JP2007328953A - Plasma device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma device having a high treating efficiency with small size. <P>SOLUTION: The plasma device 1 treats a treating surface 1001 of a workpiece 100 by plasma while transferring the workpiece 100 of long shape in the longitudinal direction, and comprises a drum 4 on which the workpiece 100 is wound with the treating surface 1001 on the outer circumference side, an electrode 7 which is installed opposed to the outer circumference face of the drum 4, a high frequency power supply 8 to apply voltage between the electrode 7 and the drum 4, and a gas supply means 9 to supply gas between the electrode 7 and the drum 4. While supplying the gas between the electrode 7 and the drum 4, and applied voltage between the electrode 7 and the drum 4, plasma is generated by activating the gas, and the treating surface 1001 of the workpiece 100 wound around the drum 4 is treated by the plasma. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a plasma apparatus for processing a long workpiece with plasma.

As a wiring board that supports the miniaturization of electronic components in recent years, there is an FPC (Flexible Printed Circuit) substrate in which wiring is formed on a polymer substrate such as polyimide using a COF (Chip on Film) technology.
Such an FPC board is manufactured by subjecting a tape-shaped film (raw material) to be a substrate to various processes such as film formation, etching, and surface modification of a conductive material and an insulating material, and dividing the film into predetermined dimensions. The

  Among these, processing using plasma, such as dry etching, includes a chamber to which a gas supply means is connected and a pair of flat plate electrodes disposed in opposition to the chamber, while supplying a predetermined gas into the chamber. Using a plasma device that generates plasma by applying a voltage between a pair of flat plate electrodes, the tape is caused to travel linearly between a pair of flat plate electrodes in which plasma is generated, It is performed by sequentially processing with plasma (for example, refer to Patent Document 1).

  By the way, when performing plasma processing with a relatively low processing rate by using such a plasma apparatus, it is necessary to lengthen the time during which the workpiece is exposed to plasma (processing time) in order to perform sufficient processing. As a method of increasing the processing time, (1) a method of slowing the traveling speed of the tape traveling between a pair of flat plate electrodes, (2) a method of increasing the width of the flat plate electrodes in the traveling direction of the tape, and the like are used.

However, (1) in the method of slowing down the running speed of the tape, the operation time of the apparatus that is consumed until the plasma processing on the tape is completed becomes long, so that the amount of gas consumption increases and the cost increases. Occurs.
Further, (2) the method of increasing the width of the flat plate electrode has a problem that the processing area becomes large, but the plasma apparatus becomes large and requires a large installation space.

JP-A-6-265864

  An object of the present invention is to provide a plasma apparatus that is small and has high processing efficiency.

Such an object is achieved by the present invention described below.
The plasma apparatus of the present invention is a plasma apparatus that processes a surface to be processed of the workpiece with plasma while running a long workpiece in the longitudinal direction,
A drum on which the workpiece surface of the workpiece is disposed on the outer peripheral side and the workpiece is wound thereon;
An electrode provided facing the outer peripheral surface of the drum;
A power source for applying a voltage between the electrode and the drum;
Gas supply means for supplying gas between the electrode and the drum;
While supplying gas between the electrode and the drum, by applying a voltage between the electrode and the drum, the gas is activated to generate plasma, and the plasma is wound around the drum. The surface to be processed of the workpiece is processed.
Thereby, a small plasma apparatus with high processing efficiency can be provided. As a result, gas consumption can be suppressed. In addition, since the work is wound around the drum and travels, the plasma treatment time becomes long, and even in the case of a work having a low plasma treatment rate, the plasma treatment can be performed at a desired rate in a short time.

In the plasma apparatus of the present invention, it is preferable that the work wound around the drum is wound spirally.
Thereby, the length of the workpiece | work which exists between an electrode and a drum becomes large, and a long workpiece | work can be plasma-processed at once with a small apparatus. In addition, since the work is wound around the drum and travels, the plasma treatment time becomes long, and even in the case of a work having a low plasma treatment rate, the plasma treatment can be performed at a desired rate in a short time.

In the plasma apparatus of the present invention, it is preferable that the drum has positioning means for determining a position of the wound workpiece with respect to the drum on an outer peripheral surface thereof.
Thereby, since the position of the work wound around the drum becomes appropriate, for example, the work is prevented from being overlapped due to the deviation of the work, and the surface to be processed of the work can be uniformly plasma processed.

In the plasma apparatus of the present invention, it is preferable that the positioning means is a groove or a protrusion provided on the outer peripheral surface of the drum.
As a result, the position of the work wound around the drum can be determined reliably, so that it is possible to reliably prevent inconveniences such as overlapping of the work due to deviation of the work, and the surface to be processed of the work is uniformly plasmad. Can be processed.

In the plasma apparatus of the present invention, it is preferable that the electrode is provided along a circumferential direction of the drum.
Thereby, the area | region which generate | occur | produces a plasma becomes large and it can plasma-process a long workpiece | work at once with a small apparatus. As a result, the gas consumption can be further suppressed.
In the plasma apparatus of the present invention, it is preferable that the electrode is disposed over the entire circumference of the drum.
Thereby, the area | region which generate | occur | produces a plasma becomes large and it can plasma-process a long workpiece | work at once with a small apparatus. As a result, the gas consumption can be further suppressed.
In the plasma apparatus of the present invention, it is preferable that a dielectric member is provided between the electrode and the drum.
Thereby, discharge can be generated between the electrode and the drum reliably and efficiently.

In the plasma apparatus of the present invention, it is preferable to have a chamber that accommodates the drum and includes a gas inlet provided at one end of the drum and a gas outlet provided at the other end of the drum.
Thereby, gas can be efficiently supplied between an electrode and a drum, and gas consumption can be reduced.

In the plasma apparatus of the present invention, it is preferable that the chamber is in contact with the electrode through the dielectric member on an outer peripheral surface thereof.
Thereby, discharge can be generated between the electrode and the drum more reliably and efficiently.
In the plasma apparatus of the present invention, it is preferable that the chamber has a work introduction port through which the work is introduced into the chamber and a work discharge port through which the work is discharged from the chamber.
As a result, a workpiece can be introduced into the chamber from the outside at any time and discharged out of the chamber, and a long workpiece can be plasma-treated simply and efficiently.

In the plasma apparatus of the present invention, a workpiece delivery means for delivering the workpiece,
It is preferable that the apparatus further comprises a work take-up means for taking up the work fed from the work feed means and wound around the drum.
Thereby, the plasma processing of a longer workpiece | work can be performed simply and the consumption of gas can be suppressed significantly compared with the past. Also, by winding the work wound around the drum, the work travels with the rotation of the drum, so that the plasma processing time becomes longer, and even in the case of a work with a low plasma processing rate, the desired rate can be achieved in a short time. Can be plasma treated.

