JP2008026281A - Microprobe - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a microprobe having a sharp tip, and enhancing a strength. <P>SOLUTION: The microprobe comprises: a base 4; an intermediate layer 6 provided on the base 4; and a probe 8 provided on the intermediate layer 6 and formed from diamond. The probe 8 has a root 10 connected to the intermediate layer 6, and the sharp tip 12. A tip diameter D of the probe 8 is 0.5 μm or less. A first aspect ratio T1 of a width L2 of a cross section of the probe 8 at a predetermined distance from the tip 12 of the probe 8 divided by a length L1 from the tip 12 to the cross section is 0.3 or more. A second aspect ratio T2 of a width L4 at the root 10 of the probe 8 divided by a length L3 from the tip 12 of the probe 8 to the root 10 is 0.36 or more. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a microprobe.

The microchip (microprobe) disclosed in the following Patent Document 1 includes a central portion (main body) made of ceramic with relatively high hardness and hard graphite or the like covering the surface of the main body. The microprobe disclosed in Patent Document 2 below includes a silicon substrate and a diamond probe provided on the silicon substrate. The microprobe disclosed in Patent Document 3 below has a probe formed by growing diamond on the surface of a mold made of silicon.
Japanese Patent Laid-Open No. 06-011335 JP-A-10-259092 JP 2002-98622 A

  The strength of the microprobe described in Patent Document 1 is coated with hard graphite, but it is considered that it depends on the strength of the main body forming the probe, not the strength of the coating material. For this reason, there is a concern that the strength of the main body formed of a non-hard material is insufficient. Since the tip of the diamond probe of the microprobe described in Patent Document 2 depends on the crystal shape of the diamond, it is difficult to form a tip that is sharper than the tip using the crystal shape. Have difficulty. The tip of the microprobe described in Patent Document 3 is made of diamond formed using a mold, but it is generally difficult to form a sharp tip using such a mold because a special technique is required. It is.

  Accordingly, an object of the present invention is to provide a microprobe having a sharp tip and improved strength.

  The present invention comprises a base, an intermediate layer provided on the base, and one or a plurality of probes made of diamond provided on the intermediate layer, wherein the intermediate layer is a metal material or a resin material The probe has a distal end and a proximal end connected to the intermediate layer, and the tip diameter of the probe is 0.5 μm or less, and a predetermined distance from the distal end to the vicinity of the distal end. The first aspect ratio obtained by dividing the width of the cross-section of the probe at the position by the length from the tip to the cross-section is 0.3 or more, and the width of the base end from the tip to the base end The second aspect ratio divided by the length is 0.36 or more. Furthermore, in the present invention, it is preferable that the tip has conductivity.

  The present invention also includes a base, an intermediate layer provided on the base, and a probe made of diamond provided on the intermediate layer, and the intermediate layer is made of a metal material or a resin material. The probe has a substrate region connected to the intermediate layer and one or a plurality of projection regions provided on the substrate region, and a tip diameter of the projection region is 0.5 μm or less. And the first aspect ratio obtained by dividing the width of the cross section of the projection region at a predetermined position near the tip from the tip of the projection region by the length from the tip to the cross section is 0.3 or more and 0.71 or less The second aspect ratio obtained by dividing the width of the connection surface of the substrate region connected to the intermediate layer by the length from the tip of the projection region to the connection surface is 0.36 or more. It is characterized by. Furthermore, in the present invention, it is preferable that the tip has conductivity.

  Further, the present invention includes a base and a probe made of diamond provided on the base, and the probe is provided with a substrate region connected to the base and one substrate provided on the substrate region. Or a plurality of projection regions, the tip region has a tip diameter of 0.5 μm or less, and the width of the cross section of the projection region at a predetermined position near the tip from the tip of the projection region is The first aspect ratio divided by the length to the cross section is 0.71 or less, and the width of the connection surface of the substrate region connected to the base body is set to be from the tip of the projection region to the connection surface. The second aspect ratio divided by the length is 1.1 or more. Furthermore, in the present invention, it is preferable that the tip has conductivity.

  In addition, the present invention includes a base and a probe made of diamond provided on the base, and the probe has a substrate region connected to the base and one or more provided on the substrate region. A plurality of protruding regions, and a tip end diameter of the protruding region is 0.5 μm or less, and a width of a cross section of the protruding region at a predetermined position near the tip from the tip of the protruding region is The first aspect ratio divided by the length to the cross section is 0.3 or more and 0.71 or less, and the width of the connection surface of the substrate region connected to the base is changed from the tip of the projection region to the connection The second aspect ratio divided by the length to the surface is 1.1 or more. Furthermore, in the present invention, it is preferable that the tip has conductivity.

  Further, the present invention includes a base and a probe made of diamond provided on the base, and the probe is provided on a mesa-shaped substrate region connected to the base, and on the substrate region. One or a plurality of protruding regions, the tip diameter of the protruding region is 0.5 μm or less, and the width of the cross section of the protruding region at a predetermined position near the tip from the tip of the protruding region The first aspect ratio divided by the length from the tip to the cross section is 0.3 or more, and the width of the connection surface of the substrate region connected to the base is determined from the tip of the projection region to the connection. The second aspect ratio divided by the length to the surface is 1.1 or more. Furthermore, in the present invention, it is preferable that the tip has conductivity.

  Thus, as a result of intensive research, the present inventor has a tip diameter of 0.5 μm or less, and when the metal layer or the resin material layer is included, the first aspect ratio is 0.3 or more, or When a probe having a second aspect ratio of 0.36 or more is used and the metal layer and the resin material layer are not used, the first aspect ratio is 0.3 or more, or 0 A sharp and high-strength microprobe suitable for work on a fine part when a probe having a second aspect ratio of 1.1 or more is used. It was found that can be realized.

