JP2007329327A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing an increase in cost and in thickness, and mounting an electronic component having a large thickness. <P>SOLUTION: The semiconductor device 10 comprises the electronic component 12 mounted on an interconnection substrate 11 and a plug 13 for plug connection. A plug adapter 20 having a plurality of plug terminals 24 on its surface respectively connected to an interconnection 15 within the interconnection substrate 11 is mounted on a lower edge part of the interconnection substrate 11, and the plurality of plug terminals 24 comprise the plug 13 in their entirety. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof, and more specifically, as a module semiconductor device in which an electronic component such as an IC chip is mounted on a wiring board and is detachably connected to a socket on a motherboard by plug connection. The present invention relates to a suitable semiconductor device and a manufacturing method thereof.

  In a module semiconductor device, a plurality of IC chips are mounted on a common wiring board, and the plurality of IC chips are connected to each other by wiring in the wiring board. The module semiconductor device has a plug along one edge, and the plug is detachably connected to a socket on the motherboard. 8A and 8B are a side view and a front view of a conventional module semiconductor device, respectively. The module semiconductor device 50 includes a wiring board 51 and a plurality of IC chips 52 mounted on the wiring board 51.

  The lower edge portion of the wiring board 51 constitutes a plug 53 that is plug-connected to the socket, and a plurality of plug terminals 54 are arranged on the front surface and the back surface of the plug 53. Each plug terminal 54 is arranged corresponding to each of a plurality of socket terminals of a socket (not shown), and is electrically connected to the socket terminal and mechanically fixed by inserting the plug into the socket. Is done. At both side edges of the wiring board 51, notches 55 are formed by cutting the side edges into a semicircular shape. When the module semiconductor device 50 is mounted on the socket, the latch of the socket is engaged with the notch 55 to assist mechanical fixation of the module semiconductor device 50 to the socket.

  Incidentally, in recent years, there has been a demand for further thinning of the module semiconductor device due to the miniaturization of electronic devices. Here, in order to ensure electrical and mechanical connection with the socket, it is necessary to secure a thickness of the wiring board 51 that is substantially the same as the width of the socket. Therefore, the overall thickness of the module semiconductor device has been reduced by limiting the thickness of electronic components such as the IC chip 52 mounted on the wiring board. However, when the thickness of the electronic component is limited, the types of electronic components that can be mounted on the module semiconductor device are limited, and the configuration of the module semiconductor device is restricted.

As shown in FIG. 9, Patent Document 1 provides a step 62 on the surface of the wiring substrate 61, for example, and mounts a thick component 63 on the surface portion of the substrate surface on the side where the thickness is reduced. In addition, a module semiconductor device 60 is described in which plug terminals 65 are formed on the surface portion of the substrate surface on the thicker side.
Japanese Patent Laid-Open No. 10-199909 (FIG. 1)

  The module semiconductor device 60 of Patent Document 1 has a problem that costs increase due to the manufacture of substrates having different thicknesses. Further, when the step 62 exists on the substrate surface, it is difficult to apply a pattern forming technique using a mask when forming a solder layer on the electrode pad portion on the substrate surface, which causes a problem that the manufacturing throughput is reduced. .

  In view of the above, the present invention is capable of mounting an electronic component having a large thickness while suppressing an increase in cost, suppressing an increase in the thickness of the semiconductor device, and a semiconductor device suitable as a module semiconductor device and its manufacture It aims to provide a method.

In order to achieve the above object, a semiconductor device of the present invention includes an electronic component mounted on a wiring board and a plug for plug connection.
An adapter board having a plurality of plug terminals connected to wirings in the wiring board on the surface is mounted on the edge of the wiring board, and the plurality of plug terminals constitute the plug as a whole. To do.

