JP2008010368A - Wiring, its manufacturing method, and circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring with degradation prevented and its manufacturing method, as well as a circuit device with degradation of wiring between elements prevented. <P>SOLUTION: A plurality of temperature sensors TS1 to TS8 are electrically connected by a plurality of spiral wirings H1 to H9. The spiral wirings H1 to H9 are structured of a crystalline silicon film 103, a first rotating layer 104, a second rotating layer 105 and metal wirings W1 to W9. A lattice constant of the second rotating layer 105 is smaller than that of the first rotating layer 104. Due to the difference of the lattice constants, the first rotating layer 104 and the second rotating layer 105 are spirally wound around together with the crystalline silicon film 103 and the metal wirings W1 to W9. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a wiring between electrodes, a manufacturing method thereof, and a circuit device.

  In recent years, with the development of robot engineering, the performance of various robots such as industrial robots, medical robots, and nursing care robots has been remarkably improved. These robots are equipped with a plurality of electronic components.

For example, in a robot provided with a pressure detection sensor described in Patent Document 1, a plurality of skin sensors are provided in the robot body. Each of the plurality of skin sensors is connected to the controller, and outputs a detection signal to the controller when an obstacle or the like contacts the skin sensor. The controller can control the operation of the robot based on the detection signal from the skin sensor. Thereby, operation with high mobility becomes possible.
JP 2004-34251 A

  The performance of the robot can be improved by increasing the number of sensors. For example, when a large number of sensors are provided in the hand of the robot, the sensitivity of the hand can be sufficiently increased, and a more delicate operation is possible.

  When many sensors are provided in a predetermined region of the robot, the plurality of sensors are electrically connected by, for example, metal wiring. Thereby, it is possible to efficiently process a plurality of detection signals output from a plurality of sensors.

  By the way, when providing a some sensor in the joint part etc. of a robot, for example, the metal wiring which connects a some sensor curves frequently. Therefore, when a plurality of sensors are connected by metal wiring, the metal wiring deteriorates due to fatigue and breaks. As a result, the robot breaks down.

  An object of the present invention is to provide a wiring in which deterioration is prevented, a manufacturing method thereof, and a circuit device in which deterioration of wiring between elements is prevented.

  (1) A wiring according to a first invention includes, in order, a first layer having a first lattice constant, a second layer having a second lattice constant different from the first lattice constant, and a wiring layer And the first layer, the second layer, and the wiring layer are formed in a linear shape having a bent portion or a curved portion, and the first and second layers are caused by a difference between the first lattice constant and the second lattice constant. The second layer is spirally wound together with the wiring layer.

  In this wiring, the lattice constant of the first layer and the lattice constant of the second layer are different. Due to this difference in lattice constant, the first layer and the second layer are spirally wound together with the wiring layer. Therefore, this wiring is excellent in stretchability, and even when bent frequently, it is prevented from being deteriorated and broken.

  In addition, since the wiring layer is reinforced by the first and second layers, the deterioration of the wiring layer can be prevented. Thereby, the reliability of wiring can be improved.

  (2) The wiring may further include a coating layer made of an elastic material that seals the first and second layers and the wiring layer.

  In this case, the wiring is protected from external influences by the coating layer without inhibiting the stretchability of the wiring. Therefore, the deterioration and breakage of the wiring can be reliably prevented. Moreover, the strength of the wiring can be improved by sealing the wiring with the covering layer.

  The first and second layers may be made of a semiconductor material. In this case, the wiring can be easily manufactured.

  (3) A circuit device according to a second invention includes a plurality of elements and a plurality of wirings that electrically connect the plurality of elements, and each of the plurality of wirings has a first lattice constant. , A second layer having a second lattice constant different from the first lattice constant, and a wiring layer in order, and the first layer, the second layer, and the wiring layer are bent portions or curved portions. The first and second layers are spirally wound together with the wiring layer due to the difference between the first lattice constant and the second lattice constant.

  In this circuit device, the plurality of elements are electrically connected by the same wiring as the wiring according to the first invention. Therefore, even when the circuit device is used in an environment where the circuit device is bent frequently, the wiring between the elements is prevented from being deteriorated and broken.

  (4) The circuit device may further include a coating layer made of an elastic material that seals the plurality of elements and the plurality of wirings.