  Therefore, according to the present invention, it is possible to provide a microprobe having a sharp tip and improved strength.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are assigned to the same elements, and duplicate descriptions may be omitted. FIG. 1A is a cross-sectional view showing the configuration of the microprobe 2 according to the embodiment. Hereinafter, the configuration of the microprobe 2 will be described with reference to FIG. The microprobe 2 is used as a probe for analyzing surface irregularities, resistance value or hardness in an atomic order to micron size area such as AFM (Atomic Force Microscope) or STM (Scanning Tunneling Microscope), or at the atomic order or micron. Used as a processing probe for the surface layer of the order. The microprobe 2 includes a base 4, an intermediate layer 6 provided on the base 4, and a probe 8 provided on the intermediate layer 6 and made of diamond. The base 4 is a member that performs fine operations in AFM, STM, and the like, and is made of a material such as silicon, Cu, or SiO ₂ that is different from diamond. The shape of the substrate 4 may be an elongated rod or a thin plate. The intermediate layer 6 is provided for bonding the base body 4 and the probe 8, and the bonding strength between the base body 4 and the probe 8 is higher than when the intermediate layer 6 is not provided. The intermediate layer 6 is made of a metal material or a resin material. When the intermediate layer 6 is made of a metal material, the intermediate layer 6 is made of any one of Ti, Zr, and Hf, or a plurality of films made of such a metal material are laminated. The probe 8 has a base end 10 connected to the intermediate layer 6 and a sharp tip 12 spaced from the base end 10 along the axis J1. The shape of the probe 8 may be either a pyramid or a cone.

  The tip diameter of the tip 12 is 0.5 μm or less. If such a small tip diameter is used, a fine portion can be examined. The tip diameter corresponds to the diameter of a sphere virtually provided in the tip. Also, a first aspect ratio T1 obtained by dividing the cross-sectional width L2 (1 μm, the same applies hereinafter) of the probe 8 in the vicinity of the tip 12 and crossing the axis J1 by the length L1 from the tip 12 to this cross-section. L2 / L1, the same applies hereinafter) is 0.3 or more, and the width L4 of the base end 10 is a line segment connecting the base end 10 and the front end 12 (a line segment included in the axis J1). The second aspect ratio T2 (the value of L4 / L3, the same shall apply hereinafter) divided by the length L3 is 0.36 or more. In addition, it is also possible to use an adhesive (a resin-based adhesive, solder, etc., and so on) without using the intermediate layer 6. The tip 12 may be doped with B (boron) or P (phosphorus). In this case, the tip 12 has conductivity.

  The embodiment according to the present invention may be a microprobe 14 shown in FIG. Hereinafter, the configuration of the microprobe 14 will be described with reference to FIG. The microprobe 14 has the same configuration as the microprobe 2 except for the probe 16. The microprobe 14 includes a substrate 4, an intermediate layer 6 provided on the substrate 4, and a probe 16 provided on the intermediate layer 6 and made of diamond. The probe 16 has a substrate region 18 connected to the intermediate layer 6 and a protrusion 20 provided on the substrate region 18. The board | substrate area | region 18 and the processus | protrusion 20 may be comprised integrally, and may be joined after forming separately. The probe 16 has a proximal end 22 and a distal end 24. The proximal end 22 is a connection surface between the probe 16 and the intermediate layer 6, and the distal end 24 corresponds to the distal end of the protrusion 20. The tip diameter D of the tip 24 is 0.5 μm or less. The first aspect ratio T1 obtained by dividing the width L2 of the cross section of the projection 20 near the tip 24 and crossing the axis J1 by the length L1 from the tip 24 to this cross section is 0.3 or more and 0.71 or less, A second aspect ratio T2 obtained by dividing the width L4 of the base end 22 by the length L3 of a predetermined line segment (line segment included in the axis J1) connecting the front end 24 and the base end 22 is 0.36 or more. It is also possible to use an adhesive such as a resin without using the intermediate layer 6. In this case, the first aspect ratio T1 is 0.71 or less and the second aspect ratio T2 is 1.1 or more, or the first aspect ratio T1 is 0.3 or more and 0.71 or less and the second aspect ratio. The ratio T2 is 1.1 or more. The tip 24 may be doped with B (boron) or P (phosphorus). In this case, the tip 24 has conductivity.

  The embodiment according to the present invention may be a microprobe 26 shown in FIG. Hereinafter, the configuration of the microprobe 26 will be described with reference to FIG. The microprobe 26 has the same configuration as the microprobe 2 except for the probe 28. The probe 28 includes a protrusion 30 and a substrate region 32, and the protrusion 30 is formed on the substrate region 32. The protrusion 30 and the substrate region 32 are integrally formed. The distal end 34 of the probe 28 corresponds to the distal end of the protrusion 30, and the proximal end 36 of the probe 28 corresponds to the bottom surface of the substrate region 32. The joint surface between the protrusion 30 and the substrate region 32 is smaller than the bottom surface (base end 36) of the substrate region 32.

  The tip diameter of the tip 34 is 0.5 μm or less. The first aspect ratio T1 obtained by dividing the width L2 of the cross section of the probe 28 (protrusion 30) in the vicinity of the tip 34 and crossing the axis J1 by the length L1 from the tip 34 to this cross section is 0.3 or more. The second aspect ratio T2 obtained by dividing the width L4 of the proximal end 36 by the length L3 of the line segment connecting the proximal end 36 and the distal end 34 (the line segment included in the axis J1) is 0.71 or less. .36 or more. It is also possible to use an adhesive such as a resin without using the intermediate layer 6. In this case, the first aspect ratio T1 is 0.71 or less and the second aspect ratio T2 is 1.1 or more, or the first aspect ratio T1 is 0.3 or more and 0.71 or less and the second aspect ratio. The ratio T2 is 1.1 or more. The tip 34 may be doped with B (boron) or P (phosphorus), and in this case, the tip 34 has conductivity.

  Further, the embodiment according to the present invention may be a microprobe 38 shown in FIG. Hereinafter, the configuration of the microprobe 38 will be described with reference to FIG. The microprobe 38 has the same configuration as the microprobe 2 except for the substrate 40. The substrate 40 has a first substrate region 42 and a second substrate region 44 and has the same function as the substrate 4. A first substrate region 42 is provided on the second substrate region 44, an intermediate layer 6 is provided on the first substrate region 42, and a probe 8 is provided on the intermediate layer 6. . The first base region 42 is made of, for example, silicon.

