JP2007333745A5 - - Google Patents
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- JP2007333745A5 JP2007333745A5 JP2007196889A JP2007196889A JP2007333745A5 JP 2007333745 A5 JP2007333745 A5 JP 2007333745A5 JP 2007196889 A JP2007196889 A JP 2007196889A JP 2007196889 A JP2007196889 A JP 2007196889A JP 2007333745 A5 JP2007333745 A5 JP 2007333745A5
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- electron beam
- beam apparatus
- pattern shape
- square root
- sum
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- 238000010894 electron beam technology Methods 0.000 claims 24
- 238000011156 evaluation Methods 0.000 claims 10
- 230000001678 irradiating Effects 0.000 claims 2
- 230000000875 corresponding Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Claims (13)
前記画像内の評価対象パターンの境界となる点の位置を、基準直線に沿って一定間隔で計測して、パターンエッジの系列データを生成し、
前記系列データをフーリエ変換し、
特定の周波数領域の指定入力、または予め設定された特定の周波数領域に従い、前記特定の領域の周波数に対するフーリエ係数の絶対値の二乗の値を全て足し合わせて合計値を算出し、
当該合計値に基づき前記評価対象パターン形状の特徴を表す指標を計算することを特徴とするパターン形状評価方法。 Scan while irradiating the object to be measured with an electron beam, detect secondary electrons or reflected electrons emitted from the object to be measured, and image the two-dimensional distribution of the intensity as a grayscale image,
Measure the position of the point that becomes the boundary of the evaluation target pattern in the image at regular intervals along the reference line, and generate the pattern edge series data,
Fourier transform the series data,
In accordance with a specific input of a specific frequency region or a specific frequency region set in advance, the sum of all square values of the absolute value of the Fourier coefficient for the frequency of the specific region is calculated,
A pattern shape evaluation method, comprising: calculating an index representing characteristics of the evaluation target pattern shape based on the total value.
前記指標を画面表示することを特徴とするパターン形状評価方法。 A pattern shape evaluation method comprising displaying the index on a screen.
前記評価対象パターン形状の特徴を表す指標として、前記合計値、前記合計値の平方根、前記合計値の平方根の２倍、前記合計値の平方根の３倍、および前記合計値の平方根の６倍、の少なくとも一つ以上の値を用いることを特徴とするパターン形状評価方法。 As an index representing the characteristics of the evaluation target pattern shape, the total value, the square root of the total value, twice the square root of the total value, three times the square root of the total value, and six times the square root of the total value, A pattern shape evaluation method using at least one of the values.
前記電子線照射により発生する二次電子または反射電子を検出して、前記電子線の照射領域の二次元信号分布情報を取得する電子顕微鏡と、 An electron microscope that detects secondary electrons or reflected electrons generated by the electron beam irradiation and acquires two-dimensional signal distribution information of the irradiation region of the electron beam;
当該二次元信号分布情報に対して所定の計算処理を行うコンピュータとを有し、 A computer that performs a predetermined calculation process on the two-dimensional signal distribution information,
当該コンピュータは、前記系列データをフーリエ変換して得られるフーリエ係数の絶対値の二乗和を所定の周波数範囲について計算することにより、前記評価対象パターン形状の特徴を表す指標を算出することを特徴とする電子線装置。 The computer calculates an index representing the characteristic of the evaluation target pattern shape by calculating a sum of squares of absolute values of Fourier coefficients obtained by Fourier transform of the series data for a predetermined frequency range. An electron beam device.
前記評価対象パターン形状の特徴を表す指標として、前記二乗和、前記二乗和の平方根、前記二乗和の平方根の２倍、前記二乗和の平方根の３倍、および前記二乗和の平方根の６倍のいずれか一つの値を用いることを特徴とする電子線装置。As an index representing the characteristics of the pattern shape to be evaluated, the sum of squares, the square root of the sum of squares, twice the square root of the sum of squares, three times the square root of the sum of squares, and six times the square root of the sum of squares Any one of the values is used.
前記所定の周波数範囲の下限が０．５μｍ The lower limit of the predetermined frequency range is 0.5 μm −１-1 であり、上限が１０μｍThe upper limit is 10 μm −１-1 であることを特徴とする電子線装置。An electron beam apparatus characterized by
指定される特定の周波数領域の下限が１μｍ Lower limit of specified specific frequency range is 1 μm −１-1 であり、上限が１００μｍThe upper limit is 100 μm −１-1 であることを特徴とする電子線装置。An electron beam apparatus characterized by
前記コンピュータは、 The computer
前記所定の周波数領域を任意の値を境界として低周波領域と高周波領域に分け、 The predetermined frequency region is divided into a low frequency region and a high frequency region with an arbitrary value as a boundary,
当該低周波領域と高周波領域において前記パターン形状の特徴を表す指標を算出することを特徴とする電子線装置。 An electron beam apparatus characterized by calculating an index representing the feature of the pattern shape in the low frequency region and the high frequency region.
