JP2008019317A - Oxide phosphor epitaxial film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an oxide phosphor epitaxial film enabling color development of the three primary colors of red, green, and blue which come to the basis of manufacturing a display. <P>SOLUTION: The oxide phosphor epitaxial film is obtained by forming a film on a substrate at a temperature of 600-800°C by epitaxial growth using an oxide phosphor material as a target material by the pulse laser accumulation method and subjecting the film thus formed to heat treatment in oxygen or in the air at 900-1,200°C to improve fluorescence properties. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an oxide phosphor epitaxial thin film, and more particularly, to an oxide phosphor epitaxial thin film capable of emitting three primary colors of red, green, and blue.

  Conventionally, many phosphors such as organic EL and inorganic EL are known. However, there is a problem that the crystallinity is lowered by oxidation and the aging of the fluorescence characteristics is remarkable.

Patent Document 1 discloses a method for producing a double oxide phosphor thin film in which a metal ion is substituted for an inorganic base material such as yttrium aluminate.
Patent Document 2 discloses a method for manufacturing a thin film that emits light by applying a mechanical external force to a material containing a rare earth metal ion or a transition metal ion in an inorganic base material.
Patent Document 3 shows fluorescence characteristics of a polycrystalline Sn perovskite oxide system.
Non-Patent Document 1 shows that red fluorescence characteristics can be obtained when a polycrystalline ASnO ₃ perovskite structure (A = Ca, Sr, Ba) is substituted with Eu ³⁺ .
Non-Patent Document 2 shows that blue fluorescence can be obtained in a polycrystalline Sn-based layered perovskite structure.
Non-Patent Document 3 shows that in the polycrystalline CaSnO ₃ , fluorescence characteristics can be obtained when Tb is substituted.
Non-Patent Document 4 shows that red fluorescence characteristics can be obtained with a polycrystalline layered layered perovskite Sr _{n + 1} TiO _{3n + 1} system.
Non-Patent Document 5 shows that blue-white fluorescence can be obtained by oxygen deficiency for SrTiO ₃ single crystals and thin films.
Non-Patent Document 6 shows that red fluorescence characteristics can be obtained by substituting Pr atoms for polycrystalline SrTiO ₃ .
Non-Patent Document 7 shows that red fluorescence characteristics can be obtained in polycrystalline Pr atom substitution (Ca _x Sr _1-x ) TiO ₃ .
Non-Patent Document 8 shows that a blue fluorescent characteristic of a thin film MHfO ₃ : Tm substitution can be obtained.
Non-Patent Document 9 shows that fluorescence characteristics can be obtained in a BaTiO ₃ thin film substituted with Er atoms.

JP2003-183646 Japanese Patent Laid-Open No. 11-219601 Japanese Patent Application 2005-322286 J. AlloyCompd. Vol.387, pp L1-4 (2005) J. Mater.Sci. Lett., Vol. 11, 1330 (1992) MaterialsChemistry and Physics Vol.93, pp.129-132 (2005) J.J.Appl.Phys.Vol.44, pp.761-764 (2005) Naturematerials Vol 4, 816 (2005) Appl.Phy. Lett Vol 78, 655 (2001) Chem. Mater. Vol 17, 3200 (2005) Appl.Surf. Sci. Vol 197-198, 402 (2002) Appl.Phy. Lett Vol 65, 25 (1994)

As shown in the prior art, it is known that a good phosphor can be obtained in an oxide polycrystal, but the oxide fluorescence that emits three primary colors of red, green, and blue necessary for display production. No body epitaxial thin film is known. In particular, for display applications, the development of EL using thin films is indispensable, and the development of oxide phosphor epitaxial thin films is urgently required.
An object of the present invention is to provide an oxide phosphor epitaxial thin film capable of developing three primary colors of red, green, and blue, which is a basis for display production.