  The tip diameter of the tip 12 is 0.5 μm or less. A first aspect ratio T1 obtained by dividing the width L2 of the cross section of the probe 8 near the tip 12 and crossing the axis J1 by the length L1 from the tip 12 to this cross section is 0.3 or more and 0.71 or less. The second aspect ratio T2 obtained by dividing the width L4 of the base end 10 by the length L3 of the line segment connecting the base end 10 and the front end 12 (line segment included in the axis J1) is 0.36 or more. is there. It is also possible to use an adhesive such as a resin without using the intermediate layer 6. In this case, the first aspect ratio T1 is 0.71 or less and the second aspect ratio T2 is 1.1 or more, or the first aspect ratio T1 is 0.3 or more and 0.71 or less and the second aspect ratio. The ratio T2 is 1.1 or more. The tip 12 may be doped with B (boron) or P (phosphorus). In this case, the tip 12 has conductivity.

  The embodiment according to the present invention may be a microprobe 46 shown in FIG. Hereinafter, the configuration of the microprobe 46 will be described with reference to FIG. The microprobe 46 includes a base body 48 and a probe 50 provided on the base body 48 and made of diamond. The probe 50 has a base end 52 connected to the base 48 and a sharp tip 54 spaced from the base end 52 along the axis J1. The probe 50 has a mesa-shaped substrate region 56 connected to the base 48 and a protrusion 58 provided on the substrate region 56. On the surface of the substrate region 56 (the surface opposite to the base end 52), a step is provided with the protrusion 58 as a boundary. This step may have the same height around the periphery of the protrusion 58 (although the step is slightly different on the left and right sides of the protrusion 58 on the surface of the substrate region 56, this step is large) Alternatively, there may be almost no steps), and the projections 58 may have different heights before and after the left and right. This difference in level difference is derived from a microprobe manufacturing method (see FIG. 9), which will be described later, and is formed by etching each of the four side surfaces of the pyramidal protrusion 150 shown in FIG. The substrate 48 has a first substrate region 60 and a second substrate region 62 and has the same function as the substrate 4. A first substrate region 60 is provided on the second substrate region 62, and a probe 50 is provided on the first substrate region 60. The first base region 60 is made of a metal such as Ir or Pt. The probe 50 preferably uses a shape formed by crystal growth of diamond. That is, diamond is known to form a regular hexahedron, regular octahedron, or hexahedron when crystal is grown. The apex of this shape is the tip 54, and the vicinity of the tip 54 is the FIB (Focused Ion). The shape of the probe 50 shown in FIG. 3A can be formed by processing using (Beam) or the like.

  The tip diameter of the tip 54 is 0.5 μm or less. The first aspect ratio T1 obtained by dividing the width L2 of the cross section of the probe 50 (protrusion 58) in the vicinity of the tip 54 and crossing the axis J1 by the length L1 from the tip 54 to this cross section is 0.3 or more. It is. The second aspect ratio T2 obtained by dividing the width L4 of the base end 52 by the length L3 of the line segment (line segment included in the axis J1) connecting the base end 52 and the front end 54 is preferably 1.1 or more. Since the apex of the regular hexahedron, regular octahedron, hexahedron, etc. of the diamond crystal can be used for the tip 54, 0.7 in the case of regular octahedron and 2 in the case of regular hexahedron are effective. The tip 54 may be doped with B (boron) or P (phosphorus). In this case, the tip 54 has conductivity.

  The embodiment according to the present invention may be a microprobe 64 shown in FIG. Hereinafter, the configuration of the microprobe 64 will be described with reference to FIG. The microprobe 64 includes a base body 48 and a probe 66 provided on the base body 48 and made of diamond. The probe 66 has a base end 68 connected to the base body 48 and a sharp tip 70 spaced from the base end 68 along the axis J1. The probe 66 has a mesa-shaped substrate region 72 connected to the base 48 and a protrusion 74 provided on the substrate region 72. The ridge line of the protrusion 74 protruding from the substrate region 72 may be substantially perpendicular to the surface of the substrate region 72. Further, the protrusion 74 may have a shape that protrudes while gently curving from the surface of the substrate region 72. In this case, the strength of the protrusion 74 is improved. Further, as will be described in the description of the microprobe manufacturing method described later, the protrusion 74 may have a shape that protrudes partially or entirely from the surface of the substrate region 72 while drawing a gentle curve.

  The tip diameter of the tip 70 is 0.5 μm or less. The first aspect ratio T1 obtained by dividing the width L2 of the cross section of the probe 66 (protrusion 74) in the vicinity of the tip 70 and crossing the axis J1 by the length L1 from the tip 70 to this cross section is 0.3 or more. It is. The second aspect ratio T2 obtained by dividing the width L4 of the base end 68 by the length L3 of the line segment connecting the base end 68 and the front end 70 (line segment included in the axis J1) is preferably 1.1 or more. Since the apex of the regular hexahedron, regular octahedron, hexahedron, etc. of the diamond crystal can be used for the tip 54, 0.7 in the case of regular octahedron and 2 in the case of regular hexahedron are effective. The tip 70 may be doped with B (boron) or P (phosphorus). In this case, the tip 70 has conductivity.