Further, the method for manufacturing a semiconductor device according to the present invention includes a step of forming a pad terminal on the surface of the wiring substrate,
Forming a solder layer on the surface of the pad terminal;
Mounting an adapter substrate having a wiring corresponding to the pad terminal and a plug terminal connected to the wiring on the edge of the wiring substrate;
And melting the solder layer to connect the pad terminal and the wiring connected to the plug terminal.

  In the semiconductor device of the present invention, the adapter substrate is interposed between the wiring substrate and the socket when the semiconductor device is inserted into the socket. As a result, the thickness of the wiring board can be made smaller than before, and an electronic component having a large thickness can be mounted on the wiring board while suppressing an increase in the overall thickness of the semiconductor device.

  In the semiconductor device of the present invention, the wiring board has a simple configuration similar to that of the prior art except that the thickness thereof is reduced and an electrode for connection to the adapter board is attached instead of the plug terminal. The adapter board can also be configured with a simple board including plug terminals and electrodes for connection with the wiring board. Thereby, an increase in the cost of manufacturing the semiconductor device can be suppressed.

  In the semiconductor device and the manufacturing method thereof according to the present invention, it is not necessary to form a step on the front surface or the back surface of the wiring substrate, and it can be formed flat. Therefore, a solder layer can be formed using a known pattern forming technique using a mask. . Further, when connecting the adapter substrate onto the wiring substrate, the same solder connection as that of a normal electronic component can be used, so that a decrease in throughput of manufacturing the semiconductor device can be suppressed and an increase in cost can be suppressed.

  In the semiconductor device of the present invention, the adapter substrate is mounted on both or one of the front surface side and the back surface side of the wiring substrate. In a preferred embodiment of the semiconductor device according to the present invention, the edge of the wiring board is located outside the corresponding edge of the adapter board. The edge of the semiconductor device can be tapered without performing cutting or the like that requires high processing costs.

  In a preferred embodiment of the semiconductor device according to the present invention, the wiring for connecting the plug terminal and the wiring of the wiring board is formed along the edge surface and the back surface of the adapter board. It is not necessary to form a dummy lead-out wiring, and therefore, it is possible to suppress the peeling of the plug terminal due to the peeling of the dummy lead-out wiring and to suppress a short circuit and a disconnection.

  In a preferred embodiment of the semiconductor device of the present invention, the wiring formed along the back surface of the adapter substrate is solder-connected to the pad terminal on the wiring substrate. When the adapter board is attached to the wiring board, a decrease in throughput can be suppressed by performing the same solder connection process as that of a normal electronic component.

  In a preferred embodiment of the semiconductor device of the present invention, a dummy adapter substrate is mounted in the vicinity of the notch of the wiring substrate, and the dummy adapter substrate is integrated with an insulator of the adapter substrate mounted on the edge portion. Alternatively, a separate insulator is provided. By matching the total thickness of the wiring board and the dummy adapter board with the engagement dimension of the latch, the semiconductor device can be securely fixed to the socket.

  In a preferred embodiment of the semiconductor device of the present invention, another wiring board is mounted on the wiring board, and the other wiring board is integrated with or separated from the insulator of the adapter board mounted on the edge. Having a body insulator. By detouring the wiring in the wiring board, the density of the wiring in the wiring board can be reduced.

  Embodiments of the present invention will be described below in detail with reference to the drawings. FIGS. 1A and 1B are a side view and a front view, respectively, of a module semiconductor device constituting a semiconductor device according to an embodiment of the present invention. The module semiconductor device 10 has a standardized dimensional standard, is configured as a module that is detachably connected to a socket of SO-DIMM, and is mounted on the wiring board 11 and the front and back surfaces of the wiring board 11. And a plurality of electronic components 12 such as IC chips. The wiring substrate 11 includes, for example, four insulating layers, and is configured as a multilayer wiring substrate including a total of five wiring layers on the front surface side, the back surface side, and the inside of the wiring substrate 11.