The present invention employs the following means in order to solve the above problems.
The first means is an oxide phosphor epitaxial thin film characterized in that a thin film is formed on a substrate by epitaxial growth at a temperature of 600 ° C. or higher and 800 ° C. or lower by a pulse laser deposition method using an oxide fluorescent material as a target material. It is.
A second means is the oxide phosphor according to the first means, wherein the target material is a polycrystalline target material in which a rare earth element, a transition metal element, an alkaline earth element or the like is substituted with a perovskite structure. It is an epitaxial thin film.
The third means is the first means or the second means, wherein the target material is Sr ₂ (Sn _1-x
Ti _x ) O ₄ : 0.01 ≦ x ≦ 0.1, which is an oxide phosphor epitaxial thin film characterized in that blue fluorescence is obtained.
The fourth means is the first means or the second means, wherein the target material is Pr _y (Ca _x Sr _1-x ) _1-y TiO ₃ : 0.1 ≦ x ≦ 1.0, 0.0005 ≦ y ≦ 0.05 There is an oxide phosphor epitaxial thin film characterized in that red fluorescence is obtained.
The fifth means is the first means or the second means, wherein the target material is (Sr _1-x
Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : 0.01 ≦ x ≦ 0.1, 0.01 ≦ y ≦ 0.2, and an oxide phosphor epitaxial thin film characterized in that red fluorescence is obtained.
A sixth means is the first means or the second means, wherein the target material is {(Ca _1-x
Mg _x ) _1-y Tb _y } SnO ₃ : 0.01 ≦ x ≦ 0.2, 0.001 ≦ y ≦ 0.2, and is an oxide phosphor epitaxial thin film characterized in that green fluorescence is obtained.
A seventh means is that, in the first means or the second means, the target material is (Pr _x Sr _1-x ) SnO ₃ : 0.001 ≦ x ≦ 0.2, and fluorescence having a wavelength of 490 nm ± 10 nm is obtained. This is an oxide phosphor epitaxial thin film.
The eighth means is that in any one of the first means to the seventh means, the thin film is improved in fluorescence characteristics by heat treatment at 900 ° C. or more and 1200 ° C. or less in oxygen or air. It is a characteristic oxide phosphor epitaxial thin film.
A ninth means is the material according to any one of the first to eighth means, wherein the substrate has a perovskite-related structure made of any of SrTiO ₃ , LaAlO ₃ , LaGaO ₃ , LaSrGaO ₄ , or An oxide phosphor epitaxial thin film comprising a cubic or tetragonal material composed of either MgO or MgAl ₂ O ₄ .

  According to the present invention, an oxide phosphor epitaxial thin film having excellent fluorescence characteristics of three primary colors of red, green, and blue can be obtained, and as a result, an electroluminescence device using the oxide phosphor epitaxial thin film can be developed. . Moreover, according to the electroluminescence device using the oxide phosphor epitaxial thin film, it is possible to drive at a low voltage, and thus the system can be miniaturized.

  First, an outline of the production of the oxide phosphor epitaxial thin film according to the present invention will be described. Pulse laser deposition is used for the production of the thin film. The pulsed laser deposition method is expected for industrial application because it can form a thin film of about 500 nm in a short time (typical film formation time is 1 hour). Further, since the film can be formed in an oxygen stream, deterioration of electrical characteristics and fluorescence characteristics due to oxygen deficiency or the like can be extremely reduced during the growth of the oxide thin film. In the pulsed laser deposition method, the target material made of oxide is irradiated with an excimer laser of ArF (wavelength: 193 nm) in low-pressure oxygen of 1 Torr or less, and the target material is turned into plasma to form a plume. A heated substrate is placed on and a thin film is deposited. Cluster growth is dominant at temperatures below 1000 ° C., and the target material can be deposited with its stoichiometric composition.

In the pulsed laser deposition method, the laser irradiation frequency is 8 Hz, and the film formation time is 30 minutes. The distance between the substrate and the target was 32 mm. The laser energy is about 120mJ. As the target material, a polycrystalline target material in which a rare earth element, a transition metal element, or an alkaline earth element is substituted with a perovskite structure is used. In addition, as the substrate, a material having a perovskite-related structure composed of any of SrTiO ₃ , LaAlO ₃ , LaGaO ₃ , LaSrGaO ₄ , or a material having a cubic or tetragonal system composed of any of MgO and MgAl ₂ O ₄ Is used. Here, a SrTiO ₃ (001) single crystal polishing substrate was used as a typical example. The crystal structure of SrTiO ₃ is tetragonal and the lattice constant is 3.905 nm. Since many materials of perovskite oxide have a lattice constant in the vicinity of this material and have good matching, growth of an oxide epitaxial thin film having excellent crystallinity can be expected.