  Moreover, the embodiment according to the present invention may be a microprobe 76 shown in FIG. Hereinafter, the configuration of the microprobe 76 will be described with reference to FIG. The microprobe 76 includes a base 4, an intermediate layer 6 provided on the base 4, and a probe 78 provided on the intermediate layer 6 and made of diamond. The probe 78 has a mesa-shaped substrate region 80 connected to the intermediate layer 6 and a plurality (four in the embodiment) of protrusions 82 provided on the substrate region 80. The board | substrate area | region 80 and the processus | protrusion 82 may be comprised integrally, and may be joined after forming separately. The substrate region 80 has a connection surface 84 (a base end of the probe 78) connected to the intermediate layer 6 and a surface 86 located on the opposite side of the connection surface 84. The protrusion 82 has a conductive portion 90 that extends from the tip 88 to the surface 86. The conductive portion 90 is provided for each protrusion 82 and is electrically insulated from each other. The tip diameter D of the tip 88 is 0.5 μm or less. A first aspect ratio T1 obtained by dividing the width L2 of the cross section of the projection 82 near the tip 88 and crossing the axis J1 by the length L1 from the tip 88 to this cross section is 0.3 or more and 0.71 or less, The width L4 of the connection surface 84 of the substrate region 80 connected to the intermediate layer 6 is divided by the length L3 of a predetermined line segment (a line segment included in the axis J1) connecting the tip end 88 of the protrusion 82 and the connection surface 84. Further, the second aspect ratio T2 is such that the apex of the regular hexahedron, regular octahedron, hexahedron, etc. of the diamond crystal can be used for the tip 88, so that the effective ratio from 0.7 for the regular octahedron to 2 for the regular hexahedron is effective. is there.

  It is also possible to use an adhesive such as a resin without using the intermediate layer 6. In this case, the first aspect ratio T1 is 0.3 or more. The second aspect ratio T2 obtained by dividing the width L4 of the base end 52 by the length L3 of the line segment (line segment included in the axis J1) connecting the base end 52 and the front end 54 is preferably 1.1 or more. Since the apex of the regular hexahedron, regular octahedron, hexahedron, etc. of the diamond crystal can be used for the tip 54, 0.7 in the case of regular octahedron and 2 in the case of regular hexahedron are effective. The tip 88 may be doped with B (boron) or P (phosphorus). In this case, the tip 88 has conductivity.

  Further, the embodiment according to the present invention may be a microprobe 92 shown in FIGS. 4 (A) and 4 (B). 4A is a plan view, and FIG. 4B is a side view. The microprobe 92 is a microprobe for evaluating Vickers hardness. The microprobe 92 includes a base 4, an intermediate layer 6 provided on the base 4, and two probes 8 formed on the intermediate layer 6 and made of diamond. It is also possible to use an adhesive such as a resin without using the intermediate layer 6.

  The embodiment according to the present invention may be the microprobe 94 shown in FIGS. 4C and 4D. FIG. 4C is a plan view, and FIG. 4D is a side view. Hereinafter, the configuration of the microprobe 94 will be described with reference to FIGS. 4C and 4D. The microprobe 94 is a microprobe for measuring four terminals. The microprobe 94 includes a base 4, an intermediate layer 6 provided on the base 4, and a probe 96 made of diamond provided on the intermediate layer 6. The probe 96 has a substrate region 98 connected to the intermediate layer 6 and four conductive projections 100 provided on the substrate region 98, and the four projections 100 are insulated from each other. ing. The board | substrate area | region 98 and the four protrusion 100 may be comprised integrally, and may be joined after forming separately. The substrate region 98 has a connection surface 102 (a base end of the probe 96) connected to the intermediate layer 6 and a surface 104 located on the opposite side of the connection surface 102. Four conductive portions 106 are formed on the surface 104. Each conductive portion 106 is electrically connected to each of the protrusions 100, but is electrically insulated from each other.

  In addition, each conductive portion 106 is electrically connected to a conductive wire 107. The protrusion 100 is diamond doped with B (boron) or P (phosphorus), and the conductive portion 106 is a diamond region doped with B or the like, or a metal film. It is desirable that the doping concentration of the conductive portion 106 is lower as the concentration is higher. The tip diameter D of the tip 108 is 0.5 μm or less. A first aspect ratio T1 obtained by dividing the width L2 of the cross section of the protrusion 100 in the vicinity of the tip 108 and crossing the axis J1 by the length L1 from the tip 108 to this cross section is 0.3 or more and 0.71 or less, The width L4 of the connection surface 102 of the substrate region 98 connected to the intermediate layer 6 is divided by the length L3 of a predetermined line segment (a line segment included in the axis J1) connecting the tip 108 of the protrusion 100 and the connection surface 102. The second aspect ratio T2 is not less than 0.36 and not more than 0.52. It is also possible to use an adhesive such as a resin without using the intermediate layer 6.

Next, with reference to FIG. 5, the manufacturing method of the microprobe according to the embodiment will be described. The microprobe 38 is manufactured by the manufacturing method shown in FIG. First, a silicon layer 110 and a diamond layer 112 provided over the silicon layer 110 are prepared (FIG. 5A). Diamond layer 112 is ground diamond. After that, a mask 114 is provided on the diamond layer 112 by photolithography at equal intervals (dot size diameter of about 1 μm to 4 μm) (FIG. 5B). The mask 114 is made of, for example, SiO ₂ and has a thickness of about 1 μm to ₂ μm. The mask 114 is formed by dry etching using a CF ₄ gas. Thereafter, the diamond layer 112 is etched by RIE (Reactive Ion Etching) using a CF ₄ / O ₂ -based gas to form a convex portion 116 (FIG. 5C). The convex part 116 corresponds to the probe 8. After that, a resist 118 (for example, a resin that can be removed with alcohol) that protects the convex portion 116 is formed on the silicon layer 110, and a support plate 120 is provided on the resist 118 (FIG. 5D). Thereafter, after removing the silicon layer 110 from the resist 118, an intermediate layer 122 is provided on the resist 118 (FIG. 5E).