In the plasma apparatus of the present invention, it is preferable that a workpiece winding speed of the workpiece winding means is larger than a workpiece feeding speed of the workpiece feeding means.
As a result, the workpiece can be reliably wound around the workpiece winding means with a relatively large tension, and the displacement of the workpiece and the overlap of the workpieces can be prevented due to the looseness of the workpiece wound around the drum.

In the plasma apparatus of the present invention, it is preferable that the workpiece winding means is disposed on the gas inlet side of the chamber, and the workpiece delivery means is disposed on the gas outlet side of the chamber.
As a result, the direction in which the gas flows and the direction in which the workpiece travels are reversed, so the time required for the workpiece to come into contact with the unnecessary reaction product generated between the electrode and the drum is reduced, and the unnecessary reaction product for the workpiece is reduced. Can be reduced.

In the plasma apparatus of the present invention, the gas exhaust port of the chamber is provided with a gas exhaust unit that exhausts the gas supplied from the gas introduction port, and the gas exhaust unit decompresses the inside of the chamber by the gas exhaust unit. It is preferable to discharge gas from the outlet.
Thereby, it can suppress that gas leaks from the opening part of a workpiece | work introduction port and a workpiece | work discharge port.
In the plasma apparatus of the present invention, it is preferable to include a heating means for heating the gas before supplying the gas between the electrode and the drum.
As a result, heat energy is applied to the gas, plasma ignitability is improved, and plasma can be easily generated.

Hereinafter, the plasma apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
<First Embodiment>
(1) Plasma Device FIG. 1 is a schematic view showing an embodiment of the plasma device of the present invention, FIG. 2 is a longitudinal sectional view schematically showing a chamber, a drum, and electrodes provided in the plasma device shown in FIG. [FIG. 2] is a cross-sectional view schematically showing a chamber, a drum, and electrodes provided in the plasma apparatus shown in FIG. 1.
In the following description, the upper side in FIGS. 1 and 2 is referred to as “upper” and the lower side is referred to as “lower”.
Hereinafter, the configuration of each unit will be described in detail with reference to the drawings.

The plasma apparatus 1 shown in each figure generates (generates) plasma and processes the surface (surface) 1001 of a long workpiece (for example, a tape-like film) 100 that is an object to be processed by the plasma. It is a device to do.
The plasma apparatus 1 includes a workpiece delivery reel (work delivery means) 2 for delivering a long workpiece 100, and a workpiece take-up that takes up the workpiece 100 delivered from the workpiece delivery reel 2 and processed in a chamber 5. Reel 3 (work take-up means) 3, drum 4 around which work 100 fed from work delivery reel 2 is wound, drum 4 is housed, chamber 5 in which a plasma generation region is formed, and chamber 5 An electrode 7 fixed to the outer peripheral surface of the electrode 7 through a dielectric member 6, a high-frequency power source 8 for applying a voltage (high-frequency voltage) between the electrode 7 and the drum 4, and a predetermined gas in the chamber 5 A gas supply unit 9 for supplying gas and a gas discharge unit 10 for discharging the gas in the chamber 5 are provided.
The processing on the workpiece 100 is performed while rotating the workpiece 100 wound around the drum 4 for each drum 4 and traveling in the longitudinal direction along the outer peripheral surface of the drum 4.

The workpiece delivery reel 2 has a function of feeding the workpiece 100 to the drum 4.
The work take-up reel 3 has a function of taking out the processed work 100 that is fed from the work feed reel 2 and wound around the drum 4 in the chamber 5.
And it has the flange parts 22 and 32 each attached to the rotating rolls 21 and 31, and the both ends of the rotating rolls 21 and 31, respectively.

In this embodiment, the workpiece delivery reel 2 and the workpiece take-up reel 3 are spaced apart so that their rotation axes are parallel to each other, that is, the workpiece delivery reel 2 is disposed on the gas discharge port side of the chamber 5. The work take-up reel 3 is disposed on the gas inlet side of the chamber 5. Thereby, the workpiece 100 travels in the opposite direction of the gas flow.
On the other hand, in the chamber 5 to be described later, unnecessary reaction products generated as a secondary flow downward. Therefore, the contact time between the reaction product and the workpiece 100 is short, and the influence of unnecessary reaction products on the workpiece 100 can be reduced.
Here, the reaction product is an unnecessary compound that is secondarily generated by the generation of plasma in the plasma generation region 20 where the plasma between the electrode 7 and the drum 4 is generated. For example, SiF _{4 in the} case where a CF-based gas is used for etching SiO ₂ can be used. These are discharged from the chamber 5 through the gas discharge port 52 by the gas discharge means 10.

Although it does not specifically limit as a constituent material of the rotating rolls 21 and 31 and the flange parts 22 and 32, Teflon etc. are mentioned.
One end of the workpiece 100 is attached to the rotary roll 21 of the workpiece delivery reel 2. The workpiece 100 is wound in a predetermined direction (in the present embodiment, counterclockwise). The other end of the workpiece 100 is attached to the rotary roll 31 of the workpiece winding reel 3. The workpiece 100 is wound in the same direction as the workpiece delivery reel 2 with respect to the rotary roll 21. Further, the workpiece 100 fed from the workpiece feeding reel 2 is introduced into the chamber 5 from the workpiece introduction port 58 and wound spirally around the drum 4, and is discharged out of the chamber 5 from the workpiece discharge port 59 to be wound on the workpiece. It is wound on a take-up reel 3.

Since the workpiece 100 is wound around the rotary rolls 21 and 31, the workpiece 100 having a long length can be easily wound only by winding the reel 3 for winding the workpiece.
Moreover, since the workpiece | work 100 is wound helically, the length of the workpiece | work 100 which exists between an electrode and a drum can be enlarged, without enlarging the whole apparatus. Therefore, the workpiece 100 having a longer length than before can be plasma-processed with a small apparatus.
Here, in this embodiment, the rotating rolls 21 and 31 are provided orthogonal to the rotating shafts 41 and 42 of the drum 4. In this case, the workpiece 100 fed from the workpiece feeding reel 2 is rotated by 90 degrees so as to be introduced into the workpiece introduction port 58 of the chamber 5. Thereby, after being introduced into the chamber 5, it can be efficiently wound around the drum 4.
On the other hand, the workpiece 100 discharged from the chamber 5 is rotated 90 degrees to be wound around the workpiece take-up reel 3. Thereby, it can wind around the winding reel 3 without damaging a plasma processing surface.

Rotation driving mechanisms (not shown) are respectively installed on the rotating rolls 21 and 31 of the workpiece feeding reel 2 and the workpiece winding reel 3. And these reels 2 and 3 rotate by operation | movement of this rotational drive mechanism.
This mechanism includes, for example, a motor transmission. By providing the motor transmission, it is possible to control the rotation of the motor, such as the rotation speed and speed. By controlling the rotation in this manner, various workpieces 100 such as the workpiece 100 having a high processing rate and the workpiece 100 having a low processing rate can be efficiently plasma-processed.