A first embodiment of the present invention will be described with reference to FIGS. Figure 1 shows the oxide phosphor epitaxial thin film, polycrystal, and calculation results when grown at 800 ° C by pulsed laser deposition method using Sr ₂ (Sn _1-x Ti _x ) O ₄ : x = 0.05 as the target material. Fig. 2 shows the x-ray diffraction pattern of the polycrystal obtained, and Fig. 2 shows that the target material is Sr ₂ (Sn _1-x Ti _x ) O ₄ : x = 0.05 at 850 ° C by pulsed laser deposition. Fig. 3 shows the measurement results of the fluorescence characteristics of oxide phosphor epitaxial thin films after growth and after heat treatment at 1000 ° C, 1100 ° C, and 1200 ° C in the atmosphere. Fig. 3 shows Sr ₂ (Sn _1-x Ti _x ) Shows the measurement results of the fluorescence properties of oxide phosphor epitaxial thin films after growth at 800 ° C by pulsed laser deposition using O ₄ : x = 0.05, and after heat treatment at 1000 ° C, 1100 ° C, and 1200 ° C in air FIG, _{4, Sr 2 (Sn 1-x} Ti x) O 4 as the target material: with x = 0.05, pulsed laser deposition Fig. 5 shows the measurement results of the fluorescence characteristics of oxide phosphor epitaxial thin films after growth at 600 ° C and after heat treatment at 1000 ° C in the air, and Fig. 5 summarizes the measurement results of the fluorescence characteristics of Figs. FIG.

Patent Document 3 discloses that a polycrystalline Sn perovskite oxide provides red, blue, and green fluorescence characteristics, and that a polycrystalline Sr ₂ (Sn _1-x Ti _x ) O ₄ : 0.01 ≦ x ≦ 0.1 Shows that blue fluorescence is obtained. Based on these findings, the oxide phosphor epitaxial thin film obtained by the invention of this example is obtained by using a pulse laser deposition method with Sr ₂ (Sn _1-x Ti _x ) O ₄ : 0.01 ≦ x ≦ 0.1 as a target material. The film is formed on the substrate by epitaxial growth at a temperature of 600 ° C. or higher and 800 ° C. or lower.

  In the following, a case where x = 0.05 is obtained in which the best fluorescence characteristic is obtained in the fluorescence characteristics of the chemical composition. A target having the above chemical composition was formed on the substrate by epitaxial growth at a substrate temperature of 600 ° C., 800 ° C., and 850 ° C. by a pulse laser deposition method. Thereafter, an x-ray diffraction pattern was measured in order to investigate the crystal structure of the formed oxide phosphor epitaxial thin film. As a result, (110) thin films were formed at all temperatures, confirming epitaxial growth.

  FIG. 1 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C. as a typical example. As shown in FIG. On the other hand, since only the (110) orientation appears in the thin film pattern, it can be seen that the thin film pattern is epitaxially grown in the (110) orientation.

  FIG. 2 is a diagram showing measurement results of fluorescence characteristics after growing an oxide phosphor epitaxial thin film at 850 ° C. and after heat treatment at 1000 ° C., 1100 ° C., and 1200 ° C. in the atmosphere. It can be seen that fluorescence characteristics are obtained at a wavelength of 410 nm in each. In particular, since the fluorescence characteristics are remarkably improved by the heat treatment at 1000 ° C., the heat treatment at 1000 ° C. is considered optimal.

  FIG. 3 is a diagram showing measurement results of fluorescence characteristics after growing an oxide phosphor epitaxial thin film at 800 ° C. and after heat treatment at 1000 ° C., 1100 ° C., and 1200 ° C. in the atmosphere. It can be seen that the fluorescence characteristics are remarkably improved by the heat treatment at 1000 ° C. From these results, it can be seen that the fluorescence characteristics are remarkably improved by performing a heat treatment at 1000 ° C. in the atmosphere after the thin film is grown.