  The intermediate layer 122 is preferably made of any metal material such as Ti, Zr, Hf, or a plurality of films made of such metal materials. Thereafter, after the silicon layer 124 is provided on the intermediate layer 122, a groove 126 is provided around the convex portion 116 for each of the convex portions 116 in the silicon layer 124 (FIG. 5F). After that, the base 128 is attached onto the silicon layer 124 using an adhesive (resin adhesive, solder, etc., the same applies hereinafter) (FIG. 5G). The base 128 is attached to the silicon layer 124 so as to overlap the convex portion 116 in plan view. A plurality of substrates 128 may be attached to the silicon layer 124 at once, or the substrates 128 may be attached one by one. After that, when the resist 118 is removed after performing a dicing process or the like, the microprobe 38 is obtained (FIG. 5H). Further, a metal such as Ni or Au may be deposited on the intermediate layer 122 without providing the silicon layer 124 or may be plated. In this case, if patterning is performed in accordance with the arrangement of the protrusions 116 (protrusions), there is no need to perform dicing later, which is efficient. Note that the substrate 128 may be directly attached onto the intermediate layer 122 without providing the silicon layer 124 or a layer formed by vapor deposition or plating of Ni or Au. In this case, the microprobe 2 and the microprobe 26 are obtained. Note that an adhesive such as a resin can be used without using the intermediate layer 122.

Next, another method for manufacturing the microprobe according to the embodiment will be described with reference to FIG. The microprobe 14 is manufactured by the manufacturing method shown in FIG. First, a silicon layer 110 and a diamond layer 112 provided over the silicon layer 110 are prepared (FIG. 6A). Diamond layer 112 is ground diamond. Thereafter, a mask 114 is provided on the diamond layer 112 by photolithography at equal intervals (dot size diameter is about 3 μm) (FIG. 6B). Thereafter, the diamond layer 112 is etched by RIE using a CF ₄ / O ₂ -based gas to form a diamond layer 130 (FIG. 6C). The diamond layer 130 has protrusions 132 formed on the surface. The position of the protrusion 132 corresponds to the location where the mask 114 was provided. After that, a mask 134 (for example, a material such as SiO ₂ or Al is used) is provided for each protrusion 132 so as to cover each protrusion 132 (FIG. 6D). The mask 134 is formed by wet etching using an acidic solution, an alkaline solution, or the like, or dry etching using a CF ₄ (for SiO ₂ ) or Cl ₂ (for Al) gas.

Thereafter, the diamond layer 130 is etched by RIE using a CF ₄ / O ₂ -based gas to form a convex portion 136 (FIG. 6E). The convex portion 136 corresponds to the probe 16 of the microprobe 14 having the protrusion 20 and the substrate region 18. After that, a resist 118 that protects the projection 136 is formed on the silicon layer 110 (FIG. 6F). Thereafter, after the silicon layer 110 is removed from the resist 118, an intermediate layer 122 is provided over the resist 118 (FIG. 6G). After that, the base 128 is attached to the intermediate layer 122 using an adhesive such as a resin (FIG. 6H). A plurality of base bodies 128 may be attached to the intermediate layer 122 at once, or the base bodies 128 may be attached one by one. Thereafter, when the resist 118 is removed after performing a dicing process or the like, the microprobe 14 is obtained (FIG. 6I). Note that an adhesive such as a resin can be used without using the intermediate layer 122.

Next, another manufacturing method of the microprobe according to the embodiment will be described with reference to FIG. The microprobe 14 is manufactured by the manufacturing method shown in FIG. First, a silicon layer 110 and a diamond layer 112 provided over the silicon layer 110 are prepared (FIG. 7A). Diamond layer 112 is ground diamond. Thereafter, a mask 114 is provided on the diamond layer 112 at a regular interval (dot size diameter of about 1 μm to 4 μm) by photolithography, and then a mask 138 is provided for each mask 114 so as to cover each mask 114 (for example, , A material such as SiO ₂ or Al is used) (FIG. 7B). The mask 138 is formed by wet etching using an acidic solution or an alkaline solution, or dry etching using a CF ₄ (for SiO ₂ ) or Cl ₂ (for Al) gas. Thereafter, the diamond layer 112 is etched by RIE using a CF ₄ / O ₂ -based gas to form a diamond region 140 (FIG. 7C). Thereafter, after removing the mask 138 (FIG. 7D), the diamond region 140 is etched by RIE using a CF ₄ / O ₂ -based gas to form a convex portion 136 (FIG. 7E). . After that, a resist 118 that protects the convex portion 136 is formed over the silicon layer 110 (FIG. 7F).

  Thereafter, after the silicon layer 110 is removed from the resist 118, an intermediate layer 122 is provided on the resist 118 (FIG. 7G). After that, the base 128 is attached to the intermediate layer 122 using an adhesive such as a resin (FIG. 7H). A plurality of base bodies 128 may be attached to the intermediate layer 122 at once, or the base bodies 128 may be attached one by one. Thereafter, when the resist 118 is removed after performing a dicing process or the like, the microprobe 14 is obtained (FIG. 7I). Note that an adhesive such as a resin can be used without using the intermediate layer 122. Further, in the step shown in FIG. 7G, it is possible to cut out a region including the convex portion 136 by dicing without removing the silicon layer 110 from the resist 118 (FIGS. 5F to 5). (See each step shown in (H).) In this case, although the intermediate layer 122 does not exist between the convex portion 136 and the base body 128, a relatively large bonding surface between the convex portion 136 and the base body 128 can be ensured, so that the projection thickness of the convex portion 136 is maintained. However, the strength of the protrusions of the convex portion 136 can be sufficiently maintained. Furthermore, the manufacturing process can be shortened, which is efficient.

Next, another manufacturing method of the microprobe according to the embodiment will be described with reference to FIG. The microprobe 14 is manufactured by the manufacturing method shown in FIG. First, the diamond layer 112 is prepared. Diamond layer 112 is ground diamond. Thereafter, a mask 114 is provided on the diamond layer 112 by photolithography at equal intervals (dot size diameter of about 1 μm to 4 μm), and then a mask 138 is provided for each mask 114 so as to cover each mask 114 (FIG. 8 (B)). Thereafter, the diamond layer 112 is etched by RIE using CF ₄ / O ₂ -based gas to form a diamond region 140 (FIG. 8C). The position of the diamond region 140 corresponds to the location where the mask 138 was provided. Thereafter, after removing the mask 138 (FIG. 8D), the diamond region 140 is etched by RIE using a CF ₄ / O ₂ -based gas to form a convex portion 136 (FIG. 8E). . Thereafter, a resist 118 is formed on the diamond layer 142 so as to cover the convex portion 136, and a support plate 120 is formed on the resist 118 (FIG. 8F). Thereafter, the diamond layer 142 is etched by RIE using CF ₄ / O ₂ -based gas to leave a convex portion 136, and the intermediate layer 122 is provided on the resist 118 including the bottom surface of the convex portion 136. (FIG. 8G).