  Here, it is preferable that the rotation drive mechanism can adjust the rotation speed (workpiece traveling speed). As a result, the degree of processing of the workpiece 100 can be adjusted, the overall processing time (processing amount per unit time) can be adjusted, and the processing for the workpiece 100 can be optimized. For example, when other conditions are fixed and the traveling speed of the workpiece 100 is decreased, the degree of processing (density) of the workpiece 100 can be increased, that is, more precise processing can be performed.

When the workpiece delivery reel 2 and the workpiece take-up reel 3 are rotated by a rotation drive mechanism, the workpiece 100 is delivered from the workpiece delivery reel 2 and between the workpiece delivery reel 2 and the workpiece take-up reel 3. The belt travels in the longitudinal direction while being wound around a drum 4 to be described later, and is wound around the reel 3 for winding the workpiece.
The rotation speed of the work take-up reel 3 is preferably larger than the rotation speed of the work supply reel 2. As a result, the workpiece 100 delivered from the workpiece delivery reel 2 can be reliably wound on the workpiece take-up reel 3 with a relatively large tension. Further, the looseness of the work 100 wound around the drum 4 can prevent the work 100 from being displaced on the drum 4 and the work 100 from overlapping each other.

  The drum 4 is wound around the workpiece 100 with its processing surface 1001 as the outer peripheral side. The drum 4 is housed in a drum housing space 55 in the chamber 5 and faces the electrode 7 on the outer peripheral surface thereof. The drum 4 includes a roll 43 and a pair of rotating shafts 41 and 42 that protrude from the upper end surface and the lower end surface of the roll 43. The rotation shaft 41 at the upper end surface is rotatably supported by the bearing 531 of the first wall portion 53, and the rotation shaft 42 at the lower end surface is rotatably supported by the bearing 541 of the second wall portion 54. The rotating shafts 41 and 42 are substantially orthogonal to the electrode 7.

A workpiece 100 introduced into the drum housing space 55 from the workpiece introduction port 58 is wound around the outer peripheral surface of the drum 4 in a spiral manner around the surface to be processed 1001 (in this embodiment, counterclockwise). The workpiece 100 wound around the drum 4 travels spirally along the outer peripheral surface of the drum 4 when the workpiece feeding reel 2 and the workpiece winding reel 3 are rotationally driven.
Further, the drum 4 rotates following the traveling of the workpiece 100 by the frictional force between the surface of the workpiece 100 opposite to the surface to be processed 1001 and the outer peripheral surface of the drum 4.

  The diameter of the drum 4 varies depending on the allowable bending rate of the workpiece, but is preferably about φ50 mm to φ300 mm, and more preferably φ100 mm to φ200 mm. Within such a range, the plasma device 1 can be appropriately sized and space saving can be realized. Moreover, since it becomes an appropriate size, the workpiece | work 100 can be easily wound along the drum 4. FIG.

  The height of the drum 4 is preferably 150 mm to 1,000 mm, and more preferably 300 mm to 500 mm. Thereby, the plasma apparatus 1 can be made into an appropriate size, and space saving can be realized. Further, when the workpiece 100 is wound around the drum 4, the winding length of the workpiece 100 in the plasma generation region 20 is increased, and the processing time by plasma can be increased.

  Further, the height of the drum 4 is preferably 3 to 30 times, more preferably 4 to 12 times the width of the workpiece 100 (length in the short direction of the workpiece). Within such a range, when the workpiece 100 is wound at an appropriate interval, which will be described later, a sufficient winding length of the workpiece 100 in the plasma generation region 20 described later is obtained, and the processing time by plasma is sufficiently increased. Is possible. Therefore, the workpiece 100 having a low plasma processing rate can be handled. Moreover, the installation space of the plasma apparatus 1 can also be reduced.

The distance between the inner surface of the chamber 5 and the outer peripheral surface of the drum 4 is not particularly limited, but is preferably 0.1 mm to 1 mm, and more preferably 0.3 mm to 0.5 mm. As a result, a sufficient electric field can be applied to the gas supplied to the drum housing space 55 of the chamber 5, and plasma can be generated reliably.
The drum 4 is preferably provided with positioning means 44 for determining the position of the wound work 100 with respect to the drum 4 on the outer peripheral surface thereof. Thereby, the position of the workpiece 100 on the drum 4 is determined, and the workpieces 100 can be prevented from overlapping each other due to the deviation of the wound workpiece 100. As a result, the workpiece 100 can be uniformly plasma processed. Moreover, since the position of the workpiece 100 on the drum 4 is easily determined, the winding of the workpiece 100 can be facilitated.

  As the positioning means 44, a groove or a ridge formed corresponding to the line around which the workpiece 100 is wound (however, an edge of the groove or the ridge is subjected to chamfering, etc., so as to reduce the concentration of the electric field) The groove has a structure having a height that is substantially the same as that of the workpiece, and a pin or boss formed along the line around which the workpiece 100 is wound. Of these, grooves or ridges are preferred.

By using the positioning means 44 as a groove, the workpiece 100 can be accommodated in the groove of the drum 4 and the workpieces 100 can be reliably prevented from overlapping due to the workpiece 100 being displaced.
Further, by using the positioning means 44 as the ridges, the workpiece 100 is positioned on the ridges of the drum 4, and it is possible to reliably prevent the workpieces 100 from overlapping each other due to the workpiece 100 being displaced.

  In the workpiece 100 wound around the drum 4, the interval between adjacent workpieces 100 varies depending on the width of the workpiece, but is preferably a workpiece width + 5 mm to a workpiece width × double distance, and the workpiece width + 10 mm to the workpiece width × It is more preferable that it is 1.5 times. When the interval between the workpieces 100 is within the above range, when the workpieces 100 travel along the drum 4, the possibility that the adjacent workpieces 100 overlap with each other is low, and the plasma processing on the workpieces 100 is performed uniformly. Further, the winding length of the workpiece 100 in the plasma generation region 20 described later is increased, and the plasma processing time can be sufficiently increased.

Further, the number of spiral turns of the workpiece 100 wound spirally around the drum 4 is preferably 2 to 5 turns, although it depends on the width of the workpiece 100. Thereby, the existence length of the workpiece 100 in the plasma generation region 20 to be described later can be increased to some extent, which can contribute to the improvement of the processing efficiency of the plasma processing.
Moreover, although the total length of the workpiece | work 100 currently located in the plasma production | generation area | region 20 changes with process rates, it is preferable that it is 0.3-3m, and it is more preferable that it is 0.5-1m. Thereby, the existence length of the workpiece | work 100 in the plasma production | generation area | region 20 can be taken large, and it can contribute to the improvement of the processing efficiency of a plasma processing.

In this embodiment, the drum 4 functions as a counter electrode to which a voltage is applied between the drum 4 and an electrode 7 described later. Thus, by making the drum 4 also function as a counter electrode, it is not necessary to provide a separate electrode, so that the configuration of the apparatus can be simplified.
The constituent material of the drum 4 is not particularly limited. Examples thereof include simple metals such as copper, aluminum, iron and silver, various alloys such as stainless steel, brass and aluminum alloys, intermetallic compounds, and conductive materials such as various carbon materials. In addition, a dielectric such as alumite treatment or coating by alumina spraying may be applied so that the discharge onto the metal surface does not become an arc state.