  In this case, the element and the wiring are protected from external influences by the coating layer without hindering the stretchability of the wiring. Therefore, it is possible to reliably prevent the deterioration of the element and the deterioration and breakage of the wiring. Moreover, the strength of the wiring can be improved by sealing the wiring with the covering layer. As a result, the reliability of the circuit device can be improved.

  (5) A method of manufacturing a wiring according to a third aspect of the present invention includes a support layer on a substrate, a first layer having a first lattice constant, and a second having a second lattice constant different from the first lattice constant. Electrically forming the first electrode and the second electrode, the step of forming a stacked structure comprising the layers in order, the step of forming the first and second electrodes so as to be separated from each other on the second layer, Forming a linear wiring layer having a bent portion or a curved portion on the second layer so as to be connected to the first layer, and excluding regions under the first electrode, under the second electrode, and under the wiring layer Removing the second layer, the first layer, and the support layer, and removing the support layer in the region under the wiring layer except for the region under the first electrode and the region under the second electrode, The first lattice constant and the second layer in a state where the first layer is supported by the support layer in the region under the first electrode and the second electrode. Due to the difference from the child constant, the step of spirally winding the first layer and the second layer together with the wiring layer, and the support layer in the region under the first electrode and the second electrode are removed. And a step of removing the substrate from the first layer.

  In the wiring manufactured by this manufacturing method, the lattice constant of the first layer is different from the lattice constant of the second layer. Due to this difference in lattice constant, the first layer and the second layer are spirally wound together with the wiring layer. Therefore, this wiring is excellent in stretchability, and even when bent frequently, it is prevented from being deteriorated and broken.

  In addition, since the wiring layer is reinforced by the first and second layers, the deterioration of the wiring layer can be prevented.

  According to the present invention, the wiring is composed of the first layer, the second layer, and the wiring layer, and is wound spirally. Therefore, the wiring is excellent in stretchability and is prevented from being deteriorated and broken even when it is bent frequently.

  In addition, since the wiring layer is reinforced by the first and second layers, the deterioration of the wiring layer can be prevented. Thereby, the reliability of wiring can be improved.

  Hereinafter, as an example of a circuit device and wiring according to an embodiment of the present invention, wiring between a temperature sensor unit and a temperature sensor will be described with reference to the drawings. In addition, the temperature sensor unit demonstrated below can be used as artificial skin of a robot, for example.

(1) Manufacturing method of temperature sensor unit FIGS. 1-11 is a figure for demonstrating the manufacturing method of a temperature sensor unit. 1 to 6 and 8 to 11, (a) is a schematic cross-sectional view taken along line AA shown in (b), and (b) is a plan view. 1 to 6 and FIGS. 8 to 11 are provided with arrows indicating X, Y, and Z directions orthogonal to each other in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.

First, as shown in FIG. 1, an SOI (Silicon On Insulator) substrate 1000 is prepared. The SOI substrate 1000 includes a crystalline silicon substrate 101, a buried oxide film 102, and a crystalline silicon film 103. The buried oxide film 102 is made of, for example, silicon oxide (SiO ₂ ) and has a thickness of, for example, 200 nm to 1 μm. The thickness of the crystalline silicon film 103 is, for example, 20 nm.

  Next, as shown in FIG. 2, on the crystalline silicon film 103, a first convolution layer 104 made of silicon germanium (SiGe), a second convolution layer 105 made of silicon (Si), and a support layer 106 made of SiGe. And the integrated circuit layer 107 made of Si are epitaxially grown in this order. Note that the lattice constant of the second convolution layer 105 is smaller than the lattice constant of the first convolution layer 104.

  The first and second convolution layers 104 and 105, the support layer 106, and the integrated circuit layer 107 are formed by MBE (molecular beam epitaxial growth), MOCVD (metal organic chemical vapor deposition), and CVD (chemical). It is formed using an epitaxial growth technique such as a vapor phase growth method). The thickness of the first convolution layer 104 is, for example, 20 nm, the thickness of the second convolution layer 105 is, for example, 100 nm, and the thickness of the support layer 106 is, for example, 20 nm.

  Next, as shown in FIG. 3, a plurality of temperature sensors TS1 to TS8 are formed on the integrated circuit layer 107, and then the integrated circuit layer 107 and the temperature sensors TS1 to TS8 excluding the region where the temperature sensors TS1 to TS8 are formed. The support layer 106 except for the region under the region where the film is formed is removed by etching. The temperature sensors TS1 to TS8 are made of, for example, CMOS (Complementary Metal Oxide Semiconductor).

