to laser irradiation and development to produce a DC groove pattern, and the surface shape was measured with an atomic force microscope. The result is shown in FIG. A large protrusion is generated at the bottom of the groove. The convex taper angle was 26 °.

(Example 1)
An inorganic resist layer was formed on the underlayer by the following method. The film thickness after film formation was 30 nm.
Target material: Tungsten (W)
Deposition gas: Argon (Ar): 28 [sccm]
Oxygen (O2): 2 [sccm]
Deposition start gas pressure: 5.0 × 10 ⁻⁴ [Pa]
Deposition power: DC135 [W]

  The obtained master was subjected to laser irradiation and development to produce a DC groove pattern, and the surface shape was measured with an atomic force microscope. The result is shown in FIG. Protrusions at the bottom of the groove were not observed. Further, the bulge of the convex edge portion was 1.3 nm, and the taper angle was 46 °.

(Example 2)
An inorganic resist layer was formed on the underlayer by the following method. The film thickness after film formation was 30 nm.
Target material: Tungsten (W)
Deposition gas: Argon (Ar): 29 [sccm]
Oxygen (O2): 1 [sccm]
Deposition start gas pressure: 5.0 × 10 ⁻⁴ [Pa]
Deposition power: DC135 [W]

  The obtained master was subjected to laser irradiation and development to produce a DC groove pattern, and the surface shape was measured with an atomic force microscope. The result is shown in FIG. Protrusions at the bottom of the groove were not observed. Further, the convex edge portion did not rise, and the taper angle was 39 °.

From the results of Examples 1 and 2, when compared with the comparative example, the metal oxide in the inorganic resist is composed of a metal oxide of a tungsten single metal, thereby preventing the occurrence of protrusions at the groove bottom. did it.
From the results of Example 2, it can be seen that, when compared with Example 1, by reducing the amount of oxygen in the inorganic resist, the rising of the convex edge portion disappeared and the taper angle became slow.

(Example 3)
The relationship between the laser power and the reflectance of the inorganic resist used in Example 1 was examined. The result is shown in FIG. The slope of the straight line when the plot was approximated by a linear line by the method of least squares was −0.26.

Example 4
The relationship between the laser power and the reflectance of the inorganic resist used in Example 2 was examined. The result is shown in FIG. The slope of the straight line when the plot was approximated by a linear line by the method of least squares was −0.21.

  When compared with Example 3, it can be seen that by reducing the amount of oxygen contained in the inorganic resist, the reflectance ratio with respect to power fluctuations was reduced (the power margin was increased).

  As mentioned above, although embodiment of this invention was described, of course, this invention is not limited to this, A various deformation | transformation is possible based on the technical idea of this invention.

  For example, the specific numerical values given in the above embodiments and examples are merely examples, and different numerical values may be used as necessary.

  In the above-described embodiment, the example in which the present invention is applied to the optical disk master and the manufacturing method thereof has been described. However, the present invention is not limited to this, and various devices having a fine uneven pattern, for example, light reflection prevention in solar cells. The present invention is also applicable to the structure, the fuel flow path in the fuel cell, and the manufacturing method thereof.

It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the inorganic resist pattern and optical disc original disc by one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the optical disk stamper by one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the optical disk board | substrate by one Embodiment of this invention. It is a schematic block diagram of the cutting apparatus used for exposure of the inorganic resist layer. It is a schematic diagram explaining the formation method of the uneven | corrugated pattern of positive type inorganic resist. It is a schematic diagram for demonstrating the mode of the phase change of the metal oxide in the inorganic resist layer at the time of exposure. It is a schematic diagram for demonstrating the interface layer formed between an inorganic resist layer and a base layer, and its problem. It is a figure for demonstrating the temporal change of the uneven | corrugated pattern in the image development process of positive type inorganic resist, and is a cross-sectional profile by an atomic force microscope. It is a figure for demonstrating the temporal change of the uneven | corrugated pattern in the image development process of positive type inorganic resist, and is a cross-sectional profile by an atomic force microscope. It is a schematic diagram for demonstrating the relationship between the level of the oxidation level of an inorganic resist film, and the taper angle of a pattern. It is a potential diagram explaining the mode of the phase transition from the amorphous state to the crystalline state due to the difference in the metal phase of the metal oxide constituting the inorganic resist. It is a cross-sectional profile by the atomic force microscope of the inorganic resist pattern demonstrated in the comparative example of this invention. It is a cross-sectional profile by the atomic force microscope of the inorganic resist pattern formed in Example 1 of this invention. It is a cross-sectional profile by the atomic force microscope of the inorganic resist pattern formed in Example 2 of this invention. It is a figure which shows the relationship between the irradiation laser power about the inorganic resist pattern of Example 1 demonstrated in Example 3 of this invention, and a reflectance. It is a figure which shows the relationship between the irradiation laser power about the inorganic resist pattern of Example 2 demonstrated in Example 4 of this invention, and a reflectance. It is a schematic diagram for demonstrating the outline of the conventional process from preparation of an optical disk original disk to preparation of an optical disk substrate.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Base material, 2 ... Underlayer, 3 ... Inorganic resist layer, 8 ... Interface layer, 8a ... Surface unevenness | corrugation (protrusion), 10 ... Optical disc master, 11 ... Optical disc stamper, 12 ... Optical disc substrate, 13 ... Optical disc, 30 ... Cutting device