  Since such a drum 4 is wound with the workpiece 100, the plasma processing time of the workpiece 100 can be set long. Moreover, since the workpiece | work 100 is wound, the length of the workpiece | work 100 which exists in the plasma production | generation area | region 20 becomes large, and the plasma processing of the workpiece | work 100 with a long length can be performed at once. As a result, the gas consumption can be reduced.

The chamber 5 accommodates the drum 4 and forms a plasma processing space therein. The chamber 5 is in contact with the electrode 7 through the dielectric member 6 on the outer peripheral surface thereof. The chamber 5 has a substantially cylindrical shape. The chamber 5 is formed in a substantially conical shape whose upper end and lower end are each reduced in diameter toward the end. A gas inlet 51 and a gas outlet 52 are provided at the tops of the cones at the upper end (one end of the drum 4) and the lower end (the other end of the drum 4), respectively. A supply pipe 95 of a gas supply unit 9 described later is connected to the gas introduction port 51, and a discharge pipe 102 of a gas discharge unit 10 described later is connected to the gas discharge port 52.
With such a configuration, gas can be efficiently supplied between the electrode and the drum, and gas consumption can be reduced. Moreover, since it is in contact with the electrode 7 through the dielectric member 6, it is possible to generate discharge more reliably and efficiently.

  The height of the chamber 5 varies depending on the height of the drum 4, but is preferably 200 mm to 1100 mm, and more preferably 350 mm to 600 mm. Thereby, the drum 4 can be accommodated and the size of the plasma apparatus 1 can be made into an appropriate size. In addition, the drum 4 can be accommodated to make the plasma generation region 20 a closed system, and gas consumption can be suppressed.

  The diameter of the chamber 5 varies depending on the diameter of the drum 4, but is preferably 60 mm to 310 mm, and more preferably 110 mm to 210 mm. Thereby, the drum 4 can be accommodated and the size of the plasma apparatus 1 can be made into an appropriate size. In addition, the drum 4 can be accommodated to make the plasma generation region 20 a closed system, and gas consumption can be suppressed.

The constituent material of the chamber 5 is not particularly limited, and examples thereof include various plastics such as polytetrafluoroethylene and polyethylene terephthalate, various glasses such as quartz glass, and inorganic oxides. Examples of the inorganic oxide include dielectric materials such as metal oxides such as Al ₂ O ₃ , SiO ₂ , ZrO ₂ , and TiO ₂ , and complex oxides such as BaTiO ₃ (barium titanate).

Here, if a dielectric material having a relative dielectric constant of 10 or more at 25 ° C. is used as a constituent material of the chamber 5, high-density plasma can be generated at a low voltage, and the processing efficiency of the workpiece 100 can be improved. There is an advantage of further improvement, which is preferable.
Moreover, the upper limit of the relative dielectric constant of the usable dielectric material is not particularly limited, but those having a relative dielectric constant of about 10 to 100 are preferable. The dielectric material having a relative dielectric constant of 10 or more corresponds to a metal oxide such as ZrO ₂ or TiO ₂ or a composite oxide such as BaTiO ₃ .

On the inner side surface of the chamber 5, a first wall portion 53 and a second wall portion 54 that partition the space in the chamber 5 up and down are provided on the upper end side and the lower end side, respectively. The space between the first wall portion 53 and the second wall portion 54 in the chamber 5 constitutes a drum housing space 55 in which the drum 4 described later is housed.
In the first wall portion 53 and the second wall portion 54, bearings 531 and 541, respectively, are rotatably supported at the substantially central portion on the drum housing space 55 side so that rotation shafts 41 and 42 of the drum 4 described later are rotatably supported. Is formed.

A plurality of gas circulation ports 532 are formed in the vicinity of the outer peripheral portion of the first wall portion 53 (position facing the drum housing space 55) along the outer periphery. This is preferably arranged uniformly on the first wall 53. Since the gas circulation port 532 is formed facing the drum storage space 55, the gas flows uniformly into the drum storage space 55. As a result, plasma is uniformly generated in the plasma generation region 20, and the workpiece 100 can be uniformly plasma-processed.
Similarly, a gas flow port 542 is formed for the second wall portion 54 and has the same effect.

  In this chamber 5, the gas supplied from the gas supply means 9 is introduced from the gas introduction port 51 into the first space 56 above the first wall portion 53, and the gas distribution port of the first wall portion 53 is introduced. It passes through 532 and is supplied to the drum housing space 55. Then, the plasma, reaction products, and inactive gas generated in the drum housing space 55 pass through the gas flow port 542 of the second wall portion 54, and the second lower side of the second wall portion 54. And is discharged from the gas discharge port 52. In this way, when gas is supplied to the drum housing space 55 via the gas circulation port 532, gas leakage occurs exclusively at the work introduction port 58 and the work discharge port 59. It is possible to prevent the gas from flowing into a useless area and to suppress the gas consumption.

Although it does not specifically limit as a constituent material of the 1st wall part 53 and the 2nd wall part 54, It is preferable that the 1st wall part 53 and the 2nd wall part 54 are the same materials.
In the present embodiment, the second wall portion 54 functions as a lead that conducts the drum and the ground. Therefore, a material having good conductivity is used as the constituent material of the second wall portion 54. Examples of the conductive material include simple metals such as copper, aluminum, iron, and silver, various alloys such as stainless steel, brass, and aluminum alloys, intermetallic compounds, and various carbon materials.

Further, a work introduction port 58 through which the work 100 is introduced into the drum housing space 55 is provided on the side wall surrounding the drum housing space 55 of the chamber 5, and the work 100 in the drum housing space 55 is provided above the side wall. Is provided with a work discharge port 59 from which the water is discharged. The workpiece 100 is introduced into the drum housing space 55 from the workpiece introduction port 58 and travels in the longitudinal direction while being wound around the drum 4 described later. Then, the work 100 is removed from the drum 4 in the upper direction and discharged from the work discharge port 59. Thereby, the workpiece | work 100 can be introduce | transduced and discharged | emitted in the chamber 5 at any time from the outside, and the long workpiece | work 100 can be easily plasma-processed.
The workpiece introduction port 58 and the workpiece discharge port 59 are set to the minimum size at which the workpiece 100 is introduced and discharged in order to minimize the amount of gas leakage. Such a size may be appropriately set depending on the size of the workpiece 100.

The dielectric member 6 generates a discharge between the electrode 7 and the drum 4 to reliably generate plasma. The dielectric member 6 is provided on the outer peripheral surface of the chamber 5 between the electrode 7 and the drum 4. The dielectric member 6 is formed in an annular shape so as to surround at least a part of the drum housing space 55.
A concave portion 61 is formed along the outer periphery at substantially the center of the outer peripheral surface of the dielectric member 6. An electrode 7 described later is embedded in the recess 61.