  After that, the base 128 is attached to the intermediate layer 122 using an adhesive such as a resin (FIG. 8H). A plurality of base bodies 128 may be attached to the intermediate layer 122 at once, or the base bodies 128 may be attached one by one. Thereafter, when the resist 118 is removed after performing a dicing process or the like, the microprobe 14 is obtained (FIG. 8I). Note that an adhesive such as a resin can be used without using the intermediate layer 122. Further, without removing the diamond layer 142 in the step shown in FIG. 8G, it is possible to cut out and use a region including the convex portion 136 by laser processing. In this case, although the intermediate layer 122 does not exist between the convex portion 136 and the base body 128, the convex portion 136 and the base body are integrally formed. Therefore, while maintaining the thinness of the projection of the convex portion 136, the convex portion 136 is formed. The strength of the protrusion of the portion 136 can also be sufficiently maintained. Furthermore, the manufacturing process can be shortened, which is efficient.

  Next, another manufacturing method of the microprobe according to the embodiment will be described with reference to FIG. The microprobe 46 (or microprobe 64) is manufactured by the manufacturing method shown in FIG. First, for example, a substrate 144 such as Ir or Pt is prepared, and the following process (hereinafter referred to as diamond seeding process) is performed on the surface 146 of the substrate 144 (FIG. 9A). The diamond seeding process is a process for growing diamond in a predetermined orientation on the surface 146 of the substrate 144. For example, a process for growing diamond on surface 146, such as rubbing diamond powder against surface 146, scratching surface 146 with diamond powder, or attaching diamond powder to surface 146, or hydrogen It means a treatment for growing diamond in a predetermined orientation, such as applying a positive bias to the surface 146 in a gas or methane gas plasma. After that, a mask 148 is provided on the surface 146 (FIG. 9B). And the process which negates the effect of said diamond seeding process is given with respect to the area | region which is not covered with the mask 148 among the surfaces 146 (FIG.9 (C)).

  Thereafter, after removing the mask 148, diamond is grown by growth parameter control in the region covered with the mask 148, thereby forming a protrusion 150 on the substrate 144 (FIG. 9D). In this case, the diamond grows in a pyramid shape having a regular octahedron apex under the condition of growing fast in the (100) direction, and becomes a pyramid shape having a regular hexahedron apex under the condition of growing fast in the (111) direction. Under the condition that diamond grows and grows fast in the (110) direction, the diamond grows in a pyramidal shape having a hexahedral shape. Thereafter, a groove 152 is provided on the surface of the substrate 144 (the surface on which the protrusions 150 are formed). The groove 152 is provided for each protrusion 150 around the protrusion 150. Then, the protrusion 150 is etched by FIB to form the probe 50 (or the probe 66) (FIG. 9E). Thereafter, a resist 118 is provided on the substrate 144 so as to cover the probe 50 (FIG. 9F). After that, the substrate 144 is etched until the groove 152 is exposed (FIG. 9G). By this etching, the substrate 144 becomes the substrate 154. After that, the base 128 is attached to the substrate 154 using an adhesive such as a resin (FIG. 9H). The base 128 is attached to the substrate 154 so as to overlap the probe 50 in plan view. A plurality of base bodies 128 may be attached to the substrate 154 at once, or the base bodies 128 may be attached one by one. Thereafter, when the resist 118 is removed, the microprobe 46 (or the microprobe 64) is obtained (FIG. 9I). Note that the step of processing the tip using the FIB can be performed after the step shown in FIG. 9I instead of the step shown in FIG.

  Next, with reference to FIG. 10, the manufacturing method of the microprobe which concerns on embodiment is demonstrated. The probe 78 of the microprobe 76 is manufactured by the manufacturing method shown in FIG. First, a quadrangular pyramid-shaped diamond member 156 is prepared (FIG. 10A). Thereafter, the four side surfaces of the diamond member 156 are etched using FIB to form protrusions 158 (FIGS. 10B to 10D). The protrusion 158 protrudes substantially at the center of the mesa-shaped substrate region 80. After that, the protrusion 158 is etched using FIB to form four protrusions 100 (FIGS. 10E and 10F). Then, a region other than the region where the conductive portion 90 is scheduled to be formed is covered with a mask, and then hydrogen plasma treatment is performed. A conductive layer is formed on the surface subjected to FIB, but the conductive layer is removed except for the region covered with the mask by hydrogen plasma treatment, and the conductive layer remains only in the region covered with the mask. Therefore, when the mask is removed thereafter, the conductive portion 90 is formed (FIG. 10G). FIG. 10H shows a cross section of the probe 78 taken along the line II shown in FIG.

Next, another microprobe manufacturing method will be described with reference to FIG. The microprobe 160 is manufactured by the manufacturing method shown in FIG. In the microprobe 160, the probe 16 is connected to the base body 40 without an intermediate layer. Although an intermediate layer does not exist at this connection interface, since a width L4 (see FIG. 1) larger than the width L2 and width L8 shown in FIG. Very low. First, a silicon layer 110 and a diamond layer 112 provided over the silicon layer 110 are prepared (FIG. 11A). Diamond layer 112 is ground diamond. Thereafter, a mask 114 is provided on the diamond layer 112 by photolithography at equal intervals (dot size diameter is about 3 μm) (FIG. 11B). Thereafter, the diamond layer 112 is etched by RIE using a CF ₄ / O ₂ -based gas to form the diamond layer 130 (FIG. 11C). The diamond layer 130 has protrusions 132 formed on the surface. The position of the protrusion 132 corresponds to the location where the mask 114 was provided. After that, a mask 134 is provided for each protrusion 132 so as to cover each protrusion 132 (FIG. 11D). Thereafter, the diamond layer 130 is etched by RIE using a CF ₄ / O ₂ -based gas to form a convex portion 136 (FIG. 11E). The convex portion 136 corresponds to the probe 16.