  Next, as shown in FIG. 4, substantially L-shaped metal wirings W <b> 1 to W <b> 9 are formed on the upper and side surfaces of the temperature sensors TS <b> 1 to TS <b> 8, the side surface of the support layer 106, and the second convolution layer 105 by evaporation or sputtering. Form. The metal wirings W1 to W9 electrically connect the electrodes of the temperature sensors TS1 to TS8, and are made of, for example, aluminum (Al), titanium alloy (for example, TiAu), chromium alloy (for example, CrAu), or the like.

  In FIG. 4, the temperature sensor TS1 and the temperature sensor TS5 are connected by the metal wiring W1, the temperature sensor TS1 and the temperature sensor TS2 are connected by the metal wiring W2, and the temperature sensor TS2 and the temperature sensor TS3 are connected by the metal wiring W3. It is connected. Further, the temperature sensor TS3 and the temperature sensor TS6 are connected by the metal wiring W4, the temperature sensor TS3 and the temperature sensor TS4 are connected by the metal wiring W5, and the temperature sensor TS2 and the temperature sensor TS8 are connected by the metal wiring W6. Yes. Further, the temperature sensor TS2 and the temperature sensor TS7 are connected by the metal wiring W7, the temperature sensor TS4 and the temperature sensor TS7 are connected by the metal wiring W8, and the temperature sensor TS3 and the temperature sensor TS5 are connected by the metal wiring W9. Yes.

  Next, as shown in FIG. 5, the crystalline silicon film 103, the first convolution layer 104, and the second convolution layer 105 are etched by etching except for the regions under the temperature sensors TS1 to TS8 and the metal wirings W1 to W9. Remove. Thereby, the buried oxide film 102 is exposed except for the region under the metal wirings W1 to W9.

  Thereafter, as shown in FIG. 6, the buried oxide film 102 is removed by etching except for the region under the temperature sensors TS1 to TS8. Thereby, the metal wirings W1 to W9 are free from the crystalline silicon substrate 101 except for the region under the temperature sensors TS1 to TS8.

  Here, as described above, the lattice constant of the second convolution layer 105 is smaller than the lattice constant of the first convolution layer 104. Therefore, distortion occurs due to the difference in lattice constant at the boundary surface between the first and second rotating layers 104 and 105. As a result, the first convolution layer 104 and the second convolution layer 105 are deformed so as to alleviate the distortion of the boundary surface. Further, the crystalline silicon film 103 is deformed together with the first rotating layer 104. This will be described in detail below with reference to FIGS.

  FIG. 7 is a diagram for explaining a deformation process of the crystalline silicon film 103 and the first and second convolution layers 104 and 105. In FIG. 7, as an example, the deformation of the crystalline silicon film 103 and the first and second convolution layers 104 and 105 between the temperature sensor TS1 and the temperature sensor TS5 will be described.

  In FIG. 7, the first and second convolution layers 104 and 105 are not shown, and the metal wiring W1 formed on the upper surfaces of the crystalline silicon film 103 and the second convolution layer 105 is shown. Yes.

  As shown in FIG. 6, when the buried oxide film 102 except for the region under the temperature sensors TS1 to TS8 is removed, the crystalline silicon film 103 and the first and second rotating layers 104 and 105 have the temperature sensors TS1 to TS8. It is supported by the buried oxide film 102 and the support layer 106 in the lower region. In the region supported by the buried oxide film 102 and the support layer 106, deformation of the crystalline silicon film 103 and the first and second rotating layers 104 and 105 is prevented.

  In this case, for example, between the temperature sensor TS1 and the temperature sensor TS5, the substantially L-shaped crystalline silicon film 103, the first convolution layer 104, and the second convolution layer 105 are formed as shown in FIGS. As shown in order in (c), the region below the temperature sensors TS1, TS5 is rotated as a fixed end, and spirally wound in the direction of the arrow while winding the metal wiring W1. Finally, as shown in FIGS. 7D and 8, a linear spiral wiring H1 including the crystalline silicon film 103, the first rotating layer 104, the second rotating layer 105, and the metal wiring W1 is obtained. . The spiral wiring H1 has a clockwise spiral structure from one end to the center, and has a counterclockwise spiral structure from the other end to the center.

  Similar deformation occurs in the region where the metal wirings W2 to W9 are formed (see FIG. 6), and the spiral wirings H2 to H9 are formed as shown in FIG.