The total thickness of the recess 61 of the dielectric member 6 and the thickness of the chamber is preferably about 0.01 to 4 mm, and more preferably about 1 to 2 mm. Thereby, an increase in impedance can be prevented, a desired discharge can be generated at a relatively low voltage, and plasma can be generated reliably. Further, it is possible to prevent the occurrence of arc discharge by preventing dielectric breakdown during voltage application.
A constituent material of the dielectric member 6 is not particularly limited, and examples thereof include a dielectric material similar to the constituent material of the chamber 5.

  The electrode 7 generates plasma by being applied with a voltage by the power source 8 together with the opposing drum 4. The electrode 7 is provided so as to face the drum 4 along the circumferential direction of the drum 4. With such a configuration, a region where plasma is generated is increased, and the processing efficiency can be increased. As a result, the gas consumption can be suppressed, and the apparatus can be downsized.

The electrode 7 is disposed over the entire circumference of the drum 4. Thereby, the area | region where a plasma generate | occur | produces further becomes large, and the long workpiece | work 100 can be plasma-processed at once. As a result, the gas consumption can be suppressed, and the apparatus can be downsized.
Further, the electrode 7 includes a dielectric member 6 between the electrode 7 and the drum 4. The dielectric member 6 is formed so as to fill the recess 61 and is fixed in the recess 61 of the dielectric member 6. Thereby, discharge can be generated between the electrode 7 and the drum 4 reliably and efficiently.
In the plasma apparatus 1, the size (height) of the plasma generation region 20 is controlled by the height of the electrode 7.

Examples of a method for fixing the electrode 7 to the recess 61 include methods such as fitting, fusion, and adhesion using an adhesive.
Although it does not specifically limit as a constituent material of the electrode 7, For example, the electroconductive material etc. which are the same as the constituent material of the 2nd wall part 54 are mentioned.
The size of the electrode 7 varies depending on the size of the drum 4 and the number of workpieces wound around the drum. For example, the height is preferably workpiece width + 5 mm to workpiece width × 12 times, workpiece width + 5 mm to workpiece width. It is more preferable that it is x8 times. Thereby, plasma can be generated in a wide range, and a workpiece 100 having a long length can be plasma-treated at a time.

  Further, when the electrode 7 is disposed over the entire circumference of the drum 4, that is, when the electrode 7 has a cylindrical structure, the diameter of the electrode 7 varies depending on the size of the drum 4, but is preferably 60 mm to 310 mm. 110 mm to 210 mm is more preferable. Thereby, the electrode 7 can be arrange | positioned facing the drum 4 and its outer peripheral surface, and a plasma can be generated reliably.

The electrode 7 is connected to a high-frequency power source (power source unit) 8 via a conducting wire (cable or metal plate). On the other hand, the drum 4 is connected to a high-frequency power source 8 through a second wall portion 54 and a conductive wire (cable or metal plate). Thereby, an energization means for applying a voltage (high frequency voltage) between the electrode 7 and the drum 4 can be configured. Thereby, electric discharge can be generated in the drum accommodating space 55 of the chamber 5 with a simple configuration.
In addition, an insulating portion (not shown) that insulates the chamber 5 is formed at a connection portion between the second wall portion 54 and the chamber 5 so that electricity flows into the drum 4 and does not flow into the chamber 5. Yes.

  When the workpiece 100 is treated with plasma, the high frequency power supply 8 is activated and a voltage is applied between the electrode 7 and the drum 4. At this time, an electric field is generated between the drum and the portion corresponding to the electrode on the side wall of the chamber 5. When gas is supplied from the gas supply means 9 described later, discharge occurs and plasma is generated (generated) ) Here, the region where the plasma is generated is referred to as a plasma generation region 20.

The power source 8 applies a voltage between the electrode 7 and the drum 4. The power source 8 is typically a high frequency power source, but a low frequency power source can also be used.
The frequency of the power supply 8 is not particularly limited, but is preferably about 10 to 50 MHz, and more preferably about 10 to 40 MHz.
Although not shown, the circuit includes a matching circuit (impedance matching circuit) for supplied power, frequency adjusting means (circuit) for changing the frequency of the high-frequency power supply 8, and the maximum value (amplitude) of the applied voltage of the high-frequency power supply 8. You may have the voltage adjustment means (circuit) which changes). Thereby, the processing conditions of the plasma processing with respect to the workpiece | work 100 can be adjusted as needed.

  The gas supply means 9 supplies gas between the electrode 7 and the drum 4. The gas supply means 9 includes a gas cylinder (gas supply source) 91 that is charged and supplied with a predetermined gas, a regulator (flow rate adjustment means) 92 that adjusts the flow rate of the gas supplied from the gas cylinder 91, and a gas cylinder at the upstream end side. 91 and a supply pipe 95 connected to the gas inlet 51 of the chamber 5 on the downstream end side. The regulator 92 is disposed on the downstream end side from the gas cylinder 91. Further, on the downstream end side of the supply pipe 95 from the regulator 92, a valve (flow path opening / closing means) 96 for opening and closing the flow path in the supply pipe 95 is provided.

  After a predetermined gas is sent out from the gas cylinder 91 and the flow rate is adjusted by the regulator 92, the gas passes through the supply pipe 95 with the valve 96 opened, flows to the downstream end side of the supply pipe 95, and introduces the gas. It passes through the mouth 51 and is introduced (supplied) into the chamber 5.

Various gases can be used for the plasma treatment (treatment gas) depending on the purpose of treatment. Hereinafter, examples of gases used for different purposes will be given.
(A) For the purpose of heating the surface 1001 to be processed of the workpiece 100, for example, N ₂ , O ₂ or the like is used.
(B) For the purpose of making the treated surface 1001 of the workpiece 100 water repellent (liquid repellent), for example, fluorine atoms such as CF ₄ , C ₂ F ₆ , C ₃ F ₆ , CClF ₃ , and SF ₆ A contained compound gas is used.

(C) When the surface 1001 of the workpiece 100 is to be made hydrophilic (lyophilic), for example, O ₃ , H ₂ O, oxygen atom-containing compounds such as air, nitrogen such as N ₂ and NH _3, etc. Atom-containing compounds, sulfur atom-containing compounds such as SO ₂ and SO ₃ are used. As a result, a hydrophilic functional group such as a carbonyl group, a hydroxyl group, and an amino group can be formed on the surface 1001 of the workpiece 100 to increase the surface energy, thereby obtaining a hydrophilic surface. Alternatively, a hydrophilic polymer film can be deposited (formed) using a polymerizable monomer having a hydrophilic group such as acrylic acid or methacrylic acid.
(D) When it is intended to add an electrical or optical function to the surface 1001 to be processed of the workpiece 100, a metal oxide thin film such as SiO ₂ , TiO ₂ or SnO ₂ is applied to the surface 1001 to be processed of the workpiece 100. In order to form them, metal metal-hydrogen compounds such as Si, Ti, Sn, metal-halogen compounds, metal alkoxides (organometallic compounds) and the like are used.
(E) For the purpose of etching treatment or dicing treatment, for example, a halogen-based gas is used. For the purpose of resist treatment or removal of organic contamination, for example, an oxygen-based gas is used.