  FIG. 4 is a diagram showing the measurement results of the fluorescence characteristics after growing the oxide phosphor epitaxial thin film at 600 ° C. and after heat treatment at 1000 ° C. in the atmosphere. As shown in FIG. It can be seen that the fluorescence characteristics are remarkably improved by performing.

FIG. 5 is a diagram summarizing the measurement results shown in FIGS. As shown in the figure, it can be seen that the best fluorescence characteristics can be obtained by heat-treating the target having the above chemical composition at 600 ° C. at 1000 ° C. in the atmosphere after film formation by pulse laser deposition. Since about 20% of oxygen is contained in the atmosphere, it is considered that the same result can be obtained by heat treatment in oxygen. Since these results were obtained with an optimal chemical composition, Sr ₂ (Sn _1-x
It is considered that similar fluorescence characteristics can be obtained even when Ti _x ) O ₄ : 0.01 ≦ x ≦ 0.1.

A second embodiment of the present invention will be described with reference to FIGS. Figure 6 shows the x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C by pulse laser deposition using Pr _0.002 (Ca _0.6 Sr _0.4 ) _0.998 TiO ₃ as the target material. Fluorescence of oxide phosphor epitaxial thin films using Pr _0.002 (Ca _0.6 Sr _0.4 ) _0.998 TiO ₃ as a target material, grown at 600 ° C. by pulsed laser deposition, and after heat treatment at 1000 ° C. and 1100 ° C. in air It is a figure which shows the measurement result of a characteristic.

Non-Patent Document 7 shows that red fluorescence characteristics can be obtained in a polycrystal, Pr _y (Ca _x Sr _1-x ) _1-y TiO ₃ : 0.1 ≦ x ≦ 1.0, 0.0005 ≦ y ≦ 0.05. Yes. Based on these findings, the oxide phosphor epitaxial thin film obtained by the invention of the present example has Pr _y (Ca _x Sr _1-x ) _1-y TiO ₃ : 0.1 ≦ x ≦ 1.0, 0.0005 as a target material. ≦ y ≦ 0.05 is formed on a substrate by epitaxial growth at a temperature of 600 ° C. or more and 800 ° C. or less by a pulse laser deposition method.

  In the following, the case where x = 0.6 and y = 0.002 at which the best fluorescence characteristics are obtained in the chemical composition in Non-Patent Document 7 will be described. A target having the above chemical composition was formed on the substrate by epitaxial growth at a substrate temperature of 600 ° C. and 800 ° C. by a pulse laser deposition method. Thereafter, an x-ray diffraction pattern was measured in order to investigate the crystal structure of the formed oxide phosphor epitaxial thin film.

  FIG. 6 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C. as a typical example, which is an x-ray diffraction pattern from 10 degrees to 80 degrees, (001 ) Since the thin film is formed, it is understood that the thin film is epitaxially grown.

FIG. 7 is a diagram showing the measurement results of the fluorescence characteristics after the oxide phosphor epitaxial thin film was formed at 600 ° C. and after heat treatment at 1000 ° C. and 1100 ° C. in the atmosphere. As shown in FIG. It can be seen that fluorescence characteristics are obtained at a wavelength of 620 nm. Fluorescence properties are significantly improved in the thin film after heat treatment at 1000 ° C in the atmosphere or in the thin film after heat treatment at 1100 ° C in the air at a higher temperature than the fluorescence property only after the growth of oxide phosphor epitaxial thin film I understand that. In addition, it was found that the thin film after heat treatment at 1200 ° C. in the atmosphere deteriorates the fluorescence characteristics even when this material is used. Since about 20% of oxygen is contained in the atmosphere, it is considered that the same result can be obtained by heat treatment in oxygen. Since these results were obtained with an optimum chemical composition, Pr _y (Ca _x Sr _1-x ) _1-y TiO ₃ : Fluorescence characteristics can be obtained even in the region of 0.1 ≦ x ≦ 1.0 and 0.0005 ≦ y ≦ 0.05 it is conceivable that.