  Next, as shown in FIG. 9, the embedded oxide film 102 and the spiral wirings H <b> 1 to H <b> 9 (the crystalline silicon film 103, the first rotating layer 104, the second rotating layer 105, and the like are formed on the crystalline silicon substrate 101 by the elastomer 108. And the metal wirings W1 to W9), the support layer 106 and the temperature sensors TS1 to TS8 are sealed. As the elastomer 108, for example, an acrylic resin, an epoxy resin, a silicon resin, or the like can be used. In the present embodiment, PDMS (polydimethylsiloxane) resin is used.

  Next, as shown in FIG. 10, the crystalline silicon substrate 101 and the buried oxide film 102 are removed by etching. Thereafter, as shown in FIG. 11, the lower side of the crystalline silicon film 103 is sealed with an elastomer 108. Thereby, the temperature sensor unit 100 is completed.

(2) Effect As described above, in the present embodiment, the temperature sensors TS1 to TS8 are electrically connected by the spiral wirings H1 to H9. Since the spiral wirings H1 to H9 have a spiral structure, they have excellent stretchability. Therefore, for example, when the temperature sensor unit 100 is used as skin such as a joint portion of a robot, that is, when the temperature sensor unit 100 is bent frequently, the spiral wirings H1 to H9 (metal wirings W1 to W9) deteriorate. And it can prevent breaking.

  The spiral wirings H1 to H9 are formed such that the metal wirings W1 to W9 are wound by the crystalline silicon film 103, the first convolution layer 104, and the second convolution layer 105. Therefore, since the metal wirings W1 to W9 are protected by the crystalline silicon film 103, the first convolution layer 104, and the second convolution layer 105, deterioration and breakage of the metal wirings W1 to W9 can be sufficiently prevented.

  The spiral wirings H1 to H9 are sealed with an elastomer 108. In this case, the elastomeric wire 108 protects the spiral wires H1 to H9 from external influences without inhibiting the stretchability of the spiral wires H1 to H9. Accordingly, it is possible to reliably prevent the deterioration and breakage of the spiral wirings H1 to H9 (metal wirings W1 to W9).

  Further, the spiral wirings H1 to H9 are sealed with the elastomer 108, whereby the strength of the spiral wirings H1 to H9 is improved. Thereby, deterioration and a fracture | rupture of spiral wiring H1-H9 (metal wiring W1-W9) can be prevented more reliably.

  As a result, the reliability of the temperature sensor unit 100 can be improved.

(3) Correspondence between each constituent element of claims and each part of the embodiment Hereinafter, examples of correspondence between each constituent element of the claims and each part of the embodiment will be described, but the present invention is limited to the following examples. Not.

  In the above embodiment, the first rotating layer 104 corresponds to the first layer, the second rotating layer 105 corresponds to the second layer, the metal wirings W1 to W9 correspond to the wiring layer, and the L The shape corresponds to a linear shape having a bent portion or a curved portion, the elastomer 108 corresponds to a coating layer, the temperature sensors TS1 to TS8 correspond to elements or first and second electrodes, and the crystalline silicon substrate 101 serves as a substrate. The buried oxide film 102 corresponds to the support layer.

(4) Other Embodiments In the above embodiment, the wiring for connecting the temperature sensors TS1 to TS8 has been described. However, the wiring according to the present invention is a wiring or circuit for connecting other sensors such as a pressure sensor. It can be used as various wirings such as a wiring for connecting elements, a wiring for connecting a sensor and a signal processing circuit, or a wiring for connecting terminals.

  In the above embodiment, the spiral wirings H1 to H9 are composed of the crystalline silicon film 103, the first convolution layer 104, the second convolution layer 105, and the metal wirings W1 to W9. ˜H9 may not include the crystalline silicon film 103.

  In the above embodiment, the lattice constant of the second convolution layer 105 is set to be smaller than the lattice constant of the first convolution layer 104, but the first convolution layer 104 and the second convolution layer are the same. The layer 105 may be wound spirally, and the lattice constant of the first convolution layer 104 may be set smaller than the lattice constant of the second convolution layer 105.

  In the above embodiment, the first and second rotating layers 104 and 105 having different lattice constants are formed by epitaxial growth. However, a crystalline silicon film is formed on the SOI substrate 1000, and the crystalline silicon film An impurity element may be added to the upper region or the lower region in the crystalline silicon film so that the lattice constant of the upper region of the crystal layer and the lattice constant of the lower region in the crystalline silicon film are different. As the impurity element, for example, B (boron), N (nitrogen), Al (aluminum), P (phosphorus), or the like can be used.