Note that, as a gas supplied to the plasma generation region 20, a mixed gas (hereinafter, also simply referred to as “gas”) composed of a processing gas and a carrier gas (for example, He) is generally used. “Carrier gas” refers to a gas introduced to start discharge and maintain discharge.
In this case, the gas cylinder 91 may be filled with a mixed gas (processing gas + carrier gas), or the processing gas and the carrier gas may be filled in different gas cylinders, and these may be in the middle of the supply pipe 95. A configuration in which mixing is performed at a predetermined mixing ratio may be employed.

In addition to He (helium), for example, a rare gas such as Ne, Ar, or Xe can be used as the carrier gas, and these can be used alone or in a mixed form of two or more.
The ratio (mixing ratio) of the processing gas in the mixed gas is slightly different depending on the purpose of the processing and is not particularly limited. For example, the ratio of the processing gas in the mixed gas is preferably 1 to 10%. More preferably, it is 5 to 10%.
The flow rate of the gas to be supplied is appropriately determined according to the type of gas, the purpose of the treatment, the degree of treatment, etc., and is not particularly limited, but it is usually preferably about 30 SCCM to 50 SLM.

  When a predetermined gas is supplied from the gas supply means 9 to the drum housing space 55 of the chamber 5 and a predetermined voltage, for example, a high frequency voltage (voltage) is applied between the electrode 7 and the drum 4, An electric field is generated between the portion corresponding to the electrode 7 on the side wall and the drum 4, and discharge, that is, glow discharge (barrier discharge) occurs. The gas supplied by this discharge is activated (ionization, ionization, excitation, etc.), and plasma is generated. The surface 1001 to be processed of the workpiece 100 wound around the drum 4 is plasma-processed by the generated plasma.

The gas discharge means 10 discharges the plasma generated in the plasma generation region, reaction products, and inactive gas from the gas discharge port 52.
The gas discharge means 10 includes a pump 101 and a discharge pipe 102 having one end connected to the pump 101 and the other end connected to the gas discharge port 52 of the chamber 5. A valve (flow channel opening / closing means) 103 that opens and closes the flow path in the discharge pipe 102 is provided in the middle of the discharge pipe 102.

  When the valve 103 is opened with the pump 101 in an operating state, the gas in the chamber 5 passes through the gas discharge port 52 and flows out to the gas discharge pipe 102, and a gas recovery tank provided on the downstream area side of the pump 101. Collected in 104. And the gas collect | recovered by this gas collection | recovery tank 104 can be used again as a gas used for a plasma process by performing a predetermined process.

  Further, when the pump 101 is operated, the chamber 5, the gas discharge port 52, the discharge pipe 102, and the like are temporarily decompressed. Then, the gas introduced into the chamber 5 passes through the gas discharge port 52 and is recovered in the gas recovery tank 104 of the pump 101. Thereby, it is possible to suppress gas from leaking from the work introduction port 58 and the work discharge port 59 of the chamber 5, and to discharge more gas supplied from the gas introduction port 51 from the gas discharge port 52.

  Although it does not specifically limit as the workpiece | work 100, In this embodiment, what is used as a board | substrate of an electronic device is mentioned, for example. Specific materials include, for example, various glasses such as quartz glass and alkali-free glass, various ceramics such as alumina, silica, and titania, various semiconductor materials such as silicon and gallium-arsenic, polyethylene, polypropylene, polystyrene, polycarbonate, and polyethylene. Examples thereof include those made of dielectric materials such as various plastics (resin materials) such as terephthalate, polytetrafluoroethylene, polyimide, liquid crystal polymer, phenol resin, epoxy resin, and acrylic resin. However, since the workpiece 100 is wound around the reels 2 and 3 and the drum 4, it is preferable that the workpiece 100 has flexibility. Therefore, in the case of glass or semiconductor material, it is preferable to use a relatively thin one.

Examples of the shape of the workpiece 100 include a long layer shape and a long film shape.
Further, the shape of the edge of the workpiece 100 is not limited to a linear shape, and may be a wave shape, a comb shape, or the like.
Although the thickness of the workpiece | work 100 is not specifically limited, Usually, it is preferable that it is about 0.2 mm-1 mm, and it is more preferable that it is about 0.5-0.7 mm. Within such a range, the strength is high, and there is no risk of breakage during traveling, and it is easy to wind around a reel or drum.

The length of the workpiece 100 in the longitudinal direction is not particularly limited because it can correspond to the workpiece 100 of any length in the present invention, but is preferably about 10 m to 40 m.
The length (width) in the short direction of the work may be smaller than the height of the drum 4, and is preferably about 3 to 15 cm, and more preferably 5 to 10 cm. Within this range, the drum 4 can be wound and the entire surface 1001 of the workpiece 100 can be plasma-treated.

The treated surface 1001 of the workpiece 100 may be any surface of the workpiece 100, or may be both surfaces.
In addition, since the workpiece 100 is plasma-treated and then wound around the workpiece take-up reel 3, the surface to be processed 1001 of the workpiece 100 comes into contact with the back surface of the surface. Therefore, a predetermined protective layer or the like is formed in advance in order to protect the back surface of the processing surface 1001 so that the processing surface 1001 of the workpiece 100 subjected to the plasma processing does not have an adverse effect due to contact with the back surface. Also good.

(2) Operation Method of Plasma Device Next, the operation (operation) of the plasma device 1 will be described.
When the processing surface 1001 of the workpiece 100 wound around the workpiece feeding reel 2 is subjected to the plasma treatment, the workpiece 100 is fed out from the workpiece feeding reel 2 and wound around the outer peripheral surface of the drum 4 in a spiral manner. The attached end is attached to the workpiece take-up reel 3.

Then, the high frequency power supply 8 and the pump 101 are operated, the valves 96 and 103 are opened, the gas flow rate is adjusted by the regulator 92, and the gas is sent out from the gas cylinder 91.
Thereby, the gas sent out from the gas cylinder 91 flows through the supply pipe 95 and is supplied from the gas inlet 51 of the chamber 5 to the first space 56 of the chamber 5 at a predetermined flow rate. The gas supplied to the first space 56 passes through the gas circulation port 532 and is supplied to the drum housing space 55, particularly the space between the outer peripheral surface of the drum 4 and the peripheral surface without the chamber 5. .