Claims (11)

An inorganic resist pattern formed by patterning an inorganic resist layer on a substrate,
The inorganic resist layer is
While being a positive-type heat-sensitive inorganic resist layer in which the exposed portion dissolves,
An inorganic resist pattern comprising a metal oxide containing a single transition metal. The inorganic resist pattern according to claim 1, wherein the single transition metal is any one of tungsten, molybdenum, and vanadium. The inorganic resist pattern according to claim 1, wherein a base layer is formed between the base material and the inorganic resist layer. Forming an inorganic resist layer made of a metal oxide on a substrate;
Irradiating the inorganic resist layer with laser light to form a latent image of a predetermined shape;
Developing the inorganic resist layer to form a concave / convex pattern of the inorganic resist layer in which the latent image forming portion is a recess on the base material, and a method of forming an inorganic resist pattern,
A method for forming an inorganic resist pattern, wherein a metal oxide composed of a single transition metal is used as the metal oxide. 5. The method for forming an inorganic resist pattern according to claim 4, wherein the metal oxide is used to prevent the formation of protrusions at the bottom of the groove after the development of the inorganic resist layer. The method for forming an inorganic resist pattern according to claim 5, wherein the taper angle of the convex shape of the concavo-convex pattern is controlled by the amount of oxygen contained in the metal oxide. 6. The method for forming an inorganic resist pattern according to claim 5, wherein the bulge of the exposed portion of the inorganic resist layer is controlled by the amount of oxygen contained in the metal oxide. An optical disc master formed by patterning an inorganic resist layer on a substrate,
The inorganic resist layer is
While being a positive-type heat-sensitive inorganic resist layer in which the exposed portion dissolves,
An optical disc master comprising a metal oxide containing a single transition metal. Forming an inorganic resist layer made of a metal oxide on a substrate;
Irradiating the inorganic resist layer with laser light to form a latent image of a predetermined shape;
And developing the inorganic resist layer to form a concavo-convex pattern of the inorganic resist layer in which the latent image forming portion is a recess on the substrate,
A method of manufacturing an optical disc master, wherein a metal oxide composed of a single transition metal is used as the metal oxide. Forming an inorganic resist layer made of a metal oxide on a substrate;
Irradiating the inorganic resist layer with laser light to form a latent image of a predetermined shape;
Developing the inorganic resist layer to produce an optical disc master having a concave-convex pattern of the inorganic resist layer on which the latent image forming portion is a concave portion on the substrate;
Forming a metal plating layer on the optical disc master,
A method of manufacturing an optical disc stamper comprising a step of peeling the metal plating layer from the optical disc master,
A method for producing an optical disc stamper, wherein a metal oxide comprising a single transition metal is used as the metal oxide. Forming an inorganic resist layer made of a metal oxide on a substrate;
Irradiating the inorganic resist layer with laser light to form a latent image of a predetermined shape;
Developing the inorganic resist layer to produce an optical disc master having a concave-convex pattern of the inorganic resist layer on which the latent image forming portion is a concave portion on the substrate;
A method of manufacturing an optical disk substrate, comprising the step of forming an optical disk substrate using the optical disk master or a replica mold thereof,
A method of manufacturing an optical disk substrate, wherein a metal oxide composed of a single transition metal is used as the metal oxide.

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