  Thereafter, a groove 126 is provided for each convex portion 136 around the convex portion 136 on the surface of the silicon layer 110 (surface on which the convex portion 136 is provided) using a photolithograph (FIG. 11F). After that, a resist 118 that protects the protrusion 136 is formed on the silicon layer 110, and the silicon layer 110 is etched from the back surface until the groove 126 is exposed (FIG. 11G). By this etching, the silicon layer 110 becomes the silicon layer 124. After that, the base 128 is attached to the silicon layer 124 by using an adhesive such as a resin (FIG. 11H). The base 128 is attached to the silicon layer 124 so as to overlap the convex portion 136 in plan view. A plurality of substrates 128 may be attached to the silicon layer 124 at once, or the substrates 128 may be attached one by one. Thereafter, when the resist 118 is removed, the microprobe 160 is obtained (FIG. 11I). Note that if a thick groove is formed in the silicon layer 110, a region including the convex portion 136 (microprobe 160) can be taken out without attaching the base 128 in the step shown in FIG. In this case, since the base body 128 and the silicon layer 124 are integrally formed, an adhesive is not necessary and the process is simplified.

  Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to the following examples. First, it demonstrates based on FIG. FIG. 12 shows the verification results for each item of “Availability of fine part work”, “Situation of tip” and “Situation of probe” obtained by actually performing the work using the probes P1 to P7. Is a table showing probe P1 to probe P7. The probes P1 to P6 have the same shape as the probe 8 or the probe 28, and are connected to the first base region 42 through the intermediate layer 6 in the same manner as the microprobe 2 and the microprobe 26. (See FIGS. 1A and 2A.) The intermediate layer 6 was formed by evaporating Ti, Cu containing Ti, or the like on the first base region 42. When a single metal such as Al or Cu not containing Ti was used, the durability was inferior to that of a metal containing Ti, but this verification result was good. The probe P7 has the same shape as the probe 8 or the probe 28, but has a configuration in which the probe P7 is directly connected to the base body 4 without the intermediate layer 6 interposed therebetween. The probes P1, P2 and P4 have a tip diameter D of 0.5 μm or less, a first aspect ratio T1 of 0.3 to 0.71, and a second aspect ratio T2 of 0.36 to 0.52. The other probes P3, P5 to P7 are comparative examples. Only the probes P1, P2 and P4 of the embodiment are “possible” for “workability of fine part”, “not broken” for “tip state”, and “broken” for “probe situation”. It was. Therefore, it can be seen that the probes P1, P2 and P4 of the embodiment are sharp probes having sharp tips capable of working with fine portions, and having improved strength. Further, the probe P8 has the same configuration as that of the probe P4, but the probe P8 bonded to the substrate with an adhesive instead of the intermediate layer is also verified, and all the evaluation items shown in FIG. In each of the “tip situation” and “probe situation” items), the same result as that of the probe P4 was obtained. The probe P8 is inferior to the probe P4 in terms of durability at a high temperature (200 degrees Celsius or higher), but the performance at room temperature is sufficiently good like the probe P4. Further, the structure of the probe 8 and the probe 28 has a relatively small joint surface (width L4) with the base 4 made of a different material (meaning that the material is different from diamond, the same applies hereinafter). When there was no intermediate layer serving as a buffer, the probe could be easily taken, resulting in a failure.

  Next, a description will be given based on FIG. 13 (A) and 13 (B) show items of “probability of work on fine portion” and “probe status” obtained by actually performing the work using the probe R1 to the probe R7. It is a table | surface which shows the verification result with respect to every probe R1-probe R7. Probes R1 to R4 shown in FIG. 13A have the same shape as the probe 16 (convex portion 136) shown in FIG. Since the probe 16 (convex portion 136) shown in FIG. 11 (I) is bonded onto the second base region 44 (silicon layer 124) without an intermediate layer made of metal or the like, such an intermediate layer is formed. The bonding strength with the second base region 44 (silicon layer 124) is relatively smaller than that of the structure using. However, since the probe 16 (convex portion 136) shown in FIG. 11I has a relatively large joint surface with the second base region 44 (silicon layer 124), the second base region 44 (silicon layer 124) and As a result, the bonding strength of is large. Probes R5 to R7 shown in FIG. 13B have the same shape as the probe 16, and have a configuration in which the probe 4 is connected to the substrate 4 through the intermediate layer 6 in the same manner as the microprobe 14 (hereinafter referred to as “probe”). (The reference numerals shown in FIG. 1B are used to describe the probes R5 to R7 shown in FIG. 13B.)

  The tip diameter D of the probe R1 to the probe R7 is smaller than 0.1 μm, the length L1 is 2 μm or more and 2.5 μm or less, and the first aspect ratio T1 is in the range of 0.3 or more and 0.71 or less. Was in. That is, the tips of the probe R1 to the probe R7 were as good as in Example 1. On the other hand, the second aspect ratio T2 of the probe R1 to the probe R7 was 0.17 or more and 0.38 or less. In particular, the probe R6 did not break because the second aspect ratio T2 was 0.24. On the other hand, the probe P5 of Example 1 was broken although the second aspect ratio T2 was 0.24, and the probe R7 was broken although the second aspect ratio T2 was 0.17. The probe R6 is made of diamond in which the substrate region 18 and the protrusion 20 are integrally formed. This is because the bonding strength between the protrusion 20 and the substrate region 18 is higher than that of the probe P5 and the probe R7. Conceivable. Furthermore, the tip P1 of the probe P1 of Example 1 did not break even when the second aspect ratio T2 was 0.36 or more, but the probe R1 and the probe R2 have a third aspect ratio T3. Even at 0.47 and 0.78, they were detached from the substrate. This is considered to be due to the fact that the probe R1 and the probe R2 are not joined to the substrate via an intermediate layer made of metal or the like. However, it was confirmed that if the third aspect ratio T3 of 1.1 or more was secured as in the probe R3 and the probe R4, the probe could not be detached from the substrate. That is, like the probe R3 and the probe R4, the third aspect ratio T3 is ensured to be 1.1 so that the probe base R3 made of diamond and the second base region 44 made of a different material from the probe R4 (silicon It was found that the bonding strength with the layer 124) can be maintained. Of course, even if the third aspect ratio T3 is 0.47 as in the probe R5 and the probe R6, an intermediate layer made of metal or the like is used, and a second value of 0.36 or more is used as in the first embodiment. If the aspect ratio was T2, the probe made of diamond (probe R5 and probe R6) did not come off the base made of a different material (base 4).