On the other hand, by the operation of the high frequency power supply 8, a high frequency voltage is applied between the electrode 7 and the drum 4, and an electric field is generated between the portion corresponding to the electrode 7 on the side wall of the chamber 5 and the drum 4.
The gas that has flowed into the drum housing space 55 is activated by the discharge to generate plasma, and the plasma generation region 20 is generated.
At the same time, the rotation driving mechanism is operated to rotate the workpiece feeding reel 2 and the workpiece winding reel 3. As a result, the work 100 wound around the work delivery reel 2 is sent out, passes through the work introduction port 58 of the chamber 5, is introduced into the drum housing space 55, and runs spirally along the outer peripheral surface of the drum 4. To do. At this time, the drum 4 also rotates. When the workpiece 100 enters the plasma generation region 20, the generated plasma (activated gas) comes into contact with the processing surface 1001 of the workpiece 100, and the processing surface 1001 is processed. Then, the workpiece 100 that has passed through the plasma generation region 20 and has reached the upper end side of the drum 4 is separated from the drum 4 and discharged from the workpiece discharge port 59, and is wound around the workpiece winding reel 3.

  In such a plasma apparatus 1, the processing time of the workpiece 100 using plasma corresponds to the traveling time during which the workpiece 100 travels through the plasma generation region 20. The travel time is determined by the winding length of the workpiece 100 in the plasma generation region 20 (the length wound around the drum 4) and the traveling speed of the workpiece 100. Among these, the winding length of the workpiece 100 in the plasma generation region 20 is controlled by the size (height) of the plasma generation region 20 controlled by the height of the electrode 7 and the number of windings of the workpiece 100 around the drum 4. can do.

Therefore, for example, even when it is necessary to increase the processing time as in the case of processing the workpiece 100 with a low processing rate, the apparatus is not enlarged and the traveling speed of the workpiece is not reduced. Further, by increasing the height of the electrode and increasing the number of windings of the workpiece 100 around the drum 4, the processing time of the workpiece 100 by plasma can be extended. Therefore, even the workpiece 100 having a low processing rate can be subjected to plasma processing. As a result, it is possible to provide a space-saving plasma device 1 that can suppress gas consumption.
The plasma apparatus described above is preferably used in all device manufacturing processes using FPC, such as an FPC manufacturing process, an FPC-using device manufacturing process, and an IC tag manufacturing process.

Second Embodiment
The second embodiment of the plasma apparatus 1 of the present invention will be described with a focus on differences from the first embodiment, and the description of the same matters will be omitted.
FIG. 4 is a cross-sectional view schematically showing chambers, drums and electrodes provided in the plasma apparatus of the present invention.
The plasma apparatus 1 shown in FIG. 4 is the same as the plasma apparatus 1 of the first embodiment except for the structure of the electrode 7 and the plasma apparatus 1 of the first embodiment.

That is, the present embodiment is different in that the electrode 7 is not formed over the entire circumference of the drum 4 and includes a plurality of electrodes 7.
Each of the electrodes 7 has a curved plate-like shape (a straw shape). The electrodes 7 are arranged at equiangular intervals along the outer periphery of the chamber 5. By arranging in this way, the distribution of the generated plasma in the circumferential direction can be made uniform. In the present embodiment, four plate-like electrodes 7 are arranged at equiangular intervals. By doing in this way, the length of the workpiece | work 100 which exists between the electrode 7 and the drum 4 becomes large, and the workpiece | work 100 with a long length can be plasma-processed at once. In addition, the apparatus can be configured with less material than in the first embodiment, and the apparatus can be reduced in size and weight.
The size of each electrode 7, that is, the size of each plate piece can be represented by an occupation ratio with respect to the outer periphery of the chamber 5. Specifically, the occupation ratio is preferably 1/64 to 1/4 with respect to the outer periphery (100%) of the chamber 5. Thereby, plasma processing can be efficiently performed with a small amount of material.

<Third Embodiment>
The third embodiment of the plasma apparatus 1 of the present invention will be described with a focus on differences from the first embodiment, and the description of the same matters will be omitted.
FIG. 5 is a cross-sectional view schematically showing chambers, drums and electrodes provided in the plasma apparatus of the present invention.
The plasma apparatus 1 shown in FIG. 5 is the same as the plasma apparatus 1 of the first embodiment except for the number and size of the electrodes 7 and the plasma apparatus 1 of the first embodiment.

That is, the present embodiment is different in that the electrode 7 is not formed over the entire circumference of the drum 4 and includes one electrode 7.
The electrode 7 is disposed at any position along the outer periphery of the chamber 5. Thus, since plasma is generated between the opposing drums 4, if the drum 4 is rotated, the length of the workpiece 100 in the plasma generation region 20 becomes larger than the conventional one, and the workpiece 100 having a long length is once set. Can be plasma treated.

  The size of the electrode 7, that is, the size of the plate piece can be represented by an occupation ratio with respect to the outer periphery (100%) of the chamber 5. Specifically, the occupation ratio is preferably smaller than the outer circumference of the chamber 5 and larger than the occupation ratio of 1/64 with respect to the outer circumference of the chamber 5. As a result, plasma is generated between the opposing drums 4. Therefore, if the drum 4 around which the workpiece 100 is wound is rotated, the plasma treatment of the workpiece 100 having a longer length can be performed in a shorter time than the conventional plasma apparatus. can do. As a result, gas consumption can also be reduced. In addition, plasma treatment can be efficiently performed with a small amount of material.

<Fourth embodiment>
The fourth embodiment of the plasma apparatus 1 of the present invention will be described with a focus on differences from the first to third embodiments, and the description of the same matters will be omitted.
FIG. 6 is a schematic view showing an embodiment of the plasma apparatus of the present invention.
In the following description, the upper side in FIGS. 1 and 2 is referred to as “upper” and the lower side is referred to as “lower”.
The plasma apparatus 1 of the present embodiment is different from the first to third embodiments in that it has heating means, and other than that is the same as the plasma apparatus 1 of the first to third embodiments.

That is, in the present embodiment, the gas supply pipe 95 is provided with a heating means for the heater 30.
The heater 30 heats the gas before supplying the gas to the chamber 5. The heater 30 is disposed above the gas introduction port 51 of the chamber 5 (on the gas cylinder 91 side) and below the valve 96 (on the chamber 5 side).
40-250 degreeC is preferable and the heating temperature of gas has more preferable 50-200. Thereby, heat energy is added to the gas, the ignitability of the plasma is improved, and the plasma can be easily generated even with the low frequency, low output power source 8. Further, the plasma processing rate is improved, and it is particularly preferably used for the workpiece 100 having a low plasma processing rate.

<Other embodiments>
In the plasma apparatus 1 described above, the drum 4 also functions as a counter electrode. However, a counter electrode may be provided separately from the drum 4. In this case, the constituent material of the drum 4 is not limited to the conductive material, and various materials can be used.
Further, the voltage applied between the electrode 7 and the drum 4 (counter electrode) is not limited to a high frequency, and may be a pulse wave or a microwave, for example.