  In the above embodiment, the first and second convolution layers 104 and 105 are formed of a semiconductor material. However, the lattice constant of the first convolution layer 104 and the lattice constant of the second convolution layer 105 are The first and second convolution layers 104 and 105 are not limited to semiconductor materials. For example, one or both of the first and second rotating layers 104 and 105 may be formed of an insulating material.

  Further, the first and second convolution layers 104 and 105 may be formed of a compound semiconductor such as InGaAs or GaAs.

  Further, a stacked substrate made of other materials may be used instead of the SOI substrate made of a crystalline silicon substrate, an oxide film, and a crystalline silicon film. For example, a laminated substrate made of a SiC (silicon carbide) substrate, an oxide film, and a SiC film may be used.

  Further, the insulating film of the laminated substrate is not limited to the oxide film, and may be another insulating film such as a nitride film.

  In the above embodiment, the spiral wirings H1 to H9 are formed by the substantially L-shaped crystalline silicon film 103 having one bent portion, the first rotating layer 104, the second rotating layer 105, and the metal wirings W1 to 9. Other linear crystalline silicon films 103 such as a U-shape having one curved portion, a V-shape having one bent portion, a W-shape having two bent portions, and the like. The spiral wirings H1 to H9 may be formed by the spiral layer 104, the second spiral layer 105, and the metal wirings W1 to W9.

  In the above embodiment, the spiral wirings H1 to H9 are composed of the crystalline silicon film 103, the first convolution layer 104, the second convolution layer 105, and one metal wiring W1 to W9. The wirings H1 to H9 may be composed of the crystalline silicon film 103, the first convolution layer 104, the second convolution layer 105, and a plurality of metal wirings W1 to W9.

  The present invention can be effectively used for wiring of various electronic components, robot sensors, and the like.

It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit. It is a figure for demonstrating the manufacturing method of a temperature sensor unit.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Temperature sensor unit 101 Crystal silicon substrate 102 Embedded oxide film 103 Crystal silicon film 104 1st rotation layer 105 2nd rotation layer 106 Support layer 107 Integrated circuit layer 108 Elastomer 1000 SOI substrate H1-H9 Spiral wiring TS1-TS8 Temperature sensor W1-W9 metal wiring

Claims (5)

A first layer having a first lattice constant;
A second layer having a second lattice constant different from the first lattice constant;
A wiring layer in order,
The first layer, the second layer, and the wiring layer are formed in a linear shape having a bent portion or a curved portion,
The wiring according to claim 1, wherein the first and second layers are spirally wound together with the wiring layer due to a difference between the first lattice constant and the second lattice constant. The wiring according to claim 1, further comprising a covering layer made of an elastic material that seals the first and second layers and the wiring layer. A plurality of elements;
A plurality of wirings for electrically connecting the plurality of elements;
Each of the plurality of wirings is
A first layer having a first lattice constant;
A second layer having a second lattice constant different from the first lattice constant;
A wiring layer in order,
The first layer, the second layer, and the wiring layer are formed in a linear shape having a bent portion or a curved portion,
A circuit device, wherein the first and second layers are spirally wound together with the wiring layer due to a difference between the first lattice constant and the second lattice constant. The circuit device according to claim 3, further comprising a covering layer made of an elastic material that seals the plurality of elements and the plurality of wirings. Forming a laminated structure comprising a support layer, a first layer having a first lattice constant, and a second layer having a second lattice constant different from the first lattice constant in order on a substrate;
Forming first and second electrodes on the second layer so as to be spaced apart from each other;
Forming a linear wiring layer having a bent portion or a curved portion on the second layer so as to electrically connect the first electrode and the second electrode;
Removing the second layer, the first layer, and the support layer excluding the region under the first electrode, the second electrode, and the wiring layer;
By removing the support layer in the region under the wiring layer except for the region under the first electrode and the second electrode, the first layer is formed under the first electrode and the second electrode. The first layer and the second layer are connected to the wiring due to a difference between the first lattice constant and the second lattice constant while being supported by the support layer in a region under the electrode A step of spirally winding together with the layer;
And a step of removing the substrate from the first layer by removing the support layer in a region under the first electrode and under the second electrode.

Images