A third embodiment of the present invention will be described with reference to FIGS. Figure 8 shows the oxides grown at 600 ° C by pulsed laser deposition using (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : x = 0.02, y = 0.1 as the target material. FIG. 9 shows an x-ray diffraction pattern of a polycrystalline body obtained from a phosphor epitaxial thin film and calculation results. FIG. 9 shows (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : FIG. 10 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C. by a pulsed laser deposition method using x = 0.02 and y = 0.1 and a polycrystal obtained from a calculation result, (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : x = 0.02, y = 0.1 as target material, grown at 600 ° C, 800 ° C by pulsed laser deposition method, and in the atmosphere FIG. 6 is a diagram showing the measurement results of the fluorescence characteristics of oxide phosphor epitaxial thin films after heat treatment at 1000 ° C., 1100 ° C., and 1,200 ° C.

Patent Document 3 discloses that red, blue and green fluorescent properties can be obtained by polycrystalline Sn perovskite oxide, and that polycrystalline (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : It is shown that red fluorescence was obtained at 0.01 ≦ x ≦ 0.1 and 0.01 ≦ y ≦ 0.2. Based on these findings, the oxide phosphor epitaxial thin film obtained in the invention of the present example is used as a target material (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : 0.01 ≦ x ≦ 0.1 and 0.01 ≦ y ≦ 0.2 were formed on the substrate by epitaxial growth at a temperature of 600 ° C. or higher and 800 ° C. or lower by the pulse laser deposition method.

  In the following, a case where x = 0.02 and y = 0.1 are obtained in which the best fluorescence characteristic is obtained in the fluorescence characteristics of the chemical composition. A target having the above chemical composition was formed on the substrate by epitaxial growth at a substrate temperature of 600 ° C. and 800 ° C. by a pulse laser deposition method. Thereafter, an x-ray diffraction pattern was measured in order to investigate the crystal structure of the formed oxide phosphor epitaxial thin film.

  FIG. 8 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 600 ° C. As shown in FIG. 8, the x-ray diffraction pattern of the thin film is (110) azimuth relative to the calculation result. It can be seen that the thin film is epitaxially grown from the fact that the thin film oriented in the direction is grown.

  FIG. 9 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C. As shown in FIG. 9, the x-ray diffraction pattern of the thin film is (110) azimuth relative to the calculation result. It can be seen that the thin film is epitaxially grown from the fact that the thin film oriented in the direction is grown.

FIG. 10 is a diagram showing measurement results of fluorescence characteristics after forming an oxide phosphor epitaxial thin film at 800 ° C. and after heat treatment at 1000 ° C., 1100 ° C., and 1200 ° C. in the atmosphere. It can be seen that fluorescence characteristics are obtained at wavelengths of 590 nm to 610 nm showing red in each. In particular, it can be seen that the optimum conditions are obtained because the fluorescence characteristics after film formation at 600 ° C. and heat treatment at 1000 ° C. in the atmosphere have the strongest intensity. Since about 20% of oxygen is contained in the atmosphere, it is considered that the same result can be obtained by heat treatment in oxygen. Since these results were obtained with the optimum chemical composition, (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : Fluorescence was observed even in the region of 0.01 ≦ x ≦ 0.1 and 0.01 ≦ y ≦ 0.2. It is thought that characteristics can be obtained.

A fourth embodiment of the present invention will be described with reference to FIGS. Fig. 11 shows the oxide phosphor grown at 600 ° C by pulsed laser deposition using {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : x = 0.03, y = 0.005 as the target material. FIG. 12 shows an x-ray diffraction pattern of the polycrystalline thin film obtained from the epitaxial thin film and the calculation result. FIG. 12 shows {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : x = 0.03 as a target material. FIG. 13 shows an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C. by a pulse laser deposition method using y = 0.005 and a polycrystal obtained from the calculation result. FIG. (Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : x = 0.03, y = 0.005, after growth at 600 ° C. and 800 ° C. by pulsed laser deposition, and in the atmosphere 1000 ° C., 1100 ° C., It is a figure which shows the measurement result of the fluorescence characteristic of the oxide fluorescent substance epitaxial thin film after heat processing at 1200 degreeC.

Patent Document 3 discloses that the polycrystalline Sn perovskite oxide provides red, blue, and green fluorescence characteristics, and that the polycrystalline {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : It is shown that green fluorescence is obtained when 0.01 ≦ x ≦ 0.2 and 0.001 ≦ y ≦ 0.2. Based on these findings, the oxide phosphor epitaxial thin film obtained by the invention of the present example, the target material is {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : 0.01 ≦ x ≦ 0.2, 0.001 ≦ y ≦ 0.2 was formed on the substrate by epitaxial growth at a temperature of 600 ° C. or more and 800 ° C. or less by the pulse laser deposition method.