In the above embodiment, the workpiece 100 is spirally wound around the drum 4. However, the workpiece 100 may be wound around the drum 4 in parallel with the first and second wall portions 53 and 54 (ring shape). . In this case, the workpiece 100 having a length corresponding to the outer periphery of the drum 4 can be plasma-processed.
In the above-described embodiment, the workpiece feeding reel 2 and the workpiece winding reel 3 are also provided.
However, instead of arranging them, the workpiece 100 may be wound around the drum 4 and subjected to plasma treatment, and then the chamber 100 may be opened to take out the processed workpiece 100. Thereby, it can respond also to a batch type plasma processing.

  In the above embodiment, the workpiece 100 is rotated 90 degrees before being introduced into the chamber 5 and then rotated 90 degrees after being discharged from the chamber 5. However, the workpiece fed from the workpiece feeding reel 2 is transferred to the chamber 5. After being introduced into the workpiece introduction port 58, it may be rotated 90 degrees and wound around the drum 4. Further, it may be rotated 90 degrees before being discharged from the work discharge port 59 of the chamber 5 away from the drum 4 and discharged. As a result, the workpiece 100 can be fed and wound efficiently by the workpiece feeding reel 2 and the workpiece winding reel 3.

  Moreover, in the said embodiment, although the rotating rolls 21 and 31 were provided orthogonally to the rotating shafts 41 and 42 of the drum 4, they may be provided in parallel. Thereby, when the work 100 is introduced into the chamber 5, the rotation of 90 degrees when the work 100 is discharged from the chamber 5 can be omitted, and the work 100 can be sent out and taken up, introduced into the chamber 5, and the drum 4. Can be wound and discharged from the chamber 5. Further, it is possible to prevent a plasma unprocessed portion due to kinking of the workpiece 100 and damage of the plasma processing portion during winding of the workpiece.

In the above embodiment, the gas supply pipe 95 includes the heater 30, but the heater 30 that heats the entire chamber 5 may be attached. Thereby, the ignitability of plasma improves and it can generate plasma easily.
The heater 30 may be attached to the gas cylinder 91 itself. Thereby, it is possible to easily generate plasma and contribute to miniaturization of the plasma apparatus itself.

The plasma apparatus of the present invention has been described based on the illustrated embodiments. However, the present invention is not limited to these embodiments, and the configuration of each part is replaced with an arbitrary configuration having the same function. can do. Moreover, other arbitrary structures and processes may be added.
In the above embodiment, it is assumed that the plasma apparatus performs plasma processing on the surface of the workpiece under atmospheric pressure. However, in the present invention, the plasma processing is performed on the surface of the workpiece in a reduced pressure or vacuum state. Also good.

It is a schematic diagram which shows embodiment of the plasma apparatus of this invention. It is a longitudinal cross-sectional view which shows typically the chamber, drum, and electrode with which the plasma apparatus shown in FIG. 1 is provided. It is a cross-sectional view which shows typically the chamber, drum, and electrode with which the plasma apparatus shown in FIG. 1 is provided. It is a cross-sectional view which shows typically the chamber, drum, and electrode with which the plasma apparatus shown in FIG. 1 is provided. It is a cross-sectional view which shows typically the chamber, drum, and electrode with which the plasma apparatus shown in FIG. 1 is provided. It is a schematic diagram which shows embodiment of the plasma apparatus of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Plasma apparatus 2 ... Work delivery reel 21 ... Rotary roll 22 ... Flange part 3 ... Work take-up reel 31 ... Rotary roll 32 ... Flange part 4 ... Drum 41, 42 ... Rotation Shaft 43 ... Roll 44 ... Work positioning means 5 ... Chamber 51 ... Gas inlet 52 ... Gas outlet 53 ... First wall 531 ... Bearing 532 ... Gas flow port 54 ... Second Wall portion 541 …… bearing 542 …… gas flow port 55 …… drum housing space 56 …… first space 57 …… second space 58 …… work introduction port 59 …… work discharge port 6 …… dielectric Member 61 ... Recess 7 ... Electrode 8 ... High frequency power supply 9 ... Gas supply means 91 ... Gas cylinder 92 ... Regulator 95 ... Supply pipe 96 ... Valve 10 ... Gas exhaust Extraction means 101 …… Pump 102 …… Discharge pipe 103 …… Valve 104 …… Gas recovery tank 20 …… Plasma generation area 30 …… Heater 100 …… Workpiece 1001 …… Surface to be treated

Claims (15)

A plasma apparatus for processing a surface to be processed of the workpiece with plasma while running a long workpiece in the longitudinal direction,
A drum on which the workpiece surface of the workpiece is disposed on the outer peripheral side and the workpiece is wound thereon;
An electrode provided facing the outer peripheral surface of the drum;
A power source for applying a voltage between the electrode and the drum;
Gas supply means for supplying gas between the electrode and the drum;
While supplying gas between the electrode and the drum, by applying a voltage between the electrode and the drum, the gas is activated to generate plasma, and the plasma is wound around the drum. A plasma apparatus characterized in that a surface to be processed of a workpiece is processed.   The plasma apparatus according to claim 1, wherein the work wound around the drum is wound spirally.   The plasma apparatus according to claim 1, wherein the drum has positioning means for determining a position of the wound workpiece with respect to the drum on an outer peripheral surface thereof.   The plasma apparatus according to claim 3, wherein the positioning means is a groove or a protrusion provided on an outer peripheral surface of the drum.   The plasma device according to claim 1, wherein the electrode is provided along a circumferential direction of the drum.   The plasma apparatus according to claim 1, wherein the electrode is disposed over the entire circumference of the drum.   The plasma apparatus according to claim 1, further comprising a dielectric member between the electrode and the drum.   The said drum is accommodated, It has a chamber provided with the gas inlet provided in the one end side of the said drum, and the gas discharge port provided in the other end side of the said drum. Plasma device.   The plasma apparatus according to claim 8, wherein the chamber is in contact with the electrode through the dielectric member on an outer peripheral surface thereof.   The plasma apparatus according to claim 8 or 9, wherein the chamber has a work introduction port through which the work is introduced into the chamber, and a work discharge port through which the work is discharged from the chamber. Workpiece delivery means for delivering the workpiece;
The plasma apparatus according to claim 1, further comprising: a work winding unit that winds the work that is fed from the work feeding unit and wound around the drum.   The plasma apparatus according to claim 11, wherein a workpiece winding speed of the workpiece winding means is higher than a workpiece feeding speed of the workpiece feeding means.   The plasma apparatus according to claim 11 or 12, wherein the workpiece winding means is disposed on the gas inlet side of the chamber, and the workpiece delivery means is disposed on the gas outlet side of the chamber.   A gas discharge means for discharging the gas supplied from the gas introduction port is provided at the gas discharge port of the chamber, and the gas is discharged from the gas discharge port by decompressing the inside of the chamber by the gas discharge means. Item 14. The plasma device according to any one of Items 1 to 13.   The plasma apparatus according to claim 1, further comprising a heating unit configured to heat the gas before supplying the gas between the electrode and the drum.

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