前記試料が、ゲートを有するトランジスタが形成された半導体素子であって、 The sample is a semiconductor element in which a transistor having a gate is formed,
前記所定の周波数範囲の上限あるいは下限として、前記ゲートのゲート幅の逆数を用いることを特徴とする電子線装置。 The electron beam apparatus according to claim 1, wherein a reciprocal of a gate width of the gate is used as an upper limit or a lower limit of the predetermined frequency range.
前記コンピュータは、前記パターンの幅の変動成分を取り除いた値を、周波数が０に相当する前記フーリエ係数の絶対値を用いて算出することを特徴とする電子線装置。 The electron beam apparatus according to claim 1, wherein the computer calculates a value obtained by removing a fluctuation component of the pattern width by using an absolute value of the Fourier coefficient corresponding to a frequency of zero.
前記周波数範囲の上限と下限を設定する入力手段を備えたことを特徴とする電子線装置。 An electron beam apparatus comprising input means for setting an upper limit and a lower limit of the frequency range.
前記評価対象パターン形状の特徴を表す指標が表示される表示手段を備えたことを特徴とする電子線装置。 An electron beam apparatus comprising: a display unit that displays an index representing the characteristics of the evaluation target pattern shape.
前記表示手段には、前記フーリエ係数の絶対値もしくはフーリエ係数の絶対値の二乗を前記周波数に対してプロットした図が表示されることを特徴とする電子線装置。 2. The electron beam apparatus according to claim 1, wherein the display means displays a diagram in which the absolute value of the Fourier coefficient or the square of the absolute value of the Fourier coefficient is plotted against the frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007196889A JP2007333745A (en) | 2007-07-30 | 2007-07-30 | Method of evaluating pattern shape, evaluating device, and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007196889A JP2007333745A (en) | 2007-07-30 | 2007-07-30 | Method of evaluating pattern shape, evaluating device, and method of manufacturing semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004222737A Division JP2006038779A (en) | 2004-07-30 | 2004-07-30 | Evaluation method and evaluation device of pattern shape, and manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007333745A JP2007333745A (en) | 2007-12-27 |
| JP2007333745A5 true JP2007333745A5 (en) | 2009-01-08 |
Family
ID=38933326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007196889A Pending JP2007333745A (en) | 2007-07-30 | 2007-07-30 | Method of evaluating pattern shape, evaluating device, and method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007333745A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5481107B2 (en) * | 2009-06-25 | 2014-04-23 | 株式会社日立ハイテクノロジーズ | Dimensional measuring apparatus and semiconductor device manufacturing method using the same |
| JP5452270B2 (en) * | 2010-02-12 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | Dimensional measuring apparatus and semiconductor device manufacturing method using the same |
| JP6753934B2 (en) * | 2015-12-18 | 2020-09-09 | エーエスエムエル ネザーランズ ビー．ブイ． | Optical system and method |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62135710A (en) * | 1985-12-10 | 1987-06-18 | Nec Corp | Inspecting method for minute pattern |
| JPS62195512A (en) * | 1986-02-21 | 1987-08-28 | Kobe Steel Ltd | Measuring method for surface roughness |
| JP2576007B2 (en) * | 1992-10-20 | 1997-01-29 | 株式会社ミツトヨ | Surface roughness measuring device |
| JPH07332920A (en) * | 1994-04-14 | 1995-12-22 | Toyota Motor Corp | Apparatus and method for measuring uneven surface of work |
| JPH10253750A (en) * | 1997-03-13 | 1998-09-25 | Mitsubishi Electric Corp | Fm-cw radar device |
| JP3816660B2 (en) * | 1998-03-16 | 2006-08-30 | 株式会社東芝 | Pattern evaluation method and pattern evaluation apparatus |
| JP2002243428A (en) * | 2001-02-13 | 2002-08-28 | Hitachi Ltd | Method and device for pattern inspection |
| JP4364524B2 (en) * | 2003-02-20 | 2009-11-18 | 株式会社日立製作所 | Pattern inspection method |
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2007
- 2007-07-30 JP JP2007196889A patent/JP2007333745A/en active Pending
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