  The lower edge of the module semiconductor device 10 constitutes a plug 13 that is plug-connected to a socket on the motherboard. On both side edge portions of the module semiconductor device 10, notches 14 are formed by cutting out the side edge portions in a substantially semicircular shape. The notch 14 is engaged with a latch of the socket when the module semiconductor device 10 is attached to the socket. In the module semiconductor device 10 of the present embodiment, plate-like plug adapters 20 are disposed on the front and back surfaces of the wiring substrate 11 in the plug 13, and plug terminals 24 are formed on the front surface of the plug adapter 20. A plate-shaped notch adapter 30 is also provided on the front and back surfaces of the wiring board 11 in the vicinity of the notch 14.

  FIG. 2 is a plan view showing a configuration in which the plug adapter and the notch adapter are removed from the module semiconductor device of FIG. For example, 100 electrode pads 16 are arranged at equal intervals on the lower edge of the wiring board 11 so as to be connected to the wirings 15 of the wiring board. Fixing dummy pads 17 that are not connected to the wiring 15 are disposed at both ends in the arrangement direction of the electrode pads 16. A fixing dummy pad 18 is also provided in the vicinity of the notch 14. The electrode pad 16 and the dummy pads 17 and 18 are formed in the same layer as the wiring 15 formed on the surface 11a of the wiring substrate 11, and the surface is plated with gold. The back side of the wiring board 11 has the same configuration.

  FIG. 3 shows a configuration of the plug adapter 20 viewed from the inside. The plug adapter 20 includes a single-layer insulating layer 21, and an electrode pad 22 and a fixing pad are provided on the inner surface of the insulating layer 21 corresponding to the electrode pad 16 and the dummy pad 17 of the wiring substrate 11 shown in FIG. 2. The dummy pads 23 are provided. The electrode pads 22 are individually connected to corresponding plug terminals 24 formed on the outer surface of the plug adapter 20. The electrode pad 22 and the plug terminal 24 are formed with the same width dimension.

  FIG. 4 shows a cross section of the plug adapter and its vicinity along the line IV-IV in FIG. The insulating layer 21 is formed of a glass epoxy substrate, for example. The electrode pad 22, the plug terminal 24, and the wiring 25 that connects them are integrally formed across the inner surface, the edge surface 20b, and the outer surface 20a of the insulating layer 21, for example, by gold plating. The wiring 25 is also formed with the same width as the electrode pad 22 and the plug terminal 24.

  The plug adapter 20 is connected to the wiring board 11 by connecting the electrode pad 22 (dummy pad 23) of the plug adapter to the electrode pad 16 (dummy pad 17) of the wiring board via the solder layer 26, respectively. Fixed. When the plug adapter 20 is fixed to the wiring substrate 11, the lower edge portion thereof is disposed so as to be positioned slightly above (inner edge side) the lower edge portion of the wiring substrate 11.

  The notch adapter 30 includes a single insulating layer and a fixing dummy pad 32 formed on the inner surface of the insulating layer. The insulating layer and the dummy pad 32 are formed with the same dimensions as the dummy pad 18 of the wiring board. FIG. 5 shows a cross section of the notch adapter and its vicinity along the line V-V in FIG. The insulating layer 31 is, for example, a glass epoxy substrate, and the dummy pad 32 is formed by, for example, gold plating. The notch adapter 30 is fixed to the wiring board 11 by connecting the dummy pad 32 of the notch adapter to the dummy pad 18 of the wiring board via the solder layer 33. When the notch adapter 30 is fixed to the wiring board 11, the notch adapters 30 are arranged such that the shapes of the side edge portions overlap each other.