  In the following, the case where x = 0.03 and y = 0.005 are obtained in which the best fluorescence characteristics can be obtained with the chemical composition shown in Patent Document 3. A target having the above chemical composition was formed on the substrate by epitaxial growth at a substrate temperature of 600 ° C. and 800 ° C. by a pulse laser deposition method. Thereafter, an x-ray diffraction pattern was measured in order to investigate the crystal structure of the formed oxide phosphor epitaxial thin film.

  FIG. 11 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 600 ° C. As shown in FIG. 11, the x-ray diffraction pattern of the thin film is (110) azimuth relative to the calculation result. It can be seen that the thin film is epitaxially grown from the fact that the thin film oriented in the direction is grown.

  FIG. 12 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C. As shown in FIG. 12, the x-ray diffraction pattern of the thin film is (110) azimuth relative to the calculation result. It can be seen that the thin film is epitaxially grown from the fact that the thin film oriented in the direction is grown.

FIG. 13 is a diagram showing measurement results of fluorescence characteristics after forming an oxide phosphor epitaxial thin film at 600 ° C. and 800 ° C., and after heat treatment at 1000 ° C., 1100 ° C., and 1200 ° C. in the atmosphere. Thus, as a result of measuring the fluorescence characteristics of the thin film, a good result was not obtained immediately after film formation at 800 ° C. As a result of heat treatment at 1000 ° C, 1100 ° C and 1200 ° C in the air after film formation at 800 ° C, and as a result of heat treatment at 1100 ° C in air after film formation at 600 ° C, a wavelength of 540 nm was used in all cases. It can be seen that a remarkable fluorescence characteristic is obtained. In particular, it can be seen that when the film is formed at 600 ° C. and then heat-treated at 1100 ° C. in the atmosphere, the most remarkable fluorescence characteristics can be obtained. Since about 20% of oxygen is contained in the atmosphere, it is considered that the same result can be obtained by heat treatment in oxygen. Since these results were obtained with an optimal chemical composition, {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : Fluorescence characteristics were also obtained in the region of 0.01 ≦ x ≦ 0.2 and 0.001 ≦ y ≦ 0.2. It is thought that it is obtained.

A fifth embodiment of the present invention will be described with reference to FIGS. FIG. 14 shows the polycrystalline oxide obtained from the oxide phosphor epitaxial thin film grown at 800 ° C. by pulsed laser deposition method and the calculation result using (Pr _x Sr _1-x ) SnO ₃ : x = 0.005 as the target material. FIG. 15 shows an x-ray diffraction pattern of the body, and (Pr _x Sr _1-x ) SnO ₃ : x = 0.005 is used as a target material, grown at 600 ° C. and 800 ° C. by the pulse laser deposition method, and the atmosphere It is a figure which shows the measurement result of the fluorescence characteristic of the oxide fluorescent substance epitaxial thin film after heat processing inside 1000 degreeC and 1100 degreeC.

Patent Document 3 describes that red, blue, and green fluorescence characteristics can be obtained by polycrystalline Sn perovskite oxide, and that polycrystalline (Pr _x Sr _1-x ) SnO ₃ : 0.001 ≦ x ≦ 0.2 wavelength. It has been shown that 490 nm ± 10 nm fluorescence can be obtained. Based on these findings, the oxide phosphor epitaxial thin film obtained by the invention of this example is obtained by applying (Pr _x Sr _1-x ) SnO ₃ : 0.001 ≦ x ≦ 0.2 as a target material by a pulse laser deposition method. The film is formed on the substrate by epitaxial growth at a temperature of from ℃.

  In the following, the case where x = 0.005 is obtained in which the best fluorescence characteristic is obtained with the chemical composition shown in Patent Document 3. A target having the above chemical composition was formed on the substrate by epitaxial growth at a substrate temperature of 600 ° C. and 800 ° C. by a pulse laser deposition method. Thereafter, an x-ray diffraction pattern was measured in order to examine the crystal structure of the oxide phosphor epitaxial thin film formed at 800 ° C.