  While the principles of the invention have been illustrated and described in the preferred embodiments, it will be appreciated by those skilled in the art that the invention can be modified in arrangement and detail without departing from such principles. The present invention is not limited to the specific configuration disclosed in the present embodiment. We therefore claim all modifications and changes that come within the scope and spirit of the following claims. For example, in the case of the microprobe illustrated in FIG. 11I, the silicon layer 124 may be thick and the base 128 may not be provided. In this case, since the base made of the silicon layer 124 becomes a base with sufficient workability, it is not necessary to attach the base 128 to the silicon layer 124. Therefore, the manufacturing process can be facilitated while maintaining the strength of the diamond probe well.

It is sectional drawing which shows the structure of the microprobe which concerns on embodiment. It is sectional drawing which shows the structure of the microprobe which concerns on embodiment. It is sectional drawing which shows the structure of the microprobe which concerns on embodiment. It is sectional drawing which shows the structure of the microprobe which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the microprobe which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the microprobe which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the microprobe which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the microprobe which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the microprobe which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the microprobe which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the microprobe which concerns on embodiment. It is a figure which shows the content of the Example. It is a figure which shows the content of the other Example.

Explanation of symbols

2, 14, 26, 38, 46, 64, 76, 92, 94, 160 ... microprobe, 4, 40, 48, 128 ... substrate, 6, 122 ... intermediate layer, 8, 16, 28, 50, 66, 78, 96 ... probe, 10, 22, 36, 52, 68 ... proximal end, 12, 24, 34, 54, 70, 88, 108 ... tip, 18, 32, 56, 72, 80, 98 ... substrate region , 20, 30, 58, 74, 82, 132, 100, 150, 158... Projection, 42, 60... First substrate region, 44, 62... Second substrate region, 84, 102. 146 ... surface, 90, 106 ... conductive part, 107 ... conductive wire, 116, 136 ... convex part, 110, 124 ... silicon layer, 112, 130, 142 ... diamond layer, 114, 134, 138, 148 ... mask, 118 ... resist, 20 ... support plates, 126,152 ... groove, 140 ... diamond area, 144, 154 ... substrate, 156 ... diamond member, J1 ... shaft.

Claims (6)

A substrate;
An intermediate layer provided on the substrate;
And one or more probes made of diamond provided on the intermediate layer,
The intermediate layer is made of a metal material or a resin material,
The probe has a distal end and a proximal end connected to the intermediate layer,
The tip diameter of the probe is 0.5 μm or less,
The first aspect ratio obtained by dividing the width of the cross section of the probe at a predetermined position near the tip from the tip by the length from the tip to the cross section is 0.3 or more,
The second aspect ratio obtained by dividing the width of the proximal end by the length from the distal end to the proximal end is 0.36 or more. A substrate;
An intermediate layer provided on the substrate;
A probe made of diamond provided on the intermediate layer,
The intermediate layer is made of a metal material or a resin material,
The probe has a substrate region connected to the intermediate layer, and one or a plurality of protrusion regions provided on the substrate region,
The tip diameter of the projection region is 0.5 μm or less,
The first aspect ratio obtained by dividing the width of the cross section of the projection region at a predetermined position near the tip from the tip of the projection region by the length from the tip to the cross section is 0.3 or more and 0.71 or less. ,
The second aspect ratio obtained by dividing the width of the connection surface of the substrate region connected to the intermediate layer by the length from the tip of the projection region to the connection surface is 0.36 or more. Microprobe to do. A substrate;
A probe made of diamond provided on the substrate,
The probe has a substrate region connected to the base body, and one or a plurality of protruding regions provided on the substrate region,
The tip diameter of the projection region is 0.5 μm or less,
The first aspect ratio obtained by dividing the width of the cross section of the projection region at a predetermined position near the tip from the tip of the projection region by the length from the tip to the cross section is 0.71 or less,
The second aspect ratio obtained by dividing the width of the connection surface of the substrate region connected to the base by the length from the tip of the projection region to the connection surface is 1.1 or more. Microprobe. A substrate;
A probe made of diamond provided on the substrate,
The probe has a substrate region connected to the base body, and one or a plurality of protrusion regions provided on the substrate region,
The tip diameter of the projection region is 0.5 μm or less,
The first aspect ratio obtained by dividing the width of the cross section of the projection region at a predetermined position near the tip from the tip of the projection region by the length from the tip to the cross section is 0.3 or more and 0.71 or less. ,
The second aspect ratio obtained by dividing the width of the connection surface of the substrate region connected to the base by the length from the tip of the projection region to the connection surface is 1.1 or more. Microprobe. A substrate;
A probe made of diamond provided on the substrate,
The probe has a mesa-shaped substrate region connected to the base, and one or a plurality of protrusion regions provided on the substrate region,
The tip diameter of the projection region is 0.5 μm or less,
The first aspect ratio obtained by dividing the width of the cross section of the projection region at a predetermined position near the tip from the tip of the projection region by the length from the tip to the cross section is 0.3 or more,
The second aspect ratio obtained by dividing the width of the connection surface of the substrate region connected to the base by the length from the tip of the projection region to the connection surface is 1.1 or more. Microprobe. The microprobe according to any one of claims 1 to 5, wherein the tip has conductivity.

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