The dimensions of each part of the module semiconductor device 10 are as follows, for example. The thickness T _PCB of the wiring board 11 shown in FIG. 1A is 0.60 mm. Note that T _PCB is defined as the thickness including the wiring layers on the front and back surfaces of the wiring substrate 11, the electrode pads 16, and the dummy pads 17 and 18. Shown in FIG. 4, the thickness _{T 1} of the insulating layer 21 is a 0.08 mm, the electrode pads 22 are integrally formed, the plug terminals 24, and the thickness _{T 2} of the wiring 25 is 0.035 mm. The thickness _{T 3} of the solder layer 26 is 0.05 mm, the overall thickness T _plug-Adapter plug adapter 20 including the solder layer 26 is 0.20 mm. Shown in FIG. 5, the thickness _{T 4} of the insulating layer 31 is 0.115 mm, the thickness _{T 5} of the dummy pad 32 is 0.035 mm. The thickness T ₆ of the solder layer 33 is 0.05 mm, and the total thickness T _{notch-adaptor} of the notch adapter 30 including the solder layer 33 is 0.20 mm.

As described above, the thicknesses T _module-plug and T _module-notch of the module semiconductor device 10 in the vicinity of the plug 13 and the notch 14 are both 1.00 mm, and the thickness specified by SO-DIMM is within 1.00 ± 0.10 mm. Satisfied.

The electronic component 12 shown in FIG. 1 is configured as, for example, a BGA connection type IC package, and includes a heat sink (not shown) on the surface. The thickness T _part of the electronic component 12 including the heat sink and the solder layer is, for example, 1.6 mm, and the thickness T _module of the module semiconductor device 10 in the mounting portion of the electronic component 12 is 3.8 mm. This value satisfies a thickness of 3.8 mm or less specified by JEDEC (Joint Electron Device Engineering Council). In the conventional configuration shown in FIG. 8, in order to make T _module 3.8 mm or less, the thickness T _part of the IC chip 52 including the heat sink and the solder layer needs to be 1.4 mm or less.

The width L ₁ of the wiring board 11 is 67.6 mm, and the height L ₂ is 30 mm. The width of the plug adapter 20 is equal to the width _{L 1} of the wiring board 11, the height _{L 3} is 2.55 mm. A distance L ₄ between the lower edge portion of the wiring board 11 and the lower edge portion of the plug adapter 20 is 0.3 mm. The lengths of the electrode pad 22 and the plug terminal 24 are equal to the height L ₃ of the plug adapter 20. The width of the plug terminals 24 is 0.45 ± 0.03 mm, and the pitch of the arrangement of the plug terminals 24 is 0.6 mm.

  When the plug adapter 20 is manufactured, a mask is formed on the insulating layer 21 to expose the electrode pad 22, the dummy pad 23, the plug terminal 24, and the region for forming the wiring 25, and an electrode pad is formed on the exposed portion by plating. 22, dummy pads 23, plug terminals 24, and wirings 25 are formed. Similarly, the notch adapter 30 is manufactured by forming the dummy pad 32 on the insulating layer 31 by plating.

  In manufacturing the module semiconductor device 10, after forming the wiring substrate 11, a solder layer is formed on the pads on the wiring substrate 11 by using a pattern forming technique using a mask. Next, the electronic component 12, the plug adapter 20, and the notch adapter 30 are mounted on the wiring board 11, and the solder layer is melted using a known solder connection technique. The module semiconductor device 10 shown in FIG. 1 is completed by connecting the plug adapter 20 and the pad of the notch adapter 30. The thickness of the solder layer interposed between the pads between the wiring board 11 and the plug adapter 20 and the notch adapter 30 is adjusted by controlling the amount of the solder layer formed on the wiring board 11.

  In the module semiconductor device 10 according to the present embodiment, the plug adapter 20 and the notch adapter 30 are disposed in the plug 13 and the notch 14, respectively. The plug adapter 20 and the notch adapter 30 are interposed when the plug is inserted into the socket. ing. Accordingly, the electronic component 12 having a large thickness can be mounted on the wiring substrate 11 while the thickness of the wiring substrate 11 is made smaller than before and the increase in the overall thickness of the module semiconductor device 10 is suppressed.