  FIG. 14 is a diagram showing an x-ray diffraction pattern of an oxide phosphor epitaxial thin film grown at 800 ° C. As shown in FIG. 14, the x-ray diffraction pattern of the thin film is (110) azimuth relative to the calculation result. It can be seen that the thin film is epitaxially grown from the fact that the thin film oriented in the direction is grown.

FIG. 15 is a diagram showing the measurement results of the fluorescence characteristics after forming the oxide phosphor epitaxial thin film at 600 ° C. and 800 ° C., and after heat treatment at 1000 ° C. and 1100 ° C. in the atmosphere. As a result of measuring the fluorescence characteristics of the thin film, good results were not obtained immediately after film formation at 600 ° C. and 800 ° C. As a result of heat treatment at 1000 ° C. and 1100 ° C. in the air after film formation at 600 ° C. and 800 ° C., it can be seen that the fluorescence properties are improved and remarkable fluorescence properties are obtained at a wavelength of 490 nm. In particular, it can be seen that when the film is formed at 600 ° C. and then heat-treated at 1100 ° C. in the atmosphere, the most remarkable fluorescence characteristics can be obtained. Since about 20% of oxygen is contained in the atmosphere, it is considered that the same result can be obtained by heat treatment in oxygen. Since these results were obtained with an optimal chemical composition, it is considered that fluorescence characteristics can be obtained even in the region of (Pr _x Sr _1-x ) SnO ₃ : 0.001 ≦ x ≦ 0.2.

Using Sr ₂ (Sn _1-x Ti _x ) O ₄ : x = 0.05 as the target material, obtained from the oxide phosphor epitaxial thin film, polycrystal, and calculation results grown at 800 ° C by pulsed laser deposition method It is a figure which shows the x-ray-diffraction pattern of a polycrystal. Sr ₂ (Sn _1-x Ti _x ) O ₄ : x = 0.05 as the target material, grown at 850 ° C by pulsed laser deposition, and after heat treatment at 1000 ° C, 1100 ° C, and 1200 ° C in air It is a figure which shows the measurement result of the fluorescence characteristic of a fluorescent substance epitaxial thin film. Sr ₂ (Sn _1-x Ti _x ) O ₄ : x = 0.05 as target material, grown at 800 ° C by pulsed laser deposition method, and oxide after heat treatment at 1000 ° C, 1100 ° C, 1200 ° C in air It is a figure which shows the measurement result of the fluorescence characteristic of a fluorescent substance epitaxial thin film. Fluorescence of oxide phosphor epitaxial thin films using Sr ₂ (Sn _1-x Ti _x ) O ₄ : x = 0.05 as a target material, grown at 600 ° C by pulsed laser deposition, and heat-treated at 1000 ° C in air It is a figure which shows the measurement result of a characteristic. FIG. 5 summarizes the measurement results of the fluorescence characteristics of FIGS. The _{Pr 0.002 (Ca 0.6 Sr 0.4)} 0.998 TiO 3 used as a target material is a diagram showing an x-ray diffraction pattern of the oxide phosphor epitaxial thin film after growth at 800 ° C. by pulsed laser deposition. Pr _0.002 (Ca _0.6 Sr _0.4 ) _0.998 TiO ₃ as the target material, grown at 600 ° C by pulsed laser deposition, and after the heat treatment at 1000 ° C and 1100 ° C in the atmosphere, the fluorescence characteristics of the oxide phosphor epitaxial thin film It is a figure which shows a measurement result. (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : x = 0.02, y = 0.1 as the target material, oxide phosphor epitaxial thin film grown at 600 ° C. by pulsed laser deposition method It is a figure which shows the x-ray-diffraction pattern of the polycrystal obtained from the calculation result. (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : x = 0.02, y = 0.1 as the target material, oxide phosphor epitaxial thin film grown at 800 ° C. by pulsed laser deposition method It is a figure which shows the x-ray-diffraction pattern of the polycrystal obtained from the calculation result. (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : x = 0.02, y = 0.1 as target material, grown at 600 ° C, 800 ° C by pulsed laser deposition method, and in the atmosphere FIG. 6 is a diagram showing the measurement results of the fluorescence characteristics of oxide phosphor epitaxial thin films after heat treatment at 1000 ° C., 1100 ° C., and 1,200 ° C. Using {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : x = 0.03, y = 0.005 as the target material, and the oxide phosphor epitaxial thin film grown at 600 ° C. by pulse laser deposition and calculation It is a figure which shows the x-ray-diffraction pattern of the polycrystal obtained from the result. Using {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : x = 0.03, y = 0.005 as the target material, and the oxide phosphor epitaxial thin film grown at 800 ° C by pulsed laser deposition and calculation It is a figure which shows the x-ray-diffraction pattern of the polycrystal obtained from the result. Using {(Ca _1-x Mg _x ) _1-y Tb _y } SnO ₃ : x = 0.03, y = 0.005 as the target material, grown at 600 ° C and 800 ° C by pulsed laser deposition, and 1000 ° C in the atmosphere FIG. 3 is a graph showing measurement results of fluorescence characteristics of oxide phosphor epitaxial thin films after heat treatment at 1100 ° C. and 1200 ° C. FIG. Using (Pr _x Sr _1-x ) SnO ₃ : x = 0.005 as the target material, the oxide phosphor epitaxial thin film grown at 800 ° C by pulsed laser deposition and the x-ray of the polycrystalline material obtained from the calculation results It is a figure which shows a diffraction pattern. (Pr _x Sr _1-x ) SnO ₃ : x = 0.005 as target material, grown at 600 ° C and 800 ° C by pulsed laser deposition, and after heat treatment at 1000 ° C and 1100 ° C in air It is a figure which shows the measurement result of the fluorescence characteristic of an epitaxial thin film.