  In the module semiconductor device 10 of the present embodiment, the wiring substrate 11 is conventional except that the thickness thereof is reduced and the electrode pads 16 and the dummy pads 17 and 18 are attached to the surface instead of the plug terminals. It has the same simple configuration. In addition, both the plug adapter 20 and the notch adapter 30 have a simple configuration in which a metal layer is formed on a single insulating layer. Thereby, an increase in cost of manufacturing the module semiconductor device 10 can be suppressed.

  Since the step is not formed on the front surface or the back surface of the wiring substrate 11 and is flat, a solder layer can be formed using a known pattern forming technique using a mask. Further, when connecting the plug adapter 20 and the notch adapter 30 onto the wiring board 11, the same solder connection as that of a normal electronic component is performed. Therefore, it is possible to suppress a decrease in throughput of manufacturing the module semiconductor device 10 and suppress an increase in cost.

  In a module semiconductor device, generally, a lower edge portion of a wiring board is formed in a tapered shape, thereby facilitating insertion into a socket. Such a wiring board can be formed by, for example, cutting, but it is not easy to cut the lower edge portion of the thin wiring board in a tapered shape, and there is a problem that the cost increases. On the other hand, in the module semiconductor device 10 of the present embodiment, cutting is performed by connecting the plug adapter 20 so that the lower edge portion is positioned slightly above the lower edge portion of the wiring board 11. The lower edge portion of the module semiconductor device 10 can be tapered.

  In the conventional module semiconductor device, when plug terminals are formed, plug terminals 54 connected to each other via dummy lead wires 55 are formed on the wiring board 51 as shown in FIG. As shown in FIG. 10B, the dummy lead wiring 57 is cut at the lower edge portion 56 of the wiring board. In this case, since the edge of the dummy lead wire 57 is exposed at the lower edge portion 56 of the wiring board, the plug lead 54 is peeled off due to the dummy lead wire 57 being peeled off from the edge when repeated insertion into the socket, causing a short circuit or disconnection. There was a problem that occurred. On the other hand, in the module semiconductor device 10 of this embodiment, since the wiring 25 and the electrode pad 22 are continuously formed from the plug terminal 24 to the edge surface and the inner surface of the plug adapter 20, the plug terminal 24 is It is difficult to peel off and short circuit and disconnection can be suppressed.

  FIG. 6 is a front view showing the configuration of the module semiconductor device according to the first modification of the embodiment. In the module semiconductor device 40, the plug adapter 20 and the notch adapter 30 in the above embodiment are integrally formed to constitute an integrated adapter 41. By integrally configuring the plug adapter 20 and the notch adapter 30, man-hours required for component mounting can be reduced, and the manufacturing cost of the module semiconductor device 40 can be further reduced.

  FIG. 7 is a front view showing the configuration of the module semiconductor device according to the second modification of the embodiment. An external wiring substrate 43 is disposed at the center of the module semiconductor device 42. The external wiring board 43 is configured as a multilayer wiring board including, for example, three insulating layers and a total of four wiring layers inside and outside the external wiring board 43. The wiring board 11 is connected to the wiring board 11 by a BGA method using solder balls, and is connected to wiring inside the wiring board 11. As a result, the external wiring board 43 forms a detour for the wiring of the wiring board 11. The external wiring board 43 has a thickness of about 1.4 mm including solder.

  According to the module semiconductor device 42 of the present modification, the external wiring board 43 is disposed in the center of the wiring board 11 having a high wiring density, and the wiring in the wiring board 11 is bypassed, thereby Wiring density can be reduced. In this modification, in particular, the density of the wiring in the wiring board 11 can be effectively reduced by disposing the external wiring board 43 having many wiring layers. The external wiring board may be formed in the same layer structure as the plug adapter or the notch adapter and may be configured integrally therewith.