Claims (9)

  An oxide phosphor epitaxial thin film characterized in that a thin film is formed on a substrate by epitaxial growth at a temperature of 600 ° C. or higher and 800 ° C. or lower by pulse laser deposition using an oxide fluorescent material as a target material.   2. The oxide phosphor epitaxial thin film according to claim 1, wherein the target material is a polycrystalline target material in which a rare earth element, a transition metal element, or an alkaline earth element is substituted with a perovskite structure. 3. The oxide phosphor according to claim 1, wherein the target material is Sr ₂ (Sn _1-x Ti _x ) O ₄ : 0.01 ≦ x ≦ 0.1, and blue fluorescence is obtained. Epitaxial thin film. The target material is Pr _y (Ca _x Sr _1-x ) _1-y TiO ₃ : 0.1 ≦ x ≦ 1.0, 0.0005 ≦ y ≦ 0.05, and red fluorescence is obtained. Item 3. The oxide phosphor epitaxial thin film according to Item 2. The target material is (Sr _1-x Eu _x ) ₂ (Sn _1-y Ti _y ) O ₄ : 0.01 ≦ x ≦ 0.1, 0.01 ≦ y ≦ 0.2, and red fluorescence is obtained. Item 3. The oxide phosphor epitaxial thin film according to Item 1 or 2. 2. The target material is {(Ca _1−x Mg _x ) _1−y Tb _y } SnO ₃ : 0.01 ≦ x ≦ 0.2, 0.001 ≦ y ≦ 0.2, and green fluorescence is obtained. 3. The oxide phosphor epitaxial thin film according to claim 2. _3. The oxide according to claim 1, wherein the target material is (Pr _x Sr _1-x ) SnO ₃ : 0.001 ≦ x ≦ 0.2, and fluorescence with a wavelength of 490 nm ± 10 nm is obtained. Phosphor epitaxial thin film.   8. The oxide according to claim 1, wherein the thin film has a fluorescent property improved by a heat treatment at 900 ° C. or more and 1200 ° C. or less in oxygen or air. Phosphor epitaxial thin film. The substrate is made of a material having a perovskite-related structure made of any of SrTiO ₃ , LaAlO ₃ , LaGaO ₃ , LaSrGaO ₄ , or a material having a cubic or tetragonal system made of either MgO or MgAl ₂ O _4. 9. The oxide phosphor epitaxial thin film according to any one of claims 1 to 8, wherein the oxide phosphor epitaxial thin film is characterized.

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