  In the above embodiment, the insulating layer 21 of the plug adapter and the insulating layer 31 of the notch adapter are made of glass epoxy material, but may be made of film material or the like. Further, resin can be used for connection of the notch adapter 30 to the wiring board 11. In the above embodiment, the plug adapter 20 and the notch adapter 30 are disposed on the front and back surfaces of the wiring board 11, respectively. However, the notch adapter having a larger thickness on either the front or back surface of the wiring board 11. And a plug adapter may be provided.

  As described above, the present invention has been described based on the preferred embodiments. However, the semiconductor device and the manufacturing method thereof according to the present invention are not limited to the configurations of the above embodiments. The semiconductor device and the manufacturing method thereof subjected to the above correction and change are also included in the scope of the present invention.

FIGS. 1A and 1B are a side view and a front view, respectively, of a module semiconductor device constituting a semiconductor device according to an embodiment of the present invention. It is a top view which shows the structure which removed the notch adapter and the plug adapter in the module semiconductor device of FIG. It is a top view which shows the structure which looked at the plug adapter from the inner side. It is sectional drawing which shows the cross section of a plug adapter and its vicinity along the IV-IV line of FIG.1 (b). It is sectional drawing which shows the notch adapter and the cross section of the vicinity along the VV line of FIG.1 (b). It is a front view which shows the structure of the module semiconductor device which concerns on the 1st modification of embodiment. It is a front view which shows the structure of the module semiconductor device which concerns on the 2nd modification of embodiment. 8A and 8B are a side view and a front view of a conventional module semiconductor device, respectively. 10 is a side view showing a configuration of a module semiconductor device described in Patent Document 1. FIG. 10 (a) and 10 (b) are plan views sequentially showing each manufacturing stage for manufacturing a plug terminal of a conventional module semiconductor device.

Explanation of symbols

10, 40, 42: Module semiconductor device (semiconductor device)
11: Wiring board 11a: Surface 12 (of wiring board) 12: Electronic component 13: Plug 14: Notch 15: Wiring 16: Electrode pad 17, 18: Dummy pad 20: Plug adapter 20a: Outer surface 20b (of plug adapter): Edge surface 21 (of plug adapter): Insulating layer 22: Electrode pad 23: Dummy pad 24: Plug terminal 25: Wiring 26: Solder layer 30: Notch adapter 30a: Outer surface 31 (of notch adapter): Insulating layer 32: Dummy Pad 33: Solder layer 41: Adapter 43: External wiring board

Claims (8)

In a semiconductor device comprising an electronic component mounted on a wiring board and a plug for plug connection,
An adapter board having a plurality of plug terminals connected to wirings in the wiring board on the surface is mounted on the edge of the wiring board, and the plurality of plug terminals constitute the plug as a whole. Semiconductor device.   The semiconductor device according to claim 1, wherein the adapter substrate is mounted on both a front surface side and a back surface side of the wiring substrate.   3. The semiconductor device according to claim 1, wherein an edge portion of the wiring substrate is positioned outside a corresponding edge portion of the adapter substrate.   The semiconductor device according to claim 1, wherein wiring connecting the plug terminal and the wiring of the wiring board is formed along an edge surface and a back surface of the adapter board.   The semiconductor device according to claim 4, wherein wiring formed along the back surface of the adapter substrate is solder-connected to pad terminals on the wiring substrate.   The dummy adapter board is mounted in the vicinity of the notch of the wiring board, and the dummy adapter board has an insulator that is integral with or separate from the insulator of the adapter board that is mounted on the edge. The semiconductor device as described in any one of -5.   7. Another wiring board is mounted on the wiring board, and the another wiring board has an insulator that is integral with or separate from the insulator of the adapter board that is mounted on the edge. A semiconductor device according to any one of the above. Forming pad terminals on the surface of the wiring board;
Forming a solder layer on the surface of the pad terminal;
Mounting an adapter substrate having a wiring corresponding to the pad terminal and a plug terminal connected to the wiring on the edge of the wiring substrate;
And a step of melting the solder layer to connect the pad terminal and the wiring connected to the plug terminal.

Images